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AP90T03GH-HF-3TR
Power MOSFET, N Channel, 30 V, 75 A, 0.004 ohm, TO-252 (DPAK), Surface Mount
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- Manufacturer: ADVANCED POWER ELECTRONICS CORP
- Product type: Single MOSFETs
- No. of Pins: 3Pins
- Channel Type: N Channel
- Power Dissipation: 96W
- Transistor Mounting: Surface Mount
- Transistor Polarity: N Channel
- Power Dissipation Pd: 96W
- Rds(on) Test Voltage: 10V
- On Resistance Rds(on): 0.004ohm
- Transistor Case Style: TO-252 (DPAK)
- Drain Source Voltage Vds: 30V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 75A
- Drain Source On State Resistance: 0.004ohm
- Gate Source Threshold Voltage Max: 800mV
| Delivery and price | |
|---|---|
| Units per pack | 10 |
| Price | 0.275 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## - **Advanced Power Electronics Cor . p**
## **AP90T03GH/J** ~~—~~ **RoHS-compliant Product** _**N-CHANNEL ENHANCEMENT MODE**_
_**POWER MOSFET**_
▼ **Lower On- resistance** D BVDSS 30V ▼ **Simple Drive Requirement** RDS(ON) 4m Ω ▼ **Fast Switching Characteristic** ID 75A G S i ~~@~~ **Description** The TO-252 package is widely preferred for commercial-industrial **G D S**
The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP90T03GJ) is available for low-profile applications.
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TO-252(H)<br>**----- End of picture text -----**<br>
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G<br>D<br>S TO-251(J)<br>**----- End of picture text -----**<br>
## **Absolute Maximum Ratings**
|Symbol|Parameter|Rating|Units|
|---|---|---|---|
|VDS|Drain-Source Voltage|30|V|
|VGS|Gate-Source Voltage|+<br>20|V|
|ID@TC=25℃|Continuous Drain Current, VGS@ 10V|75|A|
|ID@TC=100℃|Continuous Drain Current, VGS@ 10V|63|A|
|IDM|Pulsed Drain Current1|350|A|
|PD@TC=25℃|Total Power Dissipation|96|W|
||Linear DeratingFactor|0.7|W/℃|
|TSTG|Storage Temperature Range|-55 to 150|℃|
|TJ|OperatingJunction Temperature Range|-55 to 150|℃|
**Thermal Data** Symbol Parameter Value Unit Rthj-c Maximum Thermal Resistance, Junction-case 1.3 ℃ /W Rthj-a Maximum Thermal Resistance, Junction-ambient (PCB mount)[3] 62.5 ℃ /W ~~—<__—~~ Rthj-a Maximum Thermal Resistance, Junction-ambient 110 ℃ /W
**1**
_Data & specifications subject to change without notice_
**200901063**
## **AP90T03GH/J**
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## **Electrical Characteristics@Tj=25[o] C(unless otherwise specified)**
|Symbol|Parameter|Test Conditions|Min.|Typ.|Max.|Units|
|---|---|---|---|---|---|---|
|BVDSS|Drain-Source Breakdown Voltage|VGS=0V, ID=250uA|30|-|-|V|
|RDS(ON)|Static Drain-Source On-Resistance2|VGS=10V, ID=45A|-|-|4|mΩ|
|||VGS=4.5V, ID=30A|-|-|6|mΩ|
|VGS(th)|Gate Threshold Voltage|VDS=VGS, ID=250uA|0.8|-|3|V|
|gfs|Forward Transconductance|VDS=10V, ID=30A|-|55|-|S|
|IDSS|Drain-Source Leakage Current|VDS=30V, VGS=0V|-|-|1|uA|
||Drain-Source Leakage Current (Tj=125oC)|VDS=24V, VGS=0V|-|-|250|uA|
|IGSS|Gate-Source Leakage|VGS= +<br>20V, VDS=0V|-|-|+<br>100|nA|
|Qg|Total Gate Charge2|ID=40A<br>VDS=24V<br>VGS=4.5V|-|60|96|nC|
|Qgs|Gate-Source Charge||-|8.5||nC|
|Qgd|Gate-Drain("Miller")Charge||-|38||nC|
|td(on)|Turn-on DelayTime2|VDS=15V<br>ID=30A<br>RG=3.3Ω,VGS=10V<br>RD=0.5Ω|-|14|-|ns|
|tr|Rise Time||-|83|-|ns|
|td(off)|Turn-off DelayTime||-|66|-|ns|
|tf|Fall Time||-|120|-|ns|
|Ciss|Input Capacitance|VGS=0V<br>VDS=25V<br>f=1.0MHz|-|4090|6540|pF|
|Coss|Output Capacitance||-|1010|-|pF|
|Crss|Reverse Transfer Capacitance||-|890|-|pF|
## **Source-Drain Diode**
|Symbol|Parameter|Test Conditions|Min.|Typ.|Max.|Units|
|---|---|---|---|---|---|---|
|VSD|Forward On Voltage2|IS=45A, VGS=0V|-|-|1.3|V|
|trr|Reverse Recovery Time2|IS=30A,VGS=0V,<br>dI/dt=100A/µs|-|51|-|ns|
|Qrr|Reverse RecoveryCharge||-|63|-|nC|
## **Notes:**
- 1.Pulse width limited by Max. junction temperature.
