AUIRFN8459TR

**AUTOMOTIVE GRADE** AUIRFN8459 ~~ToRRectiier<é$sé‘ar”)llmCLULLrLlLlle«§«-—s«s«—~~ **Features**  Advanced Process Technology **VDSS 40V** 

- Dual N-Channel MOSFET 

- Ultra Low On-Resistance 

- 175°C Operating Temperature 

- Fast Switching 

- Repetitive Avalanche Allowed up to Tjmax 

|**VDSSDSS**|**40V**|
|---|---|
|**RDS(on) typ.**<br> **max**|**4.8m**|
||**5.9m**|
|**ID (Silicon Limited)**|**70A**|
|**ID (Package Limited)**|**50A**|



- Lead-Free, RoHS Compliant 

- Automotive Qualified * 

## **Description** 

Specifically designed for Automotive applications, this HEXFET[®] Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast swithcing speed and improved repetitive avalanche rating. These features combine to make this product an extremely efficient and reliable device for use in Automotive and wide variety of other applications. 

## **Applications** 

- 12V Automotive Systems 

||DUAL PQFN 5X6 mm|DUAL PQFN 5X6 mm|
|---|---|---|
|G|D|S|
|Gate|Drain|Source|



- Brushed DC Motor 

- Braking 

- Transmission 

|**Base Part Number**|**Package Type**|**Standard Pack**|**Standard Pack**|**Orderable Part Number**|
|---|---|---|---|---|
|||**Form**|**Quantity**||
|AUIRFN8459|Dual PQFN 5mm x 6mm|Tape and Reel|4000|AUIRFN8459TR|



## **Absolute Maximum Ratings** 

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.   These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolutemaximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified. 

|~~ee~~<br>~~re~~|**Parameter**<br>~~ef~~<br>|**Max.**<br>~~ef~~<br>|**Units**<br>~~ef~~<br>|
|---|---|---|---|
|ID@ TC (Bottom) =25°C<br>~~ee~~<br>~~reBe~~|Continuous Drain Current, VGS@ 10V<br>~~ef~~<br>~~Be~~|70<br>~~ef~~<br>~~Be~~|A<br>~~ef~~<br>~~Be~~|
|C (Bottom)<br>ID @TC(Bottom)= 100°C<br>~~reBe~~<br>~~ee~~|Continuous Drain Current,VGS @10V<br>~~Be~~<br>~~ee~~|50<br>~~Be~~<br>~~ee~~||
|ID @TC(Bottom)= 25°C<br>~~Be~~<br>~~ee~~<br>~~ee~~|Continuous Drain Current,VGS @10V(Package Limited)<br>~~Be~~<br>~~ee~~<br>~~ee~~|50<br>~~Be~~<br>~~ee~~<br>~~ee~~||
|IDM<br>~~Be~~<br>~~ee~~<br>~~ee~~<br>~~rs~~|Pulsed Drain Current<br>~~Be~~<br>~~ee~~<br>~~ee~~|320<br>~~Be~~<br>~~ee~~<br>~~ee~~||
|PD @TC **(Bottom)**= 25°C<br>~~ee~~<br>~~rs~~|Power Dissipation<br>~~ee~~|50<br>~~ee~~|W|
|~~rs~~<br>~~re~~|Linear DeratingFactor<br>~~re~~|0.33<br>~~re~~|W/°C<br>~~re~~|
|VGS<br>~~ef~~<br>~~ee~~|Gate-to-Source Voltage<br>~~ef~~<br>~~ee~~|± 20<br>~~ef~~<br>~~ee~~|V<br>~~ef~~|
|EAS<br>~~ee~~|Single Pulse Avalanche Energy (ThermallyLimited) <br>~~ee~~|66<br>~~ee~~|mJ|
|EAS(Tested)<br>~~ee~~<br>~~eee~~|Single Pulse Avalanche Energy <br>~~ee~~<br>~~eee~~|110<br>~~ee~~<br>~~eee~~||
|IAR<br>~~eee~~<br>~~ee~~|Avalanche Current<br>~~eee~~|See Fig. 14, 15, 22a, 22b<br>~~eee~~<br>~~|~~|A<br>~~|~~|
|EAR<br>~~eee~~<br>~~ee~~|Repetitive Avalanche Energy <br>~~eee~~||~~|~~|
|TJ<br>TSTG<br>~~eee~~<br>~~ee~~<br>~~a ~~|Operating Junction and<br>Storage Temperature Range<br>~~eee~~<br> ~~ee~~|-55  to + 175<br>~~eee~~<br>~~|~~<br>~~ee~~|°C<br>~~|~~<br>~~ee~~|



