Image not available
Illustrative purposes only
AUIRFS4127
Power MOSFET, N Channel, 200 V, 72 A, 0.0186 ohm, TO-263AB, Surface Mount
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single MOSFETs
- No. of Pins: 3Pins
- Channel Type: N Channel
- Product Range: HEXFET
- Qualification: AEC-Q101
- Power Dissipation: 375W
- Transistor Mounting: Surface Mount
- Transistor Polarity: N Channel
- Power Dissipation Pd: 375W
- Rds(on) Test Voltage: 10V
- On Resistance Rds(on): 0.0186ohm
- Transistor Case Style: TO-263AB
- Drain Source Voltage Vds: 200V
- Operating Temperature Max: 175°C
- Continuous Drain Current Id: 72A
- Drain Source On State Resistance: 0.0186ohm
- Automotive Qualification Standard: AEC-Q101
- Gate Source Threshold Voltage Max: 5V
| Delivery and price | |
|---|---|
| Units per pack | 500 |
| Price | 1.81 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
~~Cinfin eon~~
AUIRFS4127 **AUTOMOTIVE GRADE** ~~Cinfin eon a~~ **Features** HEXFET[® ] Power MOSFET Advanced Process Technology Ultra Low On-Resistance D **VDSS 200V** 175°C Operating Temperature Fast Switching **RDS(on) typ. 18.6m** G Repetitive Avalanche Allowed up to Tjmax **max 22m** Lead-Free, RoHS Compliant Automotive Qualified * S **ID 72A** ~~==~~ **Description** D Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon S area. Additional features of this design are a 175°C junction G operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make D[2] Pak this design an extremely efficient and reliable device for use in AUIRFS4127 Automotive applications and a wide variety of other applications. **G D S** Gate Drain Source ~~[+~~ **Standard Pack Base part number Package Type Orderable Part Number Form Quantity** Tube 50 AUIRFS4127 AUIRFS4127 D[2] -Pak ~~OO~~ Tape and Reel Left 800 AUIRFS4127TRL **Absolute Maximum Ratings** Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
|otherwise specified.||||
|---|---|---|---|
||**Parameter**|**Max.**|**Units**|
|ID @TC= 25°C|Continuous Drain Current,VGS @10V|72|A|
|ID @TC= 100°C|Continuous Drain Current,VGS @10V|51||
|IDM|Pulsed Drain Current|300||
|PD @TC= 25°C|Power Dissipation|375|W|
||Linear DeratingFactor|2.5|W/°C|
|VGS|Gate-to-Source Voltage|± 20|V|
|dv/dt<br>~~——————~~|Peak Diode Recovery <br>~~——————~~|57<br>~~——————~~|V/ns<br>~~——————~~|
|EAS<br>~~——————~~|Single Pulse Avalanche Energy (Thermallylimited) <br>~~——————~~|250<br>~~——————~~|mJ<br>~~——————~~|
|IAR<br>~~——————~~|Avalanche Current<br>~~——————~~|See Fig. 14, 15, 22a, 22b<br>~~——————~~|A<br>~~——————~~|
|EAR<br>~~——————~~|Repetitive Avalanche Energy <br>~~——————~~||mJ<br>~~——————~~|
|TJ<br>TSTG<br>~~a a~~|Operating Junction and<br>Storage Temperature Range<br>~~a~~|-55 to + 175|°C|
|~~a a~~|SolderingTemperature for 10 seconds<br>~~a~~|300(1.6mm from case)||
1
2015-10-27
AUIRFS4127 ~~LLL~~
## ~~Cinfin eon~~
|**Static Electrical Characteristics@ TJ = 25°C(unless otherwise specified) **|
|---|
