AUIRFR3504Z

PD - 97492 

## AUIRFR3504Z 

## **AUTOMOTIVE GRADE** 

## **Features** 

Advanced Process Technology Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * 

## HEXFET[®] Power MOSFET 

|||D||**V(BR)DSS**|**40V**|
|---|---|---|---|---|---|
|||||**RDS(on)   max.**|**9.0m**Ω|
|G||||**ID (Silicon Limited)**|**77A**|
|||S||**ID (Package Limited)**|**42A**|



## **Description** 

Specifically designed for Automotive applications, this HEXFET[®] Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area.  Additional features of this design  are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. 

|||D-Pak|||
|---|---|---|---|---|
|**G**||**D**||**S**|
|Gate||Drain||Source|



## **Absolute Maximum Ratings** 

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.   These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified. 

|~~——S~~|**Parameter**<br>~~——S~~|**Max.**|**Units**|
|---|---|---|---|
|ID@ TC= 25°C<br>~~——S~~|Continuous Drain Current, VGS@ 10V (Silicon Limited)<br>~~——S~~|77|A|
|ID@ TC= 100°C <br>~~——S~~|Continuous Drain Current, VGS @ 10V(Silicon Limited)<br>~~——S~~<br>~~Yop~~|54<br>~~Yop~~||
|ID@ TC= 25°C<br>~~——S~~<br>~~ot~~|Continuous Drain Current, VGS@ 10V (Package Limited)<br>~~——S~~<br>~~_-Ha,~~<br>~~ot~~|42<br>~~_-Ha,~~||
|IDM<br>~~——S~~<br>~~ot~~|~~Pulsed Drain Current~~<br>~~——S~~<br>~~ot~~|310||
|PD@TC= 25°C<br>~~——S~~<br>~~ot~~|Power Dissipation<br>~~——S~~<br>~~ot~~<br>~~a~~|90<br>~~a~~|W<br>~~a~~|
||Linear Derating Factor<br>~~a~~<br>~~oo~~|0.60<br>~~a~~<br>~~oo~~|W/°C<br>~~a~~<br>~~oo~~|
|VGS|Linear Derating Factor<br>Gate-to-Source Voltage<br>~~es~~<br>~~ee~~|± 20<br>~~es~~<br>~~ee~~|V<br>~~es~~<br>~~es~~|
|EAS<br>~~———~~|Single Pulse Avalanche Energy (ThermallyLimited)<br>~~es~~<br>~~ee~~<br>~~©~~<br>~~———~~<br>~~ae~~|77<br>~~es~~<br>~~ee~~|mJ<br>~~es~~<br>~~es~~<br>~~—~~|
|EAS(tested )<br>~~———~~|Single Pulse Avalanche EnergyTested Value<br>~~ee~~<br>~~©~~<br>~~———~~<br>~~ae~~|110<br>~~ee~~||
|IAR<br>~~———~~|~~Avalanche Current~~<br>~~ee ~~<br>~~©~~<br>~~———~~<br>~~ae~~|See Fig.12a, 12b, 15, 16<br> ~~ee ~~|A<br> ~~es~~<br>~~—~~|
|EAR<br>~~———~~<br>~~po~~|~~Repetitive Avalanche Energy~~<br>~~©~~<br>~~———~~<br>~~ae~~<br>~~po~~||mJ<br>~~—~~|
|TJ<br>TSTG<br>~~———~~<br>~~po~~|Operating Junction and<br>Storage Temperature Range<br>~~©~~<br>~~———~~<br>~~ae~~<br>~~po~~|-55  to + 175|°C<br>~~—~~|
|~~po~~|Soldering Temperature, for 10 seconds  (1.6mm from case )<br>~~po~~|300||
|~~po~~|Soldering Temperature, for 10 seconds  (1.6mm from case )<br>Mounting Torque, 6-32 or M3 screw<br>~~po~~<br>~~ooo~~|10 lbf in (1.1N m)<br>~~ooo~~|~~ooo~~|



HEXFET[®] is a registered trademark of International Rectifier. 

