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AUIRF540ZSTRL
Power MOSFET, N Channel, 100 V, 36 A, 0.021 ohm, TO-263AB, Surface Mount
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single MOSFETs
- No. of Pins: 3Pins
- Channel Type: N Channel
- Product Range: HEXFET
- Qualification: AEC-Q101
- Power Dissipation: 92W
- Transistor Mounting: Surface Mount
- Transistor Polarity: N Channel
- Power Dissipation Pd: 92W
- Rds(on) Test Voltage: 10V
- On Resistance Rds(on): 0.021ohm
- Transistor Case Style: TO-263AB
- Drain Source Voltage Vds: 100V
- Operating Temperature Max: 175°C
- Continuous Drain Current Id: 36A
- Drain Source On State Resistance: 0.021ohm
- Automotive Qualification Standard: AEC-Q101
- Gate Source Threshold Voltage Max: 4V
| Delivery and price | |
|---|---|
| Units per pack | 100 |
| Price | 1.29 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
AUIRF540Z AUIRF540ZS ~~po~~
**AUTOMOTIVE GRADE**
## ~~Cinfin eon~~
## **Features**
|**Features**|||||
|---|---|---|---|---|
|**Features**|||HEXFET®Power MOSFET||
|Advanced Process Technology<br>Ultra Low On-Resistance<br>175°C Operating Temperature<br>Fast Switching<br>Repetitive Avalanche Allowed up to Tjmax<br>Lead-Free, RoHS Compliant<br>Automotive Qualified *||**VDSS**<br>**100V**<br>**RDS(on) typ.**<br>**21m**<br>**max.**<br>**26.5m**<br>**ID**<br>**36A**<br>~~=~~|||
|**Description**|||D||
|Specifically<br>designed<br>for<br>Automotive<br>applications,<br>this|||||
|HEXFET® Power MOSFET utilizes the latest processing<br>techniques to achieve extremely low on-resistance per silicon<br>area. Additional features of this design are a 175°C junction|||S<br>D<br>G<br>S<br>G||
|operating temperature, fast switching speed and improved|||TO-220AB<br>D2Pak||
|repetitive avalanche rating. These features combine to make|||AUIRF540Z<br>AUIRF540ZS||
|this design an extremely efficient and reliable device for use in|||||
|Automotive applications and wide variety of other applications.|**G**<br>**D**<br>**S**<br>Gate<br>Drain<br>Source<br>~~a~~||||
|**Base part number**<br>**Package Type**<br>**Standard Pack**<br>**Form**|**Standard Pack**<br>**Quantity**||**Orderable Part Number**||
|AUIRF540Z<br>TO-220<br>Tube||50|AUIRF540Z||
|AUIRF540ZS<br>D2-Pak<br>Tube<br>Tape andReel Left||50<br>800|AUIRF540ZS<br>AUIRF540ZSTRL||
## **Absolute Maximum Ratings**
|Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress|
|---|
|ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not|
|implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance|
|and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless|
|otherwise specified.|
|**Symbol**<br>**Parameter**<br>**Max.**<br>**Units**<br>ID@ TC= 25°C<br>Continuous Drain Current, VGS@ 10V (Silicon Limited)<br>36<br>A<br>ID @TC= 100°C<br>Continuous Drain Current,VGS @10V(Silicon Limited)<br>25<br>IDM<br>Pulsed Drain Current<br>140<br>PD@TC= 25°C<br>Maximum Power Dissipation<br>92<br>W<br>Linear Derating Factor<br>0.61<br>W/°C<br>VGS<br>Gate-to-SourceVoltage<br>± 20<br>V<br>EAS<br>Single Pulse Avalanche Energy (ThermallyLimited) <br>83<br>mJ<br>EAS(tested)<br>Single Pulse Avalanche EnergyTested Value<br>120<br>IAR<br>Avalanche Current<br>See Fig.15,16, 12a, 12b<br>A<br>EAR<br>Repetitive Avalanche Energy <br>mJ<br>TJ<br>Operating Junction and<br>-55 to + 175<br>TSTG<br>Storage Temperature Range<br>°C<br>SolderingTemperature,for 10 seconds(1.6mm from case)<br>300<br>Mountingtorque,6-32 or M3 screw<br>10 lbf•in(1.1N•m)<br> <br>~~————————~~<br>~~ae~~<br>~~SSS~~<br>~~Be~~|
|**Thermal Resistance**|
|**Symbol**<br>**Parameter**<br>**Typ.**<br>**Max.**<br>**Units**|
|RJC<br>Junction-to-Case<br>–––<br>1.64|
|°C/W<br>RCS<br>Case-to-Sink, Flat, Greased Surface<br>0.50<br>–––<br>RJA<br>Junction-to-Ambient<br>–––<br>62|
|RJA<br>Junction-to-Ambient(PCB Mount,steadystate) <br>40|
HEXFET® is a registered trademark of Infineon.