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AUIRFN8459 

## **Thermal Resistance** 

|**Thermal Resistance**||
|---|---|
|**Symbol**<br>**Parameter**<br>**Typ.**<br>**Max.**<br>**Units**||
|RJC (Bottom)<br>Junction-to-Case<br>–––<br>3.0||
|°C/W<br>RJC (Top)<br>Junction-to-Case<br>–––<br>45<br>RJA<br>Junction-to-Ambient<br>–––<br>105||
|RJA (<10s)<br>Junction-to-Ambient<br>–––<br>80||
|**Static Electrical Characteristics@ TJ = 25°C(unless otherwise specified) **||
|**Symbol**<br>**Parameter**<br>**Min.**<br>**Typ. Max. Units**<br>**Conditions**<br>V(BR)DSS<br>Drain-to-Source Breakdown Voltage<br>40<br>–––<br>–––<br>V<br>VGS= 0V,ID= 250µA<br>V(BR)DSS/TJ<br>Breakdown Voltage Temp. Coefficient<br>–––<br>0.037<br>–––<br>V/°C Reference to 25°C,ID= 1.0mA<br>RDS(on)<br>Static Drain-to-Source On-Resistance<br>–––<br>4.8<br>5.9<br>m VGS= 10V,ID= 40A<br>VGS(th)<br>Gate Threshold Voltage<br>2.2<br>3.0<br>3.9<br>V<br>VDS= VGS,ID= 50µA<br>~~es~~<br>~~I (RD (OO S(O~~<br>~~a GS~~<br>~~(OO I(~~<br>~~Pfa~~||
|gfs<br>Forward Transconductance<br>66<br>–––<br>–––<br>S<br>VDS= 10V,ID= 40A<br>RG<br>Internal Gate Resistance<br>–––<br>1.9<br>–––<br><br>IDSS<br>Drain-to-Source Leakage Current<br>–––<br>–––<br>1.0<br>µA<br>VDS= 40V,VGS= 0V<br>–––<br>–––<br>150<br>VDS= 40V, VGS= 0V, TJ= 125°C<br>IGSS<br>Gate-to-Source Forward Leakage<br>–––<br>–––<br>100<br>nA<br>VGS= 20V<br>Gate-to-Source Reverse Leakage<br>–––<br>–––<br>-100<br>VGS= -20V<br>**Dynamic Electrical Characteristics@ TJ = 25°C(unless otherwise specified) **<br>~~——————~~<br>~~SE~~<br>~~YY————~~||
|**Symbol**<br>**Parameter**<br>**Min.**<br>**Typ. Max. Units**<br>**Conditions**||
|Qg<br>Total Gate Charge<br>–––<br>40<br>60<br>ID= 40A||
|nC<br>Qgs<br>Gate-to-Source Charge<br>–––<br>13<br>–––<br>VDS= 20V<br>Qgd<br>Gate-to-Drain("Miller")Charge<br>–––<br>14<br>–––<br>VGS= 10V||
|Qsync<br>Total Gate Charge Sync. (Qg- Qgd)<br>–––<br>26<br>–––<br>ID= 40A, VDS=0V, VGS= 10V||
|td(on)<br>Turn-On DelayTime<br>–––<br>10<br>–––<br>ns<br>VDD= 26V<br>tr<br>Rise Time<br>–––<br>55<br>–––<br>ID= 40A<br>td(off)<br>Turn-Off DelayTime<br>–––<br>25<br>–––<br>RG= 2.7<br>tf<br>Fall Time<br>–––<br>42<br>–––<br>VGS= 10V<br>Ciss<br>Input Capacitance<br>–––<br>2250<br>–––<br>pF<br>VGS= 0V<br>Coss<br>Output Capacitance<br>–––<br>340<br>–––<br>VDS= 25V<br>Crss<br>Reverse Transfer Capacitance<br>–––<br>215<br>–––<br>ƒ= 1.0 MHz<br>Cosseff.(ER)<br>Effective Output Capacitance(EnergyRelated)<br>–––<br>400<br>–––<br>VGS= 0V,VDS= 0V to 32V<br>Coss eff.(TR)<br>Effective Output Capacitance (TimeRelated)<br>–––<br>490<br>–––<br>VGS=0V,VDS=0Vto 32V<br>~~esnn~~<br>~~es~~<br>~~oe~~<br>~~———————~~<br>~~rr~~||
|**Diode Characteristics**||
|**Symbol**<br>**Parameter**<br>**Min.**<br>**Typ. Max. Units**<br>**Conditions**<br>IS<br>Continuous Source Current<br>–––<br>–––<br>70<br>A<br>MOSFET symbol<br>(BodyDiode)<br>showing  the<br>ISM<br>Pulsed Source Current<br>–––<br>–––<br>320<br>A<br>integral reverse<br>(BodyDiode) <br>p-njunction diode.<br>VSD<br>DiodeForwardVoltage<br>–––<br>–––<br>1.3<br>V<br>TJ= 25°C,IS= 40A,VGS=0V<br>dv/dt<br>Peak Diode Recovery <br>–––<br>7.0<br>–––<br>V/ns TJ= 175°C,IS= 40A,VDS= 40V<br>trr <br>Reverse Recovery Time<br>–––<br>22<br>–––<br>ns<br>TJ= 25°C<br>–––<br>23<br>–––<br>TJ= 125°C<br>Qrr<br>Reverse Recovery Charge<br>–––<br>17<br>–––<br>nC<br>TJ= 25°C<br>–––<br>17<br>–––<br>TJ= 125°C<br>IRRM<br>Reverse RecoveryCurrent<br>–––<br>1.0<br>–––<br>A<br>TJ= 25°C<br>~~V~~R~~= 34V,~~<br>~~IF = 40A~~<br>di/dt = 100A/µs<br>~~pT~~<br>~~rr~~<br>~~es~~<br>~~Te~~<br>~~IE~~<br>at<br>~~a~~<br>~~OR~~<br>~~OU OOO (OO~~<br>~~EE~~<br>~~ee ee~~<br>~~ERE EE~~<br>~~a GD~~<br>~~(OO(OO~~||



