AUIRFR3710Z
Power MOSFET, N Channel, 100 V, 42 A, 0.015 ohm, TO-252 (DPAK), Surface Mount
- Manufacturer: INFINEON
- Product type: Single MOSFETs
- No. of Pins: 3Pins
- Channel Type: N Channel
- Power Dissipation: 140W
- Transistor Mounting: Surface Mount
- Transistor Polarity: N Channel
- Power Dissipation Pd: 140W
- Rds(on) Test Voltage: 10V
- On Resistance Rds(on): 0.015ohm
- Transistor Case Style: TO-252 (DPAK)
- Drain Source Voltage Vds: 100V
- Operating Temperature Max: 175°C
- Continuous Drain Current Id: 42A
- Drain Source On State Resistance: 0.015ohm
- Gate Source Threshold Voltage Max: 2V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 0.887 € |
| Current stock | 10+ |
| Lead time | 30 days |
PD - 97451
## **AUTOMOTIVE GRADE**
## AUIRFR3710Z
HEXFET[®] Power MOSFET
## **Features**
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D<br>V(BR)DSS 100V<br>RDS(on) max. 18m Ω<br>G<br>ID (Silicon Limited) 56A<br>S ID (Package Limited) 42A<br>.<br>¢ [t]<br>G<br>D-Pak<br>AUIRFR3710Z<br>G D S<br>Gate Drain Source<br>**----- End of picture text -----**<br>
Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified *
## **Description**
Specifically designed for Automotive applications, this HEXFET[®] Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
## **Absolute Maximum Ratings**
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
|~~a~~<br>~~es~~|~~Re~~|~~[I~~||
|---|---|---|---|
|~~a~~<br>~~es~~<br>~~—~~|**Parameter**<br>~~RennnnnnN~~<br>~~———_————————~~|**Max.**<br>~~nnnnnnN~~<br>~~[I~~<br>~~———_————————~~|**Units**<br>~~nnnnnnN~~|
|ID @TC= 25°C<br>~~a~~<br>~~es~~<br>~~es~~<br>~~—~~|Continuous Drain Current,VGS@ 10V(Silicon Limited)<br>~~Re~~<br>~~nn~~<br>~~———_————————~~|56<br><br>~~[I~~<br>~~nn~~<br>~~———_————————~~|A<br><br>~~GO~~|
|ID @TC= 100°C <br>~~es~~<br>~~es~~<br>~~—~~|Continuous Drain Current,VGS@ 10V<br>~~nn~~<br>~~———_————————~~|39<br>~~[I~~<br>~~nn~~<br>~~———_————————~~||
|ID @TC= 25°C<br>~~es~~<br>~~—~~<br>~~es~~|Continuous Drain Current,VGS@ 10V(Package Limited)<br>~~nn~~<br>~~———_————————~~<br>~~©nn~~|42<br>~~nn~~<br>~~———_————————~~||
|IDM<br>~~—~~<br>~~es~~<br>~~es~~|PulsedDrainCurrent<br>~~———_————————~~<br>~~©nn~~<br>~~GO~~|220<br>~~———_————————~~<br>~~GO~~||
|PD @TC= 25°C<br>~~—~~<br>~~es~~<br>~~es~~|Power Dissipation<br>~~———_————————~~<br>~~© nn~~<br>~~GO~~|140<br>~~———_————————~~<br>~~GO~~|W<br>~~GO~~|
|~~es~~<br>~~GO~~|Linear DeratingFactor<br>~~GO~~<br>~~GO~~|0.95<br>~~GO~~<br>~~GO~~|W/°C<br>~~GO~~<br>~~GO~~|
|VGS<br>~~GO~~<br>~~GO~~|Gate-to-Source Voltage<br>~~GO~~<br>~~GO~~|± 20<br>~~GO~~<br>~~GO~~|V<br>~~GO~~<br>~~GO~~|
|EAS<br>~~GO~~<br>~~Se~~|SinglePulseAvalancheEnergy (ThermallyLimited)<br>~~GO~~<br>~~Se~~|150<br>~~GO~~<br>~~Se~~|mJ<br>~~GO~~<br>~~Se~~|
|EAS(tested)<br>~~Se~~<br>~~a~~|Single Pulse Avalanche EnergyTested Value<br>~~Se~~<br>~~©~~|200<br>~~Se~~||
|IAR|Avalanche Current|See Fig.12a, 12b, 15, 16|A|
|EAR<br>~~NS~~|Repetitive Avalanche Energy<br>~~NS~~||mJ|
|TJ<br>TSTG<br>~~NS~~<br>~~ee~~|Operating Junction and<br>Storage Temperature Range<br>~~NS~~<br>~~ee~~|-55 to + 175<br>~~ee~~|°C<br>~~ee~~|
|~~ee~~|SolderingTemperature,for 10 seconds (1.6mm fromcase )<br>~~ee~~|300<br>~~ee~~||
HEXFET[®] is a registered trademark of International Rectifier.
