AUIRF7675M2TR

AUIRF7675M2TR ~~a~~ 

**AUTOMOTIVE GRADE** 

## ~~Cinfin eon~~ 

## Automotive DirectFET[®] Power MOSFET  

- Advanced Process Technology 

|||Advanced Process Technology|Advanced Process Technology||||Automotive DirectFET|Automotive DirectFET|Automotive DirectFET|Automotive DirectFET|Automotive DirectFET|Automotive DirectFET|Automotive DirectFET|Automotive DirectFET|Automotive DirectFET|Automotive DirectFET|Automotive DirectFET|Automotive DirectFET|Automotive DirectFET|Automotive DirectFET|Automotive DirectFET|Automotive DirectFET|Automotive DirectFET|Automotive DirectFET|Automotive DirectFET|Automotive DirectFET[®]Power MOSFET |Automotive DirectFET[®]Power MOSFET |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|||Advanced Process Technology<br>Optimized for Class D Audio Amplifier Applications||Optimized for Class D Audio Amplifier Applications|||**V(BR)DSS**|||||||||||||||||||**150V**||
|||Low Rds(on) for Improved Efficiency|||||**RDS(on)   typ.**|||||||**typ.**|**typ.**|||||||||||**47m**||
|||Low Qg for Better THD and Improved Efficiency||||||||||||**max.**||||||||||||**56m**||
||<br>|Low Qrr for Better THD and Lower EMI <br>Low Parasitic Inductance for Reduced Ringing and Lower EMI|||||**Rg (typical)**|||||||||||||||||||**1.2**||
|||Delivers up to 250W per Channel into 4with No Heat sink|||with No Heat sink||**Qg (typical)**|||||||||||||||||||**21nC**||
|||Dual Sided Cooling||||||||||||||||||||||||||
||<br><br>|175°C Operating Temperature<br>Repetitive Avalanche Capability for Robustness and Reliability<br>Lead free, RoHS and Halogen free|||||||||||||||S|||||||||||
|||Automotive Qualified *||||||D||||||G|||S|||||D||||||
|||||||||||||||||||||||||||||
||Applicable DirectFET®Outline and  Substrate Outline|||||||||||||||M2||||||||DirectFET® ISOMETRIC||||
|**SB**<br>**SC**<br>**M2**<br>~~[|]~~<br>~~J~~<br>~~[|~~<br>~~Qa~~||||**M4**|~~TT~~|||||||||||**L4**||||||||**L6**||**L8**||



## **Description** 

The AUIRF7675M2TR/TR1 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET packaging platform to produce a best in class part for Automotive Class D audio amplifier applications. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in automotive power systems. 

This HEXFET Power MOSFET optimizes gate charge, body diode reverse recovery and internal gate resistance to improve key Class D audio amplifier performance factors such as efficiency, THD and EMI. Moreover the DirectFET packaging platform offers low parasitic inductance and resistance when compared to conventional wire bonded SOIC packages which improves EMI performance by reducing the voltage ringing that accompanies current transients. 

These features combine to make this MOSFET a highly desirable component in Automotive Class D audio amplifier systems. 

|**Base Part Number**|**Package Type**|**Standard Pack**|**Standard Pack**|**Orderable Part Number**|
|---|---|---|---|---|
|||**Form**|**Quantity**||
|AUIRF7675M2|DirectFET Medium Can|Tape and Reel|4800|AUIRF7675M2TR|



## **Absolute Maximum Ratings** 

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.   These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolutemaximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified. 

