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AUIRFR8405
Power MOSFET, N Channel, 40 V, 100 A, 1980 µohm, TO-252AA, Surface Mount
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- Manufacturer: INFINEON
- Product type: Single MOSFETs
- Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.00165ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Pow
- MSL: -
- No. of Pins: 3Pins
- Channel Type: N Channel
- Product Range: -
- Qualification: AEC-Q101
- Power Dissipation: 163W
- Transistor Mounting: Surface Mount
- Rds(on) Test Voltage: 10V
- Transistor Case Style: TO-252AA
- Drain Source Voltage Vds: 40V
- Operating Temperature Max: 175°C
- Continuous Drain Current Id: 100A
- Drain Source On State Resistance: 1980µohm
- Gate Source Threshold Voltage Max: 3V
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.608 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## **Features**
Advanced Process Technology New Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified *
## **Description**
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and wide variety of other applications.
## **Applications**
Electric Power Steering (EPS) Battery Switch Start/Stop Micro Hybrid Heavy Loads DC-DC Converter
|HEXFET<br>Power MOSFET<br>**VDSS**<br>**40V**<br>**RDS(on) typ.**<br>**1.65m**Ω<br>®|HEXFET<br>Power MOSFET<br>**VDSS**<br>**40V**<br>**RDS(on) typ.**<br>**1.65m**Ω<br>®|HEXFET<br>Power MOSFET<br>**VDSS**<br>**40V**<br>**RDS(on) typ.**<br>**1.65m**Ω<br>®|
|---|---|---|
|**max.**|**1.98m**Ω||
|**ID (Silicon Limited)**|**211A**||
|**ID (Package Limited)**|**100A**||
|||D|||||D<br>eS||
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|G|||||a|||S<br>D<br>G<br>‘|
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|||S|||AUIRFR8405||AUIRFU8405||
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|**G**|||||**D**|||**S**|
|Gate|||||Drain||Source||
|**Base part number**|**Package Type**|**Standard Pack**|**Standard Pack**|**Complete Part Number**|
|---|---|---|---|---|
|||**Form**|**Quantity**||
|AUIRFR8405|DPak|Tube|**Quantity**<br>75|AUIRFR8405|
|||Tape and Reel|2000|AUIRFR8405TR|
|||Tape and Reel<br>Tape and Reel Left|3000|AUIRFR8405TRL|
|||Tape and Reel Left<br>Tape and Reel Right|3000|AUIRFR8405TRR|
|AUIRFU8405|IPak|Tape and Reel Right<br>Tube|75|AUIRFU8405|
## **Absolute Maximum Ratings**
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
|conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.perature (TA) is 25°C, unless otherwise specified.erature (TA) is 25°C, unless otherwise specified.(TA) is 25°C, unless otherwise specified.TA) is 25°C, unless otherwise specified.A) is 25°C, unless otherwise specified.) is 25°C, unless otherwise specified.is 25°C, unless otherwise specified.pecified.ecified.||
|---|---|
|**Symbol**<br>**Parameter**<br>**Units**<br>**Max.**||
|ID@ TC= 25°C<br>Continuous Drain Current,VGS@ 10V(Silicon Limited)<br>211<br>~~sO~~||
|ID@ TC= 100°C<br>ID@ TC= 25°C<br>Continuous Drain Current,VGS@ 10V(Package Limited)<br>IDM<br>Pulsed Drain Current<br>PD@TC= 25°C<br>Maximum Power Dissipation<br>W<br>Continuous Drain Current,VGS@ 10V(Silicon Limited)<br>163<br>A<br>150<br>804<br>100<br>~~a GO~~<br>~~OO~~<br>~~ee~~<br>~~GO~~||
|Linear DeratingFactor<br>W/°C<br>1.1<br>~~eG~~||
|VGS<br>Gate-to-Source Voltage<br>V<br>TJ<br>Operating Junction and<br>TSTG<br>Storage Temperature Range<br>SolderingTemperature,for 10 seconds(1.6mm from case)<br>°C<br>300<br>-55 to + 175<br>± 20<br>~~nO~~<br>~~————~~<br>~~Ee~~||
|**Avalanche Characteristics**||
|EAS (Thermally limited)<br>Single Pulse Avalanche Energy<br>EAS (tested)<br>Single Pulse Avalanche EnergyTested Value<br>IAR<br>Avalanche Current<br>A<br>EAR<br>Repetitive Avalanche Energy<br>mJ<br>**Thermal Resistance**<br>mJ<br>208<br>See Fig. 14, 15, 24a, 24b<br>256<br>®<br>~~ReTO~~<br>~~a|~~|~~|~~|
|**Symbol**<br>**Parameter**<br>**Typ.**<br>**Max.**<br>**Units**||
|RθJC<br>Junction-to-Case<br>–––<br>0.92<br>~~a~~<br>~~©~~||
|RθJA<br>Junction-to-Ambient(PCB Mount)<br>–––<br>50<br>RθJA<br>Junction-to-Ambient<br>–––<br>110<br>°C/W<br>~~>~~<br>~~Re~~||
HEXFET[®] is a registered trademark of International Rectifier.
