AUIRFB4610
Power MOSFET, N Channel, 100 V, 73 A, 0.014 ohm, TO-220AB, Through Hole
- Manufacturer: INFINEON
- Product type: Single MOSFETs
- Transistor Polarity:N Channel; Continuous Drain Current Id:73A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.011ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power D
- No. of Pins: 3Pins
- Channel Type: N Channel
- Product Range: -
- Qualification: AEC-Q101
- Power Dissipation: 190W
- Transistor Mounting: Through Hole
- Rds(on) Test Voltage: 10V
- Transistor Case Style: TO-220AB
- Drain Source Voltage Vds: 100V
- Operating Temperature Max: 175°C
- Continuous Drain Current Id: 73A
- Drain Source On State Resistance: 0.014ohm
- Gate Source Threshold Voltage Max: 2V
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.957 € |
| Current stock | 10+ |
| Lead time | 30 days |
**AUTOMOTIVE GRADE** ## ~~Cinfin eon~~ AUIRFB4610 AUIRFS4610 ~~pO~~ HEXFET[® ] Power MOSFET **VDSS 100V RDS(on) typ. 11m** **max. 14m** **ID 73A** ~~=~~ ## **Features** - Advanced Process Technology - Ultra Low On-Resistance - Enhanced dV/dT and dI/dT capability - 175°C Operating Temperature - Fast Switching - Repetitive Avalanche Allowed up to Tjmax - Lead-Free, RoHS Compliant - Automotive Qualified * **==> picture [133 x 84] intentionally omitted <==** **----- Start of picture text -----**<br> D<br>S<br>S G<br>D<br>G<br>TO-220 D [2] Pak<br>AUIRFB4610 AUIRFS4610<br>**----- End of picture text -----**<br> ## **Description** |**Description**<br>Specifically designed for Automotive applications, this HEXFET®<br>Power MOSFET utilizes the latest processing techniques to achieve<br>extremely low on-resistance per silicon area. Additional features of<br>this design are a 175°C junction operating temperature, fast<br>switching speed and improved repetitive avalanche rating . These<br>features combine to make this design an extremely efficient and<br>TO-220<br>AUIRFB4610<br>D[2]Pak<br>AUIRFS4610<br>S<br>G<br>S<br>D<br>G| |---| |reliable device for use in Automotive applications and a wide variety<br>**G**<br>**D**<br>**S**| |of other applications<br>Gate<br>Drain<br>Source| |**Absolute Maximum Ratings**<br>**Base part number**<br>**Package Type**<br>**Standard Pack**<br>**Form**<br>**Quantity**<br>AUIRFB4610<br>TO-220<br>Tube<br>50<br>AUIRFB4610<br>AUIRFS4610<br>D2-Pak<br>Tube<br>50<br>AUIRFS4610<br>Tape and Reel Left<br>800<br>AUIRFS4610TRL<br>**Orderable Part Number**<br>~~a——————~~| |Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress| |ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not| |implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance| |and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless| |otherwise specified.| |otherwise specified.|||| |---|---|---|---| |**Symbol**|**Parameter**|**Max.