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AUIRFP4568-E
Power MOSFET, N Channel, 150 V, 171 A, 4800 µohm, TO-247AC, Through Hole
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single MOSFETs
- MSL: -
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Channel Type: N Channel
- Product Range: HEXFET
- Qualification: AEC-Q101
- Power Dissipation: 517W
- Transistor Mounting: Through Hole
- Rds(on) Test Voltage: 10V
- Transistor Case Style: TO-247AC
- Drain Source Voltage Vds: 150V
- Operating Temperature Max: 175°C
- Continuous Drain Current Id: 171A
- Drain Source On State Resistance: 4800µohm
- Gate Source Threshold Voltage Max: 5V
| Delivery and price | |
|---|---|
| Units per pack | 250 |
| Price | 5.19 € |
| Current stock | 500+ |
| Lead time | 30 days |
Datasheet
~~Cinfineon~~
AUIRFP4568 AUIRFP4568-E ~~pO~~
**AUTOMOTIVE GRADE**
**Features VDSS 150V** Advanced Planar Technology Ultra Low On-Resistance **RDS(on) typ. 4.8m** Dynamic dv/dt Rating **max. 5.9m** 175°C Operating Temperature Fast Switching ~~==~~ **ID 171A** Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * **Description** S Specifically designed for Automotive applications, this D S G D G HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon TO-247AC Long Lead TO-247AC area. Additional features of this design are a 175°C junction AUIRFP4568 AUIRFP4568-E operating temperature, fast switching speed and improved **G D S** repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in ~~ee~~ Gate Drain Source Automotive applications and a wide variety of other applications. **Standard Pack Base part number Package Type Orderable Part Number Form Quantity** AUIRFP4568 TO-247AC Tube 25 AUIRFP4568 ~~—————————~~ AUIRFP4568-E Long Lead TO-247AC Tube 25 AUIRFP4568-E **Absolute Maximum Ratings** Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
|**Symbol**|**Parameter**|**Max.**|**Units**|
|---|---|---|---|
|ID@ TC= 25°C|Continuous Drain Current, VGS@ 10V|171|A|
|ID @TC= 100°C|Continuous Drain Current,VGS @10V|121||
|IDM|Pulsed Drain Current|684||
|PD@TC= 25°C|Maximum Power Dissipation|517|W|
|~~——————~~|Linear Derating Factor<br>~~——————~~|3.45<br>~~eee~~|W/°C<br>~~eee~~|
|VGS<br>~~——————~~|Gate-to-SourceVoltage<br>~~——————~~|±30<br>~~eee~~|V<br>~~eee~~|
|EAS<br>~~——————~~|Single Pulse Avalanche Energy (ThermallyLimited) <br>~~——————~~|763<br>~~eee~~|mJ<br>~~eee~~|
|IAR<br>~~——————~~|Avalanche Current<br>~~——————~~|See Fig.14,15, 22a, 22b<br>~~eee~~|A<br>~~eee~~|
|EAR<br>~~——————~~|Repetitive Avalanche Energy <br>~~——————~~||mJ<br>~~eee~~|
|dv/dt<br>~~——————~~<br>~~pf~~|Peak Diode Recoverydv/dt<br>~~——————~~<br>~~pf~~|18.5<br>~~eee~~|V/ns<br>~~eee~~|
|TJ<br>TSTG<br>~~——————~~<br>~~pf~~|Operating Junction and<br>Storage Temperature Range<br>~~—————— ~~<br>~~pf~~|-55 to + 175<br> ~~eee~~|°C<br>~~eee~~|
|~~pf~~|SolderingTemperature,for 10 seconds(1.6mm from case)<br>~~pf~~|300||
|~~pf~~|Mountingtorque,6-32 or M3 screw<br>~~pf~~|10 lbf•in(1.1N•m)<br>||
1 ~~—~~
2019-04-29
AUIRFP4568/AUIRFP4568-E
**Static @ TJ = 25°C (unless otherwise specified)**
|Qg<br>~~a~~|Total Gate Charge|–––|151|227|nC|ID= 103A<br>VDS= 75V<br>VGS= 10V|