***** Qualification standards can be found at www.infineon.com
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AUIRF540Z/S ~~LL~~
**Static @ TJ = 25°C (unless otherwise specified)**
|Qg<br>~~es~~|Total Gate Charge<br>~~es~~|–––<br>~~es~~|42<br>~~es~~|63<br>~~es~~|nC|ID= 22A<br>VDS= 80V<br>VGS= 10V|
|---|---|---|---|---|---|---|
|g<br>Qgs<br>~~es~~<br>~~Rs~~|Gate-to-Source Charge<br>~~es~~|–––<br>~~es~~|9.7<br>~~es~~|–––<br>~~es~~|||
|Qgd<br>~~Rs~~<br>~~es~~|Gate-to-Drain Charge|–––|15|–––|||
|gd<br>td(on)<br>~~Rs~~<br>~~es~~|Turn-On Delay Time|–––|15|–––|ns<br>~~+++,~~]|VDD= 50V<br>ID= 22A<br>RG= 12<br>VGS= 10V<br>~~ee~~|
|d(on)<br>tr<br>~~es~~<br>~~es~~|Rise Time|–––|51|–––|||
|td(off)<br>~~es~~<br>~~es~~|Turn-Off DelayTime<br>|–––<br>|43<br>|–––<br>|||
|d(off)<br>tf<br>~~es~~<br>~~es+++,~~|Fall Time<br>~~+++,~~|–––<br>~~+++,~~|39<br>~~+++,~~|–––<br>~~+++,~~|||
|LD<br>~~es+++,~~|Internal Drain Inductance<br>~~+++,~~|–––<br>~~+++,~~|4.5<br>~~+++,~~|–––<br>~~+++,~~|nH<br>~~+++,~~]|Between lead,<br>6mm (0.25in.)<br>from package<br>and center of die contact<br>~~ee~~|
|LS<br>~~+++,~~|Internal Source Inductance<br>~~+++,~~|–––<br>~~+++,~~|7.5<br>~~+++,~~|–––<br>~~+++,~~|||
|Ciss<br>~~+++,~~<br>~~esnner~~|Input Capacitance<br>~~+++,~~<br>~~nner~~|–––<br>~~+++,~~<br>~~nner~~|1770<br>~~+++,~~<br>~~nner~~|–––<br>~~+++,~~<br>~~nner~~|pF<br>~~+++,~~ ]<br>~~nner~~|VGS= 0V<br>VDS= 25V<br>ƒ= 1.0MHz,See Fig. 5<br>~~ee~~<br>~~PO~~|
|Coss<br>~~+++,~~<br>~~esnner~~|OutputCapacitance<br>~~+++,~~<br>~~nner~~|–––<br>~~+++,~~<br>~~nner~~|180<br>~~+++,~~<br>~~nner~~|–––<br>~~+++,~~<br>~~nner~~|||
|Crss<br>~~+++,~~<br>~~esnner~~<br>~~es~~|ReverseTransferCapacitance<br>~~+++,~~<br>~~nner~~|–––<br>~~+++,~~<br>~~nner~~|100<br>~~+++,~~<br>~~nner~~|–––<br>~~+++,~~<br>~~nner~~|||
|Coss<br>~~nner~~<br>~~es~~<br>~~es~~|OutputCapacitance<br>~~nner~~|–––<br>~~nner~~|730<br>~~nner~~|–––<br>~~nner~~||VGS=0V,VDS= 1.0Vƒ= 1.0MHz<br>~~PO~~<br>~~Po~~|
|Coss<br>~~nner~~<br>~~es~~<br>~~es~~<br>~~es~~|Output Capacitance<br>~~nner~~|–––<br>~~nner~~|110<br>~~nner~~|–––<br>~~nner~~||VGS=0V,VDS=80Vƒ= 1.0MHz<br>~~PO~~<br>~~Po~~<br>~~PO~~|
