AUIRF7304Q

## **AUTOMOTIVE GRADE** 

## **Features** 

Advanced Planar Technology Low On-Resistance Dual P Channel MOSFET 

Dynamic dV/dT Rating Logic Level 150°C Operating Temperature Fast Switching Lead-Free, RoHS Compliant Automotive Qualified* 

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S1 1 8 D1 V -20V<br>(BR)DSS<br>G1 2 7 D1<br>S2 3 6 D2 R  max. 0.090 Ω<br>DS(on)<br>G2 ait 4 5 D2<br>“nape<br>Top View ID -4.3A<br>**----- End of picture text -----**<br>


## **Description** 

Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications. 

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SO-8<br>AUIRF7304Q<br>**----- End of picture text -----**<br>


## **Absolute Maximum Ratings** 

|Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.   These|
|---|
|are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated|
|in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect|
|device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air|
|conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.|
|**Parameter**<br>**Units**<br>ID@ TA= 25°C<br>10 Sec. Pulsed Drain Current, VGS@ -4.5V<br>ID @ TA= 25°C<br>Continuous Drain Current, VGS@ -4.5V<br>A<br>ID@ TA= 70°C<br>Continuous Drain Current, VGS@ -4.5V<br>IDM<br>Pulsed Drain Current<br>PD@TA= 25°C<br>Power Dissipation<br>W<br>Linear Derating Factor<br>W/°C<br>VGS<br>Gate-to-Source Voltage<br>V<br>dv/dt<br>Peak Diode Recovery dv/dt<br>V/ns<br>TJ<br>Operating Junction and<br>°C<br>TSTG<br>Storage Temperature Range<br>**Max.**<br>-4.7<br>-4.3<br>-17<br>-3.4<br>-55  to + 150<br>2.0<br>0.016<br>-5.0<br>± 12<br>~~===.~~<br>~~To~~<br>~~i~~<br>~~oo~~<br>~~OO~~<br>~~oes~~<br>~~oT~~<br>~~EET~~<br>~~LO~~<br>~~a~~<br>~~ee~~<br>~~ee ee~~|
|**Thermal Resistance**|
|**Parameter**<br>**Typ.**<br>**Max.**<br>**Units**<br>RθJA<br>Junction-to-Ambient<br>–––<br>62.5<br>°C/W<br>~~ee~~|



HEXFET[®] is a registered trademark of International Rectifier. 

***** Qualification standards can be found at http://www.irf.com/ 

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**Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

