AUIRFR5305.
Power MOSFET, P Channel, 55 V, 31 A, 0.065 ohm, TO-252 (DPAK), Surface Mount
- Manufacturer: INFINEON
- Product type: Single MOSFETs
- Transistor Polarity:P Channel; Continuous Drain Current Id:-31A; Drain Source Voltage Vds:-55V; On Resistance Rds(on):0.065ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2V;
- No. of Pins: 3Pins
- Channel Type: P Channel
- Product Range: -
- Qualification: AEC-Q101
- Power Dissipation: 110W
- Transistor Mounting: Surface Mount
- Rds(on) Test Voltage: 10V
- Transistor Case Style: TO-252 (DPAK)
- Drain Source Voltage Vds: 55V
- Operating Temperature Max: 175°C
- Continuous Drain Current Id: 31A
- Drain Source On State Resistance: 0.065ohm
- Gate Source Threshold Voltage Max: 2V
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.585 € |
| Current stock | 10+ |
| Lead time | 30 days |
PD-96341
## **AUTOMOTIVE MOSFET**
## AUIRFR5305 AUIRFU5305
HEXFET[®] Power MOSFET
## **Features**
Advanced Planar Technology Low On-Resistance Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified *
## **Description**
Specifically designed for Automotive applications, this Cellular Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.
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D<br>V(BR)DSS -55V<br>G RDS(on) max. 0.065 Ω<br>S ID -31A<br>D<br>D<br>S<br>oi D hi \ 7 S<br>G D<br>G<br>D-Pak I-Pak<br>AUIRFR5305 AUIRFU5305<br>G D S<br>Gate Drain Source<br>-—— |} ——_<br>**----- End of picture text -----**<br>
## **Absolute Maximum Ratings**
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
**Absolute Maximum Ratings**
||**Parameter**<br>~~ae~~|**Max.**<br>~~ae~~|**Units**<br>~~ae~~|
|---|---|---|---|
|ID@ TC= 25°C|Continuous Drain Current,VGS@ -10V<br>~~a~~<br>~~ae~~|-31<br>~~a~~<br>~~ae~~|A<br>~~ae~~|
|ID@ TC= 100°C|Continuous Drain Current,VGS@ -10V<br>~~a~~<br>~~ae~~|-22<br>~~a~~<br>~~ae~~||
|IDM|Pulsed DrainCurrent<br>~~ae~~|-110<br>~~ae~~||
|PD@TC= 25°C|Power Dissipation<br>~~ae~~<br>~~a~~|110<br>~~ae~~<br>~~a~~|W<br>~~ae~~<br>~~a~~|
||Linear DeratingFactor<br>~~a~~|0.71<br>~~a~~|W/°C<br>~~a~~|
|VGS|Gate-to-Source Voltage<br>~~a~~<br>~~se~~|± 20<br>~~a~~<br>~~se~~|V<br>~~a~~<br>~~se~~|
|EAS|Single Pulse Avalanche Energy (Thermallylimited)<br>~~se~~|280<br>~~se~~|mJ<br>~~se~~|
|IAR|AvalancheCurrent|-16|A|
|EAR|Repetitive Avalanche Energy<br>~~a~~|11<br>~~a~~|mJ<br>~~a~~|
|dv/dt<br>~~pa~~|Peak Diode Recoverydv/dt<br>~~a~~<br>~~a~~<br>~~pa~~|-5.0<br>~~a~~<br>~~a~~|V/ns<br>~~a~~<br>~~a~~|
|TJ<br>TSTG<br>~~pa~~|Operating Junction and<br>Storage Temperature Range<br>~~a~~<br>~~pa~~|-55 to + 175<br>~~a~~|°C<br>~~a~~|
|~~pa~~|SolderingTemperature,for 10seconds<br>~~pa~~|300(1.6mm from case)||
HEXFET[®] is a registered trademark of International Rectifier.