|Coss eff.<br>~~nner~~<br>~~es~~<br>~~es~~|Effective Output Capacitance<br>~~nner~~|–––<br>~~nner~~|170<br>~~nner~~|–––<br>~~nner~~||VGS= 0V,VDS= 0V to 80V<br>~~Po~~<br>~~PO~~|
|**Diode Characteristics**<br>~~nner~~<br>~~es~~<br>~~PO~~<br>~~po~~|||||||
|~~po{1}~~|**Parameter **<br>~~{1}~~|**Min.**<br>~~{1}~~|**Typ. M**<br>~~{1}~~|**. Max.**<br>~~{1}~~|**Units**<br>~~)~~|**Conditions**<br>~~gy~~|
|IS<br>~~po{1}~~|Continuous Source Current<br>(Body Diode)<br>~~{1}~~|–––<br>~~{1}~~|–––<br>~~{1}~~|36<br>~~{1}~~|A<br>~~)~~<br>~~es~~<br>~~QO~~<br>|MOSFET symbol<br>showing the<br>integral reverse<br>p-n junction diode.<br>~~gy~~<br>~~es~~<br>|
|ISM<br>~~{1}~~<br>~~es~~<br>~~Cee~~|Pulsed Source Current<br>(Body Diode)<br>~~{1}~~<br>~~es~~<br>|–––<br>~~{1}~~<br>~~es~~<br>~~I~~<br>|–––<br>~~{1}~~<br>~~es~~<br>~~Us~~<br>|140<br>~~{1}~~<br>~~es~~<br>~~Us~~<br>|||
|VSD<br>~~{1}~~<br>~~es~~<br>~~Cee~~|Diode Forward Voltage<br>~~{1}~~<br>~~es~~<br>|–––<br>~~{1}~~<br>~~es~~<br>~~I~~<br>|–––<br>~~{1}~~<br>~~es~~<br>~~Us~~<br>|1.3<br>~~{1}~~<br>~~es~~<br>~~Us~~<br>|V<br>~~)~~<br>~~es~~<br>~~QO~~<br>|TJ =25°C,IS=22A,VGS =0V<br>~~gy~~<br>~~es~~<br>|
|trr<br>~~es~~<br>~~Cee~~<br>~~es~~|Reverse Recovery Time<br>~~es~~<br>~~ee~~<br>|–––<br>~~es~~<br>~~I~~<br>~~ee~~<br>|33<br>~~es~~<br>~~Us~~<br>~~ee~~<br>|50<br>~~es~~<br>~~Us~~<br>~~ee~~<br>|ns<br>~~es~~<br>~~QO~~<br>~~ee~~<br>|TJ= 25°C ,IF= 22A, VDD= 50V<br>nC di/dt = 100A/µs<br>~~es~~<br>~~ee~~<br>|
|Qrr<br>~~Cee~~<br>~~es~~|Reverse RecoveryCharge<br>~~ee~~<br>|–––<br>~~I~~<br>~~ee~~<br>|41<br>~~Us~~<br>~~ee~~<br>|62<br>~~Us~~<br>~~ee~~<br>|nC di/dt = 100A/<br>~~QO~~<br>~~ee~~<br>||
|ton<br>~~Cee ~~<br>~~es~~|Forward Turn-On Time<br> ~~ee~~<br>~~Df~~|Intrinsic turn-on time is negligible(turn-on is dominated byLS+LD)<br>~~I UsQO~~<br>~~ee~~<br>~~Df~~|||||
Limited by TJmax , starting TJ = 25°C, L = 0.46mH, RG = 25, IAS = 20A, VGS =10V. Part not recommended for use above this value.
- Pulse width 1.0ms; duty cycle 2%.
- Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance.
- This value determined from sample failure population, TJ = 25°C, L = 0.46mH, RG = 25, IAS = 20A, VGS =10V.
- This is only applied to TO-220AB package.
