AUIRF8739L2TR

~~T@R Rectitier~~ 

AUIRF8739L2TR ~~pe~~ 

**AUTOMOTIVE GRADE** 

Automotive DirectFET[®] Power MOSFET  

||Automotive DirectFET|Automotive DirectFET|Automotive DirectFET|Automotive DirectFET|Automotive DirectFET|Automotive DirectFET|Automotive DirectFET|Automotive DirectFET|Automotive DirectFET|Automotive DirectFET[®]Power MOSFET |Automotive DirectFET[®]Power MOSFET |
|---|---|---|---|---|---|---|---|---|---|---|---|
|<br>Advanced Process Technology|**V(BR)DSS**|||||||||**40V**||
|<br>Optimized for Automotive Motor Drive, DC-DC and<br>other Heavy Load Applications<br><br>Exceptionally Small Footprint and Low Profile|**RDS(on)   typ.**<br> **max.**<br>Optimized for Automotive Motor Drive, DC-DC and|||||||||**0.35m**<br>**0.6m**||
|<br>High Power Density|**ID **(Silicon Limited)|||||||||**545A**||
|<br>Low Parasitic Parameters<br><br>Dual Sided Cooling<br><br>175°C Operating Temperature<br><br>Repetitive Avalanche Allowed up to Tjmax<br><br>Lead Free, RoHS Compliant and Halogen Free|**Qg**<br>S<br>S|||S<br>S||||||**375nC**||
|<br>Automotive Qualified *|D<br>G<br>S|||S|||D|||||
||S|||S||||||||
|||||||||||||
|L8<br>Applicable DirectFET®Outline and  Substrate Outline||||||||||DirectFET2 L-can||
|**SB **<br>**SC**<br>**M2**<br>**M4**<br>**L4**<br>**L6**<br>**L8**<br>**Description**<br>~~[TT~~<br>~~—Eeeeeee~~||||||||||||
|The AUIRF8739L2 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging||||The AUIRF8739L2 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging|||The AUIRF8739L2 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging|||||
|technology to achieve exceptional performance in a package that has the footprint of an SO-8 or 5X6mm PQFN and only 0.7mm profile.|||||technology to achieve exceptional performance in a package that has the footprint of an SO-8 or 5X6mm PQFN and only 0.7mm profile.|||||technology to achieve exceptional performance in a package that has the footprint of an SO-8 or 5X6mm PQFN and only 0.7mm profile.The||
|DirectFET®package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or|||package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or|||||||||
|convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET||convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET®||||||||||
|package allows dual sided cooling to maximize thermal transfer in automotive power systems.||||||||||||



This HEXFET® Power MOSFET is designed for applications where efficiency and power density are of value. The advanced DirectFET® packaging platform coupled with the latest silicon technology allows the AUIRF8739L2 to offer substantial system level savings and performance improvement specifically in motor drive, DC-DC and other heavy load applications on ICE, HEV and EV platforms. This MOSFET utilizes the latest processing techniques to achieve ultra low on-resistance per silicon area. Additional features of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for high current automotive applications. 

|**Base Part Number**|**Package Type**|**Standard Pack**|**Standard Pack**|**Orderable Part Number**|
|---|---|---|---|---|
|||**Form**|**Quantity**||
|AUIRF8739L2|DirectFET®|Tape and Reel|4000|AUIRF8739L2TR|



## **Absolute Maximum Ratings** 

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.   These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolutemaximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified. 

