AUIRF1324S-7P
Power MOSFET, N Channel, 24 V, 429 A, 1000 µohm, TO-263 (D2PAK), Surface Mount
- Manufacturer: INFINEON
- Product type: Single MOSFETs
- Transistor Polarity:N Channel; Continuous Drain Current Id:429A; Drain Source Voltage Vds:24V; On Resistance Rds(on):800µohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power D
- MSL: MSL 1 - Unlimited
- No. of Pins: 7Pins
- Channel Type: N Channel
- Product Range: -
- Qualification: AEC-Q101
- Power Dissipation: 300W
- Transistor Mounting: Surface Mount
- Rds(on) Test Voltage: 10V
- Transistor Case Style: TO-263 (D2PAK)
- Drain Source Voltage Vds: 24V
- Operating Temperature Max: 175°C
- Continuous Drain Current Id: 429A
- Drain Source On State Resistance: 1000µohm
- Gate Source Threshold Voltage Max: 2V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 1.79 € |
| Current stock | 10+ |
| Lead time | 30 days |
**AUTOMOTIVE GRADE**
## ~~Cinfin eon~~
## AUIRF1324S-7P ~~—~~
## **Features**
**VDSS 24V** Advanced Process Technology Ultra Low On-Resistance **RDS(on) typ. 0.8m** 175°C Operating Temperature **max. 1.0m** Fast Switching **ID (Silicon Limited) 429A** Repetitive Avalanche Allowed up to Tjmax **ID (Package Limited) 240A** Lead-Free, RoHS Compliant Automotive Qualified * **Description** Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast S (Pin 2, 3, 5, 6, 7) D[2] Pak 7 Pin switching speed and improved repetitive avalanche rating. These G (Pin 1) features combine to make this design an extremely efficient and G D S reliable device for use in Automotive applications and wide variety of other applications. Gate Drain Source ~~——}—_}~~ **Standard Pack Base Part Number Package Type Orderable Part Number Form Quantity** AUIRF1324S-7P D[2] Pak 7 Pin Tube 50 AUIRF1324S-7P ~~————————— ee~~ **Absolute Maximum Ratings** Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
|**Symbol**<br>~~———~~|**Parameter**<br>~~———~~|**Max.**|**Units**|
|---|---|---|---|
|ID@ TC= 25°C<br>~~———~~|Continuous Drain Current, VGS@ 10V (Silicon Limited)<br>~~———~~|429|A|
|ID @TC= 100°C<br>~~———~~|Continuous Drain Current,VGS @10V(Silicon Limited)<br>~~———~~|303||
|ID@ TC= 25°C<br>~~———~~|Continuous Drain Current, VGS@ 10V (Package Limited)<br>~~———~~|240||
|IDM<br>~~———~~|Pulsed Drain Current<br>~~———~~|1640||
|PD@TC= 25°C<br>~~———~~<br>~~eS~~|Maximum Power Dissipation<br>~~———~~<br>~~eS~~|300<br>~~eS~~|W<br>~~eS~~|
|~~eS~~|Linear DeratingFactor<br>~~eS~~|2.0<br>~~eS~~|W/°C<br>~~eS~~|
|VGS|Gate-to-SourceVoltage|± 20|V|
|EAS<br>~~——————————~~|Single Pulse Avalanche Energy (ThermallyLimited) <br>~~——————————~~|230<br>~~——————————~~|mJ<br>~~——————————~~|
