AUIRFR4104
Power MOSFET, N Channel, 40 V, 42 A, 5500 µohm, TO-252 (DPAK), Surface Mount
- Manufacturer: INFINEON
- Product type: Single MOSFETs
- Transistor Polarity:N Channel; Continuous Drain Current Id:42A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0043ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissi
- MSL: MSL 1 - Unlimited
- No. of Pins: 3Pins
- Channel Type: N Channel
- Product Range: -
- Qualification: -
- Power Dissipation: 140W
- Transistor Mounting: Surface Mount
- Rds(on) Test Voltage: 10V
- Transistor Case Style: TO-252 (DPAK)
- Drain Source Voltage Vds: 40V
- Operating Temperature Max: 175°C
- Continuous Drain Current Id: 42A
- Drain Source On State Resistance: 5500µohm
- Gate Source Threshold Voltage Max: 2V
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.561 € |
| Current stock | 10+ |
| Lead time | 30 days |
AUIRFR4104 AUIRFU4104 ~~po~~
**AUTOMOTIVE GRADE**
HEXFET[® ] Power MOSFET
## ~~Cinfineon~~
## **Features**
- Advanced Process Technology
|Low On-Resistance<br>175°C Operating Temperature<br>Fast Switching<br>Repetitive Avalanche Allowed up to Tjmax<br>Lead-Free, RoHS Compliant<br>Automotive Qualified *<br>**Description**<br>Specifically designed for Automotive applications, this HEXFET®<br>Power MOSFET utilizes the latest processing techniques to<br>achieve extremely low on-resistance per silicon area. Additional<br>features of this design are a 175°C junction operating temperature,<br>fast switching speed and improved repetitive avalanche rating .<br>These features combine to make this design an extremely efficient<br>and reliable device for use in Automotive applications and a wide<br>variety of other applications.|**VDSS**<br>**40V**<br>**RDS(on) max.**<br>**5.5m**<br>**ID (Silicon Limited)**<br>**119A**<br>**ID (Package Limited)**<br>**42A**<br>Specifically designed for Automotive applications, this HEXFET®<br>Power MOSFET utilizes the latest processing techniques to<br>achieve extremely low on-resistance per silicon area. Additional<br>features of this design are a 175°C junction operating temperature,<br>fast switching speed and improved repetitive avalanche rating .<br>These features combine to make this design an extremely efficient<br>and reliable device for use in Automotive applications and a wide<br>D-Pak<br>AUIRFR4104<br>**G**<br>**D**<br>**S**<br>Gate<br>Drain<br>Source<br>S<br>G<br>D<br>G<br>I-Pak<br>AUIRFU4104<br>S<br>D<br>D<br>~~——~~<br>~~ee~~<br>~~ee~~|**VDSS**<br>**40V**<br>**RDS(on) max.**<br>**5.5m**<br>**ID (Silicon Limited)**<br>**119A**<br>**ID (Package Limited)**<br>**42A**<br>Specifically designed for Automotive applications, this HEXFET®<br>Power MOSFET utilizes the latest processing techniques to<br>achieve extremely low on-resistance per silicon area. Additional<br>features of this design are a 175°C junction operating temperature,<br>fast switching speed and improved repetitive avalanche rating .<br>These features combine to make this design an extremely efficient<br>and reliable device for use in Automotive applications and a wide<br>D-Pak<br>AUIRFR4104<br>**G**<br>**D**<br>**S**<br>Gate<br>Drain<br>Source<br>S<br>G<br>D<br>G<br>I-Pak<br>AUIRFU4104<br>S<br>D<br>D<br>~~——~~<br>~~ee~~<br>~~ee~~|**VDSS**<br>**40V**<br>**RDS(on) max.