Image not available
Illustrative purposes only
AUIRFR8403TRL
Power MOSFET, N Channel, 40 V, 100 A, 3100 µohm, TO-252 (DPAK), Surface Mount
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single MOSFETs
- Available until stocks are exhausted Alternative available
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (21-Jan-2025)
- No. of Pins: 3Pins
- Channel Type: N Channel
- Product Range: HEXFET Series
- Qualification: -
- Power Dissipation: 99W
- Transistor Mounting: Surface Mount
- Rds(on) Test Voltage: 10V
- Transistor Case Style: TO-252 (DPAK)
- Drain Source Voltage Vds: 40V
- Operating Temperature Max: 175°C
- Continuous Drain Current Id: 100A
- Drain Source On State Resistance: 3100µohm
- Gate Source Threshold Voltage Max: 3V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 1.22 € |
| Current stock | 1000+ |
| Lead time | 7 days |
Datasheet
AUIRFR8403 AUIRFU8403 ~~po~~ **AUTOMOTIVE GRADE** HEXFET[® ] Power MOSFET ## ~~Cinfineon~~ ## **Features** - Advanced Process Technology New Ultra Low On-Resistance **VDSS 40V** 175°C Operating Temperature **RDS(on) typ. 2.4m** Fast Switching **max. 3.1m** Repetitive Avalanche Allowed up to Tjmax **ID (Silicon Limited) 127A** Lead-Free, RoHS Compliant Automotive Qualified * **ID (Package Limited) 100A Description** | ~~——~~ D Specifically designed for Automotive applications, this HEXFET® Power MOSFET D utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These S S features combine to make this design an extremely efficient and reliable device for G D G use in Automotive applications and wide variety of other applications. D-Pak I-Pak **Applications** AUIRFR8403 AUIRFU8403 ## **Applications** - Electric Power Steering (EPS) - Battery Switch > Start/Stop Micro Hybrid **G D S** > Heavy Loads Gate Drain Source DC-DC Converter ~~a~~ **Standard Pack Base part number Package Type Orderable Part Number Form Quantity** AUIRFU8403 I-Pak Tube 75 AUIRFU8403 Tube 75 AUIRFR8403 AUIRFR8403 D-Pak ~~—————~~ Tape and Reel Left 3000 AUIRFR8403TRL **Absolute Maximum Ratings** Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified. |otherwise specified.pecified.ecified.|||||||| |---|---|---|---|---|---|---|---| |**Symbol**|**Parameter**||**Max.**|||**Units**|| |ID @TC= 25°C|Continuous Drain Current, VGS @10V(Silicon Limited)||127||||| |ID@ TC= 100°C|Continuous Drain Current, VGS@ 10V (Silicon Limited)||90||||| |ID@ TC= 25°C|Continuous Drain Current, VGS@ 10V (Package Limited)||100|||A|| |IDM|Pulsed Drain Current||520||||| |PD @TC= 25°C|Maximum Power Dissipation||99|||W|| ||Linear Derating Factor||0.66|||W/°C|| |VGS|Gate-to-Source Voltage||± 20|||V|| |TJ|Operating Junction and||-55 to + 175||||| |TSTG|Storage Temperature Range|||||°C|| ||SolderingTemperature,for 10 seconds(1.6mm from case)||300||||| |**Avalanche Characteristics**|||||||| |**Thermal Resistance**<br>EAS<br>Single Pulse Avalanche Energy (ThermallyLimited) <br>EAS(tested)<br>SinglePulseAvalancheEnergy (TestedLimited) <br>IAR<br>Avalanche Current<br>EAR<br>Repetitive Avalanche Energy <br>~~————— a~~||~~a~~|114<br>148<br>See Fig. 14, 15, 24a, 24b<br>A<br>mJ<br>mJ<br>~~a~~||||| |HEXFET® is a registered trademark of Infineon.