|IAR<br>~~——————————~~|Avalanche Current<br>~~——————————~~|See Fig.14,15, 18a, 18b<br>~~——————————~~|A<br>~~——————————~~|
|EAR<br>~~——————————~~|Repetitive Avalanche Energy<br>~~——————————~~||mJ<br>~~——————————~~|
|dv/dt<br>~~——————————~~<br>~~pf~~|Peak Diode Recovery <br>~~——————————~~<br>~~pf~~|1.6<br>~~——————————~~<br>|V/ns<br>~~——————————~~<br>|
|TJ<br>TSTG<br>~~pf~~|Operating Junction and<br>Storage Temperature Range<br>~~pf~~|-55 to + 175<br>|°C<br>|
|~~pf~~|SolderingTemperature,for 10 seconds(1.6mm from case)<br>~~pf~~|300<br>||
|**Thermal Resistance**<br>**Symbol**<br>**Parameter**<br>**Typ.**<br>**Max.**<br>**Units**<br>RJC<br>Junction-to-Case<br>–––<br>0.50<br>°C/W<br>RJA<br>Junction-to-Ambient<br>–––<br>40<br>~~tr_~~|
|---|
|~~tr_~~|
|HEXFET® is a registered trademark of Infineon.|
|1<br>2015-9-30<br>*****Qualification standards can be found atwww.infineon.com<br>~~—_—~~|
AUIRF1324S-7P ~~__L_LL~~
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|Qg<br>~~—~~<br>~~SS~~|TotalGate Charge<br>~~SS~~|–––<br>~~SS~~|180<br>~~SS~~|252<br>~~SS~~|nC<br>~~SSS~~<br>~~a~~|ID= 75A<br>VDS= 12V<br>VGS= 10V<br>~~S~~<br>~~ee~~|
|---|---|---|---|---|---|---|
|g<br>Qgs<br>~~—~~<br>~~SS~~|Gate-to-Source Charge<br>~~SS~~|–––<br>~~SS~~|47<br>~~SS~~|–––<br>~~SS~~|||
|gs<br>Qgd<br>~~= SS~~|Gate-to-DrainCharge<br>~~SS~~|–––<br>~~SS~~|58<br>~~SS~~|–––<br>~~SS~~|||
|gd<br>Qsync<br>~~= SS~~<br>~~es~~|Total Gate Charge Sync.(Qg - Qgd)<br>~~SS~~<br>|–––<br>~~SS~~|122<br>~~SS~~<br>~~a~~|–––<br>~~SS~~<br>~~a~~|||
|td(on)<br>~~= SS~~<br>~~———————~~<br>~~es~~|Turn-On DelayTime<br>~~SS~~<br>~~———————~~<br>|–––<br>~~SS~~<br>~~———————~~|19<br>~~SS~~<br>~~———————~~<br>~~a~~|–––<br>~~SS~~<br>~~———————~~<br>~~a~~|ns<br>~~SSS~~<br>~~———————~~<br>~~a~~|VDD= 16V<br>ID= 160A<br>RG= 2.7<br>VGS= 10V<br>~~S~~<br>~~———————~~<br>~~ee~~|
|d(on)<br>tr<br>~~SS~~<br>~~———————~~<br>~~es~~|RiseTime<br>~~SS~~<br>~~———————~~<br>|–––<br>~~SS~~<br>~~———————~~|240<br>~~SS~~<br>~~———————~~<br>~~a~~|–––<br>~~SS~~<br>~~———————~~<br>~~a~~|||
|td(off)<br>~~———————~~<br>~~es~~|Turn-Off DelayTime<br>~~———————~~<br>|–––<br>~~———————~~|86<br>~~———————~~<br>~~a~~|–––<br>~~———————~~<br>~~a~~|||
|d(off)<br>tf<br>~~———————~~<br>~~es~~|Fall Time<br>~~———————~~<br>|–––<br>~~———————~~|93<br>~~———————~~<br>~~a~~|–––<br>~~———————~~<br>~~a~~|||
|Ciss<br>~~esa~~|Input Capacitance<br>~~a~~|–––|7700<br>~~a~~|–––<br>~~a~~|pF<br>~~a ~~<br>|<br>~~rrr~~<br>~~rs~~|VGS= 0V<br>VDS= 19V<br>ƒ= 1.0MHz, See Fig. 5<br> ~~ee~~|
|Coss<br>~~esa~~|Output Capacitance<br>~~a~~|–––|3380<br>~~a~~|–––<br>~~a~~|||