- This is applied to D[2] Pak When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994
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AUIRF540Z/S
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1000<br>VGS<br>TOP 15V<br>10V<br>8.0V<br>7.0V<br>6.0V<br>5.5V<br>100<br>5.0V<br>BOTTOM 4.5V<br>10 ee<br>4.5V<br>60µs PULSE WIDTH<br>Tj = 25°C<br>1<br>Ce ree<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>
**Fig. 1** Typical Output Characteristics
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1000<br>100<br>T = 175°C<br>J<br>iy<br>10<br>wail<br>T = 25°C<br>/ J<br>V DS = 25V<br>60µs PULSE WIDTH<br>1<br>E4ueee<br>4.0 5.0 6.0 7.0<br>VGS, Gate-to-Source Voltage (V)<br>)<br>ID, Drain-to-Source Current<br>**----- End of picture text -----**<br>
**Fig. 3** Typical Transfer Characteristics
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1000<br>VGS<br>TOP 15V<br>10V<br>8.0V<br>7.0V<br>6.0V<br>5.5V<br>100<br>5.0V<br>BOTTOM 4.5V<br>4.5V<br>10 | ae<br>60µs PULSE WIDTH<br>Tj = 175°C<br>1 ZellMat<br>0.10 11 1010 100100<br>VDS, Drain-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>
**Fig. 2** Typical Output Characteristics
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80<br>TJ = 175°C<br>60<br>fee<br>40<br>TJ = 25°C<br>ann<br>20<br>VDS = 10V<br>380µs PULSE WIDTH<br>0<br>Yo<br>0 10 20 30 40 50<br>ID, Drain-to-Source Current (A)<br>Gfs, Forward Transconductance (S)<br>**----- End of picture text -----**<br>
**Fig. 4** Typical Forward Transconductance vs. Drain Current
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## ~~Cinfin eon~~
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3000 20<br>VGS = 0V, f = 1 MHZ I = 22A<br>D<br>Ciss = Cgs + Cgd, Cds SHORTED<br>2500 Crss = Cgd VDS= 80V<br>Coss = Cds + Cgd 16 VDS= 50V<br>VDS= 20V<br>2000 es Ss<br>Ciss<br>Tt FS<br>12<br>1500 Staion Ye<br>8<br>1000<br>ont fo<br>4<br>500 Coss<br>FOR TEST CIRCUIT<br>Crss SEE FIGURE 13<br>0 = s=t 0 ZLpF Ef<br>1 10 100 0 10 20 30 40 50 60<br>VDS, Drain-to-Source Voltage (V) QG Total Gate Charge (nC)<br>Fig 5. Typical Capacitance vs. Fig 6. Typical Gate Charge vs.<br> Drain-to-Source Voltage Gate-to-Source Voltage<br>1000.0 1000<br>OPERATION IN THIS AREA<br>LIMITED BY RDS(on)<br>100.0 100<br>EEGEee<br>TJ = 175J = 175= 175 ° C<br>10.0 10 100µsec<br>HA) 1 ORR<br>1.0<br>TJ = 25°CJ = 25°C= 25°C Tc = 25°C 1msec<br>VGS = 0VGS = 0V= 0V Tj = 175Single Pulse°C 10msec<br>0.1<br>0.1 FoLeee TE<br>0.2 0.4 0.6 0.8 1.0 1.2 1.4 1 10 100 1000<br>VDS , Drain-toSource Voltage (V)<br>ISD, Reverse Drain Current (A) ID, Drain-to-Source Current (A)<br>C, Capacitance (pF)<br>VGS, Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>
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1000.0<br>100.0<br>EEGEee<br>TJ = 175J = 175= 175 ° C<br>10.0<br>HA)<br>1.0<br>TJ = 25°CJ = 25°C= 25°C<br>VGS = 0VGS = 0V= 0V<br>0.1 FoLeee<br>0.2 0.4 0.6 0.8 1.0 1.2 1.4<br>VSD, Source-toDrain Voltage (V)<br>ISD, Reverse Drain Current (A)<br>**----- End of picture text -----**<br>
**Fig. 7** Typical Source-to-Drain Diode Forward Voltage
**Fig 8.** Maximum Safe Operating Area
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40<br>30<br>20 Pee<br>iiss<br>10 CLL EEEEN<br>PL EEELEA\<br>0<br>25 50 75 100 125 150 175<br>TJ , Junction Temperature (°C)<br>ID , Drain Current (A)<br>**----- End of picture text -----**<br>
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3.0<br>ID = 22A<br>VGS = 10V<br>2.5<br>2.0<br>TTT<br>1.5 ATT<br>ye<br>1.0<br>0.5 T TTEE<br>-60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>TJ , Junction Temperature (°C)<br>RDS(on) , Drain-to-Source On Resistance (Normalized)<br>**----- End of picture text -----**<br>
