AUIRFR3806TRL

AUIRFR3806 ~~—~~ 

**AUTOMOTIVE GRADE** 

## ~~Cinfineon~~ 

HEXFET[® ] Power MOSFET **VDSS 60V RDS(on)            typ. 12.6m**  **max. 15.8m**  ~~———~~ **ID 43A** D S G D-Pak AUIRFR3806 

## **Features** 

- Advanced Process Technology 

- Ultra Low On-Resistance 

- Dynamic dV/dT Rating 

- 175°C Operating Temperature 

- Fast Switching 

- Repetitive Avalanche Allowed up to Tjmax 

- Lead-Free, RoHS Compliant 

- Automotive Qualified * 

## **Description** 

Specifically designed for Automotive applications, this HEXFET® G Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.  Additional D-Pak AUIRFR3806 features of this design  are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient **G D S** and reliable device for use in Automotive applications and a wide Gate Drain Source variety of other applications. ~~es~~ **Standard Pack Base part number Package Type Orderable Part Number Form Quantity** Tube 75 AUIRFR3806 AUIRFR3806 D-Pak ~~a~~ Tape and Reel Left 3000 AUIRFR3806TRL **Absolute Maximum Ratings** Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.   These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified. 

|**Symbol**<br>~~———————~~|**Parameter**<br>~~———————~~|**Max.**<br>~~ee~~|**Units**<br>~~ee~~|
|---|---|---|---|
|ID@ TC= 25°C<br>~~———————~~|Continuous Drain Current, VGS@ 10V<br>~~———————~~|43<br>~~ee~~|A<br>~~ee~~|
|ID @TC= 100°C<br>~~———————~~|Continuous Drain Current,VGS @10V<br>~~———————~~|31<br>~~ee~~||
|IDM<br>~~———————~~|Pulsed Drain Current<br>~~———————~~|170<br>~~ee~~||
|PD@TC= 25°C<br>~~———————~~|Maximum Power Dissipation<br>~~———————~~|71<br>~~ee~~|W<br>~~ee~~|
|~~———————~~|Linear Derating Factor<br>~~———————~~|0.47<br>~~ee~~|W/°C<br>~~ee~~|
|VGS|Gate-to-SourceVoltage|± 20|V|
|EAS|Single Pulse Avalanche Energy (ThermallyLimited) |73|mJ|
|IAR|Avalanche Current|25|A|
|EAR|Repetitive Avalanche Energy |7.1|mJ|
|dv/dt|Pead Diode Recoverydv/dt|24|V/ns|
|TJ<br>TSTG<br>~~a~~|Operating Junction and<br>Storage Temperature Range<br>~~a~~|-55  to + 175|°C|
|~~a~~|SolderingTemperature,for 10 seconds(1.6mm from case)<br>~~a~~|300||



## **Thermal Resistance** 

|**Thermal Resistance**|||||
|---|---|---|---|---|
|**Symbol**|**Parameter**|**Typ.**|**Max.**|**Units**|
|RJC|Junction-to-Case|–––|2.12|°C/W|
|RJA|Junction-to-Ambient(PCB Mount) |–––|50||
|RJA|Junction-to-Ambient|–––|110||



HEXFET® is a registered trademark of Infineon. 

