AUIRFS3206
Power MOSFET, N Channel, 60 V, 120 A, 0.0024 ohm, TO-263AB, Surface Mount
- Manufacturer: INFINEON
- Product type: Single MOSFETs
- No. of Pins: 3Pins
- Channel Type: N Channel
- Power Dissipation: 300W
- Transistor Mounting: Surface Mount
- Transistor Polarity: N Channel
- Power Dissipation Pd: 300W
- Rds(on) Test Voltage: 10V
- On Resistance Rds(on): 0.0024ohm
- Transistor Case Style: TO-263AB
- Drain Source Voltage Vds: 60V
- Operating Temperature Max: 175°C
- Continuous Drain Current Id: 120A
- Drain Source On State Resistance: 0.0024ohm
- Gate Source Threshold Voltage Max: 2V
| Delivery and price | |
|---|---|
| Units per pack | 10 |
| Price | 1.59 € |
| Current stock | 10+ |
| Lead time | 30 days |
AUIRFS3206 AUIRFSL3206 ~~pO~~ **AUTOMOTIVE GRADE** ## ~~Cinfin eon~~ HEXFET[® ] Power MOSFET ## **Features** |**Features**<br>Advanced Process Technology<br>Ultra Low On-Resistance<br>Enhanced dV/dT and dI/dT capability<br>175°C Operating Temperature<br>Fast Switching<br>Repetitive Avalanche Allowed up to Tjmax|||**VDSS**<br>**60V**<br>**RDS(on) typ.**<br>**2.4m**<br>**max.**<br>**3.0m**<br>**ID (Silicon Limited)**<br>**210A**<br>**ID (Package Limited)**<br>**120A**<br>~~==~~|**VDSS**<br>**60V**<br>**RDS(on) typ.**<br>**2.4m**<br>**max.**<br>**3.0m**<br>**ID (Silicon Limited)**<br>**210A**<br>**ID (Package Limited)**<br>**120A**<br>~~==~~| |---|---|---|---|---| |Lead-Free, RoHS Compliant<br>Automotive Qualified *|||D|D| |**Description**<br>Specifically designed for Automotive applications, this HEXFET|Specifically designed for Automotive applications, this HEXFET®||S|S| |Power MOSFET utilizes the latest processing techniques to achieve|||G|GD| |extremely low on-resistance per silicon area. Additional features of|||D2Pak|TO-262| |this design are a 175°C junction operating temperature, fast<br>switching speed and improved repetitive avalanche rating . These|||AUIRFS3206<br>AUIRFSL3206|| |features combine to make this design an extremely efficient and<br>reliable device for use in Automotive applications and a wide variety<br>of other applications||**G**<br>**D**<br>**S**<br>Gate<br>Drain<br>Source<br>~~-——|~~||| |**Base part number**<br>**Package Type**<br>**Standard Pack**<br>**Form**||**Standard Pack**|**Quantity**<br>**Orderable Part Number**|| |AUIRFSL3206<br>TO-262<br>Tube|||50|AUIRFSL3206| |AUIRFS3206<br>D2-Pak<br>Tube<br>Tape and Reel Left|||50<br>800|AUIRFS3206<br>AUIRFS3206TRL| - Advanced Process Technology - Ultra Low On-Resistance - Enhanced dV/dT and dI/dT capability - 175°C Operating Temperature - Fast Switching - Repetitive Avalanche Allowed up to Tjmax - Lead-Free, RoHS Compliant - Automotive Qualified * ## **Description** Specifically designed for Automotive applications, this HEXFET[®] Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications ## **Absolute Maximum Ratings** Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified. |**Symbol**|**Parameter**|**Max.