AUIRF3805

AUIRF3805 AUIRF3805S AUIRF3805L ~~a~~ 

**AUTOMOTIVE GRADE** 

## ~~Cinfineon~~ 

## **Features** 

- Advanced Process Technology 

- Ultra Low On-Resistance 

- 175°C Operating Temperature 

- Fast Switching 

- Repetitive Avalanche Allowed up to Tjmax 

|**VDSS**|**55V**|
|---|---|
|**RDS(on)   typ.**|**2.6m**|
|**max.**|**3.3m**|
|**ID (Silicon Limited)**|**210A**|
|**ID (Package Limited)**|**160A**|



- Lead-Free, RoHS Compliant 

- Automotive Qualified * 

| Lead-Free, RoHS CompliantLead-Free, RoHS Compliant<br> Automotive Qualified *Automotive Qualified *|||**D (Package Limited)**|**D (Package Limited)**|**D (Package Limited)**|
|---|---|---|---|---|---|
| Automotive Qualified *Automotive Qualified *|||||D<br>D|
|**Description**||||||
|Specifically<br>designed<br>for<br>Automotive<br>applications,<br>this<br>HEXFET® Power MOSFET utilizes the latest processing<br>techniques to achieve extremely low on-resistance per silicon|||S<br>D<br>G||S<br>G<br>S<br>GD|
|area. Additional features of this design are a 175°C junction|||TO-220AB||D2Pak<br>TO-262|
|operating temperature, fast switching speed and improved|||AUIRF3805||AUIRF3805S<br>AUIRF3805L|
|repetitive avalanche rating. These features combine to make||||||
|this design an extremely efficient and reliable device for use in<br>Automotive applications and wide variety of other applications.|**G**<br>**D**<br>**S**<br>Gate<br>Drain<br>Source<br>~~a~~|||||
|**Base part number**<br>**Package Type**<br>**Standard Pack**|||**Standard Pack**||**Orderable Part Number**|
|**Form**|||**Quantity**|||
|AUIRF3805<br>TO-220<br>Tube|||50||AUIRF3805|
|AUIRF3805L<br>TO-262<br>Tube|||50||AUIRF3805L|
|AUIRF3805S<br>Tube<br>Tape andReel Left<br>D2-Pak|||50<br>800||AUIRF3805S<br>AUIRF3805STRL|



## **Absolute Maximum Ratings** 

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.   These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified. 

|**Symbol**<br>~~re~~|**Parameter**<br>~~(~~|**Max.**|**Units**|
|---|---|---|---|
|ID@ TC= 25°C<br>~~re~~|Continuous Drain Current, VGS@ 10V (Silicon Limited)<br>~~(~~|210|A|
|ID @TC= 100°C|Continuous Drain Current,VGS @10V(Silicon Limited)|150||
|ID@ TC= 25°C|Continuous Drain Current, VGS@ 10V (Package Limited)|160||
|IDM|Pulsed Drain Current|890||
|PD@TC= 25°C<br>~~a~~|Maximum Power Dissipation<br>~~a~~|300<br>~~a~~|W<br>~~a~~|
|~~a~~|Linear DeratingFactor<br>~~a~~<br>~~a~~|2.0<br>~~a~~|W/°C<br>~~a~~|
|VGS<br>~~—————~~|Gate-to-SourceVoltage<br>~~—————~~<br>~~a~~|± 20<br>~~—————~~|V<br>~~—————~~|
|EAS<br>~~—————~~|Single Pulse Avalanche Energy (ThermallyLimited) <br>~~—————~~<br>~~a~~|650<br>~~—————~~|mJ<br>~~—————~~|
|EAS(tested)<br>~~—————~~|Single Pulse Avalanche EnergyTested Value<br>~~—————~~<br>~~a~~|940<br>~~—————~~||
|IAR<br>~~ee~~|Avalanche Current<br>~~a~~<br>~~ee~~|See Fig.15,16, 12a, 12b<br>~~ee~~<br>~~eee~~|A<br>~~ee~~|
|EAR<br>~~ee~~<br>~~ee~~|Repetitive Avalanche Energy <br>~~ee~~<br>~~ee~~||mJ<br>~~ee~~<br>~~eee~~|
|TJ<br>TSTG<br>~~ee~~|Operating Junction and<br>Storage Temperature Range<br>~~ee~~|-55  to + 175<br>~~eee~~|°C<br>~~eee~~|
|~~ee~~|SolderingTemperature,for 10 seconds(1.6mm from case)<br>~~ee~~|300<br>~~eee~~||
|~~ee~~|Mountingtorque,6-32 or M3 screw<br>~~ee ~~|10 lbf•in(1.1N•m)<br> <br> ~~eee~~|~~eee~~|



