AUIRF1010Z

AUIRF1010Z AUIRF1010ZS AUIRF1010ZL ~~a~~ 

**AUTOMOTIVE GRADE** 

## ~~Cinfin eon~~ 

HEXFET[® ] Power MOSFET 

## **Features** 

- Advanced Process Technology 

|**Features**<br> Advanced Process TechnologyAdvanced Process Technology||||||HEXFET[® ]Power MOSFET|Power MOSFET|
|---|---|---|---|---|---|---|---|
| Advanced Process TechnologyAdvanced Process Technology<br>Ultra Low On-Resistance||||**VDSS**||**55V**||
|175°C Operating Temperature||||**RDS(on)   max.**||**max.**<br>**7.5m**||
|Fast Switching<br>Repetitive Avalanche Allowed up to Tjmax<br>Lead-Free, RoHS Compliant||||**ID (Silicon Limited)**<br>**94A**<br>**ID (Package Limited)**<br>**75A**||||
|Automotive Qualified *||||||||
|**Description**||||||D<br>D||
|Specifically designed for Automotive applications, this HEXFET®<br>Power MOSFET utilizes the latest processing techniques to<br>achieve extremely low on-resistance per silicon area.  Additional||||S<br>D<br>G||S<br>G<br>S<br>GD||
|features of this design  are a 175°C junction operating temperature,<br>fast switching speed and improved repetitive avalanche rating .<br>These features combine to make this design an extremely efficient||||TO-220AB<br>AUIRF1010Z||D2Pak<br>AUIRF1010ZS<br>TO-262<br>AUIRF1010ZL||
|and reliable device for use in Automotive applications and a wide<br>variety of other applications.||**G**<br>**D**<br>**S**<br>Gate<br>Drain<br>Source<br>~~-——+——_}—~~||||||
|**Base part number**<br>**Package Type**<br>**Standard Pack**<br>**Form**||||**Standard Pack**<br>**Quantity**||**Orderable Part Number**||
|AUIRF1010Z<br>TO-220<br>Tube||||50||AUIRF1010Z||
|AUIRF1010ZL<br>TO-262<br>Tube||||50||AUIRF1010ZL||
|AUIRF1010ZS<br>D2-Pak<br>Tube<br>Tape andReel Left||||50<br>800||AUIRF1010ZS<br>AUIRF1010ZSTRL||



## **Description** 

## **Absolute Maximum Ratings** 

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.   These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified. 

|otherwise specified.pecified.ecified.<br>~~es~~||||
|---|---|---|---|
|**Symbol**<br>~~es~~<br>~~———————~~|**Parameter**<br>~~———————~~|**Max.**<br>~~ae~~|**Units**<br>~~ae~~|
|ID@ TC= 25°C<br>~~es~~<br>~~———————~~|Continuous Drain Current, VGS@ 10V (Silicon Limited)<br>~~———————~~|94<br>~~ae~~|A<br>~~ae~~|
|ID @TC= 100°C<br>~~———————~~|Continuous Drain Current,VGS @10V(Silicon Limited)<br>~~———————~~|66<br>~~ae~~||
|ID@ TC= 25°C<br>~~———————~~|Continuous Drain Current, VGS@ 10V (Package Limited)<br>~~———————~~|75<br>~~ae~~||
|IDM<br>~~———————~~|Pulsed Drain Current<br>~~———————~~|360<br>~~ae~~||
|PD@TC= 25°C<br>~~———————~~<br>~~a~~|Maximum Power Dissipation<br>~~———————~~<br>~~a~~|140<br>~~ae~~<br>~~a~~|W<br>~~ae~~<br>~~a~~|
|~~a~~|Linear DeratingFactor<br>~~a~~|0.90<br>~~a~~|W/°C<br>~~a~~|
|VGS<br>~~a~~|Gate-to-SourceVoltage<br>~~a~~|± 20<br>~~a~~|V<br>~~a~~|
|EAS<br>~~a~~<br>~~—~~|Single Pulse Avalanche Energy (ThermallyLimited) <br>~~a~~<br>~~—~~|130<br>~~a~~<br>~~—~~|mJ<br>~~a~~<br>~~—~~|
|EAS(tested)<br>~~—~~|Single Pulse Avalanche EnergyTested Value<br>~~—~~|180<br>~~—~~||
|IAR<br>~~a~~|Avalanche Current<br>~~a~~|See Fig.15,16, 12a, 12b<br>~~a~~<br>~~ee~~<br>~~ee~~|A<br>~~a~~|
|EAR<br>~~a~~<br>~~ee~~|Repetitive Avalanche Energy <br>~~a~~<br>~~ee~~||mJ<br>~~a~~<br>~~ee~~|
|TJ<br>TSTG<br>~~ee~~|Operating Junction and<br>Storage Temperature Range<br>~~ee~~|-55  to + 175<br>~~ee~~<br>~~ee~~|°C<br>~~ee~~|
|~~ee~~|SolderingTemperature,for 10 seconds(1.6mm from case)<br>~~ee~~|300<br>~~ee~~<br>~~ee~~||
|~~ee~~|Mountingtorque,6-32 or M3 screw<br>~~ee~~|10 lbf•in(1.1N•m)<br> <br>~~ee~~<br>~~ee~~|~~ee~~|



