AUIRFR4292TRL
Power MOSFET, N Channel, 250 V, 9.3 A, 0.275 ohm, TO-252 (DPAK), Surface Mount
- Manufacturer: INFINEON
- Product type: Single MOSFETs
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Channel Type: N Channel
- Product Range: HEXFET Series
- Qualification: AEC-Q101
- Power Dissipation: 100W
- Transistor Mounting: Surface Mount
- Transistor Polarity: N Channel
- Power Dissipation Pd: 100W
- Rds(on) Test Voltage: 10V
- On Resistance Rds(on): 0.275ohm
- Transistor Case Style: TO-252 (DPAK)
- Drain Source Voltage Vds: 250V
- Operating Temperature Max: 175°C
- Continuous Drain Current Id: 9.3A
- Drain Source On State Resistance: 0.275ohm
- Automotive Qualification Standard: AEC-Q101
- Gate Source Threshold Voltage Max: 5V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 0.857 € |
| Current stock | 1000+ |
| Lead time | 7 days |
AUIRFR4292 AUIRFU4292 ~~po~~
**AUTOMOTIVE GRADE**
## ~~Cinfineon~~
## **Features**
**VDSS 250V** Advanced Process Technology Low On-Resistance **RDS(on) typ. 275m** 175°C Operating Temperature **max. 345m** Fast Switching **ID 9.3A** ~~———~~ Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * D D **Description** G S D S Specifically designed for Automotive applications, this HEXFET[®] G Power MOSFET utilizes the latest processing techniques to D-Pak I-Pak achieve extremely low on-resistance per silicon area. Additional AUIRFR4292 AUIRFU4292 features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . **G D S** These features combine to make this design an extremely efficient Gate Drain Source ~~Ey~~ and reliable device for use in Automotive applications and a wide variety of other applications.
|**Base part number**<br>~~RR~~|**Package Type**<br>~~RREee~~|**Standard Pack**<br>~~Eee~~|**Standard Pack**<br>~~Eee~~|**Orderable Part Number**<br>~~Eee~~|**Note**<br>~~Eee~~|
|---|---|---|---|---|---|
|||**Form**<br>~~Eee~~|**Quantity**<br>~~Eee~~|||
|AUIRFU4292<br>~~RR~~|I-Pak<br>~~RREee~~|Tube<br>~~Eee~~|75<br>~~Eee~~|AUIRFU4292<br>~~Eee~~|~~Eee~~|
|AUIRFR4292<br>~~RR~~|D-Pak<br>~~RR~~|Tube<br>|75<br>|AUIRFR4292<br><br>~~—=~~|~~—=~~|
|||Tape and Reel Left|3000|AUIRFR4292TRL<br>~~—=~~|~~—=~~|
|||~~Tape and Reel Right~~|~~3000~~|~~AUIRFR4292TRR~~<br>~~—=~~|EOL notice # 530<br>~~—=~~|
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
|**Symbol**<br>~~sO~~<br>~~—————————~~|**Parameter**<br>~~sO~~<br>~~—————————~~|**Max.**<br>~~sO~~|**Units**<br>~~sO~~|
|---|---|---|---|
|ID@ TC= 25°C<br>~~sO~~<br>~~—————————~~|Continuous Drain Current, VGS@ 10V<br>~~sO~~<br>~~—————————~~|9.3<br>~~sO~~|A<br>~~sO~~|
|ID @TC= 100°C<br>~~—————————~~|Continuous Drain Current,VGS @10V<br>~~—————————~~|6.6||
|IDM<br>~~—————————~~|Pulsed Drain Current<br>~~—————————~~|40||
|PD@TC= 25°C<br>~~—————————~~|Maximum Power Dissipation<br>~~—————————~~|100|W|
|~~—————————~~|Linear Derating Factor<br>~~—————————~~|0.67|W/°C|
|VGS<br>~~—————~~|Gate-to-SourceVoltage<br>~~—————~~|± 20|V|
|EAS<br>~~—————~~|Single Pulse Avalanche Energy (ThermallyLimited) <br>~~—————~~|130|mJ|
|EAS(Tested)<br>~~—————~~|Single Pulse Avalanche EnergyTested Value<br>~~—————~~|97||
|IAR<br>~~—————~~|Avalanche Current<br>~~—————~~|See Fig.15,16, 12a, 12b<br>~~eee~~|A|
|EAR<br>~~—————~~<br>~~ee~~|Repetitive Avalanche Energy <br>~~—————~~<br>~~ee~~||mJ<br>~~eee~~|
|TJ<br>TSTG<br>~~—————~~<br>~~ee~~|Operating Junction and<br>Storage Temperature Range<br>~~—————~~<br>~~ee~~|-55 to + 175<br>~~eee~~|°C<br>~~eee~~|
|~~ee~~|SolderingTemperature,for 10 seconds(1.6mm from case)<br>~~ee~~|300<br>~~eee~~||
HEXFET® is a registered trademark of Infineon.
