AUIRF9Z34N

## **AUTOMOTIVE GRADE** 

## **Features** 

Advanced Planar Technology P-Channel MOSFET Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified* 

## **Description** 

Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications. 

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D V -55V<br>(BR)DSS<br>R    max. 0.10 Ω<br>G DS(on)<br>S ID -19A<br>**----- End of picture text -----**<br>


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D<br>S<br>D<br>G<br>TO-220AB<br>AUIRF9Z34N<br>G D S<br>Gate Drain Source<br>**----- End of picture text -----**<br>


## **Absolute Maximum Ratings** 

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.   These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified. 

|~~———~~|**Parameter**<br>~~———~~|**Max.**|**Units**|
|---|---|---|---|
|ID@ TC= 25°C<br>~~———~~|Continuous Drain Current, VGS@ 10V<br>~~a~~<br>~~———~~|-19<br>~~a~~|A|
|ID@ TC= 100°C <br>~~———~~|Continuous Drain Current, VGS@ 10V<br>~~a~~<br>~~———~~|-14<br>~~a~~||
|IDM<br>~~———~~|Pulsed Drain Current<br>~~———~~|-68||
|PD@TC= 25°C<br>~~———~~|Power Dissipation<br>~~———~~<br>~~a~~|68<br>~~a~~|W<br>~~a~~|
||Linear Derating Factor<br>~~a~~<br>~~I~~|0.45<br>~~a~~<br>~~I~~|W/°C<br>~~a~~<br>~~I~~|
|VGS|Linear Derating Factor<br>Gate-to-Source Voltage<br>~~a~~|± 20<br>~~a~~|V<br>~~a~~|
|EAS<br>~~a~~|Single Pulse Avalanche Energy (ThermallyLimited)<br>~~a~~<br>~~a~~|180<br>~~a~~<br>|mJ<br>~~a~~<br>|
|IAR<br>~~a~~|Avalanche Current<br>~~a~~<br>~~a~~|-10<br>~~a~~<br>|A<br>~~a~~<br>|
|EAR<br>~~a~~|Repetitive Avalanche Energy<br>~~a©~~|6.8<br>~~©~~|mJ<br>~~©~~|
|dv/dt<br>|Peak Diode Recovery dv/dt<br>~~©~~<br>~~©~~<br>~~ee~~|-5.0<br>~~©~~<br>~~©~~<br>~~eee~~|V/ns<br>~~©~~<br>~~©~~<br>~~eee~~|
|TJ<br>TSTG|Peak Diode Recovery dv/dt<br>Operating Junction and<br>Storage Temperature Range<br>~~ee~~|-55  to + 175<br>~~eee~~|°C<br>~~eee~~|
|~~a~~|Soldering Temperature, for 10 seconds (1.6mm from case )<br>~~ee~~<br>~~a~~|300<br>~~eee~~||
|~~a~~|Soldering Temperature, for 10 seconds (1.6mm from case )<br>Mounting Torque, 6-32 or M3 screw<br>~~ee ~~<br>~~a~~|10 lbf in (1.1N m)<br> ~~eee~~|~~eee~~|



HEXFET[®] is a registered trademark of International Rectifier. 