***** Qualification standards can be found at http://www.irf.com/
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**Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)**
||**Parameter**|**Min.**|**Typ.**|**Max. **|**Units**|**Conditions**|
|---|---|---|---|---|---|---|
|Qg|Total Gate Charge|–––|69|100|nC|VGS= 10V<br>ID= 33A<br>VDS= 80V<br>~~©~~|
|Qgs|Gate-to-Source Charge<br>~~en~~<br>~~es~~|–––<br>~~en~~|15<br>~~en~~|–––<br>~~en~~|||
|Qgd|Gate-to-Drain("Miller")Charge<br>~~es~~|–––|25|–––|||
|td(on)|Turn-On DelayTime<br>~~es~~|–––|14|–––|ns|VDD= 50V<br>ID= 33A<br>RG= 6.8Ω<br>VGS= 10V<br>~~©~~<br>~~©~~|
|tr|Rise Time<br>~~en~~|–––<br>~~en~~|43<br>~~en~~|–––<br>~~en~~|||
|td(off)|Turn-Off DelayTime<br>~~en~~<br>~~en~~|–––<br>~~en~~|53<br>~~en~~|–––<br>~~en~~|||
|tf|Fall Time<br>~~en~~|–––|42|–––|||
|LD|Internal Drain Inductance<br>~~en~~<br>~~Po~~|–––<br>~~Po~~|4.5<br>~~Po~~|–––<br>~~Po~~|nH<br>~~|~~|S<br>D<br>G<br>Between lead,<br>6mm (0.25in.)<br>from package<br>and center of die contact<br>~~©~~<br>~~@~~|
|LS|Internal Source Inductance<br>~~Po~~|–––<br>~~Po~~|7.5<br>~~Po~~|–––<br>~~Po~~|||
|Ciss|Input Capacitance|–––|2930|–––|pF<br>|VGS= 0V<br>VDS= 25V<br>ƒ= 1.0MHz|
|Coss|Output Capacitance<br>~~es~~|–––<br>~~es~~|290<br>~~es~~|–––<br>~~es~~|||
|Crss|Reverse Transfer Capacitance<br>~~es~~|–––<br>~~es~~|180<br>~~es~~|–––<br>~~es~~|||
|Coss|Output Capacitance<br>~~ee~~<br>~~es~~|–––<br>~~ee~~|1200<br>~~ee~~|–––||VGS= 0V, VDS= 1.0V,ƒ= 1.0MHz<br>~~Po~~|
|Coss<br>~~a~~|Output Capacitance<br>~~es~~<br>~~a~~|–––<br>|180<br>|–––<br>||VGS= 0V, VDS= 80V,ƒ= 1.0MHz<br>~~Po~~<br>|
|Cosseff.<br>~~a~~|Effective Output Capacitance<br>~~es~~<br>~~a~~|–––<br>|430<br>|–––<br>||VGS= 0V, VDS= 0V to 80V<br>~~Po~~<br>|
|**Diode Characteristics**<br>~~a~~||~~Osfo~~|||||
||**Parameter**<br>~~es~~|**Min.**<br>~~es~~<br>~~Os~~|**Typ.**<br>~~es~~<br>|**Max. **<br>~~es~~<br>|**Units**<br>~~es~~<br>~~fo~~|**Conditions**<br>~~es~~<br>~~fo~~|
|IS|Continuous Source Current<br>(Body Diode)|–––<br>~~Os~~|–––<br>|56<br>|A<br>~~fo~~<br>~~GO~~|S<br>D<br>G<br>MOSFET symbol<br>showing the<br>integral reverse<br>p-n junction diode.<br>~~fo~~<br>~~(OO~~|
|ISM|Pulsed Source Current<br>(Body Diode)<br>~~ee~~|–––<br>~~Os~~<br>~~ee~~<br>~~GO~~|–––<br><br>~~ee~~<br>~~GO~~|220<br><br>~~ee~~<br>~~GO~~|||
|VSD|Diode Forward Voltage<br>~~RD~~|–––<br>~~Os ~~<br>~~RD~~<br>~~GO~~|–––<br> <br>~~RD~~<br>~~GO~~|1.3<br> <br>~~RD~~<br>~~GO~~<br>~~i~~|V<br> ~~fo~~<br>~~RD~~<br>~~GO~~<br>~~i~~|TJ= 25°C, IS= 33A, VGS= 0V<br>~~fo~~<br>~~RD~~<br>~~(OO~~<br>~~©~~|
|trr|Reverse RecoveryTime<br>~~**a**~~|–––<br>~~GO~~<br>~~**a**~~|35<br>~~GO~~<br>~~**a**~~|53<br>~~GO~~<br>~~**a**~~<br>~~i~~|ns<br>~~GO ~~<br>~~**a**~~<br>~~i~~|TJ= 25°C, IF= 33A, VDD= 50V<br>di/dt = 100A/µs<br> ~~(OO~~<br>~~**a**~~<br>~~©~~|
|Qrr<br>~~a~~|Reverse RecoveryCharge<br>~~**a**~~<br>~~a~~|–––<br>~~**a**~~|41<br>~~**a**~~|62<br>~~**a**~~<br>~~i~~|nC<br>~~**a**~~<br>~~i~~||
|ton<br>~~a~~|Forward Turn-On Time<br>~~a~~|Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)<br>~~i~~<br>~~©~~|||||