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AUIRFN8459<br>TOR<br>1000 1000<br>VGS VGS<br>TOP           15V TOP           15V<br>10V 10V<br>8.0V 8.0V<br>100 7.0V 7.0V<br>6.0V 6.0V<br>5.0V 100 5.0V<br>4.5V 4.5V<br>BOTTOM 4.3V BOTTOM 4.3V<br>10 2) eZ<br>Pil al 10 py a<br>1 4.3V<br>a<br>4.3V  60µs PULSE WIDTH  60µs PULSE WIDTH<br>Tj = 25°C Tj = 175°C<br>0.1 ah et 1 ailWA<br>0.1 1 10 100 0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)<br>Fig. 1  Typical Output Characteristics  Fig. 2  Typical Output Characteristics<br>1000 1.8<br>ID = 40A<br>1.6 VGS = 10V<br>100<br>1.4<br>Toe TJ = 175 ° C OL<br>10 1.2<br>Gay 450 SEURREDZAE<br>TJ = 25°C 1.0<br>1<br>VDS = 10V 0.8 ae an<br>OP [sama]  60µs PULSE WIDTH<br>0.1<br>ime 0.6 TLE<br>2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0<br>-60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>VGS, Gate-to-Source Voltage (V)<br>TJ , Junction Temperature (°C)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>ID, Drain-to-Source Current (A)<br>ID, Drain-to-Source Current (A)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig. 3** Typical Transfer Characteristics 

