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AUIRF7769L2TR
Power MOSFET, N Channel, 100 V, 124 A, 3500 µohm, DirectFET L8, Surface Mount
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- Manufacturer: INFINEON
- Product type: Single MOSFETs
- Transistor Polarity:N Channel; Continuous Drain Current Id:124A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0028ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 15Pins
- Channel Type: N Channel
- Product Range: HEXFET
- Qualification: AEC-Q101
- Power Dissipation: 125W
- Transistor Mounting: Surface Mount
- Rds(on) Test Voltage: 10V
- Transistor Case Style: DirectFET L8
- Drain Source Voltage Vds: 100V
- Operating Temperature Max: 175°C
- Continuous Drain Current Id: 124A
- Drain Source On State Resistance: 3500µohm
- Gate Source Threshold Voltage Max: 2.7V
| Delivery and price | |
|---|---|
| Units per pack | 2000 |
| Price | 4.65 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
**AUTOMOTIVE GRADE** AUIRF7769L2TR ~~a~~
## ~~Cinfin eon~~
## Automotive DirectFET[®] Power MOSFET
- Advanced Process Technology
- Optimized for Automotive Motor Drive, DC-DC and
- other Heavy Load Applications
- Exceptionally Small Footprint and Low Profile
- High Power Density
- Low Parasitic Parameters
- Dual Sided Cooling
- 175°C Operating Temperature
- Repetitive Avalanche Capability for Robustness and Reliability
- Lead free, RoHS and Halogen free
- Automotive Qualified *
Applicable DirectFET[®] Outline and Substrate Outline
|Automotive DirectFET|Automotive DirectFET|Automotive DirectFET|Automotive DirectFET|Automotive DirectFET|Automotive DirectFET|Automotive DirectFET|Automotive DirectFET|Automotive DirectFET|Automotive DirectFET|Automotive DirectFET|Automotive DirectFET|Automotive DirectFET[®]Power MOSFET |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
|**V(BR)DSS**||||||||||||**100V**|
|**RDS(on) typ.**||**typ.**|**typ.**|||||||||**2.8m**|
|**ID (Silicon Limited)**<br>|||**D (Silicon Limited)**<br> **max.**|||||||||**124A**<br>**3.5m**|
|**Qg (typical)**||||||||||||**200nC**|
|||||~~S~~||S|||||||
|||||~~S~~||S|||||||
|D||~~G~~||~~S~~||~~S~~||||D|||
|||||~~S~~||~~S~~|||||||
|||||L8|||||||DirectFET® ISOMETRIC||
|DirectFET® ISOMETRIC<br>L8<br>Applicable DirectFET[®]Outline and Substrate Outline |DirectFET® ISOMETRIC<br>L8<br>Applicable DirectFET[®]Outline and Substrate Outline |DirectFET® ISOMETRIC<br>L8<br>Applicable DirectFET[®]Outline and Substrate Outline |
|---|---|---|
|**SB**<br>**SC**<br>**M2**<br>**M4**<br>**L4**<br>**L6**<br>**L8**<br>**Description**<br>~~[Tf~~<br>~~—Eeeeee~~|||
|The AUIRF7769L2TR combines the latest Automotive HEXFET®Power MOSFET Silicon technology with the advanced DirectFET®packaging to<br>achieve the lowest on-state resistance in a package that has the footprint of a DPak (TO-252AA) and only 0.7 mm profile. The DirectFET®package is|||
|compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering<br>techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET®package allows dual|||
|sided cooling to maximize thermal transfer in automotive power systems.|||
This HEXFET[®] Power MOSFET is designed for applications where efficiency and power density are essential. The advanced DirectFET[®] packaging platform coupled with the latest silicon technology allows the AUIRF7769L2TR to offer substantial system level savings and performance improvement specifically in motor drive, high frequency DC-DC and other heavy load applications on ICE, HEV and EV platforms. This MOSFET utilizes the latest processing techniques to achieve low on-resistance and low Qg per silicon area. Additional features of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for high current automotive applications.
