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AUIRFP4110
Power MOSFET, N Channel, 100 V, 120 A, 3700 µohm, TO-247AC, Through Hole
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single MOSFETs
- MSL: -
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Channel Type: N Channel
- Product Range: HEXFET
- Qualification: AEC-Q101
- Power Dissipation: 370W
- Transistor Mounting: Through Hole
- Rds(on) Test Voltage: 10V
- Transistor Case Style: TO-247AC
- Drain Source Voltage Vds: 100V
- Operating Temperature Max: 175°C
- Continuous Drain Current Id: 120A
- Drain Source On State Resistance: 3700µohm
- Gate Source Threshold Voltage Max: 4V
| Delivery and price | |
|---|---|
| Units per pack | 250 |
| Price | 3.51 € |
| Current stock | 500+ |
| Lead time | 30 days |
Datasheet
~~Cinfin eon~~
> **AUTOMOTIVE GRADE** AUIRFP4110 ~~Cinfin eon —~~ HEXFET[® ] Power MOSFET **Features** Advanced Process Technology D **VDSS 100V** Ultra Low On-Resistance **RDS(on) typ. 3.7m** Enhanced dV/dT and dI/dT capability **max 4.5m** 175°C Operating Temperature G Fast Switching **ID (Silicon Limited) 180A**
> Repetitive Avalanche Allowed up to Tjmax ~~==~~ S **ID (Package Limited) 120A** Lead-Free, RoHS Compliant Automotive Qualified * **Description** Specifically designed for Automotive applications, this HEXFET[[®]] Power MOSFETs utilizes the latest processing techniques to S achieve low on-resistance per silicon area. Additional features of G D this design are a 175°C junction operating temperature, fast TO-247AC switching speed and improved repetitive avalanche rating. These AUIRFP4110 features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide **G D S**
> variety of other applications. ~~———=~~ Gate Drain Source **Standard Pack Base part number Package Type Orderable Part Number Form Quantity** AUIRFP4110 TO-247AC Tube 25 AUIRFP4110
## **Description**
Specifically designed for Automotive applications, this HEXFET[[®]] Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
## **Absolute Maximum Ratings**
|~~————_———~~|**Parameter**<br>~~————_———~~|**Max.**<br>~~————_———~~|**Units**|
|---|---|---|---|
|ID @TC= 25°C<br>~~————_———~~|Continuous Drain Current, VGS @10V(Silicon Limited)<br>~~————_———~~|180<br>~~————_———~~|A<br>~~ee~~|
|ID @TC= 100°C Continuous Drain Current, V<br>~~————_———~~|= 100°C Continuous Drain Current, VGS @10V(Silicon Limited)<br>~~————_———~~|130<br>~~————_———~~||
|ID@ TC= 25°C<br>~~————_———~~<br>~~aes~~|Continuous Drain Current, VGS@ 10V (Package Limited)<br>~~————_———~~<br>~~ee~~|120<br>~~————_———~~<br>~~ee~~||
|IDM<br>~~————_———~~<br>~~es~~|Pulsed Drain Current<br>~~————_———~~<br>~~ee~~|670<br>~~————_———~~<br>~~ee~~||
|PD @TC= 25°C<br>~~————_———~~<br>~~es~~|Maximum Power Dissipation<br>~~————_———~~<br>~~ee~~|370<br>~~————_———~~<br>~~ee~~|W<br>~~ee~~|
|~~es~~<br>~~————_——_——_—~~|Linear DeratingFactor<br>~~ee~~<br>~~————_——_——_—~~|2.5<br>~~ee~~<br>~~————_——_——_—~~|W/°C<br>~~ee~~<br>~~————_——_——_—~~|
|VGS<br>~~————_——_——_—~~|Gate-to-SourceVoltage<br>~~————_——_——_—~~|± 20<br>~~————_——_——_—~~|V<br>~~————_——_——_—~~|
|EAS(Thermallylimited)<br>~~————_——_——_—~~|Single Pulse Avalanche Energy <br>~~————_——_——_—~~|190<br>~~————_——_——_—~~|mJ<br>~~————_——_——_—~~|
|IAR<br>~~—~~|Avalanche Current|108|A|
|EAR<br>~~—~~|Repetitive Avalanche Energy |37|mJ|
|dv/dt<br>~~a~~<br>~~pf~~|Peak Diode Recovery <br>~~(OO~~<br>~~pf~~|5.3<br>~~(OO~~|V/ns<br>~~(OO~~|
|TJ<br>TSTG<br>~~pf~~|Operating Junction and<br>Storage Temperature Range<br>~~pf~~|-55 to + 175|°C<br>~~es~~|
|~~pf~~<br>~~ee~~|SolderingTemperature,for 10 seconds (1.6mm fromcase)<br>~~pf~~<br>~~es~~|300<br>~~es~~||
|~~pf~~<br>~~ee~~|MountingTorque,6-32 or M3 Screw<br>~~pf~~<br>~~es~~|10 lbf·in(1.1 N·m)<br>~~es~~|~~es~~|
HEXFET® is a registered trademark of Infineon.