|~~es~~||||
|---|---|---|---|
|~~es~~<br>~~es~~|**Parameter**<br>~~a~~|**Max.**<br>~~a~~|**Units**|
|VGS<br>~~es~~<br>~~es~~|Gate-to-Source Voltage<br>~~a~~|40<br>~~a~~|V|
|ID @TC= 25°C<br>~~es~~<br>~~P|~~|Continuous Drain Current,VGS @10V<br>~~a~~|545<br>~~a~~|A<br>~~7~~|
|ID @TC= 100°C<br>~~es~~<br>~~P|~~|Continuous Drain Current,VGS @10V<br>~~a~~|385<br>~~a~~||
|ID @TA= 25°C<br>~~P|~~<br>~~asa~~|Continuous Drain Current,VGS @10V<br>~~a~~|57||
|ID @TC= 25°C<br>~~P|~~<br>~~asa~~|Continuous Drain Current,VGS @10V(Package limit)<br>~~a~~|375||
|IDM<br>~~P|~~<br>~~asa~~<br>~~es~~<br>~~**e**e~~|Pulsed Drain Current<br>~~a~~<br>|1150||
|PD @TC= 25°C<br>~~P|~~<br>~~asa~~<br>~~es~~<br>~~**e**e~~|Power Dissipation<br>~~a~~<br>|340|W<br>mJ<br>~~7~~<br>~~een~~|
|PD @TA= 25°C<br>~~es~~<br>~~**e**esa~~|Power Dissipation<br>~~a~~|3.8||
|EAS<br>~~**e**esa~~|Single Pulse Avalanche Energy (ThermallyLimited) <br>~~a~~|312||
|EAS(Tested)<br>~~**e**esa~~<br>~~P|~~<br>~~ee~~|Single Pulse Avalanche Energy<br>~~a~~<br>~~ee~~|1500**<br>~~een~~||
|IAR<br>~~**e**esa~~<br>~~P|~~<br>~~ee~~|Avalanche Current<br>~~a~~<br>~~ee~~|See Fig. 14, 15, 22a, 22b<br>~~een~~|A<br>~~een~~|
|EAR<br>~~ee~~|Repetitive Avalanche Energy <br>~~ee~~||~~een~~|
|TP<br>~~ee~~|Peak SolderingTemperature<br>~~ee~~|270<br>~~een~~<br>~~ee~~|mJ<br>~~een~~|
|TJ<br>TSTG<br>~~a ~~|Operating Junction and<br>Storage Temperature Range<br> ~~ee~~|-55  to + 175<br>~~ee~~<br>~~ee~~|°C<br>~~ee~~|



***** Qualification standards can be found at http://www.irf.com/ 

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## **Thermal Resistance** 

|**Thermal Resistance**|||||
|---|---|---|---|---|
|**Symbol**|**Parameter**|**Typ. **|**Max.**|**Units**|
|RJA|Junction-to-Ambient|–––|40|°C/W|
|RJA|Junction-to-Ambient|12.5|–––||
|RJA|Junction-to-Ambient|20|–––||
|RJ-Can|Junction-to-Can|–––|0.44||
|RJ-PCB|Junction-to-PCB Mounted|–––|0.5||
||Linear DeratingFactor|2.3||W/°C|



**Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

|**Symbol**<br>**Parameter**<br>**Min.**<br>**Typ. Max. Units**<br>**Conditions**<br>~~GO~~|
|---|
|V(BR)DSS<br>Drain-to-Source Breakdown Voltage<br>40<br>–––<br>–––<br>V<br>VGS= 0V, ID= 250µA<br>~~CG~~|
|V(BR)DSS/TJ<br>Breakdown Voltage Temp. Coefficient<br>–––<br>0.03<br>–––<br>V/°C Reference to 25°C, ID= 5.0mA<br>~~GO~~|
|RDS(on) <br>Static Drain-to-Source On-Resistance<br>–––<br>0.35<br>0.60<br>m VGS= 10V, ID= 195A|
|VGS(th)<br>Gate Threshold Voltage<br>2.2<br>–––<br>3.9<br>V<br>VDS= VGS, ID= 250µA<br>~~a~~|
|VGS(th)/TJ<br>Gate Threshold Voltage Coefficient<br>–––<br>-12<br>––– mV/°C<br>~~a~~|
|gfs<br>Forward Transconductance<br>250<br>–––<br>–––<br>S<br>VDS= 10V, ID= 195A<br>~~OO~~|
|RG<br>Internal Gate Resistance<br>–––<br>0.81<br>–––<br><br>IDSS<br>Drain-to-Source Leakage Current<br>–––<br>–––<br>1.0<br>µA<br>VDS= 40V, VGS= 0V<br>–––<br>–––<br>150<br>VDS= 40V, VGS= 0V, TJ= 125°C<br>IGSS<br>Gate-to-Source Forward Leakage<br>–––<br>–––<br>100<br>nA<br>VGS= 20V<br>Gate-to-Source Reverse Leakage<br>–––<br>–––<br>-100<br>VGS= -20V<br>**Dynamic Electrical Characteristics@ TJ = 25°C(unless otherwise specified) **<br>~~CG~~<br>~~a a~~<br>~~ee ee eee~~<br>~~Ce eee~~<br>~~ee ene ee~~|
|**Symbol**<br>**Parameter**<br>**Min.**<br>**Typ. Max. Units**<br>**Conditions**<br>Qg<br>Total Gate Charge<br>–––<br>375<br>562<br>VDS= 20V<br>Qgs1<br>Gate-to-Source Charge<br>–––<br>60<br>–––<br>VGS= 10V<br>Qgs2<br>Gate-to-Source Charge<br>–––<br>40<br>–––<br>nC<br>ID= 195A<br>Qgd<br>Gate-to-Drain("Miller")Charge<br>–––<br>120<br>–––<br>Qgodr<br>Gate Charge Overdrive<br>–––<br>155<br>–––<br>~~esCO~~<br>~~a~~<br>~~es~~<br>~~es~~<br>~~es~~|
|Qsw<br>Switch Charge(Qgs2+ Qgd)<br>–––<br>160<br>–––<br>Qoss<br>Output Charge<br>–––<br>151<br>–––<br>nC<br>VDS= 32V, VGS= 0V<br>td(on)<br>Turn-On DelayTime<br>–––<br>34<br>–––<br>ns<br>VDD= 20V, VGS= 10V<br>tr<br>Rise Time<br>–––<br>117<br>–––<br>ID= 195A<br>td(off)<br>Turn-Off DelayTime<br>–––<br>120<br>–––<br>RG= 1.8<br>~~**e**s~~<br>~~G~~<br>~~es~~<br>~~esG~~|
|tf<br>Fall Time<br>–––<br>95<br>–––<br>Ciss<br>Input Capacitance<br>––– 17890 –––<br>pF<br>VGS= 0V<br>Coss<br>Output Capacitance<br>–––<br>2640<br>–––<br>VDS= 25V<br>Crss<br>Reverse Transfer Capacitance<br>–––<br>1830<br>–––<br>ƒ = 500 kHz<br>Cosseff.<br>Effective Output Capacitance<br>–––<br>3785<br>–––<br>VGS= 0V, VDS= 0V to 32V<br>~~eseGa~~|



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## AUIRF8739L2TR ~~po~~ 

## **Diode Characteristics** 

|**Symbol**|**Parameter**|**Min.**|**Typ. **|**Max.**|**Units**|**Conditions**|
|---|---|---|---|---|---|---|
|IS|Continuous Source Current<br>(BodyDiode)|–––|–––|545|A|MOSFET symbol<br>showing  the<br>integral reverse<br>p-njunction diode.|
|ISM|Pulsed Source Current<br>(BodyDiode) |–––|–––|1150|A||
|VSD<br>~~i~~|Diode Forward Voltage<br>~~i~~|–––<br>~~i~~|–––<br>~~i~~|1.2<br>~~i~~|V<br>~~i~~|TJ= 25°C,IS= 195A,VGS= 0V<br>~~i~~|
|trr <br>~~i~~|Reverse RecoveryTime<br>~~i~~|–––<br>~~i~~|47<br>~~i~~|–––<br>~~i~~|ns<br>~~i~~|IF= 195A, VDD= 20V<br>dv/dt = 100A/µs<br>~~i~~|
|Qrr<br>~~i~~|Reverse RecoveryCharge<br>~~i~~|–––<br>~~i~~|66<br>~~i~~|–––<br>~~i~~|nC<br>~~i~~||



 Surface mounted on 1 in.  Mounted to a PCB with square Cu board  (still air). small clip heatsink (still air) 

 Mounted on minimum footprint full size board with metalized back and with small 

clip heatsink (still air). 