||**Parameter**<br>**Min. Typ. Max. Units**<br>**Conditions**||
|---|---|---|
|V(BR)DSS<br>ΔV(BR)DSS/ΔTJ<br>VGS(th)<br>gfs<br>IDSS<br>IGSS<br>RDS(on)|Drain-to-Source Breakdown Voltage<br>-20<br>–––<br>–––<br>V<br>Breakdown Voltage Temp. Coefficient<br>–––<br>-0.012<br>–––<br>V/°C<br>–––<br>–––<br>0.090<br>–––<br>–––<br>0.140<br>Gate Threshold Voltage<br>-0.70<br>–––<br>-1.5<br>V<br>Forward Transconductance<br>4.0<br>–––<br>–––<br>S<br>Drain-to-Source Leakage Current<br>–––<br>–––<br>-1.0<br>–––<br>–––<br>-25<br>Gate-to-Source Forward Leakage<br>–––<br>–––<br>-100<br>Gate-to-Source Reverse Leakage<br>–––<br>–––<br>100<br>nA<br>μA<br>VDS= -16V, VGS= 0V<br>VDS= -16V, VGS= 0V, TJ= 125°C<br>VGS= 12V<br>VGS= 0V, ID= -250μA<br>Reference to 25°C, ID= -1mA<br>VGS= -4.5V, ID= -2.2A<br>Static Drain-to-Source On-Resistance<br>Ω<br>VGS= -2.7V,ID= -1.8A<br>VDS= VGS, ID= -250μA<br>VDS= -16V, ID= -2.2A<br>VGS= -12V<br>~~GO~~<br>~~Gn~~<br>~~QO QO~~<br>~~es~~<br>~~||~~<br>~~es~~<br>~~GS QO~~<br>~~Gn~~<br>~~GN QO OO~~<br>~~—————~~<br>~~aesa~~||
|**Dynamic  Electrical Characteristics @ TJ = 25°C(unless otherwise specified)**|||
|Qg<br>Qgs<br>Qgd<br>td(on)|**Parameter**<br>**Min. Typ. Max. Units**<br>Total Gate Charge<br>–––<br>–––<br>22<br>Gate-to-Source Charge<br>–––<br>–––<br>3.3<br>Gate-to-Drain("Miller")Charge<br>–––<br>–––<br>9.0<br>Turn-On DelayTime<br>–––<br>8.4<br>–––<br>VGS= -4.5V, See Fig. 6 & 12<br>VDS= -16V<br>VDD= -10V<br>nC<br>**Conditions**<br>ID= -2.2A<br>~~ss~~<br>~~GG~~<br>~~ee~~<br>~~es~~<br>~~ee~~<br>~~es~~<br>~~ee ee~~<br>~~ee~~<br>~~@~~<br>~~ee~~||
|tr<br>td(off)|Rise Time<br>–––<br>26<br>–––<br>Turn-Off DelayTime<br>–––<br>51<br>–––<br>ID= -2.2A<br>RG= 6.0Ω<br>ns<br>~~ee~~<br>~~ee~~||
|tf|Fall Time<br>–––<br>33<br>–––<br>RD= 4.5Ω, See Fig. 10<br>~~ee~~<br>®||
|LD<br>LS<br>Ciss<br>Coss<br>Crss|S<br>D<br>G<br>Internal Drain Inductance<br>–––<br>4.0<br>–––<br>Between lead,<br>nH<br>6mm (0.25in.)<br>Internal Source Inductance<br>–––<br>6.0<br>–––<br>from package<br>and center of die contact<br>Input Capacitance<br>–––<br>610<br>–––<br>Output Capacitance<br>–––<br>310<br>–––<br>Reverse Transfer Capacitance<br>–––<br>170<br>–––<br>VGS= 0V<br>VDS= -15V<br>ƒ= 1.0MHz, See Fig. 5<br>pF<br>~~ra~~<br>~~|~~<br>~~ee~~<br>~~es~~<br>~~ee~~<br>~~es~~<br>~~ee~~||
|**Diode Characteristics**|||
||**Parameter**<br>**Min. Typ. Max. Units**<br>**Conditions**||
|IS<br>ISM|S<br>D<br>G<br>Continuous Source Current<br>(BodyDiode)<br>Pulsed Source Current<br>(BodyDiode)<br>-17<br>–––<br>–––<br>–––<br>–––<br>-2.5<br>A<br>integral reverse<br>p-njunction diode.<br>MOSFET symbol<br>showing  the<br>~~|~~||
|VSD<br>trr<br>Qrr<br>ton|Diode Forward Voltage<br>–––<br>–––<br>-1.0<br>V<br>Reverse RecoveryTime<br>–––<br>56<br>84<br>ns<br>TJ= 25°C,IF= -2.2A<br>Reverse RecoveryCharge<br>–––<br>71<br>110<br>nC<br>di/dt = 100A/μs<br>Forward Turn-On Time<br>Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)<br>TJ= 25°C, IS= -1.8A, VGS= 0V<br>~~Gn~~<br>~~GN~~<br>~~rr~~<br>~~ee~~<br>~~°~~<br>~~a~~||



Pulse width ≤ 300μs; duty cycle ≤ 2%. 

ISD ≤ ≤− ≤ ≤ 

Starting TJ = 25°C, RG = 25 Ω , IAS = -2.2A. 

When mounted  on 1 inch square copper board,  t<10 sec. 

