AUIRFS3306TRL
Power MOSFET, N Channel, 60 V, 120 A, 3300 µohm, TO-263 (D2PAK), Surface Mount
- Manufacturer: INFINEON
- Product type: Single MOSFETs
- Available until stocks are exhausted
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (27-Jun-2018)
- No. of Pins: 3Pins
- Channel Type: N Channel
- Product Range: HEXFET Series
- Qualification: AEC-Q101
- Power Dissipation: 230W
- Transistor Mounting: Surface Mount
- Rds(on) Test Voltage: 10V
- Transistor Case Style: TO-263 (D2PAK)
- Drain Source Voltage Vds: 60V
- Operating Temperature Max: 175°C
- Continuous Drain Current Id: 120A
- Drain Source On State Resistance: 3300µohm
- Gate Source Threshold Voltage Max: 4V
| Delivery and price | |
|---|---|
| Units per pack | 500 |
| Price | 2.42 € |
| Current stock | 1000+ |
| Lead time | 7 days |
**AUTOMOTIVE GRADE** AUIRFS3306 ~~Cinfineon —~~ HEXFET[® ] Power MOSFET **Features VDSS 60V** Advanced Process Technology Ultra Low On-Resistance **RDS(on) typ. 3.3m** 175°C Operating Temperature **max. 4.2m** Fast Switching **ID (Silicon Limited) 160A** Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant ~~——~~ **ID (Package Limited) 120A** Automotive Qualified * D **Description** Specifically designed for Automotive applications, this HEXFET[® ] S Power MOSFET utilizes the latest processing techniques to achieve G extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching D[2 ] Pak speed and improved repetitive avalanche rating. These features AUIRFS3004 combine to make this design an extremely efficient and reliable device **G D S** for use in Automotive applications and a wide variety of other applications. ~~-|~~ Gate Drain Source **Standard Pack Base part number Package Type Orderable Part Number Form Quantity** Tube 50 AUIRFS3306 AUIRFS3306 D[2] -Pak Tape and Reel Left 800 AUIRFS3306TRL ~~ee~~ ## **Absolute Maximum Ratings** Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified. |**Symbol**|**Parameter**|**Max.**|**Units**| |---|---|---|---| |ID@ TC= 25°C|Continuous Drain Current, VGS@ 10V (Silicon Limited)|160|A| |ID @TC= 100°C|Continuous Drain Current,VGS @10V(Silicon Limited)|110|| |ID@ TC= 25°C|Continuous Drain Current, VGS@ 10V (Wire Bond Limited)|120|| |IDM|Pulsed Drain Current|620|| |PD@TC= 25°C|Maximum Power Dissipation|230|W| |~~———~~|Linear Derating Factor<br>~~———aa~~|1.5<br>~~aa~~|W/°C<br>~~aa~~| |VGS<br>~~———~~|Gate-to-SourceVoltage<br>~~———aa~~|± 20<br>~~aa~~|V<br>~~aa~~| |EAS<br>~~———~~|Single Pulse Avalanche Energy (ThermallyLimited) <br>~~———aa~~|184<br>~~aa~~|mJ<br>~~aa~~| |IAR<br>~~———~~|Avalanche Current<br>~~———aa~~|See Fig.14,15, 22a, 22b<br>~~aa~~|A<br>~~aa~~| |EAR<br>~~———~~|Repetitive Avalanche Energy <br>~~———aa~~||mJ<br>~~aa~~| |dv/dt<br>~~———~~|Peak Diode Recovery <br>~~———aa~~|14<br>~~aa~~|V/ns<br>~~aa~~| |TJ<br>TSTG<br>~~———~~<br>~~a~~|Operating