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AUIRFR6215
Power MOSFET, P Channel, 150 V, 13 A, 0.295 ohm, TO-252 (DPAK), Surface Mount
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- Manufacturer: INFINEON
- Product type: Single MOSFETs
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (27-Jun-2018)
- No. of Pins: 3Pins
- Channel Type: P Channel
- Product Range: HexFET
- Qualification: AEC-Q101
- Power Dissipation: 110W
- Transistor Mounting: Surface Mount
- Rds(on) Test Voltage: 10V
- Transistor Case Style: TO-252 (DPAK)
- Drain Source Voltage Vds: 150V
- Operating Temperature Max: 175°C
- Continuous Drain Current Id: 13A
- Drain Source On State Resistance: 0.295ohm
- Gate Source Threshold Voltage Max: 4V
| Delivery and price | |
|---|---|
| Units per pack | 10 |
| Price | 1.8 € |
| Current stock | 500+ |
| Lead time | 7 days |
Datasheet
**AUTOMOTIVE GRADE** AUIRFR6215 ## **Features** **VDSS -150V** Advanced Planar Technology Low On-Resistance **RDS(on) max. 0.295** P-Channel Dynamic dv/dt Rating ~~—~~ **ID -13A** 175°C Operating Temperature Fast Switching D Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant S Automotive Qualified * G D-Pak **Description** AUIRFR6215 Specifically designed for Automotive applications of HEXFET[®] Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device **G D S** design that HEXFET power MOSFETs are well known for, Gate Drain Source ~~ee~~ provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications. **Standard Pack Base part number Package Type Orderable Part Number Form Quantity** Tube 75 AUIRFR6215 AUIRFR6215 D-Pak ~~SSS~~ Tape and Reel Left 3000 AUIRFR6215TRL **Absolute Maximum Ratings** Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified. |otherwise specified.|||| |---|---|---|---| |**Symbol**<br>~~————————~~|**Parameter**<br>~~————————~~|**Max.**|**Units**| |ID@ TC= 25°C<br>~~————————~~|Continuous Drain Current, VGS@ -10V<br>~~————————~~|-13|A| |ID @TC= 100°C<br>~~————————~~|Continuous Drain Current,VGS @-10V<br>~~————————~~|-9.0|| |IDM<br>~~————————~~|Pulsed Drain Current<br>~~————————~~|-44|| |PD@TC= 25°C<br>~~————————~~|Maximum Power Dissipation<br>~~————————~~|110|W| |~~————————~~|Linear Derating Factor<br>~~————————~~|0.71|W/°C| |VGS|Gate-to-SourceVoltage|± 20|V| |EAS|Single Pulse Avalanche Energy (ThermallyLimited) |310|mJ| |IAR|Avalanche Current|-6.6|A| |EAR|Repetitive Avalanche Energy |11|mJ| |dv/dt|Peak Diode Recoverydv/dt|-5.0|V/ns| |TJ<br>TSTG<br>~~a~~|Operating Junction and<br>Storage Temperature Range<br>~~a~~|-55 to + 175|°C| |~~a~~|SolderingTemperature,for 10 seconds(1.6mm from case)<br>~~a~~|300|| HEXFET® is a registered trademark of Infineon. ***** Qualification standards can be found at www.infineon.com 1 2017-10-05 AUIRFR6215 ~~LLL~~ ## ~~Cinfin eon~~ **Static @ TJ = 25°C (unless otherwise specified)** |Qg<br>~~ee~~<br>~~—————~~|Total Gate Charge<br>~~ee~~<br>~~—————~~|–––<br>~~ee~~<br>~~oe~~|–––<br>~~ee~~<br>~~oe~~|66<br>~~ee~~<br>~~oe~~|nC<br>~~ee~~<br>~~oe~~|ID= -6.6A<br>VDS= -120V<br>VGS= -10V, SeeFig 6 and13 <br>~~ee~~<br>~~ee~~<br>~~ee~~| |---|---|---|---|---|---|---| |g<br>Qgs<br>~~ee~~<br>~~—————~~|Gate-to-Source Charge<br>~~ee~~<br>~~—————~~|–––<br>~~ee~~<br>~~oe~~|–––<br>~~ee~~<br>~~oe~~|8.1<br>~~ee~~<br>~~oe~~||| |Qgd<br>~~ee~~<br>~~—————~~|Gate-to-Drain