***** Qualification standards can be found at www.infineon.com 

1 

2015-9-30 

~~Cinfin eon~~ 

AUIRF3805/S/L ~~ll~~ 

**Static @ TJ = 25°C (unless otherwise specified)** 

|Qg<br>~~es~~|Total Gate Charge<br>~~es~~|–––<br>~~es~~|190<br>~~es~~|290<br>~~es~~|nC|ID= 75A**<br>VDS= 44V<br>VGS= 10V|
|---|---|---|---|---|---|---|
|g<br>Qgs<br>~~es~~<br>~~Rs~~|Gate-to-Source Charge<br>~~es~~|–––<br>~~es~~|52<br>~~es~~|–––<br>~~es~~|||
|Qgd<br>~~Rs~~<br>~~es~~|Gate-to-Drain Charge|–––|72|–––|||
|gd<br>td(on)<br>~~Rs~~<br>~~es~~|Turn-On Delay Time|–––|150|–––|ns<br>~~+++,~~]|VDD= 28V<br>ID= 75A**<br>RG= 2.6<br>VGS= 10V<br>~~ee~~|
|d(on)<br>tr<br>~~es~~<br>~~es~~|Rise Time|–––|20|–––|||
|td(off)<br>~~es~~<br>~~es~~|Turn-Off DelayTime<br>|–––<br>|93<br>|–––<br>|||
|d(off)<br>tf<br>~~es~~<br>~~es+++,~~|Fall Time<br>~~+++,~~|–––<br>~~+++,~~|87<br>~~+++,~~|–––<br>~~+++,~~|||
|LD<br>~~es+++,~~|Internal Drain Inductance<br>~~+++,~~|–––<br>~~+++,~~|4.5<br>~~+++,~~|–––<br>~~+++,~~|nH<br>~~+++,~~]|Between lead,<br>6mm (0.25in.)<br>from package<br>and center of die contact<br>~~ee~~|
|LS<br>~~+++,~~|Internal Source Inductance<br>~~+++,~~|–––<br>~~+++,~~|7.5<br>~~+++,~~|–––<br>~~+++,~~|||
|Ciss<br>~~+++,~~<br>~~esnner~~|Input Capacitance<br>~~+++,~~<br>~~nner~~|–––<br>~~+++,~~<br>~~nner~~|7960<br>~~+++,~~<br>~~nner~~|–––<br>~~+++,~~<br>~~nner~~|pF<br>~~+++,~~ ]<br>~~nner~~|VGS= 0V<br>VDS= 25V<br>ƒ= 1.0MHz,See Fig. 5<br>~~ee~~<br>~~PO~~|
|Coss<br>~~+++,~~<br>~~esnner~~|OutputCapacitance<br>~~+++,~~<br>~~nner~~|–––<br>~~+++,~~<br>~~nner~~|1260<br>~~+++,~~<br>~~nner~~|–––<br>~~+++,~~<br>~~nner~~|||
|Crss<br>~~+++,~~<br>~~esnner~~<br>~~es~~|ReverseTransferCapacitance<br>~~+++,~~<br>~~nner~~|–––<br>~~+++,~~<br>~~nner~~|630<br>~~+++,~~<br>~~nner~~|–––<br>~~+++,~~<br>~~nner~~|||
|Coss<br>~~nner~~<br>~~es~~<br>~~es~~|OutputCapacitance<br>~~nner~~|–––<br>~~nner~~|4400<br>~~nner~~|–––<br>~~nner~~||VGS=0V,VDS= 1.0Vƒ= 1.0MHz<br>~~PO~~<br>~~Po~~|
