AUIRF4905

> **AUTOMOTIVE GRADE** AUIRF4905 ~~—~~ 

HEXFET[® ] Power MOSFET 

## ~~Cinfineon~~ 

## **Features** 

- Advanced Planar Technology 

- Low On-Resistance 

- Dynamic dV/dT Rating 

- 175°C Operating Temperature 

- Fast Switching 

- Fully Avalanche Rated 

- Repetitive Avalanche Allowed up to Tjmax 

- Lead-Free, RoHS Compliant 

- Automotive Qualified * 

## **Description** 

Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications. 

**VDSS -55V RDS(on)   max. 0.02**  **ID -74A** ~~——~~ S D G TO-220 AUIRF4905 **G D S** Gate Drain Source ~~FF~~ 

|**Base part number**<br>**Package Type**<br>**Standard Pack**<br>**Orderable Part Number**<br>**Form**<br>**Quantity**<br>AUIRF4905<br>TO-220<br>Tube<br>50<br>AUIRF4905<br>~~———_—————~~|
|---|
|**Absolute Maximum Ratings**|
|Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress|
|ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not|
|implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance|
|and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless|
|otherwise specified.|
|**Symbol**<br>**Parameter**<br>**Max.**<br>**Units**<br>ID@ TC= 25°C<br>Continuous Drain Current, VGS@ 10V (Silicon Limited)<br>-74<br>A<br>ID @TC= 100°C<br>Continuous Drain Current,VGS @10V(Silicon Limited)<br>-52<br>IDM<br>Pulsed Drain Current<br>-260<br>PD@TC= 25°C<br>Maximum Power Dissipation<br>200<br>W<br>Linear Derating Factor<br>1.3<br>W/°C<br>~~—————~~|
|VGS<br>Gate-to-SourceVoltage<br>± 20<br>V|
|EAS<br>Single Pulse Avalanche Energy (ThermallyLimited) <br>930<br>mJ|
|IAR<br>Avalanche Current<br>-38<br>A|
|EAR<br>Repetitive Avalanche Energy <br>20<br>mJ<br>dv/dt<br>Peak Diode Recoverydv/dt<br>-5.0<br>V/ns<br>TJ<br>Operating Junction and<br>-55  to + 175<br>TSTG<br>Storage Temperature Range<br>°C<br>SolderingTemperature,for 10 seconds(1.6mm from case)<br>300<br>Mountingtorque,6-32 or M3 screw<br>10 lbf•in(1.1N•m)<br> <br>~~ae~~|
|**Thermal Resistance**|
|**Symbol**<br>**Parameter**<br>**Typ.**<br>**Max.**<br>**Units**<br>RJC<br>Junction-to-Case<br>–––<br>0.75<br>°C/W<br>RCS<br>Case-to-Sink, Flat, Greased Surface<br>0.50<br>–––<br>RJA<br>Junction-to-Ambient<br>–––<br>62<br>~~—————~~<br>~~ae~~|
|HEXFET® is a registered trademark of Infineon.|
|*****Qualification standards can be found atwww.infineon.com<br>~~—_——~~|



