AUIRFR2407TRL

**AUTOMOTIVE GRADE** 

## ~~Cinfineon~~ 

AUIRFR2407 ~~—~~ HEXFET[® ] Power MOSFET **VDSS 75V RDS(on)            typ. 21.8m**  **max. 26m**  ~~——~~ **ID  (Silicon Limited) 42A** D S G D-Pak AUIRFR2407 

## **Features** 

- Advanced Planar Technology 

- Low On-Resistance 

- Dynamic dV/dT Rating 

- 175°C Operating Temperature 

- Fast Switching 

- Fully Avalanche Rated 

- Repetitive Avalanche Allowed up to Tjmax 

- Lead-Free, RoHS Compliant 

- Automotive Qualified * 

## **Description** 

Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest D-Pak processing techniques to achieve low on-resistance per silicon AUIRFR2407 area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well **G D S** known for, provides the designer with an extremely efficient and Gate Drain Source ~~es~~ reliable device for use in Automotive and a wide variety of other applications. **Standard Pack Base part number Package Type Orderable Part Number Form Quantity** Tube 75 AUIRFR2407 AUIRFR2407 D-Pak ~~>SS~~ Tape and Reel Left 3000 AUIRFR2407TRL **Absolute Maximum Ratings** Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.   These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified. 

|otherwise specified.||||
|---|---|---|---|
|**Symbol**<br>~~———————~~|**Parameter**<br>~~———————~~|**Max.**<br>~~ee~~|**Units**<br>~~ee~~|
|ID@ TC= 25°C<br>~~———————~~|Continuous Drain Current, VGS@ 10V (Silicon Limited)<br>~~———————~~|42<br>~~ee~~|A<br>~~ee~~|
|ID @TC= 100°C<br>~~———————~~|Continuous Drain Current,VGS @10V(Silicon Limited)<br>~~———————~~|29<br>~~ee~~||
|IDM<br>~~———————~~|Pulsed Drain Current<br>~~———————~~|170<br>~~ee~~||
|PD@TC= 25°C<br>~~———————~~|Maximum Power Dissipation<br>~~———————~~|110<br>~~ee~~|W<br>~~ee~~|
|~~———————~~|Linear Derating Factor<br>~~———————~~|0.71<br>~~ee~~|W/°C<br>~~ee~~|
|VGS|Gate-to-SourceVoltage|± 20|V|
|EAS|Single Pulse Avalanche Energy (ThermallyLimited) |130|mJ|
|IAR|Avalanche Current|25|A|
|EAR|Repetitive Avalanche Energy |11|mJ|
|dv/dt|Pead Diode Recoverydv/dt|5.0|V/ns|
|TJ<br>TSTG<br>~~a~~|Operating Junction and<br>Storage Temperature Range<br>~~a~~|-55  to + 175|°C|
|~~a~~|SolderingTemperature,for 10 seconds(1.6mm from case)<br>~~a~~|300||



HEXFET® is a registered trademark of Infineon. 

