Image not available
Illustrative purposes only
AUIRF4905STRL
Power MOSFET, P Channel, 55 V, 42 A, 0.02 ohm, TO-263AB, Surface Mount
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single MOSFETs
- Transistor Polarity:P Channel; Continuous Drain Current Id:-42A; Drain Source Voltage Vds:-55V; On Resistance Rds(on):; Available until stocks are exhausted Alternative available
- MSL: MSL 1 - Unlimited
- No. of Pins: 3Pins
- Channel Type: P Channel
- Product Range: HEXFET Series
- Qualification: AEC-Q101
- Power Dissipation: 170W
- Transistor Mounting: Surface Mount
- Rds(on) Test Voltage: 10V
- Transistor Case Style: TO-263AB
- Drain Source Voltage Vds: 55V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 42A
- Drain Source On State Resistance: 0.02ohm
- Gate Source Threshold Voltage Max: 4V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 2.64 € |
| Current stock | 1000+ |
| Lead time | 7 days |
Datasheet
AUIRF4905S AUIRF4905L **AUTOMOTIVE GRADE** ## **Features** - Advanced Planar Technology - P-Channel MOSFET - Low On-Resistance - 150°C Operating Temperature - Fast Switching - Repetitive Avalanche Allowed up to Tjmax - Lead-Free, RoHS Compliant - Automotive Qualified * ## **Description** Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications. HEXFET[® ] Power MOSFET **VDSS -55V RDS(on) max. 20m** **ID (Silicon Limited) -70A ID (Package Limited) -42A** ~~==~~ D D S S G G[D ] D[2] Pak TO-262 AUIRF4905S AUIRF4905L **G D S** Gate Drain Source ~~FF~~ |**Base part number**|**Package Type**|**Standard Pack**|**Standard Pack**|**Orderable Part Number**| |---|---|---|---|---| |||**Form**|**Quantity**|| |AUIRF4905L|TO-262|Tube|50|AUIRF4905L| |AUIRF4905S|D2-Pak|Tube|50|AUIRF4905S| |||Tape andReel Left|800|AUIRF4905STRL| ## **Absolute Maximum Ratings** Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified. |**Symbol**|**Parameter**|**Max.**|**Units**| |---|---|---|---| |ID@ TC= 25°C|Continuous Drain Current, VGS@ 10V (Silicon Limited)|-70|A| |ID @TC= 100°C|Continuous Drain Current,VGS @10V(Silicon Limited)|-44|| |ID@ TC= 25°C|Continuous Drain Current, VGS@ 10V (Package Limited)|-42|| |IDM|Pulsed Drain Current|-280|| |PD@TC= 25°C|Maximum Power Dissipation|170|W| ||Linear DeratingFactor|1.3|W/°C| |VGS|Gate-to-SourceVoltage|± 20|V| |EAS|Single Pulse Avalanche Energy (ThermallyLimited) |140|mJ| |EAS(tested)|Single Pulse Avalanche EnergyTested Value|790|| |IAR|Avalanche Current|See Fig.15,16, 12a, 12b|A| |EAR<br>~~pf~~|Repetitive Avalanche Energy <br>~~pf~~||mJ| |TJ<br>TSTG<br>~~pf~~|Operating Junction and<br>Storage Temperature Range<br>~~pf~~|-55 to + 150|°C| |~~pf~~|SolderingTemperature,for 10 seconds(1.6mm from case)<br>~~pf~~|300|| 1 2015-11-13 ## AUIRF4905S/L ~~Cinfin eon _l__LLL~~ **Static @ TJ = 25°C (unless otherwise specified)** **==> picture [551 x 512] intentionally omitted <==** **----- Start of picture text -----**<br> |||||||||||||||| |---|---|---|---|---|---|---|---|---|---|---|---|---|---|---| |CP|et|Parameter|Min. Typ. Max. Units|Conditions| |es|V(BR)DSS|(QO|Drain-to-Source Breakdown Voltage|-55|–––|–––|V|VGS|= 0V, ID|=|-250µA| |es|V(BR)DSS/TJ|Breakdown Voltage Temp. Coefficient|––– -0.054 –––|(QO|V/°C Reference to 25°C|(OR|, ID = -1mA| |Rs|RDS(on)|Static Drain-to-Source On-Resistance|I|(OUD|–––|(I|–––|(|20|m|VGS = -10V, ID = -42A | |ee|VGS(th)|Gate Threshold Voltage|ID|(OD|-2.0|(RD|–––|(I|-4.0|V|VDS|= VGS, ID|=|-250µA| |Re|gfs|Forward