***** Qualification standards can be found at www.infineon.com
1
2017-09-15
AUIRFP4110 ~~LL~~
## ~~Cinfin eon~~
**Static @ TJ = 25°C (unless otherwise specified)**
|**Parameter**<br>**Min.**<br>**Typ. Max. Units**<br>**Conditions**<br>V(BR)DSS<br>Drain-to-Source Breakdown Voltage<br>100<br>–––<br>–––<br>V<br>VGS= 0V, ID= 250µA<br>V(BR)DSS/TJBreakdown Voltage Temp. Coefficient<br>––– 0.108 –––<br>V/°C Reference to 25°C, ID= 5mA<br>RDS(on)<br>Static Drain-to-Source On-Resistance<br>–––<br>3.7<br>4.5<br>mVGS= 10V, ID= 75A<br>VGS(th)<br>Gate Threshold Voltage<br>2.0<br>–––<br>4.0<br>V<br>VDS= VGS, ID= 250µA<br>IDSS<br>Drain-to-Source Leakage Current<br>–––<br>–––<br>20<br>µAVDS=100 V,VGS= 0V<br>–––<br>–––<br>250<br>VDS=100V,VGS= 0V,TJ=125°C<br>IGSS<br>Gate-to-Source Forward Leakage<br>–––<br>–––<br>100<br>nAVGS= 20V<br>Gate-to-SourceReverseLeakage<br>–––<br>–––<br>-100<br>VGS= -20V<br>RG<br>Gate Resistance<br>–––<br>1.3<br>–––<br><br>gfs<br>Forward Trans conductance<br>160<br>–––<br>–––<br>S<br>VDS= 50V,ID= 75A<br>~~ee~~<br>~~IS ts Os I~~<br>~~ee~~<br>~~nD nD nD I~~<br>~~ee~~<br>~~ee ee~~<br>~~ee~~<br>~~Ds I nD ts~~<br>~~eenD~~<br>~~nn I~~<br>~~es~~<br>~~rs~~<br>~~rs tt~~<br>~~tt~~<br>~~pe~~<br>~~Pf ft~~<br>~~i}~~<br>~~ee~~<br>~~ed~~<br>~~PO~~<br>~~es~~<br>~~(Rs(Ss~~||
|---|---|
|**Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)**||
|Qg<br>Total Gate Charge<br>–––<br>150<br>210<br>nC<br>ID= 75A<br>Qgs<br>Gate-to-Source Charge<br>–––<br>35<br>–––<br>VDS= 50V<br>Qgd<br>Gate-to-Drain Charge<br>–––<br>43<br>–––<br>VGS= 10V<br>td(on)<br>Turn-On DelayTime<br>–––<br>25<br>–––<br>ns<br>VDD= 65V<br>tr<br>Rise Time<br>–––<br>67<br>–––<br>ID= 75A<br>td(off)<br>Turn-Off DelayTime<br>–––<br>78<br>–––<br>RG= 2.6<br>tf<br>Fall Time<br>–––<br>88<br>–––<br>VGS= 10V<br>~~eeee~~<br>~~es~~<br>~~———————~~<br>~~ne~~<br>~~a es~~<br>~~aea~~<br>~~ee~~<br>~~a es~~<br>~~es ee~~<br>~~a es~~<br>~~es~~||
|Ciss<br>Input Capacitance<br>–––<br>9620<br>–––<br>VGS= 0V||
|pF<br>Coss<br>Output Capacitance<br>–––<br>670<br>–––<br>VDS= 50V<br>Crss<br>Reverse Transfer Capacitance<br>–––<br>250<br>–––<br>ƒ= 1.0MHz<br>Coss eff.(ER)<br>Effective Output Capacitance<br>(EnergyRelated)<br>–––<br>820<br>–––<br>VGS= 0V, VDS= 0V to 80V<br>Coss eff.(TR)<br>Output Capacitance(Time Related)<br>–––<br>950<br>–––<br>VGS= 0V,VDS= 0V to 80V<br>~~eeeeee~~<br>~~ee~~<br>~~a ee~~<br>~~ee ee ee~~<br>~~eers~~<br>~~ts~~<br>~~rs I fers~~||
|**Diode Characteristics**||
|**Parameter **<br>**Min.**<br>**Typ. Max.Units**<br>**Conditions**<br>IS<br>Continuous Source Current<br>–––<br>––– 180<br>A<br>MOSFET symbol<br>(BodyDiode)<br>showing the<br>ISM<br>Pulsed Source Current<br>–––<br>–––<br>670<br>integral reverse<br>(Body Diode)<br>p-n junction diode.<br>D<br>S<br>G<br>~~esnD~~<br>~~RD Rd (~~<br>~~fp~~<br>~~eeeee~~||
|VSD<br>Diode Forward Voltage<br>–––<br>–––<br>1.3<br>V<br>TJ= 25°C,IS= 75A,VGS= 0V||