|Crss<br>~~a~~<br>~~es~~<br>~~ee~~|Reverse Transfer Capacitance<br>~~a~~<br>~~errr~~<br>|–––<br>~~errr~~<br>~~ts~~<br>|1930<br>~~errr~~<br>~~I~~<br>|–––<br>~~errr~~<br>~~r~~<br>|||
|Coss eff.(ER)<br>~~a~~<br>~~es~~<br>~~ee~~|Effective Output Capacitance (Energy Related)<br>~~a~~<br>~~errr~~<br>|–––<br>~~errr~~<br>~~ts~~<br><br>~~ID~~|4780<br>~~errr~~<br>~~I~~<br><br>~~I~~|–––<br>~~errr~~<br>~~r~~<br><br>~~I~~||VGS= 0V, VDS= 0V to 19V|
|Coss eff.(TR)<br>~~a~~<br>~~es~~<br>~~ee~~|Effective Output Capacitance(Time Related)<br>~~a~~<br>~~errr~~<br>~~nS~~|–––<br>~~errr~~<br>~~ts~~<br>~~nS~~<br>~~ID~~|4970<br>~~errr~~<br>~~I~~<br>~~nS~~<br>~~I~~|–––<br>~~errr~~<br>~~r~~<br>~~nS~~<br>~~I~~||VGS= 0V,VDS= 0V to 19V|
|**Diode Characteristics**<br>~~ts I~~<br>~~rrr~~<br>~~ee~~<br>~~ID I~~<br>~~I~~<br>~~rs~~|||||||
|~~$<~~|**Parameter **<br>~~$<~~<br>~~tt~~|**Min.**<br>~~tt~~|**Typ. M**<br>~~tt~~|**. Max.**<br>~~tt~~|**Units**<br>~~tt~~|**Conditions**<br>~~tt~~|
|IS<br>~~a eee~~<br>~~$<~~|Continuous Source Current<br>(BodyDiode)<br>~~eee~~<br>~~$<~~<br>~~tt~~|–––<br>~~tt~~|––– 429<br>~~tt~~|––– 429<br>~~tt~~|A<br>~~tt~~|MOSFET symbol<br>showing the<br>integral reverse<br>p-n junction diode.<br>~~tt~~|
|ISM<br>~~$<~~<br>~~Rs~~|Pulsed Source Current<br>(Body Diode)<br>~~$<~~<br>~~tt~~<br>~~ID~~|–––<br>~~tt~~<br>~~QR~~|–––<br>~~tt~~<br>~~(OU~~|1640<br>~~tt~~|||
|VSD<br>~~$<~~<br>~~Rs~~|DiodeForwardVoltage<br>~~$<~~<br>~~tt~~<br>~~ID~~|–––<br>~~tt~~<br>~~QR~~<br>~~ee~~|–––<br>~~tt~~<br>~~(OU~~<br>~~eee~~|1.3<br>~~tt~~<br>~~eee~~|V<br>~~tt~~<br>~~eee~~|TJ= 25°C,IS= 160A,VGS=0V<br>~~tt~~<br>~~eee~~|
|trr<br>~~Rs~~<br>~~a e~~|Reverse Recovery Time<br>~~ID ~~<br>~~ee~~|–––<br> ~~QR~~<br>~~e~~<br>~~ee~~|71<br>~~(OU~~<br>~~e~~<br>~~eee~~|107<br>~~e~~<br>~~eee~~|ns<br>~~e~~<br>~~eee~~|TJ =25°CVDD= 20V<br>TJ =125°CIF= 160A,<br>TJ =25°Cdi/dt = 100A/µs<br>TJ =125°C <br>TJ= 25°C<br>~~eee~~<br>~~(~~|
|||–––<br>~~e~~<br>~~ee~~|74<br>~~e~~<br>~~eee~~|110<br>~~e~~<br>~~eee~~|||
|Qrr<br>~~a e~~<br>~~ee~~|Reverse Recovery Charge<br>~~ee~~<br>~~ee~~|–––<br>~~e~~<br>~~ee ~~<br>~~ee~~|83<br>~~e~~<br> ~~eee~~<br>~~ee~~|120<br>~~e~~<br>~~eee~~<br>~~ee~~|nC<br>~~e~~<br>~~eee~~<br>~~ee~~||
|||–––<br>~~ee~~|92<br>~~ee~~|140<br>~~ee~~|||
|IRRM<br>~~ee~~<br>~~es~~|ReverseRecovery Current<br>~~ee~~<br>~~I~~|–––<br>~~ee~~<br>~~(~~|2.0<br>~~ee~~<br>~~(~~|–––<br>~~ee~~<br>~~(~~|A<br>~~ee~~<br>~~(~~||
|ton<br>~~es~~|Forward Turn-On Time<br>~~I~~|Intrinsic turn-on time is negligible(turn-on is dominated byLS+LD)<br>~~(~~|||||
**Notes:**
- Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 240A. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements.