**<br>**5.5m**<br>**ID (Silicon Limited)**<br>**119A**<br>**ID (Package Limited)**<br>**42A**<br>Specifically designed for Automotive applications, this HEXFET®<br>Power MOSFET utilizes the latest processing techniques to<br>achieve extremely low on-resistance per silicon area. Additional<br>features of this design are a 175°C junction operating temperature,<br>fast switching speed and improved repetitive avalanche rating .<br>These features combine to make this design an extremely efficient<br>and reliable device for use in Automotive applications and a wide<br>D-Pak<br>AUIRFR4104<br>**G**<br>**D**<br>**S**<br>Gate<br>Drain<br>Source<br>S<br>G<br>D<br>G<br>I-Pak<br>AUIRFU4104<br>S<br>D<br>D<br>~~——~~<br>~~ee~~<br>~~ee~~|
|---|---|---|---|
|**Base part number**<br>**Package Type**<br>**Standard Pack**<br>**Form**|||**Standard Pack**<br>**Orderable Part Number**<br>**Quantity**|
|AUIRFU4104<br>I-Pak<br>Tube|||75<br>AUIRFU4104|
|AUIRFR4104<br>Tube<br>Tape and Reel Left<br>D-Pak|Tape and Reel Left|Tape and Reel Left|75<br>AUIRFR4104<br>3000<br>AUIRFR4104TRL|
## **Absolute Maximum Ratings**
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
|**Symbol**|**Parameter**|**Max.**|**Units**|
|---|---|---|---|
|ID@ TC= 25°C|Continuous Drain Current, VGS@ 10V (Silicon Limited)|119|A|
|ID@ TC= 100°C|Continuous Drain Current, VGS@ 10V (Silicon Limited)|84||
|ID @TC= 25°C|Continuous Drain Current, VGS @10V(Package Limited)|42||
|IDM|Pulsed Drain Current|480||
|PD@TC= 25°C|Maximum Power Dissipation|140|W|
||Linear Derating Factor|0.95|W/°C|
|VGS|Gate-to-SourceVoltage|± 20|V|
|EAS|Single Pulse Avalanche Energy (ThermallyLimited) |145|mJ|
|EAS(Tested)|Single Pulse Avalanche EnergyTested Value|310||
|IAR<br>~~EE~~|Avalanche Current<br>~~EE~~|See Fig.15,16, 12a, 12b<br>~~EE~~|A<br>~~EE~~|
|EAR<br>~~EE~~<br>~~pf~~|Repetitive Avalanche Energy <br>~~EE~~<br>~~pf~~||mJ<br>~~EE~~|
|TJ<br>TSTG<br>~~pf~~|Operating Junction and<br>Storage Temperature Range<br>~~pf~~|-55 to + 175|°C|
|~~pf~~|SolderingTemperature,for 10 seconds(1.6mm from case)<br>~~pf~~|300||
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AUIRFR/U4104
## **Static @ TJ = 25°C (unless otherwise specified)**
|~~es~~|||||||
|---|---|---|---|---|---|---|
|Qg<br>~~es~~|Total Gate Charge|–––|59|89|nC|ID= 42A<br>VDS= 32V<br>VGS= 10V|
|g<br>Qgs<br>~~es~~<br>~~Rs~~|Gate-to-Source Charge|–––|19|–––|||
|Qgd<br>~~Rs~~|Gate-to-Drain Charge|–––|24|–––|||
|gd<br>td(on)<br>~~Rs~~<br>~~——————~~|Turn-On Delay Time<br>~~——————~~|–––<br>~~——————~~|17<br>~~——————~~|–––<br>~~——————~~|ns<br>~~+++},~~<br>~~>~~|VDD= 20V<br>ID= 42A<br>RG= 6.8<br>VGS= 10V|
|d(on)<br>tr<br>~~——————~~<br>~~es~~|Rise Time<br>~~——————~~|–––<br>~~——————~~|69<br>~~——————~~|–––<br>~~——————~~|||
|td(off)<br>~~es~~<br>~~es~~|Turn-Off DelayTime|–––|37|–––|||
|d(off)<br>tf<br>~~es~~<br>~~es~~<br>~~+++},~~|Fall Time<br>~~+++},~~|–––<br>~~+++},~~|36<br>~~+++},~~|–––<br>~~+++},~~|||
|LD<br>~~es~~<br>~~+++},~~|Internal Drain Inductance<br>~~+++},~~|–––<br>~~+++},~~|4.5<br>~~+++},~~|–––<br>~~+++},~~|nH<br>~~+++},~~<br>~~>~~|Between lead,<br>6mm (0.25in.)<br>from package<br>and centerofdie contact<br>~~ee~~|
