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AUIRF3710ZS
Power MOSFET, N Channel, 100 V, 59 A, 0.018 ohm, TO-263 (D2PAK), Surface Mount
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- Manufacturer: INFINEON
- Product type: Single MOSFETs
- Transistor Polarity:N Channel; Continuous Drain Current Id:59A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.014ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power
- No. of Pins: 3Pins
- Channel Type: N Channel
- Product Range: -
- Qualification: AEC-Q101
- Power Dissipation: 160W
- Transistor Mounting: Surface Mount
- Rds(on) Test Voltage: 10V
- Transistor Case Style: TO-263 (D2PAK)
- Drain Source Voltage Vds: 100V
- Operating Temperature Max: 175°C
- Continuous Drain Current Id: 59A
- Drain Source On State Resistance: 0.018ohm
- Gate Source Threshold Voltage Max: 2V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 0.94 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
PD - 97470
## **AUTOMOTIVE GRADE**
## AUIRF3710Z AUIRF3710ZS
## **Features**
Low On-Resistance 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified *
## **Description**
Specifically designed for Automotive applications, this HEXFET[®] Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
## HEXFET[®] Power MOSFET
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D VDSS = 100V<br>R = 18mΩ<br>DS(on)<br>G<br>ID = 59A<br>S<br>TO-220AB D [2] Pak<br>AUIRF3710Z AUIRF3710ZS<br>**----- End of picture text -----**<br>
## **Absolute Maximum Ratings**
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
||**Parameter**|**Max.**|**Units**|
|---|---|---|---|
|ID@ TC= 25°C|Continuous Drain Current, VGS@ 10V<br>~~CO~~<br>~~ee~~|59<br>~~CO~~<br>~~ee~~|A<br>~~ee~~|
|ID@ TC= 100°C|Continuous Drain Current, VGS@ 10V<br>~~ee~~|42<br>~~ee~~||
|IDM|Pulsed Drain Current<br>~~ee~~<br>~~0~~|240<br>~~ee~~<br>~~0~~||
|PD@TC= 25°C|Maximum Power Dissipation<br>~~Se~~|160<br>~~Se~~|W<br>~~Se~~|
||Linear Derating Factor<br>~~Se~~<br>~~LG~~|1.1<br>~~Se~~<br>~~LG~~|W/°C<br>~~Se~~<br>~~LG~~|
|VGS|Gate-to-Source Voltage<br>~~LG~~|± 20<br>~~LG~~|V<br>~~LG~~|
|EAS|Single Pulse Avalanche Energy (Thermallylimited)|170|mJ<br>~~So~~|
|EAS(tested)|Single Pulse Avalanche EnergyTested Value|200||
|IAR|Avalanche Current<br>~~[oo~~|See Fig.12a,12b,15,16<br>~~po~~|A|
|EAR<br>~~po~~|Repetitive Avalanche Energy<br>~~po~~||mJ<br>~~po~~|
|TJ<br>TSTG<br>~~po~~|Operating Junction and<br>Storage Temperature Range<br>~~po~~|-55 to + 175<br>~~po~~|°C<br>~~po~~|
|~~po~~|Soldering Temperature, for 10 seconds<br>~~po~~|300 (1.6mm from case )<br>~~po~~||
|~~po~~|Mounting torque, 6-32 or M3 screw<br>~~po~~<br>~~LG~~|10 lbf•in (1.1N•m)<br>~~po~~<br>~~LG~~|~~po~~<br>~~LG~~|
HEXFET[®] is a registered trademark of International Rectifier.
