Image not available
Illustrative purposes only
AUIRF2805
Power MOSFET, N Channel, 55 V, 75 A, 0.0039 ohm, TO-220AB, Through Hole
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single MOSFETs
- No. of Pins: 3Pins
- Channel Type: N Channel
- Qualification: AEC-Q101
- Power Dissipation: 330W
- Transistor Mounting: Through Hole
- Transistor Polarity: N Channel
- Power Dissipation Pd: 330W
- Rds(on) Test Voltage: 10V
- On Resistance Rds(on): 0.0039ohm
- Transistor Case Style: TO-220AB
- Drain Source Voltage Vds: 55V
- Operating Temperature Max: 175°C
- Continuous Drain Current Id: 75A
- Drain Source On State Resistance: 0.0039ohm
- Automotive Qualification Standard: AEC-Q101
- Gate Source Threshold Voltage Max: 2V
| Delivery and price | |
|---|---|
| Units per pack | 1 |
| Price | 1.63 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
PD - 97690A
## **AUTOMOTIVE GRADE**
## AUIRF2805
## **Features**
## HEXFET[®] Power MOSFET
|||D||**V(BR)DSS**<br>**RDS(on) typ.**|**55V**<br>**3.9m**|
|---|---|---|---|---|---|
|G||S||**max**<br>**ID (Silicon Limited)**<br>**ID (Package Limited)**|**4.7m**<br>**175A**<br>**75A**|
## **Description**
**==> picture [205 x 117] intentionally omitted <==**
**----- Start of picture text -----**<br>
D<br>ro<br>"<br>a ,<br>—~ NS D S<br>. G<br>TO-220AB<br>AUIRF2805<br>G D S<br>Gate Drain Source<br>i<br>**----- End of picture text -----**<br>
## **Absolute Maximum Ratings**
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
||**Parameter**|**Max.**|**Units**|
|---|---|---|---|
|ID@ TC= 25°C|Continuous Drain Current, VGS@ 10V(Silicon Limited)|175|A|
|ID@ TC= 100°C|Continuous Drain Current, VGS @ 10V(Silicon Limited)|120||
|ID@ TC= 25°C|Continuous Drain Current, VGS@ 10V(Package Limited)|75||
|IDM|Pulsed Drain Current|700||
|PD@TC= 25°C|Power Dissipation|330|W|
||Linear Derating Factor<br>~~a~~|2.2<br>~~a~~|W/°C<br>~~a~~|
|VGS|Linear Derating Factor<br>Gate-to-Source Voltage<br>~~a~~|± 20<br>~~a~~|V<br>~~a~~|
|EAS<br>~~Ce~~|Single Pulse Avalanche Energy (ThermallyLimited)<br>~~a~~<br>~~Ce~~|450<br>~~a~~|mJ<br>~~a~~|
|EAS(tested)<br>~~Ce~~|Single Pulse Avalanche EnergyTested Value<br>~~Ce~~|1220||
|IAR<br>~~Ce~~|Avalanche Current<br>~~Cea~~|See Fig. 12a, 12b, 15, 16<br>~~a~~<br>~~ee~~|A|
|EAR<br>|Repetitive Avalanche Energy<br>~~a~~<br>~~re~~||mJ<br>~~ee~~|
|TJ<br>TSTG<br>|Operating Junction and<br>Storage Temperature Range<br>~~a~~<br>~~re~~|-55 to + 175<br>~~a~~<br>~~ee~~|°C<br>~~ee~~|
||Soldering Temperature, for 10 seconds (1.6mm from case )<br>~~re~~|300<br>~~ee~~||
||Soldering Temperature, for 10 seconds (1.6mm from case )<br>Mounting Torque, 6-32 or M3 screw<br>~~re ~~<br>~~GS~~|10 lbf in (1.1N m)<br> ~~ee~~<br>~~GS~~|~~ee~~<br>~~GS~~|
HEXFET[®] is a registered trademark of International Rectifier.