HEXFET® is a registered trademark of Infineon. 

***** Qualification standards can be found at www.infineon.com 

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**Static @ TJ = 25°C (unless otherwise specified)** 

|Qg<br>~~**a**~~|Total Gate Charge|–––|63|95|nC<br>~~Pf~~|ID= 75A<br>VDS= 44V<br>VGS= 10V<br>~~Pf~~|
|---|---|---|---|---|---|---|
|g<br>Qgs<br>~~**a**~~|Gate-to-Source Charge|–––|19|–––|||
|Qgd<br>~~**a**~~<br>~~a~~|Gate-to-Drain Charge|–––|24|–––|||
|gd<br>td(on)<br>~~a~~|Turn-On Delay Time|–––|18|–––|ns|VDD= 28V<br>ID= 75A<br>RG= 6.8<br>VGS= 10V<br>~~gh~~|
|d(on)<br>tr<br>~~a~~<br>~~ee~~|Rise Time|–––|150|–––|||
|td(off)<br>~~ee~~<br>~~ee~~|Turn-Off DelayTime<br>~~en~~|–––<br>~~en~~|36<br>~~en~~|–––<br>~~en~~|||
|d(off)<br>tf<br>~~ee~~<br>~~ee~~<br>~~fj~~|Fall Time<br>~~en~~<br>~~fj~~|–––<br>~~en~~|92<br>~~en~~|–––<br>~~en~~|||
|LD<br>~~ee~~<br>~~fj~~|Internal Drain Inductance<br>~~en~~<br>~~fj~~|–––<br>~~en~~|4.5<br>~~en~~|–––<br>~~en~~|nH<br>~~re~~|Between lead,<br>6mm (0.25in.)<br>from package<br>and center of die contact<br>~~gh~~|
|LS<br>~~fj~~<br>~~e~~|Internal Source Inductance<br>~~fj~~|–––<br>~~re~~|7.5<br>~~re~~|–––<br>~~re~~|||
|Ciss<br>~~fj~~<br>~~e~~<br>~~**ee**~~|Input Capacitance<br>~~fj~~|–––<br>~~re~~|2840<br>~~re~~|–––<br>~~re~~|pF<br>~~re~~<br>~~-~~|VGS= 0V<br>VDS= 25V<br>ƒ= 1.0MHz,See Fig. 5<br>~~gh~~<br>~~**PO**~~|
|Coss<br>~~e~~<br>~~**ee**~~|OutputCapacitance|–––<br>~~re~~|420<br>~~re~~|–––<br>~~re~~|||
|Crss<br>~~**e**~~<br>~~e~~<br>~~**ee**~~|ReverseTransferCapacitance<br>~~**e**s~~|–––<br>~~s~~<br>~~re~~|250<br>~~s~~<br>~~re~~|–––<br>~~s~~<br>~~re~~|||
