AUIRF7316QTR

**AUTOMOTIVE GRADE** 

## ~~Cinfin eon~~ 

## AUIRF7316Q 

**==> picture [540 x 344] intentionally omitted <==**

**----- Start of picture text -----**<br>
Features S1 1 8 D1 VDSS  -30V<br> Advanced Planar Technology  G1 2 7 D1<br> Low On-Resistance  S2 3 6 D2 RDS(on)   typ.  0.042 <br> Logic Level Gate Drive  G2 4 5 D2              max.  0.058 <br> Dual P Channel MOSFET<br>Top View ID   -4.9A<br> Surface Mount<br> Available in Tape & Reel<br> 150°C Operating Temperature<br> Lead-Free, RoHS Compliant<br> Automotive Qualified *<br>Description<br>Specifically designed for Automotive applications, these HEXFET®<br>Power MOSFET's in a Dual SO-8 package utilize the lastest  SO-8<br>processing techniques to achieve extremely low  on-resistance per   AUIRF7316Q<br>silicon  area.  Additional features of these Automotive qualified<br>HEXFET Power MOSFET's  are a 150°C  junction  operating<br>G  D  S<br>temperature, fast  switching speed and improved repetitive avalanche<br>rating. These benefits combine to make this design an extremely  Gate  Drain  Source<br>a<br>efficient and reliable device for use in Automotive applications and a<br>wide variety of other applications.<br>The efficient SO-8 package provides enhanced thermal characteristics<br>and dual MOSFET die capability making it ideal in a variety of power<br>applications.  This dual, surface mount SO-8 can dramatically reduce<br>board space and is also available  in Tape & Reel.<br>Standard Pack<br>Base part number  Package Type  Orderable Part Number<br>Form  Quantity<br>AUIRF7316Q  SO-8  Tape and Reel   4000  AUIRF7316QTR<br>es<br>**----- End of picture text -----**<br>


## **Absolute Maximum Ratings** 

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.   These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified. 

|otherwise specified.||||
|---|---|---|---|
|**Symbol**|**Parameter**|**Max.**|**Units**|
|VDS|Drain-Source Voltage|-30|V|
|ID@ TA= 25°C|Continuous Drain Current, VGS@ 10V|-4.9|A|
|ID @TA= 70°C|Continuous Drain Current,VGS @10V|-3.9||
|IDM|Pulsed Drain Current|-30||
|IS|Continuous Source Current (Diode Conduction)|-2.5||
|PD@TA= 25°C<br>~~——_—_—_—~~|Maximum Power Dissipation<br>~~——_—_—_—~~|2.0<br>~~——_—_—_—~~|W<br>~~——_—_—_—~~|
|PD@TA= 70°C<br>~~——_—_—_—~~|Maximum Power Dissipation<br>~~——_—_—_—~~|1.3<br>~~——_—_—_—~~||
|VGS<br>~~——_—_—_—~~|Gate-to-SourceVoltage<br>~~——_—_—_—~~|± 20<br>~~——_—_—_—~~|V<br>~~——_—_—_—~~|
|EAS<br>~~——_—_—_—~~|Single Pulse Avalanche Energy (ThermallyLimited)<br>~~——_—_—_—~~|140<br>~~——_—_—_—~~|mJ<br>~~——_—_—_—~~|
|IAR<br>~~ee~~|Avalanche Current<br>~~ee~~|-2.8<br>~~ee~~|A<br>~~ee~~|
|EAR<br>~~ee~~|Repetitive Avalanche Energy<br>~~ee~~|0.20<br>~~ee~~|mJ<br>~~ee~~|
|dv/dt<br>~~ee~~|Peak Diode Recoverydv/dt<br>~~ee~~|-5.0<br>~~ee~~|V/ns<br>~~ee~~|
|TJ<br>TSTG<br>~~ee~~|Operating Junction and<br>StorageTemperatureRange<br>~~ee~~|-55  to + 150<br>~~ee~~|°C<br>~~ee~~|



