AUIRFS4310
Power MOSFET, N Channel, 100 V, 130 A, 0.0056 ohm, TO-263 (D2PAK), Surface Mount
- Manufacturer: INFINEON
- Product type: Single MOSFETs
- No. of Pins: 3Pins
- Channel Type: N Channel
- Qualification: AEC-Q101
- Power Dissipation: 300W
- Transistor Mounting: Surface Mount
- Transistor Polarity: N Channel
- Power Dissipation Pd: 300W
- Rds(on) Test Voltage: 10V
- On Resistance Rds(on): 0.0056ohm
- Transistor Case Style: TO-263 (D2PAK)
- Drain Source Voltage Vds: 100V
- Operating Temperature Max: 175°C
- Continuous Drain Current Id: 130A
- Drain Source On State Resistance: 0.0056ohm
- Automotive Qualification Standard: AEC-Q101
- Gate Source Threshold Voltage Max: 2V
| Delivery and price | |
|---|---|
| Units per pack | 1 |
| Price | 4.91 € |
| Current stock | 10+ |
| Lead time | 30 days |
|<br>**AUTOMOTIVE GRADE**<br>~~Cinfineon~~|<br>**AUTOMOTIVE GRADE**<br>~~Cinfineon~~||AUIRFS4310<br>AUIRFSL4310<br>~~pO~~| |---|---|---|---| ||||HEXFET®Power MOSFET| |**Features**<br>Advanced Process Technology<br>Ultra Low On-Resistance<br>175°C Operating Temperature<br>Fast Switching<br>Repetitive Avalanche Allowed up to Tjmax<br>Lead-Free, RoHS Compliant<br>Automotive Qualified *<br>**Description**<br>Specifically designed for Automotive applications, this HEXFET®<br>Power MOSFET utilizes the latest processing techniques to achieve<br>extremely low on-resistance per silicon area. Additional features of<br>this design are a 175°C junction operating temperature, fast<br>switching speed and improved repetitive avalanche rating . These<br>features combine to make this design an extremely efficient and|||**VDSS**<br>**100V**<br>**RDS(on) typ.**<br>**5.6m**<br>**max.**<br>**7.0m**<br>**ID (Silicon Limited)**<br>**130A**<br>**ID (Package Limited)**<br>**75A**<br>D2Pak<br>AUIRFS4310<br>TO-262<br>AUIRFSL4310<br>S<br>D<br>G<br>S<br>D<br>GD<br>~~==~~| |reliable device for use in Automotive applications and a wide variety|||**G**<br>**D**<br>**S**| |of other applications|||Gate<br>Drain<br>Source| |**Base part number**<br>**Package Type**<br>**Standard Pack**<br>**Form**<br>**Quantity**<br>AUIRFSL4310<br>TO-262<br>Tube<br>50<br>AUIRFSL4310<br>AUIRFS4310<br>D2-Pak<br>Tube<br>50<br>AUIRFS4310<br>Tape and Reel Left<br>800<br>AUIRFS4310TRL<br>**Orderable Part Number**<br>~~a————~~|||| |**Absolute Maximum Ratings**|||| |Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress|||| |ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not|||ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not| |implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance|||| |and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless|||| |otherwise specified.|||| |**Symbol**|**Parameter**|**Max.