**|**Units**| |ID@ TC= 25°C|Continuous Drain Current, VGS@ 10V|73|A| |ID @TC= 100°C|Continuous Drain Current,VGS @10V|52|| |IDM|Pulsed Drain Current|290|| |PD@TC= 25°C|Maximum Power Dissipation|190|W| ||Linear Derating Factor|1.3|W/°C| |VGS<br>~~—~~|Gate-to-SourceVoltage<br>~~—~~|± 20<br>~~—~~|V<br>~~—~~| |EAS<br>~~—~~|Single Pulse Avalanche Energy (ThermallyLimited) <br>~~—~~|370<br>~~—~~|mJ<br>~~—~~| |IAR<br>~~—~~|Avalanche Current<br>~~—~~<br>|See Fig.14,15, 22a, 22b<br>~~—~~<br>|A<br>~~—~~<br>~~=~~| |EAR<br>~~—~~|Repetitive Avalanche Energy <br>~~—~~<br>||mJ<br>~~—~~<br>~~=~~| |dv/dt<br>~~—~~|Peak Diode Recovery <br>~~—~~<br>|7.6<br>~~—~~<br>|V/ns<br>~~—~~<br>~~=~~| |TJ<br>TSTG<br>~~—~~<br>~~=~~|Operating Junction and<br>Storage Temperature Range<br>~~—~~<br>~~=~~<br>~~—_——_—_~~|-55 to + 175<br>~~—~~<br>~~=~~<br>~~—_——_—_~~|°C<br>~~—~~<br>~~=~~<br>~~—_——_—_=~~| |~~=~~|SolderingTemperature,for 10 seconds(1.6mm from case)<br>~~=~~<br>~~—_——_—_~~|300<br>~~=~~<br>~~—_——_—_~~|| |~~=~~|Mountingtorque,6-32 or M3 screw<br>~~=~~<br>~~—_——_—_~~|10 lbf•in(1.1N•m)<br> <br>~~=~~<br>~~—_——_—_~~|~~=~~<br>~~—_——_—_=~~| HEXFET® is a registered trademark of Infineon. ***** Qualification standards can be found at www.infineon.com D 1 2015-10-27 ~~Cinfineon~~ AUIRFB/S4610 ~~LLL~~ |~~ae~~||||||| |---|---|---|---|---|---|---| |Qg<br>~~ae~~<br>~~ee~~|Total Gate Charge<br>~~es~~|–––<br>~~es~~|90<br>~~es~~|140<br>~~es~~|nC|ID= 44A<br>VDS= 80V<br>VGS= 10V| |g<br>Qgs<br>~~ae~~<br>~~ee~~|Gate-to-Source Charge<br>~~es~~|–––<br>~~es~~|20<br>~~es~~|–––<br>~~es~~||| |gs<br>Qgd<br>~~ee~~<br>~~ee~~<br>~~ee~~|Gate-to-Drain Charge<br>~~es~~<br>~~ee~~<br>~~es~~|–––<br>~~es~~<br>~~ee~~<br>~~es~~|36<br>~~es~~<br>~~ee~~<br>~~es~~|–––<br>~~es~~<br>~~ee~~<br>~~es~~||| |gd<br>td(on)<br>~~ee~~<br>~~ee~~<br>~~es~~|Turn-On DelayTime<br>~~ee~~<br>~~es~~<br>~~es~~|–––<br>~~ee~~<br>~~es~~<br>~~es~~|18<br>~~ee~~<br>~~es~~<br>~~es~~|–––<br>~~ee~~<br>~~es~~<br>~~es~~|ns|VDD= 65V<br>ID= 44A<br>RG= 5.6<br>VGS= 10V| |d(on)<br>tr<br>~~ee~~<br>~~es~~<br>~~es~~|RiseTime<br>~~es~~<br>~~es~~<br>~~es~~|–––<br>~~es~~<br>~~es~~<br>~~es~~|87<br>~~es~~<br>~~es~~<br>~~es~~|–––<br>~~es~~<br>~~es~~<br>~~es~~||| |td(off)<br>~~es~~<br>~~es~~<br>~~es~~<br>~~es~~|Turn-Off DelayTime<br>~~es~~<br>~~es~~<br>~~ee~~<br>|–––<br>~~es~~<br>~~es~~<br>~~ee~~<br>~~ss~~<br>|53<br>~~es~~<br>~~es~~<br>~~ee~~<br>~~ss~~<br>|–––<br>~~es~~<br>~~es~~<br>~~ee~~<br>||| |d(off)<br>tf<br>~~es~~<br>~~es~~<br>~~es~~|Fall Time<br>~~es~~<br>~~ee~~<br>|–––<br>~~es~~<br>~~ee~~<br>~~ss~~<br>|70<br>~~es~~<br>~~ee~~<br>~~ss~~<br>|–––<br>~~es~~<br>~~ee~~<br>||| |Ciss<br>~~es~~<br>~~es~~<br>~~es~~<br>~~es~~|Input Capacitance<br>~~ee~~<br>~~**e**e~~|–––<br>~~ee~~<br>~~ss~~<br>~~e~~<br>~~Os~~|3550<br>~~ee~~<br>~~ss~~<br>~~e~~|–––<br>~~ee~~<br>~~e~~|pF<br>~~res~~|VGS= 0V<br>VDS= 50V<br>ƒ= 1.0MHz, See Fig. 5| |Coss<br>~~es~~<br>~~es~~<br>~~es~~|Output Capacitance<br>~~**e**e~~<br>~~n~~|–––<br>~~ss~~<br>~~e~~<br>~~n~~<br>~~Os~~|260<br>~~ss~~<br>~~e~~<br>~~n~~|–––<br>~~e~~<br>~~n~~||| |Crss<br><br>~~es~~<br>~~es~~<br>~~es~~|Reverse Transfer Capacitance<br>~~**e**e~~<br>~~n~~|–––<br>~~e~~<br>~~n~~<br>~~Os~~|150<br>~~e~~<br>~~n~~|–––<br>~~e~~<br>~~n~~||| |Coss eff.