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AUIRF7342QTR
Dual MOSFET, P Channel, 55 V, 55 V, 3.4 A, 3.4 A, 0.095 ohm
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- Manufacturer: INFINEON
- Product type: Dual MOSFETs
- Transistor Polarity:Dual P Channel; Continuous Drain Current Id:-3.4A; Drain Source Voltage Vds:-55V; On Resistance Rds(on):0.095ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (23-Jan-2024)
- No. of Pins: 8Pins
- Channel Type: P Channel
- Product Range: HEXFET Series
- Qualification: AEC-Q101
- Transistor Case Style: SOIC
- Operating Temperature Max: 150°C
- Power Dissipation N Channel: 2W
- Power Dissipation P Channel: 2W
- Drain Source Voltage Vds N Channel: 55V
- Drain Source Voltage Vds P Channel: 55V
- Continuous Drain Current Id N Channel: 3.4A
- Continuous Drain Current Id P Channel: 3.4A
- Drain Source On State Resistance N Channel: 0.095ohm
- Drain Source On State Resistance P Channel: 0.095ohm
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 1.16 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
AUIRF7342Q ~~_——~~ **AUTOMOTIVE GRADE** ## ~~Cinfineon~~ **Features** S1 1 8 D1 **VDSS -55V** Advanced Planar Technology G1 2 7 D1 Low On-Resistance S2 3 6 D2 **RDS(on) max. 0.105** G2 4 5 D2 Logic Level Gate Drive Dual P Channel MOSFET Top View **ID -3.4A** ~~_—~~ Dynamic dv/dt Rating 150°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free, RoHS Compliant Automotive Qualified * SO-8 AUIRF7342Q **Description** Specifically designed for Automotive applications, this cellular design of **G D S** HEXFET® Power MOSFETs utilizes the latest processing techniques Gate Drain Source to achieve low on-resistance per silicon area. This benefit combined ~~ee ee~~ with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications. **Standard Pack Base part number Package Type Orderable Part Number Form Quantity** ~~Bs~~ AUIRF7342Q SO-8 Tape and Reel 4000 AUIRF7342QTR **Absolute Maximum Ratings** Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified. **Symbol Parameter Max. Units** VDS Drain-Source Voltage -55 V ID @ TA = 25°C Continuous Drain Current, VGS @ -10V -3.4 ID @ TA = 70°C Continuous Drain Current, VGS @ -10V -2.7 A IDM Pulsed Drain Current -27 PD @TA = 25°C Maximum Power Dissipation 2.0 W PD @TA = 70°C Maximum Power Dissipation 1.3 ~~os~~ Linear Dearating Factor 0.016 mW°/C VGS Gate-to-Source Voltage ± 20 V VGSM Gate-to-Source Voltage Single Pulse tp < 10µs 30 ~~a~~ EAS Single Pulse Avalanche Energy (Thermally Limited) 114 mJ dv/dt Peak Diode Recovery dv/dt 5.0 ~~ee~~ V/ns TJ Operating Junction and -55 to + 150 °C ~~a~~ TSTG Storage Temperature Range **Thermal Resistance Symbol Parameter Typ. Max. Units** ~~[_——}~~ RJA ~~|~~ Junction-to-Ambient ––– ~~—}~~ 62.5 ~~—}~~ °C/W ~~—_~~ HEXFET® is a registered trademark of Infineon. ***** Qualification standards can be found at www.infineon.com 1 2015-9-30 ~~Cinfin eon~~ AUIRF7342Q ~~LL~~ **Static @ TJ = 25°C (unless otherwise specified)** |**Parameter**<br>**Min.