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10000<br>VGS<br>TOP           15V<br>10V<br>1000 emel||leaany” apemall 8.0V 7.0V |<br>6.0V<br>5.5V<br>5.0V<br>Foul cama BOTTOM 4.5V |<br>100<br>ceeZat\|||ee ee<br>eT LE UTA<br>10 eT 4.5V AY THT<br> 60µs PULSE WIDTH<br>1 eePEee Tj = 25°C mailHl<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig. 1  Typical Output Characteristics<br>3.0<br>ID = 195A<br>2.0<br>1.0<br>TJ = 125°C<br>TJ = 25°C<br>[Ne tsn Teee<br>0.0<br>4 6 8 10 12 14 16 18 20<br>VGS, Gate -to -Source Voltage  (V)<br>Typical On-Resistance vs. Gate Voltage<br>10000<br>VDS = 25V<br> 60µs PULSE WIDTH<br>1000 a=<br>a<br>ee ee ee 4 |) er<br>100<br>T = -40°C<br>ee J<br>10 /se TJ = 25 ° C<br>T = 175°C<br>J<br>PF pf<br>1<br>0.1<br>= =<br>2.0 3.0 4.0 5.0 6.0 7.0<br>VGS, Gate-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>)<br> <br>RDS(on),  Drain-to -Source On Resistance (m<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig. 3** Typical On-Resistance vs. Gate Voltage 

**Fig 5.** Transfer Characteristics 

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10000<br>VGS<br>TOP           15V<br>10V<br>HHL 8.0V<br>| 7.0V<br>6.0V<br>1000 5.5V<br>5.0V<br>as) Zee BOTTOM 4.5V<br>; | | cg He |<br>Air 4.5V<br>100 Ae eel<br>Ot<br>aTI<br> 60µs PULSE WIDTH<br>10 PET Tj = 175°C Baill<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig. 2** Typical Output Characteristics 

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0.7<br>TJ = 125°C<br>0.6<br>0.5<br>0.4<br>TJ = 25°C<br>0.3<br>0 40 80 120 160 200<br>ID, Drain Current (A)<br>Fig. 4  Typical On-Resistance vs. Drain Current<br>2.0<br>ID = 195A<br>1.8<br>1.6 V GS  = 10V THYLLY 4<br>1.4<br>1.2<br>1.0 oeeeceeeeee<br>0.8<br>0.6 SAGARA<br>-60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>TJ , Junction Temperature (°C)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>)<br><br> m<br>RDS(on),  Drain-to -Source On Resistance (<br>**----- End of picture text -----**<br>


**Fig. 4** Typical On-Resistance vs. Drain Current 

**Fig 6.** Normalized On-Resistance vs. Temperature 

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AUIRF8739L2TR<br>ee<br>4.5 10000<br>4.0<br>PLETETN 1000 PpaSffaaSffaffaa<br>T = 175°C<br>3.5 J<br>100<br>3.0 I D  = 250µA<br>ID = 1.0mA 10 T J  = 25°C<br>2.5 ID = 1.0A<br>1<br>2.0<br>VGS = 0VGS = 0V= 0V<br>1.5 0.1<br>LEE ELLE AA<br>-75 -50 -25 0 25 50 75 100 125 150 175 0.2 0.4 0.6 0.8 1.0 1.2 1.4<br>TJ , Temperature ( °C ) VSD, Source-to-Drain Voltage (V)<br>VGS(th) Gate threshold Voltage (V) ISD, Reverse Drain Current (A)<br>**----- End of picture text -----**<br>


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10000<br>1000<br>PpaSffaaSffaffaa<br>T = 175°C<br>J<br>100<br>10 T J  = 25°C<br>1<br>VGS = 0VGS = 0V= 0V<br>0.1<br>AA<br>0.2 0.4 0.6 0.8 1.0 1.2 1.4<br>VSD, Source-to-Drain Voltage (V)<br>ISD, Reverse Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig. 7** Typical Threshold Voltage vs. Junction Temperature 