|---|---|---|---|---|---|---|
|g<br>Qgs|Gate-to-Source Charge|–––|52|–––|||
|Qgd<br>~~a~~<br>~~ee~~|Gate-to-Drain Charge<br>~~a~~|–––<br>~~a~~|55<br>~~a~~|–––<br>~~a~~|||
|gd<br>Qsync<br><br>~~ee~~|Total Gate Charge Sync. (Qg–Qgd)<br>~~a~~|–––<br>~~a~~|96<br>~~a~~|–––<br>~~a~~|||
|sync<br>td(on)<br><br>~~ee~~<br>~~a~~<br>~~es~~|ggd<br>Turn-On Delay Time<br>~~a~~|–––<br>~~a~~|27<br>~~a~~|–––<br>~~a~~|ns|VDD= 98V<br>ID= 103A<br>RG= 1.0<br>VGS= 10V<br>~~ee~~|
|d(on)<br>tr<br>~~es~~|Rise Time|–––|119|–––|||
|td(off)<br>~~es~~|Turn-Off DelayTime|–––|47|–––|||
|d(off)<br>tf<br>~~a~~<br>~~a~~|Fall Time<br>|–––<br>|84<br>|–––<br>|||
|Ciss<br>~~a~~<br>~~a~~|Input Capacitance<br>|––– 10470 –––<br>|––– 10470 –––<br>|––– 10470 –––<br>|pF<br>~~EE~~<br>~~Ge GO~~|VGS= 0V<br>VDS= 50V<br>ƒ= 1.0MHz,See Fig. 5<br>~~ee~~|
|Coss<br>~~a~~<br>~~a~~|Output Capacitance<br>|–––<br>|977<br>|–––<br>|||
|Crss<br>~~a ~~|ReverseTransferCapacitance<br> ~~a~~|–––<br>~~a~~|203<br>~~a~~|–––<br>~~a~~|||
|Coss eff.(ER)<br>~~a ~~<br>~~EE~~|Effective Output Capacitance (Energy Related)<br> <br>~~EE~~|–––<br><br>~~EE~~|897<br><br>~~EE~~<br>~~FO~~|–––<br><br>~~EE~~<br>~~FO~~||VGS=0V, VDS=0V to 120V<br> (see fig.11)<br>~~ee~~<br>~~EE~~<br>~~GO~~|
|Coss eff.(TR)<br>~~EE~~<br>~~a a~~|Effective Output Capacitance(Time Related)<br>~~EE~~<br>~~a~~|–––<br>~~EE~~<br>~~a~~|1272<br>~~EE~~<br>~~a~~<br>~~FO~~|–––<br>~~EE~~<br>~~a~~<br>~~FO~~||VGS= 0V,VDS= 0V to 120V<br>~~EE~~<br>~~GO~~|
|**Diode Characteristics**<br>~~FO~~<br>~~Ge GO~~<br>~~po~~|||||||
|~~po~~|**Parameter **<br>|**Min.**<br>|**Typ. M**<br>|**. Max.**<br>|**Units**<br>|**Conditions**<br>|
|IS<br>~~poee~~|Continuous Source Current<br>(Body Diode)<br>~~ee~~|–––<br>~~ee~~|–––<br>~~ee~~|171<br>~~ee~~|A<br>~~ee~~|MOSFET symbol<br>showing the<br>integral reverse<br>p-n junction diode.<br>~~ee~~|
|ISM<br>~~ee~~|Pulsed Source Current<br>(Body Diode)<br>~~ee~~|–––<br>~~ee~~|–––<br>~~ee~~|684<br>~~ee~~|||
|VSD<br>~~ee~~|DiodeForwardVoltage<br>~~ee~~|–––<br>~~ee~~|–––<br>~~ee~~|1.3<br>~~ee~~|V<br>~~ee~~|TJ= 25°C,IS= 103A,VGS=0V<br>~~ee~~|
|trr<br>~~i~~|Reverse Recovery Time<br>~~i~~|–––<br>~~i~~|110<br>~~i~~|–––<br>~~i~~|ns<br>~~i~~|TJ =25°C<br>~~V =100V~~<br>~~i~~|
|||–––<br>~~i~~|133<br>~~i~~|–––<br>~~i~~||TJ= 125°C<br>~~V~~R~~=100V~~<br>~~i~~|
|Qrr<br>~~a~~|Reverse Recovery Charge<br>~~a~~|–––<br>~~a~~|515<br>~~a~~|–––<br>~~a~~|nC <br>~~a~~|TJ= 25°C<br>IF= 103A<br>~~a~~|
|||–––<br>~~a~~|758<br>~~a~~|–––<br>~~a~~||<br>TJ= 125°C<br>~~di/dt = 100A/µs~~<br>~~a~~|
|IRRM<br>~~a~~<br>~~a~~|ReverseRecovery Current<br>~~a~~<br>~~a~~|–––<br>~~a~~<br>~~a~~|8.8<br>~~a~~<br>~~a~~|–––<br>~~a~~<br>~~a~~|A<br>~~a~~<br>~~a~~|TJ= 25°C<br>~~di/dt = 100A/µs~~<br>~~a~~<br>~~a~~|
|ton<br>~~a~~|Forward Turn-On Time<br>~~a~~|Intrinsic turn-on time is negligible(turn-on is dominated byLS+LD)<br>~~a~~|||||
**Notes:**
> Repetitive rating; pulse width limited by max. junction temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.144mH, RG = 25, IAS = 103A, VGS =10V. Part not recommended for use above this value.