**<br>**Typ. Max. Units**<br>**Conditions**<br>V(BR)DSS<br>Drain-to-Source Breakdown Voltage<br>-55<br>–––<br>–––<br>V<br>VGS =0V, ID = -250µA<br>V(BR)DSS/TJ<br>Breakdown Voltage Temp. Coefficient<br>––– -0.054 –––<br>V/°C Reference to 25°C,ID= -1mA<br>RDS(on)<br>Static Drain-to-Source On-Resistance<br>––– 0.095 0.105<br>VGS= -10V,ID= -3.4A<br>––– 0.150 0.170<br>VGS= -4.5V,ID= -2.7A<br>VGS(th)<br>Gate Threshold Voltage<br>-1.0<br>–––<br>-3.0<br>V<br>VDS= VGS,ID= -250µA<br>gfs<br>Forward Trans conductance<br>3.3<br>–––<br>–––<br>S<br>VDS = -10V, ID = -3.1A<br>IDSS<br>Drain-to-Source Leakage Current<br>–––<br>–––<br>-2.0<br>µAVDS = -55V, VGS =0V<br>–––<br>–––<br>-25<br>VDS = -55V,VGS =0V,TJ =55°C<br>IGSS<br>Gate-to-Source Forward Leakage<br>–––<br>–––<br>-100<br>nAVGS = -20V<br>Gate-to-Source Reverse Leakage<br>–––<br>–––<br>100<br>VGS =20V<br>~~ee~~<br>~~ee~~<br>~~es~~<br>~~rs ts ts QO (~~<br>~~pfa~~<br>~~YY—————~~| |---| |**Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)**| |Qg<br>Total Gate Charge<br>–––<br>26<br>38<br>nC<br>ID= -3.1A<br>Qgs<br>Gate-to-Source Charge<br>–––<br>3.0<br>4.5<br>VDS= -44V<br>Qgd<br>Gate-to-Drain Charge<br>–––<br>8.4<br>13<br>VGS= -10V, SeeFig.10 <br>td(on)<br>Turn-On Delay Time<br>–––<br>14<br>22<br>VDD= -28V<br>~~——~~<br>~~ee oe oe oe~~| |tr<br>RiseTime<br>–––<br>10<br>15<br>ID= -1.0A| |ns<br>td(off)<br>Turn-Off DelayTime<br>–––<br>43<br>64<br>RG= 6.0| |tf<br>Fall Time<br>–––<br>22<br>32<br>RD=16| |Ciss<br>Input Capacitance<br>–––<br>690<br>–––<br>pF<br>VGS= 0V<br>Coss<br>Output Capacitance<br>–––<br>210<br>–––<br>VDS= -25V<br>Crss<br>ReverseTransferCapacitance<br>–––<br>86<br>–––<br>ƒ= 1.0MHz,See Fig.9<br>~~————————~~| |**Diode Characteristics**| |**Parameter **<br>**Min.**<br>**Typ. Max.Units**<br>**Conditions**<br>IS<br>Continuous Source Current<br>–––<br>–––<br>-2.0<br>A<br>MOSFET symbol<br>(Body Diode)<br>showing the<br>ISM<br>Pulsed Source Current<br>–––<br>–––<br>-27<br>integral reverse<br>(Body Diode)<br>p-n junction diode.<br>VSD<br>Diode Forward Voltage<br>–––<br>–––<br>-1.2<br>V<br>TJ =25°C,IS= -2.0A,VGS =0V<br>trr<br>Reverse Recovery Time<br>–––<br>54<br>80<br>nsTJ= 25°C ,IF= -2.0A,<br>Qrr<br>Reverse RecoveryCharge<br>–––<br>85<br>130<br>nC di/dt = 100A/µs<br>~~ee~~<br>~~Ds Is(~~<br>~~(O~~<br>~~a~~<br>~~er 2~~<br>~~pf~~<br>~~—————~~<br>~~oe ae ee~~| |**Notes:**| |Repetitive rating; pulse width limited by max. junction temperature. (See Fig. 11)| - Starting TJ = 25°C, L = 20mH, RG = 25, IAS = -3.4A. (See Fig. 8) - ISD -3.4A, di/dt 150A/µs, VDD V(BR)DSS, TJ 150°C. - Pulse width 300µs; duty cycle 2%. - When mounted on 1" square copper board , t 10sec. 2 2015-9-30 AUIRF7342Q **==> picture [206 x 195] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>VGS<br>TOP -15V<br>-12V<br>-10V<br>-8.0V<br>-4.5V<br>-4.0V<br>10 -3.5V<br>BOTTOM -3.0V<br>-3.0V<br>1<br>60µs PULSE WIDTH<br>Tj = -40°C<br>0.1<br>0.1 1 10 100 1000<br>-VDS, Drain-to-Source Voltage (V)<br>-ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br> **Fig. 1** Typical Output Characteristics **==> picture [200 x 195] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>VGS<br>TOP -15V<br>-12V<br>-10V<br>-8.0V<br>-4.5V<br>-4.0V<br>10 -3.5V<br>BOTTOM -3.0V<br>-3.0V<br>1<br>f--<br>60µs PULSE WIDTH<br>Tj = 150°C<br>0.1 oe<br>0.1 1 10 100 1000<br>-VDS, Drain-to-Source Voltage (V)<br>-ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br> **Fig. 3** Typical Output Characteristics **==> picture [207 x 540] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>VGS<br>TOP -15V<br>-12V<br>-10V<br>-8.0V<br>-4.5V<br>-4.0V<br>10 -3.5V<br>BOTTOM -3.0V<br>-3.0V<br>1<br>60µs PULSE WIDTH<br>Tj = 25°C<br>0.1<br>0.1 1 10 100 1000<br>-VDS, Drain-to-Source Voltage (V)<br>Fig. 2 Typical Output Characteristics<br>100<br>TJ = -40°C<br>T J = 25°C<br>TJ = 150°C<br>10<br>1<br>TT<br>V DS = -25V<br>60µs PULSE WIDTH<br>0.1<br>1 Dias 2 3 4 5 6 7<br>-VGS, Gate-to-Source Voltage (V)<br>-ID, Drain-to-Source Current (A)<br>-ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br> **Fig. 2** Typical Output Characteristics **Fig. 4** Typical Transfer Characteristics 3 2015-9-30 ~~Cinfineon~~ AUIRF7342Q ~~|~~ **==> picture [204 x 188] intentionally omitted <==** **----- Start of picture text -----**<br> 2.0<br>ID = -3.4 A<br>EE<br>1.5<br>COTPEELE<br>1.0 CLELer eLETAr<br>eT<br>CoO ana EE<br>0.5 MIANIRUANIONAIANE<br>HA<br>TTOATENTOOTEOTOOUIGE<br>LEE | VGS = -10V<br>0.0<br>-60 -40 -20 0 20 40 60 80 100 120 140 160<br>T , Junction TemperatureJ ( C)°<br>(Normalized)<br>DS(on)<br>R , Drain-to-Source On Resistance<br>**----- End of picture text -----**<br> **Fig 5.** Normalized On-Resistance Vs. Temperature **Fig 6.** Typical On-Resistance Vs. Drain Current **==> picture [196 x 187] intentionally omitted <==** **----- Start of picture text -----**<br> 300<br>ID<br>TOP -1.5A<br>250 eeee ee -2.7A<br>Aj} BOTTOM -3.4A<br>200 PX<br>150<br>1}<br>NE A ee ee ee<br>100 KXAN<br>50<br>NSN Eee<br>PSS<br>0<br>25 50 75 100 125 150<br>ta Starting T , Junction TemperatureJ ( C)°<br>AS<br>E , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br> **Fig. 7** Typical On-Resistance Vs. Gate Voltage **Fig 8.** Maximum Avalanche Energy Vs. Drain Current 2015-9-30 4 AUIRF7342Q ~~—e~~ **==> picture [220 x 187] intentionally omitted <==** **----- Start of picture text -----**<br> 1200<br>VGS = 0V, f = 1MHz<br>C iss = C gs + C gd , C SHORTED ds<br>Crss = Cgd<br>960 So Coss = Cds + Cgd<br>Sooo<br>Ciss<br>720 NS ee<br>PNET TERR TT<br>480 Ne el<br>Coss<br>ee el<br>240<br>ama TH Crss ence<br>oH |EEF E<br>0<br> 1 10 100<br>-V , Drain-to-Source Voltage (V)DS<br>C, Capacitance (pF)<br>**----- End of picture text -----**<br> **Fig 9.