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AUIRF7343QTR
Dual MOSFET, Complementary N and P Channel, 55 V, 55 V, 4.7 A, 4.7 A, 0.043 ohm
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- Manufacturer: INFINEON
- Product type: Dual MOSFETs
- Transistor Polarity:Dual N and P Channel; Continuous Drain Current Id:4.7A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.043ohm; Rds(on) T; Available until stocks are exhausted
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (27-Jun-2018)
- No. of Pins: 8Pins
- Channel Type: Complementary N and P Channel
- Product Range: HEXFET Series
- Qualification: AEC-Q101
- Transistor Case Style: SOIC
- Operating Temperature Max: 150°C
- Power Dissipation N Channel: 2W
- Power Dissipation P Channel: 2W
- Drain Source Voltage Vds N Channel: 55V
- Drain Source Voltage Vds P Channel: 55V
- Continuous Drain Current Id N Channel: 4.7A
- Continuous Drain Current Id P Channel: 4.7A
- Drain Source On State Resistance N Channel: 0.043ohm
- Drain Source On State Resistance P Channel: 0.043ohm
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 0.833 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
**AUTOMOTIVE GRADE**
## ~~Cinfin eon~~
## AUIRF7343Q ~~_——~~
## **Features**
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|||||||||||
|---|---|---|---|---|---|---|---|---|---|
|N-CHANNEL MOSFET|N-CH|P-CH|
| Advanced Planar Technology|S1|1|8|D1|
| Ultra Low On-Resistance|G1|2|7|D1|VDSS|55V|-55V|
| Logic Level Gate Drive|S2|3|6|D2|RDS(on) typ.|0.043||0.095||
| Dual N and P Channel MOSFET|
| Surface Mount|G2|P-CHANNEL MOSFET4|5|D2|max. 0.050ID|4.7A||0.105-3.4A||
| Available in Tape & Reel|
|Top View|
| 150°C Operating Temperature|
| Lead-Free, RoHS Compliant|
| Automotive Qualified *|
|Description|
|Specifically designed for Automotive applications, these HEXFET® Power|
|MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to|
|achieve extremely low on-resistance per silicon area. Additional features of|
|these Automotive qualified HEXFET Power MOSFET's are a 150°C junction|SO-8|
|AUIRF7343Q|
|operating temperature, fast switching speed and improved repetitive|
|avalanche rating. These benefits combine to make this design an extremely|
|efficient and reliable device for use in Automotive applications and a wide|
|G|D|S|
|variety of other applications.|
|The efficient SO-8 package provides enhanced thermal characteristics and|Gate|Drain|Source|
|a|
|dual MOSFET die capability making it ideal in a variety of power applications.|
|This dual, surface mount SO-8 can dramatically reduce board space and is|
|also available in Tape & Reel.|
|Standard Pack|
|Base part number|Package Type|Orderable Part Number|
|Form|Quantity|
|AUIRF7343Q|SO-8|Tape and Reel|4000|AUIRF7343QTR|
|———E——|re|