***** Qualification standards can be found at http://www.irf.com/
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12/06/10
## AUIRFR/U5305
**Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)**
||**Parameter**|**Min.**<br>~~QO~~|**Typ.**<br>~~QO~~|**Max.**<br>~~QO~~|**Units**<br>~~(S(O~~|**Conditions**<br>~~(S(O~~|
|---|---|---|---|---|---|---|
|V(BR)DSS|Drain-to-Source Breakdown Voltage<br>~~RD~~|-55<br>~~RD~~<br>~~QO~~<br>~~QO~~|–––<br>~~RD~~<br>~~QO~~<br>~~QO~~|–––<br>~~RD~~<br>~~QO~~<br>~~QO~~|V<br>~~RD~~<br>~~(S(O~~<br>~~QO~~|VGS= 0V,ID= -250µA<br>~~RD~~<br>~~(S(O~~<br>~~(OO~~|
|∆V(BR)DSS/∆TJ|Breakdown Voltage Temp. Coefficient<br>~~RD~~<br>~~RD~~<br>~~GO~~|–––<br>~~RD~~<br>~~QO~~<br>~~RD~~<br>~~QO~~<br>~~GO~~|-0.034<br>~~RD~~<br>~~QO~~<br>~~RD~~<br>~~QO~~<br>~~GO~~|–––<br>~~RD~~<br>~~QO~~<br>~~RD~~<br>~~QO~~<br>~~**G**~~|V/°C<br>~~RD~~<br>~~(S(O~~<br>~~RD~~<br>~~QO~~<br>~~**G**G~~|Reference to 25°C,ID= -1mA<br>~~RD~~<br>~~(S(O~~<br>~~RD~~<br>~~(OO~~<br>~~G~~|
|RDS(on)|Static Drain-to-Source On-Resistance<br>~~RD~~<br>~~GO~~<br>~~GO~~|–––<br>~~RD~~<br>~~QO~~<br>~~GO~~<br>~~GO~~|–––<br>~~RD~~<br>~~QO~~<br>~~GO~~<br>~~GO~~|0.065<br>~~RD~~<br>~~QO~~<br>~~GO~~<br>~~**G**~~|Ω<br>~~RD~~<br>~~QO ~~<br>~~GO~~<br>~~**G**G~~|VGS= -10V,ID= -16A<br>~~RD~~<br> ~~(OO~~<br>~~GO~~<br>~~G~~|
|VGS(th)|Gate Threshold Voltage<br>~~GO~~|-2.0<br>~~GO~~|–––<br>~~GO~~|-4.0<br>~~**G**~~<br>~~GG~~|V<br>~~**G**G~~<br>~~GG~~|VDS= VGS,ID= -250µA<br>~~G~~<br>~~G~~<br>~~GG~~<br>~~©~~|
|gfs|Forward Transconductance<br>~~GO~~|8.0<br>~~GO~~|–––<br>~~GO~~|–––<br>~~GO~~<br>~~GG~~|S<br>~~GO~~<br>~~GG~~|VDS= -25V,ID= -16A<br>~~GO~~<br>~~GG~~<br>~~©~~|
|IDSS<br>~~Ne~~|Drain-to-Source Leakage Current<br>~~ee~~<br>~~Ne~~|–––<br>~~ee~~|–––<br>~~ee~~|-25<br>~~GG~~<br>~~ee~~|µA<br>~~GG~~<br>~~ee~~<br>~~P|~~|VDS= -55V,VGS= 0V<br>~~GG~~<br>~~©~~<br>~~ee~~|
|||–––<br>~~ee~~|–––<br>~~ee~~<br>~~a~~|-250<br>~~ee~~<br>~~a~~||VDS= -44V,VGS= 0V,TJ= 150°C<br>~~ee~~<br>~~P|~~|
|IGSS<br>~~Ne~~|Gate-to-Source Forward Leakage<br>~~Ne~~|–––|–––<br>~~a~~|100<br>~~a~~|nA<br>~~P|~~|VGS= -20V<br>~~P|~~|
||Gate-to-Source Reverse Leakage<br>~~Ne~~|–––|–––<br>~~a~~|-100<br>~~a~~||VGS= 20V<br>~~P|~~|
|**Dynamic Electrical Characteristics @ TJ = 25°C(unless otherwise specified)**<br>~~a~~<br>~~Ne~~|||||~~P|~~|~~P|~~|
||**Parameter**<br>~~GO~~|**Min.**<br>~~GO~~|**Typ.**<br>~~GO~~|**Max.**<br>~~GO~~|**Units**<br>~~GO~~|**Conditions**<br>~~GO~~|
|Qg|TotalGateCharge<br>~~es~~|–––<br>~~es~~|–––<br>~~es~~|63<br>~~es~~|nC|VDS= -44V<br>ID= -16A<br>VGS= -10V See Fig.6 and 13<br>@®|
|Qgs<br>~~a~~|Gate-to-SourceCharge<br>~~a~~<br>~~a~~|–––|–––|13|||
|Qgd<br>~~a~~|Gate-to-Drain("Miller") Charge<br>~~a~~|–––|–––|29|||
|td(on)<br>~~a~~<br>~~a~~|Turn-On DelayTime<br>~~a~~<br>~~a~~|–––|14|–––|ns<br>~~T~~|RD= 1.6ΩSee Fig.10<br>VDD= -28V<br>ID= -16A<br>RG= 6.8Ω<br>~~TT~~|
|tr<br>~~a~~|Rise Time<br>~~a~~|–––|66|–––|||
|td(off)<br>~~a~~|Turn-Off DelayTime<br>~~a~~|–––|39|–––|||
|tf|Fall Time|–––|63|–––|||
|LD|Internal Drain Inductance|–––|4.5|–––|nH<br>~~T~~|S<br>D<br>G<br>Between lead,<br>6mm (0.25in.)<br>from package<br>and center of die contact<br>~~TT~~|
|LS|Internal Source Inductance|–––|7.5|–––|||
|Ciss|Input Capacitance|–––|1200|–––|pF<br>~~T~~|VGS= 0V<br>VDS= -25V<br>ƒ= 1.0MHz,see Fig.5<br>~~TT~~<br>~~®~~|
|Coss<br>~~a~~|Output Capacitance<br>~~a~~|–––|520|–––|||