***** Qualification standards can be found at http://www.irf.com/
www.irf.com
1
**Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)**
||**Parameter**|**Min.**|**Typ.**|**Max. **|**Units**|**Conditions**|
|---|---|---|---|---|---|---|
|Qg|Total Gate Charge<br>~~es~~|–––<br>~~es~~|150<br>~~es~~|230<br>~~es~~|nC|ID= 104A<br>VDS= 44V<br>VGS= 10V<br>®|
|Qgs|Gate-to-Source Charge<br>~~es~~|–––<br>~~es~~|38<br>~~es~~|57<br>~~es~~|||
|Qgd|Gate-to-Drain("Miller")Charge|–––|52|78|||
|td(on)|Turn-On DelayTime<br>~~es~~|–––<br>~~es~~|14<br>~~es~~|–––<br>~~es~~|ns|VDD= 28V<br>ID= 104A<br>RG= 2.5<br>VGS= 10V|
|tr|Rise Time<br>~~es~~|–––<br>~~es~~<br>~~se~~|120<br>~~es~~<br>~~se~~|–––<br>~~es~~|||
|td(off)|Turn-Off DelayTime<br>~~es~~|–––<br>~~es~~<br>~~se~~|68<br>~~es~~<br>~~se~~|–––<br>~~es~~|||
|tf|Fall Time|–––<br>~~se~~|110<br>~~se~~|–––|||
|LD|Internal Drain Inductance|–––|4.5|–––|nH|S<br>D<br>G<br>Between lead,<br>6mm (0.25in.)<br>from package<br>and center of die contact|
|LS|Internal Source Inductance|–––|7.5|–––|||
|Ciss|Input Capacitance<br>~~a~~|–––<br>~~a~~|5110<br>~~a~~|–––<br>~~a~~|pF<br>|VGS= 0V<br>VDS= 25V<br>ƒ= 1.0MHz, See Fig. 5|
|Coss|Output Capacitance<br>~~es~~|–––<br>~~es~~|1190<br>~~es~~|–––<br>~~es~~|||
|Crss|Reverse Transfer Capacitance<br>~~es~~|–––<br>~~es~~|210<br>~~es~~|–––<br>~~es~~|||
|Coss<br>~~po~~|Output Capacitance<br>~~es~~<br>~~po~~|–––<br>~~es~~<br>~~po~~|6470<br>~~es~~<br>~~po~~|–––<br>~~es~~<br>~~po~~||VGS= 0V, VDS= 1.0V,ƒ= 1.0MHz|
|Coss<br>~~po~~<br>~~a~~|Output Capacitance<br>~~po~~<br>~~a~~|–––<br>~~po~~<br>|860<br>~~po~~<br>|–––<br>~~po~~<br>||VGS= 0V, VDS= 44V,ƒ= 1.0MHz<br>|
|Cosseff.<br>~~po~~<br>~~a~~|Effective Output Capacitance<br>~~po~~<br>~~a~~|–––<br>~~po~~<br>|1600<br>~~po~~<br>|–––<br>~~po~~<br>||VGS= 0V, VDS= 0V to 44V<br>|
|**Diode Characteristics**<br>~~a~~|||||||
|~~QO~~|**Parameter**<br>~~QO~~|**Min.**<br>~~QO~~|**Typ.**<br>~~QO~~|**Max. **<br>~~QO~~|**Units**<br>~~QO~~|**Conditions**<br>~~QO~~|
|IS|Continuous Source Current<br>(Body Diode)|–––|–––|175|A|S<br>D<br>G<br>showing the<br>integral reverse<br>p-n junction diode.<br>MOSFET symbol|
|ISM|(Body Diode)<br>Pulsed Source Current<br>(Body Diode)|–––|–––|700|||
|VSD|(Body Diode)<br>Diode Forward Voltage<br>~~pf~~<br>~~**e**e~~|–––<br>~~pf~~<br>~~e~~|–––<br>~~pf~~<br>~~e~~|1.3<br>~~pf~~<br>~~ee~~|V<br>~~pf~~<br>~~ee~~|TJ= 25°C, IS= 104A, VGS= 0V<br>pn junction diode.<br>~~pf~~|
|trr|Reverse RecoveryTime<br>~~pf~~<br>~~**e**e~~<br>~~s~~|–––<br>~~pf~~<br>~~e~~|80<br>~~pf~~<br>~~e~~|120<br>~~pf~~<br>~~ee~~|ns<br>~~pf~~<br>~~ee~~|TJ= 25°C, IF= 104A<br>di/dt = 100A/μs<br>~~pf~~<br>~~®~~|
|Qrr|Reverse RecoveryCharge<br>~~**e**e~~<br>~~s~~|–––<br>~~e~~|290<br>~~e~~|430<br>~~ee~~|nC<br>~~ee~~||
|ton|Forward Turn-On Time<br>~~**e**e~~<br>~~s~~<br>~~a~~|Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)<br>~~e ee~~<br>~~®~~<br>~~DO~~|||||
> Notes: ) Repetitive rating; pulse width limited by © Cossoss eff. is a fixed capacitance that gives the same charging time a max. junction temperature. (See fig. 11). as Coss while VDS is rising from 0 to 80% VDSS .oss while VDS is rising from 0 to 80% VDSS .while VDS is rising from 0 to 80% VDSS .DS is rising from 0 to 80% VDSS .is rising from 0 to 80% VDSS .DSS . . @ Starting TJ = 25°C, L = 0.08mH © Limited by TJmaxJmax , see Fig.12a, 12b, 15, 16 for typical repetitive RG = 25, IAS = 104A. (See Figure 12). avalanche performance. T ° ISD J 175°C 104A, di/dt 240A/μs, VDD V(BR)DSS, ®@ This value determined from sample failure population, starting ® Pulse width 400μs; duty cycle 2%. TJ = 25°C, L = 0.08mH, RG = 25, IAS = 104A.J = 25°C, L = 0.08mH, RG = 25, IAS = 104A.= 25°C, L = 0.08mH, RG = 25, IAS = 104A.G = 25, IAS = 104A.= 25, IAS = 104A., IAS = 104A., IAS = 104A.AS = 104A.= 104A.