|**Base Part Number**|**Package Type**|**Standard Pack**|**Standard Pack**|**Orderable Part Number**|
|---|---|---|---|---|
|||**Form**|**Quantity**||
|AUIRF7769L2|DirectFET Large Can|Tape and Reel|4000|AUIRF7769L2TR|
## **Absolute Maximum Ratings**
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolutemaximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
|~~QO~~|**Parameter**<br>~~QO~~|**Max.**<br>~~QO~~|**Units**<br>~~QO~~|
|---|---|---|---|
|VDS<br>~~i~~|Drain-to-Source Voltage<br>~~i~~|100<br>~~i~~|V<br>~~i~~|
|VGS<br>~~i~~<br>~~as~~|Gate-to-Source Voltage<br>~~i~~<br>~~I~~|±20<br>~~i~~<br>~~I~~||
|ID @TC= 25°C<br>~~as~~<br>~~—~~|Continuous Drain Current,VGS @10V(Silicon Limited) <br>~~I~~<br>~~—~~|124<br>~~I~~<br>~~—~~|A<br>~~—~~|
|ID @TC= 100°C<br>~~as~~<br>~~—~~|Continuous Drain Current,VGS @10V(Silicon Limited) <br>~~I~~<br>~~—~~|88<br>~~I~~<br>~~—~~||
|ID @TA= 25°C<br>~~—~~|Continuous Drain Current,VGS @10V(Silicon Limited) <br>~~—~~|20<br>~~—~~||
|ID @TC= 25°C<br>~~—~~<br>~~_~~|Continuous Drain Current,VGS @10V(Package Limited)<br>~~—~~|375<br>~~—~~||
|IDM<br>~~—~~<br>~~_~~|Pulsed Drain Current<br>~~—~~|500<br>~~—~~||
|PD @TC= 25°C<br>~~—~~<br>~~_~~<br>~~——————————————————~~|Power Dissipation<br>~~—~~<br>~~——————————————————~~|125<br>~~—~~<br>~~——————————————————~~|W<br>~~—~~<br>~~——————————————————~~|
|PD @TA= 25°C<br>~~——————————————————~~|Power Dissipation<br>~~——————————————————~~|3.3<br>~~——————————————————~~||
|EAS<br>~~——————————————————~~<br>~~a~~|Single Pulse Avalanche Energy (Thermally Limited)<br>~~——————————————————~~<br>|260<br>~~——————————————————~~<br>|mJ<br>~~——————————————————~~<br>|
|IAR<br>~~se~~|Avalanche Current<br>~~se~~|See Fig. 16, 17, 18a, 18b<br>~~se~~<br>~~nn~~|A<br>~~se~~|
|EAR<br>~~se~~<br>~~es~~|Repetitive Avalanche Energy <br>~~se~~<br>~~nn~~||mJ<br>~~se~~|
|TP<br>~~se~~<br>~~es~~|Peak SolderingTemperature<br>~~se~~<br>~~nn~~|270<br>~~se~~<br>~~nn~~|°C<br>~~se~~|
|TJ<br>TSTG<br>~~es~~<br>~~a~~|Operating Junction and<br>Storage Temperature Range<br>~~nn~~|-55 to + 175<br>~~nn~~||
HEXFET® is a registered trademark of Infineon.
