AUIRF3315S

**AUTOMOTIVE GRADE** 

## ~~Cinfin eon~~ 

## AUIRF3315S ~~—~~ 

|**AUTOMOTIVE GRADE**<br>~~Cinfineon~~||AUIRF3315S<br>~~—~~|AUIRF3315S<br>~~—~~|
|---|---|---|---|
|**Features**||HEXFET®Power MOSFET||
|Advanced Planar Technology<br>Low On-Resistance<br>Dynamic dV/dT Rating<br>175°C Operating Temperature<br>Fast Switching<br>Fully Avalanche Rated||**VDSS**<br>**150V**<br>**RDS(on)   max.**<br>**82m**<br>**ID**<br>**21A**<br>~~—+—~~||
|Repetitive Avalanche Allowed up to Tjmax||||
|Lead-Free, RoHS Compliant||D||
|Automotive Qualified *||||
|**Description**||S<br>G||
|Specifically designed for Automotive applications, this cellular design of||||
|HEXFET® Power MOSFETs utilizes the latest processing techniques to||D2Pak||
|achieve low on-resistance per silicon area. This benefit combined with the||AUIRF3315S||
|fast switching speed and ruggedized device design that HEXFET power<br>MOSFETs are well known for, provides the designer with an extremely<br>efficient and reliable device for use in Automotive and a wide variety of other<br>applications.<br>**G**<br>**D**<br>**S**<br>Gate<br>Drain<br>Source<br>~~Eo~~||||
|**Base part number**<br>**Package Type**<br>**Standard Pack**<br>**Orderable Part Number**<br>**Form**<br>**Quantity**<br>AUIRF3315S<br>D2-Pak<br>Tube<br>50<br>AUIRF3315S<br>Tape andReel Left<br>800<br>AUIRF3315STRL<br>~~———~~||||
|**Absolute Maximum Ratings**||||
|Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress||||
|ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not||||
|implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance||||
|and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless||||
|otherwise specified.||||
|**Symbol**<br>**Parameter**<br>**Max.**<br>**Units**<br>ID@ TC= 25°C<br>Continuous Drain Current, VGS@ 10V<br>21<br>A<br>ID @TC= 100°C<br>Continuous Drain Current,VGS @10V<br>15<br>IDM<br>Pulsed Drain Current<br>84<br>~~————~~||||
|PD@TA= 25°C<br>Maximum Power Dissipation<br>3.8<br>PD@TC= 25°C<br>Maximum Power Dissipation<br>94<br>Linear Derating Factor<br>0.63<br>W/°C<br>VGS<br>Gate-to-SourceVoltage<br>± 20<br>V<br>W<br>~~————~~||||
|EAS<br>Single Pulse Avalanche Energy (ThermallyLimited) ||350<br>mJ||
|IAR<br>Avalanche Current||12<br>A||
|EAR<br>Repetitive Avalanche Energy ||9.4<br>mJ||
|dv/dt<br>Peak Diode Recovery ||2.5<br>V/ns||
|TJ<br>Operating Junction and||-55  to + 175||
|TSTG<br>Storage Temperature Range||°C||
|SolderingTemperature,for 10 seconds(1.6mm from case)<br>300||||
|**Thermal Resistance**<br>**Symbol**<br>**Parameter**<br>**Typ.**<br>**Max.**<br>**Units**<br>RJC<br>Junction-to-Case<br>–––<br>1.6<br>°C/W<br>RJA<br>Junction-to-Ambient(PCB Mount,steadystate) <br>40<br>~~—ee~~<br>~~ee~~||||
|HEXFET® is a registered trademark of Infineon.||||
|*****Qualification standards can be found atwww.infineon.com||||