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AUIRF4905 

**Static @ TJ = 25°C (unless otherwise specified)** 

|~~es~~|||||||
|---|---|---|---|---|---|---|
|Qg<br>~~es~~|Total Gate Charge|–––|–––|180|nC<br>~~fo~~|ID= -38A<br>VDS= -44V<br>VGS= -10V,SeeFig 6 and13 <br>~~fo~~|
|g<br>Qgs<br>~~es~~<br>~~es~~|Gate-to-Source Charge|–––|–––|32|||
|gs<br>Qgd<br>~~es~~<br>~~**e**e~~|Gate-to-Drain Charge|–––|–––|86|||
|gd<br>td(on)<br>~~es~~<br>~~**e**e~~|Turn-On DelayTime|–––|18|–––|ns<br>~~fo~~<br>~~+]fo~~|VDD= -28V<br>ID= -38A<br>RG= 2.5<br>RD=0.72See Fig. 10<br>~~fo~~<br>~~fo~~|
|d(on)<br>tr<br>~~**e**e~~<br>~~ee~~|RiseTime|–––|99|–––|||
|td(off)<br>~~**e**e~~<br>~~ee~~<br>~~s~~|Turn-Off DelayTime<br>~~I~~|–––<br>~~I~~|61<br>~~I~~|–––<br>~~I~~|||
|d(off)<br>tf<br>~~**e**e~~<br>~~ee~~<br>~~s~~<br>~~H+}~~|Fall Time<br>~~I~~<br>~~H+}~~|–––<br>~~I~~<br>~~H+}~~|96<br>~~I~~<br>~~H+}+]~~|–––<br>~~I~~<br>~~+]~~|||
|LD<br>~~s~~<br>~~H+}~~|Internal Drain Inductance<br>~~I~~<br>~~H+}~~|–––<br>~~I~~<br>~~H+}~~|4.5<br>~~I~~<br>~~H+}+]~~|–––<br>~~I~~<br>~~+]~~|nH<br>~~+]fo~~|Between lead,<br>6mm (0.25in.)<br>from package<br>and center of die contact<br>~~fo~~|
|LS<br>~~H+}~~<br>~~a~~|Internal Source Inductance<br>~~H+}~~|–––<br>~~H+}~~|7.5<br>~~H+}+]~~|–––<br>~~+]~~|||
|Ciss<br>~~H+}~~<br>~~a~~|Input Capacitance<br>~~H+}~~|–––<br>~~H+}~~|3400<br>~~H+} +]~~|–––<br>~~+]~~|pF<br>~~+] fo~~|VGS= 0V<br>VDS= -25V<br>ƒ= 1.0MHz, See Fig. 5<br>~~fo~~|
|Coss<br>~~a~~<br>~~ee~~|Output Capacitance|–––|1400|–––|||
|Crss<br>~~ee~~|Reverse Transfer Capacitance|–––|640|–––|||
|**Diode Characteristics**<br>~~ee~~<br>~~esnD~~<br>~~(OR~~<br>~~(OO~~<br>~~OS(~~|||||||
|~~es~~|**Parameter **<br>~~nD~~|**Min. T**<br>~~nD~~<br>~~(OR~~|**Min. Typ. M**<br>~~nD~~<br>~~(OO~~|**. Max.**<br>~~nD~~<br>~~OS~~|**Units**<br>~~nD~~<br>~~OS~~|**Conditions**<br>~~nD~~<br>~~(~~|
|IS<br>~~es~~<br>~~fT~~|Continuous Source Current<br>(Body Diode)<br>~~nD~~<br>~~fT~~|–––<br>~~nD~~<br>~~(OR~~<br>~~fT~~|–––<br>~~nD~~<br>~~(OO~~<br>~~fT~~|-74<br>~~nD~~<br>~~OS~~<br>~~fT~~|A<br>~~nD~~<br>~~OS~~<br>~~fT~~|MOSFET symbol<br>showing  the<br>integral reverse<br>p-njunctiondiode.<br>~~nD~~<br>~~(~~<br>~~fT~~<br>~~e~~|
|ISM<br>~~fT~~<br>~~a~~<br>~~ee~~|Pulsed Source Current<br>(BodyDiode)<br>~~fT~~<br>~~a~~<br>~~Ds~~|–––<br>~~fT~~<br>~~Ds~~|–––<br>~~fT~~<br>~~(RD~~|-260<br>~~fT~~<br>~~(RD~~|||
|VSD<br>~~fT~~<br>~~a~~<br>~~ee~~<br>~~Ce~~|Diode Forward Voltage<br>~~fT~~<br>~~a~~<br>~~Ds~~|–––<br>~~fT~~<br>~~Ds~~|–––<br>~~fT~~<br>~~(RD~~|-1.6<br>~~fT~~<br>~~(RD~~|V<br>~~fT~~|TJ= 25°C,IS= -38A,VGS= 0V<br>~~fT~~<br>~~e~~|
|trr<br>~~ee~~<br>~~Ce~~<br>~~es~~<br>~~ee~~|Reverse Recovery Time<br>~~Ds~~<br>~~nD~~<br>|–––<br>~~Ds~~<br>~~nD~~<br>~~I~~<br>|89<br>~~(RD~~<br>~~nD~~<br>~~I~~<br>|130<br>~~(RD~~<br>~~nD~~<br>|ns<br>~~nD~~<br>|TJ= 25°C ,IF= -38A<br>nC   di/dt = 100A/µs<br>|
|Qrr<br>~~Ce~~<br>~~es~~<br>~~ee~~|Reverse RecoveryCharge<br>~~nD~~<br>|–––<br>~~nD~~<br>~~I~~<br>|230<br>~~nD~~<br>~~I~~<br>|350<br>~~nD~~<br>|nC   di/dt = 100A/<br>~~nD~~<br>||
|ton<br>~~Ce~~<br>~~es~~<br>~~ee~~|Forward Turn-On Time<br>~~nD~~<br>~~ns~~|Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)<br>~~nD~~<br>~~II~~<br>~~ns~~|||||