<br>**Symbol **<br>**Parameter **<br>**Typ. **<br>**Max.**<br>**Units**<br>RJC<br>Junction-to-Case<br>–––<br>1.52<br>°C/W<br>RJA<br>Junction-to-Ambient(PCB Mount) <br>–––<br>50<br>RJA<br>Junction-to-Ambient<br>–––<br>110<br>~~—————————~~<br>~~ae~~|||||||| |*****Qualification standards can be found atwww.infineon.com|||||||| 1 2017-10-03 AUIRFR/U8403 ~~ll~~ ## ~~Cinfin eon~~ ## **Static @ TJ = 25°C (unless otherwise specified)** |gfs<br>~~ID~~<br>~~ee~~|Forward Trans conductance<br>~~ID~~|283<br>~~ID~~<br>~~(OD~~|–––<br>~~ID~~<br>~~(I~~|–––<br>~~ID~~<br>~~(~~|S<br>~~ID~~|VDS =10V, ID =76A<br>~~ID~~| |---|---|---|---|---|---|---| |Qg<br>~~ee~~|Total Gate Charge|–––<br>~~(OD~~|66<br>~~(I~~|99<br>~~(~~|nC|ID= 76A<br>VDS= 20V<br>VGS= 10V| |g<br>Qgs<br>~~ee~~|Gate-to-Source Charge|–––<br>~~(OD~~|18<br>~~(I ~~|–––<br> ~~(~~||| |Qgd<br>~~a~~<br>~~ee~~|Gate-to-DrainCharge|–––|22|–––||| |gd<br>Qsync<br>~~ee~~<br>~~es~~|Total Gate Charge Sync.(Qg-Qgd)|–––|44|–––||| |sync<br>td(on)<br>~~ee~~<br>~~es~~<br>~~ee~~|ggd<br>Turn-On Delay Time|–––|10|–––|ns|VDD= 26V<br>ID= 76A<br>RG= 2.7<br>VGS= 10V| |d(on)<br>tr<br>~~es~~<br>~~ee~~|Rise Time|–––|32|–––||| |td(off)<br>~~ee~~<br>~~es~~|Turn-Off DelayTime|–––|31|–––||| |d(off)<br>tf<br>~~es~~<br>~~es—————~~|Fall Time<br>~~—————~~|–––|23|–––||| |Ciss<br>~~es~~<br>~~es—————~~|Input Capacitance<br>~~—————~~|–––|3171|–––|pF|VGS= 0V<br>VDS= 25V<br>ƒ= 1.0MHz,See Fig. 5<br>~~PO~~| |Coss<br>~~es—————~~<br>~~ee~~|Output Capacitance<br>~~—————~~|–––|477|–––||| |Crss<br>~~—————~~<br>~~ee~~<br>~~ee~~|ReverseTransferCapacitance<br>~~—————~~|–––|331|–––||| |Coss eff.(ER)<br>~~—————~~<br>~~ee~~<br>~~ee~~|Effective Output Capacitance (EnergyRelated)<br>~~—————~~|–––|573|–––||VGS=0V,VDS=0Vto 32V<br>~~PO~~| |Coss eff.(TR)<br>~~—————~~<br>~~ee~~<br>~~a~~|Effective Output Capacitance (TimeRelated)<br>~~—————~~|–––|681|–––||VGS=0V,VDS=0Vto 32V<br>~~PO~~<br>~~Ps~~| |**Diode Characteristics**<br>~~—————~~<br>~~po~~||||||| |~~po~~<br>~~+~~|**Parameter **<br>~~po~~<br>~~+~~|**Min.**<br>~~po~~<br>|**Typ. M**<br>~~po~~<br>~~4,]~~|**. Max.**<br>~~po~~<br>~~4,]~~|**Units**<br>~~po~~<br>~~4,]~~|**Conditions**<br>~~po~~<br>~~4,]~~<br>~~&~~| |IS<br>~~po~~<br>~~+~~|Continuous Source Current<br>(Body Diode)<br>~~po~~<br>~~+~~|–––<br>~~po~~<br>|––– 127<br>~~po~~<br>~~4,]~~|––– 127<br>~~po~~<br>~~4,]~~|A<br>~~po~~<br>~~4,]~~<br>~~DO~~|MOSFET symbol<br>showing the<br>integral reverse<br>p-n junction diode.