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## **Qualification Information[†]**
|**Qualification Information[†]**|**Qualification Information[†]**|||
|---|---|---|---|
|**Qualification Level**||Automotive<br>(per AEC-Q101)††||
|||Comments:<br>This part number(s) passed Automotive qualification.<br>IR’s<br>Industrial and Consumer qualification level is granted by extension of the<br>higher Automotive level.||
|**Moisture Sensitivity Level**||D-PAK|MSL1|
|**ESD**|Machine Model|Class M4<br>AEC-Q101-002||
||Human Body Model|Class H1C<br>AEC-Q101-001||
||Charged Device<br>Model|Class C3<br>AEC-Q101-005||
|**RoHS Compliant**||Yes||
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1000<br>VGS<br>TOP 15V<br>10V<br>6.0V5.0V CE]<br>4.8V<br>4.5V E S<br>4.3V<br>100 BOTTOM 4.0V yeB o ao|<br>vs tte<br>g e<br>10<br>4.0V<br>a ee ee<br>60µs PULSE WIDTH<br>1 aYT Tj = 25°C |<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 1. Typical Output Characteristics<br>1000<br>T TT<br>T = 175°C<br>J<br>100 P P e et<br>Yr | Vel yy | tf ft te et he Cf<br>A<br>10 POPE<br>T = 25°C<br>J<br>ro] fF 7 [| 7 7 fT fT TT TT fT fT Tf<br>Yr] | | ff | | ft ft ft ft ft fT<br>VDS = 25V<br>60µs PULSE WIDTH<br>1.0 PELE oo<br>2 3 4 5 6 7 8 9 10 11 12 13 14 15 16<br>VGS, Gate-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>) (Α<br>ID, Drain-to-Source Current<br>**----- End of picture text -----**<br>
**Fig 3.** Typical Transfer Characteristics
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1000<br>VGS<br>TOP 15V<br>10V<br>6.0V5.0V el<br>4.8V<br>100 4.5V gp ——<br>4.3V<br>BOTTOM 4.0V >ea<br>CS<br>y = 4.0V enone<br>10 | A<br>1<br>S e<br>60µs PULSE WIDTH<br>Tj = 175°C<br>0.1 SdPCIE oil<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>
**Fig 2.** Typical Output Characteristics
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100<br>pean<br>80 TJ = 25°C<br>:<br>60<br>‘<br>7 Pal T = 175°C =<br>J<br>40 |Wi Am -<br>20<br>VDS = 10V<br>0 Zar<br>0 10 20 30 40 50 60 70 80<br>ID,Drain-to-Source Current (A)<br>Gfs, Forward Transconductance (S)<br>**----- End of picture text -----**<br>
**Fig 4.** Typical Forward Transconductance vs. Drain Current
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12.0<br>ID= 33AD= 33A= 33A<br>10.0 VDS= 80VDS= 80V= 80V<br>be VDS= 50VDS= 50V= 50V<br>8.0 VDS= 20VDS= 20V= 20V<br>6.0<br>L L LYY |<br>4.0<br>2.0<br>E T<br>0.0<br>EY EE EE<br>0 10 20 30 40 50 60 70 80<br> QG Total Gate Charge (nC)<br>VGS, Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>
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100000 12.0<br>VCGS iss = C = 0V, f = 1 MHZgs + Cgd, C ds SHORTED ID= 33AD= 33A= 33A<br>Crss = Cgd 10.0 VDS= 80VDS= 80V= 80V<br>10000 | Coss = Cds + Cgd be VDS= 50VDS= 50V= 50V<br>8.0 VDS= 20VDS= 20V= 20V<br>Ciss<br>1000 6.0<br>i L L LYY |<br>C<br>oss<br>C 4.0<br>rss<br>100<br>2.0<br>FAH E T<br>10 0.0<br>EY EE EE<br>1 10 100 0 10 20 30 40 50 60 70 80<br>VDS, Drain-to-Source Voltage (V) QG Total Gate Charge (nC)<br>Fig 5. Typical Capacitance vs. Fig 6. Typical Gate Charge vs.