|~~QO~~|**Parameter**<br>~~QO~~|**Max.**<br>~~QO~~|**Units**<br>~~QO~~|
|---|---|---|---|
|VDS<br>~~er~~|Drain-to-Source Voltage<br>~~er~~|150<br>~~er~~|V<br>~~er~~|
|VGS<br>~~er~~|Gate-to-Source Voltage<br>~~er~~|±20<br>~~er~~||
|ID @TC= 25°C<br>~~es~~|Continuous Drain Current,VGS @10V(Silicon Limited) <br>~~es~~|18<br>~~es~~|A<br>~~——————~~|
|ID @TC= 100°C<br>~~es~~|Continuous Drain Current,VGS @10V(Silicon Limited) <br>~~es~~|13<br>~~es~~||
|ID @TA= 25°C<br>~~es~~|Continuous Drain Current,VGS @10V(Silicon Limited) <br>~~es~~|4.4<br>~~es~~||
|ID @TC= 25°C<br>~~es~~|Continuous Drain Current,VGS @10V(Package Limited)<br>~~es~~|90<br>~~es~~||
|IDM<br>~~——————~~|Pulsed Drain Current<br>~~——————~~|72<br>~~——————~~||
|PD @TC= 25°C<br>~~——————~~|Power Dissipation<br>~~——————~~|45<br>~~——————~~|W<br>~~——————~~<br>~~———~~|
|PD @TA= 25°C<br>~~——————~~<br>~~———~~|Power Dissipation<br>~~——————~~<br>~~———~~|2.7<br>~~——————~~<br>~~———~~||
|EAS<br>~~———~~<br>~~ae~~<br>~~es~~|Single Pulse Avalanche Energy (ThermallyLimited) <br>~~———~~|59<br>~~———~~<br>~~a~~|mJ<br>~~———~~|
|EAS(Tested)<br>~~———~~<br>~~ae~~<br>~~es~~|Single Pulse Avalanche Energy <br>~~———~~|170<br>~~———~~<br>~~a~~||
|IAR<br>~~———~~<br>~~ae~~<br>~~——_———————————————~~<br>~~es~~|Avalanche Current<br>~~———~~<br>~~——_———————————————~~|See Fig. 16, 17, 18a, 18b<br>~~———~~<br>~~——_———————————————~~<br>~~a~~|A<br>~~———~~<br>~~——_———————————————~~|
|EAR<br>~~——_———————————————~~<br>~~es~~|Repetitive Avalanche Energy <br>~~——_———————————————~~||mJ<br>~~——_———————————————~~|
|TP<br>~~es~~|Peak SolderingTemperature|270<br>~~a~~|°C|
|TJ<br>TSTG<br>~~es~~<br>~~a~~|Operating Junction and<br>Storage Temperature Range|-55  to + 175<br>~~a~~||



HEXFET® is a registered trademark of Infineon. 

***** Qualification standards can be found at www.infineon.com 

1 

2015-12-14 

AUIRF7675M2TR ~~LLL~~ 

## ~~Cinfin eon~~ 

## **Thermal Resistance** 

|**Symbol**|**Parameter**|**Typ. **|**Max.**|**Units**|
|---|---|---|---|---|
|RJA|Junction-to-Ambient|–––|60|°C/W|
|RJA|Junction-to-Ambient|12.5|–––||
|RJA|Junction-to-Ambient|20|–––||
|RJ-Can|Junction-to-Can|–––|3.3||
|RJ-PCB|Junction-to-PCB Mounted|1.4|–––||
||Linear DeratingFactor|0.3||W/°C|



**Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

|**Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)@ TJ = 25°C (unless otherwise specified) TJ = 25°C (unless otherwise specified)J = 25°C (unless otherwise specified) = 25°C (unless otherwise specified)(unless otherwise specified)unless otherwise specified)pecified)ecified)) **||
|---|---|
|**Symbol**<br>**Parameter**<br>**Min.**<br>**Typ. Max. Units**<br>**Conditions**<br>V(BR)DSS<br>Drain-to-Source Breakdown Voltage<br>150<br>–––<br>–––<br>V<br>VGS= 0V, ID= 250µA<br>~~a~~||
|V(BR)DSS/TJBreakdown Voltage Temp. Coefficient<br>–––<br>0.16<br>–––<br>V/°C Reference to 25°C, ID= 1.0mA<br>RDS(on) <br>Static Drain-to-Source On-Resistance<br>–––<br>47<br>56<br>m VGS= 10V, ID= 11A<br>VGS(th)<br>Gate Threshold Voltage<br>3.0<br>4.0<br>5.0<br>V<br>VDS= VGS, ID= 100µA<br>VGS(th)/TJ<br>Gate Threshold Voltage Coefficient<br>–––<br>-11<br>––– mV/°C<br>gfs<br>Forward Transconductance<br>16<br>–––<br>–––<br>S<br>VDS= 50V, ID= 11A<br>RG<br>Internal Gate Resistance<br>–––<br>1.2<br>5.0<br><br>~~ee~~<br>~~ee~~<br>~~eee~~<br>~~a~~||
|IDSS<br>Drain-to-Source Leakage Current<br>–––<br>–––<br>20<br>µA<br>VDS= 150V, VGS= 0V<br>–––<br>–––<br>250<br>VDS= 150V, VGS= 0V, TJ= 125°C<br>~~a~~||
|IGSS<br>Gate-to-Source Forward Leakage<br>–––<br>–––<br>100<br>nA<br>VGS= 20V<br>Gate-to-Source Reverse Leakage<br>–––<br>–––<br>-100<br>VGS= -20V<br>~~EE~~||
|**Dynamic Electrical Characteristics@ TJ = 25°C(unless otherwise specified) **||
|**Symbol**<br>**Parameter**<br>**Min.**<br>**Typ. Max. Units**<br>**Conditions**<br>Qg<br>Total Gate Charge<br>–––<br>21<br>32<br>nC<br>VDS= 75V<br>Qgs1<br>Gate-to-Source Charge<br>–––<br>5.2<br>–––<br>VGS= 10V<br>Qgs2<br>Gate-to-Source Charge<br>–––<br>1.6<br>–––<br>ID= 11A<br>Qgd<br>Gate-to-Drain("Miller")Charge<br>–––<br>7.1<br>–––<br>See Fig. 6 and 17<br>Qgodr<br>Gate Charge Overdrive<br>–––<br>7.1<br>–––<br>Qsw<br>Switch Charge(Qgs2+ Qgd)<br>–––<br>8.7<br>–––<br>Qoss<br>Output Charge<br>–––<br>8.8<br>–––<br>nC<br>VDS= 16V, VGS= 0V<br>td(on)<br>Turn-On DelayTime<br>–––<br>10<br>–––<br>ns<br>VDD= 75V, VGS= 10V<br>tr<br>Rise Time<br>–––<br>13<br>–––<br>ID= 11A<br>td(off)<br>Turn-Off DelayTime<br>–––<br>14<br>–––<br>RG= 6.8<br>tf<br>Fall Time<br>–––<br>7.5<br>–––<br>Ciss<br>Input Capacitance<br>–––<br>1360<br>–––<br>pF<br>VGS= 0V<br>Coss<br>Output Capacitance<br>–––<br>190<br>–––<br>VDS= 25V<br>Crss<br>Reverse Transfer Capacitance<br>–––<br>41<br>–––<br>ƒ= 1.0 MHz<br>Coss<br>Output Capacitance<br>–––<br>1210<br>–––<br>VGS= 0V, VDS= 1.0V, ƒ = 1.0 MHz<br>Coss<br>Output Capacitance<br>–––<br>92<br>–––<br>VGS= 0V, VDS=120V,ƒ= 1.0MHz<br>~~ee~~<br>~~ts I I (OR  (~~<br>~~ee~~<br>~~Gt~~<br>~~—~~<br>~~a~~<br>~~——————————~~<br>~~a~~<br>~~—————~~<br>~~esen~~<br>~~——————~~<br>~~Se~~<br>~~a~~||
|Notesthroughare on page 3||
|2<br>2015-12-14<br>~~re~~||