***** Qualification standards can be found at http://www.irf.com/ 

www.irf.com 

1 

**Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

||**Parameter**|**Min.**|**Typ.**|**Max. **|**Units**|**Conditions**|
|---|---|---|---|---|---|---|
|Qg|Total Gate Charge<br>~~a~~<br>~~a~~|–––<br>~~a~~<br>~~ee~~|–––<br>~~a~~|35<br>~~a~~|nC|ID= -10A<br>VDS= -44V<br>VGS= -10V, See Fig. 6 & 13<br>~~@~~|
|Qgs|Gate-to-Source Charge<br>~~ee~~<br>~~a~~|–––<br>~~ee~~<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~|79<br>~~ee~~|||
|Qgd|Gate-to-Drain("Miller")Charge<br>~~a~~|–––<br>~~ee~~<br>~~ee~~<br>~~ee~~|–––|16|||
|td(on)|Turn-On DelayTime<br>~~a~~|–––<br>~~ee~~<br>~~a~~<br>~~ee~~<br>~~ee~~|13<br>~~a~~|–––<br>~~a~~|ns|VDD= -28V<br>ID= -10A<br>RG= 13Ω<br>RD= 2.6Ω,See Fig. 10<br>~~@~~<br>~~®~~|
|tr|Rise Time<br>~~a~~<br>~~a~~|–––<br>~~ee~~<br>~~a~~<br>~~ee~~<br>~~ee~~|55<br>~~a~~|–––<br>~~a~~|||
|td(off)|Turn-Off DelayTime<br>~~a~~<br>~~a~~|–––<br>~~ee~~<br>~~a~~<br>~~ee~~|30<br>~~a~~|–––<br>~~a~~|||
|tf|Fall Time<br>~~a~~|–––<br>~~ee~~|41|–––|||
|LD|Internal Drain Inductance|–––|4.5|–––|nH|S<br>D<br>G<br>Between lead,<br>6mm (0.25in.)<br>from package<br>and center of die contact|
|LS|Internal Source Inductance|–––|7.5|–––|||
|Ciss|Input Capacitance<br>~~ee~~|–––<br>~~ee~~|620<br>~~ee~~|–––<br>~~ee~~|pF|VDS= -25V<br>ƒ= 1.0MHz, See Fig. 5<br>VGS= 0V|
|Coss|Output Capacitance<br>~~a~~|–––<br>~~a~~|280<br>~~a~~|–––<br>~~a~~|||
|Crss|Reverse Transfer Capacitance<br>~~es~~|–––<br>~~es~~|140<br>~~es~~|–––<br>~~es~~|||
|**Diode Characteristics**<br>~~es~~||~~es~~|||||
|~~PT~~|**Parameter**<br>~~PT~~|**Min.**<br>~~PT~~|**Typ.**<br>~~PT~~|**Max. **<br>~~PT~~|**Units**<br>~~PT~~|**Conditions**<br>~~PT~~|
|IS<br>~~PT~~|Continuous Source Current<br>(Body Diode)<br>~~PT~~|–––<br>~~PT~~|–––<br>~~PT~~|-19<br>~~PT~~|A<br>~~PT~~|S<br>D<br>G<br>MOSFET symbol<br>showing  the<br>integral reverse<br>p-n junction diode.<br>~~PT~~|
|ISM|(Body Diode)<br>Pulsed Source Current<br>(Body Diode)|–––|–––|-68|||
|VSD|(Body Diode)<br>Diode Forward Voltage<br>~~po~~<br>~~es~~|–––<br>~~po~~<br>~~os~~|–––<br>~~po~~<br>~~os~~|-1.6<br>~~po~~<br>~~en is~~|V<br>~~po~~<br>~~is Oe~~|TJ= 25°C, IS= -10A, VGS= 0V<br>pn junction diode.<br>~~po~~<br>~~Oea~~|
|trr|Reverse RecoveryTime<br>~~eT~~<br>~~es~~|–––<br>~~eT~~<br>~~os~~|54<br>~~eT~~<br>~~os~~|82<br>~~eT~~<br>~~en is~~|ns<br>~~eT~~<br>~~is Oe~~|TJ= 25°C, IF= -10A<br>di/dt = 100A/μs<br>~~eT~~<br>~~Oea~~<br>®|
|Qrr|Reverse RecoveryCharge<br>~~eT~~<br>~~es~~|–––<br>~~eT~~<br>~~os~~|110<br>~~eT~~<br>~~os~~|160<br>~~eT~~<br>~~en is~~|nC<br>~~eT~~<br>~~is Oe~~||
|ton|Forward Turn-On Time<br>~~eT~~<br>~~es~~<br>~~a~~|Intrinsic turn-on time is negligible(turn-on is dominated byLS+LD)<br>~~eT~~<br>~~os en is Oea~~|||||



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> R θ is measured at TJ approximately 90°C. 

