AUIRF7749L2TR

**AUTOMOTIVE GRADE** AUIRF7749L2TR ~~—~~ 

## ~~Cinfin eon~~ 

Automotive DirectFET[™] Power MOSFET  

-  Advanced Process Technology 

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V 60V<br>(BR)DSS<br> Optimized for Automotive Motor Drive, DC-DC and<br>      other Heavy Load Applications   RDS(on)   typ. 1.1m <br> Exceptionally Small Footprint and Low Profile   max. 1.5m <br> High Power Density   ID  (Silicon Limited)  345A<br> Low Parasitic Parameters<br> Dual Sided Cooling   Qg 183nC<br> 175°C Operating Temperature<br> Repetitive Avalanche Allowed up to Tjmax   S S<br> Lead Free, RoHS Compliant and Halogen Free   S S<br> Automotive Qualified *   D S D<br>G S<br>S<br>S<br>Applicable DirectFET™ Outline and  Substrate Outline  L8  DirectFET2 L-can<br>SB  SC  M2   M4  L4  L6  L8<br>CT. [| . [| | |<br>**----- End of picture text -----**<br>


## **Description** 

The AUIRF7749L2 combines the latest Automotive HEXFET[®] Power MOSFET Silicon technology with the advanced DirectFET™ packaging technology to achieve exceptional performance in a package that has the footprint of a D-Pak (TO-252AA) and only 0.7mm profile. The DirectFET™ package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET[™] package allows dual sided cooling to maximize thermal transfer in automotive power systems. 

This HEXFET[®] Power MOSFET is designed for applications where efficiency and power density are of value. The advanced DirectFET™ packaging platform coupled with the latest silicon technology allows the AUIRF7749L2 to offer substantial system level savings and performance improvement specifically in motor drive, DC-DC and other heavy load applications on ICE, HEV and EV platforms. This MOSFET utilizes the latest processing techniques to achieve ultra low on-resistance per silicon area. Additional features of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for high current automotive applications. **Standard Pack Base Part Number Package Type Orderable Part Number Form Quantity** AUIRF7749L2 DirectFET[™ ] Large Can AUIRF7749L2TR ~~$+~~ Tape and Reel 4000 ~~[$§~~ **Absolute Maximum Ratings** Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolutemaximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified. 

||**Parameter**|**Max.**|**Units**|
|---|---|---|---|
|VDS|Drain-to-Source Voltage|60|V|
|ID @TC= 25°C<br>~~———~~|Continuous Drain Current,VGS @10V<br>~~———~~|345<br>~~———~~|A<br>~~———~~|
|ID @TC= 100°C<br>~~———~~|Continuous Drain Current,VGS @10V<br>~~———~~|243<br>~~———~~||
|ID @TA= 25°C<br>~~———~~|Continuous Drain Current,VGS @10V<br>~~———~~|36<br>~~———~~||
|ID @TC= 25°C<br>~~———~~|Continuous Drain Current,VGS @10V(Package limit) <br>~~———~~|375<br>~~———~~||
|IDM<br>~~———~~|Pulsed Drain Current<br>~~———~~|1380<br>~~———~~||
|PD @TC= 25°C<br>~~ae~~|Power Dissipation<br>~~ae~~|341<br>~~ae~~|W<br>~~ae~~<br>|
|PD @TA= 25°C<br>~~ae~~<br>~~SS~~|Power Dissipation<br>~~ae~~<br>|3.8<br>~~ae~~<br>||
|EAS<br>~~ae~~<br>~~SS~~|Single Pulse Avalanche Energy (ThermallyLimited) <br>~~ae~~<br>|315<br>~~ae~~<br>|mJ<br>~~ae~~<br>|
|EAS(Tested)<br>~~SS~~|Single Pulse Avalanche Energy <br>|714<br>||
|IAR<br>~~SS~~|Avalanche Current<br>|See Fig. 16, 17, 18a, 18b<br>|A<br>|
|EAR<br>~~SS~~|Repetitive Avalanche Energy <br>||mJ<br>|
|TP<br>~~SSee~~|Peak SolderingTemperature<br>~~ee~~|270<br>~~ee~~|°C<br>~~ee~~|
|TJ<br>TSTG<br>~~ee~~|Operating Junction and<br>Storage Temperature Range<br>~~ee~~|-55  to + 175<br>~~ee~~||