|**Symbol**<br>**Parameter**<br>**Min.**<br>**Typ. Max. Units**<br>**Conditions**<br>V(BR)DSS<br>Drain-to-Source Breakdown Voltage<br>200<br>–––<br>–––<br>V<br>VGS= 0V,ID= 250µA<br>V(BR)DSS/TJBreakdown Voltage Temp. Coefficient<br>–––<br>0.23<br>–––<br>V/°C Reference to 25°C,ID= 5mA<br>RDS(on)<br>Static Drain-to-Source On-Resistance<br>–––<br>18.6<br>22<br>m VGS= 10V,ID= 44A<br>VGS(th)<br>Gate Threshold Voltage<br>3.0<br>–––<br>5.0<br>V<br>VDS= VGS,ID= 250µA<br>IDSS<br>Drain-to-Source Leakage Current<br>–––<br>–––<br>20<br>µA<br>VDS= 200V,VGS= 0V<br>–––<br>–––<br>250<br>VDS= 200V, VGS= 0V, TJ= 125°C<br>IGSS<br>Gate-to-Source Forward Leakage<br>–––<br>–––<br>100<br>VGS= 20V<br>Gate-to-Source Reverse Leakage<br>–––<br>–––<br>-100<br>VGS= -20V<br>RG<br>Internal Gate Resistance<br>–––<br>3.0<br>–––<br><br>nA<br>gfs<br>ForwardTrans conductance<br>79<br>–––<br>–––<br>S<br>VDS=50V,ID= 44A<br>~~ee~~<br>~~es~~<br>~~Po~~<br>~~|————i~~<br>~~I~~<br>~~ee~~<br>~~—~~<br>~~—~~<br>—<br>~~eeee~~<br>~~||~~|
|**Dynamic Electrical Characteristics@ TJ = 25°C(unless otherwise specified) **|
|**Symbol**<br>**Parameter**<br>**Min. Typ. Max. Units**<br>**Conditions**<br>Qg<br>Total Gate Charge<br>–––<br>100<br>150<br>nC<br>ID= 44A<br>Qgs<br>Gate-to-Source Charge<br>–––<br>30<br>–––<br>VDS= 100V<br>Qgd<br>Gate-to-Drain("Miller")Charge<br>–––<br>31<br>–––<br>VGS= 10V<br>Qsync<br>Total Gate Charge Sync. (Qg- Qgd)<br>–––<br>69<br>–––<br>td(on)<br>Turn-On DelayTime<br>–––<br>17<br>–––<br>ns<br>VDD= 130V<br>tr<br>Rise Time<br>–––<br>18<br>–––<br>ID= 44A<br>td(off)<br>Turn-Off DelayTime<br>–––<br>56<br>–––<br>RG= 2.7<br>tf<br>Fall Time<br>–––<br>22<br>–––<br>VGS= 10V<br>Ciss<br>Input Capacitance<br>–––<br>5380<br>–––<br>pF<br>VGS= 0V<br>Coss<br>Output Capacitance<br>–––<br>410<br>–––<br>VDS= 50V<br>Crss<br>Reverse Transfer Capacitance<br>–––<br>86<br>–––<br>ƒ= 1.0 MHz(See Fig. 5)<br>Cosseff.(ER)Effective Output Capacitance(EnergyRelated)–––<br>360<br>–––<br>VGS= 0V,VDS= 0V to 160V<br>Cosseff. (TR) Effective Output Capacitance (Time Related)<br>–––<br>590<br>–––<br>VGS =0V, VDS =0V to 160V<br>~~ee—}— J~~<br>~~ee~~<br>~~——————~~<br>~~ee~~<br>~~=o ae~~<br>~~—E~~<br>~~===~~<br>~~es~~<br>~~FP~~<br>~~—=== a~~<br>~~+~~|
|**Diode Characteristics**|
|**Symbol**<br>**Parameter**<br>**Min.**<br>**Typ. Max. Units**<br>**Conditions**<br>IS<br>Continuous Source Current<br>––– –––<br>72<br>A<br>MOSFET symbol<br>(BodyDiode)<br>showing the<br>ISM<br>Pulsed Source Current<br>––– –––<br>300<br>integral reverse<br>(BodyDiode) <br>p-njunction diode.<br>VSD<br>Diode Forward Voltage<br>–––<br>–––<br>1.3<br>V<br>TJ =25°C, IS =44A, VGS =0V<br>trr <br>Reverse Recovery Time<br>–––<br>136<br>–––<br>ns<br>TJ= 25°C<br>–––<br>139<br>–––<br>TJ= 125°C<br>Qrr<br>Reverse Recovery Charge<br>–––<br>458<br>–––<br>nC<br>TJ= 25°C<br>–––<br>688<br>–––<br>TJ= 125°C<br>IRRM<br>ReverseRecovery Current<br>–––<br>8.3<br>–––<br>A<br>TJ= 25°C<br>~~VR = 100V,~~<br>~~IF = 44A~~<br>~~di/dt = 100A/µs~~<br>~~ee~~<br>~~nn~~<br>~~= a~~<br>~~So~~<br>~~pf~~<br>;<br>~~==~~<br>|<br>~~pf~~<br>~~|~~|
## **Notes:**
Repetitive rating; pulse width limited by max. junction temperature.