(ER)<br>~~es~~<br>~~es~~<br>~~ee~~|Effective Output Capacitance (Energy Related)<br>~~rs~~|–––<br>~~Os~~<br>~~rs~~<br>~~rr~~|330<br>~~rs~~<br>~~ts~~|–––<br>~~rs~~<br>~~r~~||VGS= 0V, VDS= 0V to 80V| |Coss eff.(TR)<br>~~es~~<br>~~ee~~|Effective Output Capacitance(Time Related)<br>~~rs~~|–––<br>~~rs~~<br>~~rr~~|380<br>~~rs~~<br>~~ts~~|–––<br>~~rs~~<br>~~r~~||VGS= 0V,VDS= 0V to 80V| |**Diode Characteristics**<br>~~eers~~<br>~~rr ts~~<br>~~res~~<br>~~esrs~~<br>~~SssD~~||||||| |~~es~~|**Parameter **<br>~~rs~~|**Min.**<br>~~rs~~<br>~~Ss~~|**Typ. M**<br>~~rs~~<br>~~Ss~~|**. Max.**<br>~~rs~~<br>~~sD~~|**Units**<br>~~rs~~<br>~~sD~~|**Conditions**<br>~~rs~~| |IS<br>~~es~~<br>~~rf~~|Continuous Source Current<br>(BodyDiode)<br>~~rs~~<br>~~rf~~|–––<br>~~rs~~<br>~~Ss~~<br>~~rf~~|–––<br>~~rs~~<br>~~Ss ~~<br>~~rf~~|73<br>~~rs~~<br> ~~sD~~<br>~~rf~~|A<br>~~rs~~<br>~~sD~~<br>~~rf~~<br>~~ss~~|MOSFET symbol<br>showing the<br>integral reverse<br>p-n junction diode.<br>~~rs~~<br>~~rf~~| |ISM<br>~~rf~~<br>~~es~~|Pulsed Source Current<br>(Body Diode)<br>~~rf~~<br>~~rs~~|–––<br>~~rf~~<br>~~rs~~|–––<br>~~rf~~<br>~~rd~~|290<br>~~rf~~<br>~~ss~~||| |VSD<br>~~es~~|Diode Forward Voltage<br>~~rs~~<br>~~|~~|–––<br>~~rs~~<br>~~|~~|–––<br>~~rd~~<br>~~eee~~<br>|1.3<br>~~ss~~<br>~~ee~~<br>|V<br>~~ss~~<br>~~ee~~|TJ= 25°C,IS= 44A,VGS= 0V| |trr<br>~~es~~<br>~~a es~~|Reverse Recovery Time<br>~~rs ~~<br>~~es~~<br>~~|~~|–––<br> ~~rs ~~<br>~~es~~<br>~~|~~|35<br> ~~rd ~~<br>~~es~~<br>~~eee~~<br>|53<br> ~~ss~~<br>~~es~~<br>~~ee~~<br>|ns<br>~~ss~~<br>~~es~~<br>~~ee~~|TJ =25°CVDD= 85V<br>TJ =125°CIF= 44A,<br>TJ =25°Cdi/dt = 100A/µs<br>TJ =125°C <br>TJ= 25°C<br>| |||–––<br>~~es~~<br>~~|tT~~|42<br>~~es~~<br>~~eee~~<br>~~tT~~|63<br>~~es~~<br>~~ee~~<br>~~tT~~||| |Qrr<br>~~a es~~<br>~~a ee~~<br>~~ee~~|Reverse Recovery Charge<br>~~es~~<br>~~|~~<br>~~ee~~<br>~~|~~<br>|–––<br>~~es~~<br>~~|tT~~<br>~~ee~~|44<br>~~es~~<br>~~eee ~~<br>~~tT~~<br>~~ee~~|66<br>~~es~~<br> ~~ee~~<br>~~tT~~<br>~~ee~~|nC<br>~~es~~<br>~~ee~~<br>~~ee~~<br>|| |||–––<br>~~ee~~<br>~~|TT~~<br>|65<br>~~ee~~<br>~~TT~~<br>|98<br>~~ee~~<br>~~TT~~<br>||| |IRRM<br>~~a ee~~<br>~~ee~~<br>~~ee~~|ReverseRecovery Current<br>~~ee~~<br>~~|~~<br>~~es~~<br>|–––<br>~~ee~~<br>~~|TT~~<br>~~es~~<br>~~es~~<br>|2.1<br>~~ee~~<br>~~TT~~<br>~~es~~<br>~~es~~<br>|–––<br>~~ee~~<br>~~TT~~<br>~~es~~<br>|A<br>~~ee~~<br>~~es~~<br>|| |ton<br>~~ee~~<br>~~ee~~|Forward Turn-On Time<br><br><br>~~es~~|Intrinsic turn-on time is negligible(turn-on is dominated byLS+LD)<br>~~TT~~<br><br>~~es~~<br>~~es~~||||| **Notes:** > Repetitive rating; pulse width limited by max. junction temperature. Limited by TJmax, starting TJ = 25°C, L = 0.39mH, RG = 25, IAS = 44A, VGS =10V. Part not recommended for use above this value. ISD 44A, di/dt 660A/µs, VDD V(BR)DSS, TJ 175°C. Pulse width 400µs; duty cycle 2%. Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS. - When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994 - R is measured at TJ approximately 90°C. 2 2015-10-27 AUIRFB/S4610 ~~LLL~~ ## ~~Cinfin eon~~ **==> picture [210 x 196] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>VGS<br>TOP 15V<br>10V<br>8.0V<br>7.0V<br>6.0V<br>5.5V<br>100 5.0V |<br>BOTTOM 4.5V<br>sf<br>10<br>4.5V<br> 60µs PULSE WIDTH 60µs PULSE WIDTH<br>Tj = 25°C<br>1<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br> **==> picture [513 x 655] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>VGS VGS<br>TOP 15V TOP 15V<br>10V 10V<br>8.0V 8.0V<br>7.0V 7.0V<br>6.0V 6.0V<br>100 5.5V 5.0V | 5.5V 5.0V ;<br>BOTTOM 4.5V BOTTOM 4.5V<br>100<br>sf V4<br>10<br>4.5V<br>4.5V<br> 60µs PULSE WIDTH 60µs PULSE WIDTH 60µs PULSE WIDTH<br>Tj = 25°C Tj = 25°C<br>1 10<br>0.1 1 10 100 0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)<br>Fig. 1 Typical Output Characteristics Fig. 2 Typical Output Characteristics<br>3.0<br>1000.0<br>ID = 73A<br>VGS = 10V<br>2.5<br>100.0<br>EEap== CH,<br>2.0<br>T = 175°C<br>J<br>10.0 aa aun PUREED<br>1.5<br>T = 25°C<br>J<br>1.0 SPE 1.0 DAE<br>VDS = 25V<br> 60µs PULSE WIDTH TTT<br>fh 0.5 ya<br>0.1<br>-60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>2.0 3.0 4.0 5.0 6.0 7.0 8.0<br>TJ , Junction Temperature (°C)<br>VGS, Gate-to-Source Voltage (V)<br>Fig. 3 Typical Transfer Characteristics Fig. 4 Normalized On-Resistance vs. Temperature<br>6000 20<br>VGS = 0V, f = 1 MHZ I = 44A<br>D<br>Ciss = Cgs + Cgd, Cds SHORTED<br>5000 C C rss oss = C = Cds gd + Cgd 16 V VDS= 50V DS= 80V<br>VDS= 20V<br>4000 To 4<br>Ciss<br>ee [a] | 12 Fe<br>3000<br>nlm || aay an<br>8<br>2000<br>II 4 oo” 22'n<br>1000<br>OEE Coss RII [4<br>Crss<br>0 So 0 JTF TLE y<br>1 10 100 0 20 40 60 80 100 120 140<br>VDS, Drain-to-Source Voltage (V) QG Total Gate Charge (nC)<br>ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A)<br>)<br>ID, Drain-to-Source Current<br>VGS, Gate-to-Source Voltage (V)<br>C, Capacitance (pF)<br>RDS(on) , Drain-to-Source On Resistance (Normalized)<br>**----- End of picture text -----**<br> **Fig. 4** Normalized On-Resistance vs. Temperature **Fig 5.** Typical Capacitance vs. Drain-to-Source Voltage **Fig 6.