***** Qualification standards can be found at www.infineon.com 

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~~Cinfin eon~~ 

AUIRFR3806 ~~LLL~~ 

**Static @ TJ = 25°C (unless otherwise specified)** 

|Qg<br>~~**ee**~~|Total Gate Charge<br>~~es~~|–––<br>~~es~~|22<br>~~es~~|30<br>~~es~~|nC<br>~~fo~~|ID= 25A<br>VDS= 30V<br>VGS= 10V<br>~~fo~~|
|---|---|---|---|---|---|---|
|g<br>Qgs<br>~~**ee**~~<br>~~ee~~|Gate-to-Source Charge<br>~~es~~<br>~~es~~|–––<br>~~es~~<br>~~es~~<br>~~I~~|5.0<br>~~es~~<br>~~es~~|–––<br>~~es~~<br>~~es~~|||
|Qgd<br>~~**ee**~~<br>~~ee~~|Gate-to-Drain Charge<br>~~es~~<br>~~es~~|–––<br>~~es~~<br>~~es~~<br>~~I~~|6.3<br>~~es~~<br>~~es~~|–––<br>~~es~~<br>~~es~~|||
|gd<br>Qsync<br>~~**ee**~~<br>~~ee~~<br>~~Re~~|Total Gate Charge Sync. (Qg -Qgd)<br>~~es~~<br>~~es~~|–––<br>~~es~~<br>~~es~~<br>~~I~~|28.3<br>~~es~~<br>~~es~~|–––<br>~~es~~<br>~~es~~|||
|sync<br>td(on)<br>~~Re~~|ggd<br>Turn-On Delay Time|–––<br>~~I~~|6.3|–––|ns|VDD= 39V<br>ID= 25A<br>RG= 20<br>VGS= 10V|
|d(on)<br>tr<br>~~Re~~<br>~~a~~|Rise Time|–––|40|–––|||
|td(off)|Turn-Off DelayTime|–––|49|–––|||
|d(off)<br>tf<br>~~a~~|Fall Time|–––|47|–––|||
|Ciss<br>~~a~~<br>~~ee~~|Input Capacitance|–––|1150|–––|pF|VGS= 0V<br>VDS= 50V<br>ƒ= 1.0MHz<br>~~PO~~|
|Coss<br>~~ee~~|Output Capacitance|–––|130|–––|||
|Crss<br>~~ee~~<br>~~a~~<br>~~ee~~|ReverseTransferCapacitance|–––|67|–––|||
|Coss eff.(ER)<br>~~ee~~<br>~~ee es~~|Effective Output Capacitance (EnergyRelated)<br>~~es~~|–––|190|–––||VGS=0V,VDS=0Vto48V<br>~~PO~~<br>~~PO~~|
|Coss eff.(TR)<br>~~ee~~<br>~~ee es~~|Effective Output Capacitance  (Time Related)<br>~~es~~|–––|230|–––||VGS =0V, VDS =0V to 48V<br>~~PO~~<br>~~PO~~|
|**Diode Characteristics**<br>~~ee es~~<br>~~PO~~<br>~~po~~|||||||
|~~po~~<br>~~ft)~~|**Parameter **<br>~~po~~<br>~~ft)~~|**Min.**<br>~~po~~<br>~~ft)~~|**Typ. M**<br>~~po~~<br>~~ft)~~|**. Max.**<br>~~po~~<br>~~ft)~~|**Units**<br>~~po~~<br>~~ft)~~|**Conditions**<br>~~po~~<br>~~ee~~|
|IS<br>~~po~~<br>~~ft)~~|Continuous Source Current<br>(Body Diode)<br>~~po~~<br>~~ft)~~|–––<br>~~po~~<br>~~ft)~~|–––<br>~~po~~<br>~~ft)~~|43<br>~~po~~<br>~~ft)~~|A<br>~~po~~<br>~~ft)~~<br>~~a~~|MOSFET symbol<br>showing  the<br>integral reverse<br>p-n junction diode.<br>~~po~~<br>~~ee~~<br>~~aZ~~|
|ISM<br>~~ft)~~<br>~~a~~|Pulsed Source Current<br>(Body Diode)<br>~~ft)~~<br>~~a~~|–––<br>~~ft)~~<br>~~a~~|–––<br>~~ft)~~<br>~~a~~|170<br>~~ft)~~<br>~~a~~|||
|VSD<br>~~ft)~~|Diode Forward Voltage<br>~~ft)~~|–––<br>~~ft)~~|–––<br>~~ft)~~<br>~~ee~~<br>~~CO~~|1.3<br>~~ft)~~<br>~~ee~~<br>~~CO~~|V<br>~~ft)~~<br>~~ee~~<br>~~CO~~|TJ= 25°C,IS= 25A,VGS= 0V<br>~~ee~~|
|trr<br>~~fe~~|Reverse Recovery Time<br>~~fe~~|–––<br>~~a~~<br>~~fe~~|22<br>~~a~~<br>~~ee~~<br>~~fe~~<br>~~CO~~|33<br>~~a~~<br>~~ee~~<br>~~fe~~<br>~~CO~~|ns<br>~~a~~<br>~~ee~~<br>~~fe~~<br>~~CO~~|TJ =25°C<br>~~a~~|
|||–––<br>~~fe~~|26<br>~~ee ~~<br>~~fe~~<br>~~CO~~|39<br> ~~ee~~<br>~~fe~~<br>~~CO~~||TJ= 125°C<br>VR= 51V,|
|Qrr<br>~~CO~~<br>~~ee~~|Reverse Recovery Charge<br>~~CO~~<br>~~ns~~|–––<br>~~CO~~|17<br>~~CO~~<br>~~CO~~|26<br>~~CO~~<br>~~CO~~|nC <br>~~CO~~<br>~~CO~~<br>~~ns~~|TJ= 25°C<br>IF =25A|
|||–––<br>~~CO~~<br>~~ns~~|24<br>~~CO~~<br>~~ns~~|36<br>~~CO~~<br>~~ns~~||TJ= 125°C<br>di/dt=100A/µs|
|~~ee~~|~~ns~~|–––<br>~~ns~~|1.4<br>~~ns~~|–––<br>~~ns~~|A<br>~~ns~~|TJ= 25°C<br>100A/µs|
|ton<br>~~ee~~|Forward Turn-On Time<br>~~ns~~|Intrinsic turn-on time is negligible(turn-on is dominated byLS+LD)<br>~~ns~~|||||