- Qualification standards can be found at www.infineon.com
1
2015-10-5
~~Cinfin eon~~
AUIRF7769L2TR ~~LLL~~
## **Thermal Resistance**
|**Symbol**<br>**Parameter**<br>**Typ. **<br>**Max.**<br>**Units**|
|---|
|RJA<br>Junction-to-Ambient<br>–––<br>45|
|RJA<br>Junction-to-Ambient<br>12.5<br>–––|
|RJA<br>Junction-to-Ambient<br>20<br>–––<br>°C/W|
|RJ-Can<br>Junction-to-Can<br>–––<br>1.2|
|RJ-PCB<br>Junction-to-PCB Mounted<br>–––<br>0.5|
|Linear DeratingFactor<br>0.83<br>W/°C|
|**Static Electrical Characteristics@ TJ = 25°C(unless otherwise specified) **|
|**Symbol**<br>**Parameter**<br>**Min.**<br>**Typ. Max. Units**<br>**Conditions**<br>V(BR)DSS<br>Drain-to-Source Breakdown Voltage<br>100<br>–––<br>–––<br>V<br>VGS= 0V, ID= 250µA<br>V(BR)DSS/TJBreakdown Voltage Temp. Coefficient<br>–––<br>0.02<br>–––<br>V/°C Reference to 25°C, ID= 2.0mA<br>RDS(on) <br>Static Drain-to-Source On-Resistance<br>–––<br>2.8<br>3.5<br>m VGS= 10V, ID= 74A<br>VGS(th)<br>Gate Threshold Voltage<br>2.0<br>2.7<br>4.0<br>V<br>VDS= VGS, ID= 250µA<br>VGS(th)/TJ<br>Gate Threshold Voltage Coefficient<br>–––<br>-10<br>––– mV/°C<br>gfs<br>Forward Transconductance<br>410<br>–––<br>–––<br>S<br>VDS= 25V, ID= 74A<br>IDSS<br>Drain-to-Source Leakage Current<br>–––<br>–––<br>20<br>µA<br>VDS= 100V, VGS= 0V<br>–––<br>–––<br>250<br>VDS= 80V, VGS= 0V, TJ= 125°C<br>IGSS<br>Gate-to-Source Forward Leakage<br>–––<br>–––<br>100<br>nA<br>VGS= 20V<br>Gate-to-Source Reverse Leakage<br>–––<br>–––<br>-100<br>VGS= -20V<br>**Dynamic Electrical Characteristics@ TJ = 25°C(unless otherwise specified) **<br>~~a~~<br>~~nD I (OE(OO~~<br>~~ee~~<br>~~rs I rs~~<br>~~ns~~<br>~~Ee~~<br>~~—SS~~<br>~~SL—~~|
|**Symbol**<br>**Parameter**<br>**Min.**<br>**Typ. Max. Units**<br>**Conditions**<br>Qg<br>Total Gate Charge<br>–––<br>200<br>300<br>nC<br>VDS= 50V<br>Qgs1<br>Gate-to-Source Charge<br>–––<br>30<br>–––<br>VGS= 10V<br>Qgs2<br>Gate-to-Source Charge<br>–––<br>9.0<br>–––<br>ID= 74A<br>Qgd<br>Gate-to-Drain("Miller")Charge<br>–––<br>110<br>165<br>See Fig.11<br>~~ee~~<br>~~rs I I nd I(~~<br>~~—es~~|
|Qgodr<br>Gate Charge Overdrive<br>–––<br>51<br>–––<br>Qsw<br>Switch Charge(Qgs2+ Qgd)<br>–––<br>119<br>–––<br>Qoss<br>Output Charge<br>–––<br>53<br>–––<br>nC<br>VDS= 16V, VGS= 0V<br>td(on)<br>Turn-On DelayTime<br>–––<br>44<br>–––<br>ns<br>VDD= 50V, VGS= 10V<br>tr<br>Rise Time<br>–––<br>32<br>–––<br>ID= 74A<br>td(off)<br>Turn-Off DelayTime<br>–––<br>92<br>–––<br>RG= 1.8<br>tf<br>Fall Time<br>–––<br>41<br>–––<br>Ciss<br>Input Capacitance<br>––– 11560 –––<br>pF<br>VGS= 0V<br>Coss<br>Output Capacitance<br>–––<br>1240<br>–––<br>VDS= 25V<br>Crss<br>Reverse Transfer Capacitance<br>–––<br>590<br>–––<br>ƒ= 1.0 MHz<br>Coss<br>Output Capacitance<br>–––<br>6665<br>–––<br>VGS= 0V, VDS= 1.0V, ƒ = 1.0 MHz<br>Coss<br>Output Capacitance<br>–––<br>690<br>–––<br>VGS= 0V, VDS= 80V,ƒ= 1.0 MHz<br>RG<br>Internal Gate Resistance<br>–––<br>1.5<br>–––<br><br>~~———~~<br>~~—_~~<br>~~—~~<br>~~esen~~<br>~~—Se~~<br>~~rr~~|
Notes through are on page 3
2 2015-10-5 ~~re~~
|<br>AUIRF7769L2TR<br>~~eesor~~|<br>AUIRF7769L2TR<br>~~eesor~~|<br>AUIRF7769L2TR<br>~~eesor~~|<br>AUIRF7769L2TR<br>~~eesor~~|<br>AUIRF7769L2TR<br>~~eesor~~|<br>AUIRF7769L2TR<br>~~eesor~~|<br>AUIRF7769L2TR<br>~~eesor~~|<br>AUIRF7769L2TR<br>~~eesor~~|
|---|---|---|---|---|---|---|---|