<br>Drain-to-Source Voltage Gate-to-Source Voltage<br>1000.00 1000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br>100.00 100<br>T = 175°C<br>J<br>100µsec<br>10.00 10<br>T = 25°C 1msec<br>J<br>1.00 1<br>i a gee a es Tc = 25°C<br>Tj = 175°C 10msec<br>7 VGS = 0V Single Pulse ii ol<br>0.10 0.1<br>0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 1 10 100 1000<br>VSD, Source-to-Drain Voltage (V) VDS, Drain-to-Source Voltage (V)<br>C, Capacitance(pF)<br>VGS, Gate-to-Source Voltage (V)<br>ISD, Reverse Drain Current (A) ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>
**Fig 7.** Typical Source-Drain Diode Forward Voltage
**Fig 8.** Maximum Safe Operating Area
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60 3.0<br>ID = 56A<br>50 Limited By Package VGS = 10V<br>C T 2.5 T THTTTT TITY.<br>_ SaaeneeP<br>40 measeas T TA<br>2.0<br>30 Py TXT\XT\\ I. P SELEEGeeeenyane TT EET AT<br>1.5<br>PONE)ONE) H E<br>20<br>1.0<br>10<br>p f tt IN\\ Ce OAt<br>0 0.5<br>Pittitt TA aT S TTeET [ET]<br>25 50 75 100 125 150 175 -60 -40 -20 0 20 40 60 80 100 120 140 160 180<br> TC , Case Temperature (°C) TJ , Junction Temperature (°C)<br>Fig 9. Maximum Drain Current vs. Fig 10. Normalized On-Resistance<br>Case Temperature vs. Temperature<br>10<br>1 A |<br>— O D = 0.50 Oo<br>0.20 rt tt<br>0.1 Ce 0.10 OLE yO<br>0.05 R1 R1 R2 R2 R3R3 Ri (°C/W) τ i (sec)<br>0.01 = 0.020.01 S e τ J τ J τ 1 τ 1 τ 2 τ 2 τ 3 τ 3 τ C τ 0.576 0.0005400.249 0.001424<br>Ci= τ i / Ri 0.224 0.007998<br>Ci i / Ri<br>0.001 SINGLE PULSE<br>( THERMAL RESPONSE ) Notes:<br>e a Oi<br>1. Duty Factor D = t1/t2<br>2. Peak Tj = P dm x Zthjc + Tc<br>a ee eee l<br>0.0001<br>1E-006 1E-005 0.0001 0.001 0.01 0.1<br>t1 , Rectangular Pulse Duration (sec)<br>RDS(on) , Drain-to-Source On Resistance (Normalized)<br>Thermal Response ( Z thJC )<br>**----- End of picture text -----**<br>
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60<br>50 Limited By Package<br>C T<br>_<br>40 measeas<br>30 Py TXT\XT\\ I.<br>PONE)ONE)<br>20<br>10<br>p f tt IN\\<br>0<br>Pittitt TA<br>25 50 75 100 125 150 175<br> TC , Case Temperature (°C)<br>ID, Drain Current (A)<br>**----- End of picture text -----**<br>
**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case
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700<br>ID<br>E L<br>600 TOP 3.4A<br>4.8A<br>500400 K A EE ELE BOTTOM 33A<br>300<br>E XGRRERREEEE<br>200<br>X N<br>100<br>a<br>UL LESS<br>0<br>25 50 75 100 125 150 175<br>Starting TJ , Junction Temperature (°C)<br>EAS , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>
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15V<br>VDS L DRIVER<br>RG D.U.T +<br>. - [V][DD]<br>IAS<br>20VVGS<br>tp 0.01 Ω<br>ely<br>**----- End of picture text -----**<br>
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Fig 12a. Unclamped Inductive Test Circuit<br>V(BR)DSS<br>— tp<br>/<br>IAS<br>**----- End of picture text -----**<br>
**Fig 12c.** Maximum Avalanche Energy vs. Drain Current
**Fig 12b.** Unclamped Inductive Waveforms
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QG<br>10V [.]<br>a QGS \* QGD ><br>VG<br>Charge<br>E<br>Fig 13a. Basic Gate Charge Waveform<br>L<br>VCC<br>DUT<br>0 = |<br>1K<br>**----- End of picture text -----**<br>