|LS<br>~~+++},~~<br>~~es~~|Internal Source Inductance<br>~~+++},~~|–––<br>~~+++},~~|7.5<br>~~+++},~~|–––<br>~~+++},~~|||
|Ciss<br>~~+++},~~<br>~~es~~<br>~~es~~<br>~~**e**~~|Input Capacitance<br>~~+++},~~<br>~~nn~~<br>~~**e**ee~~|–––<br>~~+++},~~<br>~~nn~~<br>~~ee~~|2950<br>~~+++},~~<br>~~nn~~<br>~~ee~~|–––<br>~~+++},~~<br>~~nn~~<br>~~ee~~|pF<br>~~+++},~~<br>~~>~~<br>~~ee~~|VGS= 0V<br>VDS= 25V<br>ƒ= 1.0MHz<br>~~ee~~<br>~~PO~~|
|Coss<br>~~es~~<br>~~es~~<br>~~**e**~~|Output Capacitance<br>~~nn~~<br>~~**e**ee~~|–––<br>~~nn~~<br>~~ee~~|660<br>~~nn~~<br>~~ee~~|–––<br>~~nn~~<br>~~ee~~|||
|Crss<br>~~es~~<br>~~es~~<br>~~**e**~~<br>~~es~~|ReverseTransferCapacitance<br>~~nn~~<br>~~**e**ee~~<br>~~ee~~|–––<br>~~nn~~<br>~~ee~~|370<br>~~nn~~<br>~~ee~~|–––<br>~~nn~~<br>~~ee~~|||
|Coss<br>~~es~~<br>~~**e**~~<br>~~es~~<br>~~es~~|Output Capacitance<br>~~**e**ee~~<br>~~ee~~<br>~~es~~|–––<br>~~ee~~|2130<br>~~ee~~|–––<br>~~ee~~||VGS=0V,VDS= 1.0Vƒ= 1.0MHz<br>~~ee~~<br>~~PO~~<br>~~PO~~|
|Coss<br>~~**e**~~<br>~~es ~~<br>~~es~~<br>~~s~~|Output Capacitance<br>~~**e**ee~~<br> ~~ee~~<br>~~es~~|–––<br>~~ee~~|590<br>~~ee~~|–––<br>~~ee~~||VGS =0V, VDS =32V ƒ=1.0MHz<br>~~PO~~<br>~~PO~~<br>~~Po~~|
|Coss eff.<br>~~**e**~~<br>~~es ~~<br>~~s~~|Effective Output Capacitance<br>~~**e**ee~~<br> ~~es~~|–––<br>~~ee~~|850<br>~~ee~~|–––<br>~~ee~~||VGS=0V,VDS=0Vto 32V<br>~~PO~~<br>~~Po~~|
|**Diode Characteristics**<br>~~s~~<br>~~Po~~|||||||
|~~a~~<br>~~4,~~|**Parameter **<br>~~I~~<br>~~4,~~|**Min.**<br>~~I~~<br>~~4,~~|**Typ. M**<br>~~I~~<br>~~4,~~|**. Max.**<br>~~I~~<br>~~4,~~|**Units**<br>~~(~~<br>~~),~~|**Conditions**<br>~~(~~<br>~~),&~~|
|IS<br>~~a~~<br>~~4,~~|Continuous Source Current<br>(Body Diode)<br>~~I~~<br>~~4,~~|–––<br>~~I~~<br>~~4,~~|–––<br>~~I~~<br>~~4,~~|42<br>~~I ~~<br>~~4,~~|A<br> ~~(~~<br>~~),~~<br>~~(D~~|MOSFET symbol<br>showing the<br>integral reverse<br>p-n junction diode.<br>~~(~~<br>~~),&~~|
|ISM<br>~~4,~~<br>~~a~~|Pulsed Source Current<br>(Body Diode)<br>~~4,~~<br>~~I~~|–––<br>~~4,~~<br>~~ID~~|–––<br>~~4,~~<br>~~I~~|480<br>~~4,~~<br>~~I~~|||
|VSD<br>~~4,~~<br>~~a~~|Diode Forward Voltage<br>~~4,~~<br>~~I~~|–––<br>~~4,~~<br>~~ID~~|–––<br>~~4,~~<br>~~I~~|1.3<br>~~4, ~~<br>~~I~~|V<br> ~~),~~<br>~~(D~~|TJ= 25°C,IS= 42A,VGS= 0V<br>~~), &~~|
|trr<br>~~a~~<br>~~9~~<br>~~[$y~~|Reverse Recovery Time<br>~~I ~~<br>~~9~~<br>~~[$y~~<br>~~Ht~~|–––<br> ~~ID ~~<br>~~Ht~~|28<br> ~~I ~~<br>~~Httt~~|42<br> ~~I ~~<br>~~tt~~|ns<br> ~~(D~~<br>~~ttdt~~|TJ= 25°C ,IF= 42A, VDD= 20V<br>nC di/dt = 100A/µs<br>~~dt~~<br>~~_§~~|
|Qrr<br>~~[$y~~|Reverse RecoveryCharge<br>~~[$y~~<br>~~Ht~~|–––<br>~~Ht~~|24<br>~~Httt~~|36<br>~~tt~~|nC di/dt = 100A/<br>~~ttdt~~||
|ton<br>~~[$y~~|Forward Turn-On Time<br>~~[$y~~<br>~~Ht~~|Intrinsic turn-on time is negligible(turn-on is dominated byLS+LD)<br>~~Htttdt~~<br>~~_§~~|||||
**Notes:**
> Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11)
> Limited by TJmax , starting TJ = 25°C, L = 0.16mH, RG = 25, IAS = 42A, VGS =10V. Part not recommended for use above this value. Pulse width 1.0ms; duty cycle 2%.
- Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance.
- This value determined from sample failure population, starting TJ = 25°C, L = 0.16mH, RG = 25, IAS = 42A, VGS =10V.
- When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994
> R is measured at TJ approximately 90°C.
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1000 1000<br> VGS VGS GS<br> TOP 15V TOP 15V<br> 10V 10V<br> 8.0V 8.0V<br> 7.0V 7.0V<br> 6.0V 6.0V<br>100 Z| 5.5V 100 BZ 5.5V<br> 5.0V 5.0V<br>BOTTOM 4.5V BOTTOM 4.5V<br>teal | =<br>4.5V<br>10 10<br>4.5V<br>ames 60µs PULSE WIDTH Get ti 60µs PULSE WIDTH<br>Tj = 25°C Tj = 175°C<br>fiEh<br>1 1<br>0.10 11 1010 100100 0.100 111 101010<br>VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)<br>Fig. 1 Typical Output Characteristics Fig. 2 Typical Output Characteristics<br>120<br>1000<br>TJ = 25°C 100 TJ = 175°C<br>T = 175°C<br>100 te J 80 Pe<br>60<br>TJ = 25°C<br>40<br>10<br>TA<br>(A ee enn<br>20<br>V DS = 20V VDS = 10V<br>380µs PULSE WIDTH<br>60µs PULSE WIDTH Vanesfi<br>0<br>1<br>0 20 40 60 80 100<br>4 6 8 10<br>ID, Drain-to-Source Current (A)<br>VGS, Gate-to-Source Voltage (V)<br>Gfs, Forward Transconductance (S)<br>)<br>ID, Drain-to-Source Current<br>ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>
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1000<br> VGS GS<br> TOP 15V<br> 10V<br> 8.0V<br> 7.0V<br> 6.0V<br>100 BZ 5.5V<br> 5.0V<br>BOTTOM 4.5V<br>=<br>4.5V<br>10<br>Get ti<br>60µs PULSE WIDTH<br>Tj = 175°C<br>1<br>0.100 111 101010 100100<br>VDS, Drain-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>
**Fig. 2** Typical Output Characteristics
**Fig. 4** Typical Forward Trans conductance
**Fig. 3** Typical Transfer Characteristics **Fig. 4** Typical Forward Trans conductance Vs. Drain Current 3 2015-12-1 ~~=~~
## ~~Cinfin eon~~
## AUIRFR/U4104 ~~a~~
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5000 20<br>VGS = 0V, f = 1 MHZ<br>Ciss = C gs + Cgd, C ds SHORTED ID= 42A VDS= 32V<br>4000 Crss = Cgd 16 VDS= 20V<br>TH Coss = Cds + Cgd 6S<br>Ciss<br>3000 12<br>Co aya<br>2000 8<br>LI TTI van<br>Coss<br>1000 4<br>seta Crss ALT | |<br>unl J|<br>0 0 | [|<br>1 10 100 0 20 40 60 80 100<br>VDS, Drain-to-Source Voltage (V) QG Total Gate Charge (nC)<br>VGS, Gate-to-Source Voltage (V)<br>C, Capacitance (pF)<br>**----- End of picture text -----**<br>
**Fig 5.** Typical Capacitance vs. Drain-to-Source Voltage
**Fig 6.** Typical Gate Charge vs. Gate-to-Source Voltage
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1000.0 10000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br>1000<br>[Le :] ee<br>100.0<br>TJ = 175°C<br>100<br>10.0 100µsec<br>cyt] TJ = 25°C 10 eae<br>ff 1msec<br>1.0<br>1<br>Tc = 25°C 10msec<br>VGS = 0V Tj = 175°C<br>Single Pulse<br>0.1 Ppp i 0.1 ee<br>0.0 0.5 1.0 1.5 2.0 0 1 10 100 1000<br>VSD, Source-toDrain Voltage (V) VDS , Drain-toSource Voltage (V)<br>ISD, Reverse Drain Current (A) ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>
**Fig. 7** Typical Source-to-Drain Diode Forward Voltage
**Fig 8.** Maximum Safe Operating Area
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## AUIRFR/U4104 ~~LLL~~