## **Notes:** 

- Repetitive rating;  pulse width limited by max. junction temperature. 

- Limited by TJmax , starting  TJ = 25°C, L = 0.23mH, RG = 25, IAS = 25A, VGS =10V. Part not recommended for use above this value. 

-  ISD  25A, di/dt  1580A/µs, VDD V(BR)DSS, TJ  175°C. 

- Pulse width 400µs; duty cycle  2%. 

-  Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. 

-  Coss eff. (ER) is a fixed capacitance that gives the same energy as  Coss while VDS is rising from 0 to 80% VDSS. 

- When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994 

- R is measured at TJ approximately 90°C. 

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AUIRFR3806 

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1000<br>1000<br>VGS<br>VGS<br>TOP           15V<br>TOP           15V<br>10V<br>10V<br>8.0V<br>8.0V<br>6.0V<br>6.0V<br>5.5V<br>5.5V<br>5.0V<br>100 4.8V 100 5.0V 4.8V<br>BOTTOM 4.5V<br>BOTTOM 4.5V<br>4.5V<br>10 10 =<br>4.5V<br>60µs PULSE WIDTH 60µs PULSE WIDTH<br>Tj = 25°C Tj = 175°C<br>1<br>1<br>0.1 1 10 100 0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V) iar ai VDS, Drain-to-Source Voltage (V) Seen<br>Fig. 1  Typical Output Characteristics  Fig. 2  Typical Output Characteristics<br>2.5<br>1000 ID = 25A<br>V GS  = 10V<br>2.0<br>100 - tL<br>TJ = 175°C 1.5<br>10 HOE a<br>TJ = 25°C<br>1.0<br>1 A an<br>VDS = 25V<br>60µs PULSE WIDTH<br>0.5<br>0.1<br>-60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>2 3 4 5 6 7 8 9<br>Pianaee act<br>TJ , Junction Temperature (°C)<br>VGS, Gate-to-Source Voltage (V)<br>Fig. 3  Typical Transfer Characteristics Fig. 4  Normalized On-Resistance vs. Temperature<br>10000 12.0<br>VCGS  iss    = C = 0V,       f = 1 MHZgs  + Cgd,  Cds  SHORTED ID= 25A<br>C rss    = C gd  10.0 V DS = 48V LE<br>Coss   = Cds  + Cgd VDS= 30V<br>1000 Ciss 8.0 V DS = 12V<br>Coss<br>6.0<br>Crss<br>100 4.0<br>2.0<br>Bll<br>10 0.0<br>1 10 100 0 5 10 15 20 25<br>Ei<br>VDS, Drain-to-Source Voltage (V)  QG,  Total Gate Charge (nC)<br>Fig 5.  Typical Capacitance vs. Drain-to-Source Voltage<br>Fig 6.  Typical Gate Charge vs. Gate-to-Source Voltage<br>3  2015-11-23<br>MO<br>VGS, Gate-to-Source Voltage (V)<br>C, Capacitance (pF)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig. 4** Normalized On-Resistance vs. Temperature 