## **Notes:** 

 Repetitive rating;  pulse width limited by max. junction temperature. (See fig.11) 

 Starting  TJ = 25°C, L = 1.3mH, RG = 25, IAS = -38A. (See Figure 12) 

 ISD  -38A, di/dt  -270A/µs, VDD  V(BR)DSS, TJ  175°C 

-  Pulse width 300µs; duty cycle 2%. 

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**----- Start of picture text -----**<br>
1000 1000<br>                   VGS                     VGS<br> TOP          - 15V  TOP          - 15V<br>- 10V                   - 10V<br>- 8.0V - 8.0V<br>                  - 7.0V                   - 7.0V<br>                  - 6.0V                   - 6.0V<br>                  - 5.5V                   - 5.5V<br>                  - 5.0V                   - 5.0V<br> BOTTOM  - 4.5V  BOTTOM  - 4.5V<br>100 100<br>Rs elt<br>-4.5V<br>10 -4.5V 10<br> 20µs PULSE WIDTH   20µs PULSE WIDTH<br>1  T   = 25°Cc A 1  T   = 175°CC<br>0.1 1 10 100 0.1 1 10 100<br>-V     , Drain-to-Source Voltage (V)DS -V     , Drain-to-Source Voltage (V)DS<br>Fig. 1  Typical Output Characteristics  Fig. 2  Typical Output Characteristics<br>1000 2.0<br> I    = -64AD<br>1.5<br>T  = 25°CJ LWT<br>100<br>T  = 175°CJ<br>1.0<br>ee TDDERTT<br>10<br>0.5<br>f- aL<br> V     = -25V DS<br>1 PLL)  20µs PULSE WIDTH  0.0 err  V      = -10V GS A<br>A<br>4 5 6 7 8 9 10 -60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>-V     , Gate-to-Source Voltage (V)GS T   , Junction Temperature (°C)J<br>Fig. 3  Typical Transfer Characteristics Fig. 4  Normalized On-Resistance<br>Vs. Temperature<br>D D<br>-I   , Drain-to-Source Current (A) -I   , Drain-to-Source Current (A)<br>(Normalized)<br>D<br>-I   , Drain-to-Source Current (A)<br>DS(on)<br>R           ,  Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
7000 20<br>V      = 0V,         f = 1MHzGS  I    = -38AD<br>C      = C     + C     ,   C     SHORTED iss         gs         gd         ds<br>6000 C      = Crss         gd  V      = -44VDS<br>S C      = C     + Coss        ds         gd O 16  V      = -28VDS :<br>5000<br>C iss<br>12<br>4000<br>SSE EHH y<br>C oss<br>3000 wf] ELA<br>8<br>2000<br>C rss<br>4<br>1000<br>PENN a<br> FOR TEST CIRCUIT<br>    SEE FIGURE 13<br>0 A 0<br>1 es 10 eel 100 e e 0 40 80 120 160 200<br>-V     , Drain-to-Source Voltage (V)DS Q   , Total Gate Charge (nC)G<br>C, Capacitance (pF)<br>GS<br>-V     , Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 5.** Typical Capacitance vs. Drain-to-Source Voltage 

**Fig 6.** Typical Gate Charge vs. Gate-to-Source Voltage 

**==> picture [256 x 249] intentionally omitted <==**

**----- Start of picture text -----**<br>
1000<br>100<br>T  = 175°CJ<br>T  = 25°C J<br>10<br>V      = 0V GS<br>1<br>0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8<br>-V     , Source-to-Drain Voltage (V)SD<br>SD<br>-I     , Reverse Drain Current (A)<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
1000<br> OPERATION IN THIS AREA LIMITED<br>                       BY R DS(on)<br>100<br>100µs<br>1ms<br>10<br>10ms<br> T     = 25°CC<br> T     = 175°CJ<br> Single Pulse<br>1<br>1 10 100<br>-V     , Drain-to-Source Voltage (V)DS<br>D<br>-I   , Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig. 7** Typical Source-to-Drain Diode 