|Coss<br>~~nner~~<br>~~es~~<br>~~es~~<br>~~es~~|Output Capacitance<br>~~nner~~|–––<br>~~nner~~|980<br>~~nner~~|–––<br>~~nner~~||VGS=0V,VDS= 44Vƒ= 1.0MHz<br>~~PO~~<br>~~Po~~<br>~~PO~~|
|Coss eff.<br>~~nner~~<br>~~es~~<br>~~es~~|Effective Output Capacitance<br>~~nner~~|–––<br>~~nner~~|1550<br>~~nner~~|–––<br>~~nner~~||VGS= 0V,VDS= 0V to 44V<br>~~Po~~<br>~~PO~~|
|**Diode Characteristics**<br>~~nner~~<br>~~es~~<br>~~PO~~<br>~~po~~|||||||
|~~po{1}~~|**Parameter **<br>~~{1}~~|**Min.**<br>~~{1}~~|**Typ. M**<br>~~{1}~~|**. Max.**<br>~~{1}~~|**Units**<br>~~)~~|**Conditions**<br>~~gy~~|
|IS<br>~~po{1}~~|Continuous Source Current<br>(Body Diode)<br>~~{1}~~|–––<br>~~{1}~~|––– 210<br>~~{1}~~|––– 210<br>~~{1}~~|A<br>~~)~~<br>~~es~~<br>~~QO~~<br>|MOSFET symbol<br>showing  the<br>integral reverse<br>p-n junction diode.<br>~~gy~~<br>~~es~~<br>|
|ISM<br>~~{1}~~<br>~~es~~<br>~~Cee~~|Pulsed Source Current<br>(Body Diode)<br>~~{1}~~<br>~~es~~<br>|–––<br>~~{1}~~<br>~~es~~<br>~~I~~<br>|–––<br>~~{1}~~<br>~~es~~<br>~~Us~~<br>|890<br>~~{1}~~<br>~~es~~<br>~~Us~~<br>|||
|VSD<br>~~{1}~~<br>~~es~~<br>~~Cee~~|Diode Forward Voltage<br>~~{1}~~<br>~~es~~<br>|–––<br>~~{1}~~<br>~~es~~<br>~~I~~<br>|–––<br>~~{1}~~<br>~~es~~<br>~~Us~~<br>|1.3<br>~~{1}~~<br>~~es~~<br>~~Us~~<br>|V<br>~~)~~<br>~~es~~<br>~~QO~~<br>|TJ =25°C,IS=75A**,VGS =0V<br>~~gy~~<br>~~es~~<br>|
|trr<br>~~es~~<br>~~Cee~~<br>~~es~~|Reverse Recovery Time<br>~~es~~<br>~~ee~~<br>|–––<br>~~es~~<br>~~I~~<br>~~ee~~<br>|36<br>~~es~~<br>~~Us~~<br>~~ee~~<br>|54<br>~~es~~<br>~~Us~~<br>~~ee~~<br>|ns<br>~~es~~<br>~~QO~~<br>~~ee~~<br>|TJ= 25°C ,IF= 75A**, VDD= 28V<br>nC   di/dt = 100A/µs<br>~~es~~<br>~~ee~~<br>|
|Qrr<br>~~Cee~~<br>~~es~~|Reverse RecoveryCharge<br>~~ee~~<br>|–––<br>~~I~~<br>~~ee~~<br>|47<br>~~Us~~<br>~~ee~~<br>|71<br>~~Us~~<br>~~ee~~<br>|nC   di/dt = 100A/<br>~~QO~~<br>~~ee~~<br>||
|ton<br>~~Cee ~~<br>~~es~~|Forward Turn-On Time<br> ~~ee~~<br>~~Df~~|Intrinsic turn-on time is negligible(turn-on is dominated byLS+LD)<br>~~I UsQO~~<br>~~ee~~<br>~~Df~~|||||