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## **Qualification Information†** 

|**Qualification Information†**<br>**†**|**Qualification Information†**<br>**†**|||
|---|---|---|---|
|**Qualification Level**||Automotive<br>(per AEC-Q101)<br>††||
|||Comments: This part number(s) passed Automotive qualification. IR’s<br>Industrial and Consumer qualification level is granted by extension of the<br>higher Automotive level.||
|**Moisture Sensitivity Level**||SO-8|MSL1|
|**ESD**|Machine Model|Class M1B (+/- 100V)<br>†††<br>AEC-Q101-002||
||Human Body Model|Class H0 (+/- 250V)<br>†††<br>AEC-Q101-001||
||Charged Device<br>Model|Class C5 (+/- 2000V)†††<br>AEC-Q101-005||
|**RoHS Compliant**||Yes||



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100 100<br> TOP         - 7.5V  TOP         - 7.5V<br>- 5.0V - 5.0V<br>- 4.0V or AA oo - 4.0V oe eo<br>                 - 3.5V                  - 3.0V a 7 el                  - 3.5V                  - 3.0V |<br>- 2.5V EE - 2.5V A |<br>                 - 2.0V                  - 2.0V<br> BOTTOM - 1.5V Y/Zc a  BOTTOM - 1.5V a<br>10 10<br>PaAG cI<br>an Ad ae pL ffffon<br>1 1<br>-1.5V<br>| \  -1.5V a) //4y Ae<br> 20μs PULSE WIDTH<br>0.1 AVAYe  T   = 25°CJ rues mone A 0.1 Vd y Pi  T   = 150°CJ<br>0.01 0.1 1 10 100 0.01 0.1 1 10 100<br>-V     , Drain-to-Source Voltage (V)DS -V     , Drain-to-Source Voltage (V)DS<br>Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics<br>100 BSS ES SSS 2.0 PTT<br>ee ee ee ee ee ee<br>ae S———- 1.5 OO UR GR GR GR GU GR GR GRURGE<br>T  = 25°CJ T  = 150°CJ<br>10<br>| yee PEELE EP<br>Sar 4eaeseseses 1.0 ee ttl<br>PA LS ar<br>4 eT ELE<br>1 Yjti| | | ft | cn<br>f= 0.5 PPE EEE<br>a2eeee eee eee SE<br> V     = -15V DS<br>0.11.5 PTTPETA 2.0 2.5 3.0 saatusewors 3.5 couspurse 4.0 4.5 wor 5.0A 0.0-60 PPE -40 -20 0 20 40 EE 60 80 100 bes 120 140 160<br>-V     , Gate-to-Source Voltage (V)GS T   , Junction Temperature (°C)J<br>D D<br>-I   , Drain-to-Source Current (A) -I   , Drain-to-Source Current (A)<br>(Normalized)<br>D<br>-I   , Drain-to-Source Current (A)<br>DS(on)<br>R           ,  Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>


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1500 10<br>V      = 0V,         f = 1MHzGS  I    = -2.2AD<br>C      = C     + C     ,   C     SHORTEDiss         gs         gd         ds  V     =   DS -16V<br>C      = Crss         gd<br>C      = C     + C oss        ds         gd 8<br>\ [ot ft<br>s<br>1000 Nt) Fee<br>6<br>ss<br>NO AU<br>Null l Saaeeny ane<br>ss 4<br>A el eee<br>500<br>2<br>EN a) ee oe ee  Ae<br>0 TF A 0 rere     SEE FIGURE 12<br>1 10 100 0 5 10 15 20 25<br>-V     , Drain-to-Source Voltage (V)DS Q   , Total Gate Charge (nC)G<br>Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs.<br>Drain-to-Source Voltage Gate-to-Source Voltage<br>100  100<br>OPERATION IN THIS AREA LIMITED<br>SSS SSS SS SS =n: BY RDS(on)<br>10 aso|__| T    __|_esep_ J = 150°C achEen ellth<br>T  = 25J °C<br>Sa<br> 10<br>+ 2 a e eAi<br>V ff + J ——— a ee eee 1ms<br>1<br>ap ESSER CEH<br>ael<br>——  a/.eeee SSS<br>my ew eee eee eee  T  TAJ = 25  C = 150  C ° ° N 10ms<br>0.1 al A  1  Single Pulse all<br>0.3 0.6 0.9 1.2 1.5  1  10  100<br>-V     , Source-to-Drain Voltage (V)SD -V     , Drain-to-Source Voltage (V)DS<br>C, Capacitance (pF)<br>GS<br>-V     , Gate-to-Source Voltage (V)<br>SD I   , Drain Current (A) D-<br>-I     , Reverse Drain Current (A)<br>**----- End of picture text -----**<br>