|Crss<br>~~a~~|Reverse Transfer Capacitance<br>~~a~~|–––|250|–––|||
oO) Repetitive rating; pulse width limited by ® Pulse width ≤ 300 y s; duty cycle ≤ 2%. max. junction temperature. (See Fig. 11) ® This is applied for I-PAK, LS of D-PAK is measured between @ VDD = -25V, starting TJ = 25DD = -25V, starting TJ = 25= -25V, starting TJ = 25J = 25= 25 ° C, L = 2.1mH lead and center of die contact.
VDD = -25V, starting TJ = 25DD = -25V, starting TJ = 25= -25V, starting TJ = 25J = 25= 25 ° C, L = 2.1mH
- RG = 25 Ω IAS = -16A. (See Figure 12)
Uses IRF5305 data and test conditions.
- ISD ≤ -16A, di/dt ≤ -280A/ s, VDD ≤ V(BR)DSS,
- TJ ≤ 175 C
- *When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
- *** Uses typical socket mount.
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AUIRFR/U5305
## **Qualification Information[†]**
|**Qualification Information[†]**|**Qualification Information[†]**|||
|---|---|---|---|
|**Qualification Level**||Automotive<br>(per AEC-Q101)††||
|||Comments: This part number(s) passed Automotive qualification.<br>IR’s Industrial and Consumer qualification level is granted by<br>extension of the higher Automotive level.||
|**Moisture Sensitivity Level**||D PAK|MSL1|
|||I-PAK|N/A|
|**ESD**|Machine Model|Class M2 (200V)<br>( per AEC-Q101-002)||
||Human Body Model|Class H1B (1000V)<br>(per AEC-Q101-001)||
||Charged Device<br>Model|Class C5 (1125V)<br>(per AEC-Q101-005)||
|**RoHS Compliant**||Yes||
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## AUIRFR/U5305
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1000 VO an<br> TOP - 15V<br> - 10V Sep ep<br> - 8.0V<br> - 7.0V HOT<br> - 6.0V<br> - 5.5V<br> - 5.0V<br> BOTTOM - 4.5V<br>100<br>eZ ee<br>ee, Ze<br>10 | ye<br>[— fa<br>|) —$ O—A2i ooeeo<br>|UYVL“ff |} a -4.5V<br>1 baVA 7 | T = 25°C 20us c PULSE WIDTH<br>0.1 1 10 100<br>-V , Drain-to-Source Voltage (V)DS<br>D<br>-I , Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>
**Fig 1.** Typical Output Characteristics
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100 a<br>aeeeeeeee ee<br>ee ee ee ee ee. 2<br>ee ee ee as eee<br>T = 25°CJ<br>P | ea T = 175°C r J<br>L F y |<br>10 PALLa ee/ ee<br>a / 2 ee ee ee ee eee eee eee<br>yf ee ee<br>|<br> V = -25VDS<br>1 LT J rns users<br>4 5 6 7 8 9 10<br>-V , Gate-to-Source Voltage (V)GS<br>D<br>-I , Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>
**Fig 3.** Typical Transfer Characteristics
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1000 TOP - 15V Vesna<br> - 10V<br> - 8.0V 1 ee eee<br> - 7.0V<br> - 6.0V a<br> - 5.5V<br> - 5.0V<br> BOTTOM - 4.5V<br>100<br>pt Oe<br>——<br>10 |Ugan<br>| |—\—\—|—[eo—.,f— L f e -4.5V a<br>|Y e }<br>a 20µs PULSE WIDTH<br>1 Y ZZZnZi =e T = 175°CC<br>0.1 1 10 100<br>-V , Drain-to-Source Voltage (V)DS<br>D<br>-I , Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>
**Fig 2.** Typical Output Characteristics
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2.0<br>"A<br>Vv<br>1.5 PEELEvA<br>PEE AGELyaLP<br>1.0 PUP | AT<br>0.50.0 PEELEPPE Ev ELE tou EL<br>-60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>T , Junction Temperature (°C)J<br>(Normalized)<br>DS(on)<br>R , Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>
**Fig 4.** Normalized On-Resistance Vs. Temperature
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AUIRFR/U5305