|**Diode Characteristics**||||||||
|**Symbol**<br>~~a~~|**Parameter**|**Min.**|**Typ. Max. Units**|**. Max. Units**|**. Max. Units**|**Conditions**|**Conditions**|
|IS<br>ISM|Continuous Source Current<br>(BodyDiode)<br>Pulsed Source Current<br>(BodyDiode) |––– –––<br>––– –––|––– –––<br>––– –––|124<br>500|A|MOSFET symbol<br>showing the<br>integral reverse<br>p-njunction diode.|D<br>S<br>G|
|VSD|Diode Forward Voltage|–––|–––|1.3|V|TJ= 25°C,IS= 74A,VGS= 0V|= 0V|
|trr|Reverse RecoveryTime|–––|75|112|ns|TJ= 25°C, IF= 74A, VDD= 50V|= 50V|
|Qrr|Reverse RecoveryCharge|–––|220|330|nC|dv/dt = 100A/µs||
- Surface mounted on 1 in. square Cu board (still air).
Mounted to a PCB with small clip heatsink (still air)
Mounted on minimum footprint full size board with metalized back and with small clip heatsink (still air).
- Click on this section to link to the appropriate technical paper.
- Click on this section to link to the DirectFET[®] Website.
- Surface mounted on 1 in. square Cu board, steady state.
- TC measured with thermocouple mounted to top (Drain) of part.
- Repetitive rating; pulse width limited by max. junction temperature.
- Starting TJ = 25°C, L = 0.09mH, RG = 25, IAS = 74A.
- Pulse width 400µs; duty cycle 2%.
- Used double sided cooling, mounting pad with large heatsink.
- Mounted on minimum footprint full size board with metalized back and with small clip heat sink.
- R is measured at TJ of approximately 90°C.
3 2015-10-5 ~~me~~
AUIRF7769L2TR ~~LL~~
## ~~Cinfineon~~
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1000<br>VGS<br>TOP 15V<br>10V<br>8.0V<br>6.0V<br>100 5.0V<br>4.5V<br>4.0V<br>BOTTOM 3.5V<br>10<br>gill a<br>1<br>3.5V 60µs PULSE WIDTH<br>SEnit ae Tj = 25°C<br>0.1<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig. 1 Typical Output Characteristics<br>10<br>I = 74A<br>D<br>Tit<br>8<br>T = 125°C<br>J<br>6<br>Etnaeee<br>4<br>S-ee<br>T = 25°C<br>J<br>2<br>Ehaenee<br>CPAP<br>0<br>2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0<br>VGS, Gate-to-Source Voltage (V)<br>Fig. 3 Typical On-Resistance vs. Gate Voltage<br>1000<br>VDS = 25V<br> 60µs PULSE WIDTH<br>a an<br>100<br>T = 175°C<br>J<br>10 T = 25°C<br>J<br>T = -40°C<br>J<br>1 Af<br>Epal<br>0.1 Ve<br>2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5<br>VGS, Gate-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>
**Fig. 3** Typical On-Resistance vs. Gate Voltage
**Fig 5.** Typical Transfer Characteristics
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1000<br>VGS<br>TOP 15V<br>10V<br>8.0V<br>6.0V<br>5.0V<br>4.5V<br>4.0V<br>BOTTOM 3.5V<br>100<br>Pull<br>3.5V<br> 60µs PULSE WIDTH<br>Tj = 175°C<br>10 pilCl ie |<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig. 2 Typical Output Characteristics<br>3.1<br>T = 25°C<br>A<br>V = 7.0V<br>GS<br>3.0 V = 8.0V<br>GS<br>{| VGS = 10V<br>2.9 ll V GS = 15V<br>—————<br>2.8 oT I<br>20 40 60 80 100<br>ID, Drain Current (A)<br>ID, Drain-to-Source Current (A)<br><br>Typical RDS(on) (m<br>**----- End of picture text -----**<br>
**Fig. 4** Typical On-Resistance vs. Drain Current
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2.5<br>ID = 74A<br>V GS = 10V<br>2.0 nny<br>1.5<br>1.0 AL<br>LLL<br>0.5 ATLL<br>-60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>TJ , Junction Temperature (°C)<br>RDS(on) , Drain-to-Source On Resistance (Normalized)<br>**----- End of picture text -----**<br>