|<br>AUIRF7675M2TR<br>~~eesor~~|<br>AUIRF7675M2TR<br>~~eesor~~|<br>AUIRF7675M2TR<br>~~eesor~~|<br>AUIRF7675M2TR<br>~~eesor~~|<br>AUIRF7675M2TR<br>~~eesor~~|<br>AUIRF7675M2TR<br>~~eesor~~|<br>AUIRF7675M2TR<br>~~eesor~~|<br>AUIRF7675M2TR<br>~~eesor~~|
|---|---|---|---|---|---|---|---|
|**Diode Characteristics**||||||||
|**Symbol**<br>~~a~~|**Parameter**|**Min.**|**Typ. Max. Units**|**. Max. Units**|**. Max. Units**|**Conditions**|**Conditions**|
|IS<br>ISM|Continuous Source Current<br>(BodyDiode)<br>Pulsed Source Current<br>(BodyDiode) |–––   –––<br>–––   –––|–––   –––<br>–––   –––|18<br>72|A|MOSFET symbol<br>showing  the<br>integral reverse<br>p-njunction diode.|D<br>S<br>G|
|VSD|Diode Forward Voltage|–––|–––|1.3|V|TJ= 25°C,IS= 11A,VGS= 0V|= 0V|
|trr|Reverse RecoveryTime|–––|63|95|ns|TJ= 25°C, IF= 11A, VDD= 25V|= 25V|
|Qrr|Reverse RecoveryCharge|–––|180|270|nC|dv/dt = 100A/µs||



-  Surface mounted on 1 in. square Cu board  (still air). 

 Mounted to a PCB with small clip heatsink (still air) 

 Mounted on minimum footprint full size board with metalized back and with small clip heatsink (still air). 

-  Click on this section to link to the appropriate technical paper. 

-  Click on this section to link to the DirectFET[®] Website. 

-  Surface mounted on 1 in. square Cu board, steady state. 

-  TC measured with thermocouple mounted to top (Drain) of part. 

-  Repetitive rating;  pulse width limited by max. junction temperature. 

-  Starting TJ = 25°C, L = 1.33mH, RG = 50, IAS = 11A. 

-  Pulse width  400µs; duty cycle  2%. 

-  Used double sided cooling, mounting pad with large heatsink. 

-  Mounted on minimum footprint full size board with metalized back and with small clip heat sink. 

-  R is measured at TJ of approximately 90°C. 

3 2015-12-14 ~~me~~ 

AUIRF7675M2TR 

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100 100<br>VGS VGS<br>TOP           15V TOP           15V<br>10V 10V<br>8.0V 8.0V<br>7.0V 7.0V<br>6.5V 6.5V<br>10 6.0V 10 6.0V<br>5.5V 5.5V<br>BOTTOM 5.0V BOTTOM 5.0V<br>5.0V<br>1 1<br>5.0V<br>ct at al pal<br> 60µs PULSE WIDTH  60µs PULSE WIDTH<br>Tj = 25°C Tj = 175°C<br>0.1 ari a 0.1 Al<br>0.1 1 10 100 0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)<br>Fig. 1  Typical Output Characteristics  Fig. 2  Typical Output Characteristics<br>140 200<br>ID = 11A Vgs = 10V<br>120<br>160 T J  = 125°C<br>100<br>oh TJ = 125°C |  A 120<br>80<br>TJ = 25°C<br>80<br>60<br>WA TJ = 25°C EERE<br>40 hoeeeee 40 ppty<br>6 8 10 12 14 16 18 20 0 10 20 30 40 50 60<br>VGS, Gate -to -Source Voltage  (V) ID, Drain Current (A)<br>Fig. 3  Typical On-Resistance vs. Gate Voltage Fig. 4  Typical On-Resistance vs. Drain Current<br>100 3.0<br>ID = 11A<br>VGS = 10V<br>2.5<br>10<br>| | La 2.0 aly<br>1 TJ = -40°C<br>TJ = 25°C 1.5<br>TJ = 175°C<br>0.1<br>| 1.0 MW<br>VDS = 50V<br>60µs PULSE WIDTH<br>0.01 tT 0.5<br>)<br>m<br>RDS(on),  Drain-to -Source On Resistance (<br>ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A)<br>ID, Drain-to-Source Current (A)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>) <br>RDS(on),  Drain-to -Source On Resistance (m<br>**----- End of picture text -----**<br>


**Fig. 4** Typical On-Resistance vs. Drain Current 

**Fig. 3** Typical On-Resistance vs. Gate Voltage 

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3 4 5 6 7 8 9<br>VGS, Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 5.** Transfer Characteristics 

**Fig 6.** Normalized On-Resistance vs. Temperature 

-60 -40 -20 0 20 40 60 80 100 120 140160 180 TJ , Junction Temperature (°C) 