**|**Units**| |---|---|---|---| |ID@ TC= 25°C|Continuous Drain Current, VGS@ 10V (Silicon Limited)|210|A| |ID @TC= 100°C|Continuous Drain Current,VGS @10V(Silicon Limited)|150|| |ID@ TC= 25°C|Continuous Drain Current, VGS@ 10V (Package Limited)|120|| |IDM|Pulsed Drain Current|840|| |PD@TC= 25°C|Maximum Power Dissipation|300|W| ||Linear Derating Factor|2.0|W/°C| |VGS<br>~~—————~~|Gate-to-SourceVoltage<br>~~—————~~|± 20<br>~~—————~~|V<br>~~—————~~| |EAS<br>~~—————~~|Single Pulse Avalanche Energy (ThermallyLimited) <br>~~—————~~|170<br>~~—————~~|mJ<br>~~—————~~| |IAR<br>~~—————~~|Avalanche Current<br>~~—————~~|See Fig.14,15, 22a, 22b<br>~~—————~~|A<br>~~—————~~| |EAR<br>~~—————~~|Repetitive Avalanche Energy <br>~~—————~~||mJ<br>~~—————~~| |dv/dt<br>~~—————~~|Peak Diode Recovery <br>~~—————~~|5.0<br>~~—————~~|V/ns<br>~~—————~~| |TJ<br>TSTG<br>~~ee~~|Operating Junction and<br>Storage Temperature Range<br>~~ee~~|-55 to + 175<br>~~ee~~|°C<br>~~ee~~| |~~ee~~|SolderingTemperature,for 10 seconds(1.6mm from case)<br>~~ee~~|300<br>~~ee~~|| ~~Cinfineon~~ AUIRFS/SL3206 ~~__L_LL~~ |Qg<br>~~a~~<br>~~a~~|Total Gate Charge<br>~~ee~~<br>|–––<br>~~ee~~<br>~~ss~~<br>|120<br>~~ee~~<br>~~ss~~<br>|170<br>~~ee~~<br>|nC|ID= 75A<br>VDS= 30V<br>VGS= 10V| |---|---|---|---|---|---|---| |g<br>Qgs<br>~~a a~~<br>~~ee~~|Gate-to-Source Charge<br>~~a~~|–––<br>~~ss~~<br>~~a~~|29<br>~~ss~~<br>~~a~~|–––<br>~~a~~||| |gs<br>Qgd<br>~~a~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|Gate-to-Drain Charge<br>~~a~~<br>~~ee~~|–––<br>~~a~~<br>~~ee~~<br>~~es~~|35<br>~~a~~<br>~~ee~~<br>~~ee~~|–––<br>~~a~~<br>~~ee~~||| |gd<br>Qsync<br>~~a~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|Total Gate Charge Sync.(Qg - Qgd)<br>~~a~~<br>~~ee~~|–––<br>~~a~~<br>~~ee~~<br>~~es~~|85<br>~~a~~<br>~~ee~~<br>~~ee~~|–––<br>~~a~~<br>~~ee~~||| |td(on)<br>~~ee~~<br>~~ee~~<br>~~es~~|Turn-On Delay Time<br>~~ee~~<br>~~es~~|–––<br>~~ee~~<br>~~es~~<br>~~es~~|19<br>~~ee~~<br>~~ee~~<br>~~es~~|–––<br>~~ee~~<br>~~es~~|ns|VDD= 30V<br>ID= 75A<br>RG= 2.7<br>VGS= 10V| |d(on)<br>tr<br>~~ee~~<br>~~es~~<br>~~ee~~|RiseTime<br>~~es~~<br>|–––<br>~~es ~~<br>~~es~~<br>~~ee~~<br>|82<br> ~~ee~~<br>~~es~~<br>|–––<br>~~es~~<br>||| |td(off)<br>~~es~~<br>~~a ~~<br>~~ee~~|Turn-Off DelayTime<br>~~es~~<br> ~~ee~~<br>|–––<br>~~es~~<br>~~ee~~<br>~~ee~~<br>|55<br>~~es~~<br>~~ee~~<br>|–––<br>~~es~~<br>~~ee~~<br>||| |d(off)<br>tf<br>~~ee~~<br>~~es~~|Fall Time<br>~~a~~<br>|–––<br>~~ee~~<br>~~a~~<br>|83<br>~~a~~<br>|–––<br>~~a~~<br>||| |Ciss<br>~~ee~~<br>~~es~~<br>~~es~~<br>~~es~~|Input Capacitance<br>~~a~~<br>~~**e**e~~|–––<br>~~ee~~<br>~~a~~<br>~~e~~<br>~~Os~~|6540<br>~~a~~<br>~~e~~|–––<br>~~a~~<br>~~e~~|pF<br>~~Ge~~<br>~~cere~~|VGS= 0V<br>VDS= 50V<br>ƒ= 1.0MHz, See Fig. 5| |Coss<br><br>~~es~~<br>~~es~~<br>~~es~~|Output Capacitance<br>~~a~~<br>~~**e**e~~<br>~~n~~|–––<br>~~a~~<br>~~e~~<br>~~n~~<br>~~Os~~|720<br>~~a~~<br>~~e~~<br>~~n~~|–––<br>~~a~~<br>~~e~~<br>~~n~~||| |Crss<br><br>~~es~~<br>~~es~~<br>~~es~~<br>~~a~~|Reverse Transfer Capacitance<br>~~**e**e~~<br>~~n~~<br>~~nS~~<br>|–––<br>~~e~~<br>~~n~~<br>~~Os~~<br>~~nS~~<br>|360<br>~~e~~<br>~~n~~<br>~~nS~~<br>~~Ge~~<br>|–––<br>~~e~~<br>~~n~~<br>~~nS~~<br>~~Ge~~<br>||| |Coss eff.