**Fig 6.** Normalized On-Resistance vs. Temperature
2015-10-5
4
~~Cinfineon~~
AUIRF7769L2TR ~~rr~~
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4.0<br>ID = 1.0A<br>3.5 I D = 1.0mA<br>ID = 250µA<br>eT<br>3.0<br>2.5<br>2.0<br>CCOCLRSSRCE<br>1.5<br>1.0 co<br>0.5 FECES<br>-75 -50 -25 0 25 50 75 100 125 150 175<br>TJ , Temperature ( °C )<br>VGS(th) Gate threshold Voltage (V)<br>**----- End of picture text -----**<br>
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1000100 FT<br>TJ = 175°C<br>10 TJ = 25°C<br>Le TJ = -40°C<br>1<br>Hf<br>VGS = 0V<br>0.1 Jip<br>0.2 0.4 0.6 0.8 1.0 1.2<br>VSD, Source-to-Drain Voltage (V)<br>ISD, Reverse Drain Current (A)<br>**----- End of picture text -----**<br>
**Fig. 7** Typical Threshold Voltage vs. Junction Temperature
**Fig 8.** Typical Source-Drain Diode Forward Voltage
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400 100000<br>VGS = 0V, f = 1 MHZ<br>Ciss = Cgs + Cgd, Cds SHORTED<br>Crss = Cgd<br>300 T J = 25°C C oss = C ds + C gd<br>10000 Ciss<br>Coss<br>200<br>Crss<br>tea TJ = 175°C 1000 RE<br>100<br>Vale - hata<br>VDS = 5V<br>380µs PULSE WIDTH<br>0 100<br>Anne e e ae i<br>0 20 40 60 80 100 120 140 160 1 10 100<br>ID,Drain-to-Source Current (A) VDS, Drain-to-Source Voltage (V)<br>C, Capacitance (pF)<br>Gfs, Forward Transconductance (S)<br>**----- End of picture text -----**<br>
**Fig 9.** Typical Forward Trans conductance vs. Drain Current
**Fig 10.** Typical Capacitance vs. Drain-to-Source Voltage
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14<br>I = 74A<br>D<br>12 VDS= 80V<br>VDS= 50V Ty<br>10 V DS = 20V<br>8 ye<br>6<br>7 4a_<br>4<br>Vaan<br>2<br>0 Anna<br>0 50 100 150 200 250 300<br> QG Total Gate Charge (nC)<br>VGS, Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>
**Fig 11.** Typical Gate Charge vs. Gate-to-Source Voltage
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125<br>100<br>TAT<br>75<br>UPN<br>50<br>ALLELE<br>25 LTTE<br>EE<br>0 EEE ELLE LA<br>25 50 75 100 125 150 175<br>TC , CaseTemperature (°C)<br>ID , Drain Current (A)<br>**----- End of picture text -----**<br>
**Fig 12.** Maximum Drain Current vs. Case Temperature
5 2015-10-5 ~~==]TT~~
AUIRF7769L2TR ~~LLL~~
## ~~Cinfineon~~
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10000 1200<br>OPERATION IN THIS AREA ID<br>LIMITED BY R DS(on) TOP 13A<br>1000<br>1000 20A<br>BOTTOM 74A<br>800<br>100<br>100µsec<br>600<br>DC<br>anh ASHE<br>10<br>10msec 400<br>1 Tc = 25°C 1msec 200<br>Tj = 175°C<br>Single Pulse<br>0.1 aari ai 0 SPSNES<br>0 1 10 100 1000 25 50 75 100 125 150 175<br>VDS , Drain-toSource Voltage (V) Starting TJ, Junction Temperature (°C)<br>ID, Drain-to-Source Current (A)<br>EAS, Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>
**Fig 13.** Maximum Safe Operating Area
**Fig 14.