-  Repetitive rating;  pulse width limited by max. junction temperature. (See fig. 11) 

-  This value determined from sample failure population, starting TJ = 25°C, L = 0.23mH, RG = 25, IAS = 75A, VGS =10V. 

-  Pulse width 1.0ms; duty cycle  2%. 

-  Coss eff.  is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. 

-  Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. 

-  This is only applied to TO-220AB package. 

-  This is applied to D[2] Pak When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994 

-  R is measured at TJ of approximately 90°C 

-  TO-220 device will have an Rth value of 0.45°C/W. 

- ** All AC and DC test condition based on old Package limitation current = 75A. 

2 

2015-9-30 

AUIRF3805/S/L ~~a~~ 

## ~~Cinfineon~~ 

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1000 1000<br>VGS VGS<br>TOP           15V TOP           15V<br>10V 10V<br>8.0V 8.0V<br>7.0V 7.0V<br>6.0V 6.0V<br>5.5V 5.5V<br>100 Wai 5.0V Vi 5.0V<br>BOTTOM 4.5V BOTTOM 4.5V<br>100<br>4.5V<br>10<br>4.5V<br> 60µs PULSE WIDTH  60µs PULSE WIDTH<br>Tj = 25°C Tj = 175°C<br>1 10<br>0.1 Bll 1 Ma 10 100 0.1 l. 1 wl 10 100<br>VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)<br>Fig. 1  Typical Output Characteristics  Fig. 2  Typical Output Characteristics<br>1000.0 200<br>TJ = 25°C<br>T = 175°C<br>J  160<br>100.0 S| fT eR<br>120 T J  = 175°C<br>10.0 Jit<br>TJ = 25°C 80<br>1.0 CT | | lheWZanl<br>40<br>VDS = 20V VDS = 10V<br> 60µs PULSE WIDTH 380µs PULSE WIDTH<br>fe MO T T<br>0.1 A<br>0<br>4.0 5.0 6.0 7.0 8.0<br>0 20 40 60 80 100 120 140 160 180<br>VGS, Gate-to-Source Voltage (V) ID, Drain-to-Source Current (A)<br>Gfs, Forward Transconductance (S)<br>ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A)<br>)<br>ID, Drain-to-Source Current<br>**----- End of picture text -----**<br>


**Fig. 3** Typical Transfer Characteristics 

**Fig. 4** Typical Forward Transconductance vs. Drain Current 

3 

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AUIRF3805/S/L<br>Gene<br>14000 20<br>VGS   = 0V,       f = 1 MHZGS   = 0V,       f = 1 MHZ = 0V,       f = 1 MHZ<br>Ciss   = Cgs + Cgd,  Cds SHORTEDiss   = Cgs + Cgd,  Cds SHORTED  = Cgs + Cgd,  Cds SHORTEDgs + Cgd,  Cds SHORTEDs + Cgd,  Cds SHORTED+ Cgd,  Cds SHORTEDgd,  Cds SHORTEDd,  Cds SHORTED,  Cds SHORTEDds SHORTEDSHORTED ID= 75AD= 75A= 75A VDS= 44VDS= 44V= 44V<br>12000<br>Crss   = Cgd rss   = Cgd  = Cgd gd  16 VDS= 28V<br>TT Coss  = Cds + Cgdoss  = Cds + Cgd= Cds + Cgdds + Cgd+ Cgdgdd<br>10000 | foe<br>Ciss 12<br>8000<br>Eco aay<br>6000 PERC 4<br>8<br>4000<br>4<br>2000 Sue Coss A<br>Crss<br>0 SESS 0 Aaaeee<br>1 10 100 0 50 100 150 200 250 300<br>VDS, Drain-to-Source Voltage (V)  QG  Total Gate Charge (nC)<br>VGS, Gate-to-Source Voltage (V)<br>C, Capacitance (pF)<br>**----- End of picture text -----**<br>


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14000 20<br>VGS   = 0V,       f = 1 MHZGS   = 0V,       f = 1 MHZ = 0V,       f = 1 MHZ<br>Ciss   = Cgs + Cgd,  Cds SHORTEDiss   = Cgs + Cgd,  Cds SHORTED  = Cgs + Cgd,  Cds SHORTEDgs + Cgd,  Cds SHORTEDs + Cgd,  Cds SHORTED+ Cgd,  Cds SHORTEDgd,  Cds SHORTEDd,  Cds SHORTED,  Cds SHORTEDds SHORTEDSHORTED ID= 75AD= 75A= 75A VDS= 44VDS= 44V= 44V<br>12000<br>Crss   = Cgd rss   = Cgd  = Cgd gd  16 VDS= 28V<br>TT Coss  = Cds + Cgdoss  = Cds + Cgd= Cds + Cgdds + Cgd+ Cgdgdd<br>10000 | foe<br>Ciss 12<br>8000<br>Eco aay<br>6000 PERC 4<br>8<br>4000<br>4<br>2000 Sue Coss A<br>Crss<br>0 SESS 0 eeeAaaeee<br>1 10 100 0 50 100 150 200 250 300<br>VDS, Drain-to-Source Voltage (V)  QG  Total Gate Charge (nC)<br>Fig 5.  Typical Capacitance vs.   Fig 6.  Typical Gate Charge vs.<br>      Drain-to-Source Voltage       Gate-to-Source Voltage<br>1000.0 10000<br>OPERATION IN THIS AREA<br>LIMITED BY RDS(on)<br>TJ = 175°C 1000<br>100.0<br>100µsec<br>100<br>10.0<br>10msec<br>10 1msec<br>T J  = 25°C<br>1.0<br>1 Tc = 25°C<br>Tj = 175°C<br>VGS = 0V Single Pulse<br>0.1 ftPilea 0.1 RE S eniti<br>0.0 0.4 0.8 1.2 1.6 2.0 2.4 1 10 100 1000<br>VSD, Source-to-Drain Voltage (V) VDS  , Drain-toSource Voltage (V)<br>ISD, Reverse Drain Current (A) ID,  Drain-to-Source Current (A)<br>VGS, Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