** Typical Gate Charge vs. Gate-to-Source Voltage 3 2015-10-27 AUIRFB/S4610 **==> picture [497 x 197] intentionally omitted <==** **----- Start of picture text -----**<br> 1000.0 1000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br>100.0 TJ = 175°C 100 100µsec<br>10.0 w( a nnea 10 ES<br>1msec<br>TJ = 25°C<br>10 msec<br>1.0 ARLE 1 Ee<br>Tc = 25°C<br>Tj = 175°C<br>VGS = 0V Single Pulse DC<br>0.1 0.1<br>0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 1 10 100 1000<br>fisaRRRAGS PANE<br>VSD, Source-to-Drain Voltage (V) VDS , Drain-toSource Voltage (V)<br>ISD, Reverse Drain Current (A) ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br> **Fig. 7** Typical Source-to-Drain Diode Forward Voltage **==> picture [212 x 428] intentionally omitted <==** **----- Start of picture text -----**<br> 80<br>60 ETT<br>40<br>20 TTPTTT PNYEET<br>rh<br>LETT<br>0<br>25 50 75 100 125 150 175<br>TJ , Junction Temperature (°C)<br>Maximum Drain Current vs. Case Temperature<br>2.0<br>1.5<br>1.0 Poet)<br>0.5<br>EapZe<br>tT | |<br>0.0<br>0 20 40 60 80 100<br>VDS, Drain-to-Source Voltage (V)<br>ID , Drain Current (A)<br>Energy (µJ)<br>**----- End of picture text -----**<br> **Fg 9.** Maximum Drain Current vs. Case Temperature **Fig 8.** Maximum Safe Operating Area **==> picture [211 x 433] intentionally omitted <==** **----- Start of picture text -----**<br> 125<br>120<br>TTT<br>115<br>110 HHHHELLEt<br>105<br>ATT<br>100 HTT<br>-60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>TJ , Junction Temperature (°C)<br>Fig 10. Drain-to-Source Breakdown Voltage<br>1600<br> ID<br>TOP 4.6A<br> 6.3A<br>1200 BOTTOM 44A<br>800 Nt<br>400<br>SNGEEE<br>0 SS<br>25 50 75 100 125 150 175<br>Starting TJ, Junction Temperature (°C)<br>EAS, Single Pulse Avalanche Energy (mJ)<br>V(BR)DSS , Drain-to-Source Breakdown Voltage<br>**----- End of picture text -----**<br> **Fig 10.** Drain-to-Source Breakdown Voltage **Fig 11.** Typical COSS Stored Energy **Fig 12.** Maximum Avalanche Energy vs. Drain Current 2015-10-27 4 ~~Cinfin eon~~ AUIRFB/S4610 ~~LLL~~ **==> picture [423 x 197] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>D = 0.50 TOL<br>0.20<br>0.1 0.10<br>0.05<br>0.01 0.020.01 eT J J 1 1 R1 R 1 2 R 2 2 R 2 C C Ri (°C/W) 0.4367 0.001016 I (sec)<br>Ci= Ci= iRiiRi 0.3337 0.009383<br>0.001 pealTw utaraTHC COOH<br>SINGLE PULSE<br>( THERMAL RESPONSE ) Notes:<br>1. Duty Factor D = t1/t2<br>2. Peak Tj = P dm x Zthjc + Tc<br>0.0001 Tl craAVP<br>1E-006 1E-005 0.0001 0.001 0.01 0.1<br>t1 , Rectangular Pulse Duration (sec)<br>Thermal Response ( Z thJC )<br>**----- End of picture text -----**<br> **Fig 13.** Maximum Effective Transient Thermal Impedance, Junction-to-Case **==> picture [498 x 433] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>Allowed avalanche Current vs avalanche<br>Duty Cycle = Single Pulse pulsewidth, tav, assuming Tj = 150°C and<br>Tstart =25 ° C (Single Pulse)<br>0.01<br>10<br>0.05<br>LAT 0.10 TRAN<br>aE<br>1 aeTey ry SUT<br>Allowed avalanche Current vs avalanche<br>QEis |<br>pulsewidth, tav, assuming j = 25°C and<br>Tstart = 150°C.