AUIRF3205

Power MOSFET, N Channel, 55 V, 75 A, 8000 µohm, TO-220AB, Through Hole

⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.

Manufacturer: INFINEON
Product type: Single MOSFETs
Available until stocks are exhausted
MSL: -
SVHC: No SVHC (27-Jun-2018)
No. of Pins: 3Pins
Channel Type: N Channel
Product Range: HEXFET
Qualification: AEC-Q101
Power Dissipation: 200W
Transistor Mounting: Through Hole
Rds(on) Test Voltage: 10V
Transistor Case Style: TO-220AB
Drain Source Voltage Vds: 55V
Operating Temperature Max: 175°C
Continuous Drain Current Id: 75A
Drain Source On State Resistance: 8000µohm
Gate Source Threshold Voltage Max: 4V

Delivery and price
Units per pack	100
Price	1.37 €
Current stock	500+
Lead time	7 days

Datasheet

PD - 97741 

**AUTOMOTIVE GRADE** 

## AUIRF3205 

## **Features** 

HEXFET[®] Power MOSFET 

|G||S<br>D||**V(BR)DSS**<br>**RDS(on)   max.**<br>**ID (Silicon Limited)**<br>**ID (Package Limited)**|~~P~~<br>~~PF~~|**55V**<br>**8.0m**<br>**110A**<br>**75A**|
|---|---|---|---|---|---|---|



## **Description** 

Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications. 

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D<br>S<br>D<br>G<br>TO-220AB<br>AUIRF3205<br>G D S<br>Gate Drain Source<br>**----- End of picture text -----**<br>


## **Absolute Maximum Ratings** 

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.   These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified. 

||**Parameter**|**Max.**|**Units**|
|---|---|---|---|
|ID@ TC= 25°C|Continuous Drain Current, VGS@ 10V(Silicon Limited)<br>~~a~~|110<br>~~a~~|A<br>~~a~~<br>~~a~~|
|ID@ TC= 100°C|Continuous Drain Current, VGS@ 10V (Silicon Limited)<br>~~a~~|80<br>~~a~~||
|ID@ TC= 25°C|Continuous Drain Current, VGS@ 10V(Package Limited)|75||
|IDM|Pulsed Drain Current|390||
|PD@TC= 25°C|Power Dissipation|200|W|
||Linear Derating Factor|1.3|W/°C|
|VGS<br>~~a~~|Linear Derating Factor<br>Gate-to-Source Voltage<br>~~a~~<br>~~-~~<br>~~a~~|± 20<br>~~a~~|V<br>~~a~~|
|EAS<br>~~a~~|Single Pulse Avalanche Energy (ThermallyLimited)<br>~~a~~<br>~~-~~<br>~~a~~|264<br>~~a~~|mJ<br>~~a~~|
|IAR<br>~~a~~|Avalanche Current<br>~~-~~<br>~~a~~<br>~~a~~|62|A|
|EAR<br>~~a~~|Repetitive Avalanche Energy<br>~~-~~<br>~~a~~<br>~~<<~~|20<br>~~<<~~|mJ<br>~~<<~~|
|TJ<br>TSTG|Operating Junction and<br>Storage Temperature Range<br>~~<<~~<br>~~ee~~|-55  to + 175<br>~~<<~~<br>~~ee~~|°C<br>~~<<~~<br>~~ee~~|
||Soldering Temperature, for 10 seconds (1.6mm from case )<br>~~ee~~|300<br>~~ee~~||
||Soldering Temperature, for 10 seconds (1.6mm from case )<br>Mounting Torque, 6-32 or M3 screw<br>~~CO~~|10 lbf in (1.1N m)<br>~~CO~~|~~CO~~|



HEXFET[®] is a registered trademark of International Rectifier. ***** Qualification standards can be found at http://www.irf.com/ 