***** Qualification standards can be found at www.infineon.com
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**Static @ TJ = 25°C (unless otherwise specified)**
|Qg<br>~~e~~~~**s**~~|Total Gate Charge|–––|13|20|nC<br>~~Pf~~|ID= 5.6A<br>VDS= 125V<br>VGS= 10V<br>~~Pf~~|
|---|---|---|---|---|---|---|
|g<br>Qgs<br>~~e~~~~**s**~~<br>~~R~~|Gate-to-Source Charge|–––|4.7|–––|||
|Qgd<br>~~e~~~~**s**~~<br>~~R~~<br>~~Rs~~|Gate-to-Drain Charge|–––|4.8|–––|||
|gd<br>td(on)<br>~~R~~<br>~~Rs~~|Turn-On Delay Time|–––|11|–––|ns<br>|VDD= 250V<br>ID= 5.6A<br>RG= 15<br>VGS= 10V<br>|
|d(on)<br>tr<br>~~Rs~~<br>~~es~~|Rise Time|–––|15|–––|||
|td(off)<br>~~es~~<br>~~es~~|Turn-Off DelayTime<br>|–––<br>|16<br>|–––<br>|||
|d(off)<br>tf<br>~~es~~<br>~~es~~|Fall Time<br>|–––<br>|8.4<br>|–––<br>|||
|LD<br>~~esoo?~~|Internal Drain Inductance<br>~~oo?~~|–––<br>~~oo?~~|4.5<br>~~oo?~~|–––<br>~~oo?~~|nH<br>~~oo?~~|Between lead,<br>6mm (0.25in.)<br>from package<br>and centerofdie contact<br>~~oo?~~|
|LS<br>~~oo?~~|Internal Source Inductance<br>~~oo?~~|–––<br>~~oo?~~|7.5<br>~~oo?~~|–––<br>~~oo?~~|||
|Ciss<br>~~oo?~~<br>~~es~~<br>~~**e**~~|Input Capacitance<br>~~oo?~~<br><br>~~**e**ee~~|–––<br>~~oo?~~<br><br>~~ee~~|705<br>~~oo?~~<br><br>~~ee~~|–––<br>~~oo?~~<br><br>~~ee~~|pF<br>~~oo?~~<br>~~ee~~|VGS= 0V<br>VDS= 25V<br>ƒ= 1.0MHz<br>~~oo?~~<br>~~ee~~<br>~~PO~~|
|Coss<br>~~es~~<br>~~**e**~~|Output Capacitance<br>~~nn~~<br>~~**e**ee~~|–––<br>~~nn~~<br>~~ee~~|71<br>~~nn~~<br>~~ee~~|–––<br>~~nn~~<br>~~ee~~|||
|Crss<br>~~es~~<br>~~**e**~~<br>~~es~~|ReverseTransferCapacitance<br><br>~~**e**ee~~<br>~~ee~~|–––<br><br>~~ee~~|20<br><br>~~ee~~|–––<br><br>~~ee~~|||
|Coss<br>~~**e**~~<br>~~es~~<br>~~es~~|Output Capacitance<br>~~**e**ee~~<br>~~ee~~<br>~~es~~|–––<br>~~ee~~|600<br>~~ee~~|–––<br>~~ee~~||VGS=0V,VDS= 1.0Vƒ= 1.0MHz<br>~~PO~~<br>~~PO~~|
|Coss<br>~~**e**~~<br>~~es ~~<br>~~es~~<br>~~s~~|Output Capacitance<br>~~**e**ee~~<br> ~~ee~~<br>~~es~~<br>~~ns~~|–––<br>~~ee~~|26<br>~~ee~~|–––<br>~~ee~~||VGS =0V, VDS =200V ƒ=1.0MHz<br>~~PO~~<br>~~PO~~<br>~~PO~~|