|Coss<br>~~e~~<br>~~**ee**~~<br>~~ee~~|OutputCapacitance|–––<br>~~re~~|1630<br>~~re~~|–––<br>~~re~~||VGS=0V,VDS= 1.0Vƒ= 1.0MHz<br>~~**PO**~~<br>~~Po~~|
|Coss<br>~~**ee**~~<br>~~ee~~|Output Capacitance|–––|360|–––||VGS =0V, VDS =44V ƒ=1.0MHz<br>~~**PO**~~<br>~~Po~~|
|Coss eff.<br>~~**ee**~~<br>~~ee~~|Effective Output Capacitance|–––|560|–––||VGS= 0V,VDS= 0V to 44V<br>~~**PO**~~<br>~~Po~~|
|**Diode Characteristics**<br>~~-~~<br>~~**ee**~~<br>~~**PO**~~<br>~~po~~|||||||
|~~po~~|**Parameter **<br>|**Min.**<br>|**Typ. M**<br>|**. Max.**<br>|**Units**<br>|**Conditions**|
|IS<br>~~po++)~~|Continuous Source Current<br>(Body Diode)<br>~~++)~~|–––<br>~~++)~~|–––<br>~~++)~~|75<br>~~++)~~|A<br>~~++)~~<br>~~I~~|MOSFET symbol<br>showing  the<br>integral reverse<br>p-n junction diode.|
|ISM<br>~~++)~~<br>~~ee~~|Pulsed Source Current<br>(Body Diode)<br>~~++)~~<br>~~I~~|–––<br>~~++)~~<br>~~ID~~|–––<br>~~++)~~<br>~~sO~~|360<br>~~++)~~<br>~~sO~~|||
|VSD<br>~~++)~~<br>~~ee~~|Diode Forward Voltage<br>~~++)~~<br>~~I~~|–––<br>~~++)~~<br>~~ID~~|–––<br>~~++)~~<br>~~sO~~|1.3<br>~~++)~~<br>~~sO~~|V<br>~~++)~~<br>~~I~~|TJ =25°C,IS=75A,VGS =0V|
|trr<br>~~ee~~<br>~~eee~~|Reverse Recovery Time<br>~~I ~~<br>~~eee~~|–––<br> ~~ID ~~<br>~~eee~~|22<br> ~~sO~~<br>~~eee~~|33<br>~~sO~~<br>~~eee~~|ns<br>~~I~~<br>~~eee~~|TJ= 25°C ,IF= 75A, VDD= 25V<br>nC   di/dt = 100A/µs<br>~~eee~~|
|Qrr<br>~~eee~~|Reverse RecoveryCharge<br>~~eee~~|–––<br>~~eee~~|15<br>~~eee~~|23<br>~~eee~~|nC   di/dt = 100A/<br>~~eee~~||
|ton<br>~~a~~|Forward Turn-On Time|Intrinsic turn-on time is negligible(turn-on is dominated byLS+LD)|||||