(ER)<br>~~es~~<br>~~es~~<br>~~a~~|Effective Output Capacitance (Energy Related)<br>~~nS~~<br>|–––<br>~~Os~~<br>~~nS~~<br><br>~~rs~~|1040<br>~~nS~~<br>~~Ge~~<br><br>~~rs~~|–––<br>~~nS~~<br>~~Ge~~<br><br>~~ce~~||VGS= 0V, VDS= 0V to 48V| |Coss eff.(TR)<br>~~es~~<br>~~a ~~|Effective Output Capacitance(Time Related)<br>~~nS~~<br> ~~rs~~|–––<br>~~nS~~<br>~~rs~~<br>~~rs~~|1230<br>~~nS~~<br>~~Ge~~<br>~~rs~~<br>~~rs~~|–––<br>~~nS~~<br>~~Ge~~<br>~~rs~~<br>~~ce~~||VGS= 0V,VDS= 0V to 48V| |**Diode Characteristics**<br>~~rs~~<br>~~cere~~<br>~~eses~~<br>~~ts Us Od~~||||||| |~~es~~<br>~~>~~|**Parameter **<br>~~es~~<br>~~et~~|**Min.**<br>~~es~~<br>~~ts Us~~<br>~~et~~|**Typ. M**<br>~~es~~<br>~~Us~~<br>~~et He~~|**. Max.**<br>~~es~~<br>~~Us Od~~<br>~~He~~|**Units**<br>~~es~~<br>~~Od~~<br>~~He~~|**Conditions**<br>~~es~~<br>~~He~~| |IS<br>~~es~~<br>~~>~~|Continuous Source Current<br>(Body Diode)<br>~~es~~<br>~~et~~|–––<br>~~es~~<br>~~ts Us~~<br>~~et~~|––– 210<br>~~es~~<br>~~Us~~<br>~~et He~~|––– 210<br>~~es~~<br>~~Us Od~~<br>~~He~~|A<br>~~es~~<br>~~Od~~<br>~~He~~<br>~~ss~~|MOSFET symbol<br>showing the<br>integral reverse<br>p-njunctiondiode.<br>~~es~~<br>~~He~~| |ISM<br>~~>~~<br>~~es~~|Pulsed Source Current<br>(BodyDiode)<br>~~et~~<br>~~rs~~|–––<br>~~et~~<br>~~ts~~|–––<br>~~et He~~<br>~~rs~~|840<br>~~He~~<br>~~ss~~||| |VSD<br>~~>~~<br>~~es~~|Diode Forward Voltage<br>~~et~~<br>~~rs~~|–––<br>~~et~~<br>~~ts~~|–––<br>~~et He~~<br>~~rs~~|1.3<br>~~He~~<br>~~ss~~|V<br>~~He~~<br>~~ss~~|TJ= 25°C,IS= 75A,VGS= 0V<br>~~He~~| |trr<br>~~es~~<br>~~ef~~|Reverse Recovery Time<br>~~rs ~~<br>~~ef~~<br>~~|~~|–––<br> ~~ts ~~<br>~~ef~~<br>~~|~~|33<br> ~~rs ~~<br>~~ef~~<br>|50<br> ~~ss~~<br>~~ef~~<br>|ns<br>~~ss~~<br>~~ef~~|TJ =25°CVDD= 51V<br>TJ =125°CIF= 75A,<br>TJ =25°Cdi/dt = 100A/µs<br>TJ =125°C <br>TJ= 25°C| |||–––<br>~~ef~~<br>~~|fT~~|37<br>~~ef~~<br>~~fT~~|56<br>~~ef~~<br>~~fT~~||| |Qrr<br>~~ef~~<br>~~EC~~<br>~~ee~~|Reverse Recovery Charge<br>~~ef~~<br>~~|~~<br>~~EC~~<br>~~|~~<br>|–––<br>~~ef~~<br>~~|fT~~<br>~~EC~~|41<br>~~ef~~<br>~~fT~~<br>~~EC~~|62<br>~~ef~~<br>~~fT~~<br>~~EC~~|nC<br>~~ef~~<br>~~EC~~<br>|| |||–––<br>~~EC~~<br>~~||~~<br>|53<br>~~EC~~<br>~~|~~<br>|80<br>~~EC~~<br>~~|~~<br>||| |IRRM<br>~~EC~~<br>~~ee~~<br>~~es~~|ReverseRecovery Current<br>~~EC~~<br>~~|~~<br>~~es~~<br>|–––<br>~~EC~~<br>~~||~~<br>~~es~~<br>~~es~~|2.1<br>~~EC~~<br>~~|~~<br>~~es~~<br>~~es~~|–––<br>~~EC~~<br>~~|~~<br>~~es~~|A<br>~~EC~~<br>~~es~~|| |ton<br>~~ee~~<br>~~es~~|Forward Turn-On Time<br><br><br>~~a~~|Intrinsic turn-on time is negligible(turn-on is dominated byLS+LD)<br>~~|~~<br><br>~~es~~||||| - Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 120A. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. - Repetitive rating; pulse width limited by max. junction temperature. - Limited by TJmax, starting TJ = 25°C, L = 0.023mH, RG = 25, IAS = 120A, VGS =10V. Part not recommended for use above this value. - ISD 75A, di/dt 360A/µs, VDD V(BR)DSS, TJ 175°C. - Pulse width 400µs; duty cycle 2%. - Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. - Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS. - When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994 - R is measured at TJ approximately 90°C. 2 2015-10-27 AUIRFS/SL3206 **==> picture [215 x 660] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>VGS<br>TOP 15V<br>10V<br>8.0V<br>6.0V<br>5.5V<br>5.0V<br>4.8V<br>BOTTOM 4.5V<br>100 zl<br>4.5V 60µs PULSE WIDTH<br>Tj = 25°C<br>10 sil<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig. 1 Typical Output Characteristics<br>1000<br>100 T = 175°C<br>CT J UAE<br>10<br>fyieee TJ = 25°C<br>1<br>ffi<br>VDS = 25V<br> 60µs PULSE WIDTH<br>ff<br>0.1<br>2.0 3.0 4.0 5.0 6.0 7.0 8.0<br>VGS, Gate-to-Source Voltage (V)<br>Fig. 3 Typical Transfer Characteristics<br>12000<br>VGS = 0V, f = 1 MHZ<br>Ciss = Cgs + Cgd, Cds SHORTED<br>10000 Crss = Cgd<br>Coss = Cds + Cgd<br>8000<br>Cocca Ciss<br>6000 THEA<br>4000 Cn<br>2000 ma Coss<br>Crss<br>0 SHmailE<br>1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>)<br>ID, Drain-to-Source Current<br>C, Capacitance (pF)<br>**----- End of picture text -----**<br> **Fig 5.** Typical Capacitance vs. Drain-to-Source Voltage **==> picture [217 x 662] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>VGS<br>TOP 15V<br>10V<br>8.0V<br>6.0V<br>5.5V<br>5.0V<br>4.8V<br>BOTTOM 4.5V<br>100 (zl<br>4.5V<br> 60µs PULSE WIDTH<br>Tj = 175°C<br>Al<br>10<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig. 2 Typical Output Characteristics<br>2.5<br>ID = 75A<br>VGS = 10V<br>2.0<br>UL<br>1.5<br>a<br>1.0<br>LET<br>0.5 HOLL<br>-60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>TJ , Junction Temperature (°C)<br>Fig. 4 Normalized On-Resistance vs. Temperature<br>20<br>ID= 75A<br>VDS= 48V<br>16 VDS= 30V<br>VDS= 12V<br>Fb,<br>12<br>Se<br>8<br>be<br>4 any An<br>ayAnni4a<br>0<br>0 40 80 120 160 200<br> QG Total Gate Charge (nC)<br>ID, Drain-to-Source Current (A)<br>VGS, Gate-to-Source Voltage (V)<br>RDS(on) , Drain-to-Source On Resistance (Normalized)<br>**----- End of picture text -----**<br> **Fig. 4** Normalized On-Resistance vs. Temperature **Fig 6.** Typical Gate Charge vs. Gate-to-Source Voltage 3 2015-10-27 AUIRFS/SL3206 **==> picture [208 x 436] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>100 T J = 175°C<br>rr<br>10 (annie T J = 25°C<br>1 Abit<br>VGS = 0V<br>0.1<br>0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0<br>RRGRGGES<br>VSD, Source-to-Drain Voltage (V)<br>Fig. 7 Typical Source-to-Drain Diode<br>240<br>200 Limited By Package<br>160 TTT<br>et<br>120<br>80<br>CoCP NG<br>40 Heer<br>0<br>pF tt il<br>25 50 75 100 125 150 175<br> TC , Case Temperature (°C)<br>ISD, Reverse Drain Current (A)<br>ID, Drain Current (A)<br>**----- End of picture text -----**<br> **Fig 9.