AUIRF7309QTR
Dual MOSFET, Complementary N and P Channel, 30 V, 30 V, 4 A, 4 A, 0.05 ohm
- Manufacturer: INFINEON
- Product type: Dual MOSFETs
- Transistor Polarity:N and P Channel; Continuous Drain Current Id:4A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.05ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage V
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (17-Jan-2023)
- No. of Pins: 8Pins
- Channel Type: Complementary N and P Channel
- Product Range: -
- Qualification: AEC-Q101
- Transistor Case Style: SOIC
- Operating Temperature Max: 150°C
- Power Dissipation N Channel: 1.4W
- Power Dissipation P Channel: 1.4W
- Drain Source Voltage Vds N Channel: 30V
- Drain Source Voltage Vds P Channel: 30V
- Continuous Drain Current Id N Channel: 4A
- Continuous Drain Current Id P Channel: 4A
- Drain Source On State Resistance N Channel: 0.05ohm
- Drain Source On State Resistance P Channel: 0.05ohm
| Delivery and price | |
|---|---|
| Units per pack | 500 |
| Price | 0.983 € |
| Current stock | 10+ |
| Lead time | 30 days |
**AUTOMOTIVE GRADE** ## ~~Cinfineon~~ ## AUIRF7309Q ~~_——~~ ## **Features** **==> picture [537 x 247] intentionally omitted <==** **----- Start of picture text -----**<br> N-CHANNEL MOSFET N-CH P-CH<br> Advanced Planar Technology S1 1 8 D1<br> Low On-Resistance G1 2 7 D1 VDSS 30V -30V<br> Logic Level Gate Drive S2 3 6 D2<br> Dual N and P Channel MOSFET<br> Dynamic dv/dt Rating G2 P-CHANNEL MOSFET4 5 D2 RDS(on) max. 0.05 0.10 <br> 150°C Operating Temperature<br>Top View ID 4.7A -3.5A<br> Fast Switching<br> Lead-Free, RoHS Compliant<br> Automotive Qualified *<br>Description<br>Specifically designed for Automotive applications, this cellular<br>design of HEXFET® Power MOSFETs utilizes the latest SO-8<br>processing techniques to achieve low on-resistance per silicon AUIRF7309Q<br>area. This benefit combined with the fast switching speed and<br>ruggedized device design that HEXFET power MOSFETs are<br>well known for, provides the designer with an extremely efficient G D S<br>and reliable device for use in Automotive and a wide variety of Gate Drain Source<br>a<br>other applications.<br>**----- End of picture text -----**<br> **Standard Pack Base part number Package Type Orderable Part Number Form Quantity** ~~—_———~~ AUIRF7309Q SO-8 Tape and Reel 4000 AUIRF7309QTR **Absolute Maximum Ratings** Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified. |otherwise specified.||||| |---|---|---|---|---| |**Symbol**|**Parameter**|**Max.