**Fig 6.** Typical Gate Charge vs. Gate-to-Source Voltage 

AUIRFR3806 ~~oe~~ 

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1000 1000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br>100 100 100µsec<br>T J  = 175°C 1msec<br>10 10<br>TJ = 25°C<br>fi 10msec<br>| Bel<br>1 1<br>Tc = 25°C<br>DC<br>Tj = 175°C<br>VGS = 0V Single Pulse<br>0.1 th 0.1 AY<br>0.0 0.5 1.0 1.5 2.0 1 10 100<br>VSD, Source-to-Drain Voltage (V) VDS, Drain-to-Source Voltage (V)<br>Fig. 7   Typical Source-to-Drain Diode  Forward Voltage  Fig 8.   Maximum Safe Operating Area<br>45 80<br>Id = 5mA<br>40<br>35 SSS 75 Wu<br>30<br>25<br>BSH 70 TTI<br>20<br>PF | | | XN | rT<br>15<br>BEEN 65 (TAIT<br>10<br>pF | tt tT KT 7<br>5<br>PEEEEN AIIIIITHTT<br>0 60<br>| | | | | A<br>25 50 75 100 125 150 175 -60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>TJ , Temperature ( °C )<br> TC , Case Temperature (°C)<br>Fig. 9   Maximum Drain Current vs. Case Temperature  Fig 10.  Drain-to-Source Breakdown Voltage<br>0.4 300<br>ID<br>0.3 TOP         2.8A<br>250<br>5.1A<br>0.3 BOTTOM 25A<br>200 MENL<br>0.2<br>150<br>0.2 NEELTT<br>100<br>0.1 NATE<br>0.1 50<br>SSS<br>0.0 0 LT TESS<br>-10 0 10 20 30 40 50 60 70<br>25 50 75 100 125 150 175<br>Starting TJ , Junction Temperature (°C)<br>ID,  Drain-to-Source Current (A)<br>ID,  Drain Current (A)<br>ISD, Reverse Drain Current (A)<br>EAS , Single Pulse Avalanche Energy (mJ)<br>Energy (µJ)<br>V(BR)DSS, Drain-to-Source Breakdown Voltage (V)<br>**----- End of picture text -----**<br>


**Fig. 7** Typical Source-to-Drain Diode  Forward Voltage 

**Fig 8.** Maximum Safe Operating Area 

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0.4<br>0.3<br>0.3<br>0.2<br>0.2<br>0.1<br>0.1<br>0.0<br>-10 0 10 20 30 40 50 60 70<br>VDS, Drain-to-Source Voltage (V)<br>Energy (µJ)<br>**----- End of picture text -----**<br>


**Fig. 11** Typical COSS Stored Energy 

**Fig 12.** Maximum Avalanche Energy vs. Drain Current 

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~~Cinfineon~~ 

AUIRFR3806 ~~LLL~~ 

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10<br>1 D = 0.50 LOL<br>0.20 TSS R1R1 R2R2 R3 R 3 Ri (° cr C/W)  i (sec)<br>0.1 P| 0.010.020.10 0.05 |  J  J1 Ci1 Ci = rr  = i  Ri iRi  2 2  3 3  CC 0.6086  0.9926  0.001228  0.00026<br>0.5203  0.00812<br>0.01 P|ssesii:caillllpia ToL]aCon<br>Notes:<br>SINGLE PULSE<br>1. Duty Factor D = t1/t2<br>( THERMAL RESPONSE )<br>2. Peak Tj = P dm x Zthjc + Tc<br>ae<br>0.001<br>1E-006 Tr 1E-005 cll 0.0001 CUE 0.001 oo 0.01 0.1<br>t1 , Rectangular Pulse Duration (sec)<br>Fig 13.   Maximum Effective Transient Thermal Impedance, Junction-to-Case<br>100<br>Duty Cycle = Single Pulse<br>0.01 Allowed avalanche Current vs avalanche<br>pulsewidth, tav, assuming  Tj = 150°C and<br>10 =H || | Tstart =25°C (Single Pulse)<br>0.05<br>an Sa “4 oon<br>0.10<br>1 FNiii vag Se A |<br>CVI Allowed avalanche Current vs avalanche  AT) TTT TTT<br>pulsewidth, tav, assuming   j = 25°C and<br>Tstart = 150°C.<br>P APO micAil<br>0.1<br>1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01<br>tav (sec)<br> thJC ) °C/W<br>Thermal Response ( Z<br>Avalanche Current (A)<br>**----- End of picture text -----**<br>


