AUIRF7313QTR

AUIRF7313Q ~~—~~ 

**AUTOMOTIVE GRADE** 

## ~~infineon~~ 

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Features S1 1 8 D1 VDSS  30V<br> Advanced Planar Technology  G1 2 7 D1 RDS(on)   typ.  23m <br> Dual N Channel MOSFET  S2 3 6 D2<br> Low On-Resistance  G2 4 5 D2                 max.  29m <br> Logic Level Gate Drive  Top View ID   6.9A<br> Dynamic dv/dt Rating  b==<br> 175°C Operating Temperature<br> Fast Switching<br> Lead-Free, RoHS Compliant<br> Automotive Qualified *<br>Description  SO-8<br>AUIRF7313Q<br>Specifically designed for Automotive applications, this cellular<br>design of HEXFET® Power MOSFETs utilizes the latest<br>processing techniques to achieve low on-resistance per silicon  G  D  S<br>area. This benefit combined with the fast switching speed and<br>Gate  Drain  Source<br>ruggedized device design that HEXFET power MOSFETs are  ee<br>ee<br>well known for, provides the designer with an extremely efficient<br>and reliable device for use in Automotive and a wide variety of<br>other applications.<br>Standard Pack<br>Base part number  Package Type  Orderable Part Number<br>Form  Quantity<br>fp AUIRF7313Q  SO-8  Tape and Reel   4000  AUIRF7313QTR<br>Absolute Maximum Ratings<br>Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.   These are stress<br>ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not<br>implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance<br>and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless<br>otherwise specified.<br>**----- End of picture text -----**<br>


|otherwise specified.||||
|---|---|---|---|
|**Symbol**|**Parameter**|**Max.**|**Units**|
|VDS|Drain-Source Voltage|30|V|
|ID@ TA= 25°C|Continuous Drain Current, VGS@ 10V|6.9|A|
|ID @TA= 70°C|Continuous Drain Current,VGS @10V|5.8||
|IDM|Pulsed Drain Current|58||
|PD@TA= 25°C|Maximum Power Dissipation|2.4|W|
||Linear Derating Factor|0.02|W/°C|
|VGS|Gate-to-SourceVoltage|± 20|V|
|EAS|Single Pulse Avalanche Energy (ThermallyLimited) |450|mJ|
|dv/dt|Peak Diode Recoverydv/dt|3.6|V/ns|
|TJ<br>TSTG|Operating Junction and<br>StorageTemperatureRange|-55  to + 175|°C|



**Thermal Resistance Symbol Parameter Typ. Max. Units** RJL Junction-to-Drain Lead ––– 20 °C/W ~~ee~~ RJA Junction-to-Ambient  ––– 62.5 HEXFET® is a registered trademark of Infineon. ***** Qualification standards can be found at www.infineon.com 1 2015-9-30 ~~cS ee~~ 

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**Static @ TJ = 25°C (unless otherwise specified)** 