***** Qualification standards can be found at http://www.irf.com/
**Static @ TJ = 25°C (unless otherwise specified)**
|**Static @ TJ = 25°C (unless otherwise specified)J = 25°C (unless otherwise specified) = 25°C (unless otherwise specified)**|**Static @ TJ = 25°C (unless otherwise specified)J = 25°C (unless otherwise specified) = 25°C (unless otherwise specified)(unless otherwise specified)unless otherwise specified)pecified)ecified))**||
|---|---|---|
|**Symbol**|**Parameter**<br>**Min. Typ. Max. Units**<br>**Conditions**||
|V(BR)DSS<br>ΔV(BR)DSS/ΔTJ|Drain-to-Source Breakdown Voltage<br>40<br>–––<br>–––<br>V<br>Breakdown Voltage Temp. Coefficient<br>–––<br>0.03<br>–––<br>V/°C<br>VGS= 0V,ID= 250μA<br>Reference to 25°C,ID= 5mA<br>~~pe~~<br>~~ee~~||
|RDS(on)|Static Drain-to-Source On-Resistance<br>–––<br>1.65<br>1.98<br>mΩ<br>VGS= 10V,ID= 90A**<br>~~pe~~||
|VGS(th)|Gate Threshold Voltage<br>2.2<br>3.0<br>3.9<br>V<br>VDS= VGS,ID= 100μA<br>~~QeGC~~||
|IDSS<br>IGSS<br>RG<br>**Dynamic @ T**<br>**Symbol**<br>gfs<br>Qg<br>Qgs<br>Qgd|Drain-to-Source Leakage Current<br>–––<br>–––<br>1.0<br>–––<br>–––<br>150<br>Gate-to-Source Forward Leakage<br>–––<br>–––<br>100<br>Gate-to-Source Reverse Leakage<br>–––<br>–––<br>-100<br>Internal Gate Resistance<br>–––<br>2.3<br>–––<br>Ω<br>**namic @ TJ = 25°C(unless otherwise specified)**<br>**Parameter**<br>**Min. Typ. Max. Units**<br>Forward Transconductance<br>294<br>–––<br>–––<br>S<br>Total Gate Charge<br>–––<br>103<br>155<br>Gate-to-Source Charge<br>–––<br>26<br>–––<br>Gate-to-Drain("Miller")Charge<br>–––<br>38<br>–––<br>μA<br>nA<br>nC<br>**Conditions**<br>VDS= 10V,ID= 90A**<br>ID= 90A **<br>VGS= 20V<br>VGS= -20V<br>VDS= 40V,VGS= 0V,TJ= 125°C<br>VDS=20V<br>VGS= 10V<br>VDS= 40V,VGS= 0V<br>~~Ce~~<br>~~|~~<br>~~|~~<br>~~es~~<br>~~ee~~<br>~~GO~~<br>~~PeRs~~<br>~~pe~~<br>~~aaes~~||
|Qsync<br>td(on)|Total Gate Charge Sync.(Qg- Qgd)<br>–––<br>65<br>–––<br>Turn-On DelayTime<br>–––<br>12<br>–––<br>VDD= 26V<br>ID= 90A **,VDS=0V,VGS= 10V<br>~~es~~<br>~~a~~||
|tr<br>td(off)|Rise Time<br>–––<br>80<br>–––<br>Turn-Off DelayTime<br>–––<br>51<br>–––<br>ns<br>ID= 90A**<br>RG= 2.7Ω<br>~~es~~<br>~~es~~||