**Fig. 7** Typical Source-to-Drain Diode Forward Voltage 

**Fig 8.** Maximum Safe Operating Area 

2015-9-30 

4 

AUIRF3805/S/L ~~ll~~ 

## ~~Cinfineon~~ 

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240<br>LIMITED BY PACKAGE<br>200<br>fae<br>160 PL<br>120<br>80<br>SEESoOINE<br>40<br>CEEFER<br>0 Pt} tT} tf<br>25 50 75 100 125 150 175<br> TC , Case Temperature (°C)<br>ID , Drain Current (A)<br>**----- End of picture text -----**<br>


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2.0<br>ID = 75A<br>V GS  = 10V<br>1.5 Pec<br>Va<br>1.0<br>TLEa<br>ATLL<br>0.5 C<br>-60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>TJ , Junction Temperature (°C)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>**----- End of picture text -----**<br>


**Fig 9.** Maximum Drain Current vs. Case Temperature 

**Fig 10.** Normalized On-Resistance vs. Temperature 

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1<br>Ol<br>D = 0.50<br>0.1 0.20 ST<br>0.10<br>0.05<br>0.01 —PI 0.020.01 ieeeTo —-er J J 1  1 R1 R 1 2  R22 R2 C C a Ri ( TIL 0.2653  ° C/W)  0.001016 i (sec) Ih<br>Ci=  Ci=  i  Ri iRi 0.2347  0.012816<br>0.001 ia) alllrail |||———<br>SINGLE PULSE Notes:<br>=z ( THERMAL RESPONSE ) 1. Duty Factor D = t1/t2<br>2. Peak Tj = P dm x Zthjc + Tc<br>0.0001<br>Te cull HE<br>1E-006 1E-005 0.0001 0.001 0.01 0.1<br>t1 , Rectangular Pulse Duration (sec)<br>Thermal Response ( Z thJC )<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

2015-9-30 

5 

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AUIRF3805/S/L<br>Ge<br>15V<br>2000<br>VDS L DRIVER                  I D<br>TOP          15A<br>1600                 20A<br>R G D.U.T + BOTTOM   75A<br>- [V][DD]<br>IAS A<br>7 20V ae 1200 Nana \<br>A t t p 0.01 a<br>Fig 12a.   Unclamped Inductive Test Circuit  800<br>: \NESES<br>V(BR)DSS 400<br>7 =Nee<br>tp<br>0 iS<br>25 50 75 100 125 150 175<br>Starting TJ, Junction Temperature (°C)<br>IAS Fig 12c.  Maximum Avalanche Energy<br> vs. Drain Current<br>Fig 12b.   Unclamped Inductive Waveforms<br>Id<br>Vds<br>Vgs<br>4.5<br>Vgs(th) 4.0<br>ID = 250µA<br>3.5<br>A TOT<br>| PN<br>Qgs1 Qgs2 Qgd Qgodr<br>3.0<br>PCP<br>Fig 13a.    Gate Charge Waveform  2.52.0 PCCPPCED<br>_<br>1.5<br>-75 -50 -25 0 25 50 75 100 125 150 175<br>TJ , Temperature ( °C )<br>| — ps<br>_ Fig 14. Threshold Voltage vs. Temperature<br>== PUTTIN<br>VGS(th) Gate threshold Voltage (V)<br>EAS, Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 13b.** Gate Charge Test Circuit 