|**Parameter**<br>**Min.**<br>**Typ. Max. Units**<br>**Conditions**<br>V(BR)DSS<br>Drain-to-Source Breakdown Voltage<br>30<br>–––<br>–––<br>V<br>VGS =0V, ID =250µA<br>V(BR)DSS/TJ<br>Breakdown Voltage Temp. Coefficient<br>–––<br>0.03<br>–––<br>V/°C Reference to 25°C,ID= 1mA<br>RDS(on)<br>Static Drain-to-Source On-Resistance<br>–––<br>23<br>29<br>m~~~~VGS= 10V,ID= 6.9A<br>–––<br>32<br>46<br>VGS= 4.5V,ID= 5.5A<br>VGS(th)<br>Gate Threshold Voltage<br>1.0<br>–––<br>3.0<br>V<br>VDS= VGS,ID= 250µA<br>gfs<br>Forward Trans conductance<br>7.5<br>–––<br>–––<br>S<br>VDS =15V, ID =3.5A<br>IDSS<br>Drain-to-Source Leakage Current<br>–––<br>–––<br>1.0<br>µAVDS =24V, VGS =0V<br>–––<br>–––<br>25<br>VDS =24V,VGS =0V,TJ =125°C<br>IGSS<br>Gate-to-Source Forward Leakage<br>–––<br>–––<br>100<br>nAVGS =20V<br>Gate-to-Source Reverse Leakage<br>–––<br>–––<br>-100<br>VGS = -20V<br>~~ee~~<br>~~ny ttt) tr tn~~<br>~~es~~<br>~~nDQO~~<br>~~(O~~<br>~~es~~<br>~~rs ts ts QO (~~<br>~~a~~<br>~~ee ee~~<br>~~| fT Pe~~<br>~~eses~~<br>~~ts I ts( (~~<br>~~es~~<br>~~TD(QO~~<br>~~ee ee ee PO~~<br>~~a~~<br>~~es ne~~<br>~~Po~~<br>~~oS~~<br>~~Oi~~|
|---|
|**Dynamic  Electrical Characteristics @ TJ = 25°C (unless otherwise specified)**|
|Qg<br>Total Gate Charge<br>–––<br>22<br>33<br>nC<br>ID= 3.5A<br>Qgs<br>Gate-to-Source Charge<br>–––<br>2.6<br>3.9<br>VDS= 15V<br>Qgd<br>Gate-to-Drain Charge<br>–––<br>6.8<br>10<br>VGS= 10V<br>td(on)<br>Turn-On Delay Time<br>–––<br>3.7<br>–––<br>ns<br>VDD= 15V<br>tr<br>RiseTime<br>–––<br>7.3<br>–––<br>ID= 3.5A<br>td(off)<br>Turn-Off DelayTime<br>–––<br>21<br>–––<br>RG= 6.8<br>tf<br>Fall Time<br>–––<br>11<br>–––<br>VGS= 10V<br>Ciss<br>Input Capacitance<br>–––<br>755<br>–––<br>pF<br>VGS= 0V<br>Coss<br>Output Capacitance<br>–––<br>310<br>–––<br>VDS= 25V<br>Crss<br>ReverseTransferCapacitance<br>–––<br>120<br>–––<br>ƒ= 1.0MHz<br>**Diode Characteristics**<br>**Parameter **<br>**Min.**<br>**Typ. Max.Units**<br>**Conditions**<br>~~es~~<br>~~es~~<br>~~es~~<br>~~es~~<br>~~eses~~<br>~~es~~<br>~~es~~<br>~~es~~<br>~~es~~<br>~~esI~~|
|IS<br>Continuous Source Current<br>–––<br>–––<br>3.0<br>A<br>MOSFET symbol<br>(Body Diode)<br>showing  the<br>ISM<br>Pulsed Source Current<br>–––<br>–––<br>58<br>integral reverse<br>(Body Diode)<br>p-n junction diode.<br>VSD<br>Diode Forward Voltage<br>–––<br>–––<br>1.0<br>V<br>TJ =25°C,IS=3.5A,VGS =0V<br>trr<br>Reverse Recovery Time<br>–––<br>27<br>40<br>nsTJ= 25°C ,IF= 3.5A,<br>Qrr<br>Reverse RecoveryCharge<br>–––<br>43<br>65<br>nC   di/dt = 100A/µs<br>~~a~~<br>@<br>~~es~~<br>~~TD(I~~<br>~~(OO~~<br>~~esSD~~<br>~~es~~|



**Notes:** 

 Repetitive rating;  pulse width limited by max. junction temperature. 

-  Limited by TJmax, Starting TJ = 25°C, L = 76mH, RG = 50, IAS = 3.5A VGS =10V. Part not recommended for use above  this value. 

- ISD 3.5A, di/dt 590A/µs, VDD V(BR)DSS, TJ  175°C. 

-  Pulse width 400µs; duty cycle  2%. 

-   When mounted on 1 inch square  copper board. 