***** Qualification standards can be found at http://www.irf.com/
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## **Static Electrical Characteristics @ TJ = 25°C (unless otherwise stated)**
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|||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
|Parameter|Min.|Typ.|Max.|Units|Conditions|
|V(BR)DSS|Drain-to-Source Breakdown Voltage|100|–––|–––|V|VGS = 0V, ID = 250μA|
|ΔΒVDSS/ΔTJ|Rs|Breakdown Voltage Temp. Coefficient|–––|QO|0.10|GQ|–––|V/°C|Reference to 25°C, ID = 1mA|
|RDS(on)|DD|Static Drain-to-Source On-Resistance|–––|GO|14|(GO|18|mΩ|GO|VGS = 10V, ID = 35A|©|
|VGS(th)|Rs|Gate Threshold Voltage|2.0|QO|–––|GQ|4.0|V|VDS = VGS, ID = 250μA|
|gfs|Gs|Forward Transconductance|35|–––|GD|–––|QO|S|QO|VDS = 50V, ID = 35A|
|IDSS|Drain-to-Source Leakage Current|–––|–––|20|μA|VDS = 100V, VGS = 0V|
|–––|–––|250|VDS = 100V, VGS = 0V, TJ = 125°C|
|IGSS|Gate-to-Source Forward Leakage|–––|–––|200|nA|VGS = 20V|
|a|Gate-to-Source Reverse Leakage|a|–––|–––|-200|VGS = -20V|
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## **Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise stated)**
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|||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
|Qg|Total Gate Charge|–––|82|120|nC|ID = 35A|
|Qgs|Gate-to-Source Charge|–––|19|28|VDS = 80V|
|Qgd|Gate-to-Drain ("Miller") Charge|–––|27|40|VGS = 10V|2|
|td(on)|Turn-On Delay Time|–––|17|–––|ns|VDD = 50V|
|tr|Rise Time|–––|77|–––|ID = 35A|
|td(off)|Turn-Off Delay Time|–––|41|–––|RG = 6.8Ω|
|tf|Fall Time|–––|56|–––|VGS = 10V|2|
|LD|Internal Drain Inductance|–––|4.5|–––|nH|Between lead,|D|
|6mm (0.25in.)|
|G|
|LS|Internal Source Inductance|–––|7.5|–––|from package|
|+4]|and center of die contact|&|S|
|Ciss|Poen|Input Capacitance|–––|2900|–––|pF|VGS = 0V|:|
|Coss|Output Capacitance|–––|290|–––|VDS = 25V|
|Crss|Reverse Transfer Capacitance|–––|150|–––|ƒ = 1.0MHz, See Fig. 5|
|Coss|Output Capacitance|–––|1130|–––|VGS = 0V, VDS = 1.0V,|ƒ = 1.0MHz|
|Coss|Output Capacitance|–––|170|–––|VGS = 0V, VDS = 80V,|ƒ = 1.0MHz|
|Coss eff.|ee|Effective Output Capacitance|–––|280|–––|VGS = 0V, VDS = 0V to 80V|
|Diode Characteristics|
|Parameter|Min.|Typ.|Max.|Units|Conditions|
|IS|Continuous Source Current|–––|–––|59|MOSFET symbol|D|
|(Body Diode)|A|showing the|
|ISM|Pulsed Source Current|–––|–––|240|integral reverse|G|
|tlow|(Body Diode)|p-n junction diode.|S|
|VSD|RD|Diode Forward Voltage|–––|–––|GO|1.3|V|GOO|TJ = 25°C, IS = 35A, VGS = 0V|
|trr|Reverse Recovery Time|–––|50|75|ns|TJ = 25°C, IF = 35A, VDD = 25V|
|Qrr|+++|Reverse Recovery Charge|–––|100|160|};+|nC|di/dt = 100A/μ|.|s|||
|ton|ee|Forward Turn-On Time|Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)|
|ee|
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Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11). @ Limited by TJmax, starting TJ = 25°C, L = 0.27mH, RG = 25Ω, IAS = 35A, VGS =10V. Part not recommended for use above this value.
® ISD ≤ 35A, di/dt ≤ 380A/μs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS . This value determined from sample failure population, starting TJ = 25°C, L = 0.27mH,RG = 25Ω, IAS = 35A, VGS =10V This is applied to D[2] Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994.
Rθ is measured at TJ approximately 90°C.
This is only applied to TO-220AB pakcage.