1 

2015-11-13 

~~Cinfin eon~~ 

AUIRF3315S ~~_l__LLL~~ 

**Static @ TJ = 25°C (unless otherwise specified)** 

|Qg<br>~~es~~|TotalGate Charge|–––|–––|95|nC|ID= 12A<br>VDS= 120V<br>VGS= 10V|
|---|---|---|---|---|---|---|
|g<br>Qgs<br>~~es~~<br>~~es~~<br>~~es~~|Gate-to-Source Charge<br>~~I~~|–––<br>~~I~~<br>~~I~~|–––<br>~~I~~|11<br>~~I~~|||
|gs<br>Qgd<br>~~es~~<br>~~es~~|Gate-to-DrainCharge<br>~~I~~|–––<br>~~I~~<br>~~I~~|–––<br>~~I~~|47<br>~~I~~|||
|gd<br>td(on)<br>~~es~~<br>~~es~~|Turn-On DelayTime<br>~~I~~|–––<br>~~I~~<br>~~I~~|9.6<br>~~I~~|–––<br>~~I~~|ns<br>~~ttf~~|VDD= 75V<br>ID= 12A<br>RG= 5.1<br>RD=5.9<br>~~gh~~|
|d(on)<br>tr<br>~~es~~|Rise Time|–––<br>~~I~~|32|–––|||
|td(off)<br>~~a~~<br>~~ee~~|Turn-Off DelayTime<br>~~I~~|–––<br>~~I~~<br>~~I~~|49<br>~~I~~|–––<br>~~I~~|||
|d(off)<br>tf<br>~~a~~<br>~~ee~~<br>~~ttf~~|Fall Time<br>~~I~~<br>~~ttf~~|–––<br>~~I~~<br>~~I~~<br>~~ttf~~|38<br>~~I~~<br>~~ttf~~|–––<br>~~I~~<br>~~ttf~~|||
|LD<br>~~ee~~<br>~~ttf~~|Internal Drain Inductance<br>~~I~~<br>~~ttf~~|–––<br>~~I~~<br>~~I~~<br>~~ttf~~|4.5<br>~~I~~<br>~~ttf~~|–––<br>~~I~~<br>~~ttf~~|nH<br>~~ttf~~<br>~~Pf~~|Between lead,<br>6mm (0.25in.)<br>from package<br>and center of die contact<br>~~gh~~<br>~~Pf~~|
|LS<br>~~ttf~~<br>~~**e**s~~|Internal Source Inductance<br>~~ttf~~|–––<br>~~ttf~~|7.5<br>~~ttf~~|–––<br>~~ttf~~|||
|Ciss<br>~~ttf~~<br>~~**e**s~~|Input Capacitance<br>~~ttf~~|––– 1<br>~~ttf~~|––– 1300–––<br>~~ttf~~|–––<br>~~ttf~~|pF<br>~~ttf~~<br>~~Pf~~|VGS= 0V<br>VDS= 25V<br>ƒ= 1.0MHz, See Fig.5<br>~~gh~~<br>~~Pf~~|
|Coss<br>~~**e**s~~<br>~~e~~|Output Capacitance|–––|300|–––|||
|Crss<br>~~**e**s~~<br>~~e~~|Reverse Transfer Capacitance|–––|160|–––|||
|**Diode Characteristics**<br>~~e~~|||||||
|~~a~~<br>~~+},~~|**Parameter**<br>~~a~~<br>~~+},~~|**Min. Typ. Max. Units**<br>~~+},~~|**Min. Typ. Max. Units**<br>~~OG~~<br>~~+},~~|**Min. Typ. Max. Units**<br>~~OG~~<br>~~+},~~|**Min. Typ. Max. Units**<br>~~],~~|**Min. Typ. Max. Units**<br>**Conditions**<br>~~],&~~|
|IS<br>~~+},~~|Continuous Source Current<br>(BodyDiode)<br>~~+},~~|–––<br>~~+},~~|–––<br>~~+},~~|21<br>~~+},~~|A<br>~~],~~<br>~~ss~~|MOSFET symbol<br>showing  the<br>integral reverse<br>p-njunctiondiode.<br>~~],&~~<br>~~ss~~|
|ISM<br>~~+},~~<br>~~ee~~|Pulsed Source Current<br>(BodyDiode)<br>~~+},~~<br>~~ss~~|–––<br>~~+},~~<br>~~ss~~|–––<br>~~+},~~<br>~~ss~~|84<br>~~+},~~<br>~~ss~~|||
|VSD<br>~~+},~~<br>~~ee~~|Diode Forward Voltage<br>~~+},~~<br>~~ss~~|–––<br>~~+},~~<br>~~ss~~|–––<br>~~+},~~<br>~~ss~~|1.3<br>~~+}, ~~<br>~~ss~~|V<br> ~~],~~<br>~~ss~~|TJ= 25°C,IS= 12A,VGS= 0V<br>~~], &~~<br>~~ss~~|
|trr<br>~~ee~~<br>~~ee~~|ReverseRecoveryTime<br>~~ss~~<br>~~ee~~|–––<br>~~ss~~<br>~~ee~~|174<br>~~ss~~<br>~~ee~~|260<br>~~ss~~<br>~~ee~~|nsT<br>~~ss~~<br>~~ee~~|TJ= 25°C ,IF= 12A<br>C   di/dt = 100A/µs<br>~~ss~~<br>~~ee~~<br>~~I~~|
|Qrr<br>~~ee~~<br>~~|~~|Reverse RecoveryCharge<br>~~ee~~<br>~~I~~|–––<br>~~ee~~<br>~~I~~|1.2<br>~~ee~~<br>~~I~~|1.7<br>~~ee~~<br>~~I~~|µC   di/dt = 100A/<br>~~ee~~<br>~~I~~||
|ton<br>~~|~~|Forward Turn-On Time<br>~~I~~|Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)<br>~~I~~|||||



