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Illustrative purposes only
AUIRF7103QTR
Dual MOSFET, N Channel, 50 V, 3 A, 0.13 ohm
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- Manufacturer: INFINEON
- Product type: Dual MOSFETs
- Transistor Polarity:Dual N Channel; Continuous Drain Current Id:3A; Drain Source Voltage Vds:50V; On Resistance Rds(on):0.13ohm; Rd; Available until stocks are exhausted Alternative available
- MSL: MSL 1 - Unlimited
- No. of Pins: 8Pins
- Channel Type: N Channel
- Product Range: -
- Qualification: -
- Transistor Case Style: SOIC
- Operating Temperature Max: 175°C
- Power Dissipation N Channel: 2.4W
- Power Dissipation P Channel: -
- Drain Source Voltage Vds N Channel: 50V
- Drain Source Voltage Vds P Channel: -
- Continuous Drain Current Id N Channel: 3A
- Continuous Drain Current Id P Channel: -
- Drain Source On State Resistance N Channel: 0.13ohm
- Drain Source On State Resistance P Channel: -
| Delivery and price | |
|---|---|
| Units per pack | 2000 |
| Price | 0.554 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
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AUTOMOTIVE GRADE<br>AUIRF7103Q<br>infineon<br>Features S1 1 8 D1 VDSS 50V<br> Advanced Planar Technology G1 2 7 D1<br> Dual N Channel MOSFET S2 3 6 D2 RDS(on) max. 130m <br> Low On-Resistance G2 4 5 D2<br> Logic Level Gate Drive Top View ID 3.0A<br>EEE Dynamic dv/dt Rating<br> 175°C Operating Temperature<br> Fast Switching<br> Repetitive Avalanche Allowed up to Tjmax<br> Lead-Free, RoHS Compliant<br> Automotive Qualified *<br>Description SO-8<br>AUIRF7103Q<br>Specifically designed for Automotive applications, this cellular<br>design of HEXFET® Power MOSFETs utilizes the latest<br>processing techniques to achieve low on-resistance per silicon G D S<br>area. This benefit combined with the fast switching speed and<br>Gate Drain Source<br>ruggedized device design that HEXFET power MOSFETs are ee<br>ee<br>well known for, provides the designer with an extremely efficient<br>and reliable device for use in Automotive and a wide variety of<br>other applications.<br>**----- End of picture text -----**<br>
**Standard Pack Base part number Package Type Orderable Part Number Form Quantity** ~~Je~~ AUIRF7103Q SO-8 Tape and Reel 4000 AUIRF7103QTR **Absolute Maximum Ratings** Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
|otherwise specified.||||
|---|---|---|---|
|**Symbol**|**Parameter**|**Max.**|**Units**|
|ID@ TA= 25°C|Continuous Drain Current, VGS@ 4.5V|3.0|A|
|ID @TA= 70°C|Continuous Drain Current,VGS @4.5V|2.5||
|IDM|Pulsed Drain Current|25||
|PD@TA= 25°C|Maximum Power Dissipation|2.4|W|
||Linear Derating Factor|16|W/°C|