**|**Units**| |---|---|---|---| |ID@ TC= 25°C|Continuous Drain Current, VGS@ 10V (Silicon Limited)|130|A| |ID @TC= 100°C|Continuous Drain Current,VGS @10V(Silicon Limited)|92|| |ID@ TC= 25°C|Continuous Drain Current, VGS@ 10V (Package Limited)|75|| |IDM|Pulsed Drain Current|550|| |PD@TC= 25°C|Maximum Power Dissipation|300|W| ||Linear Derating Factor|2.0|W/°C| |VGS<br>~~————~~|Gate-to-SourceVoltage<br>~~————~~|± 20<br>~~————~~|V<br>~~————~~| |EAS<br>~~————~~|Single Pulse Avalanche Energy (ThermallyLimited) <br>~~————~~|980<br>~~————~~|mJ<br>~~————~~| |IAR<br>~~————~~|Avalanche Current<br>~~————~~|See Fig.14,15, 22a, 22b<br>~~————~~<br>~~en~~|A<br>~~————~~| |EAR<br>~~————~~|Repetitive Avalanche Energy <br>~~————~~||mJ<br>~~————~~| |dv/dt<br>~~————~~|Peak Diode Recovery <br>~~————~~|14<br>~~————~~<br>~~en~~|V/ns<br>~~————~~| |TJ<br>TSTG<br>~~a~~|Operating Junction and<br>Storage Temperature Range<br>~~a~~|-55 to + 175<br>~~a~~<br>~~en~~|°C<br>~~a~~| |~~a~~|SolderingTemperature,for 10 seconds(1.6mm from case)<br>~~a~~|300<br>~~a~~<br>~~en~~|| ~~Cinfineon~~ AUIRFS/SL4310 ~~LLL~~ |~~ae~~||||||| |---|---|---|---|---|---|---| |Qg<br>~~ae~~<br>~~ee~~|Total Gate Charge<br>~~es~~|–––<br>~~es~~|170<br>~~es~~|250<br>~~es~~|nC|ID= 75A<br>VDS= 80V<br>VGS= 10V| |g<br>Qgs<br>~~ae~~<br>~~ee~~|Gate-to-Source Charge<br>~~es~~|–––<br>~~es~~|46<br>~~es~~|–––<br>~~es~~||| |gs<br>Qgd<br>~~ee~~<br>~~ee~~<br>~~ee~~|Gate-to-Drain Charge<br>~~es~~<br>~~ee~~<br>~~es~~|–––<br>~~es~~<br>~~ee~~<br>~~es~~|62<br>~~es~~<br>~~ee~~<br>~~es~~|–––<br>~~es~~<br>~~ee~~<br>~~es~~||| |gd<br>td(on)<br>~~ee~~<br>~~ee~~<br>~~es~~|Turn-On DelayTime<br>~~ee~~<br>~~es~~<br>~~es~~|–––<br>~~ee~~<br>~~es~~<br>~~es~~|26<br>~~ee~~<br>~~es~~<br>~~es~~|–––<br>~~ee~~<br>~~es~~<br>~~es~~|ns|VDD= 65V<br>ID= 75A<br>RG= 2.6<br>VGS= 10V| |d(on)<br>tr<br>~~ee~~<br>~~es~~<br>~~es~~|RiseTime<br>~~es~~<br>~~es~~<br>~~es~~|–––<br>~~es~~<br>~~es~~<br>~~es~~|110<br>~~es~~<br>~~es~~<br>~~es~~|–––<br>~~es~~<br>~~es~~<br>~~es~~||| |td(off)<br>~~es~~<br>~~es~~<br>~~es~~<br>~~es~~|Turn-Off DelayTime<br>~~es~~<br>~~es~~<br>~~ee~~<br>|–––<br>~~es~~<br>~~es~~<br>~~ee~~<br>~~ss~~<br>|68<br>~~es~~<br>~~es~~<br>~~ee~~<br>~~ss~~<br>|–––<br>~~es~~<br>~~es~~<br>~~ee~~<br>||| |d(off)<br>tf<br>~~es~~<br>~~es~~<br>~~es~~|Fall Time<br>~~es~~<br>~~ee~~<br>|–––<br>~~es~~<br>~~ee~~<br>~~ss~~<br>|78<br>~~es~~<br>~~ee~~<br>~~ss~~<br>|–––<br>~~es~~<br>~~ee~~<br>||| |Ciss<br>~~es~~<br>~~es~~<br>~~es~~<br>~~es~~|Input Capacitance<br>~~ee~~<br>~~**e**e~~|–––<br>~~ee~~<br>~~ss~~<br>~~e~~<br>~~Os~~|7670<br>~~ee~~<br>~~ss~~<br>~~e~~|–––<br>~~ee~~<br>~~e~~|pF<br>~~res~~|VGS= 0V<br>VDS= 50V<br>ƒ= 1.0MHz, See Fig. 5| |Coss<br>~~es~~<br>~~es~~<br>~~es~~|Output Capacitance<br>~~**e**e~~<br>~~n~~|–––<br>~~ss~~<br>~~e~~<br>~~n~~<br>~~Os~~|540<br>~~ss~~<br>~~e~~<br>~~n~~|–––<br>~~e~~<br>~~n~~||| |Crss<br><br>~~es~~<br>~~es~~<br>~~es~~|Reverse Transfer Capacitance<br>~~**e**e~~<br>~~n~~|–––<br>~~e~~<br>~~n~~<br>~~Os~~|280<br>~~e~~<br>~~n~~|–––<br>~~e~~<br>~~n~~||| |Coss eff.