-  R is measured at TJ of approximately 90°C. 

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100<br>100<br>TOP           VGS15V T60µs  Pj = 175°CULSE WIDTH  TOP           VGS15V10V<br>10V 7.0V<br>7.0V 6.0V<br>6.0V 4.5V<br>4.5V 3.5V<br>10 3.5V 3.0V BOTTOM 3.0V 2.8V<br>BOTTOM 2.8V<br>10<br>1<br>2.8V<br>2.8V<br>60µs  PULSE WIDTH Tj = 25°C =| 1 =&<br>0.1<br>0.1 1 10 100<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>VDS, Drain-to-Source Voltage (V)<br>Fig. 1  Typical Output Characteristics  Fig. 2  Typical Output Characteristics<br>100<br>2.0<br>ID = 6.9A<br>V GS  = 10V<br>10<br>1.5<br>TE TJ = 175°C<br>1 TJ = 25°C<br>1.0<br>V DS  = 15V<br>60µs PULSE WIDTH<br>0.1 ifsLl<br>0.5<br>1 2 3 4 5 6 7<br>-60 -20 20 60 100 140 180<br>VGS, Gate-to-Source Voltage (V) TJ , Junction Temperature (°C)<br>Fig. 3  Typical Transfer Characteristics Fig. 4  Normalized On-Resistance vs. Temperature<br>10000 VGS   = 0V,       f = 1 MHZ 14.0<br>Ciss    = C gs  + Cgd,  C ds  SHORTED ID= 3.5A<br>C Crss  oss    = C = Cds gd + Cgd 12.010.0 VVDS DS = 24V= 15V<br>1000 Ciss VDS= 6.0V<br>Coss 8.0<br>C rss 6.0<br>100<br>4.0<br>=] EA<br>2.0<br>10 SUNT 0.0 BRR<br>1 10 100 0 5 10 15 20 25 30<br>VDS, Drain-to-Source Voltage (V)  QG,  Total Gate Charge (nC)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>ID, Drain-to-Source Current (A)<br>ID, Drain-to-Source Current (A)<br>ID, Drain-to-Source Current (A)<br>VGS, Gate-to-Source Voltage (V)<br>C, Capacitance (pF)<br>**----- End of picture text -----**<br>


**Fig. 4** Normalized On-Resistance vs. Temperature 

**Fig 6.** Typical Gate Charge vs. Gate-to-Source Voltage 

**Fig 5.** Typical Capacitance vs. Drain-to-Source Voltage 3 ~~= sha~~ 

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100 1000<br>OPERATION IN THIS AREA<br>LIMITED BY RDS(on)<br>a 100<br>TJ = 175°C Pa ei Mea 1ms 100µs<br>10<br>10 10ms<br>ia 1 eee<br>TJ = 25°C<br>1<br>DC<br>0.1 Tc = 25°C<br>Tj = 175°C<br>V GS  = 0V Single Pulse<br>0.1 0.01<br>0.3 0.5 0.7 0.9 1.1 1.3 1.5 0.10 1 10 100<br>Het} «= PSE<br>VSD, Source-to-Drain Voltage (V) VDS, Drain-to-Source Voltage (V)<br>Fig. 7  Typical Source-to-Drain Diode Forward Voltage  Fig 8.   Maximum Safe Operating Area<br>7 2000<br>ID<br>Sa<br>6 TOP           1.0A<br>1600<br>  1.6A<br>5 BOTTOM   3.5A<br>1200<br>4<br>pt} | NY \ x<br>3 800<br>SeeeNe JNU<br>2<br>Pp PN SN UTT<br>400<br>1<br>0 PEP 0 JTRS Se<br>25 50 75 100 125 150 175 25 50 75 100 125 150 175<br> TA , Ambient Temperature (°C) Starting TJ , Junction Temperature (°C)<br>EAS , Single Pulse Avalanche Energy (mJ)<br>ID,  Drain Current (A)<br>ISD, Reverse Drain Current (A) ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 8.** Maximum Safe Operating Area 