## **Notes:** 

>  Repetitive rating;  pulse width limited by max. junction temperature. (See fig. 11) 

-  Limited by TJmax, starting  TJ = 25°C, L = 0.05mH, RG = 25, IAS = 75A, VGS =10V. Part not recommended for use above this value.  Pulse width 1.0ms; duty cycle  2%. 

-  Coss eff.  is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. 

- Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. 

-  This value determined from sample failure population, starting TJ = 25°C, L = 0.05mH, RG = 25, IAS = 75A, VGS =10V. 

-  This is only applied to TO-220AB package. 

-  When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994 

-  R is measured at TJ approximately 90°C. 

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1000<br>VGS<br> TOP          15V<br>                   10V<br>                 8.0V<br>                   7.0V<br>                   6.0V<br>                   5.5V<br>100                    5.0V  BOTTOM  4.5V<br>muy<br>aSenneSenne<br>10<br>a<br>4.5V<br>20µs PULSE WIDTH<br>1 Ou | Sl Tj = 25°C<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


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1000<br>VGS  VGS<br> TOP          15V   TOP          15V<br>                   10V                     10V<br>                 8.0V                   8.0V<br>                   7.0V                     7.0V<br>                   6.0V                     6.0V<br>                   5.5V                     5.5V<br>100                    5.0V  BOTTOM  4.5V                     5.0V  BOTTOM  4.5V<br>muy q<br>aSenneSenne 100 ya<br>10<br>a VA<br>4.5V<br>20µs PULSE WIDTH 4.5V 20µs PULSE WIDTH<br>1 Ou | Sl Tj = 25°C 10 FefritUf Tj = 175°C<br>0.1 1 10 100 0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)<br>Fig. 1  Typical Output Characteristics  Fig. 2  Typical Output Characteristics<br>100<br>1000<br>TJ = 25°C == 80 n= TJ = 175°C<br>TJ = 175°C<br>100<br>60<br>eet] ee TJ = 25°C<br>40<br>10 PAGnae SJL<br>20<br>: Yo<br>VDS = 10V<br>VDS = 25V 20µs PULSE WIDTH<br>20µs PULSE WIDTH 0<br>1 ALPE. Ann<br>0 20 40 60 80<br>4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0<br>ID, Drain-to-Source Current (A)<br>VGS, Gate-to-Source Voltage (V)<br>Gfs, Forward Transconductance (S)<br>ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A)<br>A)<br><br>ID, Drain-to-Source Current<br>**----- End of picture text -----**<br>


**Fig. 3** Typical Transfer Characteristics 

**Fig. 4** Typical Forward Trans conductance vs. Drain Current 

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5000 VCGS  iss    = C = 0V,       f = 1 MHZgs  + Cgd,  C ds SHORTED 20 ID= 75A<br>V = 44V<br>4000 CCrss  oss   = C= Cds gd + Cgd 16 VDS= 28V DS<br>3000 ‘Jo Ciss 12 Hp) By<br>2000 pow fas 8 aa a<br>GUI ml a 4n<br>1000 4<br>Coss<br>SS v—4nn<br>Crss<br>0 ASCOT 0 Zn<br>1 10 100 0 20 40 60 80 100<br>VDS, Drain-to-Source Voltage (V)  QG  Total Gate Charge (nC)<br>Fig 5.  Typical Capacitance vs.   Fig 6.  Typical Gate Charge vs.<br>      Drain-to-Source Voltage       Gate-to-Source Voltage<br>1000.0 10000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br>1000<br>100.0<br>TJ = 175°CJ = 175°C= 175°C<br>100<br>ee=_=_ =ear Sareea—_<br>10.0 100µsec<br>TJ = 25°CJ = 25°C= 25°C 10<br>1msec<br>1.0<br>fp 1 Se 20<br>Tc = 25°C 10msec<br>Tj = 175°C<br>0.1 Pp VGS = 0VGS = 0V= 0V 0.1 Mi Single Pulse  a2MEE<br>0.2 0.6 1.0 1.4 1.8 1 10 100 1000<br>VSD, Source-toDrain Voltage (V) VDS  , Drain-toSource Voltage (V)<br>ISD, Reverse Drain Current (A) ID,  Drain-to-Source Current (A)<br>VGS, Gate-to-Source Voltage (V)<br>C, Capacitance (pF)<br>**----- End of picture text -----**<br>


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1000.0<br>100.0<br>TJ = 175°CJ = 175°C= 175°C<br>ee=_=_<br>10.0<br>TJ = 25°CJ = 25°C= 25°C<br>1.0<br>fp<br>Pp VGS = 0VGS = 0V= 0V<br>0.1<br>0.2 0.6 1.0 1.4 1.8<br>VSD, Source-toDrain Voltage (V)<br>ISD, Reverse Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig. 7** Typical Source-to-Drain Diode Forward Voltage 

**Fig 8.** Maximum Safe Operating Area 

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100<br>LIMITED BY PACKAGE<br>80<br>ceeee<br>60<br>40 eT LIN |.<br>20 ett LIN.<br>0 PT tT LIA)<br>25 50 75 100 125 150 175<br> TC , Case Temperature (°C)<br>ID , Drain Current (A)<br>**----- End of picture text -----**<br>


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2.5<br>ID = 75A<br>V GS  = 10V<br>2.0 PeLLELLELL<br>1.5<br>TTTA<br>1.0<br>ALLEae<br>0.5 elT<br>-60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>TJ , Junction Temperature (°C)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>**----- End of picture text -----**<br>