|VGS|Gate-to-SourceVoltage|± 20|V|
|EAS|Single Pulse Avalanche Energy (ThermallyLimited) |22|mJ|
|IAR|Avalanche Current|See Fig.19,20, 16b, 16c|A|
|EAR|Repetitive Avalanche Energy ||mJ|
|dv/dt|Peak Diode Recoverydv/dt|12|V/ns|
|TJ<br>TSTG|Operating Junction and<br>StorageTemperatureRange|-55 to + 175|°C|
**Thermal Resistance Symbol Parameter Typ. Max. Units** RJL Junction-to-Drain Lead ––– 20 °C/W ~~—ee~~ RJA Junction-to-Ambient ––– 62.5 HEXFET® is a registered trademark of Infineon. ***** Qualification standards can be found at www.infineon.com
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## ~~Cinfin eon~~
## **Static @ TJ = 25°C (unless otherwise specified)**
|~~es~~|||||||
|---|---|---|---|---|---|---|
|Qg<br>~~es~~|Total Gate Charge|–––|10|15|nC|ID= 2.0A<br>VDS= 40V<br>VGS= 10V|
|g<br>Qgs<br>~~es~~<br>~~es~~|Gate-to-Source Charge|–––|1.2|–––|||
|Qgd<br>~~es~~<br>~~es~~|Gate-to-Drain Charge|–––|2.8|–––|||
|gd<br>td(on)<br>~~es~~<br>~~es~~<br>~~**es**~~|Turn-On Delay Time<br>~~es~~|–––<br>~~es~~|5.1<br>~~es~~|–––<br>~~es~~|ns<br>~~fo~~<br>~~oo~~|VDD= 25V<br>ID= 1.0A<br>RG= 6.0<br>RD=25<br>~~fo~~|
|d(on)<br>tr<br>~~es~~<br>~~**es**~~|RiseTime<br>~~es~~|–––<br>~~es~~|1.7<br>~~es~~|–––<br>~~es~~|||
|td(off)<br>~~**es**~~|Turn-Off DelayTime<br>~~es~~|–––<br>~~es~~|15<br>~~es~~|–––<br>~~es~~|||
|d(off)<br>tf<br>~~**es**~~<br>~~es~~<br>~~es~~|Fall Time<br>~~es~~|–––<br>~~es~~<br>~~oo~~|2.3<br>~~es~~<br>~~oo~~|–––<br>~~es~~<br>~~oo~~|||
|Ciss<br>~~es~~<br>~~————————~~<br>~~es~~|Input Capacitance<br>~~————————~~|–––<br>~~————————~~<br>~~oo~~|255<br>~~————————~~<br>~~oo~~|–––<br>~~————————~~<br>~~oo~~|pF<br>~~————————~~<br>~~oo~~|VGS= 0V<br>VDS= 25V<br>ƒ= 1.0MHz<br>~~————————~~|
|Coss<br>~~es~~<br>~~————————~~<br>~~es~~|Output Capacitance<br>~~————————~~|–––<br>~~————————~~<br>~~oo~~|69<br>~~————————~~<br>~~oo~~|–––<br>~~————————~~<br>~~oo~~|||
|Crss<br>~~————————~~<br>~~es~~|ReverseTransferCapacitance<br>~~————————~~|–––<br>~~————————~~<br>~~oo~~|29<br>~~————————~~<br>~~oo~~|–––<br>~~————————~~<br>~~oo~~|||
|**Diode Characteristics**<br>~~oo~~<br>~~es~~<br>~~II~~|||||||
|~~nn~~|**Parameter **<br>~~nn~~|**Min.**<br>~~nn~~<br>~~I~~|**Typ. M**<br>~~nn~~<br>~~I~~|**. Max.**<br>~~nn~~<br>~~I~~|**Units**<br>~~nn~~|**Conditions**<br>~~nn~~|
|IS<br>~~4)~~|Continuous Source Current<br>(Body Diode)<br>~~4)~~|–––<br>~~I ~~<br>~~4)~~|–––<br> ~~I~~<br>~~4)~~|3.0<br>~~I~~<br>~~4)~~|A<br>~~4)~~<br>~~SD~~<br>~~QO~~|MOSFET symbol<br>showing the<br>integral reverse<br>p-n junction diode.<br>&<br>~~SD~~|
|ISM<br>~~4)~~<br>~~a~~<br>~~Rs~~|Pulsed Source Current<br>(Body Diode)<br>~~4)~~<br>~~SD~~|–––<br>~~4)~~<br>~~SD~~<br>~~QU~~|–––<br>~~4)~~<br>~~SD~~|12<br>~~4)~~<br>~~SD~~<br>~~QO~~|||