**Fig 8.** Typical Source-Drain Diode Forward Voltage 

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500 100000 VGS   = 0V,       f = 1 MHZ<br>Ciss  = Cgs + Cgd,  Cds SHORTED<br>400 TE T J  = 25°C A C Crss  oss    = C = Cgds d + Cgd<br>C iss<br>300<br>TJ = 175°C<br>10000 Coss<br>200 Crss<br>100<br>VDS = 10V<br>380µs PULSE WIDTH<br>0 A+[i 1000 GUEiia<br>0 40 80 120 160 200 0.1 1 10 100<br>ID, Drain-to-Source Current (A) VDS, Drain-to-Source Voltage (V)<br>Typical Forward Transconductance vs. Drain Current  Fig 10.   Typical Capacitance vs. Drain-to-Source Voltage<br>16 600<br>ID= 195A LIMITED BY PACKAGE<br>500<br>12 V DS = 32V<br>VDS= 20V 400<br>as<br>24 Bam<br>8 yf 300 Perr<br>200<br>4<br>= 100 \<br>0 Jt 0 CCE<br>0 100 200 300 400 500 25 50 75 100 125 150 175<br> QG  Total Gate Charge (nC)  TC,  Case Temperature (°C)<br>Gfs, Forward Transconductance (S)<br>C, Capacitance (pF)<br>VGS, Gate-to-Source Voltage (V)<br>ID,  Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 10.** Typical Capacitance vs. Drain-to-Source Voltage 

**Fig 9.** Typical Forward Transconductance vs. Drain Current 

**Fig 11.** Typical Gate Charge vs. 

**Fig 12.** Maximum Drain Current vs. Case Temperature 

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1000<br>eee eeeee<br>pg Et fy ere<br>psedenendgarbecenengennedecsieses| 1msec<br>100<br>Limited by<br>Package 100µsec<br>10<br>ame ea<br>OPERATION IN THIS AREA  10msec<br>LIMITED BY R DS (on)<br>1 Tc = 25°C D C<br>Tj = 175°C<br>Single Pulse<br>0.1<br>nsiilienks!<br>0.1 1 10<br>VDS,  Drain-toSource Voltage (V)<br>ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


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1250<br>                 I D<br>TOP          24A<br>1000                 57A<br>\ BOTTOM   195A<br>750<br>500 \<br>250<br>0<br>SS<br>25 50 75 100 125 150 175<br>Starting TJ, Junction Temperature (°C)<br>EAS, Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


## **Fig 13.** Maximum Safe Operating Area 

**Fig 14.** Maximum Avalanche Energy vs. Temperature 

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1<br>D = 0.50<br>0.1 A 0.20 =<br>0.10<br>0.05<br>Pe ee<br>0.01 = 0.02 a col 0 ee|TR<br>0.01<br>SINGLE PULSE<br>0.001 ( THERMAL RESPONSE )<br>Notes:<br>1. Duty Factor D = t1/t2<br>0.0001 ee 2. Peak Tj = P dm x Zthjc + Tc I<br>1E-006 1E-005 0.0001 0.001 0.01 0.1<br>t1 , Rectangular Pulse Duration (sec)<br>Fig 15.   Maximum Effective Transient Thermal Impedance, Junction-to-Case<br>1000<br>Allowed avalanche Current vs avalanche<br>pulsewidth, tav, assuming  Tj = 150C and<br>Tstart =25°C (Single Pulse)<br>EESTI Pu Hl<br>100 UALR<br>FEE LTTE TE<br>PT TTA ZENASAE NEE<br>PETZ PSST<br>10<br>ELEC CETITPSACTTIE- oop}<br>Allowed avalanche Current vs avalanche<br>pulsewidth, tav, assuming  j = 25°C and  J<br>Tstart = 150 ° C. (Single Pulse) eee Se ee<br>Po|pLPNETIPSOEETTTTEoe HHEET<br>1 enn<br>1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01<br>tav (sec)<br>Avalanche Current (A)<br>Thermal Response ( Z thJC ) °C/W<br>**----- End of picture text -----**<br>