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## AUIRF3205 

## **Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

||**Parameter**|**Min.**|**Typ.**|**Max. **|**Units**|**Conditions**|
|---|---|---|---|---|---|---|
|Qg|Total Gate Charge<br>~~ee~~<br>~~a~~|–––<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~|146<br>~~ee~~|nC|ID= 62A<br>VDS= 44V<br>VGS= 10V, See Fig. 6 & 13<br>~~®~~|
|Qgs|Gate-to-Source Charge<br>~~es~~<br>~~a~~|–––<br>~~es~~<br>~~ee~~|–––<br>~~es~~<br>~~ee~~|35<br>~~es~~|||
|Qgd|Gate-to-Drain("Miller")Charge<br>~~a~~|–––<br>~~ee ~~<br>~~ee~~|–––<br> ~~ee~~|54|||
|td(on)|Turn-On DelayTime<br>~~es~~|–––<br>~~es~~<br>~~ee~~<br>~~ee~~|14<br>~~es~~|–––<br>~~es~~|ns<br>~~ee)~~|VDD= 28V<br>ID= 62A<br>RG= 4.5<br>VGS= 10V, See Fig. 10<br>~~ee)~~|
|tr|Rise Time<br>~~es~~<br>~~rs~~|–––<br>~~ee~~<br>~~es~~<br>~~ee~~<br>~~ee~~|101<br>~~es~~|–––<br>~~es~~|||
|td(off)|Turn-Off DelayTime<br>~~es~~<br>~~rs~~|–––<br>~~ee~~<br>~~es~~<br>~~ee~~|50<br>~~es~~|–––<br>~~es~~|||
|tf|Fall Time<br>~~rs~~|–––<br>~~ee~~|65|–––|||
|LD|Internal Drain Inductance<br>~~rs~~|–––<br>~~ee~~|4.5|–––|nH<br>~~ee)~~|S<br>D<br>G<br>Between lead,<br>6mm (0.25in.)<br>from package<br>and center of die contact<br>~~ee)~~|
|LS|Internal Source Inductance<br>~~rs~~|–––<br>~~ee~~|7.5|–––|||
|Ciss|Input Capacitance<br>~~rs~~<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~|3247<br>~~ee~~|–––<br>~~ee~~|pF<br>~~ee)~~|VGS= 0V<br>VDS= 25V<br>ƒ= 1.0MHz, See Fig. 5<br>~~ee)~~|
|Coss|Output Capacitance<br>~~ee~~|–––<br>~~ee~~|781<br>~~ee~~|–––<br>~~ee~~|||
|Crss|Reverse Transfer Capacitance<br>~~ee~~|–––<br>~~ee~~|211<br>~~ee~~|–––<br>~~ee~~|||
|**Diode Characteristics**<br>~~a~~||~~QO~~|||||
|~~a~~|**Parameter**<br>~~a~~|**Min.**<br>~~QO~~|**Typ.**|**Max. **|**Units**|**Conditions**|
|IS<br>~~a~~|Continuous Source Current<br>(Body Diode)<br>~~a~~|–––<br>~~QO~~|–––|110|A|S<br>D<br>G<br>showing  the<br>integral reverse<br>p-n junction diode.<br>MOSFET symbol|
|ISM|(Body Diode)<br>Pulsed Source Current<br>(Body Diode)|–––|–––|390|||
|VSD|(Body Diode)<br>Diode Forward Voltage<br>~~pe~~<br>~~**e**e~~|–––<br>~~pe~~<br>~~e~~|–––<br>~~pe~~<br>~~e~~|1.3<br>~~pe~~<br>~~ee~~|V<br>~~pe~~<br>~~ee~~|TJ= 25°C, IS= 62A, VGS= 0V<br>pn junction diode.<br>~~pe~~|
|trr|Reverse RecoveryTime<br>~~pe~~<br>~~**e**e~~<br>~~s~~|–––<br>~~pe~~<br>~~e~~|69<br>~~pe~~<br>~~e~~|104<br>~~pe~~<br>~~ee~~|ns<br>~~pe~~<br>~~ee~~|TJ= 25°C, IF= 62A<br>di/dt = 100A/μs<br>~~pe~~<br>~~®~~|
|Qrr|Reverse RecoveryCharge<br>~~**e**e~~<br>~~s~~|–––<br>~~e~~|143<br>~~e~~|215<br>~~ee~~|nC<br>~~ee~~||
|ton|Forward Turn-On Time<br>~~**e**e~~<br>~~s~~<br>~~es~~|Intrinsic turn-on time is negligible(turn-on is dominated byLS+LD)<br>~~e ee~~<br>~~®~~<br>~~es~~|||||



Repetitive rating;  pulse width limited by max. junction temperature. ( See fig. 11 ) Starting TJ = 25°C, L = 138μH, 

RG = 25, IAS = 62A. (See Figure 12) ie) ISD  62A ; di/d  207A/μs, VDD  V(BR)DSS, TJ 175°C. 

C) Pulse width  400μs; duty cycle  2%. © Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A. operation outside rated limits. © This is a typical value at device destruction and represents @ This is a calculated value limited to TJ = 175°C. 