2015-9-30 

~~Cinfin eon~~ 

AUIRF7316Q ~~LL~~ 

**Static @ TJ = 25°C (unless otherwise specified)** 

|**Parameter**<br>**Min.**<br>**Typ. Max. Units**<br>**Conditions**<br>V(BR)DSS<br>Drain-to-Source Breakdown Voltage<br>-30<br>–––<br>–––<br>V<br>VGS =0V, ID = -250µA<br>V(BR)DSS/TJ<br>Breakdown Voltage Temp. Coefficient<br>––– 0.022 –––<br>V/°C Reference to 25°C,ID= -1mA<br>RDS(on)<br>Static Drain-to-Source On-Resistance<br>––– 0.042 0.058<br>VGS= -10V,ID= -4.9A<br>––– 0.076 0.098<br>VGS= -4.5V,ID= -3.6A<br>VGS(th)<br>Gate Threshold Voltage<br>-1.0<br>–––<br>-3.0<br>V<br>VDS= VGS,ID= -250µA<br>gfs<br>Forward Trans conductance<br>–––<br>7.7<br>–––<br>S<br>VDS = -15V, ID = -4.9A<br>IDSS<br>Drain-to-Source Leakage Current<br>–––<br>–––<br>-1.0<br>µAVDS = -24V, VGS =0V<br>–––<br>–––<br>-25<br>VDS = -24V,VGS =0V,TJ =55°C<br>IGSS<br>Gate-to-Source Forward Leakage<br>–––<br>–––<br>-100<br>nAVGS = -20V<br>Gate-to-Source Reverse Leakage<br>–––<br>–––<br>100<br>VGS =20V<br>~~ee~~<br>~~ee~~<br>~~es~~<br>~~rs ts ts QO (~~<br>~~pfa~~<br>~~YY————~~|
|---|
|**Dynamic  Electrical Characteristics @ TJ = 25°C (unless otherwise specified)**|
|Qg<br>Total Gate Charge<br>–––<br>23<br>34<br>nC<br>ID= -4.9A<br>Qgs<br>Gate-to-Source Charge<br>–––<br>3.8<br>5.7<br>VDS= -15V<br>Qgd<br>Gate-to-Drain Charge<br>–––<br>5.9<br>8.9<br>VGS= -10V, SeeFig.10 <br>td(on)<br>Turn-On Delay Time<br>–––<br>13<br>19<br>VDD= -15V<br>~~——~~<br>~~ee oe oe oe~~|
|tr<br>RiseTime<br>–––<br>13<br>20<br>ID= -1.0A|
|ns<br>td(off)<br>Turn-Off DelayTime<br>–––<br>34<br>51<br>RG= 6.0|
|tf<br>Fall Time<br>–––<br>32<br>48<br>RD=15|
|Ciss<br>Input Capacitance<br>–––<br>710<br>–––<br>pF<br>VGS= 0V<br>Coss<br>OutputCapacitance<br>–––<br>380<br>–––<br>VDS= -25V<br>Crss<br>ReverseTransferCapacitance<br>–––<br>180<br>–––<br>ƒ= 1.0MHz,See Fig.5<br>~~———~~<br>~~esee~~|
|**Diode Characteristics**|
|**Parameter **<br>**Min.**<br>**Typ. Max.Units**<br>**Conditions**<br>IS<br>Continuous Source Current<br>–––<br>–––<br>-2.5<br>A<br>MOSFET symbol<br>(Body Diode)<br>showing  the<br>ISM<br>Pulsed Source Current<br>–––<br>–––<br>-30<br>integral reverse<br>(Body Diode)<br>p-n junction diode.<br>VSD<br>Diode Forward Voltage<br>–––<br>-0.78-1.0<br>V<br>TJ =25°C,IS= -1.7A,VGS =0V<br>trr<br>Reverse Recovery Time<br>–––<br>44<br>66<br>nsTJ= 25°C ,IF= -1.7A,<br>Qrr<br>Reverse RecoveryCharge<br>–––<br>42<br>63<br>nC   di/dt = 100A/µs<br>~~eses~~<br>~~rs rs td~~<br>~~=e~~<br>~~pf~~<br>~~———~~<br>~~es ee oe~~|
|**Notes:**|
|Repetitive rating;  pulse width limited by max. junction temperature. (See Fig. 11)|



-  Starting TJ = 25°C, L = 35mH, RG = 25, IAS = -2.8A. 