|tf<br>Ciss<br>Coss<br>Crss<br>Cosseff.(ER)<br>Cosseff.(TR)|Fall Time<br>–––<br>51<br>–––<br>Input Capacitance<br>–––<br>5171<br>–––<br>Output Capacitance<br>–––<br>770<br>–––<br>Reverse Transfer Capacitance<br>–––<br>523<br>–––<br>Effective Output Capacitance(EnergyRelated)<br>–––<br>939<br>–––<br>Effective Output Capacitance(Time Related)<br>–––<br>1054<br>–––<br>pF<br>VGS= 10V<br>VGS= 0V<br>VDS= 25V<br>ƒ= 1.0 MHz,See Fig. 5<br>VGS= 0V,VDS= 0V to 32V<br>,See Fig. 11<br>VGS= 0V,VDS= 0V to 32V<br>~~a~~<br>~~aaee~~<br>~~ee~~<br>~~®~~<br>~~a~~<br>~~®~~||
|**Diode Characteristics**|||
|**Symbol**|**Parameter**<br>**Min. Typ. Max. Units**<br>**Conditions**||
|IS|Continuous Source Current<br>–––<br>–––<br>211<br>MOSFET symbol|D|
|ISM|G<br>(Body Diode)<br>Pulsed Source Current<br>(Body Diode)<br>A<br>–––<br>–––<br>804<br>integral reverse<br>p-n junction diode.<br>showing the<br>~~ee~~|S|
|VSD|Diode Forward Voltage<br>–––<br>0.9<br>1.3<br>V<br>TJ= 25°C,IS= 90A**�,VGS= 0V<br>~~pe~~||
|dv/dt<br>trr<br>Qrr<br>IRRM|Peak Diode Recovery<br>–––<br>2.1<br>–––<br>V/ns<br>Reverse Recovery Time<br>–––<br>28<br>–––<br>TJ= 25°C<br>VR= 34V,<br>–––<br>29<br>–––<br>TJ= 125°C<br>IF= 90A**<br>Reverse Recovery Charge<br>–––<br>19<br>–––<br>TJ= 25°C<br>di/dt = 100A/μs<br>–––<br>20<br>–––<br>TJ= 125°C<br>Reverse RecoveryCurrent<br>–––<br>1.1<br>–––<br>A<br>TJ= 25°C<br>ns<br>nC<br>TJ= 175°C,IS= 90A**,VDS= 40V<br>~~PO~~<br>~~ee~~<br>~~ee~~<br>~~|tT~~<br>~~**e**ee~~<br>~~a~~<br>~~|tT~~<br>~~s~~||
Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 100A by source bonding technology . Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements.
Repetitive rating; pulse width limited by max. junction temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.051mH, RG = 50 Ω , IAS = 90A, VGS =10V. Part not recommended for use above this value.
ISD ≤ 90A, di/dt ≤ 1304A/μs, VDD ≤ V(BR)DSS, TJ ≤ 175°C. Pulse width ≤ 400μs; duty cycle ≤ 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994.
θ
All AC and DC test condition based on old Package limitation current = 90A.