|Absolute Maximum Ratings|
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Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
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|---|---|---|---|---|---|---|
|Max.|
|Symbol|Parameter|N-Channel|P-Channel|Units|
|ee|VDS|Drain-Source Voltage|55|-55|V|
|ID|@ TA = 25°C|Continuous Drain Current, VGS|@ 10V|4.7|-3.4|
|ID|@ TA = 70°C|Continuous Drain Current, VGS|@ 10V|3.8|-2.7|A|
|IDM|Pulsed Drain Current |38|-27|
|PD|@TA = 25°C|Maximum Power Dissipation |2.0|
|W|
|PD @TA = 70°C|Maximum Power Dissipation |1.3|
|EAS|Single Pulse Avalanche Energy|(Thermally Limited)||72|114|mJ|
|——|es|ae|
|IAR|Avalanche Current|4.7|-3.4|A|
|EAR|Repetitive Avalanche Energy|0.20|mJ|
|VGS|Gate-to-Source Voltage|± 20|V|
|dv/dt|Peak Diode Recovery dv/dt |5.0|-5.0|V/ns|
|TJ|Operating Junction and|
|-55 to + 150|°C|
|SSS|TSTG|Storage Temperature Range|=|
|Thermal Resistance|
|Symbol|Parameter|Typ.|Max.|Units|
|RJA|Junction-to-Ambient ( PCB Mount, steady state) |–––|62.5|°C/W|
|a|
|HEXFET® is a registered trademark of Infineon.|
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***** Qualification standards can be found at www.infineon.com 1 2015-9-30 ~~=||.°°”~~
AUIRF7343Q ~~LL~~
## ~~Cinfineon~~
|~~Cinfineon~~|AUIRF7343Q<br>~~LL~~|
|---|---|
|**Static @ TJ = 25°C (unless otherwise specified)**||
|**Parameter**<br>**Min.**<br>**Typ.**<br>**Max. Units**<br>**Conditions**<br>V(BR)DSS<br>Drain-to-Source Breakdown Voltage<br>N-Ch<br>55<br>–––<br>–––<br>V<br>VGS=0V,ID= 250µA<br>P-Ch<br>-55<br>–––<br>–––<br>VGS=0V,ID= -250µA<br>V(BR)DSS/TJ<br>Breakdown Voltage Temp. Coefficient<br>N-Ch<br>–––<br>0.059<br>–––<br>V/°CReferenceto25°C,ID= 1mA<br>P-Ch<br>–––<br>0.054<br>–––<br>Reference to25°C,ID= -1mA<br>RDS(on)<br>Static Drain-to-Source On-Resistance<br>N-Ch<br>–––<br>0.043 0.050<br><br>VGS= 10V,ID= 4.7A<br>–––<br>0.056 0.065<br>VGS= 4.5V,ID=3.8A<br>P-Ch<br>–––<br>0.095 0.105<br>VGS= -10V,ID= -3.4A<br>–––<br>0.150 0.170<br>VGS= -4.5V,ID= -2.7A<br>VGS(th)<br>Gate Threshold Voltage<br>N-Ch<br>1.0<br>–––<br>–––<br>V<br>VDS= VGS,ID= 250µA<br>P-Ch<br>-1.0<br>–––<br>–––<br>VDS= VGS,ID= -250µA<br>gfs<br>Forward Trans conductance<br>N-Ch<br>7.9<br>–––<br>–––<br>S<br>VDS= 10V,ID= 4.5A<br>P-Ch<br>3.3<br>–––<br>–––<br>VDS= -10V,ID= -3.1A<br>~~a~~<br>~~ee a~~<br>~~ce es ees ee ee~~<br>~~EE~~<br>~~eo~~<br>~~EE EE~~<br>~~eeeres~~<br>~~ee ee~~||
|N-Ch<br>–––<br>–––<br>2.0|VDS=55V,VGS=0V|
|IDSS <br>Drain-to-Source Leakage Current<br>µA<br>P-Ch<br>–––<br>–––<br>-2.0<br>N-Ch<br>–––<br>–––<br>25|VDS= -55V,VGS= 0V<br>VDS=55V,VGS=0V,TJ=55°C|
|P-Ch<br>–––<br>–––<br>-25|VDS= -55V,VGS= 0V,TJ= 55°C|
|IGSS <br>Gate-to-Source Forward Leakage<br>N-P<br>–––<br>–––<br>±100<br>nA <br>Gate-to-Source Reverse Leakage<br>N-P<br>–––<br>–––<br>±100<br>~~a~~|VGS=±20V<br>VGS=±20V|