ISD -2.8A, di/dt 150A/µs, VDD V(BR)DSS, TJ  150°C. 

-  Pulse width 300µs; duty cycle  2%. 

-  Surface mounted on FR-4 board , t sec. 

2 

2015-9-30 

AUIRF7316Q 

**==> picture [221 x 214] intentionally omitted <==**

**----- Start of picture text -----**<br>
100<br>                   VGS<br> TOP         - 15V<br>                 - 10V<br>                 - 7.0V<br>                 - 5.5V<br>- 4.5V 4.5V<br>                 - 4.0V<br>- 3.5V 3.5V<br> BOTTOM - 3.0V<br>10<br>-3.0V3.0V<br> 20µs PULSE WIDTH<br> T   = 150°CJJ<br>10.1<br>OG<br>0.1 1 10<br>-V     , Drain-to-Source Voltage (V)DSDS<br>D<br>-I   , Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**==> picture [531 x 566] intentionally omitted <==**

**----- Start of picture text -----**<br>
100                    VGS   TOP         - 15V<br> TOP         - 15V                  - 10V<br>                 - 10V                  - 7.0V<br>                 - 7.0V                  - 5.5V<br>                 - 5.5V - 4.5V 4.5V<br>- 4.5V                  - 4.0V<br>                 - 4.0V - 3.5V 3.5V<br>- 3.5V  BOTTOM - 3.0V<br> BOTTOM - 3.0V<br>10<br>10<br>-3.0V3.0V<br> -3.0V<br> 20µs PULSE WIDTH<br> 20µs PULSE WIDTH   T   = 150°CJJ<br>1 |  T   = 25°CJ A 10.1 OG 1 10<br>0.1 1 10<br>-V     , Drain-to-Source Voltage (V)DSDS<br>-V     , Drain-to-Source Voltage (V)DS<br>Fig. 1  Typical Output Characteristics  Fig. 2  Typical Output Characteristics<br>100<br>100<br>T  = 25°CJ<br>T  = 150°CJ T  = 150°CJ<br>10<br>eet] 10<br>T  = 25°CJ<br> V     = -10VDS<br> 20µs PULSE WIDTH<br>1 AU A 1 LA V      = 0V GS<br>3.0 3.5 4.0 4.5 5.0 5.5 6.0<br>0.4 0.6 0.8 1.0 1.2 1.4<br>-V     , Gate-to-Source Voltage (V)GS -V     , Source-to-Drain Voltage (V)SD<br>D<br>D -I   , Drain-to-Source Current (A)<br>-I   , Drain-to-Source Current (A)<br>SD<br>-I     , Reverse Drain Current (A)<br>D<br>-I   , Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig. 3** Typical Transfer Characteristics 

**Fig. 4** Typical Source-Drain Diode Forward Voltage 

3 

2015-9-30 

Cinfineon 

AUIRF7316Q 

**==> picture [205 x 188] intentionally omitted <==**

**----- Start of picture text -----**<br>
2.0<br>ID = 4.9A<br>Pee LEE<br>ELEEEEEEEELEEEL EE o<br>1.5<br>pal<br>ELE<br>1.0 ELLE Le TELE<br>TTTLert<br>0.5 TOLLE EE EE<br>LEE<br>VGS = 10V<br>0.0 OUUn ee<br>-60 -40 -20 0 20 40 60 80 100 120 140 160<br>T  , Junction TemperatureJ (  C)°<br>(Normalized)<br>DS(on)<br>R            , Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>