<br>GmcLiani<br>0.1 TU | A<br>1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01<br>tav (sec)<br>Fig 14. Avalanche Current vs. Pulse width<br>400<br>Notes on Repetitive Avalanche Curves , Figures 14, 15:<br>TOP Single Pulse<br>BOTTOM 1% Duty Cycle (For further info, see AN-1005 at www.infineon.com)<br>ID = 44A 1. Avalanche failures assumption:<br>300 Np Purely a thermal phenomenon and failure occurs at a temperature far in<br>excess of Tjmax. This is validated for every part type.<br>eu<br>2. Safe operation in Avalanche is allowed as long as Tjmaxjmax is not exceeded.<br>3. Equation below based on circuit and waveforms shown in Figures 18a, 18b.<br>200 4. PD (ave) = Average power dissipation per single avalanche pulse.<br>5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase<br>INNUTTT during avalanche).<br>6. Iav = Allowable avalanche current.<br>100<br>7. T = Allowable rise in junction temperature, not to exceedT = Allowable rise in junction temperature, not to exceed = Allowable rise in junction temperature, not to exceedAllowable rise in junction temperature, not to exceed Tjmax jmax (assumed as<br>25°C in Figure 13, 14).<br>HUTS<br>tav = Average time in avalanche.<br>0 LELLLL ESSN. D = Duty cycle in avalanche = tav ·f<br>25 50 75 100 125 150 175 ZthJC(D, tav) = Transient thermal resistance, see Figures 13)<br>Starting TJ , Junction Temperature (°C)<br>EAR , Avalanche Energy (mJ)<br>Avalanche Current (A)<br>**----- End of picture text -----**<br> - Purely a thermal phenomenon and failure occurs at a temperature far in 2. Safe operation in Avalanche is allowed as long as Tjmaxjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 18a, 18b. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 7. T = Allowable rise in junction temperature, not to exceedT = Allowable rise in junction temperature, not to exceed = Allowable rise in junction temperature, not to exceedAllowable rise in junction temperature, not to exceed Tjmax jmax (assumed as 25°C in Figure 13, 14). **PD (ave) = 1/2 ( 1.3·BV·Iav) =** **T/ ZthJC Iav = 2** **T/ [1.3·BV·Zth]** **EAS (AR) = PD (ave)·tav** **Fig 15.** Maximum Avalanche Energy vs. Temperature 5 2015-10-27 ~~oO =~~ AUIRFB/S4610 **==> picture [225 x 208] intentionally omitted <==** **----- Start of picture text -----**<br> 5.0<br>I = 1.0A<br>D<br>I = 1.0mA<br>D<br>ID = 250µAD = 250µA = 250µAµAA<br>4.0<br>ATT ID = 100µA<br>S055<br>3.0<br>SN<br>2.0<br>CUPS)<br>LL LLELES<br>1.0<br>-75 -50 -25 0 25 50 75 100 125 150 175<br>TJ , Temperature ( °C )<br>VGS(th) Gate threshold Voltage (V)<br>**----- End of picture text -----**<br> **==> picture [496 x 434] intentionally omitted <==** **----- Start of picture text -----**<br> 16<br>I = 1.0A<br>D<br>I = 1.0mA<br>D<br>ID = 250µAD = 250µA = 250µAµAA<br>4.0 ATT ID = 100µA 12 ELLE Ler<br>S055 peae<br>3.0 8<br>SN [Leer<br>IF = 29A<br>2.0 4 VR = 85V<br>CUPS) ge TJ = 125°C<br>TJ = 25°C<br>LL LLELES 0 PTL<br>1.0<br>100 200 300 400 500 600 700 800 = 900 1000<br>-75 -50 -25 0 25 50 75 100 125 150 175<br>dif / dt - (A / µs)<br>TJ , Temperature ( °C )<br>Fig 16. Threshold Voltage vs. Temperature<br>Fig. 17 - Typical Recovery Current vs. diff/dt<br>16<br>300<br>12<br>He 200 TTT.