**Fig 14.** Typical Avalanche Current Vs. Pulse width 

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80<br>TOP          Single Pulse<br>BOTTOM   1.0% Duty Cycle<br>ID = 25A<br>60<br>40<br>ATT<br>20<br>HSU<br>LESS<br>0<br>25 50 75 100 125 150 175<br>Starting TJ , Junction Temperature (°C)<br>EAR , Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


## **Notes on Repetitive Avalanche Curves , Figures 14, 15:** 

**(For further info, see AN-1005 at www.infineon.com)** 

1. Avalanche failures assumption: 

   - Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 

2. Safe operation in Avalanche is allowed as long as Tjmax is not exceeded. 

3.  Equation below based on circuit and waveforms shown in Figures 22a, 22b. 

4.  PD (ave) = Average power dissipation per single avalanche pulse. 

5.  BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 

6.  Iav = Allowable avalanche current. 

7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 13, 14). 

   - tav = Average time in avalanche. 

   - D = Duty cycle in avalanche =  tav ·f 

   - ZthJC(D, tav) = Transient thermal resistance, see Figures 13) 

## **PD (ave) = 1/2 ( 1.3·BV·Iav) =**  **T/ ZthJC Iav = 2**  **T/ [1.3·BV·Zth]** 

**Fig 15.** Maximum Avalanche Energy Vs. Temperature 

**EAS (AR) = PD (ave)·tav** 

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4.0 14<br>IF = 17A<br>3.5 12 V R  = 51V<br>ETRE TT<br>TJ = 25°C<br>10<br>3.0 TJ = 125°C<br>PASS TLDS 8 ae<br>2.5 I D  = 50µA<br>I D  = 250µA 6<br>2.0 ID = 1.0mA<br>ID = 1.0A Zas\NSE 4 Sa<br>1.5<br>2<br>1.0 TE LLLEEELN-LLLNN || 0 oe7T[|[ [|<br>-75 -50 -25 0 25 50 75 100 125 150 175 200 0 200 400 600 800 1000<br>TJ , Temperature ( °C ) diF /dt (A/µs)<br>VGS(th), Gate threshold Voltage (V)<br>IRR (A)<br>**----- End of picture text -----**<br>


**Fig 16.** Threshold Voltage vs. Temperature 

**Fig. 17** - Typical Recovery Current vs. dif/dt 

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14<br>IF = 25A<br>12 V R  = 51V<br>TJ = 25°C<br>10<br>TJ = 125°C<br>| HeeTI<br>8<br>6<br>4<br>tet<br>2 PTT<br>A<br>0<br>0 200 400 600 800 1000<br>diF /dt (A/µs)<br>IRR (A)<br>**----- End of picture text -----**<br>


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260<br>IF = 17A<br>VR = 51V<br>210<br>TJ = 25°C<br>TJ = 125°C<br>160<br>gySnr,<br>110<br>HE<br>60<br>y<br>10 eT]<br>0 200 400 600 800 1000<br>diF /dt (A/µs)<br>QRR (nC)<br>**----- End of picture text -----**<br>


**Fig. 18** - Typical Recovery Current vs. dif/dt 

**Fig. 19** - Typical Stored Charge vs. dif/dt 

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260<br>IF = 25A<br>VR = 51V<br>210<br>TJ = 25°C<br>TJ = 125°C<br>ar|<br>160 4<br>|<br>110 | LY<br>60<br>aaean<br>P26<br>10<br>0 200 400 600 800 1000<br>diF /dt (A/µs)<br>QRR (nC)<br>**----- End of picture text -----**<br>