**Fig 9.** Maximum Drain Current vs. Case Temperature 

**Fig 10.** Maximum Avalanche Energy  vs. Drain Current 

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100<br>D = 0.50<br>10 0.20<br>0.10<br>0.05<br>0.02<br>1<br>0.01<br>0.1<br>ii vi a AN<br>0.01<br>BN 2 af<br>Notes:<br>0.001 SINGLE PULSE 1. Duty Factor D = t1/t2<br>( THERMAL RESPONSE )<br>2. Peak Tj = P dm x Zthja + TA<br>Ceesai emt<br>0.0001<br>1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100<br>t1 , Rectangular Pulse Duration (sec)<br>Thermal Response ( Z  thJA ) °C/W<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 

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80 70<br>ID = 3.5A<br>70 60<br>VGS= 4.5V<br>60 See 50 Se<br>50<br>40<br>40 are CRC T = 125°C<br>J<br>30<br>30<br>er LANA<br>20<br>20 a V GS=  10V PINT T FF J = 25°C<br>FFP 10 cop<br>10<br>0 4 8 12 16 20<br>0 10 20 30 40 50 60<br>VGS, Gate-to-Source Voltage (V)<br>ID , Drain Current (A)<br>)<br>m<br> <br>RDS ( on) , Drain-to-Source On Resistance (<br>)<br>RDS(on),  Drain-to -Source On Resistance ( m<br>**----- End of picture text -----**<br>


**Fig 12.** Typical On-Resistance Vs. Drain Current 

**Fig 13.** Typical On-Resistance Vs. Gate Voltage 

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~~Cinfir~~ 

## AUIRF7313Q ~~_~~ 

**Fig 14.** Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET[® ] Power MOSFETs 

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15V<br>L DRIVER<br>VDS<br>R G D.U.T +<br>- [V][DD]<br>IAS<br>20V<br>aeJL tp Y 0.01 |<br>**----- End of picture text -----**<br>


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V(BR)DSS<br>< tp ><br>IAS<br>**----- End of picture text -----**<br>


**Fig 15a.** Unclamped Inductive Test Circuit 

**Fig 15b.** Unclamped Inductive Waveforms 

**Fig 16a.** Switching Time Test Circuit 

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L<br>VCC<br>DUT<br>0<br>1K<br>**----- End of picture text -----**<br>


**Fig 17a.** Gate Charge Test Circuit 

**Fig 16b.** Switching Time Waveforms 

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Id<br>Vds i<br>Vgs<br>i<br>'<br>I<br>f<br>'{<br>!{<br>Vgs(th)<br>! t<br>|t —_ !1 '! 'i '1<br>Qgs1 Qgs2 Qgd Qgodr<br>**----- End of picture text -----**<br>


**Fig 17b.** Gate Charge Waveform 

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**SO-8 Package Outline** (Dimensions are shown in millimeters (inches) 