<br>~~po~~<br>~~4,]~~<br>~~&~~<br>~~DO~~| |ISM<br>~~+~~<br>~~es~~|Pulsed Source Current<br>(Body Diode)<br>~~+~~<br>~~DO~~|–––<br><br>~~DO~~|––– 520<br>~~4,]~~<br>~~DO~~|––– 520<br>~~4,]~~<br>~~DO~~||| |VSD<br>~~+~~<br>~~es~~<br>~~es~~|Diode Forward Voltage<br>~~+ ~~<br>~~DO~~<br>~~I~~|–––<br> <br>~~DO~~|0.9<br> ~~4,]~~<br>~~DO~~<br>~~QQ~~|1.3<br>~~4,]~~<br>~~DO~~<br>~~QQ~~|V<br>~~4,]~~<br>~~DO~~<br>~~QQ~~|TJ= 25°C,IS= 76A,VGS= 0V<br>~~4,]~~<br>~~&~~<br>~~DO~~| |dv/dt<br>~~es~~<br>~~es~~|Peak Diode Recoverydv/dt<br>~~DO~~<br>~~I~~|–––<br>~~DO~~|5.1<br>~~DO~~<br>~~QQ~~|–––<br>~~DO~~<br>~~QQ~~|V/ns<br>~~DO~~<br>~~QQ~~|TJ =175°C,IS=76A,VDS =40V<br>~~DO~~| |trr<br>~~es~~|Reverse Recovery Time<br>~~I~~|–––|25<br>~~QQ~~|–––<br>~~QQ~~|ns<br>~~QQ~~|TJ =25°C<br>~~VR = 34V,~~| |||–––|26|–––||TJ= 125°C<br>~~VR = 34V,~~<br>~~IF = 76A~~| |Qrr<br>~~eS~~|Reverse Recovery Charge<br>~~eS~~|–––<br>~~ee~~<br>~~eS~~|20<br>~~ee~~<br>~~eS~~|–––<br>~~ee~~<br>~~eS~~|nC <br>~~eS~~|TJ= 25°C<br>~~IF = 76A~~<br>~~di/dt = 100A/µs~~| |||–––<br>~~eS~~|21<br>~~eS~~|–––<br>~~eS~~||TJ= 125°C<br>~~di/dt = 100A/µs~~| |IRRM<br>~~nD~~|Reverse Recovery Current<br>~~nD~~|–––<br>~~nD~~|1.2<br>~~nD~~|–––<br>~~nD~~|A<br>~~nD~~|TJ =25°C| - Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 100A by source bonding technology. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. (Refer to AN-1140) - Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11) - Limited by TJmax , starting TJ = 25°C, L = 0.039mH, RG = 50, IAS = 76A, VGS =10V. Part not recommended for use above this value. - ISD 76A, di/dt 1255A/µs, VDD V(BR)DSS, TJ 175°C. - Pulse width 400µs; duty cycle 2%. - Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. - Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS. - When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994 - R is measured at TJ approximately 90°C. - Pulse drain current is limited by source bonding technology. 2 2017-10-03 ## AUIRFR/U8403 **==> picture [205 x 435] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>VGS<br>TOP 15V<br>10V<br>7.0V<br>100 6.0V<br>5.5V<br>5.0V<br>4.5V<br>BOTTOM 4.3V<br>10<br>Z7<br>1 =<br>4.3V 60µs PULSE WIDTH<br>Tj = 25°C<br>0.1<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig. 1 Typical Output Characteristics<br>1000<br>TJ = 175°C<br>100<br>10 ut TJ = 25°C<br>1 aLAAfo<br>VDS = 10V<br>60µs PULSE WIDTH<br>0.1 iin<br>2 3 4 5 6 7 8<br>VGS, Gate-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br> **Fig. 3** Typical Transfer Characteristics **==> picture [210 x 196] intentionally omitted <==** **----- Start of picture text -----**<br> 100000<br>VGS = 0V, f = 1 MHZ<br>Ciss = C gs + Cgd, C ds SHORTED<br>C rss = C gd<br>Coss = Cds + Cgd<br>10000<br>Ciss<br>1000 Coss<br>Crss<br>BTSs<br>il irasl<br>100<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>C, Capacitance (pF)<br>**----- End of picture text -----**<br> **Fig 5.