|trr<br>Reverse Recovery Time<br>–––<br>50<br>75<br>nsTJ =25°CVDD= 85V<br>–––<br>60<br>90<br>TJ =125°CIF= 75A,||
|Qrr<br>Reverse Recovery Charge<br>–––<br>94<br>140<br>nCTJ =25°Cdi/dt = 100A/µs<br>–––<br>140<br>210<br>TJ =125°C <br>IRRM<br>Reverse Recovery Current<br>–––<br>3.5<br>–––<br>A<br>TJ= 25°C <br>~~a ee cee~~<br>~~Ff LT~~<br>~~a es~~<br>~~ee ee~~||
|**Notes:**||
|<br>Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 120A. Note that||
|current limitations arising from heating of the device leads may occur with some lead mounting arrangements.||
|Repetitive rating; pulse width limited by max. junction temperature.||
Limited by TJmax, starting TJ = 25°C, L = 0.033mH, RG = 25, IAS = 108A, VGS =10V. Part not recommended for use above this value.
- ISD 75A, di/dt 630A/µs, VDD V(BR)DSS, TJ 175°C.
- Pulse width 400µs; duty cycle 2%.
- Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
- Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS.
- R is measured at TJ approximately 90°C.
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2017-09-15
AUIRFP4110 ~~Ld~~
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1000 1000<br>VGS VGS<br>TOP 15V TOP 15V<br>10V 10V<br>8.0V 8.0V<br>6.0V 6.0V<br>5.5V 5.5V<br>5.0V 5.0V<br>4.8V 4.8V<br>BOTTOM 4.5V BOTTOM 4.5V 4.5V<br>100 100 gf<br>4.5V<br>60µs PULSE WIDTH 60µs PULSE WIDTH<br>Tj = 25°C Tj = 175°C<br>10 10<br>0.1 1 10 100 0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)<br>Fig 2. Typical Output Characteristics<br>Fig 1. Typical Output Characteristics<br>1000 3.0<br>ID = 75A<br>VGS = 10V<br>2.5<br>100<br>HA 2.0 ut<br>T = 25°C<br>10 J<br>1.5<br>T = 175°C<br>J<br>1 HAH et<br>1.0<br>VDS = 25V<br>60µs PULSE WIDTH<br>0.1 PTT<br>0.5<br>1 LAPT 2 3 4 5 6 7 raneeaAnaT<br>-60 -40 -20 0 20 40 60 80 100 120 140160 180<br>VGS, Gate-to-Source Voltage (V) TJ , Junction Temperature (°C)<br>Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance vs. Temperature<br>100000 12.0<br>VGS = 0V, f = 1 MHZ<br>Ciss = C gs + Cgd, C ds SHORTED ID= 75A<br>C rss = C gd 10.0<br>Coss = Cds + Cgd VDS= 80V<br>10000 Ll] Ciss 8.0 FEE VDS= 50V<br>al a el 6.0 pf<br>C<br>oss<br>1000 4.0<br>C<br>rss<br>ee 2.0<br>100 0.0<br>1 Tit 10 100 = AE 0 50 100 150 200<br>VDS, Drain-to-Source Voltage (V) QG, Total Gate Charge (nC)<br>Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage<br>3 2017-09-15<br>a<br>ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A)<br>RDS(on) , Drain-to-Source On Resistance (Normalized)<br>C, Capacitance (pF)<br>VGS, Gate-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>
AUIRFP4110