**||**Units**| |||**N-Channel**|**P-Channel**|| |ID@ TA= 25°C|10 Sec. Pulsed Drain Current, VGS@ 10V|4.7|-3.5|A| |ID@ TA= 25°C|Continuous Drain Current, VGS@ 10V|4.0|-3.0|| |ID@ TA= 70°C|Continuous Drain Current, VGS@ 10V|3.2|-2.4|| |IDM|Pulsed Drain Current|16|-12|| |PD@TA= 25°C|Maximum Power Dissipation|1.4||W| ||Linear Derating Factor|0.011||W/°C| |VGS|Gate-to-Source Voltage|± 20||V| |dv/dt|Peak Diode Recovery dv/dt|6.9|-6.0|V/ns| |TJ<br>TSTG|Operating Junction and<br>StorageTemperatureRange|-55 to + 150||°C| **Thermal Resistance** **Symbol Parameter Typ. Max. Units** RJA Junction-to-Ambient ( PCB Mount, steady state) ––– 90 °C/W ~~ee~~ HEXFET® is a registered trademark of Infineon. ***** Qualification standards can be found at www.infineon.com 1 2015-9-30 ~~————S SS~~ AUIRF7309Q ~~LL~~ ## ~~Cinfineon~~ ## **Static @ TJ = 25°C (unless otherwise specified)** |Qg<br>~~a ~~<br>~~a~~<br>~~ee~~|Total Gate Charge<br> ~~ee~~<br>~~ee~~<br>|N-Ch<br>~~eee~~|–––<br>~~eee~~|–––<br>~~eee~~|25<br>~~eee~~|nC|N-Channel<br>ID= 2.6A, VDS= 16V,VGS= 4.5V<br><br>P-Channel<br>ID= -2.2A,VDS= -16V,VGS= -4.5V| |---|---|---|---|---|---|---|---| |||P-Ch<br>~~eee~~<br>~~eee~~|–––<br>~~eee~~<br>~~eee~~|–––<br>~~eee~~<br>~~eee~~|25<br>~~eee~~<br>~~eee~~||| |Qgs<br> <br>~~a~~<br>~~ee~~<br>~~ee~~|Gate-to-Source Charge<br> ~~ee~~<br>~~ee~~<br>~~ee~~<br>|N-Ch<br>~~eee~~<br>~~eee~~|–––<br>~~eee~~<br>~~eee~~|–––<br>~~eee~~<br>~~eee~~|2.9<br>~~eee~~<br>~~eee~~||| |||P-Ch<br>~~eee~~<br>~~eee~~<br>~~eee~~|–––<br>~~eee~~<br>~~eee~~<br>~~eee~~|–––<br>~~eee~~<br>~~eee~~<br>~~eee~~|2.9<br>~~eee~~<br>~~eee~~<br>~~eee~~||| |Qgd<br> <br>~~a ~~<br>~~ee~~<br>~~ee~~<br>~~a~~|Gate-to-Drain Charge<br> ~~ee~~<br> ~~ee~~<br>~~ee~~<br>~~ee~~|N-Ch<br>~~eee~~<br>~~eee~~<br>~~eee~~|–––<br>~~eee~~<br>~~eee~~<br>~~eee~~|–––<br>~~eee~~<br>~~eee~~<br>~~eee~~|7.9<br>~~eee~~<br>~~eee~~<br>~~eee~~||| |||P-Ch<br>~~eee~~<br>~~eee~~<br>~~eee~~|–––<br>~~eee~~<br>~~eee~~<br>~~eee~~|–––<br>~~eee~~<br>~~eee~~<br>~~eee~~|9.0<br>~~eee~~<br>~~eee~~<br>~~eee~~||| |td(on)<br> <br>~~ee ~~<br>~~ee~~<br>~~a~~<br>~~ee~~|Turn-On Delay Time<br> ~~ee~~<br> ~~ee~~<br>~~ee~~<br>~~ee eee~~<br>|N-Ch<br>~~eee~~<br>~~eee~~<br>~~eee~~|–––<br>~~eee~~<br>~~eee~~<br>~~eee~~|6.8<br>~~eee~~<br>~~eee~~<br>~~eee~~|–––<br>~~eee~~<br>~~eee~~<br>~~eee~~|ns|N-Channel<br>VDD= 10V,ID= 2.6A,RG= 6.0<br>RD= 3.8<br>P-Channel<br>VDD= -10V,ID= -2.2A,RG= 6.0<br>RD= 4.5| |||P-Ch<br>~~eee~~<br>~~eee~~<br>~~eee~~<br>|–––<br>~~eee~~<br>~~eee~~<br>~~eee~~<br>|11<br>~~eee~~<br>~~eee~~<br>~~eee~~<br>|–––<br>~~eee~~<br>~~eee~~<br>~~eee~~<br>||| |tr<br> <br>~~ee ~~<br>~~a~~<br>~~ee~~|Rise Time<br> ~~ee~~<br> ~~ee~~<br>~~ee eee~~<br>|N-Ch<br>~~eee~~<br>~~eee~~<br>~~eee~~<br>|–––<br>~~eee~~<br>~~eee~~<br>~~eee~~<br>|21<br>~~eee~~<br>~~eee~~<br>~~eee~~<br>|–––<br>~~eee~~<br>~~eee~~<br>~~eee~~<br>||| |||P-Ch<br>~~eee~~<br>~~eee~~<br>|–––<br>~~eee~~<br>~~eee~~<br>|17<br>~~eee~~<br>~~eee~~<br>|–––<br>~~eee~~<br>~~eee~~<br>||| |td(off)<br> <br>~~a~~<br>~~ee~~|Turn-Off Delay Time<br> ~~ee~~<br>~~ee eee~~<br>~~eee~~|N-Ch<br>~~eee~~<br>~~eee~~<br>~~ee~~|–––<br>~~eee~~<br>~~eee~~<br>~~ee~~|22<br>~~eee~~<br>~~eee~~<br>~~ee~~|–––<br>~~eee~~<br>~~eee~~<br>~~ee~~||| |||P-Ch<br>~~eee~~<br>~~ee~~|–––<br>~~eee~~<br>~~ee~~|25<br>~~eee~~<br>~~ee~~|–––<br>~~eee~~<br>~~ee~~||| |tf<br>~~ee~~|Fall Time<br>~~ee eee~~<br>~~eee~~|N-Ch<br>~~eee~~<br>~~ee~~|–––<br>~~eee~~<br>~~ee~~|7.7<br>~~eee~~<br>~~ee~~|–––<br>~~eee~~<br>~~ee~~||| |||P-Ch|–––|18|–––||| |LD|Internal Drain Inductance|N-P|–––|4.0|–––|nH|Between lead, 6mm(0.25n) from<br>package and center of die contact| |LS<br>~~a~~|Internal Source Inductance<br>~~ee~~|N-P<br>~~eee~~|–––<br>~~eee~~|6.0<br>~~eee~~|–––<br>~~eee~~||| |Ciss<br>~~a~~<br>~~a~~|Input Capacitance<br>~~ee~~<br>~~ee~~|N-Ch<br>~~eee~~|–––<br>~~eee~~|520<br>~~eee~~|–––<br>~~eee~~|pF|N-Channel<br>VGS= 0V,VDS= 15V,ƒ = 1.0MHz<br><br>P-Channel<br>VGS= 0V,VDS= -15V,ƒ = 1.0MHz| |||P-Ch<br>~~eee~~<br>~~eee~~|–––<br>~~eee~~<br>~~eee~~|440<br>~~eee~~<br>~~eee~~|–––<br>~~eee~~<br>~~eee~~||| |Coss<br>~~a~~<br>~~a~~<br>~~ee~~|Output Capacitance<br>~~ee ~~<br>~~ee~~<br>~~ee~~|N-Ch<br> ~~eee~~<br>~~eee~~|–––<br>~~eee~~<br>~~eee~~|180<br>~~eee~~<br>~~eee~~|–––<br>~~eee~~<br>~~eee~~||| |||P-Ch<br>~~eee~~<br>~~eee~~|–––<br>~~eee~~<br>~~eee~~|200<br>~~eee~~<br>~~eee~~|–––<br>~~eee~~<br>~~eee~~||| |Crss<br>~~a ~~<br>~~ee~~|Reverse Transfer Capacitance<br> ~~ee ~~<br>~~ee~~|N-Ch<br> ~~eee~~<br>~~eee~~|–––<br>~~eee~~<br>~~eee~~|72<br>~~eee~~<br>~~eee~~|–––<br>~~eee~~<br>~~eee~~||| |||P-Ch<br>~~eee~~|~~eee~~|93<br>~~eee~~|–––<br>~~eee~~||| |**Diode Characteristics**<br>~~ee ee~~<br>~~eee~~|||||||| ||**Parameter**||**Min.**<br>~~EE~~|**Typ.**<br>~~EE~~|**Max. Units**<br>~~EE~~|**Max. Units**|**Conditions**| |IS <br>~~e~~|Continuous Source Current (Body Diode)<br>~~ee~~|N-Ch<br>~~e~~|–––<br>~~e~~<br>~~EE~~|–––<br>~~e~~<br>~~EE~~|1.8<br>~~e~~<br>~~EE~~|A<br>~~ee~~|~~ee~~| |||P-Ch<br>~~e~~|–––<br>~~e~~<br>~~EE~~|–––<br>~~e~~<br>~~EE~~|-1.8<br>~~e~~<br>~~EE~~||| |ISM <br>~~e~~<br>~~a~~|Pulsed Source Current<br>(BodyDiode)<br>~~ee~~<br>~~a~~|N-Ch<br>~~e~~|–––<br>~~e~~<br>~~EE~~|–––<br>~~e~~<br>~~EE~~|16<br>~~e~~<br>~~EE~~||| |||P-Ch<br>~~rr