Junction and<br>Storage Temperature Range<br>~~——— aa~~<br>~~a~~|-55 to + 175<br>~~aa~~<br>~~a~~|°C<br>~~aa~~<br>~~a~~<br>~~ee~~| |~~a~~<br>~~re~~|SolderingTemperature,for 10 seconds(1.6mm from case)<br>~~a~~<br>~~re~~|300<br>~~a~~<br>~~ee~~|| 1 2017-10-11 ~~Cinfineon~~ AUIRFS3306 ~~__L_LL~~ |Qg<br>~~a~~<br>~~a~~|Total Gate Charge<br>~~ee~~<br>|–––<br>~~ee~~<br>~~ss~~<br>|85<br>~~ee~~<br>~~ss~~<br>|120<br>~~ee~~<br>|nC|ID= 75A<br>VDS= 30V<br>VGS= 10V| |---|---|---|---|---|---|---| |g<br>Qgs<br>~~a a~~<br>~~ee~~|Gate-to-Source Charge<br>~~a~~|–––<br>~~ss~~<br>~~a~~|20<br>~~ss~~<br>~~a~~|–––<br>~~a~~||| |gs<br>Qgd<br>~~a~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|Gate-to-Drain Charge<br>~~a~~<br>~~ee~~|–––<br>~~a~~<br>~~ee~~<br>~~es~~|26<br>~~a~~<br>~~ee~~<br>~~ee~~|–––<br>~~a~~<br>~~ee~~||| |gd<br>Qsync<br>~~a~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|Total Gate Charge Sync.(Qg - Qgd)<br>~~a~~<br>~~ee~~|–––<br>~~a~~<br>~~ee~~<br>~~es~~|59<br>~~a~~<br>~~ee~~<br>~~ee~~|–––<br>~~a~~<br>~~ee~~||| |td(on)<br>~~ee~~<br>~~ee~~<br>~~es~~|Turn-On Delay Time<br>~~ee~~<br>~~es~~|–––<br>~~ee~~<br>~~es~~<br>~~es~~|15<br>~~ee~~<br>~~ee~~<br>~~es~~|–––<br>~~ee~~<br>~~es~~|ns|VDD= 30V<br>ID= 75A<br>RG= 2.7<br>VGS= 10V| |d(on)<br>tr<br>~~ee~~<br>~~es~~<br>~~ee~~|RiseTime<br>~~es~~<br>|–––<br>~~es ~~<br>~~es~~<br>~~ee~~<br>|76<br> ~~ee~~<br>~~es~~<br>|–––<br>~~es~~<br>||| |td(off)<br>~~es~~<br>~~a ~~<br>~~ee~~|Turn-Off DelayTime<br>~~es~~<br> ~~ee~~<br>|–––<br>~~es~~<br>~~ee~~<br>~~ee~~<br>|40<br>~~es~~<br>~~ee~~<br>|–––<br>~~es~~<br>~~ee~~<br>||| |d(off)<br>tf<br>~~ee~~<br>~~es~~|Fall Time<br>~~a~~<br>|–––<br>~~ee~~<br>~~a~~<br>|77<br>~~a~~<br>|–––<br>~~a~~<br>||| |Ciss<br>~~ee~~<br>~~es~~<br>~~es~~<br>~~es~~|Input Capacitance<br>~~a~~<br>~~**e**e~~|–––<br>~~ee~~<br>~~a~~<br>~~e~~<br>~~Os~~|4520<br>~~a~~<br>~~e~~|–––<br>~~a~~<br>~~e~~|pF<br>~~Ge~~<br>~~cere~~|VGS= 0V<br>VDS= 50V<br>ƒ= 1.0MHz, See Fig. 5| |Coss<br><br>~~es~~<br>~~es~~<br>~~es~~|Output Capacitance<br>~~a~~<br>~~**e**e~~<br>~~n~~|–––<br>~~a~~<br>~~e~~<br>~~n~~<br>~~Os~~|500<br>~~a~~<br>~~e~~<br>~~n~~|–––<br>~~a~~<br>~~e~~<br>~~n~~||| |Crss<br><br>~~es~~<br>~~es~~<br>~~es~~<br>~~a~~|Reverse Transfer Capacitance<br>~~**e**e~~<br>~~n~~<br>~~nS~~<br>|–––<br>~~e~~<br>~~n~~<br>~~Os~~<br>~~nS~~<br>|250<br>~~e~~<br>~~n~~<br>~~nS~~<br>~~Ge~~<br>|–––<br>~~e~~<br>~~n~~<br>~~nS~~<br>~~Ge~~<br>||| |Coss eff.(ER)<br>~~es~~<br>~~es~~<br>~~a~~|Effective Output Capacitance (Energy Related)<br>~~nS~~<br>|–––<br>~~Os~~<br>~~nS~~<br><br>~~rs~~|720<br>~~nS~~<br>~~Ge~~<br><br>~~rs~~|–––<br>~~nS~~<br>~~Ge~~<br><br>~~ce~~||VGS= 0V, VDS= 0V to 48V| |Coss eff.