|**Dynamic Electrical Characteristics@ TJ = 25°C(unless otherwise specified)**||
|Qg<br>Total Gate Charge<br>N-Ch<br>–––<br>24<br>36<br>nC<br>N-Channel<br>P-Ch<br>–––<br>26<br>38<br>ID= 4.5A, VDS= 44V,VGS= 10V<br>Qgs<br>Gate-to-Source Charge<br>N-Ch<br>–––<br>2.3<br>3.4<br><br>P-Ch<br>–––<br>3.0<br>4.5<br>P-Channel<br>Qgd<br>Gate-to-Drain Charge<br>N-Ch<br>–––<br>7.0<br>10<br>ID= - 3.1A,VDS= -44V,VGS= -10V<br>P-Ch<br>–––<br>8.4<br>13<br>td(on)<br>Turn-On Delay Time<br>N-Ch<br>–––<br>8.3<br>12<br>ns<br>N-Channel<br>P-Ch<br>–––<br>14<br>22<br>VDD= 28V,ID= 1.0A,RG= 6.0<br>tr<br>Rise Time<br>N-Ch<br>–––<br>3.2<br>4.8<br>RD= 28<br>P-Ch<br>–––<br>10<br>15<br><br>td(off)<br>Turn-Off Delay Time<br>N-Ch<br>–––<br>32<br>48<br>P-Channel<br>P-Ch<br>–––<br>43<br>64<br>VDD= -28V,ID= -1.0A,RG= 6.0<br>tf<br>Fall Time<br>N-Ch<br>–––<br>13<br>20<br>RD= 28<br>P-Ch<br>–––<br>22<br>32<br>Ciss<br>Input Capacitance<br>N-Ch<br>–––<br>740<br>–––<br>pF<br>N-Channel<br>P-Ch<br>–––<br>690<br>–––<br>VGS= 0V,VDS= 25V,ƒ = 1.0MHz<br>Coss<br>Output Capacitance<br>N-Ch<br>–––<br>190<br>–––<br><br>P-Ch<br>–––<br>210<br>–––<br>P-Channel<br>Crss<br>Reverse Transfer Capacitance<br>N-Ch<br>–––<br>71<br>–––<br>VGS= 0V,VDS= -25V,ƒ = 1.0MHz<br>P-Ch<br>86<br>–––<br>~~a ee~~<br>~~eee~~<br>~~a ee~~<br>~~eee~~<br>~~ee ee~~<br>~~eee~~<br>~~ee ee~~<br>~~eee~~<br>~~a~~<br>~~ee eee~~<br>~~eeeee~~<br>~~ee ee~~<br>~~eee~~<br>~~a a~~<br>~~eee~~<br>~~a ee eee~~<br>~~ee ee~~<br>~~eee~~||
|**Diode Characteristics**||
|**Parameter**<br>**Min.**<br>**Typ.**<br>**Max. Units**|**Conditions**|
|IS <br>Continuous Source Current (Body Diode)<br>N-Ch<br>–––<br>–––<br>2.0<br>A<br>P-Ch<br>–––<br>–––<br>-2.0<br>ISM <br>Pulsed Source Current<br>N-Ch<br>–––<br>–––<br>38<br>(BodyDiode)<br>P-Ch<br>–––<br>–––<br>-27<br>~~eS~~||
|VSD<br>Diode Forward Voltage<br>N-Ch<br>–––<br>0.70<br>1.2<br>TJ= 25°C,IS= 2.0A,VGS=0V<br>P-Ch<br>–––<br>-0.80<br>-1.2<br>TJ= 25°C,IS= -2.0A,VGS=0V<br>trr<br>Reverse Recovery Time<br>N-Ch<br>–––<br>60<br>90<br>nsN-Channel<br>P-Ch<br>–––<br>54<br>80<br>TJ= 25°C ,IF= 2.0A, di/dt = 100A/µs<br>Qrr<br>Reverse Recovery Charge<br>N-Ch<br>–––<br>120<br>170<br>nCP-Channel<br>P-Ch<br>85<br>130<br>TJ= 25°C,IF= -2.0A,di/dt = 100A/µs<br>V<br>~~ae a~~<br>~~ee ee ees eeee~~<br>~~Fee,~~<br>~~eeec~~<br>~~ee ee~~||
|**Notes:**||
|Repetitive rating; pulse width limited by max. junction temperature. (See Fig. 22)||
> N-Channel ISD 4.7A, di/dt 220A/µs, VDD V(BR)DSS, TJ 150°C.
- P-Channel ISD -3.4A, di/dt -150A/µs, VDD V(BR)DSS, TJ 150°C
- N-Channel Starting TJ = 25°C, L = 6.5mH, RG = 25, IAS = 4.7A.
- P-Channel Starting TJ = 25°C, L = 20mH, RG = 25, IAS = -3.4A.
- Pulse width 300µs; duty cycle 2%.
- Surface mounted on FR-4 board , t sec.