** Maximum Drain Current vs. Case Temperature **==> picture [208 x 197] intentionally omitted <==** **----- Start of picture text -----**<br> 2.0<br>1.5<br>1.0 iLEEnEVA<br>0.5<br>ED 2ZEn<br>0.0 BZAnEn<br>0 10 20 30 40 50 60<br>VDS, Drain-to-Source Voltage (V)<br>Energy (µJ)<br>**----- End of picture text -----**<br> **Fig 11.** Typical COSS Stored Energy **==> picture [215 x 669] intentionally omitted <==** **----- Start of picture text -----**<br> 10000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br>1000<br>sii<br>100 1 ms ec 1 00µsec<br>ee<br>10 m sec<br>10<br>AN<br>1 Tc = 25°C<br>Tj = 175°C DC<br>Single Pulse<br>0.1<br>0.1 1 10 a 100<br>VDS, Drain-toSource Voltage (V)<br>Fig 8. Maximum Safe Operating Area<br>80<br>ID = 5mA<br>75<br>TIE<br>70<br>UPA<br>65<br>CPE<br>60<br>eT<br>55<br>-60 EEE -40 -20 0 20 40 60 80 100 EEE 120 140 160 180<br>TJ , Junction Temperature (°C)<br>Fig 10. Drain-to-Source Breakdown Voltage<br>800<br> ID<br>TOP 21A<br> 33A<br>600 BOTTOM 120A<br>400 NeAL<br>200<br>NAGHEE<br>CSS<br>0<br>25 50 75 100 125 150 175<br>Starting TJ, Junction Temperature (°C)<br>ID, Drain-to-Source Current (A)<br>EAS, Single Pulse Avalanche Energy (mJ)<br>V(BR)DSS , Drain-to-Source Breakdown Voltage<br>**----- End of picture text -----**<br> **Fig 8.** Maximum Safe Operating Area **Fig 10.** Drain-to-Source Breakdown Voltage **Fig 12.** Maximum Avalanche Energy vs. Drain Current 4 2015-10-27 ~~E00~~ ~~Cinfineon~~ AUIRFS/SL3206 ~~__L_LL~~ **==> picture [496 x 675] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>TT D = 0.50 oo<br>0.1 0.20<br>0.10<br>0.05<br>0.01 = Beet 0.02 0.01 i So— = J J R1 R1 R2 R2 R3R3 a C Ri (°C/W) 0.106416 th ee I (sec)0.0001 |<br>1 1 2 2 3 3 0.201878 0.0012621<br>SINGLE PULSE Ci= Ci= i Ri iRi 0.190923 0.011922<br>0.001 ee ( THERMAL RESPONSE ) zal a<br>Notes:<br>1. Duty Factor D = t1/t2<br>2. Peak Tj = P dm x Zthjc + Tc<br>BET ee te<br>0.0001<br>1E-006 1E-005 tH 0.0001 et 0.001 0.01 0.1<br>t1 , Rectangular Pulse Duration (sec)<br>Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case<br>1000<br>Duty Cycle = Single Pulse Allowed avalanche Current vs avalanche<br>pulsewidth, tav, assuming Tj = 150°C and<br>100 Tstart =25°C (Single Pulse)<br>a 0.01 |<br>mai 0.05 U eal<br>10 SSS) 0.10<br>PT AE Ee LH<br>Allowed avalanche Current vs avalanche<br>pulsewidth, tav, assuming j = 25°C and<br>Tstart = 150°C.<br>1 e en ael<br>1.0E-06 1.0E-05 1.0E-04 ||P 1.0E-03 1.0E-02 1.0E-01<br>tav (sec)<br>Fig 14. Avalanche Current vs. Pulse width<br>200 Notes on Repetitive Avalanche Curves , Figures 14, 15:<br>TOP Single Pulse (For further info, see AN-1005 at www.infineon.com)<br>BOTTOM 1% Duty Cycle 1. Avalanche failures assumption:<br>160 I D = 120A Purely a thermal phenomenon and failure occurs at a temperature far in<br>excess of Tjmax. This is validated for every part type.<br>2. Safe operation in Avalanche is allowed as long as Tjmaxjmax is not exceeded.