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AUIRF1404
Power MOSFET, N Channel, 40 V, 160 A, 4000 µohm, TO-220AB, Through Hole
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- Manufacturer: INFINEON
- Product type: Single MOSFETs
- Transistor Polarity:N Channel; Continuous Drain Current Id:160A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0035oh; Available until stocks are exhausted Alternative available
- MSL: -
- No. of Pins: 3Pins
- Channel Type: N Channel
- Product Range: -
- Qualification: AEC-Q101
- Power Dissipation: 333W
- Transistor Mounting: Through Hole
- Rds(on) Test Voltage: 10V
- Transistor Case Style: TO-220AB
- Drain Source Voltage Vds: 40V
- Operating Temperature Max: 175°C
- Continuous Drain Current Id: 160A
- Drain Source On State Resistance: 4000µohm
- Gate Source Threshold Voltage Max: 2V
| Delivery and price | |
|---|---|
| Units per pack | 250 |
| Price | 4.11 € |
| Current stock | 500+ |
| Lead time | 7 days |
Datasheet
**AUTOMOTIVE GRADE** ## ~~Cinfin eon~~ AUIRF1404 ~~——~~ HEXFET[® ] Power MOSFET **VDSS 40V RDS(on) typ. 3.5m** **max. 4.0m** **ID (Silicon Limited) 202A** ~~==~~ **ID (Package Limited) 160A** S D G D TO-220AB AUIRF1404 ## **Features** - Advanced Planar Technology - Low On-Resistance - Dynamic dv/dt Rating - 175°C Operating Temperature - Fast Switching - Fully Avalanche Rated - Repetitive Avalanche Allowed up to Tjmax - Lead-Free, RoHS Compliant - Automotive Qualified * ## **Description** Specifically designed for Automotive applications, this Stripe S Planar design of HEXFET[®] Power MOSFETs utilizes the latest G D processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and TO-220AB AUIRF1404 ruggedized device design that HEXFET[®] power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of **G D S** other applications. Gate Drain Source ~~-——}——}—_~~ **Standard Pack Base part number Package Type Orderable Part Number Form Quantity** AUIRF1404 TO-220 Tube 50 AUIRF1404 ~~ee~~ **Absolute Maximum Ratings** Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified. |**Symbol**|**Parameter**|**Max.**|**Units**| |---|---|---|---| |ID@ TC= 25°C|Continuous Drain Current, VGS@ 10V (Silicon Limited)|202|A| |ID @TC= 100°C|Continuous Drain Current,VGS @10V(Silicon Limited)|143|| |ID@ TC= 25°C|Continuous Drain Current, VGS@ 10V (Package Limited)|160|| |IDM|Pulsed Drain Current|808|| |PD@TC= 25°C|Maximum Power Dissipation|333|W| ||Linear DeratingFactor|2.2|W/°C| |VGS<br>~~————————~~|Gate-to-SourceVoltage<br>~~————————~~|± 20<br>~~————————~~|V<br>~~————————~~| |EAS<br>~~————————~~|Single Pulse Avalanche Energy (ThermallyLimited) <br>~~————————~~|620<br>~~————————~~|mJ<br>~~————————~~| |IAR<br>~~————————~~|Avalanche Current<br>~~————————~~|See Fig.15,16, 12a, 12b<br>~~————————~~|A<br>~~————————~~| |EAR<br>~~————————~~|Repetitive