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## **† Qualification Information**
|**Qualification Information**<br>**†**|**Qualification Information**<br>**†**|||
|---|---|---|---|
|**Qualification Level**||Automotive<br>(per AEC-Q101)††||
|||Comments:<br>This<br>part<br>number(s)<br>passed<br>Automotive<br>qualification. IR’s Industrial and Consumer qualification level is<br>granted by extension of the higher Automotive level.||
|**Moisture Sensitivity Level**||TO-220AB|N/A|
|||D2PAK|MSL1|
|**ESD**|Machine Model|Class M4<br>AEC-Q101-002||
||Human Body Model|Class H1C<br>AEC-Q101-001||
||Charged Device Model|Class C3<br>AEC-Q101-005||
|**RoHS Compliant**||Yes||
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1000 1000<br>VGS VGS<br>TOP 15V TOP 15V<br>10V 10V<br>100 8.0V 8.0V<br>7.0V 7.0V<br>6.0V 6.0V<br>5.5V Smeiiii aa 100 5.5V oll<br>10 5.0V 5.0V<br>BOTTOM 4.5V BOTTOM 4.5V<br>1<br>4.5V 10 4.5V<br>r et Pe tH<br>0.1<br>20μs PULSE WIDTH 20μs PULSE WIDTH<br>Tj = 25°C Tj = 175°C<br>0.01 FE Et CE 1 ania lll<br>0.1 1 10 100 0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)<br>Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics<br>1000 120<br>es ee ee es 100 T = 25°C<br>J<br>100 TJ = 175°C<br>S s 80 P t tf<br>T = 175°C<br>J<br>10 e e 2 60 |<br>— — 40 | y,ii LL<br>1 TJ = 25°C<br>20<br>VDS = 25V VDS = 15V<br>20μs PULSE WIDTH 20μs PULSE WIDTH<br>0 es<br>0<br>2 4 6 8 10<br>0 10 20 30 40 50 60 70<br>VGS, Gate-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A)<br>GFS, Forward Transconductance (S)<br>)(Α<br>ID, Drain-to-Source Current<br>**----- End of picture text -----**<br>
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120<br>100 T = 25°C<br>J<br>80 P t tf<br>T = 175°C<br>J<br>60 |<br>40 | y,ii LL<br>20<br>VDS = 15V<br>20μs PULSE WIDTH<br>0<br>0 10 20 30 40 50 60 70<br>ID, Drain-to-Source Current (A)<br>GFS, Forward Transconductance (S)<br>**----- End of picture text -----**<br>
**Fig 3.** Typical Transfer Characteristics
**Fig 4.** Typical Forward Transconductance vs. Drain Current
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100000 12.0<br>VCCGS rss iss = C = 0V, f = 1 MHZ = Cgd gs + Cgd, Cds SHORTED 10.0 ID= 35A VDS= 80V<br>10000 Coss = Cds + Cgd VDS= 50V<br>VDS= 20V<br>8.0<br>R o Ciss ee<br>1000 6.0<br>Coss<br>Crss 4.0<br>100<br>2.0<br>10 PT<br>0.0<br>1 10 100<br>0 20 40 60 80 100<br>VDS, Drain-to-Source Voltage (V)<br> QG Total Gate Charge (nC)<br>Fig 5. Typical Capacitance vs. Fig 6. Typical Gate Charge vs.<br>Drain-to-Source Voltage Gate-to-Source Voltage<br>1000.00 1000<br>OPERATION IN THIS AREA<br>LIMITED BY RDS(on)<br>a oe Peretti typ ated ne y -ETHTtH<br>100.00 100<br>TJ = 175°C<br>a R at ae cd<br>100μsec<br>10.00 10<br>TJ = 25°C<br>1msec<br>1.00 1<br>Tc = 25°C<br>Tj = 175°C 10msec<br>VGS = 0V Single Pulse<br>0.10 | 0.1 Wi iis 2M<br>0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1 10 100 1000<br>VSD, Source-to-Drain Voltage (V) VDS , Drain-toSource Voltage (V)<br>ID, Drain-to-Source Current (A)<br>C, Capacitance(pF)<br>VGS, Gate-to-Source Voltage (V)<br>ISD, Reverse Drain Current (A)<br>**----- End of picture text -----**<br>
**Fig 7.** Typical Source-Drain Diode Forward Voltage
**Fig 8.** Maximum Safe Operating Area
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60 3.0<br>ID = 59A<br>50 S ~~ T 2.5 VGS = 10V T EEEHAT<br>40 S aNGGm 2.0 SNEEEBY<br>F EE [ELLE] 2<br>30 | 1.5 P EE<br>20 | 1.0 PLEEAEEEEL<br>100 ry | | LIN \ 0.50.0 P eeTTTLEEELE L ELLLL E<br>25 50 75 100 125 150 175 -60 -40 -20 0 20 40 60 80 100 120 140 160 180<br> TC , Case Temperature (°C) TJ , Junction Temperature (°C)<br>Fig 9. Maximum Drain Current vs. Fig 10. Normalized On-Resistance<br>Case Temperature vs. Temperature<br>10<br>1 S R 0 |<br>D = 0.50<br>| | 0.20 a ee ee, ee — ot |<br>0.1 0.10<br>0.05<br>m egs eee ell<br>0.02<br>0.01<br>0.01 Se ee eaati eat eeeatilee meat<br>d SINGLE PULSE d<br>ee ( THERMAL RESPONSE )<br>Acc ent<br>0.001 a n ee a | REP ER<br>1E-006 1E-005 0.0001 0.001 0.01 0.1 1<br>t1 , Rectangular Pulse Duration (sec)<br>RDS(on) , Drain-to-Source On Resistance (Normalized)<br>ID, Drain Current (A)<br>Thermal Response ( Z thJC )<br>**----- End of picture text -----**<br>
