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ATP101-TL-H
Power MOSFET, P Channel, 30 V, 25 A, 0.023 ohm, ATPAK, Surface Mount
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- Manufacturer: ONSEMI
- Product type: Single MOSFETs
- No. of Pins: 3Pins
- Channel Type: P Channel
- Power Dissipation: 30W
- Transistor Mounting: Surface Mount
- Transistor Polarity: P Channel
- Power Dissipation Pd: 30W
- Rds(on) Test Voltage: 10V
- On Resistance Rds(on): 0.023ohm
- Transistor Case Style: ATPAK
- Drain Source Voltage Vds: 30V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 25A
- Drain Source On State Resistance: 0.023ohm
- Gate Source Threshold Voltage Max: 2.6V
| Delivery and price | |
|---|---|
| Units per pack | 500 |
| Price | 0.151 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**Ordering number : ENA1646A** ## **ATP101** ## **P-Channel Power MOSFET –30V, –25A, 30m** Ω **, Single ATPAK** http://onsemi.com ## **Features** - Low ON-resistance - Slim package - Halogen free compliance - Large current - 4.5V drive - Protection diode in ## **Specifi cations** ## **Absolute Maximum Ratings** at Ta=25°C |**Absolute Maximum Ratingsgss**at Ta=25°C|||||| |---|---|---|---|---|---| |Parameter<br>Symbol|Conditions|||Ratings|Unit| |Drain-to-Source Voltage<br>VDSS||||--30|V| |Gate-to-Source Voltage<br>VGSS||||±20|V| |Drain Current(DC)<br>ID||||--25|A| |Drain Current(PW≤10μs)<br>IDP|PW≤10μs, dutycycle≤1%|||--75|A| |Allowable Power Dissipation<br>PD|Tc=25°C|||30|W| |Channel Temperature<br>Tch||||150|°C| |Storage Temperature<br>Tstg||||--55 to +150|°C| |Avalanche Energy (Single Pulse)*1<br>EAS||||25|mJ| |Avalanche Current *2<br>IAV||||--13|A| |Note :*1 VDD=--10V, L=200μH, IAV=--13A|||||| |*2 L≤200μH, Single pulse|||||| |Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating|||||| |Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.||Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.|||| |**Package Dimensions**||**Product & Package Information**|||| |unit : mm (typ)||• Package||: ATPAK|| |7057-001||• JEITA, JEDEC||: -|| |||• Minimum Packing Quantity : 3,000 pcs./reel||• Minimum Packing Quantity : 3,000 pcs./reel|| Note : * 1 VDD= -- 10V, L=200μH, IAV= -- 13A * 2 L≤200μH, Single pulse ## **Package Dimensions** **==> picture [476 x 246] intentionally omitted <==** **----- Start of picture text -----**<br> unit : mm (typ) • Package : ATPAK<br>7057-001 • JEITA, JEDEC : -<br>• Minimum Packing Quantity : 3,000 pcs./reel<br>ATP101-TL-H<br>6.5 1.5 4.6 Packing Type: TL Marking<br>2.6<br>4 0.4 0.4 oO oO ATP101<br>LOT No.<br>TL<br>Electrical Connection<br>4,2<br>2 —<br>1 3 0.55 i<br>0.8 0.6 | |<br>0.4 1 : Gate<br>Z 2.3 2.3 2 : Drain 1<br>3 : Source<br>4 : Drain<br>. Gi<br>. ATPAK 3<br>0.5<br>6.05<br>4.6<br>7.3<br>9.5<br>1.7<br>0.5<br>0.7<br>0.1<br>**----- End of picture text -----**<br> Semiconductor Components Industries, LLC, 2013 **July, 2013** 61312 TKIM/12710PA TKIM TC-00002233 No. A1646-1/7 **ATP101** ## **Electrical Characteristics** at Ta=25°C |**Electrical Characteristics **at