Avalanche Energy <br>~~————————~~||mJ<br>~~————————~~| |dv/dt<br>~~————————~~|Peak Diode Recoverydv/dt<br>~~————————~~|1.5<br>~~————————~~|V/ns<br>~~————————~~| |TJ<br>TSTG<br>~~—~~|Operating Junction and<br>Storage Temperature Range|-55 to + 175|°C| |~~—~~|SolderingTemperature,for 10 seconds(1.6mm from case)|300|| ||Mountingtorque,6-32 or M3 screw|10 lbf•in(1.1N•m)<br>|| 1 2017-09-18 AUIRF1404 ~~LLL~~ ## ~~Cinfin eon~~ **Static @ TJ = 25°C (unless otherwise specified)** |Qg<br>~~e~~~~**s**~~|Total Gate Charge|–––|131|196|nC<br>~~Pf~~|ID= 121A<br>VDS= 32V<br>VGS= 10V<br>~~Pf~~| |---|---|---|---|---|---|---| |g<br>Qgs<br>~~e~~~~**s**~~<br>~~R~~|Gate-to-Source Charge|–––|36|–––||| |Qgd<br>~~e~~~~**s**~~<br>~~R~~<br>~~Rs~~|Gate-to-Drain Charge|–––|37|56||| |gd<br>td(on)<br>~~R~~<br>~~Rs~~|Turn-On Delay Time|–––|17|–––|ns<br>~~+++},~~<br>~~|~~|VDD= 20V<br>ID= 121A<br>RG= 2.5<br>RD=0.2<br>~~&~~| |d(on)<br>tr<br>~~Rs~~|Rise Time|–––|190|–––||| |td(off)<br>~~es~~|Turn-Off DelayTime|–––|46|–––||| |d(off)<br>tf<br>~~es~~<br>~~+++},~~|Fall Time<br>~~+++},~~|–––<br>~~+++},~~|33<br>~~+++},~~|–––<br>~~+++},~~||| |LD<br>~~es~~<br>~~+++},~~|Internal Drain Inductance<br>~~+++},~~|–––<br>~~+++},~~|4.5<br>~~+++},~~|–––<br>~~+++},~~|nH<br>~~+++},~~<br>~~|~~<br>~~s~~|Between lead,<br>6mm (0.25in.)<br>from package<br>and centerofdie contact<br>~~&~~<br>~~ee~~<br>~~ee~~| |LS<br>~~+++},~~<br>~~es~~<br>~~**es** nn~~<br>~~**e**~~|Internal Source Inductance<br>~~+++},~~<br>~~nn~~<br>~~**e**s~~|–––<br>~~+++},~~<br>~~s~~|7.5<br>~~+++},~~<br>~~s~~|–––<br>~~+++},~~<br>~~s~~||| |Ciss<br>~~+++},~~<br>~~es~~<br>~~**es** nn~~<br>~~**e**~~|Input Capacitance<br>~~+++},~~<br>~~nn~~<br>~~**e**s~~|–––<br>~~+++},~~<br>~~s~~|5669<br>~~+++},~~<br>~~s~~|–––<br>~~+++},~~<br>~~s~~|pF<br>~~+++},~~<br>~~|~~<br>~~s~~|VGS= 0V<br>VDS= 25V<br>ƒ= 1.0MHz,See Fig. 5<br>~~&~~<br>~~ee~~<br>~~ee~~| |Coss<br>~~es~~<br>~~**es** nn~~<br>~~**e**~~|Output Capacitance<br>~~nn~~<br>~~**e**s~~|–––<br>~~s~~|1659<br>~~s~~|–––<br>~~s~~||| |Crss<br>~~**es** nn~~<br>~~**e**~~|ReverseTransferCapacitance<br>~~nn~~<br>~~**e**s~~|–––<br>~~s~~|223<br>~~s~~|–––<br>~~s~~||| |Coss<br>~~**es** nn~~<br>~~**e**~~<br>~~es~~|OutputCapacitance<br>~~nn~~<br>~~**e**s~~|–––<br>~~s~~|6205<br>~~s~~|–––<br>~~s~~||VGS=0V,VDS= 1.0Vƒ= 1.0MHz<br>~~ee~~<br>~~ee~~<br>~~Po~~| |Coss<br>~~**e**~~<br>~~es~~<br>~~s~~|Output Capacitance<br>~~**e**s~~|–––<br>~~s~~|1467<br>~~s~~|–––<br>~~s~~||VGS =0V, VDS =32V ƒ=1.0MHz<br>~~ee~~<br>~~Po~~<br>~~PO~~| |Coss eff.<br>~~**e**~~<br>~~es~~<br>~~s~~|Effective Output Capacitance<br>~~**e**s~~|–––<br>~~s~~|2249<br>~~s~~|–––<br>~~s~~||VGS= 0V,VDS= 0V to 32V<br>~~ee~~<br>~~Po~~<br>~~PO~~| |**Diode Characteristics**<br>~~**e**s ee~~<br>~~s~~<br>~~PO~~<br>~~po~~||||||| |~~po4,~~|**Parameter **<br>~~4,~~|**Min.**<br>~~4,~~|**Typ. M**<br>~~4,~~|**. Max.