- Limited by TJmax, starting TJ = 25°C, L = 0.26mH, RG = 25, IAS = 44A, VGS =10V. Part not recommended for use above this value.
- ISD 44A, di/dt 760A/µs, VDD V(BR)DSS, TJ 175°C.
- Pulse width 400µs; duty cycle 2%.
- Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
- Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS.
- When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994.
- R is measured at TJ approximately 90°C.
- RJC value shown is at time zero.
2
2017-03-28
AUIRFS4127 ~~LLL~~
## ~~Cinfineon~~
**==> picture [488 x 667] intentionally omitted <==**
**----- Start of picture text -----**<br>
1000 1000<br>VGS VGS<br>TOP 15V TOP 15V<br>10V 10V<br>100 8.0V7.0V Oy 8.0V 7.0V i<br>6.0V 100 6.0V<br>5.5V 5.5V<br>5.0V 5.0V<br>10 BOTTOM 4.5V BOTTOM 4.5V<br>10<br>1<br>Snr mB prtiatl<br>4.5V<br>1<br>0.1 0) fo<br>4.5V 60µs PULSE WIDTH 60µs PULSE WIDTH<br>Tj = 25°C Tj = 175°C<br>0.01 0.1<br>a Bill Een<br>0.1 1 10 100 0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)<br>Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics<br>1000 3.5<br>VDS = 50V ID = 44A<br> 60µs PULSE WIDTH 3.0 V GS = 10V<br>100<br>2.5<br>T = 175°C<br>10 =Af J 2.0 FCCCELEELLD<br>T = 25°C<br>J 1.5<br>BUNUUEDANEE<br>1 TA CoE<br>1.0<br>a NINE) ZA0ERE<br>0.1 ff 0.5 CETL EEL EL<br>3.0 4.0 5.0 6.0 7.0 8.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>VGS, Gate-to-Source Voltage (V) TJ , Junction Temperature (°C)<br>Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance vs. Temperature<br>8000 VGS = 0V, f = 1 MHZ 16<br>Ciss = Cgs + Cgd, Cds SHORTED ID= 44A<br>Crss = Cgd V DS = 160V<br>6000 C oss = C ds + C gd 12 V DS = 100V<br>Ciss VDS= 40V<br>4000 8<br>Ti canesa<br>2000 4<br>NU Zan<br>Coss<br>Crss<br>0 0<br>SSA tL YALL|<br>1 10 100 0 20 40 60 80 100 120<br>VDS, Drain-to-Source Voltage (V) QG Total Gate Charge (nC)<br>C, Capacitance (pF)<br>VGS, Gate-to-Source Voltage (V)<br>RDS(on) , Drain-to-Source On Resistance (Normalized)<br>)<br>ID, Drain-to-Source Current<br>ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>
**Fig 2.** Typical Output Characteristics
**Fig 4.** Normalized On-Resistance vs. Temperature
**Fig 5.** Typical Capacitance vs. Drain-to-Source Voltage
**Fig 6.** Typical Gate Charge vs. Gate-to-Source Voltage
3
2017-03-28
AUIRFS4127
**==> picture [487 x 434] intentionally omitted <==**
**----- Start of picture text -----**<br>
1000 1000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br>100 TJ = 175°C 100 100µsec<br>1msec<br>10 HAT 10<br>VL TJ = 25°C Siti sr Bi<br>10msec<br>1 1<br>Tc = 25°C<br>dL AN<br>Tj = 175°C<br>VGS = 0V Single Pulse DC<br>0.1 Jif 0.1 ANS<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1 10 100 1000<br>VSD, Source-to-Drain Voltage (V) VDS, Drain-toSource Voltage (V)<br>Fig 8. Maximum Safe Operating Area<br>Fig 7. Typical Source-Drain Diode Forward Voltage<br>260<br>80<br>Id = 5mA<br>240<br>60 MTawaw TLL::<br>220<br>40<br>PeSKEA PIE<br>200<br>20 TT LN- TTL.<br>180<br>TTLEN LLL<br>0 -60 -40 -20 0 20 40 60 80 100 120 140160160 180<br>25 50 75 100 125 150 175<br>TJ , Temperature ( °C )<br> TC , Case Temperature (°C)<br>ISD, Reverse Drain Current (A)<br>ID, Drain Current (A)<br>ID, Drain-to-Source Current (A)<br>V(BR)DSS, Drain-to-Source Breakdown Voltage (V)<br>**----- End of picture text -----**<br>