Forward Voltage 

**Fig 8.** Maximum Safe Operating Area 

4 2017-09-20 ~~="~~ 

~~Cinfineon~~ 

AUIRF4905 ~~LL~~ 

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**----- Start of picture text -----**<br>
80<br>NGSRSSR00008 vee a<br>60<br>PANE vs aur |<br>COPE PSN : ”<br>40 PEEEEEPN EEE ov<br>POPPE sean<br>PEEP EEN"<br>20<br>Fig 10a.   Switching Time Test Circuit<br>COTTA<br>PEEP EEE<br>0<br>25 50T   , Case TemperatureC 75 100 125 (  C)° 150 175 Yessirtd(on) tr ta(ott) tf<br>: A<br>Fig 9.   Maximum Drain Current vs.<br>\/<br>a<br>Fig 10b.   Switching Time Waveforms<br> 1 D = 0.50 SSHSa eee—es<br>0.20<br>A<br>0.1 0.10<br>PDM<br>0.05<br>t1<br>0.02 SINGLE PULSE t2<br>0.01 (THERMAL RESPONSE)<br>Notes:<br>1. Duty factor D = t   / t1 2<br>2. Peak T J = P DM x  ZthJC + TC<br>0.01 gee ee<br>0.00001 0.0001 0.001 0.01 0.1  1<br>t  , Rectangular Pulse Duration (sec)1<br>I   , Drain Current (A)D<br>thJC<br>(Z        )<br>Thermal Response<br>**----- End of picture text -----**<br>


**Fig 10a.** Switching Time Test Circuit 

**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

5 ~~=~~ 

°° ~~°°” ©~~ 

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AUIRF4905 ~~|~~ 

**Fig 12a.** Unclamped Inductive Test Circuit 

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**----- Start of picture text -----**<br>
2500<br>                    ID<br>TOP            -16A<br>                   -27A<br>2000 \ BOTTOM    -38A<br>\<br>1500<br>1000<br>500<br>Sa<br>0 | S88|<br>25 50 75 100 125 150 175<br>Starting T  , Junction Temperature (°C)J<br>AS<br>E     ,   Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 12c.** Maximum Avalanche Energy vs. Drain Current 

**Fig 12b.** Unclamped Inductive Waveforms 

**Fig 13a.** Gate Charge Waveform 

**Fig 13b.** Gate Charge Test Circuit 

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AUIRF4905 ~~_~~ 

**Fig 14.** Peak Diode Recovery dv/dt Test Circuit for P-Channel HEXFET® Power MOSFETs 

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AUIRF4905 ~~LLL~~ 

## ~~Cinfin eon~~ 

**TO-220AB Package Outline** (Dimensions are shown in millimeters (inches)) 

## **TO-220 Part Marking Information** 

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Part Number  AUIRF4905<br>Date Code<br>IR Logo  T é4R YWWA  Y= Year<br>WW= Work Week<br><br>XX         XX<br>[|<br>Lot Code<br>**----- End of picture text -----**<br>


Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 

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AUIRF4905 ~~a~~ 

## **Qualification Information** 

|**Qualification Information**|**Qualification Information**|||
|---|---|---|---|
|**Qualification Level**||Automotive<br>(per AEC-Q101)||
|||Comments: This part number(s) passed Automotive qualification. Infineon’s<br>Industrial and Consumer qualification level is granted by extension of the higher<br>Automotive level.||
|**Moisture Sensitivity Level**||3L-TO-220|N/A|
|**ESD**|Machine Model|Class M4 (+/- 425V)† <br>AEC-Q101-002||
||Human Body Model|Class H2 (+/- 4000V)† <br>AEC-Q101-001||
||Charged Device Model|Class C5 (+/- 1125V)† <br>AEC-Q101-005||
|**RoHS Compliant**||Yes||



- Highest passing voltage. 

|**Revision History**|**Revision History**|||
|---|---|---|---|
|**Date**|||**Comments**|
|09/20/2017|||Updated datasheet with corporate template|
||||Corrected typo error onpackage outline andpart markingonpage 8.|



**Published by Infineon Technologies AG 81726 München, Germany** 

**© Infineon Technologies AG 2015 All Rights Reserved.** 

## **IMPORTANT NOTICE** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office (www.infineon.com). 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not ~~_~~ be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 

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