**<br>~~4,~~|**Units**<br>~~),~~|**Conditions**<br>~~),~~<br>~~&~~| |IS<br>~~po4,~~|Continuous Source Current<br>(Body Diode)<br>~~4,~~|–––<br>~~4,~~|––– 202<br>~~4,~~|––– 202<br>~~4,~~|A<br>~~),~~<br>~~(QO~~|MOSFET symbol<br>showing the<br>integral reverse<br>p-n junction diode.<br>~~),~~<br>~~&~~| |ISM<br>~~4,~~<br>~~es~~|Pulsed Source Current<br>(Body Diode)<br>~~4,~~<br>~~TD~~|–––<br>~~4,~~<br>~~(QO~~|–––<br>~~4,~~<br>~~(QO~~|808<br>~~4,~~<br>~~(QO~~||| |VSD<br>~~4,~~<br>~~es~~<br>~~ss~~|Diode Forward Voltage<br>~~4,~~<br>~~TD~~<br>~~ss~~|–––<br>~~4,~~<br>~~(QO~~<br>~~ss~~|–––<br>~~4,~~<br>~~(QO~~<br>~~ss~~|1.5<br>~~4, ~~<br>~~(QO~~<br>~~ss~~|V<br> ~~),~~<br>~~(QO~~<br>~~H——™E~~|TJ =25°C,IS=121A,VGS =0V<br>~~),~~<br>~~&~~<br>~~H——™E~~| |trr<br>~~es~~<br>~~ss~~<br>~~ee~~|Reverse Recovery Time<br>~~TD~~<br>~~ss~~|–––<br>~~(QO~~<br>~~ss~~|78<br>~~(QO~~<br>~~ss~~|117<br>~~(QO~~<br>~~ss~~|ns<br>~~(QO~~<br>~~H——™E~~|TJ= 25°C ,IF= 121A<br>nC di/dt = 100A/µs<br>~~H——™E~~| |Qrr<br>~~ss~~<br>~~ee~~|Reverse RecoveryCharge<br>~~ss~~|–––<br>~~ss~~|163<br>~~ss~~|245<br>~~ss~~|nC di/dt = 100A/<br>~~H——™E~~|| |ton<br>~~ss~~<br>~~ee~~|Forward Turn-On Time<br>~~ss~~|Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)<br>~~ss H——™E~~||||| ## **Notes:** > Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11) starting TJ = 25°C, L = 85H, RG = 25, IAS = 121A, VGS =10V. (See fig. 12) - ISD 121A, di/dt 130A/µs, VDD V(BR)DSS, TJ 175°C. Pulse width 400µs; duty cycle 2%. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 160A. > R is measured at TJ of approximately 90°C. 2 2017-09-18 ~~Cinfineon~~ AUIRF1404 ~~[~~ **==> picture [197 x 546] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>VGS<br>TOP 15V<br>10V<br>8.0V<br>7.0V<br>6.0V<br>5.5V<br>5.0V<br>BOTTOM 4.5V y Zest<br> 100<br> 10 aA A 4.5V AT<br>ae<br>HTanima 20µs PULSE WIDTH T = 25J °C<br> 1<br>0.1 1 10 100<br>V , Drain-to-Source Voltage (V)DS<br>Fig. 1 Typical Output Characteristics<br> 1000 ==========>=>> ==<br>crPoe T J = 25 C° Caer<br>coauoy eee T = 175 C J ° |<br>cay [aan] 4GAameuns<br>PALLET<br> 100<br>Pye tT pe<br>PAYEE EEE EL EEL ELE<br>PUL TTT TET<br>V = 25VDS<br>Ch 20µs PULSE WIDTH<br> 10<br>4 5 6 7 8 9 en 10 11 12<br>V , Gate-to-Source Voltage (V)GS<br>D<br>I , Drain-to-Source Current (A)<br>D<br>I , Drain-to-Source Current (A)<br>**----- End of picture text -----**<br> **Fig. 3** Typical Transfer Characteristics **==> picture [196 x 188] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>VGS<br>TOP 15V<br>10V<br>8.0V<br>7.0V<br>6.0V<br>5.5V<br>5.0V<br>BOTTOM 4.5V HAE EHH<br> 100<br>4.5V<br>Aa Z|<br> 10 ”<br>et<br> 1 THIine 20µs PULSE WIDTH T = 175J °C<br>0.1 1 10 100<br>V , Drain-to-Source Voltage (V)DS<br>D<br>I , Drain-to-Source Current (A)<br>**----- End of picture text -----**<br> **Fig. 