Trans|conducta|I|nce|(Of|19|I|–––|–––|GO|S|OO|VDS = -25V, ID = -42A| |–––|–––|-25|[=]|[-][55V, V][GS]|[=][ 0V ]| |IDSS|Drain-to-Source Leakage Current|Ff|µA|PO|[V][DS]|°| |ee|–––|–––|-250|VDS = -44V,VGS = 0V,TJ =125|C| |IGSS|a|Gate-to-Source Forward Leakage|–––|–––|-100|nA|ee|[V][GS]|[=]|[-][20V ]| |OE|Gate-to-Source Reverse Leakage|–––|–––|100|VGS = 20V| |Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)| |Qg|Total Gate|Charge|–––|120|180|ID = -42A| |es|Qgs|es|Gate-to-Source Charge|–––|32|–––|nC|VDS = -44V| |es|Qgd|Gate-to-Drain Charge|–––|53|–––|VGS = -10V| |es|td(on)|Turn-On Delay Time|–––|20|–––|VDD = -28V| |tr|Rise Time|–––|99|–––|ID = -42A| |ns| |ee|td(off)|Turn-Off Delay Time|–––|51|–––|RG= 2.6| |a|tf|Fall Time|–––|64|–––|VGS = -10V | |Between lead,| |LD|Internal Drain Inductance|–––|4.5|–––|6mm (0.25in.)| |nH| |from package| |LS|Internal Source Inductance|–––|7.5|–––|and center of die contact| |H+}|+]|fo| |ee|Ciss|Input Capacitance|–––|3500|–––|VGS = 0V| |Coss|Output Capacitance|–––|1250|–––|VDS = -25V| |ee|Crss|Reverse Transfer Capacitance|–––|450|–––|OO|ƒ = 1.0MHz| |pF| |es|Coss|Output Capacitance|–––|4620|–––|Po|VGS = 0V,VDS = -1.0V ƒ = 1.0MHz| |es|Coss|eS|Output Capacitance|–––|940|–––|PO|VGS = 0V,VDS = -44V ƒ = 1.0MHz| |a|Coss eff.|ns|Effective Out|nne|put Capacitance|–––|(I|1530|–––|Df|VGS = 0V, VDS = 0V to -44V | |Diode Characteristics| |es|Parameter|nD|Min. T|(OR|yp. M|(|ax.|Units|Conditions| |Continuous Source Current|MOSFET symbol| |IS|(Body Diode)|–––|–––|-42|showing the| |A| |Pulsed Source Current|integral reverse| |fj|ISM|(Body Diode)|if|–––|–––|-280|p-n junction diode.| |VSD|Diode Forward Voltage|–––|–––|-1.3|V|TJ = 25°C,IS = -42A,VGS = 0V | |eenD(tS| |trr|Reverse Recovery Time|–––|61|92|ns|TJ = 25°C ,IF = -42A , VDD = -28V| |e|Qrr|snD|Reverse Recovery Charge|e|–––|150|220|nC di/dt = 100A/µs | |ee|ton|Forward Turn-On Time|I|Intrinsic turn-on time is negligible (turn-on is dominated by L|I|I|S+LD)| **----- End of picture text -----**<br> **Notes:** > Repetitive rating; pulse width limited by max. junction temperature. (See fig.11) > Limited by TJmax, starting TJ = 25°C, L = 0.16mH, RG = 25, IAS = -42A, VGS =-10V. Part not recommended for use above this value. Pulse width 1.0ms; duty cycle 2%. - Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. - Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. - This value determined from sample failure population, starting TJ = 25°C, L = 0.08mH, RG = 25, IAS = 66A, VGS =10V. - This is applied to D[2 ] Pak, When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994 - R is measured at TJ of approximately 90°C 2 2015-11-13 AUIRF4905S/L **==> picture [211 x 195] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>VGS<br>TOP -15V<br>-10V<br>-8.0V<br>-7.0V<br>-6.0V<br>-5.5V<br>100 -5.0V<br>4 BOTTOM -4.5V<br>10<br>yaa<br>-4.5V<br>Ve<br> 60µs PULSE WIDTH 60µs PULSE WIDTH<br>Tj = 150°C<br>1 ail44<br>0.1 1 10 100 1000<br>-VDS, Drain-to-Source Voltage (V)<br>-ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br> **==> picture [496 x 569] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>VGS VGS<br>TOP -15V TOP -15V<br>-10V -10V<br>-8.0V -8.0V<br>-7.0V -7.0V<br>-6.0V -6.0V<br>100 -5.5V -5.0V 100 -5.5V -5.0V 5.5V<br>f BOTTOM -4.5V 4 BOTTOM -4.5V<br>10<br>10 gg yaa<br>-4.5V<br>Zuei Ve<br>-4.5V<br> 60µs PULSE WIDTH 60µs PULSE WIDTH 60µs PULSE WIDTH<br>Tj = 150°C<br>1 Csail Tj = 25°C 