***** Qualification standards can be found at http://www.irf.com/ 

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**Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

|V(BR)DSS<br>∆V(BR)DSS/∆TJ<br>RDS(on)<br>VGS(th)<br>gfs<br>IDSS|**Parameter**<br>**Min.**<br>**Typ.**<br>**Max. Units**<br>Drain-to-Source Breakdown Voltage<br>40<br>–––<br>–––<br>V<br>Breakdown Voltage Temp. Coefficient<br>–––<br>0.032<br>–––<br>V/°C<br>Static Drain-to-Source On-Resistance<br>–––<br>8.23<br>9.0<br>~~m~~Ω<br>Gate Threshold Voltage<br>2.0<br>–––<br>4.0<br>V<br>Forward Transconductance<br>32<br>–––<br>–––<br>S<br>Drain-to-Source Leakage Current<br>–––<br>–––<br>20<br>µA<br>–––<br>–––<br>250<br>VDS= 10V, ID= 42A<br>**Conditions**<br>VGS= 0V, ID= 250µA<br>Reference to 25°C, ID= 1mA<br>VGS= 10V, ID= 42A<br>VDS= VGS, ID= 250µA<br>VDS= 40V, VGS= 0V<br>VDS= 40V, VGS= 0V, TJ= 125°C<br>~~a~~<br>~~POD I~~<br>~~GO GO~~<br>~~DG (~~<br>~~DD~~<br>~~GD~~<br>~~DD~~<br>~~GO~~<br>~~GO (~~<br>~~es~~<br>~~DN~~<br>~~ns~~<br>~~I~~<br>~~I~~<br>~~EE~~<br>~~a~~|**Parameter**<br>**Min.**<br>**Typ.**<br>**Max. Units**<br>Drain-to-Source Breakdown Voltage<br>40<br>–––<br>–––<br>V<br>Breakdown Voltage Temp. Coefficient<br>–––<br>0.032<br>–––<br>V/°C<br>Static Drain-to-Source On-Resistance<br>–––<br>8.23<br>9.0<br>~~m~~Ω<br>Gate Threshold Voltage<br>2.0<br>–––<br>4.0<br>V<br>Forward Transconductance<br>32<br>–––<br>–––<br>S<br>Drain-to-Source Leakage Current<br>–––<br>–––<br>20<br>µA<br>–––<br>–––<br>250<br>VDS= 10V, ID= 42A<br>**Conditions**<br>VGS= 0V, ID= 250µA<br>Reference to 25°C, ID= 1mA<br>VGS= 10V, ID= 42A<br>VDS= VGS, ID= 250µA<br>VDS= 40V, VGS= 0V<br>VDS= 40V, VGS= 0V, TJ= 125°C<br>~~a~~<br>~~POD I~~<br>~~GO GO~~<br>~~DG (~~<br>~~DD~~<br>~~GD~~<br>~~DD~~<br>~~GO~~<br>~~GO (~~<br>~~es~~<br>~~DN~~<br>~~ns~~<br>~~I~~<br>~~I~~<br>~~EE~~<br>~~a~~|
|---|---|---|
|IGSS|Gate-to-Source Forward Leakage<br>–––<br>–––<br>200<br>nA<br>Gate-to-Source Reverse Leakage<br>–––<br>–––<br>-200<br>VGS= 20V<br>VGS= -20V<br>~~a~~<br>~~a~~||
|**Dynamic Electrical Characteristics @ TJ = 25°C(unless otherwise specified)**|||
|Qg|**Parameter**<br>**Min.**<br>**Typ.**<br>**Max. Units**<br>Total Gate Charge<br>–––<br>30<br>45<br>**Conditions**<br>ID= 42A<br>~~RN~~<br>~~GO~~<br>~~GO~~<br>~~GO~~<br>~~es~~||
|Qgs|Gate-to-Source Charge<br>–––<br>9.6<br>–––<br>nC<br>VDS= 32V<br>~~es~~||
|Qgd<br>td(on)<br>tr<br>td(off)<br>tf<br>LD|D<br>Gate-to-Drain("Miller")Charge<br>–––<br>12<br>–––<br>Turn-On DelayTime<br>–––<br>15<br>–––<br>Rise Time<br>–––<br>74<br>–––<br>Turn-Off DelayTime<br>–––<br>30<br>–––<br>ns<br>Fall Time<br>–––<br>38<br>–––<br>Internal Drain Inductance<br>–––<br>4.5<br>–––<br>Between lead,<br>VGS= 10V<br>VGS= 10V<br>VDD= 20V<br>ID= 42A<br>RG= 15Ω<br>~~es~~<br>~~@~~<br>~~aes es~~<br>~~©~~||
|LS|G<br>nH<br>6mm (0.25in.)<br>Internal Source Inductance<br>–––<br>7.5<br>–––<br>from package||
||S<br>and center of die contact||
|Ciss|Input Capacitance<br>–––<br>1510<br>–––<br>VGS= 0V<br>~~es~~||
|Coss|Output Capacitance<br>–––<br>340<br>–––<br>VDS= 25V<br>~~es~~||
|Crss|Reverse Transfer Capacitance<br>–––<br>190<br>–––<br>pF<br>ƒ= 1.0MHz<br>~~es~~||
|Coss|Output Capacitance<br>–––<br>1100<br>–––<br>VGS= 0V,  VDS= 1.0V,ƒ= 1.0MHz<br>~~es~~||
|Coss<br>Cosseff.|Output Capacitance<br>–––<br>340<br>–––<br>Effective Output Capacitance<br>–––<br>460<br>–––<br>VGS= 0V,  VDS= 32V,ƒ= 1.0MHz<br>VGS= 0V, VDS= 0V to 32V<br>~~es~~<br>~~es~~<br>~~@~~||
|**Diode Characteristics**|||
||**Parameter**<br>**Min.**<br>**Typ.**<br>**Max. Units**<br>**Conditions**||
|IS|Continuous Source Current<br>–––<br>–––<br>42<br>MOSFET symbol||
||(Body Diode)<br>A<br>showing  the||
|ISM|Pulsed Source Current<br>–––<br>–––<br>310<br>integral reverse||
|VSD<br>trr<br>Qrr<br>ton|(Body Diode)<br>Diode Forward Voltage<br>–––<br>–––<br>1.3<br>V<br>Reverse RecoveryTime<br>–––<br>18<br>27<br>ns<br>Reverse RecoveryCharge<br>–––<br>9.2<br>14<br>nC<br>Forward Turn-On Time<br>Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)<br>p-n junction diode.<br>TJ= 25°C, IS= 42A, VGS= 0V<br>TJ= 25°C, IF= 42A, VDD= 20V<br>di/dt = 100A/µs<br>~~es~~<br>~~es GO (KO~~<br>~~Ht +++f~~<br>~~, |~~<br>~~a~~<br>@||