Charge<br>~~ee~~<br>~~—————~~|–––<br>~~ee~~<br>~~oe~~|–––<br>~~ee~~<br>~~oe~~|35<br>~~ee~~<br>~~oe~~||| |gd<br>td(on)<br>~~—————~~|Turn-On Delay Time<br>~~—————~~|–––<br>~~oe~~|14<br>~~oe~~|–––<br>~~oe~~|ns<br>~~oe~~|VDD= -75V<br>ID= -6.6A<br>RG= 6.8<br>RD=12See Fig 10<br>~~ee~~<br>~~ee~~| |d(on)<br>tr<br>~~—————~~|RiseTime<br>~~—————~~|–––<br>~~oe~~|36<br>~~oe~~|–––<br>~~oe~~||| |td(off)<br>~~—————~~|Turn-Off DelayTime<br>~~—————~~|–––<br>~~oe~~|53<br>~~oe~~|–––<br>~~oe~~||| |d(off)<br>tf<br>~~—————~~|Fall Time<br>~~—————~~|–––<br>~~oe~~|37<br>~~oe~~|–––<br>~~oe~~||| |LD<br>~~—————~~<br>~~i?~~|Internal Drain Inductance<br>~~—————~~<br>~~i?~~|–––<br>~~oe ~~<br>~~i?~~|4.5<br> ~~oe ~~<br>~~i?~~|–––<br> ~~oe~~<br>~~i?~~|nH<br>~~oe~~<br>~~i?~~|Between lead,<br>6mm (0.25in.)<br>from package<br>and center of die contact<br>~~ee~~<br>~~ee~~<br>~~i?~~| |LS<br>~~i?~~<br>~~——~~|Internal Source Inductance<br>~~i?~~<br>~~——~~|–––<br>~~i?~~|7.5<br>~~i?~~|–––<br>~~i?~~||| |Ciss<br>~~——~~|Input Capacitance<br>~~——~~|–––|860|–––|pF|VGS= 0V<br>VDS= -25V<br>ƒ= 1.0MHz,See Fig. 5| |Coss|OutputCapacitance|–––|220|–––||| |Crss|Reverse Transfer Capacitance|–––|130|–––||| |**Diode Characteristics**||||||| ||**Parameter **|**Min.**|**Typ. M**|**. Max.**|**Units**|**Conditions**| |IS<br>~~es~~|Continuous Source Current<br>(Body Diode)<br>~~es~~|–––<br>~~es~~|–––<br>~~es~~|-13<br>~~es~~|A<br>~~es~~<br>~~pf~~|MOSFET symbol<br>showing the<br>integral reverse<br>p-n junction diode.<br>~~es~~<br>~~pf~~| |ISM<br>~~es~~<br>~~pf~~|Pulsed Source Current<br>(Body Diode)<br>~~es~~<br>~~pf~~|–––<br>~~es~~<br>~~pf~~|–––<br>~~es~~<br>~~pf~~|-44<br>~~es~~<br>~~pf~~||| |VSD<br>~~pf~~|Diode Forward Voltage<br>~~pf~~|–––<br>~~pf~~|–––<br>~~pf~~|-1.6<br>~~pf~~|V<br>~~pf~~|TJ =25°C,IS= -6.6A,VGS =0V<br>~~pf~~| |trr<br>~~ee~~|Reverse Recovery Time<br>~~ee~~|–––<br>~~ee~~|160<br>~~ee~~|240<br>~~ee~~|ns<br>~~ee~~|TJ= 25°C ,IF= -6.6A<br>C di/dt = 100A/µs<br>~~ee~~| |Qrr<br>~~ee~~<br>~~ee~~|Reverse RecoveryCharge<br>~~ee~~<br>~~I~~|–––<br>~~ee~~|1.2<br>~~ee~~|1.7<br>~~ee~~|µC di/dt = 100A/<br>~~ee~~|| |ton<br>~~ee~~<br>~~ee~~|Forward Turn-On Time<br>~~ee~~<br>~~I~~|Intrinsic turn-on time is negligible(turn-on is dominated byLS+LD)<br>~~ee~~||||| ## **Notes:** - Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11) - VDD = -25V, starting TJ = 25°C, L = 14mH, RG = 25, IAS = -6.6A. (See Fig.12) - ISD -6.6A, di/dt -620A/µs, VDD V(BR)DSS, TJ 175°C. - Pulse width 300µs; duty cycle 2%. - This is applied for I-PAK, LS of D-PAK is measured between lead and center of die contact . - Uses IRF6215 data and test conditions. - When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994 - R is measured at TJ approximately 90°C. 2 2017-10-05 AUIRFR6215 **==> picture [532 x 578] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>100 VGS<br> VGS TOP - 15V<br> TOP - 15V - 10V<br> - 10V - 8.0V<br> - 8.0V - 7.0V<br> - 7.0V - 6.0V - 5.5V- 6.0V<br> - 5.5V- 5.0V BOTTOM - 4.5V- 5.0V<br> BOTTOM - 4.5V<br>10<br>10<br>-4.5V<br> 20µs PULSE WIDTH<br> -4.5V 20µs PULSE WIDTH<br>1 el=| T = 25°Cc A 1 Ae T = 175°CC<br>1 10 100<br>1 10 100<br>-V , Drain-to-Source Voltage (V)DS -V , Drain-to-Source Voltage (V)DS<br>Fig. 1 Typical Output Characteristics Fig. 2 Typical Output Characteristics<br>2.5<br>100 