2** Typical Output Characteristics **==> picture [205 x 187] intentionally omitted <==** **----- Start of picture text -----**<br> 2.5<br>ID = 202A<br>Ps TE EEL ELL EL<br>PETE<br>2.0 ETT ELL<br>1.5 PETE ETT LLAMA<br>POEL ELA<br>SEGneepZanen<br>1.0<br>pd<br>0.5 SennenTTT<br>VGS = 10V<br>0.0 TPT<br>-60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>PLETE T , Junction TemperatureJ ET ( C)°<br>(Normalized)<br>DS(on)<br>R , Drain-to-Source On Resistance<br>**----- End of picture text -----**<br> **Fig. 4** Normalized On-Resistance vs. Temperature 3 2017-09-18 ~~Cinfineon~~ AUIRF1404 ~~Ll~~ **==> picture [209 x 167] intentionally omitted <==** **----- Start of picture text -----**<br> 10000<br>VGS = 0V, f = 1 MHZ<br>Ciss = Cgs + Cgd, Cds SHORTED<br>8000 || Crss = Cgd<br>C = C + C<br>oss ds gd<br>CT<br>6000 Ciss<br>A a<br>4000 NULB TAT<br>Coss<br>a I alll<br>2000<br>Crss<br>0<br>1 To EP 10 100<br>C, Capacitance(pF)<br>**----- End of picture text -----**<br> VDS, Drain-to-Source Voltage (V) **==> picture [194 x 187] intentionally omitted <==** **----- Start of picture text -----**<br> 20<br>ID = 121A VDS= 32V<br>VDS= 20V<br>4-H<br>16<br>er<br>12<br>F | | | [| |ldlA<br>A<br>8<br>PtCOTA | | PA<br>4<br>FOR TEST CIRCUIT<br>0 YjVaneenas | | SEE FIGURE 13<br>0 50 100 150 200<br>Q , Total Gate Charge (nC)G<br>GS<br>V , Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br> **Fig 5.** Typical Capacitance vs. Drain-to-Source Voltage **Fig 6.** Typical Gate Charge vs. Gate-to-Source Voltage **==> picture [495 x 190] intentionally omitted <==** **----- Start of picture text -----**<br> 1000 10000<br>OPERATION IN THIS AREA LIMITED<br>BY RDS(on)<br>T = 175 CJ °<br> 100 Po pea EEE 1000 |<br>YTSa522anaaaaaae| T7T7i | tT | yt tT th hh Se nenieel~ 10us<br> 10 100 100us<br>o//(oooaeene He<br>a T = 25 CJ ° SSS SSSeee<br>Bapee eeEE Sea ee e 1ms LH<br> 1 i | ET tT 10 ts 10ms<br>— A De<br>ee ee ee ee ee ee T TCJ == 175 C 25 C° ° eeeoooa oeEE<br>0.1 ATE V = 0 V GS 1 Sse Single Pulse<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 1 10 100<br>V ,Source-to-Drain Voltage (V)SD V , Drain-to-Source Voltage (V)DS<br>I , Drain Current (A) D<br>I , Reverse Drain Current (A)SD<br>**----- End of picture text -----**<br> **Fig. 7** Typical Source-to-Drain Diode Forward Voltage **Fig 8.** Maximum Safe Operating Area 2017-09-18 4 ~~Cinfineon~~ AUIRF1404 ~~[~~ **==> picture [206 x 210] intentionally omitted <==** **----- Start of picture text -----**<br> 250<br>Limited By Package<br>200<br>Teo<br>eee<br>150<br>100<br>50<br>PEELING<br>0<br>25 50 75 100 125 150 175<br>PTT TEI<br> TC , Case Temperature (°C)<br>ID, Drain Current (A)<br>**----- End of picture text -----**<br> **Fig 10a.** Switching Time Test Circuit he **Fig 9.** Maximum Drain Current vs. Case Temperature **Fig 10b.