(ER)<br>~~es~~<br>~~es~~<br>~~ee~~|Effective Output Capacitance (Energy Related)<br>~~rs~~|–––<br>~~Os~~<br>~~rs~~<br>~~rr~~|650<br>~~rs~~<br>~~ts~~|–––<br>~~rs~~<br>~~r~~||VGS= 0V, VDS= 0V to 80V| |Coss eff.(TR)<br>~~es~~<br>~~ee~~|Effective Output Capacitance(Time Related)<br>~~rs~~|––– 720.1 –––<br>~~rs~~<br>~~rr~~|––– 720.1 –––<br>~~rs~~<br>~~ts~~|––– 720.1 –––<br>~~rs~~<br>~~r~~||VGS= 0V,VDS= 0V to 80V| |**Diode Characteristics**<br>~~eers~~<br>~~rr ts~~<br>~~res~~<br>~~esrs~~<br>~~SssD~~||||||| |~~es~~|**Parameter **<br>~~rs~~|**Min.**<br>~~rs~~<br>~~Ss~~|**Typ. M**<br>~~rs~~<br>~~Ss~~|**. Max.**<br>~~rs~~<br>~~sD~~|**Units**<br>~~rs~~<br>~~sD~~|**Conditions**<br>~~rs~~| |IS<br>~~es~~<br>~~rf~~|Continuous Source Current<br>(BodyDiode)<br>~~rs~~<br>~~rf~~|–––<br>~~rs~~<br>~~Ss~~<br>~~rf~~|––– 130<br>~~rs~~<br>~~Ss ~~<br>~~rf~~|––– 130<br>~~rs~~<br> ~~sD~~<br>~~rf~~|A<br>~~rs~~<br>~~sD~~<br>~~rf~~<br>~~ss~~|MOSFET symbol<br>showing the<br>integral reverse<br>p-n junction diode.<br>~~rs~~<br>~~rf~~| |ISM<br>~~rf~~<br>~~es~~|Pulsed Source Current<br>(Body Diode)<br>~~rf~~<br>~~rs~~|–––<br>~~rf~~<br>~~rs~~|–––<br>~~rf~~<br>~~rd~~|550<br>~~rf~~<br>~~ss~~||| |VSD<br>~~es~~|Diode Forward Voltage<br>~~rs~~<br>~~|~~|–––<br>~~rs~~<br>~~|~~|–––<br>~~rd~~<br>~~eee~~<br>|1.3<br>~~ss~~<br>~~ee~~<br>|V<br>~~ss~~<br>~~ee~~|TJ= 25°C,IS= 75A,VGS= 0V| |trr<br>~~es~~<br>~~a es~~|Reverse Recovery Time<br>~~rs ~~<br>~~es~~<br>~~|~~|–––<br> ~~rs ~~<br>~~es~~<br>~~|~~|45<br> ~~rd ~~<br>~~es~~<br>~~eee~~<br>|68<br> ~~ss~~<br>~~es~~<br>~~ee~~<br>|ns<br>~~ss~~<br>~~es~~<br>~~ee~~|TJ =25°CVDD= 85V<br>TJ =125°CIF= 75A,<br>TJ =25°Cdi/dt = 100A/µs<br>TJ =125°C <br>TJ= 25°C<br>| |||–––<br>~~es~~<br>~~|tT~~|55<br>~~es~~<br>~~eee~~<br>~~tT~~|83<br>~~es~~<br>~~ee~~<br>~~tT~~||| |Qrr<br>~~a es~~<br>~~a ee~~<br>~~ee~~|Reverse Recovery Charge<br>~~es~~<br>~~|~~<br>~~ee~~<br>~~|~~<br>|–––<br>~~es~~<br>~~|tT~~<br>~~ee~~|82<br>~~es~~<br>~~eee ~~<br>~~tT~~<br>~~ee~~|120<br>~~es~~<br> ~~ee~~<br>~~tT~~<br>~~ee~~|nC<br>~~es~~<br>~~ee~~<br>~~ee~~<br>|| |||–––<br>~~ee~~<br>~~|TT~~<br>|120<br>~~ee~~<br>~~TT~~<br>|180<br>~~ee~~<br>~~TT~~<br>||| |IRRM<br>~~a ee~~<br>~~ee~~<br>~~ee~~|ReverseRecovery Current<br>~~ee~~<br>~~|~~<br>~~es~~<br>|–––<br>~~ee~~<br>~~|TT~~<br>~~es~~<br>~~es~~<br>|3.3<br>~~ee~~<br>~~TT~~<br>~~es~~<br>~~es~~<br>|–––<br>~~ee~~<br>~~TT~~<br>~~es~~<br>|A<br>~~ee~~<br>~~es~~<br>|| |ton<br>~~ee~~<br>~~ee~~|Forward Turn-On Time<br><br><br>~~es~~|Intrinsic turn-on time is negligible(turn-on is dominated byLS+LD)<br>~~TT~~<br><br>~~es~~<br>~~es~~||||| **Notes:** > Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 75A. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. > Repetitive rating; pulse width limited by max. junction temperature. - Limited by TJmax, starting TJ = 25°C, L = 0.35mH, RG = 25, IAS = 75A, VGS =10V. Part not recommended for use above this value. > ISD 75A, di/dt 550A/µs, VDD V(BR)DSS, TJ 175°C. - Pulse width 400µs; duty cycle 2%. - Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. - Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS. - When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994 - R is measured at TJ approximately 90°C. 2 2015-10-27 AUIRFS/SL4310 ~~a~~ ## ~~Cafineon~~ **==> picture [507 x 431] intentionally omitted <==** **----- Start of picture text -----**<br> 1000 1000<br>VGS VGS<br>TOP 15V TOP 15V<br>10V 10V<br>8.0V 8.0V<br>6.0V 6.0V<br>5.5V 5.5V<br>5.0V Mil 5.0V HI<br>100 4.8V MIL 4.8V fh<br>BOTTOM 4.5V BOTTOM 4.5V<br>100<br>fia fi<br>10<br>Zara at Pe<br>eT fy 4.5V TLL<br> 60µs PULSE WIDTH 60µs PULSE WIDTH<br>4.5V Tj = 25°C Tj = 175°C<br>1 cen 10 Li<br>0.1 1 10 100 0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)<br>Fig. 1 Typical Output Characteristics Fig. 2 Typical Output Characteristics<br>3.0<br>1000<br>ID = 75A<br>VGS = 10V<br>2.5<br>100 PT TTT<br>2.0<br>T = 175°C<br>J<br>1.5<br>10 if T = 25°C = BERORREEEDZALTA<br>J<br>1.0<br>! V DS = 50V HAL<br> 60µs PULSE WIDTH<br>0.5<br>1<br>‘L! -60 TTT -40 -20 0 20 40 60 80 100 120 140 160 180<br>3.0 4.0 5.0 6.0 7.0 8.0<br>TJ , Junction Temperature (°C)<br>VGS, Gate-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A)<br>)<br>ID, Drain-to-Source Current<br>RDS(on) , Drain-to-Source On Resistance (Normalized)<br>**----- End of picture text -----**<br> **Fig. 4** Normalized On-Resistance vs. Temperature **Fig. 3** Typical Transfer Characteristics **==> picture [510 x 212] intentionally omitted <==** **----- Start of picture text -----**<br> 12000 20<br>VGS = 0V, f = 1 MHZ ID= 75A<br>Ciss = Cgs + Cgd, Cds SHORTED<br>10000 Crss = Cgd VDS= 80V<br>Coss = Cds + Cgd 16 VDS= 50V<br>T VDS= 20V<br>8000 Ciss<br>Ll<br>Ss [SS] | ] 12 Ae<br>6000<br>Coit A<br>8<br>4000<br>CT CT 5-2 Anne<br>4<br>2000<br>RTI Coss CT an<br>Crss<br>Or Tl JT LE EEL<br>0 0<br>1 10 100 0 40 80 120 160 200 240 280<br>VDS, Drain-to-Source Voltage (V) QG Total Gate Charge (nC)<br>C, Capacitance (pF)<br>VGS, Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br> **Fig 5.** Typical Capacitance vs. Drain-to-Source Voltage **Fig 6.** Typical Gate Charge vs. Gate-to-Source Voltage 3 2015-10-27 ## ~~Cinfin eon~~ **==> picture [525 x 484] intentionally omitted <==** **----- Start of picture text -----**<br> AUIRFS/SL4310<br>eon LLL<br>1000.0 10000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br>100.0 TJ = 175°C Faun 1000 SeonHit<br>100<br>100µsec<br>10.0<br>EV ¢4Gneee SN<br>10<br>TJ = 25°C<br>1.0 raiiSGEEEE Ag<br>1 Tc = 25°C 1msec<br>Tj = 175°C 10msec<br>VGS = 0V Single Pulse DC<br>0.1 mitt, s id 0.1<br>0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 1 10 100 1000<br>VSD, Source-to-Drain Voltage (V) VDS , Drain-toSource Voltage (V)<br>Fig. 7 Typical