** Maximum Avalanche Energy vs. Temperature
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10<br>1 D = 0.50 se — | AA<br>0.20<br>0.010.1 eee 0.01 0.020.050.10 J J 1 1 R 1 R1 2 R2 2 R2 R3 3 R33 R4 4 R4 4 C C Ri (00.6140 0.4520 .1°C/W) 080 | 00.053914 0.006099 .000i (sec)171<br>Ci= iRi<br>Ci= iRi 1.47e-05 0.036168<br>TTI, FE<br>0.001 SINGLE PULSE<br>Notes:<br>( THERMAL RESPONSE ) 1. Duty Factor D = t1/t2<br>2. Peak Tj = P dm x Zthjc + Tc<br>0.0001 Ce ee<br>1E-006 1E-005 0.0001 0.001 0.01 0.1 1<br>t1 , Rectangular Pulse Duration (sec)<br>Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case<br>1000<br>Allowed avalanche Current vs avalanche<br>Duty Cycle = Single Pulse<br>pulsewidth, tav, assuming Tj = 150°C and<br>Tstart =25°C (Single Pulse)<br>100 |<br>0.01<br>10 ASE TTT<br>0.05<br>SESS 0.10 etl Pe TT<br>1 PE Se Si |<br>Allowed avalanche Current vs avalanche<br>pulsewidth, tav, assuming j = 25°C and<br>Tstart = 150°C.<br>0.1<br>Lee —ereeeet {UIE ITE<br>1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01<br>tav (sec)<br>Thermal Response ( Z thJC ) °C/W<br>Avalanche Current (A)<br>**----- End of picture text -----**<br>
**Fig 16.** Typical Avalanche Current vs. Pulse Width
6
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Cinfineon<br>**----- End of picture text -----**<br>
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280<br>TOP Single Pulse<br>240 BOTTOM 1% Duty Cycle<br>ID = 74A<br>200<br>16012080 PNETNENNUN \ IN EEE EE<br>40 PS [LENEEN] IN IN<br>0 Pe NUN NJ NS IN IS<br>25 50 75 100 125 150 175<br>Starting TJ , Junction Temperature (°C)<br>EAR , Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>
## **Notes on Repetitive Avalanche Curves , Figures 16, 17:**
**(For further info, see AN-1005 at www.infineon.com)**
1. Avalanche failures assumption:
- Purely a thermal phenomenon and failure occurs at a temperature far in
- excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long as Tjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 18a, 18b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 16, 17).
- tav = Average time in avalanche.
- D = Duty cycle in avalanche = tav ·f
- ZthJC(D, tav) = Transient thermal resistance, see Figures 15)
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PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC<br>Iav = 2 T/ [1.3·BV·Zth]<br>EAS (AR) = PD (ave)·tav<br>**----- End of picture text -----**<br>
**Fig 17.** Maximum Avalanche Energy vs. Temperature
**Fig 18a.** Unclamped Inductive Test Circuit
**Fig 18b.** Unclamped Inductive Waveforms
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VDD<br>**----- End of picture text -----**<br>
**Fig 19a.** Gate Charge Test Circuit
**Fig 19b.** Gate Charge Waveform
**Fig 20a.** Switching Time Test Circuit
**Fig 20b.** Switching Time Waveforms
2015-10-5
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~~Cinfineon~~
AUIRF7769L2TR ~~|~~
## **DirectFET[®] Board Footprint, L8 (Large Size Can).**
Please see DirectFET **[®]** application note AN-1035 for all details regarding the assembly of DirectFET **[®]** . This includes all recommendations for stencil and substrate designs.
**==> picture [368 x 194] intentionally omitted <==**
**----- Start of picture text -----**<br>
G = GATE<br>D = DRAIN<br>S = SOURCE<br>D D<br>S S<br>i]<br>4 S S<br>D G D A<br>i] S S<br>S S<br>D D<br>**----- End of picture text -----**<br>
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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~~Cinfineon~~
AUIRF7769L2TR ~~|~~
## **DirectFET[®] Outline Dimension, L8 (Large Size Can).**
Please see DirectFET **[®]** application note AN-1035 for all details regarding the assembly of DirectFET **[®]** . This includes all recommendations for stencil and substrate designs.