- 2.Pulse test
- 3.Surface mounted on 1 in[2] copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN.
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**AP90T03GH/J**
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200<br>T C =25 [o] C<br>10V<br>160 7.0V<br>5.0V<br>4.5V<br>120 V G =3.0V<br>80<br>40<br>0<br>0 1 2 3<br>V DS , Drain-to-Source Voltage (V)<br> , Drain Current (A)<br>ID<br>**----- End of picture text -----**<br>
**Fig 1. Typical Output Characteristics**
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5.0<br>I D =20A<br>T C =25 [o] C<br>4.5<br>4.0<br>3.5<br>2 4 6 8 10<br>V GS , Gate-to-Source Voltage (V)<br> (mΩ)<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>
**Fig 3. On-Resistance v.s. Gate Voltage**
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20<br>15<br>T j =150 [o] C T j =25 [o] C<br>10<br>5<br>0<br>0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1<br>V SD , Source-to-Drain Voltage (V)<br>Is (A)<br>**----- End of picture text -----**<br>
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Fig 5. Forward Characteristic of<br> Reverse Diode<br>**----- End of picture text -----**<br>
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160<br>140 T C = 1 50 [o] C 7.0V10V<br>5.0V<br>120<br>4.5V<br>100 V G =3.0V<br>80<br>60<br>40<br>20<br>0<br>0 1 2 3 4 5<br>V DS , Drain-to-Source Voltage (V)<br> , Drain Current (A)<br>ID<br>**----- End of picture text -----**<br>
**Fig 2. Typical Output Characteristics**
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2.0<br>I D = 45 A<br>1.8 V G =10V<br>1.5<br>1.3<br>1.0<br>0.8<br>0.5<br>0.3<br>0.0<br>-50 0 50 100 150<br>T j , Junction Temperature ( [o] C)<br>DS(ON)<br>Normalized R<br>**----- End of picture text -----**<br>
**Fig 4. Normalized On-Resistance v.s. Junction Temperature**
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2<br>1.5<br>1<br>0.5<br>0<br>-50 0 50 100 150<br>T j , Junction Temperature ( [o] C)<br> (V)<br>GS(th)<br>V<br>**----- End of picture text -----**<br>
**Fig 6. Gate Threshold Voltage v.s. Junction Temperature**
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## **AP90T03GH/J**
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14 10000 f=1.0MHz<br>I D = 40 A<br>12<br>V DS =15V Ciss<br>10 V DS =20V<br>V DS =24V<br>8<br>1000 Coss<br>Crss<br>6<br>4<br>2<br>0 100<br>0 20 40 60 80 100 120 1 5 9 13 17 21 25 29<br>Q G , Total Gate Charge (nC) V DS ,Drain-to-Source Voltage (V)<br>C (pF)<br> , Gate to Source Voltage (V)<br>GS<br>V<br>**----- End of picture text -----**<br>
**Fig 7. Gate Charge Characteristics**
**Fig 8. Typical Capacitance Characteristics**
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1000<br>100 100us<br>1ms<br>10 10ms<br>100ms<br>T c =25 [o] C DC<br>Single Pulse<br>1<br>0.1 1 10 100<br>V DS ,Drain-to-Source Voltage (V)<br>(A)<br>ID<br>**----- End of picture text -----**<br>