Source-to-Drain Diode Fig 8. Maximum Safe Operating Area<br> Forward Voltage<br>140 120<br>120 Limited By Package<br>115<br>100<br>mee AT<br>80 A ce<br>110<br>60 fe ULL ELL<br>ee ee ee Wa<br>40 HENS 105 ELLE<br>20<br>0 CCEEETNrN 100 EEEE EEL<br>-60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>25 50 75 100 125 150 175<br> TC , Case Temperature (°C) TJ , Junction Temperature (°C)<br>ISD, Reverse Drain Current (A) ID, Drain-to-Source Current (A)<br>ID, Drain Current (A)<br>V(BR)DSS , Drain-to-Source Breakdown Voltage<br>**----- End of picture text -----**<br> **==> picture [506 x 435] intentionally omitted <==** **----- Start of picture text -----**<br> 140 120<br>120 Limited By Package<br>115<br>100<br>mee AT<br>80 A ce<br>110<br>60 fe ULL ELL<br>ee ee ee Wa<br>40 HENS 105 ELLE<br>20<br>0 rNCCEEETNrN 100 EEEE EEL<br>-60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>25 50 75 100 125 150 175<br> TC , Case Temperature (°C) TJ , Junction Temperature (°C)<br>Maximum Drain Current vs. Case Temperature Fig 10. Drain-to-Source Breakdown Voltage<br>4.0 2400<br> ID<br>3.5 Pf | ft TOP 12A<br>2000<br> 17A<br>3.0 BOTTOM 75A<br>THA 1600 ONE<br>2.5 P| ft | LJ '<br>2.0 1200<br>1.5<br>FR 800<br>1.0<br>aa a 400 NS<br>0.5<br>a ae Ne<br>0.0 4mm 0 ptt<br>0 20 40 60 80 100 120 25 50 75 100 125 150 175<br>VDS, Drain-to-Source Voltage (V) Starting TJ, Junction Temperature (°C)<br>ID, Drain Current (A)<br>Energy (µJ)<br>EAS, Single Pulse Avalanche Energy (mJ)<br>V(BR)DSS , Drain-to-Source Breakdown Voltage<br>**----- End of picture text -----**<br> **Fg 9.** Maximum Drain Current vs. Case Temperature **Fig 10.** Drain-to-Source Breakdown Voltage **Fig 11.** Typical COSS Stored Energy **Fig 12.** Maximum Avalanche Energy vs. Drain Current 4 2015-10-27 ~~a~~ ~~Cinfineon~~ AUIRFS/SL4310 ~~LLL~~ **==> picture [436 x 418] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>D = 0.50<br>0.1 0.20 —<br>0.10<br>0.01 0.050.020.01 J J1 1 R1 R 1 2 R 2 2 R 2 C C Ri (°C/W) 0.1962 I (sec)0.00117<br>Ci= Ci= iRiiRi 0.2542 0.016569<br>0.001<br>Notes:<br>SINGLE PULSE 1. Duty Factor D = t1/t2<br>ani ( THERMAL RESPONSE ) zal vu 2. Peak Tj = P dm x Zthjc + Tc hurl<br>0.0001 Fane<br>1E-006 1E-005 0.0001 | 0.001 cr 0.01 0.1<br>t1 , Rectangular Pulse Duration (sec)<br>Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case<br>100<br>Allowed avalanche Current vs avalanche<br>pulsewidth, tav, assuming Tj = 150°C<br>and Tstart =25°C (Single Pulse)<br>Duty Cycle = Single Pulse<br>0.01<br>10 0.05<br>0.10<br>Allowed avalanche Current vs avalanche<br>1 pulsewidth, tav, assuming ‘ite j = 25°C and ell<br>Tstart = 150°C.<br>hocHEC<br>0.1<br>1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01<br>Thermal Response ( Z thJC )<br>Avalanche Current (A)<br>**----- End of picture text -----**<br> **==> picture [30 x 8] intentionally omitted <==** **----- Start of picture text -----**<br> tav (sec)<br>**----- End of picture text -----**<br> **Fig 14.