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1000 10000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS (on)<br>T = 175°C<br>J<br>100 1000<br>T = 25°C 100µsec<br>J<br>10 a7 ae 100 sii nN,<br>10 msec<br>1 10 DC 1m sec<br>Tc = 25°C<br>Tj = 175°C<br>VGS = 0V Single Pulse<br>0.1 1<br>0.0 0.5 1.0 1.5 2.0 0 1 10 100 1000<br>VSD, Source-to-Drain Voltage (V) VDS, Drain-to-Source Voltage (V)<br>Fig 8. Maximum Safe Operating Area<br>Fig 7. Typical Source-Drain Diode Forward Voltage<br>180 125<br>Id = 5mA<br>160 Sm P|<br>Limited By Package 120<br>140<br>pf CECE Here<br>115<br>ae aZa<br>120<br>100 NS 110 CCEA<br>80 ee 105 BERD Zann<br>60 ee ATT<br>100<br>40<br>95<br>p | {| | | \ ATT<br>20 P| | fl N<br>90<br>0 ee CEE<br>-60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>25 50 75 100 125 150 175<br>TJ , Temperature ( °C )<br> TC , Case Temperature (°C)<br>Fig 9. Maximum Drain Current vs. Case Temperature Fig 10. Drain-to–Source Breakdown Voltage<br>5.0 800<br>ID<br>4.5 700 NER<br>TOP 17A<br>4.0 27A<br>600 KU<br>BOTTOM 108A<br>3.5<br>500 PAE ELLE<br>3.0<br>2.5 400 SRNR<br>2.0<br>300<br>NAPE<br>1.5<br>200<br>1.0 PENN [ETT] EE Et<br>100<br>0.5 SSSR<br>0.0 0 PEEL| | CASS LT<br>0 20 40 60 80 100 120 25 50 75 100 125 150 175<br>Starting TJ , Junction Temperature (°C)<br>V(BR)DSS, Drain-to-Source Breakdown Voltage (V)<br>ID, Drain Current (A)<br>EAS , Single Pulse Avalanche Energy (mJ)<br>ISD, Reverse Drain Current (A) ID, Drain-to-Source Current (A)<br>Energy (µJ)<br>**----- End of picture text -----**<br>
**Fig 10.** Drain-to–Source Breakdown Voltage
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5.0<br>4.5<br>4.0<br>3.5<br>3.0<br>2.5<br>2.0<br>1.5<br>1.0<br>0.5<br>0.0<br>0 20 40 60 80 100 120<br>VDS, Drain-to-Source Voltage (V)<br>Fig 11. Typical Coss Stored Energy<br>Energy (µJ)<br>**----- End of picture text -----**<br>
**Fig 12.** Threshold Voltage vs. Temperature
4 2017-09-15 ~~——-_-—~~
AUIRFP4110 ~~LL~~
## ~~Cinfineon~~
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1<br>TE Tm<br>D = 0.50<br>0.1<br>0.20<br>0.10<br>0.05<br>0.01 i ere 0.02<br>0.01 J J 1 1 R 1 R 1 2 R 2 2 R 2 R 33 R 3 3 C C 0.098762510.2066697 R i (°C /W ) 0.0017430.000111 i (sec )<br>0.001 SINGLE PULSE C iC i= = iR ii R i 0.09510464 0.012269<br>( THERMAL RESPONSE ) Notes:<br>1. Duty Factor D = t1/t2<br>2. Peak Tj = P dm x Zthjc + Tc<br>0.0001 ENa smi|| il<br>1E-006 1E-005 0.0001 0.001 0.01 0.1<br>t1 , Rectangular Pulse Duration (sec)<br>Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case<br>1000<br>Duty Cycle = Single Pulse<br>Allowed avalanche Current vs avalanche<br>100 pulsewidth, tav, assuming Tj = 150°C and<br>Tstart =25°C (Single Pulse)<br>Beet SRE<br>Soe<br>0.01<br>0.05<br>10<br>0.10<br>psi Saal<br>1<br>ie<br>Allowed avalanche Current vs avalanche<br>pulsewidth, tav, assuming j = 25°C and<br>Tstart = 150°C.<br>a |eel<br>0.1<br>1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01<br>tav (sec)<br>Fig 14. Avalanche Current vs. Pulse width<br>250<br>TOP Single Pulse Notes on Repetitive Avalanche Curves , Figures 14, 15:<br>BOTTOM 1.0% Duty Cycle (For further info, see AN-1005 at www.irf.com)<br>200 I D = 108A 1.Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in<br>1 excess of Tjmax. This is validated for every part type.