> © Cossoss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS .oss while VDS is rising from 0 to 80% VDSS .while VDS is rising from 0 to 80% VDSS .DS is rising from 0 to 80% VDSS .is rising from 0 to 80% VDSS .DSS . .
© Limited by TJmaxJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. ®@ This value determined from sample failure population, starting TJ = 25°C, L = 0.08mH, RG = 25, IAS = 104A.J = 25°C, L = 0.08mH, RG = 25, IAS = 104A.= 25°C, L = 0.08mH, RG = 25, IAS = 104A.G = 25, IAS = 104A.= 25, IAS = 104A., IAS = 104A., IAS = 104A.AS = 104A.= 104A. Ris measured at Ty of approximately 90°C.
www.irf.com
2
|**Qualification Information†**|**Qualification Information†**|||
|---|---|---|---|
|**Qualification Level**||Automotive<br>(per AEC-Q101)††||
|||Comments:<br>This part number(s) passed Automotive qualification.<br>IR’s<br>Industrial<br>and<br>Consumer<br>qualification<br>level<br>is<br>granted by<br>extension of the higher Automotive level.||
|**Moisture Sensitivity Level**||TO-220|N/A|
|**ESD**|Machine Model|Class M4 (+/- >800V)†††<br>AEC-Q101-002||
||Human Body Model|Class H3A (+/- 5000V)†††<br>AEC-Q101-001||
||Charged Device Model|Class C5 (+/- >2000V)†††<br>AEC-Q101-005||
|**RoHS Compliant**||Yes||
www.irf.com
3
**==> picture [219 x 538] intentionally omitted <==**
**----- Start of picture text -----**<br>
1000<br>VGS<br>TOP 15V<br> 10V<br> 8.0V<br> 7.0V<br> 6.0V | aE al<br> 5.5V<br>100 5.0V eI<br>BOTTOM 4.5V<br>a<br>4.5V<br>VG Y aor ||<br>VY<br>10<br>BnFEE<br>SS ee<br>20μs PULSE WIDTH<br>a Tj = 25°C aa<br>1<br>aniline<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 1. Typical Output Characteristics<br>1000<br>T = 25°C<br>J<br>P| | | | Lge T J = 175°C<br>A<br>PAL<br>100<br>PA EE<br>PY | | ft ft Py yt ft ft<br>Poof | | tt<br>V = 25V<br>DS<br>20μs PULSE WIDTH<br>10<br>4.0 5.0 6.0 7.0 8.0 9.0 10.0<br>VGS, Gate-to-Source Voltage (V)<br>A)<br><br>ID, Drain-to-Source Current<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>
**==> picture [232 x 196] intentionally omitted <==**
**----- Start of picture text -----**<br>
1000<br>VGS<br>TOP 15V<br> 10V<br> 8.0V<br> 7.0V<br> 6.0V TL AAI<br> 5.5V<br> 5.0V A<br>BOTTOM 4.5V<br>WM ec<br>100<br>eee, | 4.5V el<br>ey’ey (oeieee ema|<br>ey A a<br>20μs PULSE WIDTH<br>7 Ai Tj = 175°C<br>10<br>PLL il<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>
**Fig 2.** Typical Output Characteristics
**==> picture [209 x 200] intentionally omitted <==**
**----- Start of picture text -----**<br>
200<br>160<br>TJ = 175°C oT<br>120<br>T = 25°C<br>80 fy J<br>40<br>V = 25V<br>DS<br>20μs PULSE WIDTH<br>0<br>0 40 80 120 160 200<br>ID, Drain-to-Source Current (A)<br>Gfs, Forward Transconductance (S)<br>**----- End of picture text -----**<br>
**Fig 3.** Typical Transfer Characteristics
**Fig 4.** Typical Forward Transconductance Vs. Drain Current
www.irf.com
4