** Avalanche Current vs. Pulse width **==> picture [525 x 196] intentionally omitted <==** **----- Start of picture text -----**<br> 1000 Notes on Repetitive Avalanche Curves , Figures 14, 15:<br>TOP Single Pulse<br>(For further info, see AN-1005 at www.infineon.com)<br>BOTTOM 1% Duty Cycle<br>1. Avalanche failures assumption:<br>800 I D = 75A Purely a thermal phenomenon and failure occurs at a temperature far in<br>Na<br>excess of Tjmax. This is validated for every part type.<br>2. Safe operation in Avalanche is allowed as long as Tjmax is not exceeded. jmax is not exceeded. is not exceeded.<br>600 3. Equation below based on circuit and waveforms shown in Figures 18a, 18b.<br>NSO 4. PD (ave) = Average power dissipation per single avalanche pulse.<br>5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase<br>400<br>during avalanche).<br>USNTTT<br>6. Iav = Allowable avalanche current.<br>7. T = Allowable rise in junction temperature, not to exceedT = Allowable rise in junction temperature, not to exceed = Allowable rise in junction temperature, not to exceedAllowable rise in junction temperature, not to exceed Tjmax jmax (assumed as<br>200<br>25°C in Figure 13, 14).<br>ITNT tav = Average time in avalanche.<br>0 ELENA D = Duty cycle in avalanche = tav ·f<br>25 50 75 100 125 150 175 ZthJC(D, tav) = Transient thermal resistance, see Figures 13)<br>Starting TJ , Junction Temperature (°C) PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC<br>EAR , Avalanche Energy (mJ)<br>**----- End of picture text -----**<br> 2. Safe operation in Avalanche is allowed as long as Tjmax is not exceeded. jmax is not exceeded. is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 18a, 18b. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 7. T = Allowable rise in junction temperature, not to exceedT = Allowable rise in junction temperature, not to exceed = Allowable rise in junction temperature, not to exceedAllowable rise in junction temperature, not to exceed Tjmax jmax (assumed as 25°C in Figure 13, 14). **PD (ave) = 1/2 ( 1.3·BV·Iav) =** **T/ ZthJC Iav = 2** **T/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav** **Fig 15.** Maximum Avalanche Energy vs. Temperature 2015-10-27 5 AUIRFS/SL4310 **==> picture [505 x 437] intentionally omitted <==** **----- Start of picture text -----**<br> 5.0 20<br>ID = 1.0A<br>ID = 1.0mA<br>16<br>4.0 I D = 250µA<br>Hee 12 TTT EE<br>3.0 PSST Ll ery<br>8<br>2.0 TTT ANSE AT IF = 30A<br>4 VR = 85V<br>BN Wt |p TJ = 125°C<br>TJ = 25°C<br>1.0 ELEELETS 0 PATH=|<br>-75 -50 -25 0 25 50 75 100 125 150 175 100 200 300 400 500 600 700 800 900 1000<br>TJ , Temperature ( °C ) dif / dt - (A / µs)<br>Fig 16. Threshold Voltage vs. Temperature Fig. 17 - Typical Recovery Current vs. dif/dt f/dt /dt<br>500<br>20<br>400<br>16 TTL TOT.