AUIRF6215.

## **AUTOMOTIVE GRADE** 

## ld **Features** 

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D V -150V<br>(BR)DSS<br>RDS(on)   max. 0.29 Ω<br>G<br>S ID -13A<br>**----- End of picture text -----**<br>


## **Description** 

Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications. 

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D<br>S<br>D<br>G<br>TO-220AB<br>AUIRF6215<br>G D S<br>Gate Drain Source<br>**----- End of picture text -----**<br>


## **Absolute Maximum Ratings** 

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.   These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified. 

||**Parameter**|**Max.**|**Units**|
|---|---|---|---|
|ID@ TC= 25°C|Continuous Drain Current, VGS@ 10V<br>~~a~~|-13<br>~~a~~|A<br>|
|ID@ TC= 100°C <br>~~**a**~~|Continuous Drain Current, VGS@ 10V<br>~~ee~~<br>~~**a**~~|-9.0<br>~~ee~~<br>||
|IDM<br>~~**a**~~|Pulsed Drain Current<br>~~**a**~~|-44<br>||
|PD@TC= 25°C<br>~~**a**~~|Power Dissipation<br>~~**a**~~|110<br>|W<br>|
||Linear Derating Factor<br>~~a~~|0.71<br>~~a~~|W/°C<br>~~a~~|
|VGS<br>|Linear Derating Factor<br>Gate-to-Source Voltage<br>~~a~~<br>~~a~~|± 20<br>~~a~~<br>~~a~~|V<br>~~a~~<br>~~a~~|
|EAS<br>~~a~~|Single Pulse Avalanche Energy (ThermallyLimited)<br>~~:~~<br>~~a~~<br>~~oe~~|310<br>~~:~~|mJ<br>~~:~~|
|IAR<br>~~a~~<br>~~ee~~|Avalanche Current<br>~~a~~<br>~~oe~~<br>~~eeos~~|-6.6<br>~~os~~|A<br>~~a~~|
|EAR<br>~~a~~<br>~~ee~~|Repetitive Avalanche Energy<br>~~a~~<br>~~oe~~<br>~~eeos~~|11<br>~~os~~|mJ|
|dv/dt<br>~~ee~~<br>~~po~~|Peak Diode Recovery dv/dt<br>~~eeos~~<br>~~©~~<br>~~po~~|-5.0<br>~~os~~<br>~~©~~|V/ns<br>~~©~~|
|TJ<br>TSTG<br>~~po~~|Peak Diode Recovery dv/dt<br>Operating Junction and<br>Storage Temperature Range<br>~~©~~<br>~~po~~|-55  to + 175<br>~~©~~|°C<br>~~©~~|
|~~po~~|Soldering Temperature, for 10 seconds (1.6mm from case )<br>~~po~~|300||
|~~po~~|Soldering Temperature, for 10 seconds (1.6mm from case )<br>Mounting Torque, 6-32 or M3 screw<br>~~po~~<br>~~a~~|10 lbf in (1.1N m)<br>~~a~~|~~a~~|



HEXFET[®] is a registered trademark of International Rectifier. ***** Qualification standards can be found at http://www.irf.com/ 