**Fig 5.** Normalized On-Resistance Vs. Temperature 

**Fig 6.** Typical On-Resistance Vs. Drain Current 

**==> picture [196 x 187] intentionally omitted <==**

**----- Start of picture text -----**<br>
300<br>ID<br>TOP -1.3A<br>250 Nae -2.2A<br>BOTTOM -2.8A<br>200<br>.<br>150 SNe<br>N<br>100 NN<br>NOG<br>50 BNS<br>| [NWN]<br>0<br>25 PT Starting T  , Junction Temperature50 J 75 ISS 100 — 125 (  C)° 150<br>AS<br>E     , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig. 7** Typical On-Resistance Vs. Gate Voltage 

**Fig 8.** Maximum Avalanche Energy Vs. Drain Current 

2015-9-30 

4 

~~Cinfineon~~ 

AUIRF7316Q ~~|~~ 

**==> picture [191 x 187] intentionally omitted <==**

**----- Start of picture text -----**<br>
20<br>ID = -4.9A<br>VDS =-15V<br>16<br>Gee<br>12<br>tA<br>a 4<br>8<br>TAF<br>4<br>Pt iA | | tt<br>ann Oe ee ee<br>Ann<br>0<br>0 10 20 30 40<br>Q   , Total Gate Charge (nC)G<br>GS<br>-V     , Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 9.** Typical Capacitance Vs. Drain-to-Source Voltage 

**Fig 10.** Typical Gate Charge Vs. Gate-to-Source Voltage 

**==> picture [411 x 187] intentionally omitted <==**

**----- Start of picture text -----**<br>
 100<br>0.50<br>0.20<br> 10 - |, a<br>| eer<br>0.10 pee weg<br>$+<— A<br>0.05<br>0.02 PDM<br> 1<br>0.01 t1<br>t2<br>Notes:<br>SINGLE PULSE<br>(THERMAL RESPONSE) 1. Duty factor D = t   / t 1 2<br>2. Peak T J = P DM x  ZthJA + TA<br>0.1<br>0.00001 0.0001 0.001 0.01 0.1  1  10  100<br>t  , Rectangular Pulse Duration (sec)1<br>thJA<br>(Z        )<br>Thermal Response<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 

2015-9-30 

5 

~~Cinfineon~~ 

AUIRF7316Q ~~LL~~ 

**SO-8 Package Outline** (Dimensions are shown in millimeters (inches) 

**==> picture [427 x 329] intentionally omitted <==**

**----- Start of picture text -----**<br>
INCHES MILLIMETERS<br>DIM<br>D _" B ae——}—— MIN MAX MIN MAX<br>A 5 | a A .0532 .0688 1.35 1.75<br>ee A1 .0040 .0098 0.10 0.25<br>a b .013 .020 0.33 0.51<br>6 | 8 7 6 5 H ee cD .0075.189 .0098.1968 0.194.80 0.255.00<br>E<br>1 2 3 4 0.25 [.010]  A > E .1497 .1574 > 3.80 4.00<br>e .050  BASIC 1.27  BASIC<br>|<br>ee e 1 .025  BASIC 0.635  BASIC<br>= ee<br>> H .2284 .2440 5.80 6.20<br>6X e JL > K .0099 .0196 0.25 0.50<br>a L .016 .050 0.40 1.27<br>ee y  0°  8°  0°  8°<br>e1 K x 45°<br>A<br>A C<br>y<br>0.10 [.004]<br>8X b A1 8X L 8X c<br>0.25 [.010]  C A B 7<br>N O T E S : F O O T P R I N T<br>1 .   D I M E N S I O N I N G  &  T O L E R A N C I N G  P E R  A S M E  Y 1 4 . 5 M - 1 9 9 4 . 8 X  0 . 7 2  [ . 0 2 8 ]<br>2 .   C O N T R O L L I N G  D I M E N S I O N :  M I L L I M E T E R<br>3 .   D I M E N S I O N S  A R E  S H O W N  I N  M I L L I M E T E R S  [ I N C H E S ] .<br>4 .   O U T L I N E  C O N F O R M S  T O  J E D E C  O U T L I N E  M S - 0 1 2 A A .<br>ooo<br>5     M |    D I MO LEDN  PS RI OONT DR UO SE I OS  NN SO  NT  I NO TC TL OU  ED EX  MC EOELDD 0 P. 1R5O [T. 0R0U6 S] .I O N S . 6 . 4 6  [ . 2 5 5 ]<br>6    D I M E N S I O N  D O E S  N O T  I N C L U D E  M O L D  P R O T R U S I O N S .<br>     M O L D  P R O T R U S I O N S  N O T  T O  E X C E E D  0 . 2 5  [ . 0 1 0 ] .<br>7    D I M E N S I O N  I S  T H E  L E N G T H  O F  L E A D  F O R  S O L D E R I N G  T O<br>     A  S U B S T R A T E . , OJOOUUO }<br>3 X  1 . 2 7  [ . 0 5 0 ] 8 X  1 . 7 8  [ . 0 7 0 ]<br>**----- End of picture text -----**<br>