** Typical Capacitance vs. Drain-to-Source Voltage **==> picture [209 x 674] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>VGS<br>TOP 15V<br>10V<br>7.0V<br>6.0V<br>5.5V<br>100 5.0V<br>4.5V<br>BOTTOM 4.3V<br>10 4.3V<br>ai<br>60µs PULSE WIDTH<br>Tj = 175°C<br>1<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig. 2 Typical Output Characteristics<br>2.0<br>ID = 76A<br>VGS = 10V<br>1.6<br>1.2<br>0.8<br>0.4<br>-60 -20 20 60 100 140 180<br>TJ , Junction Temperature (°C)<br>Fig. 4<br>14.0<br>ID = 76A<br>12.0<br>VDS= 32V<br>10.0 V DS = 20V<br>8.0<br>6.0<br>4.0<br>SEE<br>2.0<br>eatentes<br>0.0<br>0 10 20 30 40 50 60 70 80 90<br> QG, Total Gate Charge (nC)<br>VGS, Gate-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>RDS(on) , Drain-to-Source On Resistance (Normalized)<br>**----- End of picture text -----**<br> **Fig. 2** Typical Output Characteristics **Fig. 4** Normalized On-Resistance vs. Temperature **Fig 6.** Typical Gate Charge vs. Gate-to-Source Voltage 3 2017-10-03 AUIRFR/U8403 ~~ll~~ ## ~~Cinfineon~~ **==> picture [209 x 196] intentionally omitted <==** **----- Start of picture text -----**<br> 1000 T J = 175°C -<br>100<br>TJ = 25°C<br>101 Eiceee<br>V GS = 0V<br>0.1<br>Faiaeee<br>0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6<br>VSD, Source-to-Drain Voltage (V)<br>ISD, Reverse Drain Current (A)<br>**----- End of picture text -----**<br> **==> picture [205 x 195] intentionally omitted <==** **----- Start of picture text -----**<br> 10000<br>OPERATION IN THIS AREA<br>LIMITED BY RDS(on)<br>1000<br>east aetna<br>100 100 µsec<br>1msec<br>10<br>10msec<br>1<br>DC<br>pom<br>Tc = 25°C<br>0.1 Tj = 175°C<br>Single Pulse<br>0.01<br>0.1 1 10 SH 100<br>VDS, Drain-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br> **Fig. 7** Typical Source-to-Drain Diode Forward Voltage **Fig 8.** Maximum Safe Operating Area **==> picture [490 x 431] intentionally omitted <==** **----- Start of picture text -----**<br> 140<br>50<br>Id = 5.0mA<br>120 Limited By Packagey Package Packagegee 49<br>48<br>1008080 ZoNeeNee 4746 GeeTe<br>45<br>60<br>44<br>40 43<br>Pt te tN 7A<br>42<br>20<br>PoeEEN BERR<br>41<br>0 40<br>P| i | tt a<br>25 50 75 100 125 150 175 -60 -20 20 60 100 140 180<br> TC , Case Temperature (°C) TJ , Temperature ( °C )<br>Maximum Drain Current vs. Case Temperature Fig 10. Drain-to-Source Breakdown Voltage<br>500<br>0.5<br>ID<br>0.4 TOP 13A<br>400 24A<br>0.4<br>BOTTOM 76A<br>0.3<br>Sp<br>300<br>0.3 NCI<br>0.2<br>200<br>0.2 CNT<br>0.1 100<br>NTT<br>0.1<br>TESS<br>0.0 0<br>-5 0 5 10 15 20 25 30 35 40 45 25 50 75 100 125 150 175<br>Starting TJ , Junction Temperature (°C)<br>VDS, Drain-to-Source Voltage (V)<br>Energy (µJ)<br>V(BR)DSS, Drain-to-Source Breakdown Voltage (V)<br>EAS , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br> **==> picture [206 x 196] intentionally omitted <==** **----- Start of picture text -----**<br> 140<br>Limited By Packagey Package Packagegee<br>120<br>ZoNeeNee<br>1008080<br>60<br>40<br>Pt te tN<br>20<br>PoeEEN<br>0<br>P| i | tt<br>25 50 75 100 125 150 175<br> TC , Case Temperature (°C)<br>ID, Drain Current (A)<br>**----- End of picture text -----**<br> **Fig. 9** Maximum Drain Current vs. Case Temperature **Fig. 11** Typical COSS Stored Energy **Fig 12.