|Coss eff.<br>~~**e**~~<br>~~es ~~<br>~~s~~|Effective Output Capacitance<br>~~**e**ee~~<br> ~~es~~<br>~~ns~~|–––<br>~~ee~~|65<br>~~ee~~|–––<br>~~ee~~||VGS=0V,VDS=0Vto200V<br>~~PO~~<br>~~PO~~|
|**Diode Characteristics**<br>~~s~~<br>~~ns~~<br>~~PO~~<br>~~po~~<br>~~_&~~<br>~~es~~|||||||
|~~po~~<br>~~es~~|**Parameter **<br>~~po~~|**Min.**<br>~~po~~|**Typ. M**<br>~~po~~|**. Max.**<br>~~po~~|**Units**<br>~~po~~|**Conditions**<br>~~po~~<br>~~_&~~|
|IS<br>~~po~~<br>~~to~~<br>~~es~~|Continuous Source Current<br>(Body Diode)<br>~~po~~<br>~~to~~|–––<br>~~po~~<br>~~to~~|–––<br>~~po~~<br>~~to~~|9.3<br>~~po~~<br>~~to~~|A<br>~~po~~<br>~~to~~<br>~~QO~~<br>|MOSFET symbol<br>showing the<br>integral reverse<br>p-n junction diode.<br>~~po~~<br>~~to~~<br>~~_&~~<br>|
|ISM<br>~~to~~<br>~~es~~<br>~~Ce~~|Pulsed Source Current<br>(Body Diode)<br>~~to~~<br>~~ID~~<br>|–––<br>~~to~~<br>~~(EN~~<br>|–––<br>~~to~~<br>~~(EN~~<br>|40<br>~~to~~<br>~~(EN~~<br>|||
|VSD<br>~~to~~<br>~~es~~<br>~~Ce~~|Diode Forward Voltage<br>~~to~~<br>~~ID~~<br>|–––<br>~~to~~<br>~~(EN~~<br>|–––<br>~~to~~<br>~~(EN~~<br>|1.3<br>~~to~~<br>~~(EN~~<br>|V<br>~~to~~<br>~~QO~~<br>|TJ =25°C,IS=5.6A,VGS =0V<br>~~to~~<br>~~_&~~<br>|
|trr<br>~~es~~<br>~~Ce~~<br>~~es~~|Reverse Recovery Time<br>~~ID~~<br>~~ee~~<br>|–––<br>~~(EN~~<br>~~ee~~<br>|110<br>~~(EN~~<br>~~ee~~<br>|165<br>~~(EN~~<br>~~ee~~<br>|ns<br>~~QO~~<br>~~ee~~<br>|TJ= 25°C ,IF= 5.6A, VDD= 125V<br>nC di/dt = 100A/µs<br>~~_ &~~<br>~~ee~~<br>|
|Qrr<br>~~Ce~~<br>~~es~~|Reverse RecoveryCharge<br>~~ID~~<br>~~ee~~<br>|–––<br>~~(EN~~<br>~~ee~~<br>|390<br>~~(EN~~<br>~~ee~~<br>|585<br>~~(EN~~<br>~~ee~~<br>|nC di/dt = 100A/<br>~~QO~~<br>~~ee~~<br>||
|ton<br>~~Ce ~~<br>~~es~~|Forward Turn-On Time<br>~~ID~~<br> ~~ee~~<br>~~DG~~|Intrinsic turn-on time is negligible(turn-on is dominated byLS+LD)<br>~~(ENQO~~<br>~~ee~~<br>~~DG~~|||||
**Notes:**
> Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11)
Limited by TJmax , starting TJ = 25°C, L = 8.1mH, RG = 50, IAS = 5.6A, VGS =10V. Part not recommended for use above this value. Pulse width 1.0ms; duty cycle 2%.
- Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance.
- This value determined from sample failure population. starting TJ = 25°C, L = 8.1mH, RG = 50, IAS = 5.6A, VGS =10V.
- When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994
- R is measured at TJ approximately 90°C
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100<br>VGS<br>TOP 15V<br>10V<br>8.0V<br>7.5V<br>10 7.0V<br>6.5V<br>6.0V<br>BOTTOM 5.5V<br>1<br>0.1<br>5.5V<br>60µs PULSE WIDTH<br>Tj = 25°C<br>0.01<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig. 1 Typical Output Characteristics<br>100<br>f{___ |__|<br>TJ = 175°C<br>10 ee<br>Anu<br>TJ = 25°C<br>V DS = 50V<br>60µs PULSE WIDTH<br>1.0 /<br>4 5 6 7 8 9 10<br>VGS, Gate-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>
**Fig. 3** Typical Transfer Characteristics
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100<br>VGS<br>TOP 15V<br>10V<br>8.0V<br>7.5V<br>7.0V<br>6.5V<br>10 6.0V<br>BOTTOM 5.5V<br>ZA<br>5.5V<br>1<br> 60µs PULSE WIDTH<br>Tj = 175°C<br>0.1<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig. 2 Typical Output Characteristics<br>16<br>14<br>TJ = 25°C<br>12<br>“<br>10<br>po<br>C= 8<br>Hoi<br>6 TJ = 175°C<br>4<br>VDS = 10V<br>2<br>380µs PULSE WIDTH<br>foo<br>Vian<br>0<br>0 1 2 3 4 5 6<br>ID,Drain-to-Source Current (A)<br>ID, Drain-to-Source Current (A)<br>Gfs, Forward Transconductance (S)<br>**----- End of picture text -----**<br>
**Fig. 2** Typical Output Characteristics
**Fig. 4** Typical Forward Transconductance
Vs. Drain Current
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100000 VGS = 0V, f = 1 MHZ 14.0<br>Ciss = C gs + Cgd, C ds SHORTED ID= 5.6A<br>Crss = Cgd 12.0 V DS = 200V<br>10000<br>Coss = Cds + Cgd VDS= 125V<br>fo 10.0 HH V DS = 50V Soy<br>1000 Co Ciss 8.0 A<br>= f/<br>Coss<br>100 Se Crss ET 6.0 Sunn///4n0<br>4.0<br>10 ST HCA= TTT ATH<br>2.0<br>1 TE AE Hl 0.0 yiZEEE ttt LL<br>1 10 100 1000 0 2 4 6 8 10 12 14 16 18<br>VDS, Drain-to-Source Voltage (V) QG, Total Gate Charge (nC)<br>C, Capacitance (pF)<br>VGS, Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>
**Fig 5.** Typical Capacitance vs. Drain-to-Source Voltage
**Fig 6.** Typical Gate Charge vs. Gate-to-Source Voltage
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100<br>T J = 175°C<br>10 TyVA<br>TJ = 25°C<br>VGS = 0V<br>1.0<br>0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1<br>VSD, Source-to-Drain Voltage (V)<br>ISD, Reverse Drain Current (A)<br>**----- End of picture text -----**<br>
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100<br>OPERATION IN THIS AREA<br>LIMITED BY RDS(on)<br>100µsec<br>10<br>1<br>1msec<br>10msec<br>0.1<br>Tc = 25°C<br>DC<br>Tj = 175°C<br>Single Pulse<br>0.01<br>1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>
**Fig. 7** Typical Source-to-Drain Diode Forward Voltage
**Fig 8.** Maximum Safe Operating Area
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10<br>8<br>SIT) 11<br>6<br>CPSC<br>42 SaaPNe Th<br>0 tt tL LA<br>25 50 75 100 125 150 175<br> TC , Case Temperature (°C)<br>ID, Drain Current (A)<br>**----- End of picture text -----**<br>
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3.5<br>ID = 9.3A<br>3.0 VGS = 10V<br>A<br>2.5<br>2.0 HLA<br>1.5 Catoe<br>1.0<br>CAE<br>0.5<br>0.0 AePPLE<br>-60 -40 -20 0 20 40 60 80 100 120 140160 180<br>TJ , Junction Temperature (°C)<br>RDS(on) , Drain-to-Source On Resistance (Normalized)<br>**----- End of picture text -----**<br>