|VSD<br>~~Rs~~|Diode Forward Voltage<br>~~SD~~|–––<br>~~SD~~<br>~~QU~~|–––<br>~~SD~~|1.2<br>~~SD~~<br>~~QO~~|V<br>~~SD~~<br>~~QO~~|TJ =25°C,IS=1.5A,VGS =0V<br>~~SD~~|
|trr<br>~~Rs~~<br>~~oe~~|Reverse Recovery Time<br>~~SD~~<br>~~oe~~|–––<br>~~SD~~<br>~~QU~~<br>~~oe~~|35<br>~~SD~~<br>~~oe~~|53<br>~~SD~~<br>~~QO~~<br>~~oe~~|ns<br>~~SD~~<br>~~QO~~<br>~~oe~~|TJ= 25°C ,IF= 1.5A,<br>nC di/dt = 100A/µs<br>~~SD~~<br>~~oe~~|
|Qrr<br>~~oe~~<br>~~Pf~~|Reverse RecoveryCharge<br>~~oe~~<br>~~Pf~~|–––<br>~~oe~~|45<br>~~oe~~|67<br>~~oe~~|nC di/dt = 100A/<br>~~oe~~||
|ton<br>~~Pf~~|Forward Turn-On Time<br>~~Pf~~|Intrinsic turn-on time is negligible(turn-on is dominated byLS+LD)|||||
## **Notes:**
- Repetitive rating; pulse width limited by max. junction temperature.
- Pulse width 400µs; duty cycle 2%.
- Surface mounted on 1" in square Cu board.
- Starting TJ = 25°C, L = 4.9mH, RG = 25, IAS = 3.0A. (See Fig. 12)
- ISD 2.0A, di/dt 155A/µs, VDD V(BR)DSS, TJ 175°C.
- Limited by TJmax , see Fig.16b, 16c, 19, 20 for typical repetitive avalanche performance.
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100<br>VGS<br>TOP 15V<br> 10V<br> 8.0V<br> 7.0V<br> 6.0V<br> 5.5V<br> 5.0V<br>BOTTOM 4.5V<br>4.5V<br>10 V"<br>20µs PULSE WIDTH<br>Tj = 25°C<br>fo<br>1<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>
**Fig. 1** Typical Output Characteristics
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100.00<br>TJ = 175 ° C<br>—————<br>TJ = 25°C<br>10.00 ATT] |<br>Van<br>VDS = 25V<br>20µs PULSE WIDTH<br>1.00<br>3.0 6.0 9.0 12.0 15.0<br>VGS, Gate-to-Source Voltage (V)<br>)<br><br>ID, Drain-to-Source Current<br>**----- End of picture text -----**<br>
**Fig. 3** Typical Transfer Characteristics
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100<br>VGS<br>TOP 15V<br> 10V<br> 8.0V<br> 7.0V<br> 6.0V<br> 5.5V<br>10 5.0VBOTTOM 4.5V 4.5V<br>1<br>/<br>20µs PULSE WIDTH<br>Tj = 175°C<br>r<br>0.1<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig. 2 Typical Output Characteristics<br>2.5<br>ID = 3.0A<br>Po LE E LE<br>2.0<br>UE<br>1.5<br>E TATATEATANEAND2LE<br>CU Pr PEeet<br>4000<br>1.0<br>A eT<br>TTT ET<br>TELE<br>0.5 LEE<br>LLL ELE EEL EET V GS= 10V<br>0.0<br>-60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>T , Junction TemperatureJ ( C)°<br>(Normalized)<br>DS(on)<br>R , Drain-to-Source On Resistance<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>