1 ail44<br>0.1 1 10 100<br>0.1 1 10 100 1000<br>-VDS, Drain-to-Source Voltage (V)<br>-VDS, Drain-to-Source Voltage (V)<br>Fig. 1 Typical Output Characteristics Fig. 2 Typical Output Characteristics<br>1000.0 40<br>TJ = 25°C TJ = 25°C<br>100.0 TJ = 150°C 30<br>TOE<br>TJ = 150°C<br>10.0 YT 20 =n<br>1.0 ME 10 ann<br>VDS = -25V VDS = -10V<br> 60µs PULSE WIDTH 380µs PULSE WIDTH<br>0.1 |[i 0 f p<br>3 4 5 6 7 8 9 10 11 12 13 14 0 20 40 60 80<br>-VGS, Gate-to-Source Voltage (V) -ID, Drain-to-Source Current (A)<br>Gfs, Forward Transconductance (S)<br>-ID, Drain-to-Source Current (A)<br>-ID, Drain-to-Source Current (A)<br>)<br>-ID, Drain-to-Source Current<br>**----- End of picture text -----**<br> **Fig. 2** Typical Output Characteristics **Fig. 3** Typical Transfer Characteristics **Fig. 4** Typical Forward Trans conductance vs. Drain Current 3 2015-11-13 ~~_0UC~C~C~C~t~t~tstStSOTTTOOOTO~~ AUIRF4905S/L **==> picture [509 x 589] intentionally omitted <==** **----- Start of picture text -----**<br> 7000 20<br>VGS = 0V, f = 1 MHZ<br>Ciss = Cgs + Cgd, Cds SHORTED I D = -42A<br>6000 V = -44V<br>5000 CCrss oss = C= Cds gd + Cgd 16 VDS= -28V VDS= DS -11V<br>4000 Se Ciss ee 12 eS<br>3000 SSM 1 Y<br>SELES ST 8 aoa<br>Coss<br>2000<br>CPC = a<br>4<br>1000 Crss<br>0 mansi FST 0 Ann<br>1 10 100 0 40 80 120 160 200<br>-VDS, Drain-to-Source Voltage (V) QG Total Gate Charge (nC)<br>Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage<br>1000.0 1000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)(on)<br>100.0<br>T7, TJ = 150°C 100 ase 100µsec<br>1msececc<br>10.0<br>10 m sec<br>ay/4ee rane<br>10 LIMITED BY PACKAGE<br>TJ = 25°C<br>1.0 DC<br>Tc = 25°C°CC<br>Tj = 150°C°CC<br>VGS = 0V Single Pulse<br>0.1 Hh 1 °<br>0.0 0.4 0.8 1.2 1.6 2.0 0 1 10 100<br>-VSD, Source-to-Drain Voltage (V) -VDS , Drain-toSource Voltage (V)<br>-ISD, Reverse Drain Current (A) -ID, Drain-to-Source Current (A)<br>C, Capacitance (pF)<br>-VGS, Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br> **Fig 6.** Typical Gate Charge vs. Gate-to-Source Voltage **==> picture [206 x 196] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)(on)<br>100<br>ase 100µsec<br>1msececc<br>10 m sec<br>rane<br>10 LIMITED BY PACKAGE<br>DC<br>Tc = 25°C°CC<br>Tj = 150°C°CC<br>Single Pulse<br>°<br>1<br>0 1 10 100<br>-VDS , Drain-toSource Voltage (V)<br>-ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br> **Fig. 7** Typical Source-to-Drain Diode Forward Voltage **Fig 8.** Maximum Safe Operating Area 4 2015-11-13 ~~=-—[™©.] oO~~ AUIRF4905S/L **==> picture [209 x 195] intentionally omitted <==** **----- Start of picture text -----**<br> 80<br>LIMITED BY PACKAGE<br>60<br>aS on<br>40<br>To \<br>20<br>|<br>0<br>25 50 75 100 125 150<br> TC , Case Temperature (°C)<br>-ID , Drain Current (A)<br>**----- End of picture text -----**<br> **==> picture [217 x 196] intentionally omitted <==** **----- Start of picture text -----**<br> 2.0<br>ID = -42A<br>V GS = -10V<br>1.5<br>1.0<br>LATEpae<br>0.5<br>-60 -40 -20 0 20 40 60 80 100 120 140 160<br>TJ , Junction Temperature (°C)<br>RDS(on) , Drain-to-Source On Resistance (Normalized)<br>**----- End of picture text -----**<br> **Fig 9.** Maximum Drain Current vs. Case Temperature **Fig 10.