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1000 1000<br>VGS VGS<br>TOP 15V TOP 15V<br>aa Za 10V | pi fe 10V<br>8.0V 8.0V<br>wy mei 7.0V | ee Zee 7.0V |<br>6.0V 6.0V<br>100 fo 5.5V | We 5.5V<br>(fi 5.0V many Z000 5.0V |<br>BOTTOM 4.8V BOTTOM 4.8V<br>100<br>aea | 4.8V eee Ylayy //AB 4.8V<br>> Ze eee<br>10 yo) .0' er eee<br>Seti masts eect Yo<br>≤ 60μs PULSE WIDTH ≤ 60μs PULSE WIDTH<br>1 EETDo Tj = 25°C uC 10 nin Tj = 175°C |<br>0.1 1 10 100 0.1 1 10 100<br>sii aie: OTH<br>VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)<br>Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics<br>1000 2.0<br>ID = 90A<br>VGS = 10V<br>T = 175°C<br>J<br>100 ee(4a 1.6<br>T = 25°C<br>10 SS J 1.2 | | LA | ff<br>1 | if f | | 0.8 Z|<br>SS|) ae,eS =e VDS = 10V i a~| | | [| | |<br>a ae | ≤ 60μs PULSE WIDTH<br>0.1 fp ot 0.4 Pt tt |<br>2 3 4 5 6 7 8 -60 -20 20 60 100 140 180<br>TJ , Junction Temperature (°C)<br>VGS, Gate-to-Source Voltage (V)<br>Fig 4. Normalized On-Resistance vs. Temperature<br>Fig 3. Typical Transfer Characteristics<br>100000 14.0<br>VGS = 0V, f = 1 MHZGS = 0V, f = 1 MHZ = 0V, f = 1 MHZ<br>Ciss = Ciss = C = C gs + Cgd, C+ Cgd, Cgd, C, C ds SHORTEDSHORTED ID = 90A<br>=alal C Crss oss rss oss oss = C = Cds gd + Cgdds gd + Cgdgd + Cgd+ Cgdgd 12.0 PtPF VVDS= 32V= 20V NIAyTt<br>10.0 DS<br>10000<br>| Cississ TT) SST<br>i|SS|SSSS ee C oss ee ee ee 8.06.0 Pf | | Yi | |<br>eS TE /<br>C<br>1000 rss<br>CETTE CT I<br>PEEaa |ESSE|HHESSE|HH|HHHH 4.02.0 PA |} | et |<br>100 eeUaUa ee eel 0.0 Yi} tl) eid<br>0.1 1 10 100 0 20 40 60 80 100 120 140<br>VDS, Drain-to-Source Voltage (V) QG, Total Gate Charge (nC)<br>VGS, Gate-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A)<br>RDS(on) , Drain-to-Source On Resistance (Normalized)<br>**----- End of picture text -----**<br>
**Fig 4.** Normalized On-Resistance vs. Temperature
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100000<br>VGS = 0V, f = 1 MHZGS = 0V, f = 1 MHZ = 0V, f = 1 MHZ<br>Ciss = Ciss = C = C gs + Cgd, C+ Cgd, Cgd, C, C ds SHORTEDSHORTED<br>C = C<br>Crss oss rss oss oss = Cds gd + Cgdds gd + Cgdgd + Cgd+ Cgdgd<br>=alal<br>10000<br>| Cississ<br>i|SS|SSSS ee C ee ee ee<br>oss<br>eS TE<br>C<br>1000 rss<br>CETTE CT<br>PEEaa |ESSE|HHESSE|HH|HHHH<br>100 eeUaUa ee eel<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>C, Capacitance (pF)<br>**----- End of picture text -----**<br>
**Fig 5.** Typical Capacitance vs. Drain-to-Source Voltage
**Fig 6.** Typical Gate Charge vs. Gate-to-Source Voltage
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1000<br>T J = 175°C<br>100<br>TJ = 25°C<br>10<br>a<br>1<br>V GS = 0V<br>0.1 i ee<br>0.2 0.6 1.0 1.4 1.8<br>VSD, Source-to-Drain Voltage (V)<br>Fig 7. Typical Source-Drain Diode<br>Forward Voltage<br>240<br>210 Limited By Package<br>180 aMeE) |<br>150 i eee<br>120 P| AL tN<br>90 eee<br>60 P| | | ft NG<br>30 | | | | | LA<br>0 Ft | ft tt<br>25 50 75 100 125 150 175<br> TC , Case Temperature (°C)<br>Fig 9. Maximum Drain Current vs.<br>Case Temperature<br>0.8<br>0.7 Pt Tey<br>0.6<br>SaaRRR8/,<br>0.5<br>SH<br>0.4 PEEP<br>0.3<br>0.2 PTT |<br>0.1 | | | EESocenn YLPe]<br>0.0<br>-5 0 5 10 15 20 25 30 35 40 45<br>VDS, Drain-to-Source Voltage (V)<br>Energy (μJ)<br>ID, Drain Current (A)<br>ISD, Reverse Drain Current (A)<br>**----- End of picture text -----**<br>