(TR)<br>~~es~~<br>~~a ~~|Effective Output Capacitance(Time Related)<br>~~nS~~<br> ~~rs~~|–––<br>~~nS~~<br>~~rs~~<br>~~rs~~|880<br>~~nS~~<br>~~Ge~~<br>~~rs~~<br>~~rs~~|–––<br>~~nS~~<br>~~Ge~~<br>~~rs~~<br>~~ce~~||VGS= 0V,VDS= 0V to 48V| |**Diode Characteristics**<br>~~rs~~<br>~~cere~~<br>~~eses~~<br>~~ts Us Od~~||||||| |~~es~~<br>~~>~~|**Parameter **<br>~~es~~<br>~~et~~|**Min.**<br>~~es~~<br>~~ts Us~~<br>~~et~~|**Typ. M**<br>~~es~~<br>~~Us~~<br>~~et He~~|**. Max.**<br>~~es~~<br>~~Us Od~~<br>~~He~~|**Units**<br>~~es~~<br>~~Od~~<br>~~He~~|**Conditions**<br>~~es~~<br>~~He~~| |IS<br>~~es~~<br>~~>~~|Continuous Source Current<br>(Body Diode)<br>~~es~~<br>~~et~~|–––<br>~~es~~<br>~~ts Us~~<br>~~et~~|––– 160<br>~~es~~<br>~~Us~~<br>~~et He~~|––– 160<br>~~es~~<br>~~Us Od~~<br>~~He~~|A<br>~~es~~<br>~~Od~~<br>~~He~~<br>~~Bs~~<br>~~QO~~<br>|MOSFET symbol<br>showing the<br>integral reverse<br>p-njunctiondiode.<br>~~es~~<br>~~He~~<br>~~Bs~~<br>~~QO~~| |ISM<br>~~>~~<br>~~ee~~<br>~~a~~|Pulsed Source Current<br>(BodyDiode)<br>~~et~~<br>~~Bs~~<br>|–––<br>~~et~~<br>~~Bs~~<br>~~rt~~<br>|–––<br>~~et He~~<br>~~Bs~~<br>~~ss~~<br>|620<br>~~He~~<br>~~Bs~~<br>~~ss QO~~<br>||| |VSD<br>~~>~~<br>~~ee~~<br>~~a~~|Diode Forward Voltage<br>~~et~~<br>~~Bs~~<br>|–––<br>~~et~~<br>~~Bs~~<br>~~rt~~<br><br>~~es~~|–––<br>~~et He~~<br>~~Bs~~<br>~~ss~~<br><br>~~ee ee~~|1.3<br>~~He~~<br>~~Bs~~<br>~~ss QO~~<br><br>~~ee~~|V<br>~~He~~<br>~~Bs~~<br>~~QO~~<br><br>~~ee~~|TJ =25°C,IS=75A,VGS =0V<br>~~He~~<br>~~Bs~~<br>~~QO~~| |trr<br>~~ee~~<br>~~a a~~|Reverse Recovery Time<br>~~Bs~~<br>~~a~~<br>~~|~~<br>~~|~~|–––<br>~~Bs~~<br>~~rt~~<br>~~a~~<br>~~es~~<br>~~|~~|31<br>~~Bs~~<br>~~ss~~<br>~~a~~<br>~~ee ee~~<br>|–––<br>~~Bs~~<br>~~ss QO~~<br>~~a~~<br>~~ee~~<br>|ns<br>~~Bs~~<br>~~QO~~<br>~~a~~<br>~~ee~~<br>~~ee~~|TJ= 25°C<br>~~V = 51V,~~<br>~~Bs~~<br>~~QO~~| |||–––<br>~~rt~~<br>~~a~~<br>~~es~~<br>~~|fT~~<br>~~es~~<br>~~|~~|35<br>~~ss~~<br>~~a~~<br>~~ee ee~~<br>~~fT~~<br>~~eee ee~~<br>|–––<br>~~ss QO~~<br>~~a~~<br>~~ee~~<br>~~fT~~<br>~~ee~~<br>||TJ= 125°C<br>~~V~~R~~= 51V,~~<br>~~I = 75A~~<br>~~QO~~| |Qrr<br>~~a a~~<br>~~a a~~<br>~~es~~<br>~~ee~~|Reverse Recovery Charge<br>~~a~~<br>~~|~~<br>~~a~~<br>~~|~~<br><br>|–––<br>~~rt ~~<br>~~a~~<br>~~es ~~<br>~~|fT~~<br>~~a~~<br>~~es~~<br>~~|~~|34<br> ~~ss~~<br>~~a~~<br> ~~ee ee~~<br>~~fT~~<br>~~a~~<br>~~eee ee~~<br>|–––<br>~~ss QO~~<br>~~a~~<br>~~ee~~<br>~~fT~~<br>~~a~~<br>~~ee~~<br>|nC<br>~~QO~~<br>~~a~~<br>~~ee~~<br>~~a~~<br>~~ee~~<br>|TJ= 25°C<br>~~I~~F~~= 75A~~<br>~~di/dt = 100A/µs~~<br>~~QO~~| |||–––<br>~~a~~<br>~~es~~<br>~~||~~<br><br>~~rs~~|45<br>~~a~~<br>~~eee ee~~<br>~~|~~<br>|–––<br>~~a~~<br>~~ee~~<br>~~|~~<br>||TJ= 125°C <br>~~di/dt = 100A/µs~~| |IRRM<br>~~es~~<br>~~ee~~|Reverse RecoveryCurrent<br>~~|~~<br>~~es~~<br>|–––<br>~~es ~~<br>~~||~~<br>~~es~~<br>~~rs~~|1.9<br> ~~eee ee~~<br>~~|~~<br>~~es~~|–––<br>~~ee~~<br>~~|~~<br>~~es~~|A<br>~~ee~~<br>~~es~~|TJ= 25°C| |ton<br>~~es~~<br>~~ee~~|Forward Turn-On Time<br><br><br>~~a~~|Intrinsic turn-on time is negligible(turn-on is dominated byLS+LD)<br>~~|~~<br><br>~~rs~~||||| **Notes:** - Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 120A. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. Repetitive rating; pulse width limited by max. junction temperature. Limited by TJmax, starting TJ = 25°C, L = 0.04mH, RG = 25, IAS = 96A, VGS =10V. Part not recommended for use above this value. - ISD 75A, di/dt 1400A/µs, VDD V(BR)DSS, TJ 175°C. - Pulse width 400µs; duty cycle 2%. - Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. - Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS. - When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994 - R is measured at TJ approximately 90°C. 2 2017-10-11 ~~Cinfineon~~ AUIRFS3306 ~~LL~~ **==> picture [538 x 660] intentionally omitted <==** **----- Start of picture text -----**<br> 1000 1000<br>VGS VGS<br>TOP 15V TOP 15V<br>10V 10V<br>8.0V 8.0V<br>6.0V 6.0V<br>5.5V 5.5V<br>5.0V 5.0V<br>4.8V 4.8V<br>BOTTOM 4.5V BOTTOM 4.5V<br>f<br>100 100<br>4.5V<br>2 | | [fl]<br>4.5V<br> 60µs PULSE WIDTH 60µs PULSE WIDTH<br>Tj = 25°C Tj = 175°C<br>10 all 10 ff<br>0.1 1 10 100 0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)<br>Fig. 1 Typical Output Characteristics Fig. 2 Typical Output Characteristics<br>1000 2.5<br>ID = 75A<br>VGS = 10V<br>100 T = 175°C 2.0<br>J<br>10 1.5<br>ayA FT)<br>T = 25°C ane a<br>J<br>1 1.0<br>fee VDS = 25V ee (nec<br> 60µs PULSE WIDTH<br>0.1 i 0.5 arr<br>2.0 3.0 4.0 5.0 6.0 7.0 8.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>VGS, Gate-to-Source Voltage (V) TJ , Junction Temperature (°C)<br>Fig. 3 Typical Transfer Characteristics Fig. 4 Normalized On-Resistance vs. Temperature<br>8000 20<br>VGS = 0V, f = 1 MHZ ID= 75A<br>Ciss = Cgs + Cgd, Cds SHORTED<br>6000 CCrss oss = C= C ds gd + C gd 16 V VDS= 30V DS= 48V<br>VDS= 12V<br>Ciss<br>a|e 12 iTAy<br>4000<br>Bniihiee! fe<br>8<br>2000<br>4<br>ST Coss TT pa” 4nnn<br>Crss<br>0 meee 0 7TTT<br>1 10 100 0 20 40 60 80 100 120 140<br>VDS, Drain-to-Source Voltage (V) QG Total Gate Charge (nC)<br>ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A)<br>)<br>ID, Drain-to-Source Current<br>VGS, Gate-to-Source Voltage (V)<br>RDS(on) , Drain-to-Source On Resistance (Normalized)<br>C, Capacitance (pF)<br>**----- End of picture text -----**<br> **Fig 5.** Typical Capacitance vs. Drain-to-Source Voltage **Fig 6.