** Typical Capacitance Vs. Drain-to-Source Voltage **==> picture [201 x 196] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>T J = -40°C<br>TJ = 25°C<br>T J = 150°C<br>oP SH<br>10<br>el<br>VGS = 0V<br>1.0<br>0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4<br>-VSD, Source-to-Drain Voltage (V)<br>-ISD, Reverse Drain Current (A)<br>**----- End of picture text -----**<br> **Fig. 11** Typical Source-Drain Diode Forward Voltage **==> picture [207 x 188] intentionally omitted <==** **----- Start of picture text -----**<br> 20<br>ID = -3.1A<br>V DS = -48V<br>pt VDS = -30V | |<br>16 V DS = -12V<br>ooanes<br>12 aeAr<br>8 ane|TAZen<br>4<br>PTA |<br>FARE<br>0<br>0 / pt 10 20 t 30 t 40<br>Q , Total Gate Charge (nC)G<br>GS<br>-V , Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br> ## **Fig 10.** Typical Gate Charge Vs. Gate-to-Source Voltage **==> picture [199 x 197] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>OPERATION IN THIS AREA<br>LIMITED BY RDS(on)<br>10<br>al . 100µsec<br>F *s a<br>1msec<br>1<br>10msec<br>Tc = 25°C<br>Tj = 150°C<br>Single Pulse<br>0.1<br>1 10 100<br>-VDS , Drain-toSource Voltage (V)<br>-ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br> **Fig. 12** Maximum Safe Operating Area 2015-9-30 5 ~~Cinfineon~~ AUIRF7342Q ~~LL~~ **==> picture [206 x 196] intentionally omitted <==** **----- Start of picture text -----**<br> 3.5<br>I<br>3.0<br>ee<br>2.5<br>wae<br>2.0<br>1.5<br>ENE<br>|<br>1.0<br>| |<br>pf<br>0.5<br>| | A<br>P|<br>0.0<br>tT |<br>25 50 75 100 125 150<br> TA , Ambient Temperature (°C)<br>-ID, Drain Current (A)<br>**----- End of picture text -----**<br> **Fig 13.** Maximum Drain Current vs. Ambient Temperature **==> picture [411 x 187] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>D = 0.50<br>0.20<br> 10<br>0.10<br>er<br>0.05<br>0.02 PDM<br> 1 0.01<br>t1<br>SINGLE PULSE<br>(THERMAL RESPONSE) =, alt t2<br>Notes:<br>1. Duty factor D = t / t 1 2<br>Fan 2. Peak T J= P DM x ZthJA + TA<br>0.1<br>0.0001 0.001 0.01 0.1 1 10 100<br>t , Rectangular Pulse Duration (sec)1<br>thJA<br>(Z )<br>Thermal Response<br>**----- End of picture text -----**<br> **Fig 14.** Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 6 2015-9-30 ~~Cinfineon~~ AUIRF7342Q ~~LL~~ **SO-8 Package Outline** (Dimensions are shown in millimeters (inches) **==> picture [427 x 329] intentionally omitted <==** **----- Start of picture text -----**<br> INCHES MILLIMETERS<br>DIM<br>D _" B ae——}—— MIN MAX MIN MAX<br>A 5 | a A .0532 .0688 1.35 1.75<br>ee A1 .0040 .0098 0.10 0.25<br>a b .013 .020 0.33 0.51<br>6 | 8 7 6 5 H ee cD .0075.189 .0098.1968 0.194.80 0.255.00<br>E<br>1 2 3 4 0.25 [.010] A > E .1497 .1574 > 3.80 4.00<br>e .050 BASIC 1.27 BASIC<br>|<br>ee e 1 .025 BASIC 0.635 BASIC<br>= ee<br>> H .2284 .2440 5.80 6.20<br>6X e JL > K .0099 .0196 0.25 0.50<br>a L .016 .050 0.40 1.27<br>ee y 0° 8° 0° 8°<br>e1 K x 45°<br>A<br>A C<br>y<br>0.10 [.004]<br>8X b A1 8X L 8X c<br>0.25 [.010] C A B 7<br>N O T E S : F O O T P R I N T<br>1 . D I M E N S I O N I N G & T O L E R A N C I N G P E R A S M E Y 1 4 . 