**Fig 11.** Typical COSS Stored Energy
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10000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br>1000<br>100μsec<br>100<br>1msec<br>Limited by Package<br>10<br>ee<br>ens 10msec ee oe<br>1 Tc = 25°C<br>DC<br>Tj = 175°C<br>Single Pulse<br>0.1 | Te<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 8. Maximum Safe Operating Area<br>48<br>Id = 5.0mA<br>4746 Pp P|cernYt<br>45 | | | Ye [<br>4443424140 iA||7|{|[xYl|||A[||ft| |][|||ft ||ff[|[||<br>-60 -20 20 60 100 140 180<br>TJ , Temperature ( °C )<br>Fig 10. Drain-to-Source Breakdown Voltage<br>900<br>ID<br>800<br>Gann TOP 18A<br>700 37A<br>BOTTOM 90A<br>Ne<br>600<br>CER<br>500<br>S<br>400<br>300<br>SNSEPRLCEEE<br>200<br>100 P TEASANTNOEN TTL<br>0 Coe ESSEET<br>25 50 75 100 125 150 175<br>Starting TJ , Junction Temperature (°C)<br>EAS , Single Pulse Avalanche Energy (mJ)<br>ID, Drain-to-Source Current (A)<br>V(BR)DSS, Drain-to-Source Breakdown Voltage (V)<br>**----- End of picture text -----**<br>
**Fig 12.** Maximum Avalanche Energy vs. DrainCurrent
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10<br>1<br>D = 0.50<br>0.20<br>0.1 0.10<br>0.05<br>0.02<br>0.01<br>0.01<br>SINGLE PULSE<br>0.001 ( THERMAL RESPONSE )<br>Notes:<br>1. Duty Factor D = t1/t2<br>2. Peak Tj = P dm x Zthjc + Tc<br>0.0001<br>1E-006 1E-005 0.0001 0.001 0.01 0.1<br>t1 , Rectangular Pulse Duration (sec)<br>Thermal Response ( Z thJC ) °C/W<br>**----- End of picture text -----**<br>
**Fig 13.** Maximum Effective Transient Thermal Impedance, Junction-to-Case
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1000<br>Duty Cycle = Single Pulse<br>Allowed avalanche Current vs avalanche<br>pulsewidth, tav, assuming Δ Tj = 150°C and<br>Tstart =25°C (Single Pulse)<br>100<br>0.01<br>0.05<br>10 0.10<br>Allowed avalanche Current vs avalanche<br>pulsewidth, tav, assuming ΔΤ j = 25°C and<br>Tstart = 150°C.<br>1<br>1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01<br>tav (sec)<br>Fig 14. Typical Avalanche Current vs.Pulsewidth<br>250 Notes on Repetitive Avalanche Curves , Figures 14, 15<br>TOP Single Pulse (For further info, see AN-1005 at www.irf.com)<br>BOTTOM 1.0% Duty Cycle 1. Avalanche failures assumption:<br>200 ID = 90A excess of Tjmax. This is validated for every part type.jmax. This is validated for every part type.. This is validated for every part type.<br>2. Safe operation in Avalanche is allowed as long asTjmaxjmax is not exceeded.<br>150 4. PD (ave) = Average power dissipation per single avalanche pulse.D (ave) = Average power dissipation per single avalanche pulse.= Average power dissipation per single avalanche pulse.<br>during avalanche).<br>100 6. Iav = Allowable avalanche current.<br>7. Δ T = Allowable rise in junction temperature, not to exceed = Allowable rise in junction temperature, not to exceedAllowable rise in junction temperature, not to exceed Tjmax (assumed as<br>25°C in Figure 14, 15).<br>tav = Average time in avalanche.<br>50 D = Duty cycle in avalanche = tav ·f<br>ZthJC(D, tav) = Transient thermal resistance, see Figures 13)thJC(D, tav) = Transient thermal resistance, see Figures 13)(D, tav) = Transient thermal resistance, see Figures 13)av) = Transient thermal resistance, see Figures 13)) = Transient thermal resistance, see Figures 13)<br>0 PD (ave) = 1/2 ( 1.3·BV·Iav) = � T/ ZthJC<br>25 50 75 100 125 150 175 Iav = 2 � T/ [1.3·BV·Zth]<br>Starting TJ , Junction Temperature (°C) EAS (AR) = PD (ave)·tav<br>EAR , Avalanche Energy (mJ)<br>Avalanche Current (A)<br>**----- End of picture text -----**<br>
- Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type.jmax. This is validated for every part type.. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long asTjmaxjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 24a, 24b.