**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case
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15V<br>VDS L DRIVER<br>RG D.U.T +<br>- [V][DD]<br>IAS<br>20VVGS<br>ai tp 0.01Ω<br>.<br>**----- End of picture text -----**<br>
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Fig 12a. Unclamped Inductive Test Circuit<br>V(BR)DSS<br>os tp<br>/ |<br>IAS a ni<br>**----- End of picture text -----**<br>
**Fig 12b.** Unclamped Inductive Waveforms
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QG<br>10 V [2]<br>a QGS \* QGD ><br>VG<br>Charge<br>Fig 13a. Basic Gate Charge Waveform<br>Current Regulator<br>Same Type as D.U.T.<br>50KΩ<br>12V .2μF<br>.3μF<br>ce) D.U.T. +-VDS<br>VGS<br>ie<br>3mA<br>a |<br>IG ID<br>Current Sampling Resistors<br>**----- End of picture text -----**<br>
**Fig 13b.** Gate Charge Test Circuit
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300<br>ID<br>TOP 15A<br>250<br>25A<br>BOTTOM 35A<br>200 N E<br>I NELLL<br>150<br>N SONEEEEEEEE<br>100<br>S ST<br>50<br>A SST<br>0 L ETS<br>25 50 75 100 125 150 175<br>Starting TJ , Junction Temperature (°C)<br>EAS , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>
**Fig 12c.** Maximum Avalanche Energy vs. Drain Current
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5.0 PPP EEE [EEE]<br>4.0 S ORE eeeeee<br>C RN EEL<br>3.0 ID = 250μA<br>2.0<br>H L PSE<br>1.0 PELE<br>-75 -50 -25 0 25 50 75 100 125 150 175 200<br>HHS TJ , Temperature ( °C )<br>VGS(th) Gate threshold Voltage (V)<br>**----- End of picture text -----**<br>
**Fig 14.** Threshold Voltage vs. Temperature
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1000<br>Duty Cycle = Single Pulse<br>PE ST<br>100 A s | as ETE |TE I Allowed avalanche Current vs IE T<br>avalanche pulsewidth, tav<br>0.01<br>assuming Δ Tj = 25°C due to<br>St ea a cil avalanche losses<br>10 0.05<br>eSe ll<br>0.10<br>PC os SSTT<br>1<br>AE H<br>TTI CPT See Ul<br>0.1 a en a lll<br>1.0E-08 1.0E-07 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01<br>tav (sec)<br>Fig 15. Typical Avalanche Current vs.Pulsewidth<br>200 Notes on Repetitive Avalanche Curves , Figures 15, 16:<br>TOP Single Pulse (For further info, see AN-1005 at www.irf.com)<br>BOTTOM 10% Duty Cycle 1. Avalanche failures assumption:<br>ID = 35A Purely a thermal phenomenon and failure occurs at a<br>150 C EL temperature far in excess of Tjmax. This is validated for<br> every part type.<br>2. Safe operation in Avalanche is allowed as long asTjmax is<br>N EA not exceeded.<br>100 3. Equation below based on circuit and waveforms shown in<br>P ING<br> Figures 12a, 12b.<br>4. PD (ave) = Average power dissipation per single<br>H ENGE avalanche pulse.<br>5. BV = Rated breakdown voltage (1.3 factor accounts for<br>50 P ELE NEE<br> voltage increase during avalanche).<br>6. Iav = Allowable avalanche current.<br>c ope 7. ΔT = Allowable rise in junction temperature, not to exceed<br> Tjmax (assumed as 25°C in Figure 15, 16).<br>0 PL EEL EE EAR tav = Average time in avalanche.<br>25 50 75 100 125 150 175 D = Duty cycle in avalanche = tav ·f<br>Starting TJ , Junction Temperature (°C) ZthJC(D, tav) = Transient thermal resistance, see figure 11)<br>EAR , Avalanche Energy (mJ)<br>Avalanche Current (A)<br>**----- End of picture text -----**<br>
**Fig 16.** Maximum Avalanche Energy vs. Temperature
- **PD (ave) = 1/2 ( 1.3·BV·Iav) =** A **T/ ZthJC Iav = 2** A **T/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav**
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Driver Gate Drive<br>P.W.<br>D.U.T + Period — D = ——<br>+ P.W. Period<br>) [©)] • Circuit Layout Considerations V |t GS=10V<br> •<br>| =] - LowGround StrayPla I n eductance<br> • Low Leakage Inductance @) D.U.T. ISD Waveform<br>+<br>Reverse<br>Recovery Body Diode Forward<br>oH - [l] Current Transformer - ® + Current r Current di/dt AN<br>® D.U.T. VDS Waveform Diode Recoverydv/dt ‘ '<br>00 _ VDD<br>iv<br>• Re-Applied<br>• Driver same type as D.U.T. + Voltage Body Diode Forward Drop<br>Re ( 4) • dv/dt controlled by Rg Vop - Inductor Curent<br>•<br>D.U.T. - Device Under Test es ee<br>Isp controlled by Duty Factor "D" @) Ripple ≤ 5% ISD<br>* Veg = 5V for Logic Level Devices<br>Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel<br>HEXFET ® Power MOSFETs<br>Vos Rp<br> >—j—<br>Vro D.U.T.<br>+<br>R L - Vop<br>)+ 10V<br>Pulse Width ≤ 1 ys<br>Duty Factor ≤ 0.1 %<br>Fig 18a. Switching Time Test Circuit<br>VDS<br>90%<br>|<br>|<br>|<br>10%<br>VGS | |<br>lee >! able<br>td(on) tr td(off) tf<br>**----- End of picture text -----**<br>