<br>120 NG 3. Equation below based on circuit and waveforms shown in Figures 18a, 18b.<br>weoor 4. PD (ave) = Average power dissipation per single avalanche pulse. D (ave) = Average power dissipation per single avalanche pulse. = Average power dissipation per single avalanche pulse.<br>5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase<br>80 during avalanche).<br>PRACT 6. Iav = Allowable avalanche current.<br>7. T = Allowable rise in junction temperature, not to exceedT = Allowable rise in junction temperature, not to exceed = Allowable rise in junction temperature, not to exceedAllowable rise in junction temperature, not to exceed Tjmax jmax (assumed as<br>40 25°C in Figure 13, 14).<br>USSU tav = Average time in avalanche.<br>LETT NSN D = Duty cycle in avalanche = tav ·f<br>0<br>ZthJC(D, tav) = Transient thermal resistance, see Figures 13)<br>25 50 75 100 125 150 175<br>Starting TJ , Junction Temperature (°C) PD (ave) = 1/2 ( 1.3·BV·Iav) = D (ave) = 1/2 ( 1.3·BV·Iav) = = 1/2 ( 1.3·BV·Iav) = av) = ) = T/ ZthJCthJC<br>EAR , Avalanche Energy (mJ)<br>Thermal Response ( Z thJC )<br>Avalanche Current (A)<br>**----- End of picture text -----**<br> - Purely a thermal phenomenon and failure occurs at a temperature far in 2. Safe operation in Avalanche is allowed as long as Tjmaxjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 18a, 18b. 4. PD (ave) = Average power dissipation per single avalanche pulse. D (ave) = Average power dissipation per single avalanche pulse. = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 7. T = Allowable rise in junction temperature, not to exceedT = Allowable rise in junction temperature, not to exceed = Allowable rise in junction temperature, not to exceedAllowable rise in junction temperature, not to exceed Tjmax jmax (assumed as 25°C in Figure 13, 14). **PD (ave) = 1/2 ( 1.3·BV·Iav) = D (ave) = 1/2 ( 1.3·BV·Iav) = = 1/2 ( 1.3·BV·Iav) = av) = ) =** **T/ ZthJCthJC Iav = 2** **T/ [1.3·BV·Zth]** **EAS (AR) = PD (ave)·tav** **Fig 15.** Maximum Avalanche Energy vs. Temperature 2015-10-27 5 AUIRFS/SL3206 ~~la~~ ## ~~Cinfin eon~~ **==> picture [212 x 196] intentionally omitted <==** **----- Start of picture text -----**<br> 4.5<br>ID = 1.0A<br>4.0 I D = 1.0mA<br>tte ID = 250µA |<br>3.5 CREEL ID = 150µA<br>3.0 ~<br>2.5<br>2.0 HP SS&C<br>RNS<br>1.5<br>PCEEECE SSS<br>1.0 PLE EE LL EEN<br>-75 -50 -25 0 25 50 75 100 125 150 175<br>TJ , Temperature ( °C )<br>VGS(th) Gate threshold Voltage (V)<br>**----- End of picture text -----**<br> **Fig 16.