4. PD (ave) = Average power dissipation per single avalanche pulse.D (ave) = Average power dissipation per single avalanche pulse.= Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche).
7. Δ T = Allowable rise in junction temperature, not to exceed = Allowable rise in junction temperature, not to exceedAllowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 14, 15).
- ZthJC(D, tav) = Transient thermal resistance, see Figures 13)thJC(D, tav) = Transient thermal resistance, see Figures 13)(D, tav) = Transient thermal resistance, see Figures 13)av) = Transient thermal resistance, see Figures 13)) = Transient thermal resistance, see Figures 13)
**Fig 15.** Maximum Avalanche Energy vs. Temperature
- ����������� ��������������������������������� ������������������������� �����������������������������������������������������
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8.0<br>ID = 90A<br>Ti)<br>6.0<br>Try ry y<br>4.0<br>T = 125°C<br>J<br>LNesESe<br>2.0<br>TJ = 25°C<br>0.0 Pik<br>4 6 8 10 12 14 16 18 20<br>VGS, Gate -to -Source Voltage (V)<br>) Ω<br>RDS(on), Drain-to -Source On Resistance (m<br>**----- End of picture text -----**<br>
**Fig 16.** On-Resistance vs. Gate Voltage
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9<br>8 IF = 36A rT)<br>VR = 34V<br>7 T = 25°C<br>J<br>T = 125°C<br>6 J | LA<br>5<br>Sei<br>43 rTYToT A UdTCOCsd<br>2<br>1 |<br>0 | 7)| || cE| || |<br>0 200 400 600 800 1000<br>diF /dt (A/μs)<br>IRRM (A)<br>**----- End of picture text -----**<br>
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8<br>IF = 90A<br>7<br>VR = 34V<br>6 T J = 25°C ae<br>TJ = 125°C<br>5 AT<br>4<br>3<br>2<br>Yt<br>1<br>0 MASE T=<br>0 200 400 600 800 1000<br>diF /dt (A/μs)<br>IRRM (A)<br>**----- End of picture text -----**<br>
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4.5<br>4.0<br>0360S<br>3.5<br>PSP<br>3.0<br>ASSTANTEL<br>2.5<br>ID = 100μA<br>ID = 250μA<br>2.0<br>eNO ID = 1.0mA SS 7<br>ID = 1.0A HINT<br>1.5<br>1.0 SaGeGRGneRen<br>-75 -25 25 75 125 175 225<br>TJ , Temperature ( °C )<br>VGS(th), Gate threshold Voltage (V)<br>**----- End of picture text -----**<br>
**Fig 17.** Threshold Voltage vs. Temperature
**==> picture [217 x 200] intentionally omitted <==**
**----- Start of picture text -----**<br>
120<br>110 I F = 36A FT<br>100 V R = 34V<br>T = 25°C<br>J<br>90<br>TJ = 125°C > i<br>80<br>70<br>60 Ht<br>50<br>PT<br>40<br>a<br>30<br>2010 PowTYP7t;[||TT[|| [| |<br>0 200 400 600 800 1000<br>diF /dt (A/μs)<br>QRR (nC)<br>**----- End of picture text -----**<br>
**==> picture [216 x 201] intentionally omitted <==**
**----- Start of picture text -----**<br>
100<br>IF = 90A<br>VR = 34V<br>80<br>TJ = 25°C | |.<br>TJ = 125°C<br>60 mA<br>2<br>40<br>Bea<br>20<br>0 PT ELI<br>0 200 400 600 800 1000<br>diF /dt (A/μs)<br>QRR (nC)<br>**----- End of picture text -----**<br>
|VGS = 5.5V<br>VGS = 6.0V<br>VGS = 7.0V<br>VGS = 8.0V<br>VGS = 10V<br>~~Ro~~|VGS = 5.5V<br>VGS = 6.0V<br>VGS = 7.0V<br>VGS = 8.0V<br>VGS = 10V<br>~~Ro~~|~~Ro~~ll|ll|ll|
|---|---|---|---|---|
|~~AN~~<br>~~VAN~~|~~AN~~<br>~~AN~~|~~AN~~<br>~~AN~~|~~AN~~|~~AN~~|
|~~VAN~~<br>~~a~~|~~AN~~<br>~~a ~~|~~AN~~<br> ~~NO~~|~~NO~~|~~NO~~|
**Fig 22.** Typical On-Resistance vs. Drain Current
**==> picture [415 x 345] intentionally omitted <==**
**----- Start of picture text -----**<br>
Driver Gate Drive<br>P.W.<br>D.U.T + { $ P.W. $ Period — — D = —— Period<br>) [©)] • CircuitLow LayoutStray InductConsiderations ] V | t GS=10<br> •<br>- • Low Leakage Inductance 2) D.U.T. ISD Waveform<br>+<br>Reverse<br>Recovery Body Diode Forward<br>® - a = Current Transformer - ° + Current r Current = di/dt /<br>©) D.U.T. VDS Waveform Diode Recoverydv/dt ‘ '<br>00 we VDD<br>iv<br>• Re-Applied<br>• Driver same type as D.U.T. + Voltage Body Diode Forward Drop<br>Re (A • dv/dt controlled by Rg Vp p -<br>•<br>D.U.T. - Device Under Test e s ee<br>Ripple ≤ 5% ISD<br>Isp controlled by Duty Factor "D" ® t<br>* Vg = 5V for Logic Level Devices<br>Fig 23. Peak Diode Recovery dv/dt Test Circuit for N-Channel<br>HEXFET ® Power MOSFETs<br>V(BR)DSS<br>15V ~— tp -><br>VDS L DRIVER<br>RG D.U.T +<br>- [V][DD]<br>IAS A<br>x 2V0VGS Jt<br>tp 0.01 A, Ω IAS —<br>**----- End of picture text -----**<br>