**Fig 18b.** Switching Time Waveforms
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## D[2] Pak Tape & Reel Infomation
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TRR<br>1.60 (.063)<br>1.50 (.059)<br>1.60 (.063)<br>4.10 (.161)3.90 (.153) 1.50 (.059) 0.368 (.0145)<br>0.342 (.0135)<br>FEED DIRECTION 1.85 (.073) 11.60 (.457)<br>1.65 (.065) 11.40 (.449) 15.42 (.609) 24.30 (.957)<br>15.22 (.601) 23.90 (.941)<br>TRL<br>— TUN 1.75 (.069)<br>10.90 (.429) 1.25 (.049)<br>10.70 (.421) 4.72 (.136)<br>16.10 (.634) 4.52 (.178)<br>15.90 (.626)<br>FEED DIRECTION<br>13.50 (.532) 27.40 (1.079)<br>® 12.80 (.504) 23.90 (.941) dp<br>4<br>330.00 60.00 (2.362)<br>(14.173) MIN.<br> MAX.<br>| F<br>30.40 (1.197)<br>NOTES : ———— JL MAX.<br>1. COMFORMS TO EIA-418.2. CONTROLLING DIMENSION: MILLIMETER. 26.40 (1.039)24.40 (.961) IL 4<br>: 3. DIMENSION MEASURED @ HUB. 3<br>o 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.<br>**----- End of picture text -----**<br>
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## **Ordering Information**
|**Base part number**|**Package Type**|**Standard Pack**|**Standard Pack**|**Complete Part Number**|
|---|---|---|---|---|
|||**Form**|**Quantity**||
|AUIRF3710Z|TO-220|Tube|**Quantity**<br>50|AUIRF3710ZS|
|AUIRF3710ZS|D2Pak|Tube|50|AUIRF3710ZS|
|AUIRF3710ZS||Tape and Reel Left|800|AUIRF3710ZSTRL|
|AUIRF3710ZS||Tape and Reel Right|800|AUIRF3710ZSTRR|
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IR products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or in other applications intended to support or sustain life, or in any other application in which the failure of the IR product could create a situation where personal injury or death may occur. Should Buyer purchase or use IR products for any such unintended or unauthorized application, Buyer shall indemnify and hold International Rectifier and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that IR was negligent regarding the design or manufacture of the product.
IR products are neither designed nor intended for use in military/aerospace applications or environments unless the IR products are specifically designated by IR as military-grade or “enhanced plastic.” Only products designated by IR as military-grade meet military specifications. Buyers acknowledge and agree that any such use of IR products which IR has not designated as military-grade is solely at the Buyer’s risk, and that they are solely responsible for compliance with all legal and regulatory requirements in connection with such use.
IR products are neither designed nor intended for use in automotive applications or environments unless the specific IR products are designated by IR as compliant with ISO/TS 16949 requirements and bear a part number including the designation “AU”. Buyers acknowledge and agree that, if they use any non-designated products in automotive applications, IR will not be responsible for any failure to meet such requirements.
For technical support, please contact IR’s Technical Assistance Center http://www.irf.com/technical-info/ **WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105
www.irf.com
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Updated at March 10, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
About Novapart
Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
Learn more →Stock Shortage Specialist
When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
Request a quote →Compliant Alternatives
We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
BOM Analysis service →