www.irf.com 

1 

**Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

||**Parameter**|**Min.**|**Typ.**|**Max. **|**Units**|**Conditions**|
|---|---|---|---|---|---|---|
|Qg|Total Gate Charge<br>~~a~~|–––<br>~~a~~|–––<br>~~a~~|66<br>~~a~~|nC|VGS= -10V, See Fig. 6 & 13<br>ID= -6.6A<br>VDS= -120V<br>~~®~~|
|Qgs|Gate-to-Source Charge<br>~~a~~<br>~~ee~~|–––<br>~~a~~|–––<br>~~a~~|8.1<br>~~a~~|||
|Qgd|Gate-to-Drain("Miller")Charge<br>~~ee~~|–––|–––|35|||
|td(on)|Turn-On DelayTime<br>~~ee~~<br>~~a~~|–––<br>~~a~~|14<br>~~a~~|–––<br>~~a~~|ns|VDD= -75V<br>ID= -6.6A<br>RG= 6.8Ω<br>RD= 12Ω,See Fig. 10<br>~~®~~|
|tr|Rise Time<br>~~es~~|–––<br>~~es~~|36<br>~~es~~|–––<br>~~es~~|||
|td(off)|Turn-Off DelayTime<br>~~ee~~|–––<br>~~ee~~|53<br>~~ee~~|–––<br>~~ee~~|||
|tf|Fall Time|–––|37|–––|||
|LD|Internal Drain Inductance|–––|4.5|–––|nH<br>~~|~~|S<br>D<br>G<br>Between lead,<br>6mm (0.25in.)<br>from package<br>and center of die contact|
|LS|Internal Source Inductance|–––|7.5|–––|||
|Ciss|Input Capacitance<br>~~ee~~|–––<br>~~ee~~|860<br>~~ee~~|–––<br>~~ee~~|pF|VGS= 0V<br>VDS= -25V<br>ƒ= 1.0MHz, See Fig. 5|
|Coss|Output Capacitance<br>~~ee~~|–––<br>~~ee~~|220<br>~~ee~~|–––<br>~~ee~~|||
|Crss|Reverse Transfer Capacitance<br>~~a~~|–––<br>~~a~~|130<br>~~a~~|–––<br>~~a~~|||
|**Diode Characteristics**<br>~~a~~||~~a~~|||||
||**Parameter**<br>~~Pe~~|**Min.**<br>~~Pe~~|**Typ.**<br>~~Pe~~|**Max. **<br>~~Pe~~|**Units**<br>~~Pe~~|**Conditions**<br>~~Pe~~|
|IS|Continuous Source Current<br>(Body Diode)|–––|–––|-13|A|S<br>D<br>G<br>MOSFET symbol<br>showing  the<br>integral reverse<br>p-n junction diode.|
|ISM|(Body Diode)<br>Pulsed Source Current<br>(Body Diode)|–––|–––|-44|||
|VSD|Diode Forward Voltage<br>~~a~~<br>~~—~~|–––<br>~~GQ~~<br>~~ee~~|–––<br>~~GQ~~<br>~~ae~~|-1.6<br>~~GQ~~<br>~~oe~~|V<br>~~GQ~~<br>~~os a~~|TJ= 25°C, IS= -6.6A, VGS= 0V<br>~~aoe~~|
|trr|Reverse RecoveryTime<br>~~—~~|–––<br>~~ee~~|160<br>~~ae~~|240<br>~~oe~~|ns<br>~~os a~~|TJ= 25°C, IF= -6.6A<br>di/dt = 100A/µs<br>~~aoe~~<br>~~®~~|
|Qrr|Reverse RecoveryCharge<br>~~—~~<br>~~es~~|–––<br>~~ee~~<br>~~es~~|1.2<br>~~ae~~<br>~~es~~|1.7<br>~~oe~~|nC<br>~~os a~~||
|ton|Forward Turn-On Time<br>~~—~~<br>~~a~~|Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)<br>~~ee ae oe os a oe~~|||||



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> R θ is measured at TJ approximately 90°C. 

Ω 

## **Qualification Information[†]** 

|**Qualification Information[†]**|**Qualification Information[†]**|||
|---|---|---|---|
|**Qualification Level**||Automotive<br>(per AEC-Q101) ††||
|||Comments: This part number(s) passed Automotive qualification.<br>IR’s Industrial and Consumer qualification level is granted by<br>extension of the higher Automotive level.||
|**Moisture Sensitivity Level**||TO-220|N/A|
|**ESD**|Machine Model|Class M3 (400V)<br>AEC-Q101-002||
||Human Body Model|Class H1B (1000V)<br>AEC-Q101-001||
||Charged Device<br>Model|Class C5 (1125V)<br>AEC-Q101-005||
|**RoHS Compliant**||Yes||



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100<br> TOP          - 15V<br>                  - 10V<br>                  - 8.0V<br>                  - 7.0V<br>                  - 6.0V<br>                  - 5.5V<br>                  - 5.0V<br> BOTTOM  - 4.5V Sy ae<br>gee<br>10 AoY<br>Lo”<br>Zs eee<br>Zot<br>Gt ll<br> -4.5V<br> T   = 25°Cc<br>1 s e men<br>1 10 100<br>-V     , Drain-to-SouDS e Voltage (V)<br>D<br>-I   , Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


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100<br> TOP          - 15V<br>                  - 10V<br>                  - 8.0V<br>                  - 7.0V<br>                  - 6.0V<br>                  - 5.5V<br>                  - 5.0V<br> BOTTOM  - 4.5V REE ee<br>Ah<br>| oY4———Hill<br>10<br>eyeet eae<br>ey Zann eel<br>SD Aaaen ee<br>VAA -4.5V eee<br> 20µs PULSE WIDTH<br> T   = 175°CC<br>1 Ail<br>1 10 100<br>-V     , Drain-to-SourDS e Voltage (V)<br>D<br>-I   , Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