**==> picture [173 x 137] intentionally omitted <==**
**----- Start of picture text -----**<br>
Fig 24a. Unclamped Inductive Test<br>Circuit<br>Rp<br>Ves<br>+<br>v 1 D.U.T. -<br>i Ves<br>Pulse Width ≤ 1 us<br>Duty Factor ≤ 0.1 %<br>**----- End of picture text -----**<br>
**==> picture [167 x 11] intentionally omitted <==**
**----- Start of picture text -----**<br>
Fig 25a. Switching Time Test Circuit<br>**----- End of picture text -----**<br>
**Fig 24b.** Unclamped Inductive Waveforms
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**----- Start of picture text -----**<br>
VDS<br>90%<br>I<br>10%<br>/\<br>VGS |l v l > | ey,p l<br>td(on) tr td(off) tf<br>**----- End of picture text -----**<br>
**==> picture [167 x 10] intentionally omitted <==**
**----- Start of picture text -----**<br>
Fig 25b. Switching Time Waveforms<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
Current Regulator Id<br>Same Type as D.U.T. Vds<br>50K Ω Vgs<br>ti 12V .2 μ F | |<br>| .3 μ F<br>|[| jt | +<br>D.U.T. -VDS<br>Vgs(th)<br>VGS<br>3mA<br>s e I t G ID ‘ ele p ie a , !<br>Current Sampling Resistors Qgs1 Qgs2 Qgd Qgodr<br>**----- End of picture text -----**<br>
**Fig 26a.** Gate Charge Test Circuit
**Fig 26b.** Gate Charge Waveform
~~T<zR~~
~~|AUIRFR/U8405|~~
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
D-Pak (TO-252AA) Part Marking Information
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**----- Start of picture text -----**<br>
Part Number AUIRFR8405<br>| Date Code<br>IRLogo Té4R YWWA Y=WW= Year Work Week<br>A= Automotive, Lead Free<br>XX @ XxX<br>Lot Code<br>**----- End of picture text -----**<br>
Note: For the most current drawing please refer to IR website at http://www.1rf.com/package/
| 9g | www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
October 17, 2014
~~T<2R~~
~~|AUIRFR/U8405|~~
l-Pak (TO-251AA) Package Outline ( Dimensions are shown in millimeters (inches)
|-Pak (TO-251AA) Part Marking Information
**==> picture [377 x 144] intentionally omitted <==**
**----- Start of picture text -----**<br>
Part Number AUIRFU8405<br>| Date Code<br>IR Logo Té4R YWwa Y=WWEYearWork Week<br>A= Automotive, Lead Free<br>XX @ Xx<br>Lot Code<br>**----- End of picture text -----**<br>
Note: For the most current drawing please refer to IR website at http://www. irf.com/package/
| 10 | www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
October 17, 2014
**==> picture [485 x 124] intentionally omitted <==**
**----- Start of picture text -----**<br>
TR TRR TRL<br>OOOO 9 © : oo Oo ©<br>16.3 ( .641 ) 16.3 ( .641 )<br>15.7 ( .619 ) 15.7 ( .619 )<br>12.1 ( .476 ) FEED DIRECTION 8.1 ( .318 ) FEED DIRECTION<br>11.9 ( .469 ) 7.9 ( .312 )<br>**----- End of picture text -----**<br>
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
**==> picture [367 x 239] intentionally omitted <==**
**----- Start of picture text -----**<br>
13 INCH<br>v, O or S)<br>16 mm<br>NOTES :<br>1. OUTLINE CONFORMS TO EIA-481.<br>**----- End of picture text -----**<br>
## **†**
## **Qualification Information**
|**Qualification Information**<br>**†**|**Qualification Information**<br>**†**|||
|---|---|---|---|
|**Qualification Level**||Automotive<br>(per AEC-Q101)||
|||Comments:<br>This<br>part<br>number(s)<br>passed<br>Automotive<br>qualification. IR’s Industrial and Consumer qualification level<br>is granted by extension of the higher Automotive level.||
|**Moisture Sensitivity Level**||3L-D-PAK|MSL1|
|||I-PAK|N/A|