** Switching Time Waveforms **==> picture [412 x 187] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>D = 0.50<br>0.1 0.20<br>0.10 jieal<br>0.05<br>0.02 SINGLE PULSE<br>0.01 (THERMAL RESPONSE) PDM<br>0.01<br>t1<br>t2<br>Notes:<br>1. Duty factor D = t / t 1 2<br>2. Peak T J = P DM x Z thJC + TC<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1<br>t , Rectangular Pulse Duration (sec)1<br>thJC<br>(Z )<br>Thermal Response<br>**----- End of picture text -----**<br> **Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 2017-09-18 5 ~~Cinfineon~~ AUIRF1404 ~~LLL~~ **==> picture [499 x 204] intentionally omitted <==** **----- Start of picture text -----**<br> 15V<br>1500<br>ID<br>L DRIVER | | TOP 49A<br>VDS<br>101A<br>|<br>1200 BOTTOM 121A<br>R G D.U.T + A |||<br>- [V][DD]<br>IAS A 900<br>v st PN | | fT |<br>20V<br>tp 0.01<br>+ ae |y | Nee eee<br>600<br>Ne ENE ee<br>Fig 12a. Unclamped Inductive Test Circuit<br>PSA IA Pt<br>300<br>V(BR)DSS(BR)DSS PRS SE<br>tp<br>i" > 0 eee ~~<br>25 50 75 100 125 150 175<br>Starting T , Junction TemperatureJ ( C)°<br>AS<br>E , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br> **Fig 12a.** Unclamped Inductive Test Circuit **==> picture [188 x 276] intentionally omitted <==** **----- Start of picture text -----**<br> V(BR)DSS(BR)DSS<br>tp<br>i" ><br> Unclamped Inductive Waveforms<br>Id<br>Vds<br>Vgs<br>Vgs(th)<br>Qgs1 Qgs2 Qgd Qgodr<br>**----- End of picture text -----**<br> **Fig 12c.** Maximum Avalanche Energy vs. Drain Current **==> picture [18 x 9] intentionally omitted <==** **----- Start of picture text -----**<br> IAS<br>**----- End of picture text -----**<br> **Fig 12b.** Unclamped Inductive Waveforms **==> picture [213 x 196] intentionally omitted <==** **----- Start of picture text -----**<br> 4.0<br>3.0<br>ID = -250µA<br>2.0<br>1.0<br>-75 -50 -25 0 25 50 75 100 125 150<br>TJ , Temperature ( °C )<br>-VGS(th) Gate threshold Voltage (V)<br>**----- End of picture text -----**<br> **Fig 13a.** Gate Charge Waveform **Fig 14.** Threshold Voltage vs. Temperature **Fig 13b.** Gate Charge Test Circuit 6 2017-09-18 ~~Cinfineon~~ AUIRF1404 ~~LLL~~ **==> picture [445 x 197] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>Duty Cycle = Single Pulse<br>0.01 Allowed avalanche Current vs<br>100 avalanche pulsewidth, tav<br>assuming Tj = 25°C due to<br>avalanche losses<br>0.05<br>pe ener Gu ioe<br>SS<br>0.10<br>FT a<br>10 TACT<br>1<br>Ht<br>1.0E-08 1.0E-07 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01<br>tav (sec)<br>Avalanche Current (A)<br>**----- End of picture text -----**<br> **Fig 15.