> Repetitive rating; pulse width limited by max. junction temperature.
- Limited by TJmax, starting TJ = 25°C, L = 0.018mH, RG = 25, IAS = 160A, VGS =10V. Part not recommended for use above this value.
- ISD 160A, di/dt 600A/µs, VDD V(BR)DSS, TJ 175°C.
- Pulse width 400µs; duty cycle 2%.
- Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
- Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS.
- When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994
- R is measured at TJ approximately 90°C.
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AUIRF1324S-7P
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1000<br>1000<br>VGS<br>Vl TOP VGS15V TOP 15V 10V<br>10V 8.0V<br>8.0V 6.0V<br>6.0V 5.5V<br>5.5V 5.0V<br>5.0V 4.8V<br>4.8V BOTTOM 4.5V<br>BOTTOM 4.5V<br>100<br>100<br>4.5V<br>4.5V 60µs PULSE WIDTH<br>60µs PULSE WIDTH Tj = 175°C<br>10 Paani Tj = 25°C 10<br>0.1 1 10 100<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>VDS, Drain-to-Source Voltage (V)<br>Fig. 1 Typical Output Characteristics Fig. 2 Typical Output Characteristics<br>1.8<br>1000 ID = 160A<br>1.6 V GS = 10V<br>100 TAT TJ = 175°C 1.4 TT<br>1.2<br>10<br>nv/GnnE TJ = 25°C Pa<br>1.0<br>1<br>rity Cette<br>0.8<br>VDS = 15V<br>60µs PULSE WIDTH<br>0.6<br>0.1<br>2 ieanan 3 4 5 6 7 8 9 -60 eet -40 -20 0 20 40 60 80 100 120 140160 180<br>TJ , Junction Temperature (°C)<br>VGS, Gate-to-Source Voltage (V)<br>Fig. 3 Typical Transfer Characteristics Fig. 4 Normalized On-Resistance vs. Temperature<br>100000<br>VGS = 0V, f = 1 MHZ 12.0<br>Ciss = Cgs + Cgd, Cds SHORTED ID= 75A<br>—) C Crss oss = C = Cds gd + Cgd 10.0 FTG V DS = 19V<br>VDS= 12V<br>8.0<br>10000 Ciss<br>AU | AI 6.0 ¥<br>Coss<br>C rss 4.0<br>2.0<br>S| ZS<br>1000 Him Ana<br>0.0<br>1 10 100<br>0 50 100 150 200<br>VDS, Drain-to-Source Voltage (V)<br> QG, Total Gate Charge (nC)<br>ID, Drain-to-Source Current (A)<br>ID, Drain-to-Source Current (A)<br>RDS(on) , Drain-to-Source On Resistance (Normalized)<br>VGS, Gate-to-Source Voltage (V)<br>C, Capacitance (pF)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>
**Fig. 2** Typical Output Characteristics
**Fig. 4** Normalized On-Resistance vs. Temperature
**Fig 5.** Typical Capacitance vs. Drain-to-Source Voltage
**Fig 6.** Typical Gate Charge vs. Gate-to-Source Voltage
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1000 10000<br>OPERATION IN THIS AREA<br>LIMITED BY RDS(on)<br>T J = 175°C 1000<br>100 ia Se 100µsec<br>1msec<br>/ 100 reali<br>ls<br>T J = 25°C 10msec<br>10<br>10<br>Tc = 25°C DC<br>V GS = 0V Tj = 175°CSingle Pulse<br>1.0 1<br>0.0 0.5 1.0 1.5 2.0 2.5 0 1 10 100<br>VSD, Source-to-Drain Voltage (V) VDS, Drain-to-Source Voltage (V)<br>Fig. 7 Typical Source-to-Drain Diode Fig 8. Maximum Safe Operating Area<br> Forward Voltage<br>450 32<br>Id = 5mA<br>400 31<br>Limited By Package<br>350 af {| | |] 30 y) ae<br>PA COTE<br>300<br>29<br>250 ae ERRRRREDZ<br>28<br>eee Am<br>200<br>27<br>150 NEE SRSEEED A000<br>26<br>a SERSP2G0R0EE<br>100<br>ee<br>25<br>50 TEENS EP 2Gnnnnne<br>24 EET ET YL<br>0 P| | tT | TN PLETE<br>-60 -40 -20 0 20 40 60 80 100 