AUIRFR1010Z

PD - 97683 

## **AUTOMOTIVE GRADE** 

## AUIRFR1010Z 

## **Features** 

- Advanced Process Technology 

- Low On-Resistance 

- 175°C Operating Temperature 

- Fast Switching 

- Repetitive Avalanche Allowed up to Tjmax 

- Lead-Free, RoHS Compliant 

## HEXFET[®] Power MOSFET 

|**VDSS**|**55V**|
|---|---|
|**RDS(on)   typ.**<br>**max.**|**5.8m**Ω|
||**7.5m**Ω|
|**ID (Silicon Limited)**|**91A**|
|**D (Silicon Limited)**<br>**ID (Package Limited)**|**42A**|



- Automotive Qualified * 

## **Description** 

Specifically designed for Automotive applications, this HEXFET[®] Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.  Additional features of this design  are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. 

|||D-Pak|||
|---|---|---|---|---|
|||AUIRFR1010Z|||
||||||
|**G**||**D**||**S**|
|Gate||Drain||Source|



## **Absolute Maximum Ratings** 

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.   These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified. 

||**Parameter**<br>~~—<—_—$_——————~~|**Max.**<br>~~—<—_—$_—————— ae~~|**Units**<br>~~ae~~|
|---|---|---|---|
|ID @ TC = 25°C|Continuous Drain Current, VGS@ 10V (Silicon Limited)<br>~~a~~<br>~~—<—_—$_——————~~|91<br>~~a~~<br>~~—<—_—$_—————— ae~~|A<br>~~ae~~|
|ID @ TC = 100°C|Continuous Drain Current, VGS @ 10V(Silicon Limited)<br>~~a~~<br>~~—<—_—$_——————~~|65<br>~~a~~<br>~~—<—_—$_—————— ae~~||
|ID @ TC = 25°C|Continuous Drain Current, VGS@ 10V (Package Limited)<br>~~a~~<br>~~—<—_—$_——————~~|42<br>~~a~~<br>~~—<—_—$_—————— ae~~||
|IDM|~~Pulsed Drain Current~~<br>~~—<—_—$_——————~~|360<br>~~—<—_—$_—————— ae~~||
|PD @TC = 25°C<br>~~=~~|Power Dissipation<br>~~—<—_—$_——————~~<br>~~a~~<br>~~=~~|140<br>~~—<—_—$_—————— ae~~<br>~~a~~|W<br>~~ae~~<br>~~a~~|
|~~=~~|Linear Derating Factor<br>~~=~~<br>~~_NTYT_._]aAHH——~~|0.9<br>~~_NTYT_._]aAHH——~~|W/°C<br>~~_NTYT_._]aAHH——~~|
|VGS<br>~~=~~|Linear Derating Factor<br>Gate-to-Source Voltage<br>~~=~~<br>~~_NTYT_._]aAHH——~~|± 20<br>~~_NTYT_._]aAHH——~~|V<br>~~_NTYT_._]aAHH——~~|
|EAS|~~Single Pulse Avalanche Energy  (Thermally limited)~~<br>~~oe~~|110<br>~~oe~~|mJ<br>~~|~~|
|EAS(tested )|~~Single Pulse Avalanche Energy Tested Value~~<br>~~oe~~<br>~~a~~|220<br>~~oe~~<br>~~a~~||
|IAR|~~Avalanche Current~~|See Fig.12a, 12b, 15, 16<br>~~po~~|A|
|EAR<br>~~po~~|~~Repetitive Avalanche Energy~~<br>~~po~~||mJ<br>~~po~~|
|TJ<br>TSTG<br>~~po~~|Operating Junction and<br>Storage Temperature Range<br>~~po~~|-55  to + 175<br>~~po~~|°C<br>~~po~~|
|~~po~~|Soldering Temperature, for 10 seconds  (1.6mm from case )<br>~~po~~|300<br>~~po~~||



HEXFET[®] is a registered trademark of International Rectifier. ***** Qualification standards can be found at http://www.irf.com/ 