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2500<br>V = 0V, f = 1MHzGS<br>C = C + C , C SHORTEDiss gs gd ds<br>C = Crss gd<br>2000 waa C = C + Coss ds gd<br>s<br>Ke ST<br>ss<br>1500<br>pec PAUP<br>SE Sl<br>1000<br>aN lll<br>ss<br>eK!<br>500<br>ml SE<br>0 lll<br>1 10 100<br>-V , Drain-to-Source Voltage (V)DS<br>Fig 5. Typical Capacitance Vs.<br>Drain-to-Source Voltage<br>1000<br>re ee ee<br>100 pfPottff<br>SS<br>T = 175°CJ<br>Ea ne T = 25°CJ S e<br>| | | “A 4 | a| |<br>mn<br>4) Ae<br>10 PALI | = ov<br>0.4 0.8 1.2 1.6 2.0<br>-V , Source-to-Drain Voltage (V)SD<br>C, Capacitance (pF)<br>SD<br>-I , Reverse Drain Current (A)<br>**----- End of picture text -----**<br>
**Fig 7.** Typical Source-Drain Diode Forward Voltage
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20<br>I = -16AD<br>16 pt sea<br>Saeeeeeeeey<br>12<br>pf | | ty<br>EERE EEE 4Ann<br>8<br>Pot | La<br>4 Pt ay |<br>P7TT<br>0 7 fy | | }—} | toes SEE FIGURE 13<br>0 10 20 30 40 50 60<br>Q , Total Gate Charge (nC)G<br>GS<br>-V , Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>
**Fig 6.** Typical Gate Charge Vs. Gate-to-Source Voltage
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1000<br> OPERATION IN THIS AREA LIMITED<br> BY RDS(on)<br>2<br>100<br>panna agent anna n n<br>Pe LOS 100µs |<br>10<br>peeS O 1ms<br>eeSamaeeee e el<br>eee<br>Speeienatis ES SE 10ms<br>1 Sei Single Pulse S ln<br>1 10 100<br>-V , Drain-to-Source Voltage (V)DS<br>D<br>-I , Drain Current (A)<br>**----- End of picture text -----**<br>
**Fig 8.** Maximum Safe Operating Area
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## AUIRFR/U5305
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35 Pt tt EE EE<br>RDD<br>30 Ri tT dt dE dT dT Td | TdT VDSDS<br>25 P| PAE EEE TET Tt VGSGS D.U.T.<br>ae aNE eee RGG :<br>20 Pt tt EE TENG EEE<br>15 Pt} tt tT eT TN ET i -10V<br>Pulse Width ≤ 1 s<br>Pt tT EE EE EIN, Duty Factor ≤ 0.1 %<br>10 Pt tt te tt TE TN<br>5 Pitttet tt TT Fig 10a.<br>0 Fit > tT ttt] tt<br>25 50 75 100 125 150 175<br>T , Case TemperatureC ( C)° td(on) tr td(off) tf<br>VGS<br>10%<br>Fig 9. Maximum Drain Current Vs.<br>Case Temperature<br>|<br>90%<br>VDS VA<br>Fig 10b. Switching Time Waveforms<br> 10<br>PCsee ($C PTTT<br>Pf fe ft<br> 1 eT<br>e D = 0.50 e<br>a ee eee<br>0.20 a ne ee<br>ee ee ee eee<br>0.10<br>en PDM<br>0.1 0.05 es [=] aeoat ee<br>t1<br>0.02 SINGLE PULSE<br>0.01 Le | | (THERMAL RESPONSE) aQO t2<br>=aan S aeS Notes:<br>1. Duty factor D = t / t1 2<br>F i oi 2. Peak T J = P DM x Z thJC + TC<br>0.01<br>0.00001 0.0001 0.001 0.01 0.1<br>t , Rectangular Pulse Duration (sec)1<br>D<br>-I , Drain Current (A)<br>thJC<br>(Z )<br>Thermal Response<br>**----- End of picture text -----**<br>
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RDD<br>VDSDS<br>VGSGS<br>D.U.T.<br>RGG<br>: +- VDD<br>i -10V<br>Pulse Width ≤ 1 s<br>Duty Factor ≤ 0.1 %<br>**----- End of picture text -----**<br>
**Fig 10a.** Switching Time Test Circuit
**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case
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AUIRFR/U5305
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VDS L<br>RG D.U.T il VDD<br>IAS<br>-20V + DRIVER<br>poe tp 0.01 Ω<br>15V<br>Fig 12a. Unclamped Inductive Test<br>Circuit<br>IAS<br>\ |<br>‘Od<br>\<br>¢— tp<br>V(BR)DSS<br>-<br>+<br>**----- End of picture text -----**<br>