Ta|=25°C|||||| |---|---|---|---|---|---|---| |Parameter|Symbol|Conditions|Ratings|||Unit| ||||min|typ|max|| |Drain-to-Source Breakdown Voltage|V(BR)DSS|ID=--1mA, VGS=0V|--30|||V| |Zero-Gate Voltage Drain Current|IDSS|VDS=--30V, VGS=0V|||--1|μA| |Gate-to-Source Leakage Current|IGSS|VGS=±16V, VDS=0V|||±10|μA| |Cutoff Voltage|VGS(off)|VDS=--10V, ID=--1mA|--1.2||--2.6|V| |Forward Transfer Admittance|| yfs||VDS=--10V, ID=--13A||17||S| |Static Drain-to-Source On-State Resistance|RDS(on)1|ID=--13A, VGS=--10V||23|30|mΩ| ||RDS(on)2|ID=--7A, VGS=--4.5V||36|51|mΩ| |Input Capacitance|Ciss|VDS=--10V, f=1MHz||875||pF| |Output Capacitance|Coss|||220||pF| |Reverse Transfer Capacitance|Crss|||155||pF| |Turn-ON Delay Time|td(on)|See specif ed Test Circuit.||9.2||ns| |Rise Time|tr|||70||ns| |Turn-OFF Delay Time|td(off)|||80||ns| |Fall Time|tf|||70||ns| |Total Gate Charge|Qg|VDS=--15V, VGS=--10V, ID=--25A||18.5||nC| |Gate-to-Source Charge|Qgs|||3.2||nC| |Gate-to-Drain “Miller” Charge|Qgd|||4.0||nC| |Diode Forward Voltage|VSD|IS=--25A, VGS=0V||--0.99|--1.5|V| ## **Switching Time Test Circuit** **==> picture [158 x 161] intentionally omitted <==** **----- Start of picture text -----**<br> VIN VDD= --15V<br>0V<br>--10V<br>ID= --13A<br>VIN RL=1.15 Ω<br>D VOUT<br>PW=10 μ s<br>D.C. ≤ 1%<br>G<br>ATP101<br>P.G 50 Ω S<br>**----- End of picture text -----**<br> ## **Ordering Information** |**Ordering Information**|||| |---|---|---|---| |Device|Package|Shipping|memo| |ATP101-TL-H|ATPAK|3,000pcs./reel|Pb Free and Halogen Free| No. A1646-2/7 **ATP101** **==> picture [483 x 737] intentionally omitted <==** **----- Start of picture text -----**<br> ID -- VDS ID -- VGS<br>--25 Tc=25°C --30 VDS= --10V<br>Single pulse<br>--25<br>--20<br>a --20 pees<br>--15 V L- ttt Te<br>--15<br>--10 Wr fe<br>--10<br>--5<br>0 eYu e — e --5 0 HTT ATTee<br>0 --0.5 --1.0 --1.5 --2.0 0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 --4.5 --5.0<br>Drain-to-Source Voltage, VDS -- V IT15312 Gate-to-Source Voltage, VGS -- V IT15313<br>RDS(on) -- VGS RDS(on) -- Tc<br>80 Tc=25°C 80 Single pulse<br>70 TT Single pulse 70 OA<br>60<br>60<br>WT 50 EE<br>50 ID= --7A<br>| --13A 40 CO ete<br>40 Ao) CREERREREE ae<br>KP 30 EEE<br>30<br>CENCE) 20 ee<br>2010 CTPSSEEETTCOO 100 ERPGee<br>--1 --2 --3 --4 --5 --6 --7 --8 --9 --10 --11 --12 --13 --14 --15 --16 --60 --40 --20 0 20 40 60 80 100 120 140 160<br>Gate-to-Source Voltage, VGS -- V IT15314 Case Temperature, Tc -- °C IT15315<br>| yfs | -- ID IS -- VSD<br>5<br>VDS= --10V 5 [7] VGS=0V<br>3<br>3 2 Single pulse<br>TTT --10 SS<br>2<br>5 [7]<br>Cr 3 =<br>2<br>10<br>--1.0<br>7 5 [7]<br>5 Lf |p 32 —<br>--0.1<br>3<br>5 [7]<br>2 a aan 3 — 4 —————<br>2<br>Yo --0.01 Sa<br>1.0 VA 5 [7]<br>3<br>7 eet t ttt tt ee 2 a<br>5 --0.001<br>--0.1 EP tt 2 3 5 tit 7 --1.0 EE 2 3 TEE 5 7 --10 2 TE 3 5 7 --0.2 Po --0.4 eT --0.6 --0.8 --1.0 --1.2 --1.4<br>Drain Current, ID -- A IT15316 Diode Forward Voltage, VSD -- V IT15317<br>SW Time -- ID Ciss, Coss, Crss -- VDS<br>3 3<br>VDD= --15V f=1MHz<br>2 VGS= --10V 2<br>/<br>100 inTt