**Fig. 4** Normalized On-Resistance vs. Temperature 

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10000 14<br>VCGS  iss    = C = 0V,       f = 1 MHZgs + Cgd,  C ds SHORTED 12 ID= 40A VDS= 32V<br>C rss    = C gd  VDS= 20V<br>C oss   = C ds  + C gd 10 V DS=  8.0V<br>Ciss<br>8<br>1000<br>At TTT Tih fh<br>6<br>Coss 4<br>pean - 42mm<br>Crss<br>2<br>tS TT<br>0<br>100<br>billig 0 POE 10 20 30 40 50 60<br>1 10 100<br> QG  Total Gate Charge (nC)<br>VDS, Drain-to-Source Voltage (V)<br>C, Capacitance (pF)<br>VGS, Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 5.** Typical Capacitance vs. Drain-to-Source Voltage 

**Fig 6.** Typical Gate Charge vs. Gate-to-Source Voltage 

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AUIRFN8459<br>TOR<br>1000<br>1000<br>100 100 100µsec<br>TJ = 175°C<br>1msec<br>10 10 Limited by<br>Package<br>_ e/aeee TJ = 25°C aise<br>OPERATION IN THIS AREA<br>LIMITED BY R DS (on) 1 0 m se c<br>1 ff 1 e Ge<br>Tc = 25°C<br>Tj = 150°C DC<br>VGS = 0V Single Pulse<br>0.1 Filieooe 0.1 a<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.1 1 10 100<br>VSD, Source-to-Drain Voltage (V) VDS,  Drain-toSource Voltage (V)<br>Fig. 7  Typical Source-to-Drain Diode  Fig 8.   Maximum Safe Operating Area<br>70 50<br>Id = 1.0mA<br>Limited By  Package<br>60<br>48<br>pee Po AALLEELEL AALLEELEL<br>50<br>40 SPS 46 TAT<br>30<br>20 aeSEEINGSEEING 44 LEELA77<br>42<br>10 SanEae rE ELE<br>TEE LIN ALLELE<br>0 40<br>25 50 75 100 125 150 175 -60 -40 -20 0 20 40 60 80 100120140160180120140160180140160180160180180<br> TC , Case Temperature (°C) TJ , Temperature ( °C )<br>ISD, Reverse Drain Current (A)<br>V(BR)DSS, Drain-to-Source Breakdown Voltage (V)<br>ID,  Drain-to-Source Current (A)<br>ID,  Drain Current (A)<br>**----- End of picture text -----**<br>


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70 50<br>Id = 1.0mA<br>Limited By  Package<br>60<br>48<br>pee Po AALLEELEL AALLEELEL<br>50<br>40 SPS 46 TAT<br>30<br>44<br>20 aeSEEINGSEEING LEELA77<br>42<br>10 SanEae rE ELE<br>TEE LIN ALLELE<br>0 40<br>25 50 75 100 125 150 175 -60 -40 -20 0 20 40 60 80 100120140160180120140160180140160180160180180<br> TC , Case Temperature (°C) TJ , Temperature ( °C )<br>Maximum Drain Current vs. Case Temperature  Fig 10.   Drain-to–Source Breakdown Voltage<br>0.30 20.0<br>VGS = 5.5V<br>0.25 TL VGS = 6.0V<br>16.0 V GS  = 7.0V<br>0.20 VGS = 8.0V<br>VGS = 10V<br>ae a php<br>0.15 12.0<br>0.10<br>aa<br>8.0<br>0.05 TAT y |)<br>0.00 a 4.0 eZ<br>0 10 20 30 40 0 50 100 150 200<br>VDS, Drain-to-Source Voltage (V) ID, Drain Current (A)<br>V(BR)DSS, Drain-to-Source Breakdown Voltage (V)<br>)<br><br>m<br>RDS(on),  Drain-to -Source On Resistance (<br>ID,  Drain Current (A)<br>Energy (µJ)<br>**----- End of picture text -----**<br>