**Fig. 20** - Typical Stored Charge vs. dif/dt 

6 ~~=~~ 

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~~Cinfi~~ 

## AUIRFR3806 ~~_~~ 

**Fig 20.** Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs 

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15V<br>L DRIVER<br>VDS<br>RG D.U.T +<br>- [V][DD]<br>JL IAS<br>20V<br>a tp ie Y 0.01<br>**----- End of picture text -----**<br>


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V(BR)DSS<br>< tp ><br>IAS<br>**----- End of picture text -----**<br>


**Fig 21a.** Unclamped Inductive Test Circuit 

**Fig 21b.** Unclamped Inductive Waveforms 

**Fig 22a.** Switching Time Test Circuit 

**Fig 22b.** Switching Time Waveforms 

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Id<br>Vds<br>Vgs<br>Vgs(th)<br>{<br>fi !! ff Hi '<br>Qgs1 Qgs2 Qgd Qgodr<br>**----- End of picture text -----**<br>


**Fig 23a.** Gate Charge Test Circuit 

**Fig 23b.** Gate Charge Waveform 

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AUIRFR3806 ~~LLL~~ 

## ~~Cinfin eon~~ 

**D-Pak (TO-252AA) Package Outline** (Dimensions are shown in millimeters (inches)) 

## **D-Pak (TO-252AA) Part Marking Information** 

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Part Number  AUFR3806<br>Date Code<br>IR Logo  T éaR YWWA  Y= Year<br>WW= Work Week<br><br>XX         XX<br>[|sd<br>Lot Code<br>**----- End of picture text -----**<br>


Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 

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AUIRFR3806 ~~LLL~~ 

**D-Pak (TO-252AA) Tape & Reel Information** (Dimensions are shown in millimeters (inches)) 

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TR TRR TRL<br>16.3 ( .641 ) 16.3 ( .641 )<br>15.7 ( .619 ) 15.7 ( .619 )<br>12.1 ( .476 ) FEED DIRECTION 8.1 ( .318 ) FEED DIRECTION<br>11.9 ( .469 ) 7.9 ( .312 )<br>NOTES :<br>1.  CONTROLLING DIMENSION : MILLIMETER.<br>2.  ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).<br>3.  OUTLINE CONFORMS TO EIA-481 & EIA-541.<br>  13 INCH<br>16 mm<br>**----- End of picture text -----**<br>


NOTES : 

1.  CONTROLLING DIMENSION : MILLIMETER. 

2.  ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 

3.  OUTLINE CONFORMS TO EIA-481 & EIA-541. 

NOTES : 

1. OUTLINE CONFORMS TO EIA-481. 

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 

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AUIRFR3806 ~~ie»&»&»«=€=5peEe°°~~ **Qualification Information** 

|**Qualification Information**|**Qualification Information**|||
|---|---|---|---|
|**Qualification Level**||Automotive<br>(per AEC-Q101)||
|||Comments: This part number(s) passed Automotive qualification. Infineon’s<br>Industrial and Consumer qualification level is granted by extension of the higher<br>Automotive level.||
|**Moisture Sensitivity Level**||D-Pak|MSL1|
|**ESD**|Machine Model|Class M3 (+/- 250V)† <br>AEC-Q101-002||
||Human Body Model|Class H1A (+/- 500V)† <br>AEC-Q101-001||
||Charged Device Model|Class C5 (+/- 2000V)† <br>AEC-Q101-005||
|**RoHS Compliant**||Yes||



†  Highest passing voltage. 

## **Revision History** 

|**Date**|**Comments**|
|---|---|
|11/23/2015|<br>Updated datasheet with corporate template<br><br>Corrected ordering table on page 1.<br><br>Corrected typo on test condition Coss eff. VDSfrom “60V” to “48V” on page 2.<br><br>Updated typo on the fig.19 and fig.20, unit of y-axis from "A" to "nC" on page 6.<br><br>Corrected typo from Rthcs to RthJA (PCB Mount) on page 1.<br><br>Corrected typo RthJA from “62C/W” to “110C/W” onpage 1.|



**Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2015 All Rights Reserved.** 

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2015-11-23