ty TEE Ey PF | | |<br>1000<br>7 te 7<br>5<br>SEE ee 5 a<br>3<br>3<br>2 Spee ee Ne<br>2<br>Te Qa<br>10 td(on)<br>7 oeSST 100 OSS—<br>5 7<br>--0.1 PF tt 2 3 5 ttt 7 --1.0 Te 2 3 Tey 5 7 --10 Ee 2 3 5 7 0 a --5 --10 --15 --20 --25 --30<br>Drain Current, ID -- A IT15318 Drain-to-Source Voltage, VDS -- V IT15319<br>tf<br>VGS= --3.5V<br>td(off)<br>Ciss<br>Crss<br>Coss<br>tr<br>--4.0V<br>D= --13A<br>VGS= --10V, I<br>D= --7A<br>VGS= --4.5V, I<br>°C<br>25<br>°C<br>75<br>°C<br>Tc= --25<br>--4.5V<br>25°C<br>--6.0V<br>--25°C<br>Tc=75°C<br>°C<br>75<br>°C<br>Tc= --25 °C<br>25<br>°C<br>Tc=75<br>°C<br>25<br>--8.0V<br>--16.0V<br>--10.0V<br>°C<br>--25<br>Drain Current, ID -- A Drain Current, ID -- A<br>Ω Ω<br>Static Drain-to-Source On-State Resistance, RDS(on) -- m Static Drain-to-Source On-State Resistance, RDS(on) -- m<br>| -- S<br>fs<br>y<br>|<br>Source Current, IS -- A<br>Forward Transfer Admittance,<br>Ciss, Coss, Crss -- pF<br>Switching Time, SW Time -- ns<br>**----- End of picture text -----**<br> No. A1646-3/7 **ATP101** **==> picture [473 x 368] intentionally omitted <==** **----- Start of picture text -----**<br> VGS -- Qg A S O<br>--10 2<br>VDS= --15V<br>--9 ID= --25A --100 IDP= --75A PW≤10μs<br>7<br>--8 53 ID= --25A<br>--7 2<br>--6 --10<br>7<br>--5 5<br>3 Operation in<br>--4 2 this area is<br>--3 --1.0 limited by R DS(on).<br>7<br>--2 5<br>3<br>--1 2 Tc=25°C<br>0 --0.1 Single pulse<br>0 2 4 6 8 10 12 14 16 18 20 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 5<br>Total Gate Charge, Qg -- nC IT15320 Drain-to-Source Voltage, VDS -- V IT15321<br>PD -- Tc EAS -- Ta<br>35 120<br>30<br>100<br>25<br>80<br>20<br>60<br>15<br>40<br>10<br>20<br>5<br>0 0<br>0 20 40 60 80 100 120 140 160 0 25 50 75 100 125 150 175<br>Case Temperature, Tc -- °C IT15322 Ambient Temperature, Ta -- °C IT10478<br>100<br>μs<br>10<br>μs<br>1ms<br>10ms<br>DC operation<br>100ms<br>Drain Current, ID -- A<br>Gate-to-Source Voltage, VGS -- V<br>Allowable Power Dissipation, PD -- W Avalanche Energy derating factor -- %<br>**----- End of picture text -----**<br> No. A1646-4/7 **ATP101** **Taping Specifi cation** ATP101-TL-H **==> picture [440 x 589] intentionally omitted <==** No. A1646-5/7 **ATP101** **==> picture [81 x 22] intentionally omitted <==** **----- Start of picture text -----**<br> Outline Drawing<br> ATP101-TL-H<br>**----- End of picture text -----**<br> **==> picture [254 x 370] intentionally omitted <==** **----- Start of picture text -----**<br> Mass (g) Unit<br>0.266<br>* For reference [mm]<br>**----- End of picture text -----**<br> ## **Land Pattern Example** **==> picture [215 x 214] intentionally omitted <==** **----- Start of picture text -----**<br> Unit: mm<br>6.5<br>1.5<br>2.3 2.3<br>6.7<br>2<br>1.6<br>**----- End of picture text -----**<br> No. A1646-6/7 **ATP101** Note on usage : Since the ATP101 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PS No. A1646-7/7
Updated at February 9, 2023
onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
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