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**Static Electrical @ TJ = 25°C (unless otherwise specified)** 

|**Symbol**|**Parameter**<br>**Min.**<br>**Typ.**<br>**Max. Units**<br>**Conditions**||
|---|---|---|
|V(BR)DSS|Drain-to-Source Breakdown Voltage<br>55<br>–––<br>–––<br>V<br>VGS= 0V, ID= 250μA<br>~~pT~~||
|ΔV(BR)DSS/ΔTJ<br>RDS(on)<br>VGS(th)<br>gfs<br>IDSS<br>IGSS|J<br>Breakdown Voltage Temp. Coefficient<br>–––<br>0.051<br>–––<br>V/°C<br>Static Drain-to-Source On-Resistance<br>–––<br>5.8<br>7.5<br>mΩ<br>Gate Threshold Voltage<br>2.0<br>–––<br>4.0<br>V<br>Forward Transconductance<br>31<br>–––<br>–––<br>S<br>Drain-to-Source Leakage Current<br>–––<br>–––<br>20<br>μA<br>–––<br>–––<br>250<br>Gate-to-Source Forward Leakage<br>–––<br>–––<br>200<br>nA<br>VGS= 20V<br>VDS= 25V, ID= 42A<br>Reference to 25°C, ID= 1mA<br>VGS= 10V, ID= 42A<br>VDS= VGS,ID= 100μA<br>VDS= 55V, VGS= 0V<br>VDS= 55V, VGS= 0V, TJ= 125°C<br>~~pe~~<br>~~GO~~<br>~~GG~~<br>~~GC CO~~<br>~~pO~~<br>~~ee~~<br>~~eee eee~~<br>~~a~~<br>~~a~~||
||Gate-to-Source Reverse Leakage<br>–––<br>–––<br>-200<br>VGS= -20V<br>~~a~~||
|**Dynamic Electrical @ T**|**Dynamic Electrical @ TJ = 25°C (unless otherwise specified)**||
|**Symbol**<br>Qg<br>Qgs<br>Qgd<br>td(on)<br>tr<br>td(off)<br>tf|**Parameter**<br>**Min.**<br>**Typ.**<br>**Max. Units**<br>Total Gate Charge<br>–––<br>63<br>95<br>Gate-to-Source Charge<br>–––<br>17<br>–––<br>nC<br>Gate-to-Drain("Miller")Charge<br>–––<br>23<br>–––<br>Turn-On DelayTime<br>–––<br>17<br>–––<br>Rise Time<br>–––<br>76<br>–––<br>Turn-Off DelayTime<br>–––<br>42<br>–––<br>ns<br>Fall Time<br>–––<br>48<br>–––<br>VDS= 44V<br>ID= 42A<br>**Conditions**<br>VGS= 10V<br>VGS= 10V<br>VDD= 28V<br>ID= 42A<br>RG= 7.6Ω<br>~~QQ~~<br>~~a~~<br>~~ee~~<br>~~a~~<br>~~ee~~<br>~~a~~<br>~~ee~~<br>~~@~~<br>~~po~~<br>~~es~~<br>~~ee~~<br>~~es~~<br>~~ee~~||
|LD|D<br>Internal Drain Inductance<br>–––<br>4.5<br>–––<br>Between lead,||
||nH<br>6mm (0.25in.)||
|LS|G<br>Internal Source Inductance<br>–––<br>7.5<br>–––<br>from package||
||S<br>and center of die contact||
|Ciss<br>Input Capacitance<br>–––<br>2840<br>–––<br>Coss<br>Output Capacitance<br>–––<br>470<br>–––<br>Crss<br>Reverse Transfer Capacitance<br>–––<br>250<br>–––<br>pF<br>Coss<br>Output Capacitance<br>–––<br>1630<br>–––<br>Coss<br>Output Capacitance<br>–––<br>360<br>–––<br>Cosseff.<br>Effective Output Capacitance<br>–––<br>560<br>–––<br>**Diode Characteristics**<br>VGS= 0V<br>VDS= 25V<br>ƒ= 1.0MHz<br>VGS= 0V,  VDS= 1.0V,ƒ= 1.0MHz<br>VGS= 0V,  VDS= 44V,ƒ= 1.0MHz<br>VGS= 0V, VDS= 0V to 44V<br>~~a~~<br>~~ee~~<br>~~a~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~po~~<br>~~ee~~<br>~~®~~|||
|**Symbol**|**Parameter**<br>**Min.**<br>**Typ.**<br>**Max. Units**<br>**Conditions**<br>~~QO~~<br>~~DQ~~||
|IS<br>ISM|Continuous Source Current<br>–––<br>–––<br>42<br>(Body Diode)<br>A<br>Pulsed Source Current<br>–––<br>–––<br>360<br>(Body Diode)<br>MOSFET symbol<br>showing  the<br>integral reverse<br>p-n junction diode.<br>~~ee~~<br>|<br>~~oo~~<br>~~|~~||
|VSD<br>trr<br>Qrr<br>ton|Diode Forward Voltage<br>–––<br>–––<br>1.3<br>V<br>Reverse RecoveryTime<br>–––<br>24<br>36<br>ns<br>Reverse RecoveryCharge<br>–––<br>20<br>30<br>nC<br>Forward Turn-On Time<br>Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)<br>TJ= 25°C, IS= 42A, VGS= 0V<br>TJ= 25°C, IF= 42A, VDD= 28V<br>di/dt = 100A/μs<br>~~a~~<br>~~GG CS~~<br>~~Se~~<br>~~A A~~<br>~~en~~<br>~~ee~~<br>~~®~~<br>~~a (~~||