**Fig 9. Maximum Safe Operating Area**
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1<br>Duty factor=0.5<br>0.2<br>0.1<br>0.1<br>0.05<br>PDM<br>0.02 t<br>T<br>0.01<br>Single Pulse Duty factor = t/T<br>Peak T j = P DM x R thjc + T C<br>0.01<br>0.00001 0.0001 0.001 0.01 0.1 1 10<br>t , Pulse Width (s)<br>)thjc<br>Normalized Thermal Response (R<br>**----- End of picture text -----**<br>
**Fig 10. Effective Transient Thermal Impedance**
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VDS<br>90%<br>10%<br>VGS<br>td(on) [t] r td(off) tf<br>**----- End of picture text -----**<br>
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VG<br>QG<br>4.5V<br>QGS QGD<br>Charge Q<br>**----- End of picture text -----**<br>
**Fig 11. Switching Time Waveform**
**Fig 12. Gate Charge Waveform**
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## **ADVANCED POWER ELECTRONICS CORP.**
## **Package Outline : TO-252**
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Millimeters<br>D SYMBOLS<br>MIN NOM MAX<br>D1<br>A2 1.80 2.30 2.80<br>A3 0.40 0.50 0.60<br>B1 0.40 0.70 1.00<br>E2<br>D 6.00 6.50 7.00<br>D1 4.80 5.35 5.90<br>E3 3.50 4.00 4.50<br>E3 F 2.20 2.63 3.05<br>E1 F1 0.50 0.85 1.20<br>E1 5.10 5.70 6.30<br>E2 0.50 1.10 1.80<br>e -- 2.30 --<br>C 0.35 0.50 0.65<br>B1 F1<br>F<br>e e 1.All Dimensions Are in Millimeters.<br>2.Dimension Does Not Include Mold Protrusions.<br>R : 0.127~0.381<br>A2<br>A3 (0.1mm C<br>**----- End of picture text -----**<br>
## **Part Marking Information & Packing : TO-252**
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Laser Marking<br>Part Number<br>Meet Rohs requirement<br>for low voltage MOSFET only<br>90T03GH Package Code<br>LOGO<br>YWWSSS Date Code (YWWSSS)<br> Y：Last Digit Of The Year<br> WW：Week<br> SSS：Sequence<br>**----- End of picture text -----**<br>
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**ADVANCED POWER ELECTRONICS CORP.**
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## **Package Outline : TO-251**
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D<br>A<br>c1<br>D1<br>E2<br>E1 E<br>A1<br>B2<br>F<br>B1<br>c<br>e e<br>**----- End of picture text -----**<br>
|SYMBOLS|Millimeters|Millimeters|Millimeters|
|---|---|---|---|
||MIN|NOM|MAX|
|A|2.20|2.30|2.40|
|A1|0.90|1.20|1.50|
|B1|0.40|0.60|0.80|
|B2|0.60|0.85|1.05|
|c|0.40|0.50|0.60|
|c1|0.40|0.50|0.60|
|D|6.40|6.60|6.80|
|D1|4.80|5.20|5.50|
|E|6.70|7.00|7.30|
|E1|5.40|5.60|5.80|
|E2|1.30|1.50|1.70|
|e|----|2.30|----|
|F|7.00|8.30|9.60|
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1.All Dimensions Are in Millimeters.<br>2.Dimension Does Not Include Mold Protrusions.<br>**----- End of picture text -----**<br>
## **Part Marking Information & Packing : TO-251**
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Part Number meet Rohs requirement<br>for low voltage MOSFET only<br>90T03GJ Package Code<br>LOGO<br>YWWSSS Date Code (YWWSSS)<br> Y ：Last Digit Of The Year<br> WW ：Week<br> SSS ：Sequence<br>**----- End of picture text -----**<br>
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Updated at February 9, 2023
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