** Threshold Voltage vs. Temperature **==> picture [207 x 196] intentionally omitted <==** **----- Start of picture text -----**<br> 18<br>16 TT LLLLLLL<br>14<br>AS<br>12 CELE eae<br>10 Eaaneuese<br>8<br>PoP eer<br>6<br>Pt Leer IF = 45A<br>4 e280 V R = 51V<br>2 T J = 125°C<br>TJ = 25°C<br>0 CaanPELE] |<br>100 200 300 400 500 600 700 800 900 1000<br>dif / dt - (A / µs)<br>IRRM - (A)<br>**----- End of picture text -----**<br> **==> picture [207 x 431] intentionally omitted <==** **----- Start of picture text -----**<br> 18<br>16<br>14<br>PEER<br>12 SeeeeeeeZ<br>108 x<br>6<br>COREE IF = 30A<br>4 Tri V R = 51V<br>2 T J = 125°C<br>TJ = 25°C<br>Cara<br>0<br>(TTT TY<br>100 200 300 400 500 600 700 800 900 1000<br>dif / dt - (A / µs)<br>Fig. 17 - Typical Recovery Current vs. diff/dt<br>350<br>300<br>250<br>,<br>200150 SaaSCO eae<br>100 Tee IF = 30A<br>ea VR = 51V<br>50 T J = 125°C<br>TJ = 25°C<br>ary.enna |<br>0<br>100 200 300 400 500 600 700 800 900 1000<br>dif / dt - (A / µs)<br>IRRM - (A)<br>QRR - (nC)<br>**----- End of picture text -----**<br> **Fig. 17** - Typical Recovery Current vs. diff/dt **Fig. 18** - Typical Recovery Current vs. dif/dt **Fig. 19** - Typical Stored Charge vs. dif/dt **==> picture [207 x 196] intentionally omitted <==** **----- Start of picture text -----**<br> 350<br>300 PPLEE<br>250<br>pt ttttde<br>200 EERE<br>150 PL LLL LET<br>100 [|eer IF = 45A td<br>VR = 51V<br>50 T J = 125°C<br>TJ = 25°C<br>pe.<br>0 FE td<br>100 200 300 400 500 600 700 800 900 1000<br>dif / dt - (A / µs)<br>QRR - (nC)<br>**----- End of picture text -----**<br> **Fig. 20** - Typical Stored Charge vs. dif/dt 6 2015-10-27 ~~Cinfir~~ AUIRFS/SL3206 ~~_~~ **Fig 21.** Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs **==> picture [175 x 108] intentionally omitted <==** **----- Start of picture text -----**<br> 15V<br>L DRIVER<br>VDS<br>R G D.U.T +<br>- [V][DD]<br>20V JL IAS<br>ae tp Y 0.01<br>**----- End of picture text -----**<br> **Fig 22a.** Unclamped Inductive Test Circuit **==> picture [112 x 26] intentionally omitted <==** **----- Start of picture text -----**<br> V(BR)DSS<br>tp ><br>**----- End of picture text -----**<br> **==> picture [18 x 9] intentionally omitted <==** **----- Start of picture text -----**<br> IAS<br>**----- End of picture text -----**<br> **Fig 22b.** Unclamped Inductive Waveforms **Fig 23a.** Switching Time Test Circuit **Fig 23b.** Switching Time Waveforms **==> picture [188 x 128] intentionally omitted <==** **----- Start of picture text -----**<br> Vds Hi Id<br>Vgs<br>I<br>|<br>Vgs(th) !! ['] t<br>i t<br>A :<br>Qgs1 Qgs2 Qgd Qgodr<br>**----- End of picture text -----**<br> **Fig 24a.** Gate Charge Test Circuit **Fig 24b.** Gate Charge Waveform 2015-10-27 7 AUIRFS/SL3206 ~~__L_LL~~ ## ~~Cinfin eon~~ **D[2] Pak (TO-263AB) Package Outline** (Dimensions are shown in millimeters (inches)) ## **D[2] Pak (TO-263AB) Part Marking Information** **==> picture [331 x 148] intentionally omitted <==** **----- Start of picture text -----**<br> Part Number AUFS3206<br>Date Code<br>IR Logo T é4R YWWA Y= Year<br>WW= Work Week<br><br>XX XX<br>[|<br>Lot Code<br>**----- End of picture text -----**<br> Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 8 2015-10-27 AUIRFS/SL3206 ~~__L_LL~~ ## ~~Cinfineon~~ **TO-262 Package Outline** (Dimensions are shown in millimeters (inches) ## **TO-262 Part Marking