**==> picture [494 x 447] intentionally omitted <==**
**----- Start of picture text -----**<br>
260<br>80<br>Id = 5mA<br>240<br>60 MTawaw TLL::<br>220<br>40<br>PeSKEA PIE<br>200<br>20 TT LN- TTL.<br>180<br>TTLEN LLL<br>0 -60 -40 -20 0 20 40 60 80 100 120 140160160 180<br>25 50 75 100 125 150 175<br>TJ , Temperature ( °C )<br> TC , Case Temperature (°C)<br>Fig 9. Maximum Drain Current vs. Case Temperature Fig 10. Drain-to-Source Breakdown Voltage<br>8.0 1000<br> ID<br>TOP 8.2A<br>800 13A<br>6.0 BOTTOM 44A<br>Ty 600 OR<br>4.0<br>itty 400 PALL<br>2.0<br>200<br>EEZan IN N<br>0.0 Bann 0 S AKES EP<br>0 40 80 120 160 200 25 50 75 100 125 150 175<br>VDS, Drain-to-Source Voltage (V) Starting TJ, Junction Temperature (°C)<br>ID, Drain Current (A)<br>EAS, Single Pulse Avalanche Energy (mJ)<br>Energy (µJ)<br>V(BR)DSS, Drain-to-Source Breakdown Voltage (V)<br>**----- End of picture text -----**<br>
**Fig 9.** Maximum Drain Current vs. Case Temperature
**Fig 10.** Drain-to-Source Breakdown Voltage
**Fig 11.** Typical Coss Stored Energy
**Fig 12.** Maximum Avalanche Energy vs. Drain Current
4 2017-03-28 ~~=”...~~
2017-03-28
~~Cinfin eon~~
AUIRFS4127 ~~LLL~~
**==> picture [545 x 726] intentionally omitted <==**
**----- Start of picture text -----**<br>
1<br>D = 0.50 TT<br>0.1<br>0.20<br>Ch<br>0.10 oe<br>0.05<br>0.01 0.02<br>0.01<br>Notes:<br>SINGLE PULSE 1. Duty Factor D = t1/t2<br>( THERMAL RESPONSE ) 2. Peak Tj = P dm x Zthjc + Tc<br>BFF|on on<br>0.001 A |<br>1E-006 1E-005 0.0001 0.001 0.01 0.1<br>t1 , Rectangular Pulse Duration (sec)<br>Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case<br>100<br>Allowed avalanche Current vs avalanche<br>Duty Cycle = Single Pulse pulsewidth, tav, assuming Tj = 150°C and<br>Tstart =25°C (Single Pulse)<br>0.01<br>10 Seer Se |<br>0.05<br>is 0.10 tac<br>1 Sr<br>Bi Allowed avalanche Current vs avalanche iiiieell aman<br>pulsewidth, tav, assuming j = 25°C and<br>Tstart = 150°C.<br>|Lani<br>0.1<br>TIC Saai<br>1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01<br>tav (sec)<br>Fig 14. Avalanche Current vs. Pulse Width<br>250<br>TOP Single Pulse Notes on Repetitive Avalanche Curves , Figures 14, 15:<br>BOTTOM 1% Duty Cycle (For further info, see AN-1005 at www.irf.com)<br>200 I D = 44A 1.Avalanche failures assumption:<br>T Purely a thermal phenomenon and failure occurs at a<br>temperature far in excess of Tjmax. This is validated for every<br>150 part type.<br>2. Safe operation in Avalanche is allowed as long asTjmax is not<br>ANNOTTTT exceeded.<br>3. Equation below based on circuit and waveforms shown in Figures<br>100 22a, 22b.<br>ENN 4. PD (ave) = Average power dissipation per single avalanche pulse.<br>5. BV = Rated breakdown voltage (1.3 factor accounts for voltage<br>50 increase during avalanche).<br>HDDS SUTE 6. Iav = Allowable avalanche current.<br>7. T = Allowable rise in junction temperature, not to exceed Tjmax<br>ELLE ISSN.<br>0 (assumed as 25°C in Figure 14, 15).<br>25 50 75 100 125 150 175 tav = Average time in avalanche.<br>D = Duty cycle in avalanche = tav ·f<br>Starting TJ , Junction Temperature (°C) ZthJC(D, tav) = Transient thermal resistance, see Figures 14)<br>PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC<br>Iav = 2T/ [1.3·BV·Zth]<br>Fig 15. Maximum Avalanche Energy vs. Temperature EAS (AR) = PD (ave)·tav<br>5 2017-03-28<br>=.<br>EAR , Avalanche Energy (mJ)<br>Thermal Response ( Z thJC )<br>Avalanche Current (A)<br>**----- End of picture text -----**<br>