120 140160 180<br>25 50 75 100 125 150 175<br>TJ , Temperature ( °C )<br> TC , Case Temperature (°C)<br>Maximum Drain Current vs. Case Temperature Fig 10. Drain-to-Source Breakdown Voltage<br>1.4 1000<br>EERE ID<br>900<br>1.2 NESE TOP 45A<br>800 80A<br>1.0 BOTTOM 160A<br>700<br>Rane<br>0.8 600 BENGE<br>500<br>0.6<br>400 KEENE ETT<br>0.4 300 BNERNEREEE<br>SESNRNEREE<br>200<br>0.2 100 PES EAN TTT<br>0.0 Hey EKG<br>0 PEt TT) [ES]<br>-5 0 5 10 15 20 25<br>25 50 75 100 125 150 175<br>VDS, Drain-to-Source Voltage (V) Starting TJ , Junction Temperature (°C)<br>EAS , Single Pulse Avalanche Energy (mJ)<br>ISD, Reverse Drain Current (A)<br>V(BR)DSS, Drain-to-Source Breakdown Voltage (V)<br>Energy (µJ)<br>ID, Drain Current (A)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>
**Fig 8.** Maximum Safe Operating Area
**Fig 9.** Maximum Drain Current vs. Case Temperature
**Fig 10.** Drain-to-Source Breakdown Voltage
**Fig 11.** Typical COSS Stored Energy
**Fig 12.** Maximum Avalanche Energy vs. Drain Current
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AUIRF1324S-7P ~~__L_LL~~
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1<br>TT TL LL oe<br>D = 0.50<br>IC rT | LI<br>0.1 Sa 0.200.10 R 1 R1 R 2 R2 R 3 R3 R 4 R4 Ri (°C/W) I (sec)<br>ST 0.02 0.05 ey J J 1 1 2 2 3 3 4 4 C C 0.02070 0.08624 0.000010 0.000070<br>0.01 0.01 Ci= iRi 0.24491 0.001406<br>Ci= iRi<br>= eat PT<br>0.15005 0.009080<br>SINGLE PULSE Notes:<br>( THERMAL RESPONSE ) 1. Duty Factor D = t1/t2<br>2. Peak Tj = P dm x Zthjc + Tc<br>0.001 Al ll eT<br>1E-006 1E-005 0.0001 0.001 0.01 0.1<br>t1 , Rectangular Pulse Duration (sec)<br>Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case<br>1000<br>Duty Cycle = Single Pulse<br>Allowed avalanche Current vs avalanche<br>pulsewidth, tav, assuming Tj = 150°C and<br>100 ee 0.01 Tstart =25°C (Single Pulse)<br>0.05<br>SSR<br>0.10<br>a<br>10 IRSs coo<br>Allowed avalanche Current vs avalanche<br>pulsewidth, tav, assuming j = 25°C and<br>Tstart = 150°C.<br>1 Seusseacaa_ mil inantCorae<br>1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01<br>tav (sec)<br>Avalanche Current (A)<br>Thermal Response ( Z thJC ) °C/W<br>**----- End of picture text -----**<br>
**Fig 14.** Avalanche Current vs. Pulse width
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AUIRF1324S-7P ~~__L_LL~~
## ~~Cinfineon~~
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250<br>TOP Single Pulse<br>BOTTOM 1.0% Duty Cycle<br>200 I D = 160A<br>wT<br>150<br>AST<br>100<br>TNE<br>50<br>NG<br>ELLEN<br>0<br>25 50 75 100 125 150 175<br>Starting TJ , Junction Temperature (°C)<br>EAR , Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>
## **Notes on Repetitive Avalanche Curves , Figures 14, 15:**
**(For further info, see AN-1005 at www.infineon.com)**
1. Avalanche failures assumption:
- Purely a thermal phenomenon and failure occurs at a temperature far in
- excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long as Tjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 18a, 18b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 13, 14).