Notes: ) Repetitive rating;  pulse width limited by © Limited by TJmax , see Fig.12a, 12b, 15, 16 for typicalJmax , see Fig.12a, 12b, 15, 16 for typical , see Fig.12a, 12b, 15, 16 for typical a max. junction temperature. (See fig. 11). repetitive avalanche performance. 

© Limited by TJmax , see Fig.12a, 12b, 15, 16 for typicalJmax , see Fig.12a, 12b, 15, 16 for typical , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. 

- @ Limited by TJmax, starting TJ = 25°C, L = 0.13mH © RG = 25 Ω , IAS = 42A, VGS =10V. Part not recommended for use above this value. @ 

This value determined from sample failure population. 100% tested to this value in production. 

@ When mounted on 1" square PCB (FR-4 or G-10 Material) . For recommended footprint and soldering techniques refer to application note #AN-994 

Pulse width ≤ 1.0ms; duty cycle ≤ 2%. 

Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS . 

θ 

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## **Qualification Information[†]** 

|**Qualification Information[†]**|**Qualification Information[†]**|||
|---|---|---|---|
|**Qualification Level**||Automotive<br>(per AEC-Q101)††||
|||Comments:<br>This part number(s) passed Automotive qualification.<br>IR’s<br>Industrial and<br>Consumer qualification<br>level is<br>granted<br>by<br>extension of the higher Automotive level.||
|**Moisture Sensitivity Level**||D-PAK|MSL1|
|**ESD**|Machine Model|Class M4 (+/- 700V)<br>†††<br>AEC-Q101-002||
||Human Body Model|Class H1C (+/- 1500V)<br>†††<br>AEC-Q101-001||
||Charged Device<br>Model|Class C5 (+/- 2000V)<br>†††<br>AEC-Q101-005||
|**RoHS Compliant**||Yes||