## **Qualification Information[†]** 

|**Qualification Information[†]**|**Qualification Information[†]**|||
|---|---|---|---|
|**Qualification Level**||Automotive<br>(per AEC-Q101) ††||
|||Comments: This part number(s) passed Automotive qualification.<br>IR’s Industrial and Consumer qualification level is granted by<br>extension of the higher Automotive level.||
|**Moisture Sensitivity Level**||TO-220|N/A|
|**ESD**|Machine Model|Class M3 (+/- 250V)†††<br>AEC-Q101-002||
||Human Body Model|Class H1B (+/- 800V)†††<br>AEC-Q101-001||
||Charged Device<br>Model|Class C5 (+/- 2000V)†††<br>AEC-Q101-005||
|**RoHS Compliant**||Yes||



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100 100<br> TOP          - 15V eo  TOP          - 15V eT<br>                  - 10V                  - 8.0V                  - 7.0V tdHAAoT                   - 10V                  - 8.0V                  - 7.0V td0 ona)a<br>- 6.0V - 6.0V<br>                  - 5.5V                   - 5.5V<br>- 5.0V - 5.0V<br> BOTTOM  - 4.5V  BOTTOM  - 4.5V<br>a a ae:<br>Ne | 6x |<br>10 7c) 10 LN ZlAt |III<br>Ye ee ///2<br>a 0) a er eG)<br>eya [1/7] | ae en)/////77 ae el<br>| YY///7Gpy S/nPn //, 7A -4.5V eee<br> -4.5V<br>yy} | YG<br> 20μs PULSE WIDTH<br>1  T   = 25°Cc A 1  T   = 175°CC<br>0.1 edie 1 10 100 eV 0.1 // 1 10 100<br>-V     , Drain-to-Source Voltage (V)DS -V     , Drain-to-Source Voltage (V)DS<br>D D<br>-I   , Drain-to-Source Current (A) -I   , Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


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100 oeRSSapeeeOeee oe<br>SSeS Seas ==<br>T  = 25°CJ<br>| | ae<br>T  = 175°CJ<br>10 Bane /4eeeeee<br>Gane 2zeeenee<br>yeSee 4<br>ee 7 2 ee ee ee<br>of| fy ft<br>At} | ff<br> V     = -25VDS<br>1 L<br>| | | auerrse mons<br>4 5 6 7 8 9 10<br>-V     , Gate-to-Source Voltage (V)GS<br>D<br>-I   , Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


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2.01.5 PEPPEEL fl =-17A  ELE LEAT We<br>L ail<br>CET Ae<br>1.0 BARI NA A >> 2400 SRERUERELD<br>al<br>A]LT |<br>> aa<br>0.5 TIT<br>TEE EEE<br>0.0 SEEREEE EET<br>PEE  EE EE how<br>-60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>T   , Junction Temperature (°C)J<br>(Normalized)<br>DS(on)<br>R           ,  Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>


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1200 20<br>V      = 0V,         f = 1MHzGS  I    = -10AD<br>|| C      = C     + C     ,   C     SHORTEDiss         gs         gd         ds Po<br>1000 =n C      = CC      = C     + Crss         gdoss        ds         gd 16 ee  V      = -28VDS<br>—(— eo PT yi |<br>800 s<br>NS 12 a<br>NN ll ff<br>600 ss<br>oer}\Q "| EYE<br>8<br>400<br>NNN ee 74<br>ss<br>4<br>200 Se ST pS<br>Sen ee—<br>    SEE FIGURE 13<br>0 PE A 0 [| | romtrorcom<br>1 10 100 0 10 20 30 40<br>-V     , Drain-to-Source Voltage (V)DS Q   , Total Gate Charge (nC)G<br>C, Capacitance (pF)<br>GS<br>-V     , Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