cs~~|–––<br>~~cs~~|–––<br>~~ees~~|-12<br>~~ee~~||| |VSD<br>~~a~~|Diode Forward Voltage<br>~~a~~|N-Ch<br>~~rr cs~~|–––<br>~~cs~~|–––<br>~~ees~~|1.0<br>~~ee~~|V<br>~~ee~~|TJ= 25°C,IS= 1.8A,VGS=0V<br>~~ee~~| |||P-Ch<br>~~rr cs~~|–––<br>~~cs~~|–––<br>~~ees~~|-1.0<br>~~ee~~||TJ= 25°C,IS= -1.8A,VGS=0V<br>~~ee~~| |trr<br>~~a ~~<br>~~Eee~~<br>~~a~~|Reverse Recovery Time<br> ~~a~~<br>~~Eee~~<br>~~ee~~|N-Ch<br>~~rr cs~~<br>~~Eee~~|–––<br>~~cs ~~<br>~~Eee~~|47<br> ~~ees ~~<br>~~Eee~~|71<br> ~~ee~~<br>~~Eee~~|ns<br>~~ee~~<br>~~eee~~|N-Channel<br>TJ= 25°C ,IF= 2.6A, di/dt = 100A/µs<br>P-Channel<br>TJ= 25°C,IF= -2.2A,di/dt = 100A/µs<br>~~ee~~| |||P-Ch<br>~~Eee~~<br>~~eee~~|–––<br>~~Eee~~<br>~~eee~~|53<br>~~Eee~~<br>~~eee~~|80<br>~~Eee~~<br>~~eee~~||| |Qrr<br>~~a~~|Reverse Recovery Charge<br>~~ee~~|N-Ch<br>~~eee~~|–––<br>~~eee~~|56<br>~~eee~~|84<br>~~eee~~|nC<br>~~eee~~|| |||P-Ch<br>~~eee~~|~~eee~~|66<br>~~eee~~|99<br>~~eee~~||| |ton<br>~~a~~|Forward Turn-On Time<br>~~ee~~|Intrinsic turn-on time is negligible(turn-on is dominated byLS+LD)<br>~~eee~~|||||| **Notes:** - Repetitive rating; pulse width limited by max. junction temperature. (See Fig. 23) - N-Channel ISD 2.4A, di/dt 73A/µs, VDD V(BR)DSS, TJ 150°C. P-Channel ISD -1.8A, di/dt 90A/µs, VDD V(BR)DSS, TJ 150°C - Pulse width 300µs; duty cycle 2%. - When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994 2 2015-9-30 ~~Cinfineon~~ AUIRF7309Q ~~|~~ **N-Channel** **Fig. 1** Typical Output Characteristics TJ = 25°C **Fig. 3** Typical Transfer Characteristics **Fig. 2** Typical Output Characteristics TJ = 150°C **Fig. 4** Normalized On-Resistance vs. Temperature 3 2015-9-30 AUIRF7309Q ~~|~~ **N-Channel** **==> picture [65 x 30] intentionally omitted <==** **----- Start of picture text -----**<br> Cinfineon<br>**----- End of picture text -----**<br> **Fig 5.** Typical Capacitance vs. Drain-to-Source Voltage **Fig. 7** Typical Source-to-Drain Diode Forward Voltage **Fig 6.** Typical Gate Charge vs. Gate-to-Source Voltage **Fig 8.** Maximum Safe Operating Area 2015-9-30 4 ~~Cinfineon~~ AUIRF7309Q ~~|~~ **N-Channel** **Fig 10a.** Switching Time Test Circuit **Fig 9.** Maximum Drain Current vs. Case Temperature **Fig 10b.** Switching Time Waveforms **==> picture [188 x 127] intentionally omitted <==** **----- Start of picture text -----**<br> Id<br>Vds<br>f | Vgs<br>Vgs(th) f o\<br>i—1—<br>‘ gp ! ' 1 H<br>Qgs1 Qgs2 Qgd Qgodr<br>**----- End of picture text -----**<br> **Fig 11a.** Gate Charge Test Circuit **Fig 11b.