** Maximum Avalanche Energy vs. Drain Current 2017-10-03 4 ~~Cinfin eon~~ AUIRFR/U8403 ~~ll~~ **==> picture [432 x 430] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>1<br>D = 0.50<br>TT 0.20 i or<br>0.10<br>0.1 0.05<br>SH eeeH (I UII<br>0.02<br>0.01<br>et errsat HT | EE ETH<br>0.01<br>SINGLE PULSE<br>Notes:<br>( THERMAL RESPONSE )<br>1. Duty Factor D = t1/t2<br>2. Peak Tj = P dm x Zthjc + Tc<br>Zell<br>0.001 Tl csi HUM<br>1E-006 1E-005 0.0001 0.001 0.01 0.1<br>t1 , Rectangular Pulse Duration (sec)<br>Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case<br>1000<br>Duty Cycle = Single Pulse<br>Allowed avalanche Current vs avalanche<br>100 TT)| pulsewidth, tav, assuming oy Tj = 150°C and<br>Tstart =25°C (Single Pulse)<br>0.01<br>10 0.05<br>0.10<br>1 passat Salil<br>Allowed avalanche Current vs avalanche<br>pulsewidth, tav, assuming j = 25°C and<br>Tstart = 150°C.<br>0.1<br>1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01<br>tav (sec)<br>Avalanche Current (A)<br>Thermal Response ( Z thJC ) °C/W<br>**----- End of picture text -----**<br> **Fig 14.** Typical Avalanche Current Vs. Pulse width **==> picture [204 x 196] intentionally omitted <==** **----- Start of picture text -----**<br> 120<br>TOP Single Pulse<br>BOTTOM 1.0% Duty Cycle<br>100 I D = 76A<br>NP<br>80<br>60<br>INNSunAnEn<br>40<br>ENON EE<br>20<br>LET NONE<br>0 EL EELEEL ENING<br>25 50 75 100 125 150 175<br>Starting TJ , Junction Temperature (°C)<br>EAR , Avalanche Energy (mJ)<br>**----- End of picture text -----**<br> **Notes on Repetitive Avalanche Curves , Figures 14, 15: (For further info, see AN-1005 at www.infineon.com)** 1. Avalanche failures assumption: - Purely a thermal phenomenon and failure occurs at a temperature far in - excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long as Tjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 24a, 24b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 13, 14). - tav = Average time in avalanche. - D = Duty cycle in avalanche = tav ·f - ZthJC(D, tav) = Transient thermal resistance, see Figures 13) **PD (ave) = 1/2 ( 1.3·BV·Iav) =** **T/ ZthJC Iav = 2** **T/ [1.3·BV·Zth]** **Fig 15.** Maximum Avalanche Energy Vs. Temperature **EAS (AR) = PD (ave)·tav** 5 2017-10-03 ~~a~~ ## ~~Cinfineon~~ **==> picture [197 x 201] intentionally omitted <==** **----- Start of picture text -----**<br> 8.0<br>ID = 76A<br>6.0 Vi} yy..<br>|<br>TJ = 125°C<br>4.02.0 / SE<br>TJ = 25°C<br>NEE<br>0.0 Yel yy ad<br>4 6 8 10 12 14 16 18 20<br>VGS, Gate -to -Source Voltage (V)<br>) <br>RDS(on), Drain-to -Source On Resistance (m<br>**----- End of picture text -----**<br> **Fig 16.** On-Resistance vs. Gate Voltage **==> picture [233 x 232] intentionally omitted <==** **----- Start of picture text -----**<br> AUIRFR/U8403<br>a<br>4.5<br>4.0<br>ATT<br>3.5<br>PEST<br>3.0<br>2.5 ARN.