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100<br>10<br>Ae<br>T  = 175°CJ<br>T  = 25°CJ<br>nee ee ee<br>1<br>tft | | |<br>ees oy Ce ey ee<br>PSR<br>=F Ep<br>0.1 PAE PP A Leow<br>0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6<br>-V     , Source-to-Drain Voltage (V)SD<br>SD<br>-I     , Reverse Drain Current (A)<br>**----- End of picture text -----**<br>


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1000<br> OPERATION IN THIS AREA LIMITED<br>                       BY RDS(on)<br>100<br>10μs<br>fae aSSS 100μs<br>10<br>eI OT<br>[soo<br>1ms<br>fF N<br>10ms<br>1 BBE  Single Pulse elop<br>1 10 100<br>-V     , Drain-to-Source Voltage (V)DS<br>D<br>-I   , Drain Current (A)<br>**----- End of picture text -----**<br>


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20 SAE EEE ve |<br>MS D.U.T.<br>-<br>15 PE PNET [ELE] EEE a l +<br>PPT [TENN] aN<br>eS F<br>PEt NQ -10V ≤ 1<br>10<br>≤ 0.1 %<br>PETIT EEE ae<br>5 Py TY TEEETL LLINTN | Fig 10a.=Switching Time Test<br>td(on) tr td(off) tf<br>025 Pit 50 ETT 75 Tee 100 125 150 175 VGS \ i T T > | 1 ial<br>T   , Case TemperatureC (  C)° 10%<br>|<br>90%<br>VDS<br>I   , Drain Current (A)D<br>**----- End of picture text -----**<br>


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 10<br>po<br>NNa BO Oe Oe Qe Oe<br>D = 0.50<br> 1 ee<br>_ e ater ee Snail<br>0.20<br>eens e —— _oal ee ee) eee eel<br>0.10<br>SS ee sn<br>0.05 PDM<br>0.1 0.02 SINGLE PULSE<br>C 0.01 Pereee (THERMAL RESPONSE) TY t1<br>t2<br>pT EE<br>Notes:<br>1. Duty factor D = t   / t 1 2<br>Ere oi 2. Peak T J = P DM x  Z thJC + TC<br>0.01<br>0.00001 0.0001 0.001 0.01 0.1<br>t  , Rectangular Pulse Duration (sec)1<br>thJC<br>(Z        )<br>Thermal Response<br>**----- End of picture text -----**<br>


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VDS L<br>R ; G D.U.T L. VDD<br>IAS<br>. -20V a DRIVER<br>tp 0.01 Ω<br>15V<br>**----- End of picture text -----**<br>


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500<br>                    ID<br>TOP            -4.2A<br>                   -7.2A<br>400 Nooo BOTTOM    -10A<br>KURaaEe<br>PN<br>300 tt<br>PON<br>200<br>NIN pt<br>RON<br>100<br>| WAN Pf<br>Baa SSNNGEEE<br>| | | UP  SS<br>0<br>25 50 75 100 125 150 175<br>Starting T  , Junction Temperature (°C)J<br>AS<br>E     ,   Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


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IAS<br>\ |<br>\ |<br>\<br>¢— tp<br>V(BR)DSS<br>**----- End of picture text -----**<br>


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Current Regulator<br>Same Type as D.U.T.<br>50K Ω<br>QG 12V .2 μ F<br>.3 μ F<br>i ley<br>QGS QGD D.U.T. +-VDS<br>VGS<br>VG<br>-3mA<br>, oS an |<br>C ia<br>IG ID<br>Charge Current Sampling Resistors<br>**----- End of picture text -----**<br>