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INCHES MILLIMETERS<br>DIM<br>~ D _ B aee MIN MAX MIN MAX<br>A 5 | ee A .0532 .0688 ee 1.35 ee 1.75<br>ee A1 .0040 .0098 0.10 0.25<br>h E 6 | 8 7 6 5 H eees>) cbD .0075.013.189 .0098.020.1968 ee 0.190.334.80 ee 0.250.515.00<br>0.25 [.010]  A E .1497 .1574 3.80 4.00<br>1 2 3 4 es<br>e .050  BASIC 1.27  BASIC<br>|<br>ee e 1 .025  BASIC 0.635  BASIC<br>= — J<br>es H .2284 .2440 5.80 6.20<br>6X e Jk es K .0099 .0196 0.25 0.50<br>es L .016 .050 0.40 1.27<br>-> y  0°  8° ee  0° eeJ  8°<br>e1 K x 45°<br>A<br>A C<br>y<br>0.10 [.004]<br>8X b A1 8X L 8X c<br>0.25 [.010]  C A B 7<br>N O T E S : F O O T P R I N T<br>1 .   D I M E N S I O N I N G  &  T O L E R A N C I N G  P E R  A S M E  Y 1 4 . 5 M - 1 9 9 4 . 8 X  0 . 7 2  [ . 0 2 8 ]<br>2 .   C O N T R O L L I N G  D I M E N S I O N :  M I L L I M E T E R<br>3 .   D I M E N S I O N S  A R E  S H O W N  I N  M I L L I M E T E R S  [ I N C H E S ] .<br>4 .   O U T L I N E  C O N F O R M S  T O  J E D E C  O U T L I N E  M S - 0 1 2 A A .<br>, OOOO<br>5     M |    D I MO LEDN  PS RI OONT DR UO SE I OS  NN SO  NT  I NO TC TL OU  ED EX  MC EOELDD 0 P. 1R5O [T. 0R0U6 S] .I O N S . 6 . 4 6  [ . 2 5 5 ]<br>6    D I M E N S I O N  D O E S  N O T  I N C L U D E  M O L D  P R O T R U S I O N S .<br>     M O L D  P R O T R U S I O N S  N O T  T O  E X C E E D  0 . 2 5  [ . 0 1 0 ] .<br>7    D I M E N S I O N  I S  T H E  L E N G T H  O F  L E A D  F O R  S O L D E R I N G  T O<br>     A  S U B S T R A T E . , OJOOUUO }<br>3 X  1 . 2 7  [ . 0 5 0 ] 8 X  1 . 7 8  [ . 0 7 0 ]<br>**----- End of picture text -----**<br>


## **SO-8 Part Marking Information** 

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AUIRF7313Q ~~LL~~ 

**SO-8 Tape and Reel** (Dimensions are shown in millimeters (inches) 

## TERMINAL NUMBER 1 

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12.3 ( .484 )<br>11.7 ( .461 )<br>8.1 ( .318 )<br>7.9 ( .312 ) FEED DIRECTION<br>**----- End of picture text -----**<br>


NOTES: 

1.   CONTROLLING DIMENSION : MILLIMETER. 

2.   ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 

3.   OUTLINE CONFORMS TO EIA-481 & EIA-541. 

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 330.00<br>(12.992)<br>  MAX.<br>14.40 ( .566 )<br>12.40 ( .488 )<br>**----- End of picture text -----**<br>


NOTES : 

1. CONTROLLING DIMENSION : MILLIMETER. 

2. OUTLINE CONFORMS TO EIA-481 & EIA-541. 

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AUIRF7313Q ~~& &»«=€=5 =a~~ 

## **Qualification Information** 

|**Qualification Information**|**Qualification Information**|||
|---|---|---|---|
|**Qualification Level**||Automotive<br>(per AEC-Q101)||
|||Comments: This part number(s) passed Automotive qualification. Infineon’s<br>Industrial and Consumer qualification level is granted by extension of the higher<br>Automotive level.||
|**Moisture Sensitivity Level**||SO-8|MSL1|
|**ESD**|Machine Model|Class M1B (+/- 100V)† <br>AEC-Q101-002||
||Human Body Model|Class H1A (+/- 500V)†<br>AEC-Q101-001||
||Charged Device Model|Class C5 (+/- 2000V)† <br>AEC-Q101-005||
|**RoHS Compliant**||Yes||



- Highest passing voltage. 

|**Date**|**Comments**|
|---|---|
|3/27/2014|<br>Added  "Logic Level Gate Drive" bullet in the features section on page 1<br><br>Updated part marking on page 7.<br><br>Updated data sheet with new IR corporate template|
|9/30/2015|<br>Updated datasheet with corporate template<br><br>Corrected orderingtable onpage 1.|



## **Published by Infineon Technologies AG 81726 München, Germany** 

**© Infineon Technologies AG 2015 All Rights Reserved.** 

## **IMPORTANT NOTICE** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 

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For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office (www.infineon.com). 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 

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