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120 2.0<br>LIMITED BY PACKAGE ID = 42A<br>100 V GS = 10V<br>80 Pt 1.5 ALLELE<br>rt ip<br>60<br>oan Te<br>40 ack? 1.0 LAT<br>20<br>0 FEEPTET er 0.5 ELLELLLEL<br>25 50 75 100 125 150 175 -60 -40 -20 0 20 40 60 80 100 120 140 160 180<br> TC , Case Temperature (°C) TJ , Junction Temperature (°C)<br>Fig 9. Maximum Drain Current Vs. Fig 10. Normalized On-Resistance<br>Case Temperature Vs. Temperature<br>10<br>1<br>D = 0.50<br>0.20<br>0.1 0.10 cn A R1R 1 R2R 2 Ri (°C/W) i (sec)<br>0.05 J J1 1 2 2 C C 0.5067 0.000414<br>0.02 0.01 Ci= Ci= i Ri iRi cco 0.5428 0.004081<br>0.01<br>wert. Kt<br>Notes:<br>=e SINGLE PULSE 1. Duty Factor D = t1/t2 {Ili<br>( THERMAL RESPONSE ) 2. Peak Tj = P dm x Zthjc + Tc<br>Bee<br>0.001<br>EA<br>1E-006 1E-005 0.0001 0.001 0.01 0.1<br>t1 , Rectangular Pulse Duration (sec)<br>ID , Drain Current (A)<br>RDS(on) , Drain-to-Source On Resistance (Normalized)<br>Thermal Response ( Z thJC )<br>**----- End of picture text -----**<br>
**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case
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~~Cinfir~~
## AUIRFR/U4104 ~~__~~
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15V<br>L DRIVER<br>VDS<br>R G D.U.T +<br>- [V][DD]<br>IAS<br>20V<br>i tp Y 0.01<br>**----- End of picture text -----**<br>
**Fig 12a.** Unclamped Inductive Test Circuit
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V(BR)DSS<br>tp ><br>**----- End of picture text -----**<br>
IAS
**Fig 12c.** Maximum Avalanche Energy vs. Drain Current
**Fig 12b.** Unclamped Inductive Waveforms
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Id<br>Vds<br>Vgs<br>Vgs(th)<br>Qgs1 Qgs2 Qgd Qgodr<br>**----- End of picture text -----**<br>
**Fig 13a.** Gate Charge Waveform
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4.0<br>3.0 ID = 250µA<br>2.0<br>1.0<br>-75 -50 -25 0 25 50 75 100 125 150 175<br>TJ , Temperature ( °C )<br>VGS(th) Gate threshold Voltage (V)<br>**----- End of picture text -----**<br>
**Fig 14.** Threshold Voltage Vs. Temperature
**Fig 13b.** Gate Charge Test Circuit
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1000<br>Duty Cycle = Single Pulse<br>Allowed avalanche Current vs<br>100 avalanche pulsewidth, tav<br>0.01 assuming Tj = 25°C due to<br>avalanche losses. Note: In no<br>case should Tj be allowed to<br>0.05<br>exceed Tjmax<br>10 eee |<br>0.10<br>1 = Ee I<br>0.1 Sa<br>1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02<br>tav (sec)<br>Avalanche Current (A)<br>**----- End of picture text -----**<br>
**Fig 15.** Typical Avalanche Current Vs. Pulse width
## **Notes on Repetitive Avalanche Curves , Figures 15, 16:**
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160<br>TOP Single Pulse<br>BOTTOM 1% Duty Cycle<br>ID = 42A<br>120<br>TC<br>80<br>PNG<br>40<br>NU<br>TESS<br>0<br>25 50 75 100 125 150 175<br>Starting TJ , Junction Temperature (°C)<br>EAR , Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>
**Fig 16.** Maximum Avalanche Energy Vs. Temperature
## **(For further info, see AN-1005 at www.infineon.com)**
1. Avalanche failures assumption:
- Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long as Tjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 12a, 12b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 15, 16).