**Fig 9.** Maximum Drain Current vs. Case Temperature 

**Fig 10.** Normalized On-Resistance vs. Temperature 

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10<br>1<br>TMT D = 0.50 =TT<br>0.20<br>0.1 0.050.10 — oo _-<br>0.02 Bae mallalll<br>0.01<br>0.01 ae HE A<br>SINGLE PULSE Notes:<br>( THERMAL RESPONSE ) 1. Duty Factor D = t1/t2<br>2. Peak Tj = P dm x Zthjc + Tc<br>0.001 = iat att EOL<br>1E-006 1E-005 0.0001 0.001 0.01 0.1<br>t1 , Rectangular Pulse Duration (sec)<br>Fig 11.   Maximum Effective Transient Thermal Impedance, Junction-to-Case<br>Thermal Response ( Z  thJC )<br>**----- End of picture text -----**<br>


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15V<br>L DRIVER<br>VDS<br>R G D.U.T +<br>- [V][DD]<br>IAS A<br>20V<br>tp 0.01<br>Fig 12a.   Unclamped Inductive Test Circuit<br>a —<br>V(BR)DSS<br>tp ><br>IAS <4 .<br>**----- End of picture text -----**<br>


**Fig 12b.** Unclamped Inductive Waveforms 

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Id<br>Vds<br>Vgs<br>Vgs(th)<br>Qgs1 Qgs2 Qgd Qgodr<br>**----- End of picture text -----**<br>


**Fig 13a.** Gate Charge Waveform 

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250<br>               ID<br> TOP            31A<br>                     53A<br>200150 TinKun BOTTOM     75A<br>100<br>50<br>PSS<br>0<br>25 50 75 100 125 150 175<br>Starting TJ, Junction Temperature (°C)<br>Fig 12c.  Maximum Avalanche Energy<br> vs. Drain Current<br>-t | ISNO<br>4.0<br>ID = 250µA<br>3.0<br>2.0<br>1.0<br>-75 -50 -25 0 25 50 75 100 125 150 175<br>TJ , Temperature ( °C )<br>VGS(th) Gate threshold Voltage (V)<br>EAS, Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 14.** Threshold Voltage vs. Temperature 

**Fig 13b.** Gate Charge Test Circuit 

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## ~~————————————————~~ 

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1000<br>Duty Cycle = Single Pulse<br>Allowed avalanche Current vs<br>100 CeerE avalanche  pulsewidth,  tav<br>0.01 assuming   Tj  = 25°C due to<br>avalanche losses. Note: In no<br>sitarau | case should Tj be allowed to<br>10 0.05 AT| exceed Tjmax |<br>0.10<br>A<br>1<br>aa<br>0.1<br>1.0E-08 Cae 1.0E-07 1.0E-06 1.0E-05 ree 1.0E-04 1.0E-03 TT 1.0E-02 1.0E-01<br>tav (sec)<br>Avalanche Current (A)<br>**----- End of picture text -----**<br>


**Fig 15.** Typical Avalanche Current vs. Pulse width 

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140<br>TOP          Single Pulse<br>120 BOTTOM   10% Duty Cycle<br>ID = 75A<br>NUL<br>100<br>AU IL<br>80 PNET EEE<br>60<br>PLEIN EEE<br>40<br>20 LPNLEE EENTT<br>PEEL<br>0 TE PAK<br>25 50 75 100 125 150 175<br>Starting TJ , Junction Temperature (°C)<br>EAR , Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.infineon.com)** 

1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 

2. Safe operation in Avalanche is allowed as long as Tjmax is not exceeded. 

3.  Equation below based on circuit and waveforms shown in Figures 12a, 12b. 

4.  PD (ave) = Average power dissipation per single avalanche pulse. 

5.  BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 

6.  Iav = Allowable avalanche current. 

7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 15, 16). 

   - tav = Average time in avalanche. 