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4.0<br>**----- End of picture text -----**<br>
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3.0<br>E R LE<br>ID = 250µA<br>N T<br>2.0 E LLEN<br>L LTE TENG<br>VCC<br>1.0<br>| -75 LE -50 -25 0 E 25 50 75 ELL 100 125 150 175 | 200<br>TJ , Temperature ( °C )<br>VGS(th) Gate threshold Voltage (V)<br>**----- End of picture text -----**<br>
**Fig 13b.** Gate Charge Test Circuit www.irf.com
**Fig 14.** Threshold Voltage vs. Temperature
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1000<br>Duty Cycle = Single Pulse<br>po e p<br>100 Allowed avalanche Current vs<br>avalanche pulsewidth, tav<br>0.01<br>assuming ∆ Tj = 25°C due to<br>avalanche losses<br>10 0.05<br>0.10<br>1<br>Dn<br>0.1 ee a ee ell<br>1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01<br>tav (sec)<br>Fig 15. Typical Avalanche Current vs.Pulsewidth<br>200 Notes on Repetitive Avalanche Curves , Figures 15, 16:<br>TOP Single Pulse (For further info, see AN-1005 at www.irf.com)<br>BOTTOM 1% Duty Cycle 1. Avalanche failures assumption:<br>ID = 33A Purely a thermal phenomenon and failure occurs at a<br>150 temperature far in excess of Tjmax. This is validated for<br>o an<br> every part type.<br>2. Safe operation in Avalanche is allowed as long asTjmax is<br>RN TTT not exceeded.<br>100 3. Equation below based on circuit and waveforms shown in<br>B SSSHERREE Figures 12a, 12b.<br>4. PD (ave) = Average power dissipation per single<br>T NS avalanche pulse.<br>5. BV = Rated breakdown voltage (1.3 factor accounts for<br>50 P LN UE voltage increase during avalanche).<br>6. Iav = Allowable avalanche current.<br>o T SS 7. ∆ T = Allowable rise in junction temperature, not to exceed<br>PLETE SSS Tjmax (assumed as 25°C in Figure 15, 16).<br>0 tav = Average time in avalanche.<br>25 50 75 100 125 150 175 D = Duty cycle in avalanche = tav ·f<br>Starting TJ , Junction Temperature (°C) ZthJC(D, tav) = Transient thermal resistance, see figure 11)<br>EAR , Avalanche Energy (mJ)<br>Avalanche Current (A)<br>**----- End of picture text -----**<br>
**Fig 16.** Maximum Avalanche Energy vs. Temperature
**PD (ave) = 1/2 ( 1.3·BV·Iav) =** A **T/ ZthJC Iav = 2** A **T/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav**
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Driver Gate Drive<br>P.W.<br>Period D =<br>D.U.T + {¢{ P.W. —_——— — —_—— Period<br>) [©)] Circuit • Layout Considerations | t V i GS=10V<br>| — - • GroundLow StrayPlane Inductance<br>• CurrentLow LeakageTransformerInductance @ D.U.T. ISD Waveform<br>+<br>Reverse<br>@ - a | = - ° + RecoveryCurrent r Body Diode ForwardCurrent di/dt /\ ——<br>® D.U.T. VDS Waveform Diode Recoverydv/dt ‘<br>00 > VDD<br>ay<br>• Re-Applied<br>• Driver same type as D.U.T. + Voltage Body Diode Forward Drop<br>Re ( 4 • Ispvidt controlledcontrolled byby DutyRg Factor "D" Vop - ® Inductor Curent<br>•<br>D.U.T. - Device Under Test Ripple ≤ 5% e s ISD ee<br>**----- End of picture text -----**<br>