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1000<br>VGS<br>TOP           15V<br>10V8.0V AQ<br>7.0V<br>6.0V gor<br>5.5V<br>100 5.0V anni ma<br>BOTTOM _—— 4.5V ——S<br>LP ——— eo<br>oF il<br>10 Zaina<br>en ee eee ll<br>4.5V ≤ 60μs PULSE WIDTH<br>Tj = 25°C<br>wail<br>1 Danii eT<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 1.   Typical Output Characteristics<br>1000<br>FS)<br>ee ee ee —— eee<br>100<br>at} TJ = 175°C<br>Se —<br>10 ee 2 ee<br>PF ff T = 25°C fo |<br>J<br>1 ey Ly ee ee<br>pf [ff |<br>ee nt ee VDS  re = 25V<br>0.1 |aefj|| ≤ 60μs PULSE WIDTH<br>2 4 6 8 10<br>VGS, Gate-to-Source Voltage (V)<br>) (Α<br>ID, Drain-to-Source Current<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

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1000<br>VGS<br>TOP           15V<br>10V<br>8.0V | | et TT<br>7.0V<br>6.0V<br>5.5V Pa eanll<br>100 BOTTOM 5.0V4.5V J|<br>ooeH<br>Fre<br>a xcemmennl el<br>10 Zegna 4.5V<br>a ee eee ll<br>≤ 60μs PULSE WIDTH<br>Tj = 175°C<br>1 ieaeT|<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 2.   Typical Output Characteristics<br>120<br>Oo TJ = 25°C<br>100 eo<br>80<br>4 TJ = 175°C<br>60 J —<br>40 tA |<br>/<br>V4<br>20<br>I VDS = 10V<br>380μs PULSE WIDTH<br>fo<br>0<br>0 20 40 60 80 100<br>ID,Drain-to-Source Current (A)<br>ID, Drain-to-Source Current (A)<br>Gfs, Forward Transconductance (S)<br>**----- End of picture text -----**<br>


**Fig 4.** Typical Forward Transconductance vs. Drain Current 

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5000 20<br>VGS   = 0V,       f = 1 MHZ ID= 42A<br>4000 7 CCiss rss    = C = Cgs gd + Cgd,  Cds SHORTED 16 es V VDS= 28V DS= 44V ee ee<br>C = C + C<br>oss   ds  gd VDS= 11V<br>. aan<br>3000 mL C iss I 12 _— a7,YA _|<br>2<br>UU dL UI 8 1G<br>2000 ll) «=§ Fv<br>1000 a C oss ||| ee 4 |eeYT T_<br>Crss 0<br>ee] |Oo A<br>0 0 20 40 60 80 100<br>1 10 100<br> QG  Total Gate Charge (nC)<br>VDS, Drain-to-Source Voltage (V)<br>Fig 5.   Typical Capacitance vs. Fig 6.   Typical Gate Charge vs.<br>Drain-to-Source Voltage Gate-to-Source Voltage<br>1000.00 10000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br>1000<br>100.00<br>T = 175°C<br>J<br>100<br>100μsec<br>10.00<br>10 1msec<br>1.00 10msec<br>TJ = 25°C 1 °<br>Tc = 25 C<br>Tj = 175°C<br>V GS  = 0V Single Pulse D C<br>0.10 oe 0.1 sie acer<br>0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 1 10 100<br>VSD, Source-to-Drain Voltage (V) VDS  , Drain-toSource Voltage (V)<br>VGS, Gate-to-Source Voltage (V)<br>C, Capacitance(pF)<br>ISD, Reverse Drain Current (A) ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