Ris measured at 

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AUIRF3205 

## **Qualification Information[†]** 

|**Qualification Informationlification Informationcation Informationion Informationon Informationn Informationormationrmationationiononn[†]**|**Qualification Informationlification Informationcation Informationion Informationon Informationn Informationormationrmationationiononn[†]**|||
|---|---|---|---|
|**Qualification Level**||Automotive<br>(per AEC-Q101) ††||
|||Comments:<br>This part number(s) passed Automotive qualification.<br>IR’s<br>Industrial<br>and<br>Consumer<br>qualification<br>level<br>is<br>granted by<br>extension of the higher Automotive level.||
|**Moisture Sensitivity Level**||TO-220|N/A|
|**ESD**|Machine Model|Class M4 (+/- 600V)†††<br>AEC-Q101-002||
||Human Body Model|Class H1C (+/- 2000V)†††<br>AEC-Q101-001||
||Charged Device Model|Class C5 (+/- 2000V)†††<br>AEC-Q101-005||
|**RoHS Compliant**||Yes||



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## AUIRF3205 

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 1000<br>VGS<br>TOP 15V<br>10V<br>8.0V<br>7.0V6.0V 0 ee<br>5.5V<br>5.0V<br>BOTTOM4.5V<br> 100<br>Jeo<br> 10<br>4.5V<br>Zainal a<br>17]ST| tt oT Ty<br> 1 ame 20μs PULSE WIDTH T  = 25J °C<br>0.1  1  10  100<br>V     , Drain-to-Source Voltage (V)DS<br>D<br>I   ,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


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 1000<br>VGS<br>TOP 15V<br>10V<br>8.0V<br>7.0V6.0V Ht ee<br>5.5V<br>5.0V<br>BOTTOM 4.5V<br> 100<br>4.5V<br>7 j= =e el ll<br> 10<br>A<br>rnee ee el<br>Aeaime 20μs PULSE WIDTH T  = 175J °C<br> 1<br>0.1  1  10  100<br>V     , Drain-to-Source Voltage (V)DS<br>D<br>I   ,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


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 1000 2.5<br>ID = 107A<br>=eaee T  = 25  CJ ° —— 2.0 PePTTTTTTELE T ELL T<br>T  = 175  CJ °<br>Sa YY<br> 100<br>amnan G e eteeeeenerae<br>HE 1.5 PTT TEE TPA<br>SS —————— TTL ATT TT<br>4[7f§ —}—} —}—}—}— | 1.0 PTT | LAT<br> 10<br>A} TT<br>|} jf | Peer<br>0.5<br>—————— V      = 25V DS PEC<br>20μs PULSE WIDTH VGS = 10V<br> 1 es ee 0.0 CEE ECE 4<br>4 6 8 10 12 -60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>V     , Gate-to-Source Voltage (V)GS T  , Junction TemperatureJ (  C)°<br>(Normalized)<br>D<br>I   ,  Drain-to-Source Current (A)<br>DS(on)<br>R            , Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>


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6000 16<br>VGS   = 0V,     f = 1 MHZ ID = 62A<br>5000 a| | CC C rss  oss   iss   = C  = C  = Cgs  ds gd + C + Cgd gd, C ds   SHORTED 1412 |(ESEaaa| | || |tt | | VV V | DSDSDS== = |  44V 27V  11V tfNeKLft<br>4000 Neste Pt TT ee eT rae<br>Ciss 10<br>eee SSeS ee2 7 46<br>3000 ON a 8 VA,<br>NN — |i tT | tT dt rd] ey<br>ee ll PT TTT<br>2000 PENTEL Coss 6 H+mae|| | TAATAA}| tt<br>ee ey<br>ar 4 4<br>1000 PNA ETT A<br>Crss 2<br>Pr OST PAP<br>0 ee 0 oe<br>1 10 100 0 20 40 60 80 100 120<br>Q   , Total Gate Charge (nC)G<br>VDS, Drain-to-Source Voltage (V)<br>Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs.<br>Drain-to-Source Voltage Gate-to-Source Voltage<br> 1000  10000<br>OPERATION IN THIS AREA LIMITED<br>T  = 175  CJ ° BY RDS(on)<br>a ee | | LL Ty<br> 100  1000<br>jt jae | df | et|<br>10us<br> 10 A  100 Pell een tT eel<br>iff |_| | | |_| AN STIS ETI TTT]<br>100us<br>T  = 25  CJ °<br>1ms<br> 1 poFT)I DP  10 CrYTSltT TTT Si Ate<br>10ms<br> T TCJ == 175  C 25  C° °<br>SA V      = 0 V GS S  Single Pulse e resin:<br>0.1 Pe ETT | tT  1 1 ll<br>0.2 0.8 1.4 2.0 2.6  1  10  100  1000<br>V     ,Source-to-Drain Voltage (V)SD V     , Drain-to-Source Voltage (V)DS<br>GS<br>V     , Gate-to-Source Voltage (V)<br>I   , Drain Current (A) D<br>I     , Reverse Drain Current (A)SD<br>C, Capacitance(pF)<br>**----- End of picture text -----**<br>