***** Qualification standards can be found at www.infineon.com 

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AUIRFR2407 ~~LLL~~ 

## ~~Cinfin eon~~ 

## **Static @ TJ = 25°C (unless otherwise specified)** 

|~~es~~|||||||
|---|---|---|---|---|---|---|
|Qg<br>~~es~~|Total Gate Charge|–––|74|110|nC|ID= 25A<br>VDS= 60V<br>VGS= 10V|
|g<br>Qgs<br>~~es~~<br>~~es~~|Gate-to-Source Charge<br>~~Se~~|–––<br>~~Se~~|13<br>~~Se~~|19<br>~~Se~~|||
|Qgd<br>~~es~~<br>~~Rs~~|Gate-to-Drain Charge<br>~~Se~~|–––<br>~~Se~~|22<br>~~Se~~|34<br>~~Se~~|||
|gd<br>td(on)<br>~~es~~<br>~~Rs~~|Turn-On DelayTime<br>~~Se~~|–––<br>~~Se~~|16<br>~~Se~~|–––<br>~~Se~~|ns<br>~~+++)~~<br>~~|~~|VDD= 38V<br>ID= 25A<br>RG= 6.8<br>VGS= 10V|
|d(on)<br>tr<br>~~Rs~~<br>~~es~~|RiseTime|–––|90|–––|||
|td(off)<br>~~es~~<br>~~es~~|Turn-Off DelayTime<br>|–––<br>|65<br>|–––<br>|||
|d(off)<br>tf<br>~~es~~<br>~~es+++)~~|Fall Time<br>~~+++)~~|–––<br>~~+++)~~|66<br>~~+++)~~|–––<br>~~+++)~~|||
|LD<br>~~es+++)~~|Internal Drain Inductance<br>~~+++)~~|–––<br>~~+++)~~|4.5<br>~~+++)~~|–––<br>~~+++)~~|nH<br>~~+++)~~<br>~~|~~<br>~~Bo~~|Between lead,<br>6mm (0.25in.)<br>from package<br>and centerofdie contact<br>~~Bo~~|
|LS<br>~~+++)~~<br>~~a~~<br>~~————~~|Internal Source Inductance<br>~~+++)~~<br>~~————~~|–––<br>~~+++)~~<br>~~I~~|7.5<br>~~+++)~~|–––<br>~~+++)~~|||
|Ciss<br>~~+++)~~<br>~~a~~<br>~~ee~~<br>~~————~~|Input Capacitance<br>~~+++)~~<br>~~ns~~<br>~~————~~|–––<br>~~+++)~~<br>~~ns~~<br>~~I~~|2400<br>~~+++)~~<br>~~ns~~|–––<br>~~+++)~~<br>~~ns~~|pF<br>~~+++)~~<br>~~|~~<br>~~Bo~~|VGS= 0V<br>VDS= 25V<br>ƒ= 1.0MHz,See Fig. 5<br>~~Bo~~|
|Coss<br>~~a~~<br>~~ee~~<br>~~ee~~<br>~~————~~|Output Capacitance<br>~~ns~~<br>~~ns~~<br>~~————~~|–––<br>~~ns~~<br>~~ns~~<br>~~I~~|340<br>~~ns~~<br>~~ns~~|–––<br>~~ns~~<br>~~ns~~|||
|Crss<br>~~a~~<br>~~ee~~<br>~~ee~~<br>~~————~~|Reverse Transfer Capacitance<br>~~ns~~<br>~~ns~~<br>~~————~~|–––<br>~~ns~~<br>~~ns~~<br>~~I~~|77<br>~~ns~~<br>~~ns~~|–––<br>~~ns~~<br>~~ns~~|||
|Coss<br>~~a~~<br>~~ee~~<br>~~————~~<br>~~es~~|Output Capacitance<br>~~ns~~<br>~~————~~|––– 15700 –––<br>~~ns~~<br>~~I~~|––– 15700 –––<br>~~ns~~|––– 15700 –––<br>~~ns~~||VGS= 0V, VDS= 1.0V, ƒ = 1.0MHz<br>~~Bo~~<br>~~BP~~|
|Coss<br>~~————~~<br>~~es~~<br>~~ee~~|Output Capacitance<br>~~————~~|–––<br>~~I~~|220|–––||VGS= 0V,VDS= 60V, ƒ= 1.0MHz<br>~~BP~~<br>~~ee~~|
|Coss eff.<br>~~————~~<br>~~es~~<br>~~ee~~|Effective Output Capacitance<br>~~————~~|–––<br>~~I~~|220|–––||VGS= 0V,VDS= 0V to 60V<br>~~BP~~<br>~~ee~~|
|**Diode Characteristics**<br>~~I~~<br>~~————~~<br>~~ee~~<br>~~ee~~|||||||
|~~a~~<br>~~Hf}~~|**Parameter **<br>~~a~~<br>~~Hf}~~|**Min.**|**Typ. M**|**. Max.**|**Units**<br>~~pe~~|**Conditions**<br>~~pe~~|
|IS<br>~~Hf}~~|Continuous Source Current<br>(Body Diode)<br>~~Hf}~~|–––|–––|42|A<br>~~pe~~<br>~~(OR~~|MOSFET symbol<br>showing  the<br>integral reverse<br>p-n junction diode.<br>~~pe~~|
|ISM<br>~~Hf}~~<br>~~es~~|Pulsed Source Current<br>(Body Diode)<br>~~Hf}~~<br>~~I~~|–––<br>~~I~~|–––|170<br>~~(OR~~|||
|VSD<br>~~Hf}~~<br>~~es~~|Diode Forward Voltage<br>~~Hf}~~<br>~~I~~|–––<br>~~I~~|–––|1.3<br>~~(OR~~|V<br>~~pe~~<br>~~(OR~~|TJ =25°C,IS=25A,VGS =0V<br>~~pe~~|
|trr<br>~~es~~<br>~~$$~~<br>~~ee~~|Reverse Recovery Time<br>~~I~~<br>~~$$~~<br>~~I~~|–––<br>~~I~~<br>~~I~~|100<br>~~I~~|150<br>~~(OR~~|ns<br>~~(OR~~|TJ= 25°C ,IF= 25A<br>nC   di/dt = 100A/µs|
|Qrr<br>~~ee~~|Reverse RecoveryCharge<br>~~I~~|–––<br>~~I~~|400<br>~~I~~|600|nC   di/dt = 100A/||
|ton<br>~~ee~~|Forward Turn-On Time<br>~~I~~|Intrinsic turn-on time is negligible(turn-on is dominated byLS+LD)<br>~~I I~~|||||