Notes: o© Repetitive rating;  pulse width limited by Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitiveJmax , see Fig.12a, 12b, 15, 16 for typical repetitive , see Fig.12a, 12b, 15, 16 for typical repetitive max. junction temperature. (See fig. 11). 

Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitiveJmax , see Fig.12a, 12b, 15, 16 for typical repetitive , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. 

© Limited by TJmax, starting TJ = 25°C, L = 0.09mH, © RG = 25 Ω , IAS = 42A, VGS =10V. Part not recommended for use above this value. 

© This value determined from sample failure population, starting TJ = 25°C, L = 0.09mH, RG = 25 Ω , IAS = 42A, VGS =10V. @ When mounted on 1" square PCB (FR-4 or G-10 Material) . For recommended footprint and soldering techniques refer to application note #AN-994. 

Pulse width ≤ 1.0ms; duty cycle ≤ 2%. 

Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS . 

> R θ is measured at TJ approximately 90°C. 

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## **Qualification Information[†]** 

|**Qualification Information[†]**|**Qualification Information[†]**|||
|---|---|---|---|
|**Qualification Level**||Automotive<br>(per AEC-Q101)††||
|||Comments:<br>This<br>part<br>number(s)<br>passed<br>Automotive<br>qualification. IR’s Industrial and Consumer qualification level<br>is granted by extension of the higher Automotive level.||
|**Moisture Sensitivity Level**||D-PAK|MSL1|
|**ESD**|Machine Model|Class M4<br>AEC-Q101-002||
||Human Body Model|Class H1C<br>AEC-Q101-001||
||Charged Device<br>Model|Class C5<br>AEC-Q101-005||
|**RoHS Compliant**||Yes||