## **Notes:** 

 Repetitive rating;  pulse width limited by max. junction temperature. (See fig.11) 

 Limited by TJmax, starting  TJ = 25°C, L = 4.9mH, RG = 25, IAS = 12A. (See fig.12) 

  ISD 12A, di/dt 140A/µs, VDD V(BR)DSS, TJ  175°C. 

 Pulse width 300µs; duty cycle  2%. 

-  When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994 

- R is measured at TJ of approximately 90°C 

2 

2015-11-13 

~~Cinfineon~~ 

AUIRF3315S 

**Fig. 1** Typical Output Characteristics 

**Fig. 3** Typical Transfer Characteristics 

**Fig. 2** Typical Output Characteristics 

**Fig. 4** Normalized On-Resistance vs. Temperature 

3 

2015-11-13 

~~Cinfineon~~ 

## AUIRF3315S 

**Fig 5.** Typical Capacitance vs. Drain-to-Source Voltage 

**Fig. 7** Typical Source-to-Drain Diode Forward Voltage 

**Fig 6.** Typical Gate Charge vs. Gate-to-Source Voltage 

**Fig 8.** Maximum Safe Operating Area 

2015-11-13 

4 

~~Cinfineon~~ 

## AUIRF3315S 

**Fig 10a.** Switching Time Test Circuit 

**Fig 9.** Maximum Drain Current vs. Case Temperature 

**Fig 10b.** Switching Time Waveforms 

**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

2015-11-13 

5 

~~Cinfineon~~ 

AUIRF3315S 

**==> picture [223 x 133] intentionally omitted <==**

**----- Start of picture text -----**<br>
15V<br>L DRIVER<br>VDS<br>RG D.U.T +<br>- [V][DD]<br>oN IAS<br>. 20V SL<br>t 0.01<br>7 OE p LY<br>**----- End of picture text -----**<br>


**Fig 12a.** Unclamped Inductive Test Circuit 

**==> picture [193 x 113] intentionally omitted <==**

**----- Start of picture text -----**<br>
V(BR)DSS<br>< tp ><br>IAS<br>**----- End of picture text -----**<br>


**Fig 12c.** Maximum Avalanche Energy vs. Drain Current 

**Fig 12b.** Unclamped Inductive Waveforms 

**==> picture [211 x 144] intentionally omitted <==**

**----- Start of picture text -----**<br>
Id<br>Vds<br>: Vgs<br>|<br>Vgs L, (th)<br>a g p i n p i g ple !<br>Qgs1 Qgs2 Qgd Qgodr<br>**----- End of picture text -----**<br>