- tav = Average time in avalanche.
- D = Duty cycle in avalanche = tav ·f
- ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
**PD (ave) = 1/2 ( 1.3·BV·Iav) =** **T/ ZthJC Iav = 2** **T/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav**
**Fig 15.** Maximum Avalanche Energy vs. Temperature
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4.5<br>4.0 THOTT<br>3.5 EPSRC<br>3.0 PRA<br>ID = 250µA<br>2.5 ID = 1.0mA<br>ID = 1.0A<br>PERNTBERNSEE<br>2.0<br>[LLEEEL NS<br>1.5<br>COCR<br>1.0 N<br>-75 -50 -25 0 25 50 75 100 125 150 175 200<br>TJ , Temperature ( °C )<br>VGS(th), Gate threshold Voltage (V)<br>**----- End of picture text -----**<br>
**Fig 16.** Threshold Voltage vs. Temperature
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~~Cinfir~~
AUIRF1324S-7P ~~_~~
**Fig 17.** Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
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15V<br>L DRIVER<br>VDS<br>R G D.U.T +<br>- [V][DD]<br>20V JL IAS<br>ae tp Y 0.01<br>**----- End of picture text -----**<br>
**Fig 18a.** Unclamped Inductive Test Circuit
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**----- Start of picture text -----**<br>
V(BR)DSS<br>tp ><br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
IAS<br>**----- End of picture text -----**<br>
**Fig 18b.** Unclamped Inductive Waveforms
**Fig 19a.** Switching Time Test Circuit
**Fig 19b.** Switching Time Waveforms
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Vds Hi Id<br>Vgs<br>I<br>|<br>Vgs(th) !! ['] t<br>i t<br>A :<br>Qgs1 Qgs2 Qgd Qgodr<br>**----- End of picture text -----**<br>
**Fig 20a.** Gate Charge Test Circuit
**Fig 20b.** Gate Charge Waveform
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AUIRF1324S-7P ~~__L_LL~~
## ~~Cinfin eon~~
## **D[2] Pak - 7 Pin Package Outline** (Dimensions are shown in millimeters (inches))
## **D[2] Pak - 7 Pin Part Marking Information**
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Part Number AUF1324S-7P<br>Date Code<br>IR Logo T é4R YWWA Y= Year<br>WW= Work Week<br><br>XX XX<br>[|<br>Lot Code<br>**----- End of picture text -----**<br>
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AUIRF1324S-7P ~~“e_»&»«=«=5=$FDEee°°»~~ **Qualification Information**
|**Qualification Information**|**Qualification Information**|||
|---|---|---|---|
|**Qualification Level**||Automotive<br>(per AEC-Q101)||
|||Comments: This part number(s) passed Automotive qualification. Infineon’s<br>Industrial and Consumer qualification level is granted by extension of the higher<br>Automotive level.||
|**Moisture Sensitivity Level**||D2-Pak 7 Pin|MSL1|
|**ESD**|Machine Model|Class M4† <br>AEC-Q101-002||
||Human Body Model|Class H3A† <br>AEC-Q101-001||
||Charged Device Model|Class C3† <br>AEC-Q101-005||
|**RoHS Compliant**||Yes||
- Highest passing voltage.
## **Revision History**
|**Date**|||**Comments**|
|---|---|---|---|
|||Updated datasheet with corporate template||
|9/30/2015||Corrected ordering table on page 1.||
|||Updated typo on GFS onpage 2.||
**Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2015 All Rights Reserved.**
## **IMPORTANT NOTICE**
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office (www.infineon.com).
## **WARNINGS**
Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
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2015-9-30
Updated at March 10, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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