**Notes:** 

-  Repetitive rating;  pulse width limited by max. junction temperature. 

-  VDD = 25V, starting  TJ = 25°C, L = 0.42mH, RG = 25, IAS = 25A 

-  ISD 25A, di/dt 290A/µs, VDD V(BR)DSS, TJ  175°C. 

-  Pulse width 300µs; duty cycle  2%. 

- Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. 

-  When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994 . 

-    R is measured at TJ approximately 90°C. 

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~~Cinfineon~~ 

AUIRFR2407 ~~[~~ 

**Fig. 1** Typical Output Characteristics 

**Fig. 3** Typical Transfer Characteristics 

**Fig. 2** Typical Output Characteristics 

**Fig. 4** Normalized On-Resistance Vs. Temperature 

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~~Cinfineon~~ 

## AUIRFR2407 ~~[~~ 

**Fig 5.** Typical Capacitance vs. Drain-to-Source Voltage 

**Fig. 7** Typical Source-to-Drain Diode Forward Voltage 

**Fig 6.** Typical Gate Charge vs. Gate-to-Source Voltage 

**Fig 8.** Maximum Safe Operating Area 

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AUIRFR2407 ~~[~~ 

**==> picture [203 x 197] intentionally omitted <==**

**----- Start of picture text -----**<br>
50<br>40 | tid<br>NN]<br>30 ~<br>N<br>20<br>10<br>0<br>25 50 75 100 125 150 175<br> TC , Case Temperature (°C)<br>ID,  Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 10a.** Switching Time Test Circuit 

**Fig 9.** Maximum Drain Current Vs. Case Temperature 

**Fig 10b.** Switching Time Waveforms 

**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

2015-11-23 

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AUIRFR2407 ~~[~~ 

**==> picture [212 x 126] intentionally omitted <==**

**----- Start of picture text -----**<br>
15V<br>L DRIVER<br>VDS<br>R G D.U.T +<br>“An, - [V][DD]<br>IAS<br>“<br>20V<br>t oe tp ly 0.01<br>**----- End of picture text -----**<br>