**Fig 13b.** Gate Charge Test Circuit 

**Fig 13a.** Gate Charge Waveform 

6 

2015-11-13 

~~Cinfineon~~ 

AUIRF3315S 

**Fig 14.** Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs 

2015-11-13 

7 

AUIRF3315S ~~_l__LLL~~ 

## ~~Cinfin eon~~ 

**D[2] Pak (TO-263AB) Package Outline** (Dimensions are shown in millimeters (inches)) 

## **D[2] Pak (TO-263AB) Part Marking Information** 

**==> picture [331 x 148] intentionally omitted <==**

**----- Start of picture text -----**<br>
Part Number  AUIRF3315S<br>Date Code<br>IR Logo  T é4R YWWA  Y= Year<br>WW= Work Week<br><br>XX         XX<br>[|<br>Lot Code<br>**----- End of picture text -----**<br>


Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 

8 

2015-11-13 

AUIRF3315S ~~_l__LLL~~ 

## ~~Cinfineon~~ 

## **D[2] Pak (TO-263AB) Tape & Reel Information** (Dimensions are shown in millimeters (inches)) 

**==> picture [386 x 164] intentionally omitted <==**

**----- Start of picture text -----**<br>
TRR<br>1.60 (.063)<br>1.50 (.059)<br>1.60 (.063)<br>4.10 (.161)<br>3.90 (.153) 1.50 (.059) 0.368 (.0145)<br>0.342 (.0135)<br>FEED DIRECTION 1.85 (.073) 11.60 (.457)<br>1.65 (.065) 11.40 (.449) 24.30 (.957)<br>15.42 (.609)<br>23.90 (.941)<br>15.22 (.601)<br>TRL<br>1.75 (.069)<br>10.90 (.429) 1.25 (.049)<br>10.70 (.421) 4.72 (.136)<br>16.10 (.634) 4.52 (.178)<br>15.90 (.626)<br>**----- End of picture text -----**<br>


**==> picture [71 x 7] intentionally omitted <==**

**----- Start of picture text -----**<br>
FEED DIRECTION<br>**----- End of picture text -----**<br>


**==> picture [376 x 188] intentionally omitted <==**

**----- Start of picture text -----**<br>
13.50 (.532) 27.40 (1.079)<br>12.80 (.504) 23.90 (.941)<br>4<br>330.00 60.00 (2.362)<br>(14.173)       MIN.<br>  MAX.<br>30.40 (1.197)<br>NOTES :       MAX.<br>1.   COMFORMS TO EIA-418.<br>26.40 (1.039) 4<br>2.   CONTROLLING DIMENSION: MILLIMETER. 24.40 (.961)<br>3.   DIMENSION MEASURED @ HUB. 3<br>**----- End of picture text -----**<br>


4.   INCLUDES FLANGE DISTORTION @ OUTER EDGE. 

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 

9 

2015-11-13 

AUIRF3315S ~~ee&»«=«€#=»™7§Ee&~~ **Qualification Information** 

|**Qualification Level**|**Qualification Level**|Automotive<br>(per AEC-Q101)|Automotive<br>(per AEC-Q101)|
|---|---|---|---|
|||Comments: This part number(s) passed Automotive qualification. Infineon’s<br>Industrial and Consumer qualification level is granted by extension of the higher<br>Automotive level.||
|**Moisture Sensitivity Level**||D2-Pak|MSL1|
|**ESD**|Machine Model|Class M4 (+/- 600V)† <br>AEC-Q101-002||
||Human Body Model|Class H1C (+/- 2000V)† <br>AEC-Q101-001||
||Charged Device Model|Class C5 (+/- 2000V)† <br>AEC-Q101-005||
|**RoHS Compliant**||Yes||



†  Highest passing voltage. 

|**Date**|**Comments**|
|---|---|
|11/13/2015|<br>Updated datasheet with corporate template<br><br>Corrected ordering table on page 1.<br><br>Corrected typo in test condition current from “43A” to “12A” for VSD and trr/Qrr onpage 2.|



**Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2015 All Rights Reserved.** 

## **IMPORTANT NOTICE** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office (www.infineon.com). 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 

10 

2015-11-13