**Fig 9.** Maximum Drain Current Vs. Case Temperature
**Fig 10.** Normalized On-Resistance Vs. Temperature
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10<br>OIE ARIE EHTEL<br>1 D = 0.50 ELT<br>0.20<br>0.10<br>0.1<br>0.05 Fr<br>0.02<br>0.01<br>0.01<br>Some TM UE UT Notes: UI<br>SINGLE PULSE<br>1. Duty Factor D = t1/t2<br>( THERMAL RESPONSE )<br>2. Peak Tj = P dm x Zthjc + Tc<br>0.001 Tl ol GE ae<br>1E-006 1E-005 0.0001 0.001 0.01 0.1<br>t1 , Rectangular Pulse Duration (sec)<br>Thermal Response ( Z thJC ) °C/W<br>**----- End of picture text -----**<br>
**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case
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AUIRFR/U4292 ~~a~~
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15V<br>600<br>VDS L DRIVER ID<br>PL TOP 1.0A<br>500<br>2.2A<br>R G D.U.T + BOTTOM 5.6A<br>- [V][DD] 400<br>. IAS A NCE<br>20V<br>tp 0.01 300<br>“ Eh [7 NIT<br>200<br>Fig 12a. Unclamped Inductive Test Circuit NINE<br>V(BR)DSS 100 CSOT<br>< tp 0 TPES|<br>25 50 75 100 125 150 175<br>Starting TJ , Junction Temperature (°C)<br>EAS , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>
IAS
**Fig 12c.** Maximum Avalanche Energy vs. Drain Current
**Fig 12b.** Unclamped Inductive Waveforms
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Id<br>Vds<br>Vgs<br>:<br>a<br>Vgs(th)<br>oo<br>Qgs1 Qgs2 Qgd Qgodr<br>**----- End of picture text -----**<br>
**Fig 13a.** Gate Charge Waveform
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5.5<br>5.0<br>Perret<br>4.5<br>ESSSURRRaS<br>4.0<br>BERSNSNBZ8<br>3.5 ID = 50µA<br>ID = 250µA<br>3.0 | ID = 1.0mA 4|_ NNN<br>ID = 1.0A<br>2.5 a PL LINS<br>2.0 PET TTT TEEN<br>-75 -50 -25 0 25 50 75 100 125 150 175<br>TJ , Temperature ( °C )<br>VGS(th), Gate threshold Voltage (V)<br>**----- End of picture text -----**<br>
**Fig 14.** Threshold Voltage Vs. Temperature
**Fig 13b.** Gate Charge Test Circuit
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100<br>Duty Cycle = Single Pulse Allowed avalanche Current vs avalanche<br>pulsewidth, tav, assuming Tj = 150°C and<br>Tstart =25°C (Single Pulse)<br>10 Ti jill GA _<br>0.01<br>0.05<br>1 Sense 0.10 ANTIKBa\ cst UTall |<br>Allowed avalanche Current vs avalanche<br>pulsewidth, tav, assuming j = 25°C and<br>Tstart = 150°C.<br>SAUTEemma eal milTT<br>0.1<br>1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01<br>tav (sec)<br>Avalanche Current (A)<br>**----- End of picture text -----**<br>
**Fig 15.** Typical Avalanche Current Vs. Pulse width
## **Notes on Repetitive Avalanche Curves , Figures 15, 16:**
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140<br>TOP Single Pulse<br>120 BOTTOM 1.0% Duty Cycle<br>ID = 5.6A<br>gq<br>100<br>XL<br>MNT<br>80<br>60 CONN<br>40 SSR NNGHESEE<br>20<br>TTP SST<br>0 PEE SSX<br>25 50 75 100 125 150 175<br>Starting TJ , Junction Temperature (°C)<br>EAR , Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>
## **(For further info, see AN-1005 at www.infineon.com)**
1. Avalanche failures assumption:
- Purely a thermal phenomenon and failure occurs at a temperature far in
- excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long as Tjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 12a, 12b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 15, 16).