** Basic Gate Charge Waveform 2015-9-30 5 **Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case AUIRF7309Q ~~|~~ **P-Channel** **==> picture [65 x 30] intentionally omitted <==** **----- Start of picture text -----**<br> Cinfineon<br>**----- End of picture text -----**<br> **Fig. 12** Typical Output Characteristics TJ = 25°C **Fig. 14** Typical Transfer Characteristics **Fig. 13** Typical Output Characteristics TJ = 150°C **Fig. 15** Normalized On-Resistance vs. Temperature 6 2015-9-30 ~~Cinfineon~~ AUIRF7309Q ~~|~~ **P-Channel** **Fig 16.** Typical Capacitance vs. Drain-to-Source Voltage **Fig. 18** Typical Source-to-Drain Diode Forward Voltage **Fig 17.** Typical Gate Charge vs. Gate-to-Source Voltage **Fig 19.** Maximum Safe Operating Area 2015-9-30 7 ~~Cinfi~~ AUIRF7309Q ~~oo~~ **P-Channel** **Fig 20.** Maximum Drain Current vs. Case Temperature **Fig 21a.** Switching Time Test Circuit **Fig 21b.** Switching Time Waveforms **Fig 22a.** Gate Charge Test Circuit **Fig 22b.** Basic Gate Charge Waveform 8 2015-9-30 ~~Cinfi~~ AUIRF7309Q ~~__LL~~ **N and P-Channel** **Fig 23.** Maximum Effective Transient Thermal Impedance, Junction-to-Ambient **Fig 24.** Peak Diode Recovery dv/dt Test Circuit for N & P-Channel HEXFET[® ] Power MOSFETs 9 2015-9-30 ~~Cinfineon~~ AUIRF7309Q ~~LL~~ ## **SO-8 Package Outline** (Dimensions are shown in millimeters (inches) **==> picture [427 x 333] intentionally omitted <==** **----- Start of picture text -----**<br> INCHES MILLIMETERS<br>DIM<br>D _" B ee——}—— MIN MAX ee MIN eee MAX<br>A 5 | a A .0532 .0688 1.35 1.75<br>ee A1 .0040 .0098 0.10 0.25<br>a b .013 .020 0.33 0.51<br>E 6 | 8 7 6 5 H eeee cD .0075.189 .0098.1968 0.194.80 0.255.00<br>1 2 3 4 0.25 [.010] A > E .1497 .1574 > 3.80 4.00<br>e .050 BASIC 1.27 BASIC<br>|<br>e 1 .025 BASIC 0.635 BASIC<br>> H .2284 .2440 5.80 6.20<br>6X e JL > K .0099 .0196 0.25 0.50<br>a L .016 .050 0.40 1.27<br>ee y 0° 8° 0° 8°<br>e1 K x 45°<br>A<br>A C<br>y<br>0.10 [.004]<br>8X b A1 8X L 8X c<br>0.25 [.010] C A B 7<br>N O T E S : F O O T P R I N T<br>1 . D I M E N S I O N I N G & T O L E R A N C I N G P E R A S M E Y 1 4 . 5 M - 1 9 9 4 . 8 X 0 . 7 2 [ . 0 2 8 ]<br>2 . C O N T R O L L I N G D I M E N S I O N : M I L L I M E T E R<br>3 . D I M E N S I O N S A R E S H O W N I N M I L L I M E T E R S [ I N C H E S ] .<br>4 . O U T L I N E C O N F O R M S T O J E D E C O U T L I N E M S - 0 1 2 A A .<br>O ooo<br>5 M | D I MO LEDN PS RI OONT DR UO SE I OS NN SO NT I NO TC TL OU ED EX MC EOELDD 0 P. 1R5O [T. 0R0U6 S] .I O N S . 6 . 4 6 [ . 