   - D = Duty cycle in avalanche =  tav ·f 

   - ZthJC(D, tav) = Transient thermal resistance, see Figures 13) 

**PD (ave) = 1/2 ( 1.3·BV·Iav) =**  **T/ ZthJC Iav = 2**  **T/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav** 

**Fig 16.** Maximum Avalanche Energy vs. Temperature 

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**Fig 17.** Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs 

**Fig 18a.** Switching Time Test Circuit 

**Fig 18b.** Switching Time Waveforms 

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**TO-220AB Package Outline** (Dimensions are shown in millimeters (inches)) 

## **TO-220AB Part Marking Information** 

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Part Number  AUIRF1010Z<br>Date Code<br>IR Logo  T éaR YWWA  Y= Year<br>WW= Work Week<br><br>XX         XX<br>a<br>Lot Code<br>**----- End of picture text -----**<br>


TO-220AB  package is not recommended for Surface Mount Application. 

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**D[2] Pak (TO-263AB) Package Outline** (Dimensions are shown in millimeters (inches)) 

## **D[2] Pak (TO-263AB) Part Marking Information** 

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Part Number  AUIRF1010ZS<br>Date Code<br>IR Logo  T ézR YWWA  Y= Year<br>WW= Work Week<br><br>XX         XX<br>[|Sd<br>Lot Code<br>**----- End of picture text -----**<br>


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**TO-262 Package Outline** (Dimensions are shown in millimeters (inches) 

## **TO-262 Part Marking Information** 

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Part Number  AUIRF1010ZL<br>Date Code<br>IR Logo  T éaR YWWA  Y= Year<br>WW= Work Week<br><br>XX         XX<br>|<br>Lot Code<br>**----- End of picture text -----**<br>


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## **D[2] Pak (TO-263AB) Tape & Reel Information** (Dimensions are shown in millimeters (inches)) 

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TRR<br>1.60 (.063)<br>1.50 (.059)<br>1.60 (.063)<br>4.10 (.161)<br>3.90 (.153) 1.50 (.059) 0.368 (.0145)<br>0.342 (.0135)<br>FEED DIRECTION 1.85 (.073) 11.60 (.457)<br>1.65 (.065) 11.40 (.449) 24.30 (.957)<br>15.42 (.609)<br>23.90 (.941)<br>15.22 (.601)<br>TRL<br>1.75 (.069)<br>10.90 (.429) 1.25 (.049)<br>10.70 (.421) 4.72 (.136)<br>16.10 (.634) 4.52 (.178)<br>15.90 (.626)<br>**----- End of picture text -----**<br>


**==> picture [70 x 7] intentionally omitted <==**

**----- Start of picture text -----**<br>
FEED DIRECTION<br>**----- End of picture text -----**<br>


**==> picture [377 x 189] intentionally omitted <==**

**----- Start of picture text -----**<br>
13.50 (.532) 27.40 (1.079)<br>12.80 (.504) 23.90 (.941)<br>4<br>330.00 60.00 (2.362)<br>(14.173)       MIN.<br>  MAX.<br>30.40 (1.197)<br>NOTES :       MAX.<br>1.   COMFORMS TO EIA-418.<br>26.40 (1.039) 4<br>2.   CONTROLLING DIMENSION: MILLIMETER. 24.40 (.961)<br>3.   DIMENSION MEASURED @ HUB. 3<br>**----- End of picture text -----**<br>


4.   INCLUDES FLANGE DISTORTION @ OUTER EDGE. 

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|**Qualification Information**|**Qualification Information**|||
|---|---|---|---|
|**Qualification Level**||Automotive<br>(per AEC-Q101)||
|||Comments: This part number(s) passed Automotive qualification. Infineon’s<br>Industrial and Consumer qualification level is granted by extension of the higher<br>Automotive level.||
|**Moisture Sensitivity Level**||TO-220AB|N/A|
|||TO-262|MSL1|
|||D2-Pak||
|**ESD**|Machine Model|Class M4 (+/- 700V)† <br>AEC-Q101-002||
||Human Body Model|Class H1C (+/-1500V)† <br>AEC-Q101-001||
||Charged Device Model|Class C5 (+/-2000V)† <br>AEC-Q101-005||
|**RoHS Compliant**||Yes||



†  Highest passing voltage. 

## **Revision History** 

|**Date**|||**Comments**|
|---|---|---|---|
|11/6//2015||Updated datasheet with corporate template||
|||Corrected orderingtable onpage 1.||



**Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2015 All Rights Reserved.** 

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## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

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