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1000 1000<br>VGS VGS<br>TOP           15V TOP           15V<br>10V 10V<br>8.0V een | 8.0V EEE<br>100 7.0V6.0V et I 7.0V6.0V py ailaa<br>5.5V5.0V 100 5.5V5.0V<br>BOTTOM 4.5V eaten= | BOTTOM 4.5V tia a<br>10 7 a g got HH<br>eel eee el 10 g -rno<br>4.5V<br>1<br>P H a ea<br>ne ee 4.5V | ZA<br>30µs PULSE WIDTH 30µs PULSE WIDTH<br>0.1 lTn i T en Tj = 25°C anilsrlnl 1 ieGti Tj = 175°C HH |<br>0.1 1 10 100 0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)<br>Fig 1.   Typical Output Characteristics Fig 2.   Typical Output Characteristics<br>1000.0<br>eeee 60<br>T = 175°C<br>pee J<br>100.0 50<br>T = 175°C<br>re J  eae > _|<br>40<br>ee ee eea e TJ = 25°C<br>10.0<br>AA | | | 30 | Y | ft<br>ey , es es es es<br>TJ = 25°C<br>1.0 P A 20 MK<br>VDS = 20V<br>eeeee eee<br>30µs PULSE WIDTH 10<br>0.1 TP T) [ f VDS = 10V o<br>4.0 5.0 6.0 7.0 8.0 9.0 10.0 380µs PULSE WIDTH<br>0<br>VGS, Gate-to-Source Voltage (V) 0 10 20 30 40 50<br>ID, Drain-to-Source Current (A)<br>Gfs, Forward Transconductance (S)<br>ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A)<br>) (Α<br>ID, Drain-to-Source Current<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

**Fig 4.** Typical Forward Transconductance Vs. Drain Current 

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2500 20<br>VGS   = 0V,       f = 1 MHZ ID= 42A<br>CCiss   = C = Cgs + Cgd,  C ds SHORTED VDS= 32V<br>2000 rss   gd  16 VDS= 20V<br>Coss  = Cds + Cgd VDS= 8.0V<br>Ciss<br>Smt be ee<br>1500 12<br>ise |<br>8<br>1000<br>a Zo<br>Coss 4<br>500<br>Crss FOR TEST CIRCUIT<br>SEE FIGURE 13<br>Sin sS: 0 a<br>0<br>0 10 20 30 40 50<br>1 10 100<br> QG  Total Gate Charge (nC)<br>VDS, Drain-to-Source Voltage (V)<br>Fig 5.   Typical Capacitance Vs. Fig 6.   Typical Gate Charge Vs.<br>Drain-to-Source Voltage Gate-to-Source Voltage<br>1000.0 1000<br>OPERATION IN THIS AREA<br>LIMITED BY R D S(on)<br>100.0 100<br>TJ = 175°C<br>100µsec<br>10.0 10<br>TJ = 25°C 1msec<br>1.0 1<br>10msec<br>Tc = 25°C<br>VGS = 0V Tj = 175°CSingle Pulse<br>0.1 0.1<br>0.2 0.6 1.0 1.4 1.8 2.2 0 1 10 100 1000<br>VSD, Source-toDrain Voltage (V) VDS  , Drain-toSource Voltage (V)<br>ISD, Reverse Drain Current (A)<br>VGS, Gate-to-Source Voltage (V)<br>C, Capacitance (pF)<br>ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

**Fig 8.** Maximum Safe Operating Area 

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80 2.0<br>LIMITED BY PACKAGE ID = 42A<br>VGS = 10V<br>60<br>1.5<br>pf e t + a<br>40<br>ee ene aene<br>1.0<br>20 Pf | | ft A p24<br>0<br>0.5<br>25 50 75 100 125 150 175<br>-60 -40 -20 0 20 40 60 80 100 120 140 160 180<br> TC , Case Temperature (°C)<br>TJ , Junction Temperature (°C)<br>Fig 9.   Maximum Drain Current Vs. Fig 10.   Normalized On-Resistance<br>Case Temperature Vs. Temperature<br>10<br>1<br>D = 0.50<br>0.20<br>0.10<br>0.1 0.05 | R1 R1 R2 R2 HIP Ri (°C/W)    ot  τ EL i (sec) [TTT]<br>0.02 τ J τ J τ C τ 1.117       0.000536<br>0.01 τ 1 τ 1 τ 2 τ 2 0.5422     0.004428<br>0.01<br>=e eel Ci=  T τ i / Ri T =<br>SINGLE PULSE Ci i / Ri Notes:<br>( THERMAL RESPONSE ) 1. Duty Factor D = t1/t2<br>ne 2. Peak Tj = P dm x Zthjc + Tc<br>0.001<br>1E-006 1E-005 0.0001 0.001 0.01 0.1<br>t1 , Rectangular Pulse Duration (sec)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>ID , Drain Current (A)<br>Thermal Response ( Z thJC )<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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15V<br>VDS L DRIVER<br>RGG D.U.T +<br>- [[V][DD]][[DD]]<br>IASAS<br>: 20VVGSVGSGS<br> it tpp 0.01 Ω<br>w<br>**----- End of picture text -----**<br>