Information** **==> picture [331 x 148] intentionally omitted <==** **----- Start of picture text -----**<br> Part Number AUFSL3206<br>Date Code<br>IR Logo T é4R YWWA Y= Year<br>WW= Work Week<br><br>XX XX<br>[|<br>Lot Code<br>**----- End of picture text -----**<br> Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 9 2015-10-27 AUIRFS/SL3206 ~~__L_LL~~ ## ~~Cinfineon~~ ## **D[2] Pak (TO-263AB) Tape & Reel Information** (Dimensions are shown in millimeters (inches)) **==> picture [386 x 164] intentionally omitted <==** **----- Start of picture text -----**<br> TRR<br>1.60 (.063)<br>1.50 (.059)<br>1.60 (.063)<br>4.10 (.161)<br>3.90 (.153) 1.50 (.059) 0.368 (.0145)<br>0.342 (.0135)<br>FEED DIRECTION 1.85 (.073) 11.60 (.457)<br>1.65 (.065) 11.40 (.449) 24.30 (.957)<br>15.42 (.609)<br>23.90 (.941)<br>15.22 (.601)<br>TRL<br>1.75 (.069)<br>10.90 (.429) 1.25 (.049)<br>10.70 (.421) 4.72 (.136)<br>16.10 (.634) 4.52 (.178)<br>15.90 (.626)<br>**----- End of picture text -----**<br> **==> picture [71 x 7] intentionally omitted <==** **----- Start of picture text -----**<br> FEED DIRECTION<br>**----- End of picture text -----**<br> **==> picture [376 x 188] intentionally omitted <==** **----- Start of picture text -----**<br> 13.50 (.532) 27.40 (1.079)<br>12.80 (.504) 23.90 (.941)<br>4<br>330.00 60.00 (2.362)<br>(14.173) MIN.<br> MAX.<br>30.40 (1.197)<br>NOTES : MAX.<br>1. COMFORMS TO EIA-418.<br>26.40 (1.039) 4<br>2. CONTROLLING DIMENSION: MILLIMETER. 24.40 (.961)<br>3. DIMENSION MEASURED @ HUB. 3<br>**----- End of picture text -----**<br> 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 10 2015-10-27 ## AUIRFS/SL3206 ~~“e_»&»«=«=5=$FDEee°°»~~ **Qualification Information** |**Qualification Information**|**Qualification Information**||| |---|---|---|---| |**Qualification Level**||Automotive<br>(per AEC-Q101)|| |||Comments: This part number(s) passed Automotive qualification. Infineon’s<br>Industrial and Consumer qualification level is granted by extension of the higher<br>Automotive level.|| |**Moisture Sensitivity Level**||D2-Pak|MSL1| |||TO-262|| |**ESD**|Machine Model|Class M4 (+/- 800V)† <br>AEC-Q101-002|| ||Human Body Model|Class H2 (+/- 4000V)† <br>AEC-Q101-001|| ||Charged Device Model|Class C5 (+/- 2000V)† <br>AEC-Q101-005|| |**RoHS Compliant**||Yes|| - Highest passing voltage. ## **Revision History** |**Date**|||**Comments**| |---|---|---|---| |10/27/2015||Updated datasheet with corporate template|| |||Corrected orderingtable onpage 1.|| **Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2015 All Rights Reserved.** ## **IMPORTANT NOTICE** The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office (www.infineon.com). ## **WARNINGS** Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not ~~_~~ be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 11 2015-10-27
Updated at February 9, 2023
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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