I = -11AD<br>2.0<br>L TLL<br>T = 25°CJ<br>1.5<br>T = 175°CJ<br>10<br>1.0<br>ava EAT<br>0.5<br>1 7fil V = -50V 20µs PULSE WIDTH DS 0.0 EEELTTeT TTT V = -10V GS<br>A -60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>4 5 6 7 8 9 10<br>-V , Gate-to-Source Voltage (V)GS T , Junction Temperature (°C)J<br>D<br>D -I , Drain-to-Source Current (A)<br>-I , Drain-to-Source Current (A)<br>(Normalized)<br>D<br>-I , Drain-to-Source Current (A) DS(on)<br>R , Drain-to-Source On Resistance<br>**----- End of picture text -----**<br> **Fig. 3** Typical Transfer Characteristics **Fig. 4** Normalized On-Resistance vs. Temperature 3 2017-10-05 AUIRFR6215 ~~LLL~~ ## ~~Cinfineon~~ **==> picture [541 x 614] intentionally omitted <==** **----- Start of picture text -----**<br> 20<br>20001600 V = 0V, f = 1MHzC C = CC = C + CGS iss gs gd ds rss gdoss ds gd= C + C , C SHORTED 16 I = -6.6AD V = -120V V = -75V V = -30VDSDSDS<br>C iss<br>Ni 12 ge<br>1200<br>SE 11<br>C oss<br>8<br>800<br>Seieeil C rss vAn<br>4<br>400<br>HF tt ZT FOR TEST CIRCUIT |<br> SEE FIGURE 13<br>0 A 0 A<br>0 20 40 60 80<br>1 10 100<br>HSS Pf<br>-V , Drain-to-Source Voltage (V)DS Q , Total Gate Charge (nC)G<br>Fig 5. Typical Capacitance vs. Fig 6. Typical Gate Charge vs.<br> Drain-to-Source Voltage Gate-to-Source Voltage<br>100 100<br> OPERATION IN THIS AREA LIMITED<br> BY RDS(on)<br>10µs<br>T = 175°CJJ<br>10<br>T JJ = 25°C 25°C°CC<br>10 100µs<br>1<br>1ms<br> T = 25°C C<br> T = 175°CJ<br>V = 0V GSGS Single Pulse 10ms<br>0.1 A 1<br>0.2 0.6 1.0 1.4 1.8 1 10 100 1000<br>-V , Source-to-Drain Voltage (V)SDSD -V , Drain-to-Source Voltage (V)DS<br>C, Capacitance (pF)<br>GS<br>-V , Gate-to-Source Voltage (V)<br>D<br>-I , Drain Current (A)<br>SD<br>-I , Reverse Drain Current (A)<br>**----- End of picture text -----**<br> **==> picture [219 x 213] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>T = 175°CJJ<br>10<br>T JJ = 25°C 25°C°CC<br>1<br>V = 0V GSGS<br>0.1<br>0.2 0.6 1.0 1.4 1.8<br>-V , Source-to-Drain Voltage (V)SDSD<br>SD<br>-I , Reverse Drain Current (A)<br>**----- End of picture text -----**<br> **Fig. 7** Typical Source-to-Drain Diode Forward Voltage **Fig 8.** Maximum Safe Operating Area 2017-10-05 4 AUIRFR6215 ~~........~~ **==> picture [200 x 187] intentionally omitted <==** **----- Start of picture text -----**<br> 14 Fi t | td] dt Th] | tT<br>12 PotP| AA| TTtT TETEe<br>10 Pt;pt tt| PNETPT NE TE TT<br>8 a<br>rt tf | ft tt ENR Ed<br>6 riPt; fttT et| tf ft| eertf | ENEIN Ift<br>4 P||| || || tT| | rt| ET| dT dT dTNGNN<br>2 P|P| tT| tt| ttt| tlreETrt | TAft<br>0 Pitt tt} tT tT tt tt<br>25 50 75 100 125 150 175<br>T , Case TemperatureC ( C)°<br>D<br>-I , Drain Current (A)<br>**----- End of picture text -----**<br> **Fig 10a.** Switching Time Test Circuit **Fig 9.** Maximum Drain Current vs. Case Temperature **Fig 10b.** Switching Time Waveforms **==> picture [478 x 213] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>1 D = 0.50<br>0.20<br>0.10<br>oO PDM<br>0.05<br>0.1 =m<br>0.02 t1<br>0.01 t<br>2<br> SINGLE PULSE Notes:<br>(THERMAL RESPONSE) 1. Duty factor D = t 1 / t 2<br>0.01 2. Peak T = P x Z + T J DM thJC C A<br>0.00001 0.0001 0.001 0.01 0.1 1<br>t , Rectangular Pulse Duration (sec)1<br>thJC<br>Thermal Response (Z )<br>**----- End of picture text -----**<br> **Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 2017-10-05 5 ~~Cinfineon~~ AUIRFR6215 ~~[~~ **Fig 12a.