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100 ——Thee OO 2.52.0 G TZ,ae<br>re ee a<br>T  = 25°CJ<br>| a r 1.5 PEPE<br>T  = 175°CJ<br>10 Danny EE ECE<br>Hp GA aeenee 1.0 TT ANIA LED?  ae ca (HUA HAT<br>ee aT<br>en 7 Ac OO JT<br>a> eee eee 0.5 en EE<br>Dp saeeeeeeen 7<br> V     = -50VDS<br>7} PE<br>1 JL ||| sous purse wore 0.0 PUDee<br>4 5 6 7 8 9 10 A -60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>-V     , Gate-to-Source Voltage (V)GS T   , Junction Temperature (°C)J<br>(Normalized)<br>D<br>-I   , Drain-to-Source Current (A) DS(on)<br>R           ,  Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>


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2000<br>V      = 0V,         f = 1MHzGS<br>C      = C     + C     ,   C     SHORTEDiss         gs         gd         ds<br>C      = Crss         gd<br>1600 T| C      = C     + Coss        ds         gd<br>INE<br>s<br>Sat<br>1200<br>DN<br>KN ss<br>800<br>| NS |<br>ss<br>400 a N, Selleel<br>0 eea Sill<br>1 10 100<br>-V     , Drain-to-Source Voltage (V)DS<br>C, Capacitance (pF)<br>**----- End of picture text -----**<br>


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100 ———<br>=<br>En ee me<br>>< T  = 175°CJ a<br>10<br>pA |<br>T  = 25°CJ<br>HFA<br>a ee) a ee<br>1 SS = SSS<br>a<br>PP<br>0.1 Pe te | ew<br>0.2 0.6 1.0 1.4 1.8<br>-V     , Source-to-Drain Voltage (V)SD<br>SD<br>-I     , Reverse Drain Current (A)<br>**----- End of picture text -----**<br>


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20<br> I    = -6.6AD<br> V      = -75VDS<br>16 P  V      = -30V AE DS<br>ee ee<br>| | yy<br>12<br>eee / Ae<br>aD eee<br>8<br>e/a<br>4 Lyi(fTft<br>0 po[| ronretr     SEE FIGURE 13 ecu<br>0 20 40 60 80<br>Q   , Total Gate Charge (nC)G<br>GS<br>-V     , Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


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100<br>pd  OPERATION IN THIS AREA LIMITED<br>                       BY RDS(on)<br>cen testa ret<br>as eeee eas |<br>10µs<br>ee<br>MEO A || |<br>10 LAIN N 100µs<br>arSS e eee<br>eH<br>1ms<br>IE<br> CN No e<br> Single Pulse 10ms<br>1 me: N N<br>1 10 100 1000<br>-V     , Drain-to-Source Voltage (V)DS<br>D<br>-I   , Drain Current (A)<br>**----- End of picture text -----**<br>


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15 Pitt TTT TTT yy<br>12 SERRE<br>PPA ET Ey<br>9<br>PUPP SAE<br>SRR<br>6<br>pitt} ty NE<br>tte E ty tN<br>Pitt<br>3 TTT TN<br>CCEA<br>0<br>25 50 75 100 125 150 175<br>T   , Case TemperatureCC (  C)°°<br>D<br>-I   , Drain Current (A)<br>**----- End of picture text -----**<br>


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-<br>+<br>≤ 1  us<br>≤ 0.1 %<br>**----- End of picture text -----**<br>


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0 td(on) tr td(off) tf<br>25 50 75 100 125 150 175 VGS<br>T   , Case TemperatureCC (  C)°° 10%90% ivAansane<br>Fig 9. Maximum Drain Current Vs. VDS<br>Case Temperature<br>Fig 10b. Switching Time Waveforms<br> 10<br>a a ee ell<br> 1<br>Ss D = 0.50  en a<br>0.20 Se ee ee |<br>0.10 a eee PDM<br>0.1 0.05<br>t1<br>0.02 SINGLE PULSE<br>ane 0.01 (THERMAL RESPONSE) ee t2<br>Me ee e el 1. Duty factor D =Notes: t   / t1 2<br>ee | 2. Peak T J = P DM x  Z thJC + TC<br>0.01<br>0.00001 0.0001 0.001 0.01 0.1  1<br>t  , Rectangular Pulse Duration (sec)1<br>thJC<br>(Z        )<br>Thermal Response<br>**----- End of picture text -----**<br>


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VDS L<br>RG D.U.T |. VDD<br>” IAS<br>-20V DRIVER<br>i tp 0.01 Ω<br>15V<br>**----- End of picture text -----**<br>


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800<br>                    ID<br>TOP            -2.7A<br>                   -4.7A<br>aaa nae<br>BOTTOM    -6.6A<br>Att<br>600 PN<br>400<br>PAT Pt<br>INN Et<br>200<br>PSS<br>-_ | SSN<br>P| SSA<br>0<br>25 50 75 100 125 150 175<br>Starting T  , Junction Temperature (°C)J<br>AS<br>E     ,   Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