AUIRFS4127 ~~LL~~
## ~~Cinfineon~~
**==> picture [485 x 431] intentionally omitted <==**
**----- Start of picture text -----**<br>
6.0 50<br>I D = 1.0A<br>ID = 1.0mAD = 1.0mA = 1.0mA<br>5.0 I D = 250µA 40<br>4.0 Fo 30 RERRRRDDS<br>RSL Coe<br>3.0 20<br>PAPAS) [opeeet<br>IF = 29A<br>2.0 10 VR = 100V<br>TJ = 125°C<br>TJ = 25°C<br>ANY BATTS<br>1.0 0<br>LEE TT TER TER EET<br>-75 -50 -25 0 25 50 75 100 125 150 175 100 200 300 400 500 600 700 800 900 1000<br>TJ , Temperature ( °C ) dif / dt - (A / µs)<br>Fig 16. Threshold Voltage vs. Temperature Fig 17. Typical Recovery Current vs. dif/dt<br>60 3000<br>50 EERE 2500 ERR<br>40 2000<br>ELLE BRRREERES<br>30 1500<br>20 ct| ert | 1000 |eet)Le<br>ett IF = 44A peeeeaaii IF = 29A<br>VR = 100V VR = 100V<br>10 500<br>TJ = 125°C TJ = 125°C<br>TJ = 25°C TJ = 25°C<br>0 ae EaaaE 0 | Tite<br>100 200 300 400 500 600 700 800 900 1000 100 200 300 400 500 600 700 800 900 1000<br>dif / dt - (A / µs) dif / dt - (A / µs)<br>QRR - (nC)<br>IRRM - (A)<br>IRRM - (A)<br>**----- End of picture text -----**<br>
**==> picture [211 x 196] intentionally omitted <==**
**----- Start of picture text -----**<br>
6.0<br>I D = 1.0A<br>ID = 1.0mAD = 1.0mA = 1.0mA<br>5.0 I D = 250µA<br>Fo<br>4.0<br>RSL<br>3.0<br>PAPAS)<br>2.0<br>ANY<br>1.0<br>LEE TT TER TER<br>-75 -50 -25 0 25 50 75 100 125 150 175<br>TJ , Temperature ( °C )<br>VGS(th) Gate threshold Voltage (V)<br>**----- End of picture text -----**<br>
**Fig 17.** Typical Recovery Current vs. dif/dt
**Fig 18.** Typical Recovery Current vs. dif/dt
**Fig 19.** Typical Stored Charge vs. dif/dt
**==> picture [207 x 195] intentionally omitted <==**
**----- Start of picture text -----**<br>
3000<br>2500 PL dere<br>2000<br>titdep<br>1500<br>EERoee2dn<br>1000 eer LL<br>IF = 44A<br>VR = 100V<br>500<br>TJ = 125°C<br>TJ = 25°C<br>0 eeaaa |<br>100 200 300 400 500 600 700 800 900 1000<br>dif / dt - (A / µs)<br>QRR - (nC)<br>**----- End of picture text -----**<br>
**Fig 20.** Typical Stored Charge vs. dif/dt
6
2017-03-28
~~Cinfi~~
## AUIRFS4127 ~~_—~~
**Fig 21.** Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET[® ] Power MOSFETs
**==> picture [157 x 87] intentionally omitted <==**
**----- Start of picture text -----**<br>
15V<br>VDS L DRIVER<br>R G D.U.T +<br>- [V][DD]<br>IAS<br>20V ae<br>tp 0.01<br>**----- End of picture text -----**<br>
**==> picture [17 x 9] intentionally omitted <==**
**----- Start of picture text -----**<br>
IAS<br>**----- End of picture text -----**<br>
**==> picture [106 x 24] intentionally omitted <==**
**----- Start of picture text -----**<br>
V(BR)DSS<br>tp ><br>**----- End of picture text -----**<br>
**Fig 22a.** Unclamped Inductive Test Circuit
**Fig 22b.** Unclamped Inductive Waveforms
**Fig 23a.** Switching Time Test Circuit
**==> picture [21 x 8] intentionally omitted <==**
**----- Start of picture text -----**<br>
VDD<br>**----- End of picture text -----**<br>