HEXFET® is a registered trademark of International Rectifier. ***** Qualification standards can be found at : www.infineon.com 

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## **Thermal Resistance** 

|**Symbol**<br>**Parameter**<br>**Typ. **<br>**Max.**<br>**Units**|
|---|
|RJA<br>Junction-to-Ambient<br>–––<br>40|
|RJA<br>Junction-to-Ambient<br>12.5<br>–––|
|RJA<br>Junction-to-Ambient<br>20<br>–––<br>°C/W|
|RJ-Can<br>Junction-to-Can<br>–––<br>0.44|
|RJ-PCB<br>Junction-to-PCB Mounted<br>–––<br>0.5|
|Linear DeratingFactor<br>2.3<br>W/°C|
|**Static Electrical Characteristics@ TJ = 25°C(unless otherwise specified) **|
|**Symbol**<br>**Parameter**<br>**Min.**<br>**Typ. Max. Units**<br>**Conditions**<br>V(BR)DSS<br>Drain-to-Source Breakdown Voltage<br>60<br>–––<br>–––<br>V<br>VGS= 0V, ID= 250µA<br>V(BR)DSS/TJ<br>Breakdown Voltage Temp. Coefficient<br>–––<br>56<br>––– mV/°C Reference to 25°C, ID= 3.0mA<br>RDS(on) <br>Static Drain-to-Source On-Resistance<br>–––<br>1.1<br>1.5<br>m VGS= 10V, ID= 120A<br>~~eeGO~~<br>~~esCe~~<br>~~CG~~<br>~~——————————————~~|
|VGS(th)<br>Gate Threshold Voltage<br>2.0<br>–––<br>4.0<br>V<br>VGS(th)/TJ<br>Gate Threshold Voltage Coefficient<br>–––<br>-8.8<br>––– mV/°C<br>gfs<br>Forward Trans conductance<br>185<br>–––<br>–––<br>S<br>VDS= 10V, ID= 120A<br>VDS= VGS, ID= 250µA<br>~~Se ee~~|
|RG<br>Internal Gate Resistance<br>–––<br>1.5<br>–––<br><br>~~GG~~|
|IDSS<br>Drain-to-Source Leakage Current<br>–––<br>–––<br>20<br>µA<br>VDS= 60V, VGS= 0V<br>–––<br>–––<br>250<br>VDS= 60V, VGS= 0V, TJ= 125°C<br>~~ee~~|
|IGSS<br>Gate-to-Source Forward Leakage<br>–––<br>–––<br>100<br>nA<br>VGS= 20V<br>Gate-to-Source Reverse Leakage<br>–––<br>–––<br>-100<br>VGS= -20V<br>~~———————————————~~|
|**Dynamic Electrical Characteristics@ TJ = 25°C(unless otherwise specified) **|
|**Symbol**<br>**Parameter**<br>**Min.**<br>**Typ. Max. Units**<br>**Conditions**<br>Qg<br>Total Gate Charge<br>–––<br>183<br>275<br>VDS= 30V<br>Qgs1<br>Gate-to-Source Charge<br>–––<br>39<br>–––<br>VGS= 10V<br>Qgs2<br>Gate-to-Source Charge<br>–––<br>19<br>–––<br>nC<br>ID= 120A<br>Qgd<br>Gate-to-Drain("Miller")Charge<br>–––<br>46<br>–––<br>~~CG~~<br>~~esee~~<br>~~—————~~|
|Qgodr<br>Gate Charge Overdrive<br>–––<br>79<br>–––<br>Qsw<br>Switch Charge(Qgs2+ Qgd)<br>–––<br>65<br>–––<br>Qoss<br>Output Charge<br>–––<br>119<br>–––<br>nC<br>VDS= 48V, VGS= 0V<br>td(on)<br>Turn-On DelayTime<br>–––<br>29<br>–––<br>ns<br>VDD= 30V, VGS= 10V<br>tr<br>Rise Time<br>–––<br>149<br>–––<br>ID= 120A<br>td(off)<br>Turn-Off DelayTime<br>–––<br>72<br>–––<br>RG= 1.8<br>~~——————~~<br>~~es ee~~|
|tf<br>Fall Time<br>–––<br>88<br>–––|
|Ciss<br>Input Capacitance<br>––– 10655 –––<br>pF<br>VGS= 0V<br>Coss<br>Output Capacitance<br>–––<br>1627<br>–––<br>VDS= 25V<br>Crss<br>Reverse Transfer Capacitance<br>–––<br>680<br>–––<br>ƒ= 1.0 MHz<br>Cosseff.<br>Effective Output Capacitance<br>–––<br>1959<br>–––<br>VGS= 0V, VDS= 0V to 48V<br>~~feee~~<br>~~OG~~|