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320<br>                 I<br>D<br>VDS L DRIVER 280 TOP                 6.4A       5.0A<br>240 BOTTOM   42A<br>\ | ft [tt]<br>RGG D.U.T + A t<br>- [[V][DD]][[DD]] 200<br>IASAS A<br>: 20VVGSVGSGS  it tpp 0.01 Ω 160 p \) |ft ftft |<br>120<br>w N ON eee<br>80 B NR<br>Fig 12a.   Unclamped Inductive Test Circuit<br>40 P SS<br>V(BR)DSS<br>an tp 0 R |] CE|Pee<br>25 50 75 100 125 150 175<br>Starting TJ, Junction Temperature (°C)<br>IAS<br>AL<br>Fig 12c.   Maximum Avalanche Energy<br>Fig 12b.   Unclamped Inductive Waveforms<br>Vs. Drain Current<br>10 <————— _ — QG<br>QGS QGD 4.5<br>VG 4.0<br>van F CRREEERED<br>Charge 3.5 ID = 250µA<br>- S TI TT<br>Fig 13a.   Basic Gate Charge Waveform 3.0<br>O P N LT<br>2.5 H TT<br>L 2.0<br>VCC -75 -50 -25 0 25 50 75 100 125 150 175<br>DUT<br>0 TJ , Temperature ( °C )<br>1K<br>of SERREEENS<br>EAS, Single Pulse Avalanche Energy (mJ)<br>VGS(th) Gate threshold Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 14.** Threshold Voltage Vs. Temperature 

**Fig 13b.** Gate Charge Test Circuit 

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1000<br>Duty Cycle = Single Pulse<br>100 Allowed avalanche Current vs<br>ee et<br>avalanche  pulsewidth,  tav<br>0.01 assuming  ∆ Tj = 25°C due to<br>avalanche losses. Note: In no<br>10 0.05 case should Tj be allowed to<br>exceed Tjmax<br>0.10<br>1<br>0.1 aa ee ee ee<br>1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01<br>tav (sec)<br>Fig 15.   Typical Avalanche Current Vs.Pulsewidth<br>80<br>TOP          Single Pulse<br>BOTTOM   1% Duty Cycle<br>ID = 42A Notes on Repetitive Avalanche Curves , Figures 15, 16:<br>60 N ie<br>(For further info, see AN-1005 at www.irf.com)<br>1. Avalanche failures assumption:<br>  Purely a thermal phenomenon and failure occurs at a<br>    temperature far in excess of Tjmax. This is validated for<br>40     every part type.<br>2. Safe operation in Avalanche is allowed as long asTjmax is<br>  not exceeded.<br>H T 3. Equation below based on circuit and waveforms shown in<br>20   Figures 12a, 12b.<br>4. PD (ave) = Average power dissipation per single<br>    avalanche pulse.<br>H UN<br>5. BV = Rated breakdown voltage (1.3 factor accounts for<br>0 E N     voltage increase during avalanche).<br>25 50 75 100 125 150 175 6. Iav = Allowable avalanche current.<br>7.  ∆ T = Allowable rise in junction temperature, not to exceed<br>Starting TJ , Junction Temperature (°C)     Tjmax (assumed as 25°C in Figure 15, 16).<br>EAR , Avalanche Energy (mJ)<br>Avalanche Current (A)<br>**----- End of picture text -----**<br>


- tav = Average time in avalanche. 

- D = Duty cycle in avalanche =  tav ·f 

- ZthJC(D, tav) = Transient thermal resistance, see figure 11) 

## **PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC Iav = 2 T/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav** 

**Fig 16.** Maximum Avalanche Energy Vs. Temperature 

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Driver Gate Drive<br>P.W.<br>D.U.T + {¢$ P.W. Period —— D = —— Period<br>) [©)] Circuit    • Layout Considerations | t V t GS=10<br>| — - •   GroundLow StrayPlane Inductance<br>•   CurrentLow LeakageTransformerInductance ®@ D.U.T. ISD Waveform<br>+<br>Reverse<br>@ - a | = - ® + RecoveryCurrent r Body Diode ForwardCurrent di/dt /\ ——<br>® D.U.T. VDS Waveform Diode Recoverydv/dt ‘<br>00 a VDD<br>ma<br>•  Re-Applied<br>•   Driver same type as D.U.T. + Voltage Body Diode  Forward Drop<br>Re ( 4 •   Ispvidt controlledcontrolled byby DutyRg Factor "D" Vop - @ Inductor Curent<br>•<br>D.U.T. - Device Under Test Ripple  ≤ 5% SOO | ISD<br>**----- End of picture text -----**<br>