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AUIRF7343Q ~~|~~
**N-Channel**
**Fig. 1** Typical Output Characteristics
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100<br>T = 25 C J °<br>ee es=eos<br>T = 150 C J °<br> 10<br>———<br>V = 25VDS<br>20µs PULSE WIDTH<br> 1<br>3 4 5 6<br>aan<br>V , Gate-to-Source Voltage (V)GS<br>D<br>I , Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>
**Fig. 3** Typical Transfer Characteristics
**Fig. 2** Typical Output Characteristics
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100<br> 10 a T J = 150 C° a4446<br>ee ee eee 2 ee ee ee ee<br>T = 25 C J °<br> 1<br>i i7i ft | |<br>V = 0 V GS<br>0.1<br>0.2 0.5 0.8 1.1 1.4<br>arin V ,Source-to-Drain Voltage (V)SD aeene<br>I , Reverse Drain Current (A)SD<br>**----- End of picture text -----**<br>
**Fig. 4** Typical Source-Drain Diode Forward Voltage
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**N-Channel**
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2.5<br>ID = 4.7A<br>Pe LTT<br>2.0 PELE<br>DUREAUUREEOUURERRUNDDE<br>1.5 SUHEAAUOSERRARUND? 7401<br>PEELE<br>TET EL<br>1.0<br>er<br>eePEE<br>0.5<br>ELLE<br>PELE VGS = 10V<br>0.0<br>-60 -40 -20T , Junction TemperatureJ 0 EEL 20 40 ET 60 80 100( C)°120 140 160<br>(Normalized)<br>DS(on)<br>R , Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>
**Fig 5.** Normalized On-Resistance Vs. Temperature
**Fig 6.** Typical On-Resistance Vs. Drain Current
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200<br>ID<br>TOP 2.1A<br>pf fd 3.8A<br>160 BOTTOM 4.7A<br>|<br>120 Ce ee<br>p Nf ft<br>80<br>MOS<br>40<br>BS Ne NG<br>pt<br>0 SRN<br>25 pe 50 75 100 125 150<br>Starting T , Junction TemperatureJ ( C)°<br>AS<br>E , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>
**Fig. 7** Typical On-Resistance Vs. Gate Voltage
**Fig 8.** Maximum Avalanche Energy Vs. Drain Current
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AUIRF7343Q ~~Ld~~
**N-Channel**
## ~~Cinfineon~~
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20<br>1200 VGS = 0V, f = 1MHz ID = 4.5A<br>1000 PT C CC iss rssoss = == C CC gs gdds + C + C gd , gd C SHORTEDds 16 po V V V DSDSDS = = = 48V 30V 12V {| |<br>SG or oe<br>800 Sas Ciss TP<br>12<br>Oty SSH Aan<br>600<br>PSE Y<br>8<br>PONCE | |igi<br>400 PN tt<br>Sr Coss Oo 4 TTA<br>200<br>Pes Crss TA<br>0 pliii<br>0 1 fin 10 [SE] ae [E] 100 0 4 10 20 ii 30 | 40<br>V , Drain-to-Source Voltage (V)DS Q , Total Gate Charge (nC)G<br>C, Capacitance (pF)<br>GS<br>V , Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>
- **Fig 9.** Typical Capacitance Vs. Drain-to-Source Voltage
- **Fig 10.** Typical Gate Charge Vs. Gate-to-Source Voltage
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100<br>D = 0.50<br>SSS<br>0.20<br> 10<br>0.10<br>er<br>0.05<br>[ee |<br>0.02 PDM<br> 1 0.01<br>t1<br>SINGLE PULSE<br>(THERMAL RESPONSE) t2<br>Notes:<br>1. Duty factor D = t / t 1 2<br>2. Peak T J= P DM x ZthJA + TA<br>0.1<br>0.0001 Saat 0.001 0.01 0.1 1 10 100<br>t , Rectangular Pulse Duration (sec)1<br>thJA<br>(Z )<br>Thermal Response<br>**----- End of picture text -----**<br>
**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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**P-Channel**
AUIRF7343Q