## **SO-8 Part Marking Information** 

6 

2015-9-30 

~~Cinfineon~~ 

AUIRF7316Q ~~LL~~ 

**SO-8 Tape and Reel** (Dimensions are shown in millimeters (inches) 

## TERMINAL NUMBER 1 

**==> picture [309 x 115] intentionally omitted <==**

**----- Start of picture text -----**<br>
12.3 ( .484 )<br>11.7 ( .461 )<br>8.1 ( .318 )<br>7.9 ( .312 ) FEED DIRECTION<br>**----- End of picture text -----**<br>


NOTES: 

1.   CONTROLLING DIMENSION : MILLIMETER. 

2.   ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 

3.   OUTLINE CONFORMS TO EIA-481 & EIA-541. 

**==> picture [274 x 120] intentionally omitted <==**

**----- Start of picture text -----**<br>
 330.00<br>(12.992)<br>  MAX.<br>14.40 ( .566 )<br>12.40 ( .488 )<br>**----- End of picture text -----**<br>


NOTES : 

1. CONTROLLING DIMENSION : MILLIMETER. 

2. OUTLINE CONFORMS TO EIA-481 & EIA-541. 

2015-9-30 

7 

~~“ee~~ 

AUIRF7316Q ~~& &»«=€=5 =a~~ 

## **Qualification Information** 

|**Qualification Information**|**Qualification Information**|||
|---|---|---|---|
|**Qualification Level**||Automotive<br>(per AEC-Q101)||
|||Comments: This part number(s) passed Automotive qualification. Infineon’s<br>Industrial and Consumer qualification level is granted by extension of the higher<br>Automotive level.||
|**Moisture Sensitivity Level**||SO-8|MSL1|
|**ESD**|Machine Model|Class M2 (+/- 200V)† <br>AEC-Q101-002||
||Human Body Model|Class H1A (+/- 500V)†<br>AEC-Q101-001||
||Charged Device Model|Class C5 (+/- 2000V)† <br>AEC-Q101-005||
|**RoHS Compliant**||Yes||



- Highest passing voltage. 

## **Revision History** 

|**Date**|**Comments**|
|---|---|
|4/3/2014|<br>Added  "Logic Level Gate Drive" bullet in the features section on page 1<br><br>Updated part marking on page 6.<br><br>Updated data sheet with new IR corporate template|
|9/30/2015|<br>Updated datasheet with corporate template<br><br>Corrected orderingtable onpage 1.|



## **Published by Infineon Technologies AG 81726 München, Germany** 

**© Infineon Technologies AG 2015 All Rights Reserved.** 

## **IMPORTANT NOTICE** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office (www.infineon.com). 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 

8 

2015-9-30