**Fig 17.** eak Diode Recovery dv/dt Test Circuit or N-Channel HEXFET ® ower MOSFETs 

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 1 s<br> 0.1 %<br>**----- End of picture text -----**<br>


**Fig 18a.** Switching Time Test Circuit 

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VDS<br>90%<br>10%<br>VGS |\< ole >!eeole<br>td(on) tr td(off) tf<br>**----- End of picture text -----**<br>


**Fig 18b.** Switching Time Waveforms 

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## D-Pak Part Marking Information 

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**==> picture [411 x 105] intentionally omitted <==**

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TR TRR TRL<br>OOOO > © } oo Oo O<br>16.3 ( .641 ) 16.3 ( .641 )<br>15.7 ( .619 ) 15.7 ( .619 )<br>12.1 ( .476 ) FEED DIRECTION 8.1 ( .318 ) FEED DIRECTION<br>11.9 ( .469 ) 7.9 ( .312 )<br>**----- End of picture text -----**<br>


## NOTES : 

1.  CONTROLLING DIMENSION : MILLIMETER. 

2.  ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 

3.  OUTLINE CONFORMS TO EIA-481 & EIA-541. 

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  13 INCH<br>16 mm<br>**----- End of picture text -----**<br>


NOTES : 

1. OUTLINE CONFORMS TO EIA-481. 

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## **Ordering Information** 

|**Base part**<br>AUIRFR3504Z|**Package Type**<br>**Standard Pack**<br>**Complete Part Number**<br>**Form**<br>**Quantity**<br>Dpak<br>Tube<br>75<br>AUIRFR3504Z<br>Tape and Reel<br>2000<br>AUIRFR3504ZTR<br>Tape and Reel Left<br>3000<br>AUIRFR3504ZTRL<br>Tape and Reel Right<br>3000<br>AUIRFR3504ZTRR<br>~~ee~~<br>~~es een~~<br>~~es~~<br>~~esQO~~<br>~~RsQQ~~<br>~~es~~<br>~~es~~|
|---|---|



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Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. Part numbers designated with the “AU” prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and process change notification. All products are sold subject to IR’s terms and conditions of sale supplied at the time of order acknowledgment. 

IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR’s standard warranty.  Testing and other quality control techniques are used to the extent IR deems necessary to support this warranty. Except where mandated by government requirements, testing of all parameters of each product is not necessarily performed. 

IR assumes no liability for applications assistance or customer product design. Customers are responsible for their products and applications using IR components. To minimize the risks with customer products and applications, customers should provide adequate design and operating safeguards. 

Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without alteration and is accompanied by all associated warranties, conditions, limitations, and notices.  Reproduction of this information with alterations is an unfair and deceptive business practice.  IR is not responsible or liable for such altered documentation.  Information of third parties may be subject to additional restrictions. Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for that product or service voids all express and any implied warranties for the associated IR product or service and is an unfair and deceptive business practice.  IR is not responsible or liable for any such statements. 

IR products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or in other applications intended to support or sustain life, or in any other application in which the failure of the IR product could create a situation where personal injury or death may occur.  Should Buyer purchase or use IR products for any such unintended or unauthorized application, Buyer shall indemnify and hold International Rectifier and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that IR was negligent regarding the design or manufacture of the product. 

IR products are neither designed nor intended for use in military/aerospace applications or environments unless the IR products are specifically designated by IR as military-grade or “enhanced plastic.”  Only products designated by IR as military-grade meet military specifications.  Buyers acknowledge and agree that any such use of IR products which IR has not designated as military-grade is solely at the Buyer’s risk, and that they are solely responsible for compliance with all legal and regulatory requirements in connection with such use. 

IR products are neither designed nor intended for use in automotive applications or environments unless the specific IR products are designated by IR as compliant with ISO/TS 16949 requirements and bear a part number including the designation “AU”.  Buyers acknowledge and agree that, if they use any non-designated products in automotive applications, IR will not be responsible for any failure to meet such requirements. 

For technical support, please contact IR’s Technical Assistance Center http://www.irf.com/technical-info/ 

## **WORLD HEADQUARTERS:** 

233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105 

www.irf.com 

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