<br>ID = 100µA<br>2.0 ID = 250µA |<br>ID = 1.0mA<br>ID = 1.0A<br>1.5 ae aNt<br>ALLEN<br>LEP<br>1.0<br>-75 -25 25 75 125 175 225<br>TJ , Temperature ( °C )<br>VGS(th), Gate threshold Voltage (V)<br>**----- End of picture text -----**<br> **Fig. 17** - Threshold Voltage vs. Temperature **==> picture [494 x 203] intentionally omitted <==** **----- Start of picture text -----**<br> 90<br>6<br>IF = 51A<br>IF = 51A 80<br>5 V R = 34V 70 VR = 34VT J = 25°C<br>TJ = 25°C CT = Ee<br>4 T J = 125°C 60 TJ = 125°C<br>50<br>Ger LZ<br>3<br>2a SESE<br>40<br>2<br>|A | | 30 a<br>1 20<br>yy | | | er<br>10<br>0 | tt ft 0 per 200 400 | 600 | 800 1000<br>0 200 400 600 800 1000<br>diF /dt (A/µs)<br>diF /dt (A/µs)<br>IRRM (A)<br>QRR (nC)<br>**----- End of picture text -----**<br> **Fig. 18** - Typical Recovery Current vs. dif/dt **==> picture [205 x 196] intentionally omitted <==** **----- Start of picture text -----**<br> 6<br>IF = 76A<br>5 V R = 34V<br>PT.<br>TJ = 25°C<br>4 T J = 125°C<br>Boa<br>3<br>Baya<br>2<br>Sper<br>1<br>| | |<br>0<br>| tl<br>0 200 400 600 800 1000<br>diF /dt (A/µs)<br>IRRM (A)<br>**----- End of picture text -----**<br> **Fig. 19** - Typical Stored Charge vs. dif/dt **==> picture [210 x 196] intentionally omitted <==** **----- Start of picture text -----**<br> 80<br>IF = 76A<br>VR = 34V<br>60 T J = 25°C |,<br>TJ = 125°C<br>ye<br>40<br>20 Le<br>0 PTT] [.<br>0 200 400 600 800 1000<br>diF /dt (A/µs)<br>QRR (nC)<br>**----- End of picture text -----**<br> **Fig. 20** - Typical Recovery Current vs. dif/dt **Fig. 21** - Typical Stored Charge vs. dif/dt 6 2017-10-03 ~~Cinfineon~~ AUIRFR/U8403 ~~ll~~ **==> picture [203 x 197] intentionally omitted <==** **----- Start of picture text -----**<br> 10.0<br>VGS = 5.5V<br>VGS = 6.0V<br>VGS = 7.0V<br>8.0<br>VGS = 8.0V<br>VGS = 10V<br>6.0 laeINYZae<br>4.0<br>La YWL|<br>| | | |<br>2.0 Fy; ae<br>0.0<br>| tt<br>0 100 200 300 400 500<br>ID, Drain Current (A)<br>)<br> m<br>RDS(on), Drain-to -Source On Resistance (<br>**----- End of picture text -----**<br> **Fig 22.** Typical On-Resistance vs. Drain Current 2017-10-03 7 ## ~~—__———————~~ ## AUIRFR/U8403 ~~lll~~ **Fig 23.** Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs **==> picture [172 x 107] intentionally omitted <==** **----- Start of picture text -----**<br> 15V<br>L DRIVER<br>VDS<br>RG D.U.T +<br>- [V][DD]<br>JL IAS<br>20V<br>a tp ie Y 0.01<br>**----- End of picture text -----**<br> **==> picture [185 x 107] intentionally omitted <==** **----- Start of picture text -----**<br> V(BR)DSS<br>< tp ><br>IAS<br>**----- End of picture text -----**<br> **Fig 24a.** Unclamped Inductive Test Circuit **Fig 24b.** Unclamped Inductive Waveforms **Fig 25a.** Switching Time Test Circuit **Fig 25b.** Switching Time Waveforms **==> picture [172 x 124] intentionally omitted <==** **----- Start of picture text -----**<br> Id<br>Vds \<br>Vgs<br>i<br>Vgs A (th) !: 1|<br>Qgs1 Qgs2 Qgd Qgodr<br>| i 'i |i<br>**----- End of picture text -----**<br> **Fig 26a.** Gate Charge Test Circuit **Fig 26b.