** Typical Gate Charge vs. Gate-to-Source Voltage 3 2017-10-11 AUIRFS3306 **==> picture [206 x 196] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>100<br>TJ = 175°C<br>10 ATT T J = 25°C<br>1<br>VGS = 0V<br>0.1<br>0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0<br>VSD, Source-to-Drain Voltage (V)<br>ISD, Reverse Drain Current (A)<br>**----- End of picture text -----**<br> **Fig. 7** Typical Source-to-Drain Diode **==> picture [206 x 196] intentionally omitted <==** **----- Start of picture text -----**<br> 180160 P| fT | lt<br>Limited By Package<br>1401201008060 Pe]FPeslaP|| ftpe,||KR]S[TNee|<br>40200 PFPo}P|| fT|FfLUNEft| |TN| \NG<br>25 50 75 100 125 150 175<br> TC , Case Temperature (°C)<br>ID, Drain Current (A)<br>**----- End of picture text -----**<br> **Fig 9.** Maximum Drain Current vs. Case Temperature **==> picture [207 x 197] intentionally omitted <==** **----- Start of picture text -----**<br> 1.51.0 LEED<br>0.5 Tr<br>yt<br>ALL<br>0.0<br>0 10 20 30 40 50 60<br>VDS, Drain-to-Source Voltage (V)<br>Energy (µJ)<br>**----- End of picture text -----**<br> **Fig 11.** Typical COSS Stored Energy **==> picture [206 x 205] intentionally omitted <==** **----- Start of picture text -----**<br> 10000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br>1000<br>a [es]<br>100 1m sec 10 0µsec<br>poe<br>1 0m sec<br>10<br>1 Tc = 25°C<br>Tj = 175°C DC<br>Single Pulse<br>0.1<br>0.1 1 10 100<br>VDS, Drain-toSource Voltage (V)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br> **Fig 8.** Maximum Safe Operating Area **==> picture [212 x 433] intentionally omitted <==** **----- Start of picture text -----**<br> 80<br>ID = 5mA<br>70<br>60<br>50<br>-60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>TJ , Junction Temperature (°C)<br>Fig 10. Drain-to-Source Breakdown Voltage<br>800<br> ID<br>TOP 13A<br> 18A<br>600 BOTTOM 96A<br>Ny<br>400<br>wae<br>200<br>SS<br>0 [SS<br>25 50 75 100 125 150 175<br>Starting TJ, Junction Temperature (°C)<br>EAS, Single Pulse Avalanche Energy (mJ)<br>V(BR)DSS , Drain-to-Source Breakdown Voltage<br>**----- End of picture text -----**<br> **Fig 10.** Drain-to-Source Breakdown Voltage **Fig 12.** Maximum Avalanche Energy vs. Drain Current 2017-10-11 4 ~~Cinfin eon~~ AUIRFS3306 ~~__L_LL~~ **==> picture [502 x 670] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>TM LT,<br>D = 0.50<br>0.20<br>0.1<br>0.10 cere<br>0.01 0.020.05 Co A J J1 1 R1R1 TT 2 R22R2 C rd Ri (°C/W) 0.249761 | 0.00028 I (sec il )<br>0.01<br>Ci= iRi 0.400239 0.005548<br>0.001 SINGLE PULSE Ba ee<br>( THERMAL RESPONSE )<br>Notes:<br>1. Duty Factor D = t1/t2<br>2. Peak Tj = P dm x Zthjc + Tc<br>0.0001 7<br>1E-006 1E-005 0.0001 0.001 0.01 0.1<br>t1 , Rectangular Pulse Duration (sec)<br>Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case<br>100<br>Duty Cycle = Single Pulse Allowed avalanche Current vs avalanche<br>pulsewidth, tav, assuming Tj = 150°C and<br>0.01 Tstart =25°C (Single Pulse)<br>0.05<br>10 CT 0.10 INci<br>Sa bin TTT<br>Allowed avalanche Current vs avalanche<br>pulsewidth, tav, assuming j = 25°C and<br>Tstart = 150°C.