**Fig 8.** Maximum Safe Operating Area 

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100 2.5<br>LIMITED BY PACKAGE ID = 42A<br>V GS  = 10V<br>80<br>S|) 2.0<br>Tm] PLEEEELE<br>60 tt Ppp<br>1.5<br>Oe! PELE EAL<br>40<br>——— OCELA<br>200 Pe)Py TT| | yy| hy\ 1.0 EaPEELE E<br>0.5<br>25 50 75 100 125 150 175<br>-60 -40 -20 0 20 40 60 80 100 120 140 160 180<br> TC , Case Temperature (°C)<br>TJ , Junction Temperature (°C)<br>Fig 9.   Maximum Drain Current vs. Fig 10.   Normalized On-Resistance<br>Case Temperature vs. Temperature<br>10<br>1<br>D = 0.50<br>0.20<br>0.1 0.100.05 τ J τ J R1R1 R2R2 R3R3 τ C τ Ri 0.3854      0.000251(°C/W) τ i (sec)<br>0.02 0.01 τ 1 τ 1 τ 2 τ 2 τ 3 τ 3 0.3138      0.001092<br>0.01 Ci=  τ i / Ri 0.4102      0.015307<br>Ci i / Ri<br>Notes:<br>SINGLE PULSE<br>1. Duty Factor D = t1/t2<br>( THERMAL RESPONSE )<br>0.001 rr | | ri HE | ET 2. Peak Tj = P dm x Zthjc + Tc 1<br>1E-006 1E-005 0.0001 0.001 0.01 0.1<br>t1 , Rectangular Pulse Duration (sec)<br>ID , Drain Current (A)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>Thermal Response ( Z thJC )<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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15V<br>VDS L DRIVER<br>RG D.U.T +<br>- [V][DD]<br>IAS<br>f<br>2V0VGS<br>tp 0.01 Ω<br>t h.<br>**----- End of picture text -----**<br>


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Fig 12a.   Unclamped Inductive Test Circuit<br>V(BR)DSS<br>_. tp<br>IAS a AaL<br>**----- End of picture text -----**<br>


**Fig 12b.** Unclamped Inductive Waveforms 

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QG<br>QGS | QGD<br>VG<br>Charge<br>**----- End of picture text -----**<br>


**Fig 13a.** Basic Gate Charge Waveform 

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L<br>VCC<br>DUT<br>0<br>1K<br>gl i:<br>**----- End of picture text -----**<br>


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500<br>                 I D<br>TOP          7.6A<br>400                 11A<br>BOTTOM   42A<br>300<br>Nan<br>200<br>PAE<br>100<br>SS<br>0 aS<br>25 50 75 100 125 150 175<br>Starting TJ, Junction Temperature (°C)<br>Fig 12c.   Maximum Avalanche Energy<br>vs. Drain Current<br>4.0 Pat | ft |<br>ID = 1.0mA<br>3.5 I D  = 250μA<br>3.0 P|eetLeeWNNeane OSS I D  = 100μA<br>eee Nae<br>2.5 NN<br>2.0 eePt t | ft yteeete<br>1.5 P| tA<br>P| tTft |tTtfdE dTft dTfpTWNyd<br>1.0<br>-75 -50 -25 0 25 50 75 100 125 150 175<br>TJ , Temperature ( °C )<br>fF | | | | | | | ft ft |<br>EAS, Single Pulse Avalanche Energy (mJ)<br>VGS(th) Gate threshold Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 14.** Threshold Voltage vs. Temperature 

**Fig 13b.** Gate Charge Test Circuit 

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1000<br>Duty Cycle = Single Pulse<br>100 Allowed avalanche Current vs<br>0.01 avalanche  pulsewidth,  tav<br>assuming Δ Tj = 25°C due to<br>avalanche losses<br>0.05<br>10<br>0.10<br>1<br>0.1<br>1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01<br>tav (sec)<br>Fig 15.   Typical Avalanche Current vs.Pulsewidth<br>120<br>Notes on Repetitive Avalanche Curves , Figures 15, 16:<br>TOP          Single Pulse<br>(For further info, see AN-1005 at www.irf.com)<br>BOTTOM   1% Duty Cycle<br>100 I = 42A 1. Avalanche failures assumption:<br>D<br>1   Purely a thermal phenomenon and failure occurs at a<br>    temperature far in excess of Tjmax. This is validated for<br>80     every part type.<br>2. Safe operation in Avalanche is allowed as long asTjmax is<br>  not exceeded.<br>60 3. Equation below based on circuit and waveforms shown in<br>ANTE<br>  Figures 12a, 12b.<br>40 4. PD (ave) = Average power dissipation per single<br>BORE RNNGHEEE     avalanche pulse.<br>5. BV = Rated breakdown voltage (1.3 factor accounts for<br>20     voltage increase during avalanche).<br>6. Iav = Allowable avalanche current.<br>HE RREEANNUEE<br>7.  Δ T = Allowable rise in junction temperature, not to exceed<br>TEE NSA<br>0     Tjmax (assumed as 25°C in Figure 15, 16).<br>25 50 75 100 125 150 175   tav = Average time in avalanche.<br>  D = Duty cycle in avalanche =  tav ·f<br>Starting TJ , Junction Temperature (°C)   ZthJC(D, tav) = Transient thermal resistance, see figure 11)<br>EAR , Avalanche Energy (mJ)<br>Avalanche Current (A)<br>**----- End of picture text -----**<br>