<br>300<br>12<br>Rane Deae CATER<br>200<br>8<br>TET ELT. LETT<br>IF = 45A IF = 30A<br>4 VR = 85V 100 VR = 85V<br>TJ = 125°C TJ = 125°C<br>wlPPE | po TJ = 25°C = 0 orTo TJ = 25°C<br>0<br>100 200 300 400 500 600 700 800 900 1000<br>100 200 300 400 500 600 700 800 900 1000<br>dif / dt - (A / µs)<br>dif / dt - (A / µs)<br>IRRM - (A)<br>IRRM - (A)<br>VGS(th) Gate threshold Voltage (V)<br>QRR - (nC)<br>**----- End of picture text -----**<br> **Fig. 17** - Typical Recovery Current vs. dif/dt f/dt /dt **Fig. 18** - Typical Recovery Current vs. dif/dt **Fig. 19** - Typical Stored Charge vs. dif/dt **==> picture [198 x 167] intentionally omitted <==** **----- Start of picture text -----**<br> 500<br>400 TTLLILE<br>300<br>SRREBEADE<br>200<br>LTT IF = 45A<br>100 ep V R = 85V<br>TJ = 125°C<br>TJ = 25°C<br>PEL<br>0<br>QRR - (nC)<br>**----- End of picture text -----**<br> **==> picture [176 x 24] intentionally omitted <==** **----- Start of picture text -----**<br> 100 200 300 400 500 600 700 800 900 1000<br>dif / dt - (A / µs)<br>**----- End of picture text -----**<br> **Fig. 20** - Typical Stored Charge vs. dif/dt 6 2015-10-27 ~~a~~ ~~Cinfir~~ AUIRFS/SL4310 ~~a~~ **Fig 21.** Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs **==> picture [175 x 108] intentionally omitted <==** **----- Start of picture text -----**<br> 15V<br>L DRIVER<br>VDS<br>R G D.U.T +<br>- [V][DD]<br>20V JL IAS<br>ae tp Y 0.01<br>**----- End of picture text -----**<br> **Fig 22a.** Unclamped Inductive Test Circuit **==> picture [112 x 26] intentionally omitted <==** **----- Start of picture text -----**<br> V(BR)DSS<br>tp ><br>**----- End of picture text -----**<br> **==> picture [18 x 9] intentionally omitted <==** **----- Start of picture text -----**<br> IAS<br>**----- End of picture text -----**<br> **Fig 22b.** Unclamped Inductive Waveforms **Fig 23a.** Switching Time Test Circuit **Fig 23b.** Switching Time Waveforms **==> picture [188 x 128] intentionally omitted <==** **----- Start of picture text -----**<br> Id<br>Vds :<br>Vgs<br>'i<br>!<br>'|<br>Vgs(th) !t<br>!t<br>Qgs1 Qgs2 Qgd Qgodr<br>**----- End of picture text -----**<br> **Fig 24a.** Gate Charge Test Circuit **Fig 24b.** Gate Charge Waveform 2015-10-27 7 AUIRFS/SL4310 ~~LLL~~ ## ~~Cinfin eon~~ **D[2] Pak (TO-263AB) Package Outline** (Dimensions are shown in millimeters (inches)) ## **D[2] Pak (TO-263AB) Part Marking Information** **==> picture [331 x 148] intentionally omitted <==** **----- Start of picture text -----**<br> Part Number AUIRFS4310<br>Date Code<br>IR Logo T é4R YWWA Y= Year<br>WW= Work Week<br><br>XX XX<br>[|<br>Lot Code<br>**----- End of picture text -----**<br> Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 8 2015-10-27 AUIRFS/SL4310 ~~LLL~~ ## ~~Cinfineon~~ **TO-262 Package Outline** (Dimensions are shown in millimeters (inches) ## **TO-262 Part Marking Information** **==> picture [331 x 148] intentionally omitted <==** **----- Start of picture text -----**<br> Part Number AUIRFSL4310<br>Date Code<br>IR Logo T é4R YWWA Y= Year<br>WW= Work Week<br><br>XX XX<br>[|<br>Lot Code<br>**----- End of picture text -----**<br> Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 9 2015-10-27 AUIRFS/SL4310 ~~LLL~~ ## ~~Cinfineon~~ ## **D[2] Pak (TO-263AB) Tape & Reel Information** (Dimensions are shown in millimeters (inches)) **==> picture [386 x 164] intentionally omitted <==** **----- Start of picture text -----**<br> TRR<br>1.60 (.063)<br>1.50 (.059)<br>1.60 (.063)<br>4.10 (.161)<br>3.90 (.153) 1.50 (.059) 0.368 (.0145)<br>0.342 (.0135)<br>FEED DIRECTION 1.85 (.073) 11.60 (.457)<br>1.65 (.065) 11.40 (.449) 24.30 (.957)<br>15.42 (.609)<br>23.90 (.941)<br>15.22 (.601)<br>TRL<br>1.75 (.069)<br>10.90 (.429) 1.25 (.049)<br>10.70 (.421) 4.72 (.136)<br>16.10 (.634) 4.52 (.178)<br>15.90 (.626)<br>**----- End of picture text -----**<br> **==> picture [71 x 7] intentionally omitted <==** **----- Start of picture text -----**<br> FEED DIRECTION<br>**----- End of picture text -----**<br> **==> picture [376 x 188] intentionally omitted <==** **----- Start of picture text -----**<br> 13.50 (.532) 27.40 (1.079)<br>12.80 (.504) 23.90 (.941)<br>4<br>330.00 60.00 (2.362)<br>(14.173) MIN.<br> MAX.<br>30.40 (1.197)<br>NOTES : MAX.<br>1. COMFORMS TO EIA-418.<br>26.40 (1.039) 4<br>2. CONTROLLING DIMENSION: MILLIMETER. 24.40 (.961)<br>3. DIMENSION MEASURED @ HUB. 3<br>**----- End of picture text -----**<br> 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 10 2015-10-27 ~~ie~~ AUIRFS/SL4310 ~~&»«=«=»™§F5F eed~~ ## **Qualification Information** Automotive (per AEC-Q101) **Qualification Level** Comments: This part number(s) passed Automotive qualification. Infineon’s Industrial and Consumer qualification level is granted by extension of the higher Automotive level. D[2] -Pak **Moisture Sensitivity Level** MSL1 TO-262 Class M4 (+/- 425V)[†] Machine Model AEC-Q101-002 Class H2 (+/- 4000V)[†] **ESD** Human Body Model AEC-Q101-001 Class C4 (+/- 1000V)[†] Charged Device Model AEC-Q101-005 **RoHS Compliant** Yes - Highest passing voltage. ## **Revision History** |**Date**|||**Comments**| |---|---|---|---| |10/27/2015||Updated datasheet with corporate template|| |||Corrected orderingtable onpage 1.|| **Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2015 All Rights Reserved.** ## **IMPORTANT NOTICE** The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office (www.infineon.com). ## **WARNINGS** Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not ~~_~~ be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 11 2015-10-27
Updated at February 9, 2023
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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