**Fig 9.** Maximum Drain Current vs. Case Temperature
**Fig 10.** Normalized On-Resistance vs. Temperature
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10<br>1 D = 0.50 HAA T E LTTE<br>0.20<br>0.10<br>0.1 0.05 eT<br>0.02<br>0.01<br>eee || ||<br>0.01 SINGLE PULSE<br>( THERMAL RESPONSE )<br>0.001 sii TTALEE| FT LL ETTE LET TH<br>1E-006 1E-005 0.0001 0.001 0.01 0.1<br>t1 , Rectangular Pulse Duration (sec)<br>Thermal Response ( Z thJC )<br>**----- End of picture text -----**<br>
**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case
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AUIRF540Z/S ~~Ld~~
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15V<br>L DRIVER<br>VDS<br>R G D.U.T +<br>_ - [V][DD]<br>IAS<br>20V<br>tp 0.01<br>: hk |y |<br>**----- End of picture text -----**<br>
**Fig 12a.** Unclamped Inductive Test Circuit
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V(BR)DSS<br>. tp |<br> Unclamped Inductive Waveforms<br>Id<br>Vds<br>Vgs<br>Vgs(th)<br>U N =<br>Qgs1 Qgs2 Qgd Qgodr<br>a<br>**----- End of picture text -----**<br>
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IAS<br>**----- End of picture text -----**<br>
**Fig 12b.** Unclamped Inductive Waveforms
**Fig 13a.** Gate Charge Waveform
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180<br>160 EERE ID<br>140 NEREEEE TOP 8.3A14A<br>BOTTOM 20A<br>120 PNTTL<br>100<br>NON EEE EE<br>80<br>NAAN EET<br>60<br>PANNE<br>40<br>BERRNNNGEEEE<br>20<br>SR RRERSNNEEE<br>0 PLT | | |ASA<br>25 50 75 100 125 150 175<br>Starting TJ , Junction Temperature (°C)<br>Fig 12c. Maximum Avalanche Energy<br> vs. Drain Current<br>4.0<br>3.5<br>PNET TT<br>3.0 ID = 250µA<br>N\<br>PST<br>2.5<br>HELEN<br>2.0<br>LETT LENG<br>cS<br>1.5<br>-75 -50 -25 0 25 50 75 100 125 150 175<br>TJ , Temperature ( °C )<br>EAS , Single Pulse Avalanche Energy (mJ)<br>VGS(th) Gate threshold Voltage (V)<br>**----- End of picture text -----**<br>
**Fig 14.** Threshold Voltage vs. Temperature
**Fig 13b.** Gate Charge Test Circuit
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AUIRF540Z/S ~~LL~~
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1000<br>Duty Cycle = Single Pulse<br>100 Allowed avalanche Current vs<br>avalanche pulsewidth, tav<br>Fre 0.01 assuming Tj = 25°C due to<br>avalanche losses<br>10<br>0.05<br>ee ee<br>0.10<br>1 Po ee al<br>sataee meeBeva BUati eee<br>0.1<br>1.0E-08 1.0E-07 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01<br>tav (sec)<br>Avalanche Current (A)<br>**----- End of picture text -----**<br>
**Fig 15.** Typical Avalanche Current vs. Pulse width
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100<br>TOP Single Pulse<br>90 To<br>BOTTOM 10% Duty Cycle<br>80 I D = 20A<br>70<br>60 PIN<br>TT TT TT<br>50 COON<br>40 COON<br>30 COON<br>20 COON<br>10<br>Pit TTT TT NET<br>CCPC<br>0<br>25 50 75 100 125 150 175<br>Starting TJ , Junction Temperature (°C)<br>EAR , Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>
**Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.infineon.com)**
1. Avalanche failures assumption:
- Purely a thermal phenomenon and failure occurs at a temperature far in
- excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long as Tjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 12a, 12b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 15, 16).
- tav = Average time in avalanche.