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5.5<br>4.5<br>3.5 I D  = 100µA<br>ID = 250µA<br>ID = 1.0mA<br>2.5 Ina I D  = 1.0A<br>TEETER<br>1.5<br>-75 -50 -25 0 25 50 75 100 125 150 175<br>TJ , Temperature ( °C )<br>VGS(th), Gate threshold Voltage (V)<br>**----- End of picture text -----**<br>


**Fig. 7** Typical Threshold Voltage vs. Junction Temperature 

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50<br>TJ = 25°C<br>40<br>===<br>30 TJ = 175 ° C<br>ae 20<br>10 “ae<br>VDS = 10V<br>380µs PULSE WIDTH<br>0 P|)<br>0 4 8 12 16 20 24<br>ID,Drain-to-Source Current (A)<br>14<br>ID= 11A VDS= 120V<br>12 V DS = 75V<br>Tt VDS= 30V ey<br>10<br>8<br>6<br>YA<br>4<br>|i | tt<br>2<br>A | | | dt<br>0 2<br>0 4 8 12 16 20 24 28<br> QG,  Total Gate Charge (nC)<br>Fig 11.   Typical Gate Charge vs.<br> Gate-to-Source Voltage<br>Gfs , Forward Transconductance (S)<br>VGS, Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 9.** Typical Forward Trans conductance vs. Drain Current 

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100<br>TJ = -40°C<br>TJ = 25°C<br>TJ = 175°C<br>10<br>1<br>ff<br>V GS  = 0V<br>0.1 ani<br>0.2 0.4 0.6 0.8 1.0<br>VSD, Source-to-Drain Voltage (V)<br>Fig 8.   Typical Source-Drain Diode Forward Voltage<br>100000<br>VGS   = 0V,       f = 1 MHZ<br>Ciss    = C gs  + Cgd,  C ds  SHORTED<br>C rss    = C gd<br>10000 fo C oss   = C ds  + C gd<br>Ciss<br>1000<br>Co Coss<br>100<br>Crss<br>10 TP<br>1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 10.   Typical Capacitance vs. Drain-to-Source Voltage<br>20<br>16<br>me |<br>12<br>8 ELTA<br>4 EaaraN<br>\<br>0 PTT Tt<br>25 50 75 100 125 150 175<br> TC , Case Temperature (°C)<br>ID,  Drain Current (A)<br>C, Capacitance (pF)<br>ISD, Reverse Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 8.** Typical Source-Drain Diode Forward Voltage 

**Fig 10.** Typical Capacitance vs. Drain-to-Source Voltage 

**Fig 12.** Maximum Drain Current vs. Case Temperature 

5 2015-12-14 ~~ET~~ 

AUIRF7675M2TR ~~|~~ 

## ~~Cinfineon~~ 

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1000 250<br>OPERATION IN THIS AREA  ID<br>LIMITED BY RDS(on) TOP           2.2A<br>200   4.5A<br>100 BOTTOM   11A<br>150<br>10 1 00 µsec<br>rant 1msec 100 NEN OEE<br>.'<br>1<br>TT Tc = 25°C 10msec 50 JINN<br>Tj = 175°C ‘ak<br>Saal ae<br>Single Pulse DC<br>0.1 Pei 0 CTaSsSNU<br>0.1 1 10 100 1000 25 50 75 100 125 150 175<br>VDS  , Drain-toSource Voltage (V) Starting TJ , Junction Temperature (°C)<br>EAS , Single Pulse Avalanche Energy (mJ)<br>ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 13.** Maximum Safe Operating Area 