** Normalized On-Resistance vs. Temperature **==> picture [423 x 197] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>TM Ln a<br>D = 0.50<br>TLL<br>0.20<br>0.1<br>0.10<br>0.05 aoei oma R 1 R1 lll R 2 R2 R 3 R 3 coir Ri ( ° C/W) i (sec)<br> J J CC 0.1165 0.000068<br>0.02 0.01 1 1 2 2 3 3 0.3734 0.002347<br>0.01<br>Ci= Ci= iRiiRi 0.2608 0.014811<br>= a ee<br>Notes:<br>SINGLE PULSE<br>1. Duty Factor D = t1/t2<br>( THERMAL RESPONSE )<br>2. Peak Tj = P dm x Zthjc + Tc<br>0.001<br>1E-006 1E-005 0.0001 0.001 0.01 0.1<br>t1 , Rectangular Pulse Duration (sec)<br>Thermal Response ( Z thJC )<br>**----- End of picture text -----**<br> **Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 2015-11-13 5 ~~Cinfineon~~ AUIRF4905S/L ~~[|~~ **Fig 12a.** Unclamped Inductive Test Circuit **==> picture [211 x 197] intentionally omitted <==** **----- Start of picture text -----**<br> 600<br> ID<br>TOP -17A<br>500<br> -30A<br>BOTTOM -42A<br>400<br>300<br>Pe\ |} ff<br>200 Gn<br>a<br>100<br>0 ———_<br>25 |Se 50 75 100 125 150<br>Starting TJ, Junction Temperature (°C)<br>EAS, Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br> **Fig 12b.** Unclamped Inductive Waveforms **Fig 12c.** Maximum Avalanche Energy vs. Drain Current **Fig 13a.** Gate Charge Test Circuit **==> picture [212 x 196] intentionally omitted <==** **----- Start of picture text -----**<br> 3.6<br>y<br>3.2 aN NA<br>ID = -250µA<br>2.8 aN<br>2.4<br>2.0<br>-75 -50 -25 0 25 50 75 100 125 150<br>TJ , Temperature ( °C )<br>-VGS(th) Gate threshold Voltage (V)<br>**----- End of picture text -----**<br> **Fig 14.** Threshold Voltage vs. Temperature **Fig 13b.** Gate Charge Waveform 6 2015-11-13 ~~Cinfineon~~ AUIRF4905S/L ~~_l__LLL~~ **==> picture [432 x 198] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>Duty Cycle = Single Pulse<br>100 Allowed avalanche Current vs<br>St 0.01 avalanche pulsewidth, tav<br>assuming Tj = 25°C due to<br>0.05 avalanche losses. Note: In no<br>10 0.10 case should Tj be allowed to<br>exceed Tjmax<br>1 EAICEILI<br>0.1<br>1.0E-06 1.0E-05 1.0E-04 1.0E-03 LLIN 1.0E-02 ATT 1.0E-01<br>tav (sec)<br>Avalanche Current (A)<br>**----- End of picture text -----**<br> **Fig 15.** Avalanche Current vs. Pulse width **Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.infineon.com)** 1. Avalanche failures assumption: **==> picture [213 x 196] intentionally omitted <==** **----- Start of picture text -----**<br> 160<br>TOP Single Pulse<br>BOTTOM 1% Duty Cycle<br>ID = -42A<br>120<br>i<br>80<br>NTT<br>40<br>ESET<br>LLL SSL<br>0<br>25 50 75 100 125 150<br>Starting TJ , Junction Temperature (°C)<br>EAR , Avalanche Energy (mJ)<br>**----- End of picture text -----**<br> - Purely a thermal phenomenon and failure occurs at a temperature far in - excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long as Tjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 12a, 12b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 14, 15). - tav = Average time in avalanche. - D = Duty cycle in avalanche = tav ·f - ZthJC(D, tav) = Transient thermal resistance, see Figures 13) **PD (ave) = 1/2 ( 1.3·BV·Iav) =** **T/ ZthJC Iav = 2** **T/ [1.3·BV·Zth]** **==> picture [69 x 9] intentionally omitted <==** **Fig 16.** Maximum Avalanche Energy vs. Temperature 2015-11-13 7 ~~Cinfir~~ AUIRF4905S/L ~~_~~ **Fig 17.** Peak Diode Recovery dv/dt Test Circuit for P-Channel HEXFET® Power MOSFETs **Fig 18a.** Switching Time Test Circuit **Fig 18b.