<br>8<br>4 ea IF = 44A 100 FT PEEEP IF = 29A<br>VR = 85V<br>a TJ = 125°C LL peer aes VTJR = 125°C = 85V<br>0 PT TJ = 25°C =| 0 anrif TJ = 25°C =<br>100 200 300 400 500 600 700 800 900 1000<br>100 200 300 400 500 600 700 800 900 1000<br>dif / dt - (A / µs)<br>dif / dt - (A / µs)<br>IRRM - (A)<br>IRRM - (A)<br>QRR - (nC)<br>**----- End of picture text -----**<br> **Fig 16.** Threshold Voltage vs. Temperature **Fig. 17** - Typical Recovery Current vs. diff/dt **Fig. 18** - Typical Recovery Current vs. dif/dt **Fig. 19** - Typical Stored Charge vs. dif/dt **==> picture [207 x 196] intentionally omitted <==** **----- Start of picture text -----**<br> 300<br>200100 eT<br>IF = 44A<br>VR = 85V<br>eter TJ = 125°C<br>TJ = 25°C<br>ATL<br>0<br>100 200 300 400 500 600 700 800 900 1000<br>dif / dt - (A / µs)<br>QRR - (nC)<br>**----- End of picture text -----**<br> **Fig. 20** - Typical Stored Charge vs. dif/dt 6 2015-10-27 ~~Cinfir~~ AUIRFB/S4610 ~~a~~ **Fig 21.** Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs **==> picture [175 x 108] intentionally omitted <==** **----- Start of picture text -----**<br> 15V<br>L DRIVER<br>VDS<br>R G D.U.T +<br>- [V][DD]<br>20V JL IAS<br>ae tp Y 0.01<br>**----- End of picture text -----**<br> **Fig 22a.** Unclamped Inductive Test Circuit **==> picture [112 x 26] intentionally omitted <==** **----- Start of picture text -----**<br> V(BR)DSS<br>tp ><br>**----- End of picture text -----**<br> **==> picture [18 x 9] intentionally omitted <==** **----- Start of picture text -----**<br> IAS<br>**----- End of picture text -----**<br> **Fig 22b.** Unclamped Inductive Waveforms **Fig 23a.** Switching Time Test Circuit **Fig 23b.** Switching Time Waveforms **==> picture [188 x 128] intentionally omitted <==** **----- Start of picture text -----**<br> Id<br>Vds :<br>Vgs<br>'i<br>!<br>'|<br>Vgs(th) !t<br>!t<br>Qgs1 Qgs2 Qgd Qgodr<br>**----- End of picture text -----**<br> **Fig 24a.** Gate Charge Test Circuit **Fig 24b.** Gate Charge Waveform 2015-10-27 7 ## ~~Cinfin eon~~ ## AUIRFB/S4610 ~~LLL~~ **TO-220AB Package Outline** (Dimensions are shown in millimeters (inches)) **TO-220AB Part Marking Information** **==> picture [331 x 148] intentionally omitted <==** **----- Start of picture text -----**<br> Part Number AUIRFB4610<br>Date Code<br>IR Logo T é4R YWWA Y= Year<br>WW= Work Week<br><br>XX XX<br>[|<br>Lot Code<br>**----- End of picture text -----**<br> Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 8 2015-10-27 AUIRFB/S4610 ~~LLL~~ ## ~~Cinfin eon~~ **D[2] Pak (TO-263AB) Package Outline** (Dimensions are shown in millimeters (inches)) ## **D[2] Pak (TO-263AB) Part Marking Information** **==> picture [331 x 148] intentionally