<br>2. Safe operation in Avalanche is allowed as long asTjmax is not<br> exceeded.<br>150<br>3. Equation below based on circuit and waveforms shown in Figures<br>NTT 22a,22b.<br>4. PD (ave) = Average power dissipation per single avalanche pulse.<br>100 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase<br> during avalanche).<br>BASSSUHEEE 6. Iav = Allowable avalanche current.<br>7. T = Allowable rise in junction temperature, not exceed Tjmax<br>50 (assumed as 25°C in figure 14 , 15).<br>LENT tav = Average time in avalanche.<br> D = Duty cycle in avalanche = tav ·f<br>LEELA. ZthJC (D, tav) = Transient thermal resistance, see Figures 13)<br>0<br>25 50 75 100 125 150 175 PD (ave) = 1/2 ( 1.3·BV·Iav) = D (ave) = 1/2 ( 1.3·BV·Iav) = = 1/2 ( 1.3·BV·Iav) = av) = ) = T/ ZthJCthJC<br>Starting TJ , Junction Temperature (°C) Iav = 2av = 2 = 2 T/ [1.3·BV·Zth] th] ]<br>EAR , Avalanche Energy (mJ)<br>Avalanche Current (A)<br>Thermal Response ( Z thJC )<br>**----- End of picture text -----**<br>
- Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type.
3. Equation below based on circuit and waveforms shown in Figures 22a,22b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche).
- **PD (ave) = 1/2 ( 1.3·BV·Iav) = D (ave) = 1/2 ( 1.3·BV·Iav) = = 1/2 ( 1.3·BV·Iav) = av) = ) =** **T/ ZthJCthJC Iav = 2av = 2 = 2** **T/ [1.3·BV·Zth] th] ] E AS (AR) = PD (ave)·t av**
**Fig 15.** Maximum Avalanche Energy vs. Temperature
5 2017-09-15 ~~=——14TT/S7]7700W.0IQ00?|~~
2017-09-15
AUIRFP4110 ~~L~~
## ~~Cinfin eon~~
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4.0<br>3.5<br>SLO<br>3.0<br>PSST<br>2.5<br>TEBSALPR<br>ID = 250µA<br>2.0<br>ID = 1.0mA ZaNNGEe<br>ID = 1.0A<br>1.5<br>LLNS<br>1.0 SEGGANe<br>0.5 CCCP<br>-75 -50 -25 0 25 50 75 100 125 150 175 200<br>TJ , Temperature ( °C )<br>VGS(th), Gate threshold Voltage (V)<br>**----- End of picture text -----**<br>
**Fig 16.** Threshold Voltage vs. Temperature
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25<br>IF = 30A<br>VR = 85V<br>To<br>20<br>TJ = 25°C<br>TJ = 125°C<br>ee<br>15<br>AA<br>10 eZee<br>Ww<br>5<br>|<br>Marne<br>0<br>0 200 400 600 800 1000<br>diF /dt (A/µs)<br>IRR (A)<br>**----- End of picture text -----**<br>
**Fig 17.** Typical Recovery Current vs. dif/dt
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25<br>IF = 45A<br>VR = 85V<br>20<br>TJ = 25°C<br>TJ = 125°C<br>15<br>| bE<br>| Bel<br>10<br>IY<br>5 4 |<br>0 Tt |<br>0 200 400 600 800 1000<br>diF /dt (A/µs)<br>IRR (A)<br>**----- End of picture text -----**<br>
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560<br>IF = 30A<br>V = 85V<br>480 R<br>TJ = 25°C<br>T = 125°C<br>400 J<br>oor<br>320<br>tS<br>ncaa<br>240<br>ET<br>160<br>80 Vann<br>0 200 400 600 800 1000<br>diF /dt (A/µs)<br>QRR (A)<br>**----- End of picture text -----**<br>