6 

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~~Cinfineon~~ 

AUIRF3805/S/L ~~ll~~ 

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10000<br>Duty Cycle = Single Pulse<br>1000 Allowed avalanche Current vs<br>avalanche  pulsewidth,  tav<br>assuming Tj = 25°C due to<br>avalanche losses. Note: In no<br>100 cE 0.01 case should Tj be allowed to  i<br>0.05 mul exceed Tjmax<br>0.10<br>10 oR<br>Sot see Sl an am<br>1 UTI ieee<br>1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01<br>tav (sec)<br>Avalanche Current (A)<br>**----- End of picture text -----**<br>


**Fig 15.** Typical Avalanche Current vs. Pulse width 

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800 Notes on Repetitive Avalanche Curves , Figures 15, 16:<br>TOP          Single Pulse                 (For further info, see AN-1005 at www.infineon.com)<br>BOTTOM   1% Duty Cycle<br>ID = 75A 1. Avalanche failures assumption:<br>600<br>excess of Tjmax. This is validated for every part type. jmax. This is validated for every part type. . This is validated for every part type.<br>UT 2. Safe operation in Avalanche is allowed as long as Tjmaxjmax is not exceeded.<br>400 SWEET 4.  PD (ave) = Average power dissipation per single avalanche pulse. D (ave) = Average power dissipation per single avalanche pulse. = Average power dissipation per single avalanche pulse.<br>during avalanche).<br>6.  Iav = Allowable avalanche current.<br>200 PUDDASNUUE 7.  T = Allowable rise in junction temperature, not to exceedT = Allowable rise in junction temperature, not to exceed = Allowable rise in junction temperature, not to exceedAllowable rise in junction temperature, not to exceed<br>25°C in Figure 15, 16).<br>NG<br>tav = Average time in avalanche.<br>ASS D = Duty cycle in avalanche =  tav ·f<br>0 ZthJC(D, tav) = Transient thermal resistance, see Figures 13) thJC(D, tav) = Transient thermal resistance, see Figures 13) (D, tav) = Transient thermal resistance, see Figures 13) av) = Transient thermal resistance, see Figures 13) ) = Transient thermal resistance, see Figures 13)<br>25 50 75 100 125 150 175<br>Starting TJ , Junction Temperature (°C) PD (ave) = 1/2 ( 1.3·BV·Iav) = D (ave) = 1/2 ( 1.3·BV·Iav) =  = 1/2 ( 1.3·BV·Iav) = av) = ) =   T/ ZthJC<br>EAR , Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. jmax. This is validated for every part type. . This is validated for every part type. 

2. Safe operation in Avalanche is allowed as long as Tjmaxjmax is not exceeded. 

3.  Equation below based on circuit and waveforms shown in Figures 12a, 12b. 

4.  PD (ave) = Average power dissipation per single avalanche pulse. D (ave) = Average power dissipation per single avalanche pulse. = Average power dissipation per single avalanche pulse. 

5.  BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 

7. T = Allowable rise in junction temperature, not to exceedT = Allowable rise in junction temperature, not to exceed = Allowable rise in junction temperature, not to exceedAllowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 15, 16). 

   - ZthJC(D, tav) = Transient thermal resistance, see Figures 13) thJC(D, tav) = Transient thermal resistance, see Figures 13) (D, tav) = Transient thermal resistance, see Figures 13) av) = Transient thermal resistance, see Figures 13) ) = Transient thermal resistance, see Figures 13) 

**PD (ave) = 1/2 ( 1.3·BV·Iav) = D (ave) = 1/2 ( 1.3·BV·Iav) =  = 1/2 ( 1.3·BV·Iav) = av) = ) =**  **T/ ZthJC Iav = 2**  **T/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav** 

**Fig 16.** Maximum Avalanche Energy vs. Temperature 

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## ~~—__———————~~ 

**Fig 17.** Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs 

**Fig 18a.** Switching Time Test Circuit 

**Fig 18b.** Switching Time Waveforms 

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AUIRF3805/S/L ~~ll~~ 

## ~~Cinfin eon~~ 

**TO-220AB Package Outline** (Dimensions are shown in millimeters (inches)) 

## **TO-220AB Part Marking Information** 

**==> picture [331 x 148] intentionally omitted <==**

**----- Start of picture text -----**<br>
Part Number  AUF3805<br>Date Code<br>IR Logo  T éaR YWWA  Y= Year<br>WW= Work Week<br><br>XX         XX<br>a<br>Lot Code<br>**----- End of picture text -----**<br>


TO-220AB  package is not recommended for Surface Mount Application. 