|**ESD**|Machine Model|Class M3 (+/- 400)††<br>AEC-Q101-002||
||Human Body Model|Class H1C (+/- 2000)††<br>AEC-Q101-001||
||Charged Device Model|Class C5 (+/- 2000)††<br>AEC-Q101-005||
|**RoHS Compliant**||Yes||
**������������**
## **����������������**
Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. Part numbers designated with the “AU” prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and process change notification. All products are sold subject to IR’s terms and conditions of sale supplied at the time of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR’s standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this warranty. Except where mandated by government requirements, testing of all parameters of each product is not necessarily performed.
IR assumes no liability for applications assistance or customer product design. Customers are responsible for their products and applications using IR components. To minimize the risks with customer products and applications, customers should provide adequate design and operating safeguards.
Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without alteration and is accompanied by all associated warranties, conditions, limitations, and notices. Reproduction of this information with alterations is an unfair and deceptive business practice. IR is not responsible or liable for such altered documentation. Information of third parties may be subject to additional restrictions.
Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for that product or service voids all express and any implied warranties for the associated IR product or service and is an unfair and deceptive business practice. IR is not responsible or liable for any such statements.
IR products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or in other applications intended to support or sustain life, or in any other application in which the failure of the IR product could create a situation where personal injury or death may occur. Should Buyer purchase or use IR products for any such unintended or unauthorized application, Buyer shall indemnify and hold International Rectifier and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that IR was negligent regarding the design or manufacture of the product.
Only products certified as military grade by the Defense Logistics Agency (DLA) of the US Department of Defense, are designed and manufactured to meet DLA military specifications required by certain military, aerospace or other applications. Buyers acknowledge and agree that any use of IR products not certified by DLA as military-grade, in applications requiring military grade products, is solely at the Buyer’s own risk and that they are solely responsible for compliance with all legal and regulatory requirements in connection with such use.
IR products are neither designed nor intended for use in automotive applications or environments unless the specific IR products are designated by IR as compliant with ISO/TS 16949 requirements and bear a part number including the designation “AU”. Buyers acknowledge and agree that, if they use any non-designated products in automotive applications, IR will not be responsible for any failure to meet such requirements.
For technical support, please contact IR’s Technical Assistance Center
http://www.irf.com/technical-info/
## **WORLD HEADQUARTERS:**
101 N. Sepulveda Blvd., El Segundo, California 90245
Tel: (310) 252-7105
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## **Revision History**
|**Revision Historyy**||
|---|---|
|**Date**|**Comments**|
|10/17/2014|•Corrected label on SOA curve Fig 8 on page 4.|
||• Updated Package outline onpage9& 10|
Updated at March 10, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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