**Fig 12a.** Unclamped Inductive Test Circuit
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700<br> ID<br>TOP -6.6A<br>600 T,se |. -11A<br>BOTTOM -16A<br>A ee<br>500 PNE ee ee EEee<br>ee<br>400 Ss ee<br>300 NOLENNNCOOCR_LLLLEE<br>PAINTING<br>200<br>EE EE<br>PO s<br>100 SSAINA<br>2 AN<br> V = -25V oe DD<br>0<br>25 50 75 100 125 150 175<br>Starting T , Junction Temperature (°C)J<br>AS<br>E , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>
**Fig 12c.** Maximum Avalanche Energy Vs. Drain Current
**Fig 12b.** Unclamped Inductive Waveforms
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Current Regulator<br>Same Type as D.U.T.<br>50K Ω<br>QG 12V .2 µ F .3 µ F<br>-10V QGS QGD ae D.U.T. +-VDS<br>VGS<br>VG -3mA<br>an |<br>IG ID<br>Charge Current Sampling Resistors<br>**----- End of picture text -----**<br>
**Fig 13a.** Basic Gate Charge Waveform
**Fig 13b.** Gate Charge Test Circuit
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## AUIRFR/U5305
## **Peak Diode Recovery dv/dt Test Circuit**
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+ Circuit Layout Considerations<br> • Low Stray Inductance<br>• Ground Plane<br>• Low Leakage Inductance<br>D.U.T(rr Current Transformer<br>| -<br>+<br>- - +<br>ae<br>dt<br>o wk<br>Re • dv/dt controlled by RG + *<br>• ISD controlled by Duty Factor "D" - VDD<br>VGS* • D.U.T. - Device Under Test<br>**----- End of picture text -----**<br>
- Reverse Polarity for P-Channel
- ** Use P-Channel Driver for P-Channel Measurements
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O) Driver Gate Drive<br>P.W.<br>Period D =<br>P.W. Period<br>—— oo _<br>an)|<br>D.U.T. ISD Waveform<br>Reverse<br>Recovery Body Diode Forward<br>Current ® Current ==<br>i di/dt /<br>® D.U.T. VDS Waveform<br>Diode Recoverydv/dt \<br>/L,<br>Re-Applied<br>Voltage Body Diode Forward Drop<br>® Inductor Curent<br>ee<br>Ripple ≤ 5% [ ]<br>**----- End of picture text -----**<br>
- *** VGS = 5.0V for Logic Level and 3V Drive Devices
**Fig 14.** For P-Channel HEXFETS
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## AUIRFR/U5305
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## AUIRFR/U5305
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## AUIRFR/U5305
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TR TRR TRL<br>ar<br>16.3 ( .641 ) 16.3 ( .641 )<br>15.7 ( .619 ) 15.7 ( .619 )<br>12.1 ( .476 ) FEED DIRECTION 8.1 ( .318 ) FEED DIRECTION<br>11.9 ( .469 ) 7.9 ( .312 )<br>NOTES :<br>1. CONTROLLING DIMENSION : MILLIMETER.<br>2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).<br>3. OUTLINE CONFORMS TO EIA-481 & EIA-541.<br> 13 INCH<br>| x<br>16 mm |<br>**----- End of picture text -----**<br>
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
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## AUIRFR/U5305
## **Ordering Information**
|**Base part**|**Package Type**|**Standard Pack**|**Standard Pack**|**Complete Part Number**|
|---|---|---|---|---|
|||**Form**|**Quantity**||
|AUIRFR5305|DPak|Tube|75|AUIRFR5305|
|||Tape and Reel|2000|AUIRFR5305TR|
|||Tape and Reel Left|3000|AUIRF5305TRL|
|||Tape and Reel Right|3000|AUIRF5305TRR|
|AUIRFU5305|IPak|Tube|75|AUIRFU5305|
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## AUIRFR/U5305
Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. Part numbers designated with the “AU” prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and process change notification. All products are sold subject to IR’s terms and conditions of sale supplied at the time of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR’s standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this warranty. Except where mandated by government requirements, testing of all parameters of each product is not necessarily performed.
IR assumes no liability for applications assistance or customer product design. Customers are responsible for their products and applications using IR components. To minimize the risks with customer products and applications, customers should provide adequate design and operating safeguards.
Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without alteration and is accompanied by all associated warranties, conditions, limitations, and notices. Reproduction of this information with alterations is an unfair and deceptive business practice. IR is not responsible or liable for such altered documentation. Information of third parties may be subject to additional restrictions.
Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for that product or service voids all express and any implied warranties for the associated IR product or service and is an unfair and deceptive business practice. IR is not responsible or liable for any such statements.
IR products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or in other applications intended to support or sustain life, or in any other application in which the failure of the IR product could create a situation where personal injury or death may occur. Should Buyer purchase or use IR products for any such unintended or unauthorized application, Buyer shall indemnify and hold International Rectifier and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that IR was negligent regarding the design or manufacture of the product.
IR products are neither designed nor intended for use in military/aerospace applications or environments unless the IR products are specifically designated by IR as military-grade or “enhanced plastic.” Only products designated by IR as military-grade meet military specifications. Buyers acknowledge and agree that any such use of IR products which IR has not designated as military-grade is solely at the Buyer’s risk, and that they are solely responsible for compliance with all legal and regulatory requirements in connection with such use.
IR products are neither designed nor intended for use in automotive applications or environments unless the specific IR products are designated by IR as compliant with ISO/TS 16949 requirements and bear a part number including the designation “AU”. Buyers acknowledge and agree that, if they use any non-designated products in automotive applications, IR will not be responsible for any failure to meet such requirements
For technical support, please contact IR’s Technical Assistance Center http://www.irf.com/technical-info/
## **WORLD HEADQUARTERS:**
233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105
www.irf.com
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Updated at March 10, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
About Novapart
Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
Learn more →Stock Shortage Specialist
When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
Request a quote →Compliant Alternatives
We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
BOM Analysis service →