** Unclamped Inductive Test Circuit **==> picture [224 x 213] intentionally omitted <==** **----- Start of picture text -----**<br> 800<br> ID<br>TOP -2.7A<br> -4.7A<br>BOTTOM -6.6A<br>600 WE \ ET<br>400 \<br>200<br>S ‘Na<br>0<br>25 50 75 100 125 150 175<br>Starting T , Junction Temperature (°C)J<br>AS<br>E , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br> **Fig 12c.** Maximum Avalanche Energy vs. Drain Current **Fig 12b.** Unclamped Inductive Waveforms **Fig 13a.** Gate Charge Waveform **Fig 13b.** Gate Charge Test Circuit 6 2017-10-05 ~~Cinfineon~~ AUIRFR6215 ~~[~~ **Fig 14.** Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs 2017-10-05 7 AUIRFR6215 ~~LLL~~ ## ~~Cinfin eon~~ **D-Pak (TO-252AA) Package Outline** (Dimensions are shown in millimeters (inches)) ## **D-Pak (TO-252AA) Part Marking Information** **==> picture [330 x 148] intentionally omitted <==** **----- Start of picture text -----**<br> Part Number AUIRFR6215<br>Date Code<br>IR Logo T éaR YWWA Y= Year<br>WW= Work Week<br><br>XX XX<br>[|sd<br>Lot Code<br>**----- End of picture text -----**<br> 8 2017-10-05 AUIRFR6215 ~~LLL~~ ## ~~Cinfineon~~ **D-Pak (TO-252AA) Tape & Reel Information** (Dimensions are shown in millimeters (inches)) **==> picture [429 x 110] intentionally omitted <==** **----- Start of picture text -----**<br> TR TRR TRL<br>16.3 ( .641 ) 16.3 ( .641 )<br>15.7 ( .619 ) 15.7 ( .619 )<br>12.1 ( .476 ) FEED DIRECTION 8.1 ( .318 ) FEED DIRECTION<br>11.9 ( .469 ) 7.9 ( .312 )<br>**----- End of picture text -----**<br> NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. **==> picture [285 x 104] intentionally omitted <==** **----- Start of picture text -----**<br> 13 INCH<br>16 mm<br>**----- End of picture text -----**<br> NOTES : 1. OUTLINE CONFORMS TO EIA-481. 9 2017-10-05 AUIRFR6215 ~~ee&»«»*=75FP:SFeEee°° & &~~ **Qualification Information** |**Qualification Information**|**Qualification Information**||| |---|---|---|---| |**Qualification Level**||Automotive<br>(per AEC-Q101)|| |||Comments: This part number(s) passed Automotive qualification. Infineon’s<br>Industrial and Consumer qualification level is granted by extension of the higher<br>Automotive level.|| |**Moisture Sensitivity Level**||D-Pak|MSL1| |**ESD**|Machine Model|Class M4†<br>AEC-Q101-002|| ||Human Body Model|Class H3A†<br>AEC-Q101-001|| ||Charged Device Model|Class C5†<br>AEC-Q101-005|| |**RoHS Compliant**||Yes|| - Highest passing voltage. |**Revision History**|**Revision History**|||| |---|---|---|---|---| |**Date**||||**Comments**| |10/12/2015|||Updated datasheet with corporate template|| ||||Corrected orderingtable onpage 1.|| |10/05/2017|||Corrected typo error on part marking on page 8.|Corrected typo error on part marking on page 8.| ## **Published by Infineon Technologies AG 81726 München, Germany** **© Infineon Technologies AG 2015 All Rights Reserved.** ## **IMPORTANT NOTICE** The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office (www.infineon.com). ## **WARNINGS** Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 10 2017-10-05
Updated at March 10, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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