**Fig 14.** Maximum Avalanche Energy vs. Temperature 

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10<br>D = 0.50<br>1<br>ee 0.20 emil<br>0.10<br>nesseee 0.05 R 1 R1 R 2 R2 R 3 R3 | R 4R4 all Ri (°C/W) |   Ul i (sec)<br>0.1 ae 0.020.01 J J1 1 5 2 2 PR  3 3  4 4 CC Pap 1.381063 1.312033 0.104573  0.007407 0.039921 2.1E-05<br>Ci= iRi<br>0.01 rape SINGLE PULSE Ci=  re iRi ee 0.501388  0.000741<br>( THERMAL RESPONSE ) Notes:<br>1. Duty Factor D = t1/t2<br>2. Peak Tj = P dm x Zthjc + Tc<br>0.001<br>1E-006 1E-005 0.0001 0.001 0.01 0.1<br>t1 , Rectangular Pulse Duration (sec)<br>Fig 15.   Maximum Effective Transient Thermal Impedance, Junction-to-Case<br>100<br>Allowed avalanche Current vs avalanche<br>Duty Cycle = Single Pulse<br>pulsewidth, tav, assuming  Tj = 150°C and<br>Tstart =25°C (Single Pulse)<br>iii | rrr<br>10<br>0.01<br>1 Bniitisee 0.05<br>ars 0.10 ia cecal atl<br>0.1 TTTZAVAT ae=~.<br>Allowed avalanche Current vs avalanche<br>pulsewidth, tav, assuming  j = 25°C and<br>Tstart = 150°C.<br>0.01 TET<br>1.0E-06 Leerssen! 1.0E-05 1.0E-04 [LLIN] Ti 1.0E-03 1.0E-02 OTT 1.0E-01<br>tav (sec)<br>Thermal Response ( Z thJC ) °C/W<br>Avalanche Current (A)<br>**----- End of picture text -----**<br>


**Fig 16.** Typical Avalanche Current vs. Pulse Width 

6 

2015-12-14 

AUIRF7675M2TR ~~|~~ 

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Cinfineon<br>**----- End of picture text -----**<br>


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60<br>TOP          Single Pulse<br>BOTTOM   1% Duty Cycle<br>50 I D  = 11A<br>40<br>30 N NEEL EEL<br>20 NERS<br>10 ELAN IN NEEL aN<br>0 SLX.<br>25 50 75 100 125 150 175<br>Starting TJ , Junction Temperature (°C)<br>EAR , Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


## **Notes on Repetitive Avalanche Curves , Figures 16, 17:** 

**(For further info, see AN-1005 at www.infineon.com)** 

1. Avalanche failures assumption: 

   - Purely a thermal phenomenon and failure occurs at a temperature far in 

   - excess of Tjmax. This is validated for every part type. 

2. Safe operation in Avalanche is allowed as long as Tjmax is not exceeded. 

3.  Equation below based on circuit and waveforms shown in Figures 18a, 18b. 

4.  PD (ave) = Average power dissipation per single avalanche pulse. 

5.  BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 

6.  Iav = Allowable avalanche current. 

7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 16, 17). 

   - tav = Average time in avalanche. 

   - D = Duty cycle in avalanche =  tav ·f 

   - ZthJC(D, tav) = Transient thermal resistance, see Figures 15) 

## **PD (ave) = 1/2 ( 1.3·BV·Iav) =**  **T/ ZthJC Iav = 2**  **T/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav** 

**Fig 17.** Maximum Avalanche Energy vs. Temperature 

**Fig 18a.** Unclamped Inductive Test Circuit 

**Fig 18b.** Unclamped Inductive Waveforms 

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VDD<br>**----- End of picture text -----**<br>


**Fig 19a.** Gate Charge Test Circuit 

**Fig 19b.** Gate Charge Waveform 

**Fig 20a.** Switching Time Test Circuit 

**Fig 20b.** Switching Time Waveforms 

2015-12-14 

7 

~~Cinfineon~~ 

AUIRF7675M2TR ~~LLL~~ 

## **DirectFET[®] Board Footprint, M2 (Medium Size Can).** 

Please see DirectFET **[®]** application note AN-1035 for all details regarding the assembly of DirectFET **[®]** . This includes all recommendations for stencil and  substrate designs. 