**==> picture [441 x 544] intentionally omitted <==**
**----- Start of picture text -----**<br>
10000 20<br>V C SHORTEDGS iss = 0V, f = 1 MHZ = C gs + C gd , C ds I D = 104A VVDS= 28V DS = 44V<br>8000 |i| | C = C 16 pap| ak}PX]<br>rss gd<br>Coss = Cds + Cgd<br><i 12 eer<br>6000 mM ee VA<br>Ciss<br>PNT EHH 8 | | ||<br>4000<br>PONE Baal 4 ff<br>SN | 4 Aa<br>2000<br>pe | A<br>Coss<br>Crss 0<br>0 || st tr —_E LO<br>0 40 80 120 160 200 240<br>1 10 100<br> QG Total Gate Charge (nC)<br>VDS, Drain-to-Source Voltage (V)<br>Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs.<br>Drain-to-Source Voltage Gate-to-Source Voltage<br>1000.0 10000<br>OPERATION IN THIS AREA<br>LIMITED BY RDS(on)<br>T J = 175°C<br>100.0 1000<br>10.0 100<br>100μsec<br>T = 25°C 1msec<br>J<br>1.0 10<br>Tc = 25°C<br>a Tj = 175°C Pe 10msec Sette<br>0.1 Fissese VGS GS ee = 0V ee 1 Sin eel: gle Pulse<br>0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 1 10 100 1000<br>VSD, Source-toDrain Voltage (V) VDS , Drain-toSource Voltage (V)<br>ISD, Reverse Drain Current (A)<br>C, Capacitance (pF)<br>VGS, Gate-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>
**==> picture [211 x 200] intentionally omitted <==**
**----- Start of picture text -----**<br>
1000.0<br>T J = 175°C<br>100.0<br>10.0<br>T = 25°C<br>J<br>1.0<br>a<br>0.1 Fissese VGS GS ee = 0V<br>0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8<br>VSD, Source-toDrain Voltage (V)<br>ISD, Reverse Drain Current (A)<br>**----- End of picture text -----**<br>
**Fig 7.** Typical Source-Drain Diode Forward Voltage
**Fig 8.** Maximum Safe Operating Area
www.irf.com
5
**==> picture [210 x 192] intentionally omitted <==**
**----- Start of picture text -----**<br>
3.0<br>IDD = 175A<br>2.5 PETEE ETTEE ET ET EE<br>Pt tT tee tT Ty<br>2.0 Pt tt tee TT yt i<br>PtERRtTERRtTtT teRReeeeETEeRReeeeETEeETEeEe<br>1.5<br>ERRPi]Pi] te | preAesAes<br>1.0 PtEeetT tT | Ereeee<br>EeetT aaeeeeEreeee<br>0.5 HT}Pt Tt}tT tT tTtytetyytyyy tetyytyyy tyyy<br>Pt tT tT tytetyytyyy yytyyy yy<br>V GS = 10V<br>0.0 PEE eT TT [[Tt]]]<br>-60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>T , Junction TemperatureJJ ( C)°°<br>(Normalized)<br>DS(on)<br>R , Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>
**==> picture [438 x 534] intentionally omitted <==**
**----- Start of picture text -----**<br>
180<br>IDD = 175A<br>150 aa LIMITED BY PACKAGE naan 2.5 PETEE ETTEE ET ET EE<br>| \ || [| Pt tT tee tT Ty<br>120 | | | RAE EY po 2.0 Pt tt tee TT yt i<br>PT| {|| || A repoCRE PtERRtTERRtTtT teRReeeeETEeRReeeeETEeETEeEe<br>90 1.5<br>peBRN ERRPi]Pi] te | preAesAes<br>60 PEtPT tT ttEETyt yyEE EATN 1.0 PtEeetT | aaeeeeEreeee<br>30 PetPet teeEET EEEE EN 0.5 HT}Pt tT Tt}tT tT tTtytetyytyyy<br>V GS = 10V<br>0 PTT} eT TE tt 0.0 PEE eT TT [[Tt]]]<br>25 50 75 100 125 150 175 -60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>T , Case TemperatureC ( C)° T , Junction TemperatureJJ ( C)°°<br>Fig 9. Maximum Drain Current Vs. Fig 10. Normalized On-Resistance<br>Vs. Temperature<br>Case Temperature<br> 1<br>nel<br>D = 0.50<br>ee EEL ee eee<br>0.1 0.20<br>0.10<br>SS eee eeees<br>0.05<br>ee ae<br>0.02 SINGLE PULSE<br>0.01 (THERMAL RESPONSE) P DM<br>0.01 =2 FayTT TITCh t 1<br>t 2<br>a<br>Notes:<br>1. Duty factor D = t / t1 2<br>Pei 2. Peak T J = P DM x Z thJC + T C<br>0.001 i<br>0.00001 0.0001 0.001 0.01 0.1<br>t , Rectangular Pulse Duration (sec)1<br>(Normalized)<br>I , Drain Current (A)D<br>DS(on)<br>R , Drain-to-Source On Resistance<br>thJC<br>(Z )<br>Thermal Response<br>**----- End of picture text -----**<br>