**Fig. 4** Normalized On-Resistance vs. Temperature
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10000 VCCGS rss iss = C = C = 0V, f = 1 MHZgd gs + Cgd, Cds SHORTED 12 ID = 2.0A V V VDSDSDS = = = 40V 25V 10V<br>ae C oss = C ds + C gd 9 fae<br>0 | | LY<br>1000<br>Ciss 6<br>Sane P| | | | AY |<br>a7 4a<br>PT aaayv7aun<br>100 Coss<br>Crss 3<br>“SHBill <=- LiAPVy)T|<br>10 0 Yi | i tl [t][y]<br>1 10 100 0 3 6 9 12<br>VDS, Drain-to-Source Voltage (V) Q , Total Gate Charge (nC)G<br>Fig 5. Typical Capacitance vs. Fig 6. Typical Gate Charge vs.<br> Drain-to-Source Voltage Gate-to-Source Voltage<br>100<br>OPERATION IN THIS AREA<br>2S SSSES LIMITED BY R DS(on)<br>10<br>ze:. [puac] pEAzezof si arene: ar<br>iL {YeALS] | 1 PNnah Siar: 100µsec<br>2 SEEPS No 1msec<br>0.1<br>a Ay | Tc = 25°C Sut<br>Tj = 175°C 10msec<br>Single Pulse<br>0.01<br>FEL PE | hectov 3<br>54 a6 08 1.0 12 0 1 10 100 1000<br>Vsp ,Source-to-Drain Voltage (V)<br>VDS , Drain-toSource Voltage (V)<br>GS<br>V , Gate-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>C, Capacitance(pF)<br>**----- End of picture text -----**<br>
**Fig. 7** Typical Source-to-Drain Diode Forward Voltage
**Fig 8.** Maximum Safe Operating Area
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3.0 BNE<br>2.4<br>SENSE<br>PT ELAR LEE LL<br>1.8<br>PT TT TT NEE EI<br>eRe Ne<br>1.2 PT<br>PT tT tT TELL EN [1<br>0.6 Pi Et; LT EEE EEN SI<br>pt tTPE eTTE yyT_T LLTANN<br>0.0<br>25 Pitt 50 75 EL 100 ELLE 125 150 LE | 175<br>T , Case TemperatureC ( C)°<br>I , Drain Current (A)D<br>**----- End of picture text -----**<br>
**Fig 10a.** Switching Time Test Circuit
**Fig 9.** Maximum Drain Current vs. Case Temperature
**Fig 10b.** Switching Time Waveforms
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100<br>D = 0.50<br>LOTTin oe<br>10 0.20 meeeTTL | ll<br>0.10<br>HEE Se 0.05<br>0.02<br>1 TH——pet 0.01 Cea)oc | A A EA<br>0.1 SINGLE PULSE<br>( THERMAL RESPONSE ) Notes:<br>1. Duty Factor D = t1/t2<br>2. Peak Tj = P dm x Zthja + TA<br>0.01<br>1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100<br>t1 , Rectangular Pulse Duration (sec)<br>Thermal Response ( Z thJA ) °C/W<br>**----- End of picture text -----**<br>
**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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0.15 2.500<br>aa ;<br>0.14<br>2.000<br>0.13<br>COPE 1.500 HE V GS = 4.5V<br>0.12<br>eae 1.000 rot<br>0.11 ID = 3.0A<br>0.500<br>0.10 SSL CEE SHEERS VGS = 10V<br>0.09 CEBPEEE 0.000 poe<br>4.5 6.0 7.5 9.0 10.5 12.0 13.5 15.0 0 5 10 15 20 25 30 35 40<br>-VGS, Gate -to -Source Voltage (V) ID , Drain Current (A)<br>Fig 12. Typical On-Resistance Vs.<br>Fig 13. Typical On-Resistance Vs.<br>Gate Voltage<br>Drain Current<br>2.0 70<br>60<br>1.8 NOE YE] Ey at<br>50<br>ID = 250µA<br>40<br>1.5 PSST CACC<br>aN 30 UNI EEL UT<br>20<br>1.3<br>10<br>1.0 ETethE EN | ee 0 COO<br>-75 -50 -25 0 25 50 75 100 125 150 CT<br>1.00 10.00 100.00 1000.00<br>TJ , Temperature ( °C ) Time (sec)<br>)<br><br>RDS (on) , Drain-to-Source On Resistance (<br>VGS(th) Gate threshold Voltage (V)<br>Power (W)<br>)<br> <br>RDS(on), Drain-to -Source On Resistance (<br>**----- End of picture text -----**<br>
**Fig. 14.** Typical Threshold Voltage Vs. Junction Temperature
**Fig 15.** Typical Power Vs. Time
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AUIRF7103Q ~~[7~~