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™ +    •  Low Stray Inductance<br>® •  Ground Plane<br> •   Low Leakage Inductance<br>Current Transformer<br>-<br>+<br>@ | S,<br>- - +<br>8 °<br>00<br>+<br>Re •  •   dv/dt controlled by Rg -<br>•   D.U.T. - Device Under Test<br>(1) Isp controlled by Duty Factor "D"<br>* Reverse Polarity of D.U.T for P-Channel<br>® Driver Gate Drive<br>P.W.<br>Period D =<br>P.W. n d Period _t<br>GS<br>t<br>@ D.U.T. ISD Waveform<br>Reverse<br>Recovery Body Diode Forward<br>Current i Current di/dt fs<br>©) D.U.T. VDS Waveform<br>Diode Recoverydv/dt \<br>/i<br>Re-Applied<br>Voltage Body Diode  Forward Drop<br>® Inductor Curent<br>e e ee<br>Ripple  ≤ 5% ISD<br>**----- End of picture text -----**<br>


## Internationa TER Rectifier Dimensions are shown in millimeters (inches) 

## AUIRF9Z34N 

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NOT ES :<br>1 DIM E NSIONING A ND TOL E R A NCING P E R A SM E Y14.5 M - 1994,<br>a 2 DI ME NSIONS A R E S H OWN IN IN CHE S [ MILLIM E T E RS ].<br>(8) 3 L EA D DIM E NSION A ND FIN IS H UNCONTROLL E D IN Lt.<br>A a SE A T IN G 4 D IME NSION D & E DO NOT I NC LU DE M OLD F LA SH. M OL D FLASH HEAD_ ASSIGN MENTS<br>rreg ‘oP a Aa PL eaAlNE /\ SMDHAIM EALESN LURSINOT E ODN ATbEXCEEDt THE& ctO U . A0TE 05PPRMO”LY( S0 TO .T 127) EXT B A S RPEEE MRM EETASSID OFLE, ONTHETHELY.SEPLASTICDIMENSIONSBODY. ARE Htb EXeex ue Ee ETer<br>a @ y A 6 C ONTROLLING DIM EN SION : I NCH ES , S o sourc e<br>4 1% by HI 7 T HE RM A L P A D CONTOUR OPTION A L WITHIN DI MEN SIONS £,H 1,02 & Ef<br>cI WY B 8 DIM E NSION E 2 X H 1 D EF IN E A Z ON E W HERE ST A MPING IGBTs, CoPACK<br>eA ] Z Z AND SINGULATION IRREGULARITIES ARE ALLOWED. 3 1.- EG ATMI E T TE R<br> | —] DETAL 8 2. COL LECTOR<br>W N SYMBOL wm-<br>\ por e s |<br>tT i A 3.56 4.82 140 .190<br>L A l 0.51 1,40 020 055<br>A 2 2.04 2.92 .080 15<br>b 0.38 1.01 .015 .040<br>b1 0.38 0.96 6015, 038 5<br>x c_ |+ SaHEET 2 b2b3 1,151,15 1,771,73 045045 070068<br>a 2 ¢ 0.36 0.61 014 024<br>el 0.36 0.56 014 022 5<br>D 14.22 16,51 560 650 4<br>01 8,38 9.02 330 355,<br>r®° THE RM A L PAD: aN 4 02 eE 1 12.198.389.66 12.8810.668.89 480380330 507420350 4777<br>w Ly | \h HIel 5.85 6.55, 230 .270 7,8<br>Lf 02 A we ll 5x 82 ulL 12 .7- 0 14.736.35 5 0- 0 250580 3<br>° ame oP 3.54 4.08 139 161<br>Q 2.54 3.42 100 135<br>6<br>aA po e o o p s Me<br>came ty<br>vo Aes<br>Part Number AUIRF9Z34N<br>| Date Code<br>IRLogo Fray Y= Year<br>4 YWWA WW= Work Week<br>A= Automotive, Lead Free<br>Lot Code<br>**----- End of picture text -----**<br>


## Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 

## **Ordering Information** 

|**Base part**<br>**number**|**Package Type**|**Standard Pack**|**Standard Pack**|**Complete Part Number**|
|---|---|---|---|---|
|||**Form**|**Quantity**||
|AUIRF9Z34N|TO-220|Tube|**Quantity**<br>50|AUIRF9Z34N|



Inlernational TER Rectifier 

AUIRF9Z34N 

## IMPORTANT NOTICE 

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