**==> picture [399 x 189] intentionally omitted <==**

**----- Start of picture text -----**<br>
G = GATE<br>D = DRAIN<br>S = SOURCE<br>4<br>D D<br>A<br>S<br>!<br>i<br>G<br>|<br>S<br>D D<br>**----- End of picture text -----**<br>


Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 

8 

2015-12-14 

Cinfineon 

AUIRF7675M2TR 

## **DirectFET[®] Outline Dimension, M2 Outline (Medium Size Can).** 

Please see DirectFET **[®]** application note AN-1035 for all details regarding the assembly of DirectFET **[®]** . This includes all recommendations for stencil and  substrate designs. 

|DIMENSIONS|DIMENSIONS|DIMENSIONS|DIMENSIONS|DIMENSIONS|
|---|---|---|---|---|
|METRIC<br>IMPERIAL<br>DIMENSIONS|||||
|CODE|MIN|MAX|MIN|MAX|
|A<br>B|6.25<br>4.80|6.35<br>5.05|0.189<br>0.246|0.250<br>0.199|
|B<br>C|3.85<br>4.80|3.95<br>5.05|0.152<br>0.189|0.156<br>0.199|
|D|0.35|0.45|0.014|0.018|
|E|0.58|0.62|0.023|0.024|
|F|0.78|0.82|0.031|0.032|
|G|0.78|0.82|0.031|0.032|
|H|0.78|0.82|0.031|0.032|
|I|N/A|N/A|N/A|N/A|
|J|0.38|0.42|0.015|0.017|
|K<br>L|1.10<br>2.30|1.20<br>2.40|0.090<br>0.043|0.047<br>0.094|
|L<br>M|2.30<br>0.68|2.40<br>0.74|0.090<br>0.027|0.094<br>0.029|
|R<br>P|0.02<br>0.09|0.08<br>0.17|0.001<br>0.003|0.003<br>0.007|



## **DirectFET[® ] Part Marking** 

**==> picture [230 x 159] intentionally omitted <==**

**----- Start of picture text -----**<br>
"AU" = GATE AND<br>AUTOMOTIVE MARKING<br>4 a LOGO<br>— PART NUMBER<br>—, BATCH NUMBER<br>—<br>DATE CODE<br>Line above the last character of<br>the date code indicates "Lead-Free"<br>**----- End of picture text -----**<br>


Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 

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~~Cinfineon~~ 

AUIRF7675M2TR ~~LLL~~ 

## **DirectFET[® ] Tape &** 

## **Reel Di-** 

**==> picture [231 x 184] intentionally omitted <==**

**----- Start of picture text -----**<br>
F D<br>A<br>|<br>|<br>!<br>G<br>H<br>C B<br>E A<br>**----- End of picture text -----**<br>


NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts, order as AUIRF7675M2TR. 