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60<br>ID<br>pt TOP 1.2A<br>2.5A<br>Nae<br>48 BR BOTTOM 3.0A<br>36 PN | | ft<br>PIN<br>24<br>WM tN | fT<br>NNOK<br>12 | SSA<br>|SAN<br>| NOT<br>0<br>25 50 75 100 125 150 175<br>Starting T , Junction TemperatureJ ( C)°<br>AS<br>E , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>
**Fig 16a.** Maximum Avalanche Energy vs. Drain Current
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15V<br>L DRIVER<br>VDS<br>R G D.U.T +<br>- [V][DD]<br>IAS<br>V n<br>20V<br>tp 0.01<br>y oae/Y |<br>**----- End of picture text -----**<br>
**Fig 16b.** Unclamped Inductive Test Circuit
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**----- Start of picture text -----**<br>
V(BR)DSS<br>tp<br>IAS<br>**----- End of picture text -----**<br>
**Fig 16c.** Unclamped Inductive Waveforms
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Id<br>Vds<br>Vgs<br>!<br>|<br>Vgs(th)<br>Qgs1 Qgs2 Qgd Qgodr<br>aa |<br>**----- End of picture text -----**<br>
**Fig 17.** Gate Charge Test Circuit
**Fig 18.** Basic Gate Charge Waveform
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1000<br>Duty Cycle = Single Pulse<br>100<br>OA AGN Allowed avalanche Current vs<br>avalanche pulsewidth, tav<br>10 assuming Tj = 25°C due to<br>avalanche losses<br>HAN A NNom<br>1 COTO 0.01<br>0.05<br>0.10<br>0.1<br>fv TET cog<br>0.01<br>1.0E-08 BN 1.0E-07 [NN] 1.0E-06 Be 1.0E-05 mas 1.0E-04 1.0E-03 WN 1.0E-02 1.0E-01 1.0E+00 1.0E+01<br>tav (sec)<br>Avalanche Current (A)<br>**----- End of picture text -----**<br>
**Fig 19.** Typical Avalanche Current vs. Pulse width
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**----- Start of picture text -----**<br>
25<br>TOP Single Pulse<br>BOTTOM 10% Duty Cycle<br>20 I D = 3.0A<br>15<br>PNAo<br>10<br>MNSUIMEEIUE<br>5 MINUET<br>CUTS<br>0<br>25 50 75 100 125 150 175<br>Starting TJ , Junction Temperature (°C)<br>EAR , Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>
**Notes on Repetitive Avalanche Curves , Figures 19, 20: (For further info, see AN-1005 at www.infineon.com)**
1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long as Tjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 16b, 16c.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 11, 16).
- tav = Average time in avalanche.