**Fig 18.** Typical Recovery Current vs. dif/dt
**Fig 19.** Typical Stored Charge vs. dif/dt
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560<br>IF = 45A<br>V = 85V<br>480 R<br>| |e<br>TJ = 25°C<br>T = 125°C<br>400 J ane<br>maa<br>320<br>240<br>64m<br>160 ie|<br>Bann<br>80<br>0 200 400 600 800 1000<br>diF /dt (A/µs)<br>Fig 20. Typical Stored Charge vs. dif/dt<br>QRR (A)<br>**----- End of picture text -----**<br>
6 2017-09-15 ~~TWO =~~
~~Cinfi~~
AUIRFP4110 ~~a~~
**Fig 21.** Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET[® ] Power MOSFETs
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15V<br>VDS L DRIVER<br>R G D.U.T +<br>- [V][DD]<br>IAS<br>20V<br>tp 0.01<br>**----- End of picture text -----**<br>
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IAS<br>**----- End of picture text -----**<br>
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V(BR)DSS<br>tp ><br>**----- End of picture text -----**<br>
**Fig 22a.** Unclamped Inductive Test Circuit
**Fig 22b.** Unclamped Inductive Waveforms
**Fig 23a.** Switching Time Test Circuit
**Fig 23b.** Switching Time Waveforms
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Vds H! Id<br>Vgs<br>f<br>Vgs(th)<br>Qgs1 Qgs2 Qgd Qgodr<br>**----- End of picture text -----**<br>
**Fig 24a.** Gate Charge Test Circuit
**Fig 24b.** Gate Charge Waveform
2017-09-15
7
~~Cinfin eon~~
AUIRFP4110 ~~LL~~
## TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
## TO-247AC Part Marking Information
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Part Number AUIRFP4110<br>Date Code<br>IR Logo T é4R YWWA Y= Year<br>WW= Work Week<br><br>XX XX<br>A= Automotive, LeadFree<br>[|<br>Lot Code<br>**----- End of picture text -----**<br>
TO-247AC package is not recommended for Surface Mount Application.
8
2017-09-15
|**Qualification Level**|**Qualification Level**|Automotive<br>(per AEC-Q101)|Automotive<br>(per AEC-Q101)|
|---|---|---|---|
|||Comments: This part number(s) passed Automotive qualification.<br>Infineon’s Industrial and Consumer qualification level is granted by ex-<br>tension of the higher Automotive level.||
|**Moisture Sensitivity Level**||TO-247AC|N/A|
|**ESD**|Machine Model|Class M4 (+/- 800)†<br>AEC-Q101-002||
||Human Body Model|Class H3A (+/- 6000V)†<br>AEC-Q101-001||
||Charged Device Model|Class C5 (+/- 2000)†<br>AEC-Q101-005||
|**RoHS Compliant**||Yes||
- Highest passing voltage.
**Revision History**
|**Date**|||**Comments**|
|---|---|---|---|
|9/15/2017||Updated datasheet with corporate template||
|||Corrected typo error onpart markingonpage 8.|e 8.|
**Published by Infineon Technologies AG 81726 München, Germany**
**© Infineon Technologies AG 2015 All Rights Reserved.**
## **IMPORTANT NOTICE**
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office (www.infineon.com).
## **WARNINGS**
Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not ~~_~~ be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
9
2017-09-15
Updated at April 29, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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