ISD 103A, di/dt 360A/µs, VDD V(BR)DSS, TJ 175°C.
Pulse width 400µs; duty cycle 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
- Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS.
- R is measured at TJ of approximately 90°C.
2 2019-04-29 ~~a~~
AUIRFP4568/AUIRFP4568-E ~~a~~
## ~~Cinfineon~~
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1000<br>VGS<br>TOP 15V<br>10V aA<br>100 8.0V 7.0V<br>6.0V<br>5.5V<br>5.0V<br>10 BOTTOM 4.5V<br>1 == ere<br>60µs PULSE WIDTH<br>Tj = 25°C<br>0.1<br>4.5V<br>0.01<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>
**Fig. 1** Typical Output Characteristics
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1000<br>T J = 175°C<br>100<br>TJ = 25°C<br>10<br>ra<br>1<br>PAGER<br>VDS = 50V<br>60µs PULSE WIDTH<br>0.1<br>3 iifon 4 5 6 7 8 9<br>VGS, Gate-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>
**Fig. 3** Typical Transfer Characteristics
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1000000<br>VGS = 0V, f = 1 MHZ<br>Ciss = C gs + Cgd, C ds SHORTED<br>Crss = Cgd<br>100000<br>He Coss = Cds + Cgd<br>10000 C iss<br>Coss<br>nie<br>1000<br>aie Crss ll<br>100<br>Bite<br>BH A<br>10<br>1 10 100 1000<br>VDS, Drain-to-Source Voltage (V)<br>C, Capacitance (pF)<br>**----- End of picture text -----**<br>
**Fig 5.** Typical Capacitance vs. Drain-to-Source Voltage
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1000<br>VGS<br>TOP 15V<br>10V<br>8.0V<br>7.0V<br>6.0V<br>5.5V<br>100 5.0V<br>BOTTOM 4.5V<br>10<br>4.5V a [ee]<br>60µs PULSE WIDTH<br>Tj = 175°C<br>1<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig. 2 Typical Output Characteristics<br>3.0<br>I D = 103A<br>VGS = 10V<br>2.5<br>2.0<br>1.5<br>BUDDDNDZA0UE<br>1.0<br>BUND ZA0EEEE<br>0.5<br>-60 DHTULET -40 -20 0 20 40 60 80 100 120 140160 180<br>TJ , Junction Temperature (°C)<br>RDS(on) , Drain-to-Source On Resistance (Normalized)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>
**Fig. 4** Normalized On-Resistance vs. Temperature
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14.0<br>ID= 103A<br>12.0<br>VDS= 120V<br>10.0 po, VDS | = 75V<br>VDS= 30V<br>8.0<br>6.0<br>—- G-<br>==<br>4.0<br>A+<br>2.0<br>0.0 fi<br>0 50 100 150 200<br> QG, Total Gate Charge (nC)<br>VGS, Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>
**Fig 6.** Typical Gate Charge vs. Gate-to-Source Voltage
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1000 10000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br>4 1000 SSS aa SSS SSS SSS SSSES<br>T J = 175°C TJ = 25°C<br>100 THAR) Ce 100µsec<br>100<br>1msec<br>10 DC<br>10 10msec<br>| 1 PRR Tc = 25°C<br>Tj = 175°C<br>V GS = 0V Single Pulse<br>1.0 0.1<br>0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0.1 1 10 100 1000<br>GEGEGS PE<br>VSD, Source-to-Drain Voltage (V) VDS, Drain-to-Source Voltage (V)<br>Fig. 7 Typical Source-to-Drain Diode Fig 8. Maximum Safe Operating Area<br> Forward Voltage<br>180 190<br>Id = 5mA<br>160 185<br>S54 180 (gee<br>140 Cece eee<br>175<br>SS Z|<br>120<br>170<br>Se SeGSe052G008<br>100<br>165<br>80<br>160<br>60 Heer 155 Coa<br>40 150<br>20 SSS 145 Hee<br>TNSn Se 140 cossssitttSCO<br>0<br>-60 -40 -20 0 20 40 60 80 100 120 140160 180<br>25 50 75 100 125 150 175<br>TJ , Temperature ( °C )<br> TC , Case Temperature (°C)<br>Maximum Drain Current vs. Case Temperature Fig 10. Drain-to-Source Breakdown Voltage<br>12.0 