<br>1 CeeelTTT<br>1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01<br>tav (sec)<br>Fig 14. Avalanche Current vs. Pulse width<br>200 Notes on Repetitive Avalanche Curves , Figures 14, 15:<br>TOP Single Pulse (For further info, see AN-1005 at www.infineon.com)<br>BOTTOM 1% Duty Cycle 1. Avalanche failures assumption:<br>160 I D = 96A Purely a thermal phenomenon and failure occurs at a temperature far in<br>TT. excess of Tjmax. This is validated for every part type.<br>2. Safe operation in Avalanche is allowed as long as Tjmaxjmax is not exceeded.<br>120 3. Equation below based on circuit and waveforms shown in Figures 22a, 22b.<br>SSO<br>4. PD (ave) = Average power dissipation per single avalanche pulse.<br>5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase<br>80 during avalanche).<br>SNATTT 6. Iav = Allowable avalanche current.<br>7. T = Allowable rise in junction temperature, not to exceedT = Allowable rise in junction temperature, not to exceed = Allowable rise in junction temperature, not to exceedAllowable rise in junction temperature, not to exceed Tjmax jmax (assumed as<br>40<br>TLELINWEL 25°C in Figure 13, 14).<br>tav = Average time in avalanche.<br>0 EEELL NI. D = Duty cycle in avalanche = tav ·f<br>ZthJC(D, tav) = Transient thermal resistance, see Figures 13)<br>25 50 75 100 125 150 175<br>Starting TJ , Junction Temperature (°C) PD (ave) = 1/2 ( 1.3·BV·Iav) = D (ave) = 1/2 ( 1.3·BV·Iav) = = 1/2 ( 1.3·BV·Iav) = av) = ) = T/ ZthJCthJC<br>EAR , Avalanche Energy (mJ)<br>Thermal Response ( Z thJC )<br>Avalanche Current (A)<br>**----- End of picture text -----**<br> - Purely a thermal phenomenon and failure occurs at a temperature far in 2. Safe operation in Avalanche is allowed as long as Tjmaxjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 22a, 22b. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 7. T = Allowable rise in junction temperature, not to exceedT = Allowable rise in junction temperature, not to exceed = Allowable rise in junction temperature, not to exceedAllowable rise in junction temperature, not to exceed Tjmax jmax (assumed as 25°C in Figure 13, 14). **PD (ave) = 1/2 ( 1.3·BV·Iav) = D (ave) = 1/2 ( 1.3·BV·Iav) = = 1/2 ( 1.3·BV·Iav) = av) = ) =** **T/ ZthJCthJC Iav = 2** **T/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav** **Fig 15.** Maximum Avalanche Energy vs. Temperature 2017-10-11 5 AUIRFS3306 ~~__L_LL~~ ## ~~Cinfin eon~~ **==> picture [212 x 196] intentionally omitted <==** **----- Start of picture text -----**<br> 4.5<br>ID = 1.0A<br>4.0 I D = 1.0mA<br>EO ID = 250µA<br>3.5 ID = 150µA<br>PPE oe:<br>3.0<br>SS<br>2.5<br>PCE SSEES<br>2.0<br>CCCP SX<br>1.5<br>1.0 -CEEEELLNSPLCLEEEEEEN<br>-75 -50 -25 0 25 50 75 100 125 150 175<br>TJ , Temperature ( °C )<br>VGS(th) Gate threshold Voltage (V)<br>**----- End of picture text -----**<br> **==> picture [206 x 196] intentionally omitted <==** **----- Start of picture text -----**<br> 16<br>12 THT<br>ap<br>8 [ber<br>peat<br>4 | eT IF = 30A LLL<br>VR = 51V<br>TJ = 125°C<br>TJ = 25°C<br>0 TTT)q =<br>100 200 300 400 500 600 700 800 900 1000<br>dif / dt - (A / µs)<br>IRRM - (A)<br>**----- End of picture text -----**<br> **Fig 16.