**Fig 16.** Typical Avalanche Current vs. Pulse Width 

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|<br>wD<br>Ié4aR<br>**----- End of picture text -----**<br>


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350<br>TOP          Single Pulse<br>300 Waa BOTTOM   1.0% Duty Cycle ‘|<br>ID = 195A<br>250 RNG a<br>200 ANNO<br>150 PENNE<br>100 AL N IN\NEELLE<br>50 CL ELLENNEEIN<br>NS to<br>PRR<br>0 A<br>25 50 75 100 125 150 175<br>Starting TJ , Junction Temperature (°C)<br>EAR , Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Notes on Repetitive Avalanche Curves , Figures 16, 17: (For further info, see AN-1005 at www.irf.com)** 

1. Avalanche failures assumption: 

   - Purely a thermal phenomenon and failure occurs at a temperature far in 

   - excess of Tjmax. This is validated for every part type. 

2. Safe operation in Avalanche is allowed as long as Tjmax is not exceeded. 

3.  Equation below based on circuit and waveforms shown in Figures 18a, 18b. 

4.  PD (ave) = Average power dissipation per single avalanche pulse. 

5.  BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 

6.  Iav = Allowable avalanche current. 

7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 16, 17). 

   - tav = Average time in avalanche. 

   - D = Duty cycle in avalanche =  tav ·f 

   - ZthJC(D, tav) = Transient thermal resistance, see Figures 15) 

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PD (ave) = 1/2 ( 1.3·BV·Iav) =   T/ ZthJC<br>Iav = 2  T/ [1.3·BV·Zth]<br>EAS (AR) = PD (ave)·tav<br>**----- End of picture text -----**<br>


**Fig 17.** Maximum Avalanche Energy vs. Temperature 

**Fig 18a.** Unclamped Inductive Test Circuit 

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Fig<br>**----- End of picture text -----**<br>


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VDD  a<br>**----- End of picture text -----**<br>


**Fig 19a.** Gate Charge Test Circuit 

**Fig 19b.** Gate Charge Waveform 

**Fig 20a.** Switching Time Test Circuit 

**Fig 20b.** Switching Time Waveforms 

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## **DirectFET[®] Board Footprint, L8 Outline** 

## **(Large Size Can, 8-Source Pads)** 

Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and  substrate designs. 

**==> picture [411 x 184] intentionally omitted <==**

**----- Start of picture text -----**<br>
G = GATE<br>D = DRAIN<br>S = SOURCE<br>D D<br>S S<br>se| Z a oe<br>W777] S 77 S 7 ; 77.<br>D G ; D<br>VW, YY Z Z S 7) yr“) S<br>TI 777 S 0777) S 7<br>D D<br>**----- End of picture text -----**<br>


Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 

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AUIRF8739L2TR 

## **DirectFET[®] Outline Dimension, L8 Outline** 

## **(Large Size Can, 8-Source Pads)** 

Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and  substrate designs. 

**==> picture [104 x 151] intentionally omitted <==**

**----- Start of picture text -----**<br>
DIMENSIONS<br>METRIC IMPERIAL<br>CODE MIN MAX MIN MAX<br>A 9.05 9.15 0.356 0.360<br>B 6.85 7.10 0.270 0.280<br>C 5.90 6.00 0.232 0.236<br>D 0.55 0.65 0.022 0.026<br>E 0.58 0.62 0.023 0.024<br>F 1.18 1.22 0.046 0.048<br>G 0.98 1.02 0.039 0.040<br>H 0.73 0.77 0.029 0.030<br>J 0.38 0.42 0.015 0.017<br>K 1.35 1.45 0.053 0.057<br>L 2.55 2.65 0.100 0.104<br>L1 5.35 5.45 0.211 0.215<br>M 0.68 0.74 0.027 0.029<br>P 0.09 0.17 0.003 0.007<br>R 0.02 0.08 0.001 0.003<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Dimensions are shown in<br>millimeters (inches)<br>**----- End of picture text -----**<br>