**Fig. 12** Typical Output Characteristics
**Fig. 13** Typical Output Characteristics
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100<br>FtFS<br> 100<br>=—— SS=S==S = =S = ====<br>a<br>= S==SsceneaeESE<br>====== | 4<br>=======— 10 a<br>iainiupe7aan<br>|————| T = 25 CJ ° || tt ° | hedBS T = 150 CJ SA ° = —<br>T = 150 CJ<br>Samer:ara= AP=<br> 10 |a| a | T = 25 CJ °<br>| a=== 1 E/E cE _<br>[|<br>— 2=SS==<br>An Sao sas=/eegee<br>S==seiceaeaePt<br>Péennnen<br>V = -25VDS 0.1 aoeeeeFaEHE | Pf V = 0 V GS |<br>an 20µs PULSE WIDTH | 0.2 0.4 0.6 0.8 1.0 1.2 1.4<br> 1 a S|<br>3 4 5 6 7 -V ,Source-to-Drain Voltage (V)SD<br>-V , Gate-to-Source Voltage (V)GS<br>SD<br>-I , Reverse Drain Current (A)<br>D<br>-I , Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>
**Fig. 14** Typical Transfer Characteristics
**Fig. 15** Typical Source-Drain Diode Forward Voltage
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AUIRF7343Q ~~|~~
**P-Channel**
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2.0<br>ID = -3.4 A<br>Pee LEELA EEE<br>1.5<br>at<br>PLETE EAT<br>1.0 elaaa<br>TTLA“ EEL<br>PTT HELE<br>0.5<br>PLETE EEL<br>VGS = -10V<br>0.0 CT<br>-60 -40 -20 0 20 40 60 80 100 120 140 160<br>T , Junction TemperatureJ ( C)°<br>(Normalized)<br>DS(on)<br>R , Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>
**Fig 16.** Normalized On-Resistance Vs. Temperature
**Fig 17.** Typical On-Resistance Vs. Drain Current
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300<br>ID<br>re TOP -1.5A<br>250 ee -2.7A<br>BOTTOM -3.4A<br>t+<br>200<br>pA ff ft<br>150<br>Se<br>NIN<br>100 NEN ee eee<br>PRK NLL<br>50 oS<br>0<br>25 pF | 50 | 75 rr 100 125 150<br>Starting T , Junction TemperatureJ ( C)°<br>AS<br>E , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>
**Fig. 18** Typical On-Resistance Vs. Gate Voltage
**Fig 19.** Maximum Avalanche Energy Vs. Drain Current
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P-Channel AUIRF7343Q<br>Geo<br>ee<br>1200<br>960 Sto VCC C GS iss rss oss === = 0V,CC Cgs gd ds + C + C f = 1MHz gd ,gd C SHORTED ds 2016 | ID = -3.1A | VVV DS DS DS ===--30V-12V48V | |<br>Ciss<br>720<br>No TPlinETT 12 | | | tT tT Lsy<br>PNET TERS TT Pi | |LAA<br>480<br>POINT ETT 8 Pt] LT CLA<br>Coss<br>Neal | | | Am | |<br>240<br>PSST ETT 4 || aA |<br>Crss<br>pe yr] | tt<br>0 ell AEE EEE<br> 1 10 100 0<br>0 10 20 30 40<br>-V , Drain-to-Source Voltage (V)DS Q , Total Gate Charge (nC)G<br>Fig 20. Typical Capacitance Vs. Fig 21. Typical Gate Charge Vs.<br> Drain-to-Source Voltage Gate-to-Source Voltage<br> 100<br>D = 0.50<br>0.20<br>ee ee<br> 10<br>0.10<br>eS [ee]<br>0.05<br>0.02 PDM<br> 1 0.01<br>t1<br>SINGLE PULSE<br>(THERMAL RESPONSE) t2<br>Ea poe<br>Notes:<br>1. Duty factor D = t / t 1 2<br>2. Peak T J= P DM x ZthJA + TA<br>0.1<br>0.0001 0.001 0.01 0.1 1 10 100<br>= ial a<br>t , Rectangular Pulse Duration (sec)1<br>C, Capacitance (pF)<br>GS<br>-V , Gate-to-Source Voltage (V)<br>thJA<br>(Z )<br>Thermal Response<br>**----- End of picture text -----**<br>
**Fig 22.** Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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AUIRF7343Q ~~LL~~
## **SO-8 Package Outline** (Dimensions are shown in millimeters (inches)
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INCHES MILLIMETERS<br>DIM<br>D B MIN MAX MIN MAX<br>ne o> eees eeeeees<br>A 5 a A .0532 ee .0688 ee ee 1.35 1.75<br>A1 .0040 .0098 0.10 0.25<br>i ee ee ee ee<br>b .013 .020 0.33 0.51<br>8 7 6 5 c .0075 .0098 0.19 0.25<br>6 H ee D .189 ee .1968 ee 4.80 ee 5.00<br>E eeee<br>1 2 3 4 0.25 [.010] A a E .1497 ee .1574 3.80 ee 4.00 eeee<br>e .050 BASIC 1.27 BASIC<br>1 a ee ee<br>e 1 .025 BASIC 0.635 BASIC<br>a = a ee ee es<br>| ee H .2284 .2440 ee 5.80 6.20<br>K .0099 .0196 0.25 0.50<br>6X e - o b PF fo<br>L .016 .050 0.40 1.27<br>ee ee ee ee ee<br>y 0° 8° 0° 8°<br>ee ee ee ee<br>e1 K x 45°<br>A<br>C<br>y<br>0.10 [.004]<br>8X b A1 8X L 8X c<br>0.25 [.010] C A B 7<br>**----- End of picture text -----**<br>