- tav = Average time in avalanche.
- D = Duty cycle in avalanche = tav ·f
- ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
## **PD (ave) = 1/2 ( 1.3·BV·Iav) =** **T/ ZthJC Iav = 2** **T/ [1.3·BV·Zth]**
**Fig 16.** Maximum Avalanche Energy
**EAS (AR) = PD (ave)·tav**
Vs. Temperature
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## AUIRFR/U4292 ~~lll~~
**Fig 17.** Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
**Fig 18a.** Switching Time Test Circuit
**Fig 18b.** Switching Time Waveforms
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## AUIRFR/U4292 ~~ll~~
**D-Pak (TO-252AA) Package Outline** (Dimensions are shown in millimeters (inches))
## **D-Pak (TO-252AA) Part Marking Information**
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Part Number AUFR4292<br>Date Code<br>IR Logo T éaR YWWA Y= Year<br>WW= Work Week<br><br>XX XX<br>[|sd<br>Lot Code<br>**----- End of picture text -----**<br>
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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**I-Pak (TO-251AA) Package Outline** (Dimensions are shown in millimeters (inches)
## **I-Pak (TO-251AA) Part Marking Information**
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Part Number AUFU4292<br>Date Code<br>IR Logo T éaR YWWA Y= Year<br>WW= Work Week<br><br>XX XX<br>|Sd<br>Lot Code<br>**----- End of picture text -----**<br>
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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**D-Pak (TO-252AA) Tape & Reel Information** (Dimensions are shown in millimeters (inches))
**==> picture [429 x 370] intentionally omitted <==**
**----- Start of picture text -----**<br>
TR TRR TRL<br>16.3 ( .641 ) 16.3 ( .641 )<br>15.7 ( .619 ) 15.7 ( .619 )<br>12.1 ( .476 ) FEED DIRECTION 8.1 ( .318 ) FEED DIRECTION<br>11.9 ( .469 ) 7.9 ( .312 )<br>NOTES :<br>1. CONTROLLING DIMENSION : MILLIMETER.<br>2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).<br>3. OUTLINE CONFORMS TO EIA-481 & EIA-541.<br> 13 INCH<br>16 mm<br>**----- End of picture text -----**<br>
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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AUIRFR/U4292 ~~ateelc~~ **Qualification Information**
|**Qualification Information**|**Qualification Information**|||
|---|---|---|---|
|**Qualification Level**||Automotive<br>(per AEC-Q101)||
|||Comments: This part number(s) passed Automotive qualification. Infineon’s<br>Industrial and Consumer qualification level is granted by extension of the higher<br>Automotive level.||
|**Moisture Sensitivity Level**||D-Pak|MSL1|
|||I-Pak||
|**ESD**|Machine Model|Class M1B (+/- 100V)† <br>AEC-Q101-002||
||Human Body Model|Class H1A (+/- 500V)† <br>AEC-Q101-001||
||Charged Device Model|Class C5 (+/- 2000V)† <br>AEC-Q101-005||
|**RoHS Compliant**||Yes||
† Highest passing voltage.
## **Revision History**
|**Date**|**Comments**|
|---|---|
|9/2/2014|<br>Updated datasheet with IR corporate tempalte.<br><br>Updated SOA curve Fig 8 from "50V" VDSto "250V" on page 4.<br><br>Updated Package outline on page 9 & 10<br><br>Updated orderinginformation to reflect the End-Of-life(EOL)of the option(EOL notice #530)|
|10/12/2015|<br>Updated datasheet with corporate template<br><br>Corrected orderingtable onpage 1.|
## **Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2015 All Rights Reserved.**
## **IMPORTANT NOTICE**
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office (www.infineon.com).
## **WARNINGS**
Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
12
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Updated at March 15, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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