- tav = Average time in avalanche.
- D = Duty cycle in avalanche = tav ·f
- ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
## **PD (ave) = 1/2 ( 1.3·BV·Iav) =** **T/ ZthJC Iav = 2** **T/ [1.3·BV·Zth]**
**EAS (AR) = PD (ave)·tav**
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AUIRFR/U4104
**Fig 17.** Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
**Fig 18a.** Switching Time Test Circuit
**Fig 18b.** Switching Time Waveforms
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## ~~Cinfin eon~~
**D-Pak (TO-252AA) Package Outline** (Dimensions are shown in millimeters (inches))
## **D-Pak (TO-252AA) Part Marking Information**
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Part Number AUFR4104<br>Date Code<br>IR Logo T éaR YWWA Y= Year<br>WW= Work Week<br><br>XX XX<br>[|sd<br>Lot Code<br>**----- End of picture text -----**<br>
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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AUIRFR/U4104 ~~LLL~~
**I-Pak (TO-251AA) Package Outline** (Dimensions are shown in millimeters (inches)
## ~~Cinfineon~~
## **I-Pak (TO-251AA) Part Marking Information**
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Part Number AUFU4104<br>Date Code<br>IR Logo T é4R YWWA Y= Year<br>WW= Work Week<br><br>XX XX<br>[|<br>Lot Code<br>**----- End of picture text -----**<br>
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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AUIRFR/U4104 ~~LLL~~
**D-Pak (TO-252AA) Tape & Reel Information** (Dimensions are shown in millimeters (inches))
**==> picture [429 x 370] intentionally omitted <==**
**----- Start of picture text -----**<br>
TR TRR TRL<br>16.3 ( .641 ) 16.3 ( .641 )<br>15.7 ( .619 ) 15.7 ( .619 )<br>12.1 ( .476 ) FEED DIRECTION 8.1 ( .318 ) FEED DIRECTION<br>11.9 ( .469 ) 7.9 ( .312 )<br>NOTES :<br>1. CONTROLLING DIMENSION : MILLIMETER.<br>2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).<br>3. OUTLINE CONFORMS TO EIA-481 & EIA-541.<br> 13 INCH<br>16 mm<br>**----- End of picture text -----**<br>
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
11
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~~i~~
## AUIRFR/U4104 ~~me~~
## **Qualification Information**
|**Qualification Information**|**Qualification Information**|||
|---|---|---|---|
|**Qualification Level**||Automotive<br>(per AEC-Q101)||
|||Comments: This part number(s) passed Automotive qualification. Infineon’s<br>Industrial and Consumer qualification level is granted by extension of the higher<br>Automotive level.||
|**Moisture Sensitivity Level**||D-Pak|MSL1|
|||I-Pak||
|**ESD**|Machine Model|Class M4 (+/- 425V)† <br>AEC-Q101-002||
||Human Body Model|Class H1C (+/-1750V)† <br>AEC-Q101-001||
||Charged Device Model|Class C5 (+/-625V)† <br>AEC-Q101-005||
|**RoHS Compliant**||Yes||
- Highest passing voltage.
## **Revision History**
|**Date**|**Comments**|
|---|---|
|12/1/2015|<br>Updated datasheet with corporate template<br><br>Corrected ordering table on page 1.<br><br>Corrected typo RthJA(PCB Mount)from “40C/W” to “50C/W” onpage 1.|
**Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2015 All Rights Reserved.**
## **IMPORTANT NOTICE**
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office (www.infineon.com).
## **WARNINGS**
Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
12
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Updated at March 10, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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