Notes  through  are on page 11 

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**Diode Characteristics** 

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Notes  through  are on page 11 

 Surface mounted on 1 in.  Mounted to a PCB with square Cu board  (still air). small clip heatsink (still air) 

 Mounted on minimum footprint full size board with metalized back and with small 

clip heatsink (still air). 

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AUIRF7749L2TR<br>Oe<br>10000 10000<br>VGS VGSGS<br>TOP           15V TOP           15V<br>10V 10V<br>8.0V 8.0V<br>1000 7.0V 7.0V<br>A 6.0V5.5V5.5V 1000 6.0V 5.5V a<br>5.0V 5.0V<br>BOTTOM 4.5V BOTTOM 4.5V<br>100<br>Zeit 7 !<br>100<br>4.5V<br>10 4.5V<br>A fe<br> 60µs PULSE WIDTH 60µs PULSE WIDTH  60µs PULSE WIDTH 60µs PULSE WIDTHµs PULSE WIDTHs PULSE WIDTH<br>Tj = 25°C Tj = 175°C<br>1 snhethet 10 i<br>0.1 1 10 100 0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


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10000 10000<br>VGS VGSGS<br>TOP           15V TOP           15V<br>10V 10V<br>8.0V 8.0V<br>1000 7.0V 7.0V<br>6.0V<br>A 6.0V5.5V5.5V 1000 5.5V a<br>5.0V 5.0V<br>BOTTOM 4.5V BOTTOM 4.5V<br>100<br>Zeit 7 !<br>100<br>4.5V<br>10 4.5V<br>A fe<br> 60µs PULSE WIDTH 60µs PULSE WIDTH  60µs PULSE WIDTH 60µs PULSE WIDTHµs PULSE WIDTHs PULSE WIDTH<br>Tj = 25°C Tj = 175°C<br>1 snhethet 10 i<br>0.1 1 10 100 0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)<br>Fig. 1  Typical Output Characteristics  Fig. 2  Typical Output Characteristics<br>8.0 8<br>ID = 120A TJ  = 25°C<br>6.0 6 Vgs = 5.5V<br>Vgs = 6.0V<br>Vgs = 7.0V<br>Vgs = 8.0V<br>4.0 A 4 Vgs = 10V   NO<br>Vgs = 12V<br>TJ = 125°C<br>2.0 Co 2 a<br>BCeanean SSL<br>TJ = 25°C<br>0.0 0<br>4 finnessn 6 8 10 12 14 16 18 20 0 TT 40 80 120 TT 160 200<br>VGS, Gate -to -Source Voltage  (V) ID, Drain Current (A)<br>)<br><br>Typical RDS(on) ( m<br>)<br> <br>RDS(on),  Drain-to -Source On Resistance (m<br>ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig. 3** Typical On-Resistance vs. Gate Voltage 

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10000<br>VDS = 25V<br> 60µs PULSE WIDTH<br>1000<br>100 ee<br>AZ TJ = 25°C<br>10 TJ = 175 ° C<br>1 |<br>0.1 fflf<br>2.0 3.0 4.0 5.0 6.0 7.0<br>VGS, Gate-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig. 4** Typical On-Resistance vs. Drain Current 

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2.0<br>ID = 120A<br>1.8 V GS  = 10V<br>1.6<br>TOO<br>1.4<br>/ PEELE<br>1.2<br>1.0<br>Coote<br>0.8<br>HR C ee Cee<br>EE<br>0.6<br>-60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>TJ , Junction Temperature (°C)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>**----- End of picture text -----**<br>