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IAS<br>\ |<br>\<br>\ |<br>¢— tp<br>V(BR)DSS<br>**----- End of picture text -----**<br>


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QG<br>a<br>QGS QGD<br>VG<br>ivan<br>Charge<br>**----- End of picture text -----**<br>


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Current Regulator<br>Same Type as D.U.T.<br>50K Ω<br>!<br>12V .2 µ F<br>.3 µ F<br>| T | =) D.U.T. +-VDS<br>VGS<br>-3mA<br>|<br>Ort.<br>IG ID<br>Current Sampling Resistors<br>**----- End of picture text -----**<br>


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™ +    •  Low Stray Inductance<br>® •   Ground Plane<br> •   Low Leakage Inductance<br>Current Transformer<br>-<br>+<br>® =<br>- - +<br>8 ®<br>(0<br>+<br>Re •  •   dv/dt controlled by Rg -<br>•   D.U.T. - Device Under Test<br>(1) Isp controlled by Duty Factor "D"<br>* Reverse Polarity of D.U.T for P-Channel<br>® Driver Gate Drive<br>P.W.<br>Period D =<br>P.W. | Period _t<br>GS<br>t<br>@ D.U.T. ISD Waveform<br>Reverse<br>Recovery Body Diode Forward<br>Current "| Current di/dt a<br>©) D.U.T. VDS Waveform<br>Diode Recoverydv/dt \<br>Re-Applied<br>Voltage Body Diode  Forward Drop<br>® Inductor Curent es ee<br>Ripple  ≤ 5% ISD<br>**----- End of picture text -----**<br>


International TOR Rectifier 

## AUIRF6215 

## Dimensions are shown in millimeters (inches) 

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NOTES:<br>1 DIMENSIONING AND TOLERANCING PER ASME Y14.5 M- 1994,<br>& 2 DIMENSIONS ARE SHOWN IN INCHES [MILLIMETERS].<br>8) 3 LEAD DIMENSION AND FINISH UNCONTROLLED IN Lt.<br>LN SEATING 4 DIMENSION D & E DO NOT INCLUDE MOLD FLASH. MOLD FLASH HEAD_ASSIGNMENTS<br>0G1pr [E] oP 4‘“I PLANEat /\ SHALLMEASUREDDIMENSIONNOT ATb1EXCEEDTHE& c1OUTERMOST.005”APPLY(0.127)TO EXTREMESBASEPERMETALSIDE.OFONLY.THETHESEPLASTICDIMENSIONSBODY. ARE exrer3 SN<br>A Z| A 6 CONTROLLING DIMENSION : INCHES. xe SOURCE<br>B 1S B HI 7 THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS £,H1,02 & Ef<br>a ay B 8 DIMENSION E2 X H1 DEFINE A ZONE WHERE STAMPING IGBTs, CoPACK<br>2AT 4 2 AND SINGULATION IRREGULARITIES ARE ALLOWED. 3.-t= EMITTERcate<br> | —] DETAIL 2.— COLLECTOR<br>i SYMBOL J- Beseore<br>iT It A 3.56 4.82 140 .190<br>L Al 0.51 1.40 020 .055<br>A2 2.04 2.92 080 AIS<br>b 0.38 1.01 015 040<br>ag sei¢ +_| SHEET» 2 b3 b i2 0,381.151.15 011.73 . 7796 0 04541 5, 038.070.068 5<br>A2 c 0,36 0.61 014 024<br>cl 0,36 0.56 014 022 5<br>D 14.22 16.51 560 .650 4<br>01 8.38 9.02 330 355,<br>THERMAL PAD 02 12.19 12.88 480 507 7<br>r®° aN E 9,66 10.66 380 420 47<br>an“1 I ll 4ul Etele 8.38 8.89 330 350 7<br>L | \h H1 5.85 6.55, 230 .270 7,8<br>I 02 A well 3x 82 ulL 12.70- 14.736.35 500- 5825 0 3<br>® cue oP 3.54 4.08 139 161<br>Q 2.54 3.42 100 135,<br>6<br>oA poe ese<br>MEW A=A<br>**----- End of picture text -----**<br>


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Part Number AUIRF6215<br>| Date Code<br>IRLogo ray Y= Year<br>a4 YVWWA WW= Work Week<br>A= Automotive, Lead Free<br>Lot Code<br>**----- End of picture text -----**<br>


## Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 

## **Ordering Information** 

|**Base part**<br>**number**|**Package Type**|**Standard Pack**|**Standard Pack**|**Complete Part Number**|
|---|---|---|---|---|
|||**Form**|**Quantity**||
|AUIRF6215|TO-220|Tube|**Quantity**<br>50|AUIRF6215|



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