3500<br>ID<br>tt<br>3000 TOP 21.5A<br>10.0<br>29.3A<br>2500 BOTTOM 103A<br>NananE<br>8.0<br>RNEEEE<br>2000<br>6.0<br>1500<br>A<br>4.0<br>1000<br>PAGELE<br>2.0<br>500<br>ST<br>0.0 0 it PSS<br>0 20 40 60 80 100 120 140 160 25 50 75 100 125 150 175<br>Starting TJ , Junction Temperature (°C)<br>ID, Drain Current (A)<br>EAS , Single Pulse Avalanche Energy (mJ)<br>V(BR)DSS, Drain-to-Source Breakdown Voltage (V)<br>Energy (µJ)<br>ISD, Reverse Drain Current (A) ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>
**Fig 9.** Maximum Drain Current vs. Case Temperature
**Fig 10.** Drain-to-Source Breakdown Voltage
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12.0<br>10.0<br>8.0<br>6.0<br>4.0<br>2.0<br>0.0<br>0 20 40 60 80 100 120 140 160<br>VDS, Drain-to-Source Voltage (V)<br>Energy (µJ)<br>**----- End of picture text -----**<br>
**Fig 12.** Maximum Avalanche Energy vs. Drain Current
**Fig 11.** Typical COSS Stored Energy 4 2019-04-29 ~~re~~
~~Cinfineon~~
AUIRFP4568/AUIRFP4568-E ~~LLL~~
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1<br>D = 0.50<br>0.1<br>0.20<br>Co ar<br>0.10 R 1 R1 R 2 R2 R 3 R3 Ri (°C/W) I (sec)<br>0.01 ree |e 0.02 0.05 0.01 J J1 1 2 2 3 3 C C ee 0.06336 0.11088 0.000278 0.005836<br>Ci= iRi<br>Ci= iRi 0.11484 0.053606<br>0.001<br>Notes:<br>SINGLE PULSE<br>1. Duty Factor D = t1/t2<br>( THERMAL RESPONSE )<br>2. Peak Tj = P dm x Zthjc + Tc<br>eeBl<br>0.0001<br>1E-006 1E-005 0.0001 0.001 0.01 0.1<br>t1 , Rectangular Pulse Duration (sec)<br>Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case<br>1000<br>Duty Cycle = Single Pulse Allowed avalanche Current vs avalanche<br>pulsewidth, tav, assuming Tj = 150°C and<br>erie eS Tstart =25°C (Single Pulse) ee Eas<br>100<br>YT 0.01<br>0.05<br>PSSST<br>10<br>=== 0.10 ORR EMER ee —<br>1<br>Allowed avalanche Current vs avalanche<br>pulsewidth, tav, assuming j = 25°C and<br>Tstart = 150°C.<br>sesame wi<br>0.1<br>1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01<br>tav (sec)<br>Avalanche Current (A)<br>Thermal Response ( Z thJC ) °C/W<br>**----- End of picture text -----**<br>
**Fig 14.** Avalanche Current vs. Pulse width
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900 Notes on Repetitive Avalanche Curves , Figures 14, 15:<br>TOP Single Pulse<br>aan (For further info, see AN-1005 at www.infineon.com)<br>800 BOTTOM 1.0% Duty Cycle<br>Nal ID = 103A 1. Avalanche failures assumption:<br>700<br>600 excess of Tjmax. This is validated for every part type. jmax. This is validated for every part type. . This is validated for every part type.<br>CN Po<br>2. Safe operation in Avalanche is allowed as long as Tjmaxjmax is not exceeded.<br>500 BNANER EEE<br>4. PD (ave) = Average power dissipation per single avalanche pulse. D (ave) = Average power dissipation per single avalanche pulse. = Average power dissipation per single avalanche pulse.<br>400<br>CPNSN TET<br>during avalanche).<br>300200 PTL BREEN AATAAL ENEEEE EEE 7. 6. Iav T = = Allowable avalanche current. Allowable rise in junction temperature, not to exceed<br>25°C in Figure 14, 15).<br>100 PITT TINNITUS tav = Average time in avalanche.<br>D = Duty cycle in avalanche = tav ·f<br>0 PPE TE TY [NWA] ZthJC(D, tav) = Transient thermal resistance, see Figures 13) thJC(D, tav) = Transient thermal resistance, see Figures 13) (D, tav) = Transient thermal resistance, see Figures 13) av) = Transient thermal resistance, see Figures 13) ) = Transient thermal resistance, see Figures 13)<br>25 50 75 100 125 150 175<br>Starting TJ , Junction Temperature (°C) PD (ave) = 1/2 ( 1.3·BV·Iav) = D (ave) = 1/2 ( 1.3·BV·Iav) = = 1/2 ( 1.3·BV·Iav) = av) = ) = T/ ZthJC<br>EAR , Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>
- Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. jmax. This is validated for every part type. . This is validated for every part type.
2. Safe operation in Avalanche is allowed as long as Tjmaxjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 22a, 22b.
4. PD (ave) = Average power dissipation per single avalanche pulse. D (ave) = Average power dissipation per single avalanche pulse. = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche).
- Allowable rise in junction temperature, not to exceed Tjmax (assumed as
- 25°C in Figure 14, 15).
- ZthJC(D, tav) = Transient thermal resistance, see Figures 13) thJC(D, tav) = Transient thermal resistance, see Figures 13) (D, tav) = Transient thermal resistance, see Figures 13) av) = Transient thermal resistance, see Figures 13) ) = Transient thermal resistance, see Figures 13)
**PD (ave) = 1/2 ( 1.3·BV·Iav) = D (ave) = 1/2 ( 1.3·BV·Iav) = = 1/2 ( 1.3·BV·Iav) = av) = ) =** **T/ ZthJC Iav = 2** **T/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav**
**Fig 15.** Maximum Avalanche Energy
vs. Temperature
2019-04-29
5
AUIRFP4568/AUIRFP4568-E
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6.05.5 r | | ft ft ff ty {4<br>5.0 ptt ttt | ty<br>4.5<br>CPPS<br>4.0 CSS OSECE<br>3.5 CCAS CPS<br>3.0 I D = 250µA St<br>2.5 ID = 1.0mA ZanNGn<br>ID = 1.0A<br>2.0<br>SEEBNG<br>1.5<br>1.0 FERRER ERE<br>-75 -50 -25 0 25 50 75 100 125 150 175<br>TJ , Temperature ( °C )<br>VGS(th), Gate threshold Voltage (V)<br>**----- End of picture text -----**<br>
**Fig 16.** Threshold Voltage vs. Temperature
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70<br>IF = 103A<br>60 V R = 100V<br>TJ = 25°C<br>50<br>TJ = 125°C<br>40 | Ffee|<br>jo mee<br>30<br>fete<br>20<br>ple | |<br>10<br>we | |<br>0 Pot ft ft<br>0 200 400 600 800 1000<br>diF /dt (A/µs)<br>IRR (A)<br>**----- End of picture text -----**<br>
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60<br>IF = 68A<br>50 V R = 100V<br>pt |.<br>TJ = 25°C<br>40 T J = 125°C |<br>p<<br>30 LT<br>|<br>£4<br>20<br>re<br>10 | | if<br>we<br>0 [|| fl<br>0 200 400 600 800 1000<br>diF /dt (A/µs)<br>IRR (A)<br>**----- End of picture text -----**<br>
**Fig. 17** - Typical Recovery Current vs. dif/dt
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3600<br>IF = 68A<br>3200<br>VR = 100V<br>2800 T J = 25°C<br>TJ = 125°C<br>2400<br>oeToT<br>2000<br>ets<br>1600<br>ry<br>1200 ea ae<br>800<br>|<br>400 Poe] TT<br>0 200 400 600 800 1000<br>diF /dt (A/µs)<br>(nC)<br>RR<br>Q<br>QRR (A)<br>**----- End of picture text -----**<br>
**Fig. 18** - Typical Recovery Current vs. dif/dt
**Fig. 19** - Typical Stored Charge vs. dif/dt
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4000<br>3600 IF = 103A |fT<br>VR = 100V<br>3200 T J = 25°C TIT<br>2800 T J = 125°C Pte<br>2400<br>2000 Pt | | tl<br>1600 | | lr<br>1200 |t| o le |t<br>800 | KF |<br>400 | of—+~— t-{| | oT|<br>0 200 400 600 800 1000<br>diF /dt (A/µs)<br>(nC)<br>RR<br>Q<br>QRR (A)<br>**----- End of picture text -----**<br>