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## AUIRF3205 

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120<br>LIMITED BY PACKAGE<br>100 eeSam an<br>Ppa pf yd<br>80<br>PCS<br>ee<br>60 SRR RERNGEREE<br>40 YPTPit| TT| ET| tT| |TTdftT [PINE] EETT TININ. |<br>20 Pit? tite tA<br>Pt} tet et tt yy<br>0 PETE tT tT tT yt tt<br>25 50 75 100 125 150 175<br>T   , Case TemperatureC (  C)°<br>I   , Drain Current (A)D<br>**----- End of picture text -----**<br>


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VDS<br>90%<br>[<br>|<br>10% \.<br>/\<br>VGS lla sl a _____ >| Ko<br>td(on) tr td(off) tf<br>**----- End of picture text -----**<br>


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 1 ee<br>Ses Se ee ae<br>a ce<br>D = 0.50<br>eB<br>| ee<br>I rr<br>0.20 SAE LINE |LE<br>0.1 0.10 A |<br>8s a<br>0.05 PDM<br>Ss<br>| 0.02 (THERMAL RESPONSE) SINGLE PULSE Se ee t1<br>0.01 t2<br>Eaaan ll<br>Notes:<br>1. Duty factor D = t   / t1 2<br>CUA 2. Peak TJ = P DM x  ZthJC + TC<br>0.01<br>0.00001 0.0001 ET 0.001 TET 0.01 0.1  1<br>t  , Rectangular Pulse Duration (sec)1<br>thJC<br>(Z        )<br>Thermal Response<br>**----- End of picture text -----**<br>


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15V<br>VDS L DRIVER<br>RG D.U.T +<br>- [V][DD]<br>IAS<br>20V it<br>tp 0.01<br>**----- End of picture text -----**<br>


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V(BR)DSS<br>~<— tp —><br>/ al<br>/ |<br>IAS<br>Fig 12b. Unclamped Inductive<br>QG<br>i ve<br>QGS > QGD —><br><-<br>VG<br>Charge<br>**----- End of picture text -----**<br>


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500<br>ID<br>TOP 25A<br>NEREEEE<br>44A<br>At<br>400 | BOTTOM 62A<br>PN<br>300 NE [NEES] |<br>NEN<br>BNNGNE  EEE<br>200<br>PAN<br>100 Pi | | RAR] TL<br>iftS}<br>pot<br>0 | SE<br>25 50 75 100 125 150 175<br>Starting T  , Junction TemperatureJ (  C)°<br>AS<br>E     , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


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Current Regulator<br>Same Type as D.U.T.<br>50K<br>12V .2F<br>.3F<br>|LE jy +<br>D.U.T. -VDS<br>VGS — 0<br>(a<br>3mA<br>IG ID<br>Current Sampling Resistors<br>**----- End of picture text -----**<br>


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<br>+<br>®  Ground Plane<br> Low Leakage Inductance<br>Current Transformer<br>-<br>+<br>- - +<br>oR 1 ®<br>(0<br>+<br>‘a<br> -<br> Driver same type as D.U.T.<br>(1)  dv/dtIsp controlled controlledby byDuty Rg Factor "D"<br> D.U.T. - Device Under Test<br>® Driver Gate Drive<br>P.W.<br>Period D =<br>P.W. Period<br>VGS=10V<br>t<br>_,. .<br>@ D.U.T. ISD Waveform<br>Reverse<br>Recovery Body Diode Forward<br>Current "\ Current di/dt a<br>©) D.U.T. VDS Waveform<br>Diode Recovery<br>dv/dt<br>VDD<br>ma<br>Re-Applied<br>Voltage Body Diode  a Forward Drop<br>® Inductor Curent e s ee<br>Ripple   5% ISD<br>**----- End of picture text -----**<br>


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## AUIRF3205 

## **Ordering Information** 

|**Base part**<br>**number**|**Package Type**|**Standard Pack**|**Standard Pack**|**Complete Part Number**|
|---|---|---|---|---|
|||**Form**|**Quantity**||
|AUIRF3205|TO-220|Tube|**Quantity**<br>50|AUIRF3205|



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## AUIRF3205 

## **WORLD HEADQUARTERS:** 

101 N. Sepulveda Blvd., El Segundo, California 90245 

Tel: (310) 252-7105 

www.irf.com 

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Updated at March 10, 2026

Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.

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