** Typical Avalanche Current vs. Pulse width **==> picture [213 x 195] intentionally omitted <==** **----- Start of picture text -----**<br> 400<br>TOP Single Pulse<br>350 BOTTOM 10% Duty Cycle<br>ID = 121A<br>ENG<br>300 PEN EET TTT<br>250 PEEING<br>200 EEE EE<br>SERENE<br>150<br>100<br>PETE TINGE<br>PEEL<br>50 EAN Ee<br>PEEL<br>0 EE EL NK<br>25 50 75 100 125 150 175<br>Starting TJ , Junction Temperature (°C)<br>EAR , Avalanche Energy (mJ)<br>**----- End of picture text -----**<br> **Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.infineon.com)** 1. Avalanche failures assumption: - Purely a thermal phenomenon and failure occurs at a temperature far in - excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long as Tjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 12a, 12b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 15, 16). - tav = Average time in avalanche. - D = Duty cycle in avalanche = tav ·f - ZthJC(D, tav) = Transient thermal resistance, see Figures 13) **PD (ave) = 1/2 ( 1.3·BV·Iav) =** **T/ ZthJC Iav = 2** **T/ [1.3·BV·Zth]** **EAS (AR) = PD (ave)·tav** **Fig 16.** Maximum Avalanche Energy vs. Temperature 2017-09-18 7 ~~Cinfineon~~ AUIRF1404 ~~[~~ **Fig 17.** Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs 8 2017-09-18 AUIRF1404 ~~LLL~~ ## ~~Cinfin eon~~ **TO-220AB Package Outline** (Dimensions are shown in millimeters (inches)) ## **TO-220AB Part Marking Information** **==> picture [331 x 148] intentionally omitted <==** **----- Start of picture text -----**<br> Part Number AUIRF1404<br>Date Code<br>IR Logo T éaR YWWA Y= Year<br>WW= Work Week<br><br>XX XX<br>a<br>Lot Code<br>**----- End of picture text -----**<br> TO-220AB package is not recommended for Surface Mount Application. 9 2017-09-18 |**Qualification Information**|**Qualification Information**||| |---|---|---|---| |**Qualification Level**||Automotive<br>(per AEC-Q101)|| |||Comments: This part number(s) passed Automotive qualification. Infineon’s<br>Industrial and Consumer qualification level is granted by extension of the higher<br>Automotive level.|| |**Moisture Sensitivity Level**||TO-220AB|N/A| |**ESD**|Machine Model|Class M4 (+/- 425V)† <br>AEC-Q101-002|| ||Human Body Model|Class H2 (+/- 4000V)† <br>AEC-Q101-001|| ||Charged Device Model|Class C5 (+/- 1125V)† <br>AEC-Q101-005|| |**RoHS Compliant**||Yes|| † Highest passing voltage. ## **Revision History** |**Date**|||**Comments**| |---|---|---|---| |||Updated datasheet with corporate template.|| |9/30/2015||Corrected typo on IDSS test condition on page 2.|| |||Updated Package outline onpage 9.|| |9/18/2017||Corrected typo error on part marking on page 9.|Corrected typo error on part marking on page 9.| **Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2015 All Rights Reserved.** ## **IMPORTANT NOTICE** The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office (www.infineon.com). ## **WARNINGS** Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 10 2017-09-18
Updated at March 12, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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