2 5 5 ]<br>6 D I M E N S I O N D O E S N O T I N C L U D E M O L D P R O T R U S I O N S .<br> M O L D P R O T R U S I O N S N O T T O E X C E E D 0 . 2 5 [ . 0 1 0 ] .<br>7 D I M E N S I O N I S T H E L E N G T H O F L E A D F O R S O L D E R I N G T O<br> A S U B S T R A T E . , OUOUD 3<br>3 X 1 . 2 7 [ . 0 5 0 ] 8 X 1 . 7 8 [ . 0 7 0 ]<br>**----- End of picture text -----**<br> ## **SO-8 Part Marking Information** 10 2015-9-30 ~~Cinfineon~~ AUIRF7309Q ~~LL~~ **SO-8 Tape and Reel** (Dimensions are shown in millimeters (inches) ## TERMINAL NUMBER 1 **==> picture [309 x 115] intentionally omitted <==** **----- Start of picture text -----**<br> 12.3 ( .484 )<br>11.7 ( .461 )<br>8.1 ( .318 )<br>7.9 ( .312 ) FEED DIRECTION<br>**----- End of picture text -----**<br> NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. **==> picture [274 x 120] intentionally omitted <==** **----- Start of picture text -----**<br> 330.00<br>(12.992)<br> MAX.<br>14.40 ( .566 )<br>12.40 ( .488 )<br>**----- End of picture text -----**<br> NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. 11 2015-9-30 ~~“ee~~ AUIRF7309Q ~~& &»«=€=5 =a~~ ## **Qualification Information** |**Qualification Information**|**Qualification Information**||| |---|---|---|---| |**Qualification Level**||Automotive<br>(per AEC-Q101)|| |||Comments: This part number(s) passed Automotive qualification. Infineon’s<br>Industrial and Consumer qualification level is granted by extension of the higher<br>Automotive level.|| |**Moisture Sensitivity Level**||SO-8|MSL1| |**ESD**|Machine Model|N CH: Class M2 (+/- 150V)† <br>AEC-Q101-002<br>P CH: Class M2(+/- 150V)†|| ||Human Body Model|N CH: Class H1A (+/- 500V)†<br>AEC-Q101-001<br>P CH: Class H0 (+/- 250V)†|| ||Charged Device Model|N CH: Class C5 (+/- 2000V)† <br>AEC-Q101-005<br>P CH: Class C5 (+/- 2000V)†|| |**RoHS Compliant**||Yes|| - Highest passing voltage. ## **Revision History** |**Date**|**Comments**| |---|---| |3/28/2014|<br>Added "Logic Level Gate Drive" bullet in the features section on page 1<br><br>Updated data sheet with new IR corporate template| |9/30/2015|<br>Updated datasheet with corporate template<br><br>Corrected orderingtable onpage 1.| **Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2015 All Rights Reserved.** ## **IMPORTANT NOTICE** The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office (www.infineon.com). ## **WARNINGS** Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 12 2015-9-30
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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