**Fig 9.** Maximum Drain Current vs. Case Temperature 

**Fig 10.** Drain-to–Source Breakdown Voltage 

**Fig 11.** Typical Coss Stored Energy 

**Fig 12.** Typical On-Resistance vs. Drain Current 

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AUIRFN8459<br>OO<br>10<br>D = 0.50<br>1 ASRO<br>0.20<br>0.10<br>0.05<br>Sa = co Mlee<br>0.1<br>0.02<br>eons<br>0.01<br>0.01<br>SINGLE PULSE Notes:<br>Sf ( THERMAL RESPONSE ) ail1/0 1. Duty Factor D = t1/t2<br>2. Peak Tj = P dm x Zthjc + Tc<br>0.001<br>1E-006 1E-005 0.0001 0.001 0.01 0.1<br>cifemth [0A] BN)<br>t1 , Rectangular Pulse Duration (sec)<br>Fig 13.   Maximum Effective Transient Thermal Impedance, Junction-to-Case<br>100<br>Allowed avalanche Current vs avalanche<br>pulsewidth, tav, assuming  Tj = 150°C and<br>Tstart =25°C (Single Pulse)<br>10 <i: | |<br>1<br>al Su tata<br>0.1 Allowed avalanche Current vs avalanche<br>pulsewidth, tav, assuming j = 25°C and<br>an Tstart = 125°C.<br>TH<br>0.01<br>1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01<br>Como 0<br>tav (sec)<br>Fig 14.  Avalanche Current vs. Pulse Width Current<br>70 Notes on Repetitive Avalanche Curves , Figures 14, 15:<br>TOP          Single Pulse                 (For further info, see AN-1005 at www.irf.com)<br>60 BOTTOM   1.0% Duty Cycle 1.Avalanche failures assumption:<br>ID = 40A Purely a thermal phenomenon and failure occurs at a<br>a<br>50 temperature far in excess of Tjmax. This is validated for every<br>SL<br>part type.<br>2. Safe operation in Avalanche is allowed as long asTjmax is not<br>40 PXEN LETTETT    exceeded.<br>3. Equation below based on circuit and waveforms shown in Figures<br>30 PE NINE     22a, 22b.<br>4. PD (ave) = Average power dissipation per single avalanche pulse.<br>20 EE TET 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage<br>NING ETT<br> increase during avalanche).<br>10 ET NNT 6. Iav = Allowable avalanche current.<br>7. T = Allowable rise in junction temperature, not to exceed Tjmax<br>    (assumed as 25°C in Figure 14, 15).<br>0<br>tty LENIN tav = Average time in avalanche.<br>25 50 75 100 125 150 175 D = Duty cycle in avalanche =  tav ·f<br>Starting TJ , Junction Temperature (°C) ZthJC(D, tav) = Transient thermal resistance, see Figures 13) thJC(D, tav) = Transient thermal resistance, see Figures 13) (D, tav) = Transient thermal resistance, see Figures 13) av) = Transient thermal resistance, see Figures 13) ) = Transient thermal resistance, see Figures 13)<br>EAR , Avalanche Energy (mJ)<br>Thermal Response ( Z thJC ) °C/W<br>Avalanche Current (A)<br>**----- End of picture text -----**<br>


- ZthJC(D, tav) = Transient thermal resistance, see Figures 13) thJC(D, tav) = Transient thermal resistance, see Figures 13) (D, tav) = Transient thermal resistance, see Figures 13) av) = Transient thermal resistance, see Figures 13) ) = Transient thermal resistance, see Figures 13) PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC 

   - Iav = 2T/ [1.3·BV·Zth] 

**Fig 15.** Maximum Avalanche Energy vs. Temperature 

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## ~~ik~~ 

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25<br>ID = 40AD = 40A= 40A<br>2015 LaeLaeLae<br>TJ = 125°CJ = 125°C= 125°C<br>10 PNNLNL<br>CEE Cos1 Cos11<br>5 TJ = 25°CJ = 25°C= 25°C<br>eth<br>0<br>4 8 12 16 20<br>VGS, Gate-to-Source Voltage (V)<br>)<br><br>RDS(on),  Drain-to -Source On Resistance ( m<br>**----- End of picture text -----**<br>