**==> picture [98 x 142] intentionally omitted <==**
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DIMENSIONS<br>METRIC IMPERIAL<br>CODE MIN MAX MIN MAX<br>A 9.05 9.15 0.356 0.360<br>B 6.85 7.10 0.270 0.280<br>C 5.90 6.00 0.232 0.236<br>D 0.55 0.65 0.022 0.026<br>E 0.58 0.62 0.023 0.024<br>F 1.18 1.22 0.046 0.048<br>G 0.98 1.02 0.039 0.040<br>H 0.73 0.77 0.029 0.030<br>J 0.38 0.42 0.015 0.017<br>K 1.35 1.45 0.053 0.057<br>L 2.55 2.65 0.100 0.104<br>L1 5.35 5.45 0.211 0.215<br>M 0.68 0.74 0.027 0.029<br>P 0.09 0.17 0.003 0.007<br>R 0.02 0.08 0.001 0.003<br>**----- End of picture text -----**<br>
## **DirectFET[® ] Part Marking**
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"AU" = GATE AND<br>AUTOMOTIVE MARKING<br>LOGO<br>PART NUMBER<br>BATCH NUMBER<br>DATE CODE<br>Line above the last character of<br>the date code indicates "Lead-Free"<br>**----- End of picture text -----**<br>
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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AUIRF7769L2TR ~~LLL~~
## ~~Cinfineon~~
## **DirectFET[® ] Tape & Reel Dimension (Showing component orientation)**
## LOADED TAPE FEED DIRECTION
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NOTE: Controlling dimensions in mm<br>Std reel quantity is 4000 parts. (ordered as AUIRF7769L2TR).<br>**----- End of picture text -----**<br>
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REEL DIMENSIONS<br>STANDARD OPTION (QTY 4000)<br>METRIC IMPERIAL<br>CODE MIN MAX MIN MAX<br> A 330.00 N.C 12.992 N.C<br> B 20.20 N.C 0.795 N.C<br> C 12.80 13.20 0.504 0.520<br> D 1.50 N.C 0.059 N.C<br> E 99.00 100.00 3.900 3.940<br> F N.C 22.40 N.C 0.880<br> G 16.40 18.40 0.650 0.720<br> H 15.90 19.40 0.630 0.760<br>**----- End of picture text -----**<br>
**==> picture [208 x 92] intentionally omitted <==**
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DIMENSIONS<br>METRIC IMPERIAL<br>NOTE: CONTROLLING<br>CODE MIN MAX MIN MAX<br>DIMENSIONS IN MM<br>A 11.90 12.10 4.69 0.476<br>B 3.90 4.10 0.154 0.161<br>C 15.90 16.30 0.623 0.642<br>D 7.40 7.60 0.291 0.299<br>E 7.20 7.40 0.283 0.291<br>F 9.90 10.10 0.390 0.398<br>G 1.50 N.C 0.059 N.C<br>H 1.50 1.60 0.059 0.063<br>**----- End of picture text -----**<br>
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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AUIRF7769L2TR ~~Cinfineon LLL~~ **Qualification Information** Automotive (per AEC-Q101) **Qualification Level** Comments: This part number(s) passed Automotive qualification. Infineon’s Industrial and Consumer qualification level is granted by extension of the higher Automotive level. **Moisture Sensitivity Level** DFET2 Large Can MSL1 Class M4 (+/- 800V)[†] Machine Model AEC-Q101-002 Class H3A (+/- 6000V)[† ] **ESD** Human Body Model AEC-Q101-001 N/A Charged Device Model AEC-Q101-005 **RoHS Compliant** Yes ~~——~~ † Highest passing voltage. **Revision History Date Comments** Updated datasheet with corporate template 10/5/2015 Corrected ordering table on page 1. Updated Tape and Reel option on page 10
**Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2015 All Rights Reserved.**
## **IMPORTANT NOTICE**
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office (www.infineon.com).
## **WARNINGS**
Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
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Updated at April 29, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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