** Switching Time Waveforms 8 2015-11-13 AUIRF4905S/L ~~_l__LLL~~ ## ~~Cinfin eon~~ **D[2] Pak (TO-263AB) Package Outline** (Dimensions are shown in millimeters (inches)) ## **D[2] Pak (TO-263AB) Part Marking Information** **==> picture [331 x 148] intentionally omitted <==** **----- Start of picture text -----**<br> Part Number AUIRF4905S<br>Date Code<br>IR Logo T é4R YWWA Y= Year<br>WW= Work Week<br><br>XX XX<br>[|<br>Lot Code<br>**----- End of picture text -----**<br> Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 9 2015-11-13 AUIRF4905S/L ~~_l__LLL~~ ## ~~Cinfineon~~ **TO-262 Package Outline** (Dimensions are shown in millimeters (inches) ## **TO-262 Part Marking Information** **==> picture [330 x 148] intentionally omitted <==** **----- Start of picture text -----**<br> Part Number AUIRF4905L<br>Date Code<br>IR Logo 1 é4R YWWA Y= Year<br>WW= Work Week<br><br>XX XX<br>[|<br>Lot Code<br>**----- End of picture text -----**<br> Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 10 2015-11-13 AUIRF4905S/L ~~_l__LLL~~ ## ~~Cinfineon~~ ## **D[2] Pak (TO-263AB) Tape & Reel Information** (Dimensions are shown in millimeters (inches)) **==> picture [386 x 409] intentionally omitted <==** **----- Start of picture text -----**<br> TRR<br>1.60 (.063)<br>1.50 (.059)<br>1.60 (.063)<br>4.10 (.161)<br>3.90 (.153) 1.50 (.059) 0.368 (.0145)<br>0.342 (.0135)<br>FEED DIRECTION 1.85 (.073) 11.60 (.457)<br>1.65 (.065) 11.40 (.449) 24.30 (.957)<br>15.42 (.609)<br>23.90 (.941)<br>15.22 (.601)<br>TRL<br>1.75 (.069)<br>10.90 (.429) 1.25 (.049)<br>10.70 (.421) 4.72 (.136)<br>16.10 (.634) 4.52 (.178)<br>15.90 (.626)<br>FEED DIRECTION<br>13.50 (.532) 27.40 (1.079)<br>12.80 (.504) 23.90 (.941)<br>4<br>330.00 60.00 (2.362)<br>(14.173) MIN.<br> MAX.<br>30.40 (1.197)<br>NOTES : MAX.<br>1. COMFORMS TO EIA-418.<br>26.40 (1.039) 4<br>2. CONTROLLING DIMENSION: MILLIMETER. 24.40 (.961)<br>3. DIMENSION MEASURED @ HUB. 3<br>**----- End of picture text -----**<br> 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 11 2015-11-13 AUIRF4905S/L ~~ee&»«=«€#=»™7§Ee&~~ **Qualification Information** |**Qualification Information**|**Qualification Information**||| |---|---|---|---| |**Qualification Level**||Automotive<br>(per AEC-Q101)|| |||Comments: This part number(s) passed Automotive qualification. Infineon’s<br>Industrial and Consumer qualification level is granted by extension of the higher<br>Automotive level.|| |**Moisture Sensitivity Level**||TO-262 Pak|MSL1| |||D2-Pak|| |**ESD**|Machine Model|Class M4 (+/- 425V)† <br>AEC-Q101-002|| ||Human Body Model|Class H2 (+/- 4000V)† <br>AEC-Q101-001|| ||Charged Device Model|Class C5 (+/- 1125V)† <br>AEC-Q101-005|| |**RoHS Compliant**||Yes|| - Highest passing voltage. ## **Revision History** |**Date**|||**Comments**| |---|---|---|---| |11/13/2015||Updated datasheet with corporate template|| |||Corrected orderingtable onpage 1.|| **Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2015 All Rights Reserved.** ## **IMPORTANT NOTICE** The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office (www.infineon.com). ## **WARNINGS** Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not ~~_~~ be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 12 2015-11-13
Updated at March 12, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
About Novapart
Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
Learn more →Stock Shortage Specialist
When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
Request a quote →Compliant Alternatives
We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
BOM Analysis service →