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N O T E S : F O O T P R I N T<br>1 . D I M E N S I O N I N G & T O L E R A N C I N G P E R A S M E Y 1 4 . 5 M - 1 9 9 4 . 8 X 0 . 7 2 [ . 0 2 8 ]<br>2 . C O N T R O L L I N G D I M E N S I O N : M I L L I M E T E R<br>3 . D I M E N S I O N S A R E S H O W N I N M I L L I M E T E R S [ I N C H E S ] .<br>4 . O U T L I N E C O N F O R M S T O J E D E C O U T L I N E M S - 0 1 2 A A .<br>' OHOO0<br>5 M | D I MO LEDN PS RI OONT DR UO SE I OS NN SO NT I NO TC TL OU ED EX MC EOELDD 0 P. 1R5O [T. 0R0U6 S] .I O N S . 6 . 4 6 [ . 2 5 5 ]<br>6 D I M E N S I O N D O E S N O T I N C L U D E M O L D P R O T R U S I O N S .<br> M | O L D P R O T R U S I O N S N O T T O E X C E E D 0 . 2 5 [ . 0 1 0 ] .<br>7 D I M E N S I O N I S T H E L E N G T H O F L E A D F O R S O L D E R I N G T O<br> A S U B S T R A T E . . booo3<br>3 X 1 . 2 7 [ . 0 5 0 ] 8 X 1 . 7 8 [ . 0 7 0 ]<br>**----- End of picture text -----**<br>
## **SO-8 Part Marking Information**
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~~Cinfineon~~
AUIRF7343Q ~~LL~~
**SO-8 Tape and Reel** (Dimensions are shown in millimeters (inches)
## TERMINAL NUMBER 1
**==> picture [309 x 115] intentionally omitted <==**
**----- Start of picture text -----**<br>
12.3 ( .484 )<br>11.7 ( .461 )<br>8.1 ( .318 )<br>7.9 ( .312 ) FEED DIRECTION<br>**----- End of picture text -----**<br>
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
**==> picture [274 x 120] intentionally omitted <==**
**----- Start of picture text -----**<br>
330.00<br>(12.992)<br> MAX.<br>14.40 ( .566 )<br>12.40 ( .488 )<br>**----- End of picture text -----**<br>
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
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~~“ee~~
AUIRF7343Q ~~& &»«=€=5 =a~~
## **Qualification Information**
|**Qualification Information**|**Qualification Information**|||
|---|---|---|---|
|**Qualification Level**||Automotive<br>(per AEC-Q101)||
|||Comments: This part number(s) passed Automotive qualification. Infineon’s<br>Industrial and Consumer qualification level is granted by extension of the higher<br>Automotive level.||
|**Moisture Sensitivity Level**||SO-8|MSL1|
|**ESD**|Machine Model|Class M2 (+/- 200V)† <br>AEC-Q101-002||
||Human Body Model|Class H1A (+/- 500V)†<br>AEC-Q101-001||
||Charged Device Model|Class C5 (+/- 1125V)† <br>AEC-Q101-005||
|**RoHS Compliant**||Yes||
- Highest passing voltage.
|**Date**|**Comments**|
|---|---|
|3/10/2014|<br>Added "Logic Level Gate Drive" bullet in the features section on page 1<br><br>Updated data sheet with new IR corporate template|
|9/30/2015|<br>Updated datasheet with corporate template<br><br>Corrected orderingtable onpage 1.|
**Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2015 All Rights Reserved.**
## **IMPORTANT NOTICE**
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office (www.infineon.com).
## **WARNINGS**
Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
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Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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