**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
6
**==> picture [150 x 98] intentionally omitted <==**
**----- Start of picture text -----**<br>
15V<br>VDS L DRIVER<br>RG D.U.T +<br>- [V][DD]<br>IAS<br>w el<br>2V0VGS<br>E o+k tp 0.01<br>**----- End of picture text -----**<br>
**Fig 12a.** Unclamped Inductive Test Circuit
**==> picture [121 x 92] intentionally omitted <==**
**----- Start of picture text -----**<br>
V(BR)DSS<br>tp<br>/ |<br>IAS<br>**----- End of picture text -----**<br>
**Fig 12b.** Unclamped Inductive Waveforms
**==> picture [131 x 107] intentionally omitted <==**
**----- Start of picture text -----**<br>
QG —- 3<br>bee QGS QGD<br>VG<br>Charge<br>**----- End of picture text -----**<br>
**Fig 13a.** Basic Gate Charge Waveform
**==> picture [130 x 149] intentionally omitted <==**
**----- Start of picture text -----**<br>
Current Regulator<br>a Same Type as D.U.T.<br>50K<br>12V .2F<br>.3F<br>+<br>The D.U.T. | -VDS<br>VGS<br>3mA<br>a |<br>IG ID<br>Current Sampling Resistors<br>**----- End of picture text -----**<br>
**==> picture [209 x 200] intentionally omitted <==**
**----- Start of picture text -----**<br>
1000<br>I D<br>Pi] [tt] TOP 43A<br>87A<br>800 BOTTOM 104A<br>foaeeeNESE ce<br>600<br>ENE<br>ERNE<br>400 RIN|<br>BSNEXUREee<br>200 SERSNONEEEEeptyOSS A<br>Pt rE<br>0 SS<br>25 50 75 100 125 150 175<br>Starting Tj, Junction Temperature ( C)°<br>AS<br>E , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>
**Fig 12c.** Maximum Avalanche Energy Vs. Drain Current
**==> picture [213 x 197] intentionally omitted <==**
**----- Start of picture text -----**<br>
4.0<br>EEL EEE ID = 250μA E EE<br>3.0<br>PPS<br>LLANE<br>2.0<br>PEEP<br>1.0 EELS<br>-75 -50 -25 0 25 50 75 100 125 150 175<br>TJ , Temperature ( °C )<br>VGS(th) Gate threshold Voltage (V)<br>**----- End of picture text -----**<br>
**Fig 14.** Threshold Voltage Vs. Temperature
**Fig 13b.** Gate Charge Test Circuit
www.irf.com
7
**==> picture [442 x 544] intentionally omitted <==**
**----- Start of picture text -----**<br>
10000<br>Duty Cycle = Single Pulse<br>1000 cc IEITIP Allowed avalanche Current vs<br>avalanche pulsewidth, tav<br>| assuming avalanche losses. Note: In no Tj = 25°C due to cr<br>0.01<br>100 TE case should Tj be allowed to<br>exceed Tjmax<br>0.05<br>0 .10<br>10 .<br>1 en i<br>1.0E-07 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01<br>tav (sec)<br>Fig 15. Typical Avalanche Current Vs.Pulsewidth<br>500<br>Notes on Repetitive Avalanche Curves , Figures 15, 16:<br>Bani TOP Single Pulse<br>(For further info, see AN-1005 at www.irf.com)<br>BOTTOM 10% Duty Cycle<br>1. Avalanche failures assumption:<br>400 ID = 104A<br>Naa Purely a thermal phenomenon and failure occurs at a<br> temperature far in excess of Tjmax. This is validated for<br> every part type.<br>300 2. Safe operation in Avalanche is allowed as long asTjmax is<br>a. NEEee<br> not exceeded.