**Fig 5.** Transfer Characteristics 

**Fig 6.** Normalized On-Resistance vs. Temperature 

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AUIRF7749L2TR<br>eonon LLL<br>4.5 10000<br>4.0 ELULLLLL<br>1000<br>3.5 TJ = 175°C<br>COPDSACE 100 ES<br>3.0<br>TJ = 25°C<br>E ID SSR  = 250µA RERANG aT 10 sene<br>2.5<br>ID = 1.0mA<br>2.0 eR ID = 1.0A 1 Af<br>VGS = 0V<br>1.5 TL ELELLNS 0.1 ff<br>-75 -50 -25 0 25 50 75 100 125 150 175 0.2 0.4 0.6 0.8 1.0 1.2 1.4<br>TJ , Temperature ( °C ) VSD, Source-to-Drain Voltage (V)<br>Fig. 7  Typical Threshold Voltage vs.  Fig 8.   Typical Source-Drain Diode Forward Voltage<br>Junction Temperature<br>320 100000<br>VGS   = 0V,       f = 1 MHZ<br>Ciss    = C gs + Cgd,  C ds SHORTED<br>TJ = 25°C C rss    = C gd<br>240 Coss   = Cds + Cgd<br>10000 C iss<br>Coss<br>TJ = 175°C<br>160<br>Crss<br>em 1000 Sua<br>80 ATT TT Tit lis<br>W<br>VDS = 5.0V<br>380µs PULSE WIDTH<br>0 fo 100 BUi,<br>0 20 40 60 80 100 120 140 160 180 0.1 1 10 100<br>ID, Drain-to-Source Current (A) VDS, Drain-to-Source Voltage (V)<br>ISD, Reverse Drain Current (A)<br>C, Capacitance (pF)<br>Gfs, Forward Transconductance (S)<br>VGS(th) Gate threshold Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 9.** Typical Forward Trans conductance vs. Drain Current 

**Fig 10.** Typical Capacitance vs. Drain-to-Source Voltage 

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16<br>I D = 120A<br>12 4 VDS= 48V Ze<br>VDS= 30V<br>VDS= 12V<br>8<br>YG<br>4<br>yo]<br>0 Ji<br>0 40 80 120 160 200 240<br> QG  Total Gate Charge (nC)<br>VGS, Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 11.** Typical Gate Charge vs. Gate-to-Source Voltage 

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350<br>300<br>Post ttt<br>250<br>200<br>150<br>SERRERSERSE<br>100<br>50 CRC<br>0 CoCeE ee<br>25 50 75 100 125 150 175<br>TC , CaseTemperature (°C)<br>ID  , Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 12.** Maximum Drain Current vs. Case Temperature 

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1000<br>100µsec<br>100<br>OPERATION IN THIS AREA  1msec<br>LIMITED BY R DS (on)<br>10<br>aan %<br>aN<br>10msec<br>1<br>Tc = 25°C a<br>Tj = 175°C DC<br>Single Pulse<br>0.1<br>0.1 1 10<br>VDS,  Drain-toSource Voltage (V)<br>ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


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1400<br>                 I D<br>1200<br>TOP          15A<br>                35A<br>1000 BOTTOM   120A<br>800<br>600 :<br>CNET<br>400<br>SOXEE<br>200<br>0<br>25 50 75 100 125 150 175<br>Starting TJ, Junction Temperature (°C)<br>EAS, Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


## **Fig 13.** Maximum Safe Operating Area 

**Fig 14.** Maximum Avalanche Energy vs. Temperature 

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1<br>TL Loo<br>D = 0.50 a<br>0.1 0.20<br>i 0.10 eerTTT EH<br>0.05<br>0.01 Sopraae 0.02 =a<br>0.01<br>SINGLE PULSE<br>0.001 ( THERMAL RESPONSE )<br>cee VTL EAT UU Notes:<br>1. Duty Factor D = t1/t2<br>2. Peak Tj = P dm x Zthjc + Tc<br>ali a<br>0.0001<br>1E-006 1E-005 0.0001 0.001 0.01 0.1<br>t1 , Rectangular Pulse Duration (sec)<br>Thermal Response ( Z thJC ) °C/W<br>**----- End of picture text -----**<br>