- D = Duty cycle in avalanche = tav ·f
- ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
**PD (ave) = 1/2 ( 1.3·BV·Iav) =** **T/ ZthJC Iav = 2** **T/ [1.3·BV·Zth]**
**EAS (AR) = PD (ave)·tav**
**Fig 16.** Maximum Avalanche Energy vs. Temperature
2017-09-22
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~~Cinfir~~
AUIRF540Z/S ~~_~~
**Fig 17.** Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
**Fig 18a.** Switching Time Test Circuit
**Fig 18b.** Switching Time Waveforms
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AUIRF540Z/S ~~LL~~
## ~~Cinfin eon~~
**TO-220AB Package Outline** (Dimensions are shown in millimeters (inches))
## **TO-220AB Part Marking Information**
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Part Number AUIRF540Z<br>Date Code<br>IR Logo T éaR YWWA Y= Year<br>WW= Work Week<br><br>XX XX<br>a<br>Lot Code<br>**----- End of picture text -----**<br>
TO-220AB package is not recommended for Surface Mount Application.
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## ~~Cinfin eon~~
**D[2] Pak (TO-263AB) Package Outline** (Dimensions are shown in millimeters (inches))
## **D[2] Pak (TO-263AB) Part Marking Information**
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Part Number AUIRF540ZS<br>Date Code<br>IR Logo T ézR YWWA Y= Year<br>WW= Work Week<br><br>XX XX<br>[|Sd<br>Lot Code<br>**----- End of picture text -----**<br>
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AUIRF540Z/S ~~LL~~
## **D[2] Pak (TO-263AB) Tape & Reel Information** (Dimensions are shown in millimeters (inches))
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**----- Start of picture text -----**<br>
TRR<br>1.60 (.063)<br>1.50 (.059)<br>1.60 (.063)<br>4.10 (.161)<br>3.90 (.153) 1.50 (.059) 0.368 (.0145)<br>0.342 (.0135)<br>FEED DIRECTION 1.85 (.073) 11.60 (.457)<br>1.65 (.065) 11.40 (.449) 24.30 (.957)<br>15.42 (.609)<br>23.90 (.941)<br>15.22 (.601)<br>TRL<br>1.75 (.069)<br>10.90 (.429) 1.25 (.049)<br>10.70 (.421) 4.72 (.136)<br>16.10 (.634) 4.52 (.178)<br>15.90 (.626)<br>**----- End of picture text -----**<br>
**==> picture [70 x 7] intentionally omitted <==**
**----- Start of picture text -----**<br>
FEED DIRECTION<br>**----- End of picture text -----**<br>
**==> picture [377 x 189] intentionally omitted <==**
**----- Start of picture text -----**<br>
13.50 (.532) 27.40 (1.079)<br>12.80 (.504) 23.90 (.941)<br>4<br>330.00 60.00 (2.362)<br>(14.173) MIN.<br> MAX.<br>30.40 (1.197)<br>NOTES : MAX.<br>1. COMFORMS TO EIA-418.<br>26.40 (1.039) 4<br>2. CONTROLLING DIMENSION: MILLIMETER. 24.40 (.961)<br>3. DIMENSION MEASURED @ HUB. 3<br>**----- End of picture text -----**<br>
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
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AUIRF540Z/S ~~& &»«=€=5 =a~~
## **Qualification Information**
|**Qualification Information**|**Qualification Information**|||
|---|---|---|---|
|**Qualification Level**||Automotive<br>(per AEC-Q101)||
|||Comments: This part number(s) passed Automotive qualification. Infineon’s<br>Industrial and Consumer qualification level is granted by extension of the higher<br>Automotive level.||
|**Moisture Sensitivity Level**||TO-220AB|N/A|
|||D2-Pak|MSL1|
|**ESD**|Machine Model|Class M4 (400V)† <br>AEC-Q101-002||
||Human Body Model|Class H1B (1000V)†<br>AEC-Q101-001||
||Charged Device Model|Class C3 (750V)† <br>AEC-Q101-005||
|**RoHS Compliant**||Yes||
- Highest passing voltage.
## **Revision History**
|**Date**||**Comments**|
|---|---|---|
|9/30/2015||Updated datasheet with corporate template|
|||Corrected orderingtable onpage 1.|
|09/22/2017||Corrected typo error on part marking on pages 9,10.|
## **Published by Infineon Technologies AG 81726 München, Germany**
**© Infineon Technologies AG 2015 All Rights Reserved.**
## **IMPORTANT NOTICE**
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office (www.infineon.com).
## **WARNINGS**
Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
12
2017-09-22
Updated at February 9, 2023
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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