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Fig 17. eak Diode Recovery dv/dt Test Circuit or N-Channel<br>HEXFET ® ower MOSFETs<br>**----- End of picture text -----**<br>
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1 s<br> 0.1 %<br>**----- End of picture text -----**<br>
**Fig 18a.** Switching Time Test Circuit
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VDS<br>90%<br>10%<br>VGS |\< ve >!\ vie<br>td(on) tr td(off) tf<br>**----- End of picture text -----**<br>
**Fig 18b.** Switching Time Waveforms
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## D-Pak Part Marking Information
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TR TRR TRL<br>OOOO > & I oe oo t<br>16.3 ( .641 ) 16.3 ( .641 )<br>15.7 ( .619 ) 15.7 ( .619 )<br>12.1 ( .476 ) FEED DIRECTION 8.1 ( .318 ) FEED DIRECTION<br>11.9 ( .469 ) 7.9 ( .312 )<br>**----- End of picture text -----**<br>
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NOTES :<br>**----- End of picture text -----**<br>
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
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13 INCH<br>16 mm<br>**----- End of picture text -----**<br>
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
Notes: ®© Limited by TJmax , see Fig.12a, 12b, 15, 16 forJmax , see Fig.12a, 12b, 15, 16 for , see Fig.12a, 12b, 15, 16 for
Limited by TJmax , see Fig.12a, 12b, 15, 16 forJmax , see Fig.12a, 12b, 15, 16 for , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance.
Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11).
@ Limited by TJmax, starting TJ = 25°C, L = 0.28mH © RG = 25 Ω , IAS = 33A, VGS =10V. Part not recommended for use above this value. @ @ Pulse width ≤ 1.0ms; duty cycle ≤ 2%. 2) Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS .
This value determined from sample failure population, starting TJ = 25°C, L = 0.28mH, RG = 25 Ω , IAS = 33A, VGS =10V.
@ When mounted on 1" square PCB (FR-4 or G-10 Material) . For recommended footprint and soldering techniques refer to application note #AN-994.
> R θ is measured at TJ approximately 90°C.
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11
## **Ordering Information**
|**Base part**|**Package Type**<br>**Standard Pack**<br>**Complete Part Number**|
|---|---|
|AUIRFR3710Z|**Form**<br>**Quantity**<br>Dpak<br>Tube<br>75<br>AUIRFR3710Z<br>Tape and Reel<br>2000<br>AUIRFR3710ZTR<br>Tape and Reel Left<br>3000<br>AUIRFR3710ZTRL<br>Tape and Reel Right<br>3000<br>AUIRFR3710ZTRR<br>~~rsOO~~<br>~~eses~~<br>~~es~~<br>~~RsQO~~<br>~~RsQO~~<br>~~esen~~<br>~~Gs~~<br>~~es~~|
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12
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For technical support, please contact IR’s Technical Assistance Center http://www.irf.com/technical-info/
## **WORLD HEADQUARTERS:**
233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105
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13
Updated at February 9, 2023
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