**Fig 12a.** Unclamped Inductive Test Circuit 

**==> picture [122 x 28] intentionally omitted <==**

**----- Start of picture text -----**<br>
V(BR)DSS<br>tp ><br>**----- End of picture text -----**<br>


**Fig 12c.** Maximum Avalanche Energy vs. Drain Current 

IAS 

**Fig 12b.** Unclamped Inductive Waveforms 

**==> picture [172 x 118] intentionally omitted <==**

**----- Start of picture text -----**<br>
Id<br>Vds<br>Vgs<br>)<br>Vgs(th)<br>Qgs1 Qgs2 Qgd Qgodr<br>**----- End of picture text -----**<br>


**Fig 13a.** Gate Charge Waveform 

**Fig 13b.** Gate Charge Test Circuit 

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AUIRFR2407 ~~[~~ 

**Fig 14.** Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs 

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AUIRFR2407 ~~LLL~~ 

## ~~Cinfin eon~~ 

**D-Pak (TO-252AA) Package Outline** (Dimensions are shown in millimeters (inches)) 

## **D-Pak (TO-252AA) Part Marking Information** 

**==> picture [330 x 148] intentionally omitted <==**

**----- Start of picture text -----**<br>
Part Number  AUFR2407<br>Date Code<br>IR Logo  T éaR YWWA  Y= Year<br>WW= Work Week<br><br>XX         XX<br>[|sd<br>Lot Code<br>**----- End of picture text -----**<br>


Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 

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AUIRFR2407 ~~LLL~~ 

**D-Pak (TO-252AA) Tape & Reel Information** (Dimensions are shown in millimeters (inches)) 

**==> picture [429 x 370] intentionally omitted <==**

**----- Start of picture text -----**<br>
TR TRR TRL<br>16.3 ( .641 ) 16.3 ( .641 )<br>15.7 ( .619 ) 15.7 ( .619 )<br>12.1 ( .476 ) FEED DIRECTION 8.1 ( .318 ) FEED DIRECTION<br>11.9 ( .469 ) 7.9 ( .312 )<br>NOTES :<br>1.  CONTROLLING DIMENSION : MILLIMETER.<br>2.  ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).<br>3.  OUTLINE CONFORMS TO EIA-481 & EIA-541.<br>  13 INCH<br>16 mm<br>**----- End of picture text -----**<br>


NOTES : 

1.  CONTROLLING DIMENSION : MILLIMETER. 

2.  ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 

3.  OUTLINE CONFORMS TO EIA-481 & EIA-541. 

NOTES : 

1. OUTLINE CONFORMS TO EIA-481. 

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 

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AUIRFR2407 ~~ie »&»«=5F—Ee~~ **Qualification Information** 

|**Qualification Information**|**Qualification Information**|||
|---|---|---|---|
|**Qualification Level**||Automotive<br>(per AEC-Q101)||
|||Comments: This part number(s) passed Automotive qualification. Infineon’s<br>Industrial and Consumer qualification level is granted by extension of the higher<br>Automotive level.||
|**Moisture Sensitivity Level**||D-Pak|MSL1|
|||I-Pak||
|**ESD**|Machine Model|Class M4 (+/-500V)† <br>AEC-Q101-002||
||Human Body Model|Class H1C (+/-2000V)† <br>AEC-Q101-001||
||Charged Device Model|Class C5 (+/-2000V)† <br>AEC-Q101-005||
|**RoHS Compliant**||Yes||



- Highest passing voltage. 

|**Revision History**|**Revision History**||||
|---|---|---|---|---|
|**Date**||||**Comments**|
|11/23/15|||Updated datasheet with corporate template||
||||Corrected orderingtable onpage 1.||



**Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2015 All Rights Reserved.** 

## **IMPORTANT NOTICE** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office (www.infineon.com). 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not ~~_~~ be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 

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