**Fig 15.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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1000<br>Allowed avalanche Current vs avalanche<br>pulsewidth, tav, assuming Tj = 150°C and<br>Tstart =25°C (Single Pulse)<br>100<br>i ety ete aT BTL<br>10<br>Allowed avalanche Current vs avalanche<br>pulsewidth, tav, assuming  j = 25°C and<br>Tstart = 150°C. (Single Pulse)<br>CSTAIT | TTT Liaise SL<br>1<br>1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01<br>tav (sec)<br>Avalanche Current (A)<br>**----- End of picture text -----**<br>


**Fig 16.** Typical Avalanche Current vs. Pulse Width 

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350<br>TOP          Single Pulse<br>300 Til BOTTOM   1.0% Duty Cycle |<br>ID = 120A<br>Na J<br>250<br>ANN EEE<br>200<br>PENNRAN EEE<br>150<br>LE ENNINN ELE<br>100<br>ENN<br>50 RN EEL<br>NH<br>BERREREASNNS<br>0<br>25 50 75 100 125 150 175<br>Starting TJ , Junction Temperature (°C)<br>EAR , Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Notes on Repetitive Avalanche Curves , Figures 16, 17: (For further info, see AN-1035 at www.infineon.com)** 

1. Avalanche failures assumption: 

   - Purely a thermal phenomenon and failure occurs at a temperature far in 

   - excess of Tjmax. This is validated for every part type. 

2. Safe operation in Avalanche is allowed as long as Tjmax is not exceeded. 

3.  Equation below based on circuit and waveforms shown in Figures 18a, 18b. 

4.  PD (ave) = Average power dissipation per single avalanche pulse. 

5.  BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 

6.  Iav = Allowable avalanche current. 

7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 16, 17). 

   - tav = Average time in avalanche. 

   - D = Duty cycle in avalanche =  tav ·f 

   - ZthJC(D, tav) = Transient thermal resistance, see Figures 15) 

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PD (ave) = 1/2 ( 1.3·BV·Iav) =   T/ ZthJC<br>Iav = 2  T/ [1.3·BV·Zth]<br>EAS (AR) = PD (ave)·tav<br>**----- End of picture text -----**<br>


**Fig 17.** Maximum Avalanche Energy vs. Temperature 

**Fig 18a.** Unclamped Inductive Test Circuit 

**Fig 18b.** Unclamped Inductive Waveforms 

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VDD<br>:<br>**----- End of picture text -----**<br>


**Fig 19a.** Gate Charge Test Circuit 

**Fig 19b.** Gate Charge Waveform 

**Fig 20a.** Switching Time Test Circuit 

**Fig 20b.** Switching Time Waveforms 

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AUIRF7749L2TR ~~Ld~~ 

## **DirectFET[™] Board Footprint, L8 Outline** 

## **(Large Size Can, 8-Source Pads)** 

Please see DirectFET™ application note AN-1035 for all details regarding the assembly of DirectFET™. This includes all recommendations for stencil and  substrate designs. 

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G = GATE<br>D = DRAIN<br>S = SOURCE<br>D D<br>S S<br>i]<br>A S S<br>D G D A<br>! S S<br>S S<br>D D<br>**----- End of picture text -----**<br>


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AUIRF7749L2TR ~~Ld~~ 

## **DirectFET™ Outline Dimension, L8 Outline (Large Size Can, 8-Source Pads)** 

Please see DirectFET™ application note AN-1035 for all details regarding the assembly of DirectFET™. This includes all recommendations for stencil and  substrate designs. 

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DIMENSIONS<br>METRIC IMPERIAL<br>CODE MIN MAX MIN MAX<br>A 9.05 9.15 0.356 0.360<br>B 6.85 7.10 0.270 0.280<br>C 5.90 6.00 0.232 0.236<br>D 0.55 0.65 0.022 0.026<br>E 0.58 0.62 0.023 0.024<br>F 1.18 1.22 0.046 0.048<br>G 0.98 1.02 0.039 0.040<br>H 0.73 0.77 0.029 0.030<br>J 0.38 0.42 0.015 0.017<br>K 1.35 1.45 0.053 0.057<br>L 2.55 2.65 0.100 0.104<br>L1 5.35 5.45 0.211 0.215<br>M 0.68 0.74 0.027 0.029<br>P 0.09 0.17 0.003 0.007<br>R 0.02 0.08 0.001 0.003<br>**----- End of picture text -----**<br>