- ZthJC(D, tav) = Transient thermal resistance, see figure 11) 

## **PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC Iav = 2 T/ [1.3·BV·Zth]** 

- **EAS (AR) = PD (ave)·tav** 

**Fig 16.** Maximum Avalanche Energy vs. Temperature 

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Driver Gate Drive<br>P.W.<br>D.U.T + { P.W. + Period ——— — D = —— Period<br>) [©)] Circuit    • Layout Considerations | V t t GS=10<br>| — - •   GroundLow StrayPlane Inductance<br>•   CurrentLow LeakageTransformerInductance ®@ D.U.T. ISD Waveform<br>+<br>Reverse<br>@ - a | = - ® + RecoveryCurrent r Body Diode ForwardCurrent di/dt /\ ——<br>® D.U.T. VDS Waveform Diode Recoverydv/dt ‘<br>00 we VDD<br>ma<br>•  Re-Applied<br>•   Driver same type as D.U.T. + Voltage Body Diode  Forward Drop<br>Re (4 •   vidt controlled by Rg Vo p - Inductor Curent<br>•<br>D.U.T. - Device Under Test e s<br>Isp controlled by Duty Factor "D" @ Ripple  ≤ 5% ISD<br>**----- End of picture text -----**<br>


**Fig 17.** eak Diode Recovery dv/dt Test Circuit or N-Channel HEXFET ® ower MOSFETs 

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 1 s<br> 0.1 %<br>**----- End of picture text -----**<br>


**Fig 18a.** Switching Time Test Circuit 

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VDS<br>90%<br>10%<br>VGS |\< v e > !\ v i e<br>td(on) tr td(off) tf<br>**----- End of picture text -----**<br>


**Fig 18b.** Switching Time Waveforms 

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TR TRR TRL<br>OOOO O © t oo Oo oO<br>16.3 ( .641 ) 16.3 ( .641 )<br>15.7 ( .619 ) 15.7 ( .619 )<br>12.1 ( .476 ) FEED DIRECTION 8.1 ( .318 ) FEED DIRECTION<br>11.9 ( .469 ) 7.9 ( .312 )<br>NOTES :<br>1.  CONTROLLING DIMENSION : MILLIMETER.<br>2.  ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).<br>3.  OUTLINE CONFORMS TO EIA-481 & EIA-541.<br>  13 INCH<br>@ C QX S/ :<br>16 mm |<br>NOTES :<br>**----- End of picture text -----**<br>


NOTES : 

1.  CONTROLLING DIMENSION : MILLIMETER. 

2.  ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3.  OUTLINE CONFORMS TO EIA-481 & EIA-541. 

1. OUTLINE CONFORMS TO EIA-481. 

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## **Ordering Information** 

|**Base part number**|**Package Type**|**Standard Pack**|**Standard Pack**|**Complete Part Number**|
|---|---|---|---|---|
|||**Form**|**Quantity**||
|AUIRFR1010Z|Dpak|Tube|**Quantity**<br>75|AUIRFR1010Z|
||Dpak|Tape and Reel|2000|AUIRFR1010ZTR|
|||Tape and Reel<br>Tape and Reel Left|3000|AUIRFR1010ZTRL|
|||Tape and Reel Left<br>Tape and Reel Right|3000|AUIRFR1010ZTRR|



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