5 M - 1 9 9 4 . 8 X 0 . 7 2 [ . 0 2 8 ]<br>2 . C O N T R O L L I N G D I M E N S I O N : M I L L I M E T E R<br>3 . D I M E N S I O N S A R E S H O W N I N M I L L I M E T E R S [ I N C H E S ] .<br>4 . O U T L I N E C O N F O R M S T O J E D E C O U T L I N E M S - 0 1 2 A A .<br>ooo<br>5 M | D I MO LEDN PS RI OONT DR UO SE I OS NN SO NT I NO TC TL OU ED EX MC EOELDD 0 P. 1R5O [T. 0R0U6 S] .I O N S . 6 . 4 6 [ . 2 5 5 ]<br>6 D I M E N S I O N D O E S N O T I N C L U D E M O L D P R O T R U S I O N S .<br> M O L D P R O T R U S I O N S N O T T O E X C E E D 0 . 2 5 [ . 0 1 0 ] .<br>7 D I M E N S I O N I S T H E L E N G T H O F L E A D F O R S O L D E R I N G T O<br> A S U B S T R A T E . , OJOOUUO }<br>3 X 1 . 2 7 [ . 0 5 0 ] 8 X 1 . 7 8 [ . 0 7 0 ]<br>**----- End of picture text -----**<br> ## **SO-8 Part Marking Information** 2015-9-30 7 ~~Cinfineon~~ AUIRF7342Q ~~LL~~ **SO-8 Tape and Reel** (Dimensions are shown in millimeters (inches) ## TERMINAL NUMBER 1 **==> picture [309 x 115] intentionally omitted <==** **----- Start of picture text -----**<br> 12.3 ( .484 )<br>11.7 ( .461 )<br>8.1 ( .318 )<br>7.9 ( .312 ) FEED DIRECTION<br>**----- End of picture text -----**<br> NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. **==> picture [274 x 120] intentionally omitted <==** **----- Start of picture text -----**<br> 330.00<br>(12.992)<br> MAX.<br>14.40 ( .566 )<br>12.40 ( .488 )<br>**----- End of picture text -----**<br> NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. 8 2015-9-30 ~~“ee~~ AUIRF7342Q ~~& &»«=€=5 =a~~ ## **Qualification Information** |**Qualification Information**|**Qualification Information**||| |---|---|---|---| |**Qualification Level**||Automotive<br>(per AEC-Q101)|| |||Comments: This part number(s) passed Automotive qualification. Infineon’s<br>Industrial and Consumer qualification level is granted by extension of the higher<br>Automotive level.|| |**Moisture Sensitivity Level**||SO-8|MSL1| |**ESD**|Machine Model|Class M2 (+/- 200V)† <br>AEC-Q101-002|| ||Human Body Model|Class H1A (+/- 500V)†<br>AEC-Q101-001|| ||Charged Device Model|Class C5 (+/- 1125V)† <br>AEC-Q101-005|| |**RoHS Compliant**||Yes|| - Highest passing voltage. ## **Revision History** |**Date**|**Comments**| |---|---| |3/27/2014|<br>Added "Logic Level Gate Drive" bullet in the features section on page 1<br><br>Updated data sheet with new IR corporate template| |9/30/2015|<br>Updated datasheet with corporate template<br><br>Corrected orderingtable onpage 1.| **Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2015 All Rights Reserved.** ## **IMPORTANT NOTICE** The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office (www.infineon.com). ## **WARNINGS** Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 9 2015-9-30
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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