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5.0<br>-<br>+<br>4.0 ~GREEEEEEe<br>PP $ 48  1<br>Sayracor ≤ 0.1 %<br>3.0 PtP [PNET] V<br>HERP Fig 10a. Switching Time Test Circuit<br>2.0<br>VDS<br>PEN 90% —<br>1.0 Pt PT TT TT TN x<br>pi titi titty<br>0.0 pit iT  tt 10% X<br>25 50 75 100 125 150<br>T   , Case TemperatureC (  C)° VGS<br>td(on) tr td(off) tf<br>D<br>-I   , Drain Current (A)<br>**----- End of picture text -----**<br>


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 100<br>D = 0.50<br>nena GREE, cae ee<br>0.20 STeee<br> 10 ee eerwoes<br>0.10<br>0.05<br>eee aati menses 2: ete ee ee<br>0.02<br>PDM<br>0.01<br> 1 = S SINGLE PULSE oTLe CU LL t1<br>(THERMAL RESPONSE) t2<br>aa eeee eeee eeeeee 1. Duty factor D = Notes: t   / t 1 2<br>a 2. Peak T J = P DM x  Z thJA + TA<br>0.1<br>0.0001 0.001 0.01 0.1  1  10  100<br>t  , Rectangular Pulse Duration (sec)1<br>thJA<br>(Z        )<br>Thermal Response<br>**----- End of picture text -----**<br>


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Current Regulator<br>Same Type as D.U.T.<br>50K Ω<br>12V .2 μ F<br>QG .3 μ F<br>QGS QGD ne i D.U.T. +-VDS<br>VGS<br>V Me G -3mA (ay<br>or al IG ID<br>Charge Current Sampling Resistors<br>**----- End of picture text -----**<br>


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D.U.T + Circuit Layout Considerations<br>™    •  Low Stray Inductance<br>®  •   Ground Plane<br> •   Low Leakage Inductance<br>| - Current Transformer<br>+<br>- - +<br>0<br>kK<br>®<br>Re •   dv/dt controlled by Rg +<br>•   -<br>CO •   D.U.T. - Device Under Test<br>‘ > Isp controlled by Duty Factor "D"<br>* Reverse Polarity for P-Channel<br>** Use P-Channel Driver for P-Channel Measurements<br>® Driver Gate Drive<br>P.W.<br>Period D =<br>P.W. | Period _ t<br>t<br>@ D.U.T. ISD Waveform<br>Reverse<br>Recovery Body Diode Forward<br>Current "\ Current di/dt a<br>©) D.U.T. VDS Waveform<br>Diode Recoverydv/dt \ F<br>[,<br>Re-Applied<br>Voltage Body Diode  Forward Drop<br>® Inductor Curent<br>a<br>Ripple  ≤ 5% ]<br>**----- End of picture text -----**<br>


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**SO-8 Package Outline** Dimensions are shown in millimeters (inches) 

## **SO-8 Part Marking** 

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## **SO-8 Tape and Reel** 

Dimensions are shown in millimeters (inches) 

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TERMINAL NUMBER 1<br>**----- End of picture text -----**<br>


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12.3 ( .484 )<br>11.7 ( .461 )<br>8.1 ( .318 )<br>7.9 ( .312 ) FEED DIRECTION<br>TT<br>**----- End of picture text -----**<br>


NOTES: 

1.   CONTROLLING DIMENSION : MILLIMETER. 

2.   ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3.   OUTLINE CONFORMS TO EIA-481 & EIA-541. 

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 330.00<br>(12.992)<br>  MAX.<br>ID |<br>[ V Y<br>14.40 ( .566 )<br>12.40 ( .488 )<br>**----- End of picture text -----**<br>


NOTES : 

1. CONTROLLING DIMENSION : MILLIMETER. 

2. OUTLINE CONFORMS TO EIA-481 & EIA-541. 

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## **Ordering Information** 

|**Base part**<br>**number**|**Package Type**|**Standard Pack**|**Standard Pack**|**Complete Part Number**|
|---|---|---|---|---|
|||**Form**|**Quantity**||
|AUIRF7304Q|SO-8|Tube|95|AUIRF7304Q|
|||Tape and Reel|2500|AUIRF7304QTR|



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Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. Part numbers designated with the “AU” prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and process change notification. All products are sold subject to IR’s terms and conditions of sale supplied at the time of order acknowledgment. 

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