|**REEL DIMENSIONS**<br>MAX<br>N.C<br>N.C<br>0.520<br>N.C<br>N.C<br>0.724<br>0.567<br>0.606<br>IMPERIAL<br>MIN<br>330.0<br>20.2<br>12.8<br>1.5<br>100.0<br>N.C<br>12.4<br>11.9<br>STANDARD OPTION**(QTY 4800)**<br>CODE<br>A<br>B<br>C<br>D<br>E<br>F<br>G<br>H<br>MAX<br>N.C<br>N.C<br>13.2<br>N.C<br>N.C<br>18.4<br>14.4<br>15.4<br>MIN<br>12.992<br>0.795<br>0.504<br>0.059<br>3.937<br>N.C<br>0.488<br>0.469<br>METRIC|**REEL DIMENSIONS**<br>MAX<br>N.C<br>N.C<br>0.520<br>N.C<br>N.C<br>0.724<br>0.567<br>0.606<br>IMPERIAL<br>MIN<br>330.0<br>20.2<br>12.8<br>1.5<br>100.0<br>N.C<br>12.4<br>11.9<br>STANDARD OPTION**(QTY 4800)**<br>CODE<br>A<br>B<br>C<br>D<br>E<br>F<br>G<br>H<br>MAX<br>N.C<br>N.C<br>13.2<br>N.C<br>N.C<br>18.4<br>14.4<br>15.4<br>MIN<br>12.992<br>0.795<br>0.504<br>0.059<br>3.937<br>N.C<br>0.488<br>0.469<br>METRIC|**REEL DIMENSIONS**<br>MAX<br>N.C<br>N.C<br>0.520<br>N.C<br>N.C<br>0.724<br>0.567<br>0.606<br>IMPERIAL<br>MIN<br>330.0<br>20.2<br>12.8<br>1.5<br>100.0<br>N.C<br>12.4<br>11.9<br>STANDARD OPTION**(QTY 4800)**<br>CODE<br>A<br>B<br>C<br>D<br>E<br>F<br>G<br>H<br>MAX<br>N.C<br>N.C<br>13.2<br>N.C<br>N.C<br>18.4<br>14.4<br>15.4<br>MIN<br>12.992<br>0.795<br>0.504<br>0.059<br>3.937<br>N.C<br>0.488<br>0.469<br>METRIC|**REEL DIMENSIONS**<br>MAX<br>N.C<br>N.C<br>0.520<br>N.C<br>N.C<br>0.724<br>0.567<br>0.606<br>IMPERIAL<br>MIN<br>330.0<br>20.2<br>12.8<br>1.5<br>100.0<br>N.C<br>12.4<br>11.9<br>STANDARD OPTION**(QTY 4800)**<br>CODE<br>A<br>B<br>C<br>D<br>E<br>F<br>G<br>H<br>MAX<br>N.C<br>N.C<br>13.2<br>N.C<br>N.C<br>18.4<br>14.4<br>15.4<br>MIN<br>12.992<br>0.795<br>0.504<br>0.059<br>3.937<br>N.C<br>0.488<br>0.469<br>METRIC|
|---|---|---|---|
||330.0|N.C<br>12.992|N.C<br>12.992|
||20.2|N.C<br>0.795|N.C<br>0.795|
||12.8|13.2<br>0.504|0.520<br>0.504|
||1.5|N.C<br>0.059|N.C<br>0.059|
||100.0|N.C<br>3.937|N.C<br>3.937|
||N.C|18.4<br>N.C|0.724|
||12.4|14.4<br>0.488|0.567<br>0.488|
||11.9|15.4<br>0.469|0.606<br>0.469|



Loaded Tape Feed Direction 

|||||||U|||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
||||||||||||||||||||||||
||||||||||||||||||||||||
||||||||||||||||||||||||
||||||||||||||||||||||||
||||||||||||||||||||||||
||||||||||||||||DIMENSIONS||||||||
|NOTE: CONTROLLING||||||||||||||METRIC|||||IMPERIAL||||
|DIMENSIONS IN MM|||||DIMENSIONS IN MM|||||CODE|||MIN|||MAX|||MIN|||MAX|
|||||||||||A|||7.90|||8.10|||0.311|||0.319|
|||||||||||B|||3.90|||4.10|||0.154|||0.161|
|||||||||||C|||11.90|||12.30|||0.469|||0.484|
|||||||||||D|||5.45|||5.55|||0.215|||0.219|
|||||||||||E|||5.10|||5.30|||0.201|||0.209|
|||||||||||F|||6.50|||6.70|||0.256|||0.264|
|||||||||||G|||1.50|||N.C|||0.059|||N.C|
|||||||||||H|||1.50|||1.60|||0.059|||0.063|



Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 

10 

2015-12-14 

AUIRF7675M2TR ~~Cinfineon LLL~~ **Qualification Information** Automotive (per AEC-Q101) **Qualification Level** Comments: This part number(s) passed Automotive qualification. Infineon’s Industrial and Consumer qualification level is granted by extension of the higher Automotive level. **Moisture Sensitivity Level** DFET2 Medium Can MSL1, 260°C Class M4 (+/- 400V)[†] Machine Model AEC-Q101-002 Class H1B (+/- 1000V)[†  ] **ESD** Human Body Model AEC-Q101-001 Class C4 (+/- 1000V)[†  ] Charged Device Model AEC-Q101-005 **RoHS Compliant** Yes ~~——~~ †  Highest passing voltage. **Revision History Date Comments**  Updated datasheet with corporate template 12/14/2015  Corrected ordering table on page 1.  Updated Tape and Reel option on page 10 

**Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2015 All Rights Reserved.** 

## **IMPORTANT NOTICE** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office (www.infineon.com). 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 

11 

2015-12-14