** Threshold Voltage vs. Temperature **Fig. 17** - Typical Recovery Current vs. dif/dt **==> picture [497 x 207] intentionally omitted <==** **----- Start of picture text -----**<br> 16 350<br>300<br>12<br>250<br>TH |6© = AA<br>x EEL”<br>200<br>8 ce, oe<br>150<br>4 | LeeATLL IF = 45A 100 EcaneEREane IF = 30A 4an<br>VR = 51V VR = 51V<br>TJ = 125°C 50 T J = 125°C<br>TJ = 25°C TJ = 25°C<br>0 Pq TL] = 0 eeePTTL<br>100 200 300 400 500 600 700 800 900 1000 100 200 300 400 500 600 700 800 900 1000<br>dif / dt - (A / µs) dif / dt - (A / µs)<br>IRRM - (A) QRR - (nC)<br>**----- End of picture text -----**<br> **Fig. 18** - Typical Recovery Current vs. dif/dt **Fig. 19** - Typical Stored Charge vs. dif/dt **==> picture [207 x 196] intentionally omitted <==** **----- Start of picture text -----**<br> 350<br>300 TLLLLLLL<br>250<br>SaGGeennr<br>200 Banneeeve<br>150 Seaenezen<br>100 Saae> IF ee = 45A n<br>VR = 51V<br>50 T J = 125°C<br>TJ = 25°C<br>0 PTT]perce ae<br>100 200 300 400 500 600 700 800 900 1000<br>dif / dt - (A / µs)<br>QRR - (nC)<br>**----- End of picture text -----**<br> **Fig. 20** - Typical Stored Charge vs. dif/dt 6 2017-10-11 ~~= °°”...~~ ~~Cinfir~~ AUIRFS3306 ~~_~~ **Fig 21.** Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs **==> picture [175 x 108] intentionally omitted <==** **----- Start of picture text -----**<br> 15V<br>L DRIVER<br>VDS<br>R G D.U.T +<br>- [V][DD]<br>20V JL IAS<br>ae tp Y 0.01<br>**----- End of picture text -----**<br> **Fig 22a.** Unclamped Inductive Test Circuit **==> picture [112 x 26] intentionally omitted <==** **----- Start of picture text -----**<br> V(BR)DSS<br>tp ><br>**----- End of picture text -----**<br> **==> picture [18 x 9] intentionally omitted <==** **----- Start of picture text -----**<br> IAS<br>**----- End of picture text -----**<br> **Fig 22b.** Unclamped Inductive Waveforms **Fig 23a.** Switching Time Test Circuit **Fig 23b.** Switching Time Waveforms **==> picture [188 x 128] intentionally omitted <==** **----- Start of picture text -----**<br> Vds Hi Id<br>Vgs<br>I<br>|<br>Vgs(th) !! ['] t<br>i t<br>A :<br>Qgs1 Qgs2 Qgd Qgodr<br>**----- End of picture text -----**<br> **Fig 24a.** Gate Charge Test Circuit **Fig 24b.