## **DirectFET[® ] Part Marking** 

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**----- Start of picture text -----**<br>
"AU" = GATE AND<br>AUTOMOTIVE MARKING<br>LOGO<br>PART NUMBER<br>BATCH NUMBER<br>DATE CODE<br>Line above the last character of<br>the date code indicates "Lead-Free"<br>**----- End of picture text -----**<br>


Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 

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IéaR|y_| NN 

AUIRF8739L2TR 

**DirectFET[® ] Tape & Reel Dimension (Showing component orientation)** 

NOTE: Controlling dimensions in mm Std reel quantity is 4000 parts, ordered as AUIRF8739L2TR. 

**==> picture [126 x 105] intentionally omitted <==**

**----- Start of picture text -----**<br>
REEL DIMENSIONS<br>STANDARD OPTION  (QTY 4000)<br>METRIC IMPERIAL<br>CODE MIN MAX MIN MAX<br>  A 330.00 N.C 12.992 N.C<br>  B 20.20 N.C 0.795 N.C<br>  C 12.80 13.20 0.504 0.520<br>  D 1.50 N.C 0.059 N.C<br>  E 99.00 100.00 3.900 3.940<br>  F N.C 22.40 N.C 0.880<br>  G 16.40 18.40 0.650 0.720<br>  H 15.90 19.40 0.630 0.760<br>**----- End of picture text -----**<br>


## LOADED TAPE FEED DIRECTION 

|||DIMENSIONS|DIMENSIONS|DIMENSIONS||
|---|---|---|---|---|---|
|||METRIC||IMPERIAL||
|NOTE: CONTROLLING<br>DIMENSIONS IN MM|CODE|MIN|MAX|MIN|MAX|
||A|11.90|12.10|4.69|0.476|
||B|3.90|4.10|0.154|0.161|
||C|15.90|16.30|0.623|0.642|
||D|7.40|7.60|0.291|0.299|
||E|7.20|7.40|0.283|0.291|
||F|9.90|10.10|0.390|0.398|
||G|1.50|N.C|0.059|N.C|
||H|1.50|1.60|0.059|0.063|



Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 

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## **Qualification Information[† ]** 

|**Qualification Information[† ]**|**Qualification Information[† ]**|||
|---|---|---|---|
|**Qualification Level**||Automotive<br>(per AEC-Q101)||
|||Comments:  This part number(s) passed Automotive qualification.  IR’s<br>Industrial and Consumer qualification level is granted by extension of the<br>higher Automotive level.||
|Moisture Sensitivity Level||DirectFET2 L-CAN|MSL1|
|**ESD**|Machine Model|Class M4 (+/- 800V)††||
|||AEC-Q101-002||
||Human Body Model|Class H2 (+/- 4000V)††||
|||AEC-Q101-001||
|**RoHS Compliant**||Yes||



   - Qualification standards can be found at International Rectifier’s web site:  http//www.irf.com/ 

   - ††  Highest passing voltage. 

-  Click on this section to link to the appropriate technical paper. 

-  Click on this section to link to the DirectFET[®] Website. 

-  Surface mounted on 1 in. square Cu board, steady state. 

-  TC measured with thermocouple mounted to top (Drain) of part. 

-  Repetitive rating;  pulse width limited by max. junction temperature. 

-  Starting TJ = 25°C, L = 0.016mH, RG = 50, IAS = 195A, Vgs = 20V. 

-  Pulse width  400µs; duty cycle  2%. 

-  Used double sided cooling, mounting pad with large heatsink. 

-  Mounted on minimum footprint full size board with metalized back and with small clip heatsink. 

-  R is measured at TJ of approximately 90°C. 

- ** Starting TJ = 25°C, L = 0.1mH, RG = 50, IAS = 288A, Vgs = 20V 

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## **IMPORTANT NOTICE** 

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## **WORLD HEADQUARTERS:** 

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Tel: (310) 252-7105 

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