- D = Duty cycle in avalanche = tav ·f
- ZthJC(D, tav) = Transient thermal resistance, see Figures 11)
**PD (ave) = 1/2 ( 1.3·BV·Iav) =** **T/ ZthJC Iav = 2** **T/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav**
**Fig 20.** Maximum Avalanche Energy vs. Temperature
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## **SO-8 Package Outline** (Dimensions are shown in millimeters (inches)
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INCHES MILLIMETERS<br>DIM<br>D _" B ee——}—— MIN MAX eee MIN MAX<br>A 5 | a A .0532 .0688 1.35 1.75<br>ee A1 .0040 .0098 0.10 0.25<br>a b .013 .020 0.33 0.51<br>E 6 | 8 7 6 5 H eeee cD .0075.189 .0098.1968 0.194.80 0.255.00<br>1 2 3 4 0.25 [.010] A > E .1497 .1574 > 3.80 4.00<br>e .050 BASIC 1.27 BASIC<br>|<br>e 1 .025 BASIC 0.635 BASIC<br>> H .2284 .2440 5.80 6.20<br>6X e JL > K .0099 .0196 0.25 0.50<br>a L .016 .050 0.40 1.27<br>ee y 0° 8° 0° 8°<br>e1 K x 45°<br>A<br>A C<br>y<br>0.10 [.004]<br>8X b A1 8X L 8X c<br>0.25 [.010] C A B 7<br>N O T E S : F O O T P R I N T<br>1 . D I M E N S I O N I N G & T O L E R A N C I N G P E R A S M E Y 1 4 . 5 M - 1 9 9 4 . 8 X 0 . 7 2 [ . 0 2 8 ]<br>2 . C O N T R O L L I N G D I M E N S I O N : M I L L I M E T E R<br>3 . D I M E N S I O N S A R E S H O W N I N M I L L I M E T E R S [ I N C H E S ] .<br>4 . O U T L I N E C O N F O R M S T O J E D E C O U T L I N E M S - 0 1 2 A A .<br>ooo<br>5 M | D I MO LEDN PS RI OONT DR UO SE I OS NN SO NT I NO TC TL OU ED EX MC EOELDD 0 P. 1R5O [T. 0R0U6 S] .I O N S . 6 . 4 6 [ . 2 5 5 ]<br>6 D I M E N S I O N D O E S N O T I N C L U D E M O L D P R O T R U S I O N S .<br> M O L D P R O T R U S I O N S N O T T O E X C E E D 0 . 2 5 [ . 0 1 0 ] .<br>7 D I M E N S I O N I S T H E L E N G T H O F L E A D F O R S O L D E R I N G T O<br> A S U B S T R A T E . , OJOOUUO }<br>3 X 1 . 2 7 [ . 0 5 0 ] 8 X 1 . 7 8 [ . 0 7 0 ]<br>**----- End of picture text -----**<br>
## **SO-8 Part Marking Information**
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**SO-8 Tape and Reel** (Dimensions are shown in millimeters (inches)
## TERMINAL NUMBER 1
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**----- Start of picture text -----**<br>
12.3 ( .484 )<br>11.7 ( .461 )<br>8.1 ( .318 )<br>7.9 ( .312 ) FEED DIRECTION<br>**----- End of picture text -----**<br>
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
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**----- Start of picture text -----**<br>
330.00<br>(12.992)<br> MAX.<br>14.40 ( .566 )<br>12.40 ( .488 )<br>**----- End of picture text -----**<br>
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
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AUIRF7103Q ~~& &»«=€=5 =a~~
## **Qualification Information**
|**Qualification Information**|**Qualification Information**|||
|---|---|---|---|
|**Qualification Level**||Automotive<br>(per AEC-Q101)||
|||Comments: This part number(s) passed Automotive qualification. Infineon’s<br>Industrial and Consumer qualification level is granted by extension of the higher<br>Automotive level.||
|**Moisture Sensitivity Level**||SO-8|MSL1|
|**ESD**|Machine Model|Class M1A (+/- 50V)† <br>AEC-Q101-002||
||Human Body Model|Class H0 (+/- 250V)†<br>AEC-Q101-001||
||Charged Device Model|Class C5 (+/- 1125V)† <br>AEC-Q101-005||
|**RoHS Compliant**||Yes||
- Highest passing voltage.
|**Date**|**Comments**|
|---|---|
|4/3/2014|<br>Added "Logic Level Gate Drive" bullet in the features section on page 1<br><br>Updated data sheet with new IR corporate template|
|9/30/2015|<br>Updated datasheet with corporate template<br><br>Corrected orderingtable onpage 1.|
**Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2015 All Rights Reserved.**
## **IMPORTANT NOTICE**
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office (www.infineon.com).
## **WARNINGS**
Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
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2015-9-30
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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