** Gate Charge Waveform 8 2017-10-03 ## ~~Cinfin eon~~ ## AUIRFR/U8403 ~~ll~~ **D-Pak (TO-252AA) Package Outline** (Dimensions are shown in millimeters (inches)) ## **D-Pak (TO-252AA) Part Marking Information** **==> picture [330 x 147] intentionally omitted <==** **----- Start of picture text -----**<br> Part Number AUIRFR8403<br>Date Code<br>IR Logo T éaR YWWA Y= Year<br>WW= Work Week<br><br>XX XX<br>[|Sd<br>Lot Code<br>**----- End of picture text -----**<br> 9 2017-10-03 ## ~~Cinfineon~~ ## AUIRFR/U8403 ~~ll~~ **I-Pak (TO-251AA) Package Outline** (Dimensions are shown in millimeters (inches) ## **I-Pak (TO-251AA) Part Marking Information** **==> picture [331 x 147] intentionally omitted <==** **----- Start of picture text -----**<br> Part Number AUIRFU8403<br>Date Code<br>IR Logo T éaR YWWA Y= Year<br>WW= Work Week<br><br>XX XX<br>|Sd<br>Lot Code<br>**----- End of picture text -----**<br> 10 2017-10-03 ~~Cinfineon~~ AUIRFR/U8403 ~~ll~~ ## **D-Pak (TO-252AA) Tape & Reel Information** (Dimensions are shown in millimeters (inches)) **==> picture [429 x 370] intentionally omitted <==** **----- Start of picture text -----**<br> TR TRR TRL<br>16.3 ( .641 ) 16.3 ( .641 )<br>15.7 ( .619 ) 15.7 ( .619 )<br>12.1 ( .476 ) FEED DIRECTION 8.1 ( .318 ) FEED DIRECTION<br>11.9 ( .469 ) 7.9 ( .312 )<br>NOTES :<br>1. CONTROLLING DIMENSION : MILLIMETER.<br>2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).<br>3. OUTLINE CONFORMS TO EIA-481 & EIA-541.<br> 13 INCH<br>16 mm<br>**----- End of picture text -----**<br> NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. NOTES : 1. OUTLINE CONFORMS TO EIA-481. 11 2017-10-03 ## AUIRFR/U8403 ~~ateelc~~ **Qualification Information** |**Qualification Information**|**Qualification Information**||| |---|---|---|---| |**Qualification Level**||Automotive<br>(per AEC-Q101)|| |||Comments: This part number(s) passed Automotive qualification. Infineon’s<br>Industrial and Consumer qualification level is granted by extension of the higher<br>Automotive level.|| |**Moisture Sensitivity Level**||D-Pak|MSL1| |||I-Pak|| |**ESD**|Machine Model|Class M2 (+/- 200V)† <br>AEC-Q101-002|| ||Human Body Model|Class H1C (+/- 2000V)† <br>AEC-Q101-001|| ||Charged Device Model|Class C5 (+/- 2000V)† <br>AEC-Q101-005|| |**RoHS Compliant**||Yes|| † Highest passing voltage. |**Revision History**|**Revision History**|||| |---|---|---|---|---| |**Date**||||**Comments**| |10/12/2015|||Updated datasheet with corporate template|| ||||Corrected orderingtable onpage 1.|| |10/03/2017|||Corrected typo error on part marking on page 9 and 10.|Corrected typo error on part marking on page 9 and 10.| ## **Published by Infineon Technologies AG 81726 München, Germany** **© Infineon Technologies AG 2015 All Rights Reserved.** ## **IMPORTANT NOTICE** The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office (www.infineon.com). ## **WARNINGS** Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 12 2017-10-03
Updated at March 10, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
About Novapart
Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
Learn more →Stock Shortage Specialist
When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
Request a quote →Compliant Alternatives
We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
BOM Analysis service →