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AUIRF3805/S/L ~~ll~~ 

## ~~Cinfin eon~~ 

**D[2] Pak (TO-263AB) Package Outline** (Dimensions are shown in millimeters (inches)) 

## **D[2] Pak (TO-263AB) Part Marking Information** 

**==> picture [330 x 148] intentionally omitted <==**

**----- Start of picture text -----**<br>
Part Number  AUF3805S<br>Date Code<br>IR Logo  T ézR YWWA  Y= Year<br>WW= Work Week<br><br>XX         XX<br>[|Sd<br>Lot Code<br>**----- End of picture text -----**<br>


10 

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AUIRF3805/S/L ~~ll~~ 

## ~~Cinfineon~~ 

**TO-262 Package Outline** (Dimensions are shown in millimeters (inches) 

## **TO-262 Part Marking Information** 

**==> picture [331 x 147] intentionally omitted <==**

**----- Start of picture text -----**<br>
Part Number  AUF3805L<br>Date Code<br>IR Logo  T éaR YWWA  Y= Year<br>WW= Work Week<br><br>XX         XX<br>|<br>Lot Code<br>**----- End of picture text -----**<br>


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~~Cinfineon~~ 

AUIRF3805/S/L ~~ll~~ 

## **D[2] Pak (TO-263AB) Tape & Reel Information** (Dimensions are shown in millimeters (inches)) 

**==> picture [385 x 163] intentionally omitted <==**

**----- Start of picture text -----**<br>
TRR<br>1.60 (.063)<br>1.50 (.059)<br>1.60 (.063)<br>4.10 (.161)<br>3.90 (.153) 1.50 (.059) 0.368 (.0145)<br>0.342 (.0135)<br>FEED DIRECTION 1.85 (.073) 11.60 (.457)<br>1.65 (.065) 11.40 (.449) 24.30 (.957)<br>15.42 (.609)<br>23.90 (.941)<br>15.22 (.601)<br>TRL<br>1.75 (.069)<br>10.90 (.429) 1.25 (.049)<br>10.70 (.421) 4.72 (.136)<br>16.10 (.634) 4.52 (.178)<br>15.90 (.626)<br>**----- End of picture text -----**<br>


**==> picture [70 x 7] intentionally omitted <==**

**----- Start of picture text -----**<br>
FEED DIRECTION<br>**----- End of picture text -----**<br>


**==> picture [377 x 189] intentionally omitted <==**

**----- Start of picture text -----**<br>
13.50 (.532) 27.40 (1.079)<br>12.80 (.504) 23.90 (.941)<br>4<br>330.00 60.00 (2.362)<br>(14.173)       MIN.<br>  MAX.<br>30.40 (1.197)<br>NOTES :       MAX.<br>1.   COMFORMS TO EIA-418.<br>26.40 (1.039) 4<br>2.   CONTROLLING DIMENSION: MILLIMETER. 24.40 (.961)<br>3.   DIMENSION MEASURED @ HUB. 3<br>**----- End of picture text -----**<br>


4.   INCLUDES FLANGE DISTORTION @ OUTER EDGE. 

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AUIRF3805/S/L ~~ateelc~~ **Qualification Information** 

|**Qualification Information**|**Qualification Information**|||
|---|---|---|---|
|**Qualification Level**||Automotive<br>(per AEC-Q101)||
|||Comments: This part number(s) passed Automotive qualification. Infineon’s<br>Industrial and Consumer qualification level is granted by extension of the higher<br>Automotive level.||
|**Moisture Sensitivity Level**||TO-220AB|N/A|
|||TO-262|MSL1, 260°C|
|||D2-Pak||
|**ESD**|Machine Model|Class M4 (+/-425V)† <br>AEC-Q101-002||
||Human Body Model|Class H3A (+/-4000V)†<br>AEC-Q101-001||
||Charged Device Model|Class C5 (+/-1000V)† <br>AEC-Q101-005||
|**RoHS Compliant**||Yes||



†  Highest passing voltage. 

## **Revision History** 

|**Date**|||**Comments**|
|---|---|---|---|
|9/30/2015||Updated datasheet with corporate template||
|||Corrected orderingtable onpage 1.||



**Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2015 All Rights Reserved.** 

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In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office (www.infineon.com). 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not ~~_~~ be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 

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