** Gate Charge Waveform 2017-10-11 7 AUIRFS3306 ~~__L_LL~~ ## ~~Cinfin eon~~ **D[2] - Pak (TO-263AB) Package Outline** (Dimensions are shown in millimeters (inches)) ## **D[2] - Pak (TO-263AB) Part Marking Information** **==> picture [331 x 148] intentionally omitted <==** **----- Start of picture text -----**<br> Part Number AUIRFS3306<br>Date Code<br>IR Logo T éaR YWWA Y= Year<br>WW= Work Week<br><br>XX XX<br>[|<br>Lot Code<br>**----- End of picture text -----**<br> 8 2017-10-11 AUIRFS3306 ~~__L_LL~~ ## ~~Cinfineon~~ ## **D[2] - Pak (TO-263AB) Tape & Reel Information** (Dimensions are shown in millimeters (inches)) **==> picture [386 x 164] intentionally omitted <==** **----- Start of picture text -----**<br> TRR<br>1.60 (.063)<br>1.50 (.059)<br>1.60 (.063)<br>4.10 (.161)<br>3.90 (.153) 1.50 (.059) 0.368 (.0145)<br>0.342 (.0135)<br>FEED DIRECTION 1.85 (.073) 11.60 (.457)<br>1.65 (.065) 11.40 (.449) 24.30 (.957)<br>15.42 (.609)<br>23.90 (.941)<br>15.22 (.601)<br>TRL<br>1.75 (.069)<br>10.90 (.429) 1.25 (.049)<br>10.70 (.421) 4.72 (.136)<br>16.10 (.634) 4.52 (.178)<br>15.90 (.626)<br>**----- End of picture text -----**<br> **==> picture [71 x 7] intentionally omitted <==** **----- Start of picture text -----**<br> FEED DIRECTION<br>**----- End of picture text -----**<br> **==> picture [376 x 188] intentionally omitted <==** **----- Start of picture text -----**<br> 13.50 (.532) 27.40 (1.079)<br>12.80 (.504) 23.90 (.941)<br>4<br>330.00 60.00 (2.362)<br>(14.173) MIN.<br> MAX.<br>30.40 (1.197)<br>NOTES : MAX.<br>1. COMFORMS TO EIA-418.<br>26.40 (1.039) 4<br>2. CONTROLLING DIMENSION: MILLIMETER. 24.40 (.961)<br>3. DIMENSION MEASURED @ HUB. 3<br>**----- End of picture text -----**<br> 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 9 2017-10-11 ## AUIRFS3306 ~~“e_»&»«=«=5=$FDEee°°»~~ **Qualification Information** |**Qualification Information**|**Qualification Information**||| |---|---|---|---| |**Qualification Level**||Automotive<br>(per AEC-Q101)|| |||Comments: This part number(s) passed Automotive qualification. Infineon’s<br>Industrial and Consumer qualification level is granted by extension of the higher<br>Automotive level.|| |**Moisture Sensitivity Level**||D2-Pak|MSL1| |**ESD**|Machine Model|Class M4 (+/- 800V)† <br>AEC-Q101-002|| ||Human Body Model|Class H2 (+/- 3000V)† <br>AEC-Q101-001|| ||Charged Device Model|Class C5 (+/- 2000V)† <br>AEC-Q101-005|| |**RoHS Compliant**||Yes|| - Highest passing voltage. |**Revision History**|**Revision History**|||| |---|---|---|---|---| |**Date**||||**Comments**| |10/11/2017|||Updated datasheet with corporate template|| ||||Corrected typo error on part marking on page 8.|Corrected typo error on part marking on page 8.| **Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2015 All Rights Reserved.** ## **IMPORTANT NOTICE** The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office (www.infineon.com). ## **WARNINGS** Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 10 2017-10-11
Updated at March 10, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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