Dimensions are shown in millimeters (inches) 

## **DirectFET™ Part Marking** 

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"AU" = GATE AND<br>AUTOMOTIVE MARKING<br>aa LOGO<br>— PART NUMBER<br>—- BATCH NUMBER<br>**----- End of picture text -----**<br>


## DATE CODE 

Line above the last character of the date code indicates "Lead-Free" 

9 

2016-10-11 

~~Cinfineon~~ 

AUIRF7749L2TR ~~CD~~ 

## **DirectFET™ Tape & Reel Dimension (Showing component orientation)** 

NOTE: Controlling dimensions in mm Std reel quantity is 4000 parts. (ordered as AUIRF7749L2TR). 

||**REEL DIMENSIONS**|**REEL DIMENSIONS**|**REEL DIMENSIONS**||
|---|---|---|---|---|
|STANDARD OPTION|||STANDARD OPTION**(QTY 4000)**||
||METRIC||IMPERIAL||
|CODE|MIN|MAX|MIN|MAX|
|A|330.00|N.C|12.992|N.C|
|B|20.20|N.C|0.795|N.C|
|C|12.80|13.20|0.504|0.520|
|D|1.50|N.C|0.059|N.C|
|E|99.00|100.00|3.900|3.940|
|F|N.C|22.40|N.C|0.880|
|G|16.40|18.40|0.650|0.720|
|H|15.90|19.40|0.630|0.760|



## LOADED TAPE FEED DIRECTION 

## DIMENSIONS 

NOTE: CONTROLLING DIMENSIONS IN MM 

|DIMENSIONS|DIMENSIONS|DIMENSIONS|DIMENSIONS|DIMENSIONS|
|---|---|---|---|---|
||METRIC||IMPERIAL||
|CODE|CODE<br>MIN|MAX|MIN|MAX|
|A|11.90|12.10|4.69|0.476|
|B|3.90|4.10|0.154|0.161|
|C|15.90|16.30|0.623|0.642|
|D|7.40|7.60|0.291|0.299|
|E|7.20|7.40|0.283|0.291|
|F|9.90|10.10|0.390|0.398|
|G|1.50|N.C|0.059|N.C|
|H|1.50|1.60|0.059|0.063|



10 

2016-10-11 

AUIRF7749L2TR ~~CD~~ 

AUIRF7749L2TR ~~Cinfineon CD~~ **Qualification Information** Automotive (per AEC-Q101) **Qualification Level** Comments:  This part number(s) passed Automotive qualification. Infineon’s Industrial and Consumer qualification level is granted by extension of the higher Automotive level. Moisture Sensitivity Level DirectFET2 L-CAN MSL1 Class M4 (+/- 800V)[† ] Machine Model AEC-Q101-002 **ESD** Class H2 (+/- 4000V)[† ] Human Body Model AEC-Q101-001 **RoHS Compliant** Yes ~~==~~ †    Highest passing voltage.  Click on this section to link to the appropriate technical  Limited by TJmax, Starting TJ = 25°C, L = 0.044mH, paper. RG = 50, IAS = 120A. 

-  Click on this section to link to the Direct FET™  Website. 

-  Surface mounted on 1 in. square Cu board, steady state. 

-  TC measured with thermocouple mounted to top (Drain) of part. 

-  Repetitive rating;  pulse width limited by max. junction temperature. 

-  Pulse width  400µs; duty cycle  2%. 

-  Used double sided cooling, mounting pad with large heat sink. 

-  Mounted on minimum footprint full size board with metalized back and with small clip heat sink. 

-  R is measured at TJ of approximately 90°C. 

11 2016-10-11 ~~ee~~ 

|infineon|infineon|infineon|infineon|infineon|
|---|---|---|---|---|
|<br>AUIRF7749L2TR<br>infineon<br>~~“eon~~<br>~~lc~~<br>~~Oe~~|||||
||**Revision History**||||
||**Date**||**Comments**||
||||Changed datasheet with “Infineon” logo –all pages.||
||10/11/2016||Corrected typo on Absolute Maximum Ratings table –from “VGS” to “VDS” on page 1.||
||||Added disclaimer on last page.||



**Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2015 All Rights Reserved.** 

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12 2016-10-11 ~~ee~~