<br>P T NE 3. Equation below based on circuit and waveforms shown in<br>a EE EE TE Figures 12a, 12b.<br>200<br>4. PD (ave) = Average power dissipation per single<br>PT TTTeaNe [NEEL] eee avalanche pulse.<br>5. BV = Rated breakdown voltage (1.3 factor accounts for<br>100 Pit TT NEETLLL voltage increase during avalanche).<br>6. Iav = Allowable avalanche current.<br>SRRRRREDNGae 7. T = Allowable rise in junction temperature, not to exceed<br>0 PEE TT TT | NU Tjmax (assumed as 25°C in Figure 15, 16).<br>25 50 75 100 125 150 175 tav = Average time in avalanche.<br> D = Duty cycle in avalanche = tav ·f<br>Starting TJ , Junction Temperature (°C) ZthJC(D, tav) = Transient thermal resistance, see figure 11)<br>EAR , Avalanche Energy (mJ)<br>Avalanche Current (A)<br>**----- End of picture text -----**<br>
- ZthJC(D, tav) = Transient thermal resistance, see figure 11)
- **PD (ave) = 1/2 ( 1.3·BV·Iav) =** A **T/ ZthJC Iav = 2** A **T/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav**
**Fig 16.** Maximum Avalanche Energy Vs. Temperature
www.irf.com
8
**==> picture [415 x 164] intentionally omitted <==**
**----- Start of picture text -----**<br>
Driver Gate Drive<br>P.W.<br>D.U.T + {¢$ P.W. Period —— | D = —— Period<br>) [©)] Circuit Layout Considerations | V i t GS=10V<br>| — - LowGroundStray Inductance Plane<br>owLeakage Inductance @ D.U.T. ISD Waveform<br>+<br>Reverse<br>Recovery Body Diode Forward<br>oi - [1] Current Transformer - ® + Current r Current di/dt NN<br>® D.U.T. VDS Waveform<br>Diode Recoverydv/dt ‘ ’<br>00 - VDD<br>ay<br> Re-Applied<br>Re (4 spvidt controlledriversame controlledtype as by by DutyRgD.U.T. Factor"D" Vo p +- Voltage ® Inductor Curent Body Diode Forward Drop<br><br>D.U.T. - Device Under Test Ripple 5% e s ISD ee<br>**----- End of picture text -----**<br>
## **Fig 17.** eak Diode Recovery dv/dt Test Circuit or N-Channel HEXFET ® ower MOSFETs
**==> picture [16 x 12] intentionally omitted <==**
**----- Start of picture text -----**<br>
s<br><br>**----- End of picture text -----**<br>
**Fig 18a.** Switching Time Test Circuit
**==> picture [137 x 93] intentionally omitted <==**
**----- Start of picture text -----**<br>
VDS<br>90%<br>10%<br>VGS |\< v l > !\ r i e<br>td(on) tr td(off) tf<br>**----- End of picture text -----**<br>
**Fig 18b.** Switching Time Waveforms
www.irf.com
9
www.irf.com
10
## **Ordering Information**
|**Base part**<br>**number**|**Package Type**|**Standard Pack**|**Standard Pack**|**Complete Part Number**|
|---|---|---|---|---|
|||**Form**|**Quantity**||
|AUIRF2805|TO-220|Tube|**Quantity**<br>50|AUIRF2805|
www.irf.com
11
## **WORLD HEADQUARTERS:**
101 N. Sepulveda Blvd., El Segundo, California 90245 Tel: (310) 252-7105
www.irf.com
12
Updated at February 9, 2023
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
About Novapart
Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
Learn more →Stock Shortage Specialist
When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
Request a quote →Compliant Alternatives
We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
BOM Analysis service →