**Fig 23b.** Switching Time Waveforms
**==> picture [172 x 117] intentionally omitted <==**
**----- Start of picture text -----**<br>
Id<br>Vds<br>Vgs<br>Vgs A (th) !| |<br>Qgs1 Qgs2 Qgd Qgodr<br>**----- End of picture text -----**<br>
**Fig 24a.** Gate Charge Test Circuit
**Fig 24b.** Gate Charge Waveform
2017-03-28
7
AUIRFS4127 ~~LLL~~
## ~~Cinfin eon~~
**D[2] Pak (TO-263AB) Package Outline** (Dimensions are shown in millimeters (inches))
## **D[2] Pak (TO-263AB) Part Marking Information**
**==> picture [331 x 148] intentionally omitted <==**
**----- Start of picture text -----**<br>
Part Number AUFS4127<br>Date Code<br>IR Logo T éaR YWWA Y= Year<br>WW= Work Week<br><br>XX XX<br>|<br>Lot Code<br>**----- End of picture text -----**<br>
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
8
2017-03-28
~~Cinfineon~~
AUIRFS4127 ~~LLL~~
**D[2] Pak (TO-263AB) Tape & Reel Information** (Dimensions are shown in millimeters (inches))
**==> picture [365 x 386] intentionally omitted <==**
**----- Start of picture text -----**<br>
TRR<br>1.60 (.063)<br>1.50 (.059)<br>1.60 (.063)<br>4.10 (.161)<br>3.90 (.153) 1.50 (.059) 0.368 (.0145)<br>0.342 (.0135)<br>FEED DIRECTION 1.85 (.073) 11.60 (.457)<br>1.65 (.065) 11.40 (.449) 24.30 (.957)<br>15.42 (.609)<br>23.90 (.941)<br>15.22 (.601)<br>TRL<br>1.75 (.069)<br>10.90 (.429) 1.25 (.049)<br>10.70 (.421) 4.72 (.136)<br>16.10 (.634) 4.52 (.178)<br>15.90 (.626)<br>FEED DIRECTION<br>13.50 (.532) 27.40 (1.079)<br>12.80 (.504) 23.90 (.941)<br>4<br>330.00 60.00 (2.362)<br>(14.173) MIN.<br> MAX.<br>30.40 (1.197)<br>NOTES : MAX.<br>1. COMFORMS TO EIA-418.<br>26.40 (1.039) 4<br>2. CONTROLLING DIMENSION: MILLIMETER. 24.40 (.961)<br>3. DIMENSION MEASURED @ HUB. 3<br>**----- End of picture text -----**<br>
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
9
2017-03-28
AUIRFS4127 ~~Cinfineon LLL~~ **Qualification Information** Automotive (per AEC-Q101) **Qualification Level** Comments: This part number(s) passed Automotive qualification. Infineon’s Industrial and Consumer qualification level is granted by extension of the higher Automotive level. **Moisture Sensitivity Level** D[2] -Pak MSL1 Class H2 (+/- 4000V)[†] Human Body Model AEC-Q101-001 **ESD** Class C5 (+/- 2000V)[†] Charged Device Model AEC-Q101-005 **RoHS Compliant** Yes ~~—=~~ † Highest passing voltage. **Revision History Date Comments** Updated datasheet with corporate template 10/27/2015 Corrected ordering table on page 1. 03/28/2017 Removed TO-262 Pak “AUIRFSL4127” this devices TO-262 Pak was never released and this part was erroneously added to the datasheet. –All pages **Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2015 All Rights Reserved. IMPORTANT NOTICE** The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office (www.infineon.com).
## **WARNINGS**
Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
10
2017-03-28
Updated at February 9, 2023
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
About Novapart
Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
Learn more →Stock Shortage Specialist
When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
Request a quote →Compliant Alternatives
We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
BOM Analysis service →