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25 4.5<br>ID = 40AD = 40A= 40A<br>4.0 PHT<br>3.5<br>152015 LaeLaeLae al<br>TJ = 125°CJ = 125°C= 125°C 3.0 I D  = 50µA SS<br>10 PNNLNL ID = 250µA | | PRK|<br>CEE Cos1 Cos11 2.5 ID = 1.0mA BaNE NN G<br>ID = 1.0A<br>5 TJ = 25°CJ = 25°C= 25°C<br>2.0<br>eth HEB<br>0<br>1.5 PEL TLELLEW<br>4 8 12 16 20<br>-75 -50 -25 0 25 50 75 100 125 150<br>VGS, Gate-to-Source Voltage (V)<br>TJ , Temperature ( °C )<br>Fig 16.    Typical On-Resistance vs. Gate Voltage  Fig 17.   Threshold Voltage vs. Temperature<br>5 5<br>IF = 26A IF = 40A<br>VR = 34V VR = 34V<br>4 4<br>TJ = 25°C TJ = 25°C<br>TJ = 125°C TJ = 125°C<br>3 3<br>peePa O L=e<br>2 | 2 a=<br>er Eaeaae<br>1 Yi tl 1 Evaneet<br>0 aaa 0 {|<br>0 100 200 300 400 500 600 0 100 200 300 400 500 600<br>diF /dt (A/µs) diF /dt (A/µs)<br>VGS(th) Gate threshold Voltage (V)<br>RDS(on),  Drain-to -Source On Resistance ( m<br>IRRM (A) IRRM (A)<br>**----- End of picture text -----**<br>


**Fig 17.** Threshold Voltage vs. Temperature 

**Fig 16.** Typical On-Resistance vs. Gate Voltage 

**Fig 18.** Typical Recovery Current vs. dif/dt 

**Fig 19.** Typical Stored Charge vs. dif/dt 

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90 90<br>80 IF = 26A T_T 80 IF = 40A TT<br>VR = 34V VR = 34V<br>70 T J  = 25°C 70 T J  = 25°C<br>60 T J = 125°C 60 T J = 125°C<br>50 Se 50 [=<br>40 Hee 40 SEER YR<br>30 OAT TT 30 TTT<br>20 20<br>100 SeTELE 100 CEPTEE<br>0 100 200 300 400 500 600 0 100 200 300 400 500 600<br>diF /dt (A/µs) diF /dt (A/µs)<br>QRR (nC) QRR (nC)<br>**----- End of picture text -----**<br>


**Fig 20.** Typical Recovery Current vs. dif/dt 

**Fig 21.** Typical Stored Charge vs. dif/dt 

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**Fig 22.** Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs 

**Fig 22a.** Unclamped Inductive Test Circuit 

**Fig 22b.** Unclamped Inductive Waveforms 

**Fig 23a.** Switching Time Test Circuit 

**Fig 23b.** Switching Time Waveforms 

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VDD  a<br>**----- End of picture text -----**<br>


**Fig 24a.** Gate Charge Test Circuit 

**Fig 24b.** Gate Charge Waveform 

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## **Dual PQFN 5x6 Package Details** 

For more information on board mounting, including footprint and stencil recommendation, please refer to application note AN-1136: http://www.irf.com/technical-info/appnotes/an-1136.pdf 

For more information on package inspection techniques, please refer to application note AN-1154: 

- - http://www.irf.com/technical info/appnotes/an 1154.pdf 

## **Dual PQFN 5x6 Part Marking** 

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INTERNATIONAL<br>RECTIFIER LOGO<br>\<br>DATE CODE I taR<br>XXXX P ART NUMBER<br>ASSEMBLY ~ (“4 or 5 digits”)<br>SITE CODE XYWWX M ARKING CODE<br>(Per SCOP 200-002) (Per Marking Spec)<br>XXXXX<br>PIN 1 -® \<br>IDENTIFIER<br>LOT CODE<br>(Eng Mode - Min last 4 digits of EATI#)<br>(Prod Mode - 4 digits of SPN code)<br>**----- End of picture text -----**<br>


Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 

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~~TOR~~ 

AUIRFN8459 ~~nn~~ 

## **Qualification Information[† ]** 

|**Qualification Information[† ]**|**Qualification Information[† ]**|||
|---|---|---|---|
|**Qualification Level**||Automotive<br>(per AEC-Q101)||
|||Comments:  This part number(s) passed Automotive qualification.  IR’s In-<br>dustrial and Consumer qualification level is granted by extension of the high-<br>er Automotive level.||
|Moisture SensitivityLevel||Dual PQFN 5mm x 6mm|MSL1|
|**ESD**|Human Body Model|Class H1B(+/- 1000V)††||
|||AEC-Q101-001||
||Charged Device Model|Class C5 (+/- 1000V)††||
|||AEC-Q101-005||
|**RoHS Compliant**||Yes||



- Qualification standards can be found at International Rectifier’s web site:  http//www.irf.com/ 

- ††  Highest passing voltage. 

## **Notes:** 

-  Repetitive rating;  pulse width limited by max. junction temperature. 

-  Limited by TJmax, starting TJ = 25°C, L =75µH, RG = 50, IAS = 40A, VGS = 10V. 

- ISD  50A, di/dt  650A/µs, VDD  V(BR)DSS, TJ  175°C. 

-   Pulse width  400µs; duty cycle 2%. 

-   Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. 

-   Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS. 

-  When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques 

- refer to application note #AN-994: http://www.irf.com/technical-info/appnotes/an-994.pdf 

-  R is measured at TJ of approximately 90°C. 

-  This value determined from sample failure population, starting TJ = 25°C, L= 75µH, RG = 50, IAS = 40A, VGS =10V. 

- Calculated continuous current based on maximum allowable junction temperature.  Bond wire current limit is 50A. Note that current limitations  arising from heating of the device leads may occur with  some lead mounting arrangements 

9 www.irf.com  © 2014 International Rectifier ~~Ol~~ 

Submit Datasheet Feedback July 29, 2014 ~~ee~~ 

~~TGR~~ 

AUIRFN8459 ~~nn~~ 

## **IMPORTANT NOTICE** 

Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. Part numbers designated with the “AU” prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and process change notification. All products are sold subject to IR’s terms and conditions of sale supplied at the time of order acknowledgment. 

IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR’s standard warranty.  Testing and other quality control techniques are used to the extent IR deems necessary to support this warranty. Except where mandated by government requirements, testing of all parameters of each product is not necessarily performed. 

IR assumes no liability for applications assistance or customer product design. Customers are responsible for their products and applications using IR components. To minimize the risks with customer products and applications, customers should provide adequate design and operating safeguards. 

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Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for that product or service voids all express and any implied warranties for the associated IR product or service and is an unfair and deceptive business practice.  IR is not responsible or liable for any such statements. 

IR products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or in other applications intended to support or sustain life, or in any other application in which the failure of the IR product could create a situation where personal injury or death may occur.  Should Buyer purchase or use IR products for any such unintended or unauthorized application, Buyer shall indemnify and hold International Rectifier and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that IR was negligent regarding the design or manufacture of the product. 

Only products certified as military grade by the Defense Logistics Agency (DLA) of the US Department of Defense, are designed and manufactured to meet DLA military specifications required by certain military, aerospace or other applications. Buyers acknowledge and agree that any use of IR products not certified by DLA as military-grade, in applications requiring military grade products, is solely at the Buyer’s own risk and that they are solely responsible for compliance with all legal and regulatory requirements in connection with such use. 

IR products are neither designed nor intended for use in automotive applications or environments unless the specific IR products are designated by IR as compliant with ISO/TS 16949 requirements and bear a part number including the designation “AU”.  Buyers acknowledge and agree that, if they use any non-designated products in automotive applications, IR will not be responsible for any failure to meet such requirements. 

For technical support, please contact IR’s Technical Assistance Center 

http://www.irf.com/technical-info/ 

## **WORLD HEADQUARTERS:** 

101 N. Sepulveda Blvd., El Segundo, California 90245 

Tel: (310) 252-7105 

10 www.irf.com  © 2014 International Rectifier 

Submit Datasheet Feedback July 29, 2014