**Fig. 20** - Typical Stored Charge vs. dif/dt
6
2019-04-29
AUIRFP4568/AUIRFP4568-E ~~——————————— lis~~
**Fig 21.** Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
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15V<br>L DRIVER<br>VDS<br>R G D.U.T +<br>- [V][DD]<br>20V JL IAS<br>ae tp Y 0.01<br>**----- End of picture text -----**<br>
**Fig 22a.** Unclamped Inductive Test Circuit
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V(BR)DSS<br>tp ><br>**----- End of picture text -----**<br>
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IAS<br>**----- End of picture text -----**<br>
**Fig 22b.** Unclamped Inductive Waveforms
**Fig 23a.** Switching Time Test Circuit
**Fig 23b.** Switching Time Waveforms
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Id<br>Vds !<br>Vgs<br>'{!<br>f<br>Vgs(th) ! H<br>! i<br>1 H 1 1 |<br>9»<br>Qgs1 itt Qgs2 Qgd ' Qgodr '<br>**----- End of picture text -----**<br>
**Fig 24a.** Gate Charge Test Circuit
**Fig 24b.** Gate Charge Waveform
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AUIRFP4568/AUIRFP4568-E ~~LLL~~
**TO-247AC Package Outline** (Dimensions are shown in millimeters (inches))
## **TO-247AC Part Marking Information**
**==> picture [331 x 148] intentionally omitted <==**
**----- Start of picture text -----**<br>
Part Number AUIRFP4568<br>Date Code<br>IR Logo T éaR YWWA Y= Year<br>WW= Work Week<br><br>XX XX<br>[|<br>Lot Code<br>**----- End of picture text -----**<br>
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AUIRFP4568/AUIRFP4568-E ~~LLL~~
**Long Lead TO-247AC Package Outline** (Dimensions are shown in millimeters (inches))
## **Long Lead TO-247AC Part Marking Information**
**==> picture [331 x 148] intentionally omitted <==**
**----- Start of picture text -----**<br>
Part Number AUIRFP4568-E<br>Date Code<br>IR Logo T éaR YWWA Y= Year<br>WW= Work Week<br><br>XX XX<br>a<br>Lot Code<br>**----- End of picture text -----**<br>
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|**Qualification Information**|**Qualification Information**|||
|---|---|---|---|
|**Qualification Level**||Automotive<br>(per AEC-Q101)||
|||Comments: This part number(s) passed Automotive qualification. Infineon’s<br>Industrial and Consumer qualification level is granted by extension of the higher<br>Automotive level.||
|**Moisture Sensitivity Level**||TO-247AC|N/A|
|||LongLead TO-247AC||
|**ESD**|Machine Model|Class M4 (+/- 800V)† <br>AEC-Q101-002||
||Human Body Model|Class H3A (+/- 6000V)† <br>AEC-Q101-001||
||Charged Device Model|Class C5 (+/- 2000V)† <br>AEC-Q101-005||
|**RoHS Compliant**||Yes||
† Highest passing voltage.
## **Revision History**
|**Date**||**Comments**|
|---|---|---|
|||Updated datasheet with corporate template|
|10/21/2015||Removed obsolete parts “AUIRFP4568E” on all pages|
|||Corrected orderingtable onpage 1.|
|4/29/2019||Added AUIRFP4568-E (Long Lead TO-247AC)package –all pages|
**Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2015 All Rights Reserved.**
## **IMPORTANT NOTICE**
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office (www.infineon.com).
## **WARNINGS**
Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
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Updated at April 29, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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