omitted <==** **----- Start of picture text -----**<br> Part Number AUIRFS4610<br>Date Code<br>IR Logo T é4R YWWA Y= Year<br>WW= Work Week<br><br>XX XX<br>[|<br>Lot Code<br>**----- End of picture text -----**<br> Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 9 2015-10-27 AUIRFB/S4610 ~~LLL~~ ## ~~Cinfineon~~ ## **D[2] Pak (TO-263AB) Tape & Reel Information** (Dimensions are shown in millimeters (inches)) **==> picture [386 x 164] intentionally omitted <==** **----- Start of picture text -----**<br> TRR<br>1.60 (.063)<br>1.50 (.059)<br>1.60 (.063)<br>4.10 (.161)<br>3.90 (.153) 1.50 (.059) 0.368 (.0145)<br>0.342 (.0135)<br>FEED DIRECTION 1.85 (.073) 11.60 (.457)<br>1.65 (.065) 11.40 (.449) 24.30 (.957)<br>15.42 (.609)<br>23.90 (.941)<br>15.22 (.601)<br>TRL<br>1.75 (.069)<br>10.90 (.429) 1.25 (.049)<br>10.70 (.421) 4.72 (.136)<br>16.10 (.634) 4.52 (.178)<br>15.90 (.626)<br>**----- End of picture text -----**<br> **==> picture [71 x 7] intentionally omitted <==** **----- Start of picture text -----**<br> FEED DIRECTION<br>**----- End of picture text -----**<br> **==> picture [376 x 188] intentionally omitted <==** **----- Start of picture text -----**<br> 13.50 (.532) 27.40 (1.079)<br>12.80 (.504) 23.90 (.941)<br>4<br>330.00 60.00 (2.362)<br>(14.173) MIN.<br> MAX.<br>30.40 (1.197)<br>NOTES : MAX.<br>1. COMFORMS TO EIA-418.<br>26.40 (1.039) 4<br>2. CONTROLLING DIMENSION: MILLIMETER. 24.40 (.961)<br>3. DIMENSION MEASURED @ HUB. 3<br>**----- End of picture text -----**<br> 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 10 2015-10-27 ~~ie~~ AUIRFB/S4610 ~~&»«=«=»™§F5F eed~~ ## **Qualification Information** |**Qualification Information**|**Qualification Information**||| |---|---|---|---| |**Qualification Level**||Automotive<br>(per AEC-Q101)|| |||Comments: This part number(s) passed Automotive qualification. Infineon’s<br>Industrial and Consumer qualification level is granted by extension of the higher<br>Automotive level.|| |**Moisture Sensitivity Level**||D2-Pak|MSL1| |||TO-220 Pak|N/A| |**ESD**|Machine Model|Class M4 (+/- 400V)† <br>AEC-Q101-002|| ||Human Body Model|Class H1C (+/- 2000V)† <br>AEC-Q101-001|| ||Charged Device Model|Class C3 (+/- 750V)† <br>AEC-Q101-005|| |**RoHS Compliant**||Yes|| - Highest passing voltage. ## **Revision History** **Date Comments** Updated datasheet with corporate template 10/27/2015 Corrected ordering table on page 1. **Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2015 All Rights Reserved.** ## **IMPORTANT NOTICE** The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office (www.infineon.com). ## **WARNINGS** Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not ~~_~~ be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 11 2015-10-27
Updated at March 10, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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