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AP85T08GS-HF-3TR
Power MOSFET, N Channel, 80 V, 75 A, 0.013 ohm, TO-263 (D2PAK), Surface Mount
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: ADVANCED POWER ELECTRONICS CORP
- Product type: Single MOSFETs
- No. of Pins: 3Pins
- Channel Type: N Channel
- Power Dissipation: 138W
- Transistor Mounting: Surface Mount
- Transistor Polarity: N Channel
- Power Dissipation Pd: 138W
- Rds(on) Test Voltage: 10V
- On Resistance Rds(on): 0.013ohm
- Transistor Case Style: TO-263 (D2PAK)
- Drain Source Voltage Vds: 80V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 75A
- Drain Source On State Resistance: 0.013ohm
- Gate Source Threshold Voltage Max: 1V
| Delivery and price | |
|---|---|
| Units per pack | 4000 |
| Price | 0.169 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**Advanced Power Electronics Cor . p**
## **AP85T08GP/S-HF-3**
## **N-channel Enhancement-mode Power MOSFET**
## **Simple Drive Requirement**
|DSS<br>DS(ON)<br>D<br>**Description**<br>Advanced Power MOSFETs from APEC provide the designer with the best<br>combination of fast switching, low on-resistance and cost-effectiveness.<br>G<br>D<br>S<br>BV 80V<br>**Fast Switching Performance**<br>R 13mΩ<br>**Simple Drive Requirement**<br>**Low On-resistance**<br>**RoHS-compliant, halogen-free**<br>I 75A<br>**G D S**<br>**TO-263 (S)**<br>~~a~~|DSS<br>DS(ON)<br>D<br>**Description**<br>Advanced Power MOSFETs from APEC provide the designer with the best<br>combination of fast switching, low on-resistance and cost-effectiveness.<br>G<br>D<br>S<br>BV 80V<br>**Fast Switching Performance**<br>R 13mΩ<br>**Simple Drive Requirement**<br>**Low On-resistance**<br>**RoHS-compliant, halogen-free**<br>I 75A<br>**G D S**<br>**TO-263 (S)**<br>~~a~~|DSS<br>DS(ON)<br>D<br>**Description**<br>Advanced Power MOSFETs from APEC provide the designer with the best<br>combination of fast switching, low on-resistance and cost-effectiveness.<br>G<br>D<br>S<br>BV 80V<br>**Fast Switching Performance**<br>R 13mΩ<br>**Simple Drive Requirement**<br>**Low On-resistance**<br>**RoHS-compliant, halogen-free**<br>I 75A<br>**G D S**<br>**TO-263 (S)**<br>~~a~~|DSS<br>DS(ON)<br>D<br>**Description**<br>Advanced Power MOSFETs from APEC provide the designer with the best<br>combination of fast switching, low on-resistance and cost-effectiveness.<br>G<br>D<br>S<br>BV 80V<br>**Fast Switching Performance**<br>R 13mΩ<br>**Simple Drive Requirement**<br>**Low On-resistance**<br>**RoHS-compliant, halogen-free**<br>I 75A<br>**G D S**<br>**TO-263 (S)**<br>~~a~~|DSS<br>DS(ON)<br>D<br>**Description**<br>Advanced Power MOSFETs from APEC provide the designer with the best<br>combination of fast switching, low on-resistance and cost-effectiveness.<br>G<br>D<br>S<br>BV 80V<br>**Fast Switching Performance**<br>R 13mΩ<br>**Simple Drive Requirement**<br>**Low On-resistance**<br>**RoHS-compliant, halogen-free**<br>I 75A<br>**G D S**<br>**TO-263 (S)**<br>~~a~~|DSS<br>DS(ON)<br>D<br>**Description**<br>Advanced Power MOSFETs from APEC provide the designer with the best<br>combination of fast switching, low on-resistance and cost-effectiveness.<br>G<br>D<br>S<br>BV 80V<br>**Fast Switching Performance**<br>R 13mΩ<br>**Simple Drive Requirement**<br>**Low On-resistance**<br>**RoHS-compliant, halogen-free**<br>I 75A<br>**G D S**<br>**TO-263 (S)**<br>~~a~~|DSS<br>DS(ON)<br>D<br>**Description**<br>Advanced Power MOSFETs from APEC provide the designer with the best<br>combination of fast switching, low on-resistance and cost-effectiveness.<br>G<br>D<br>S<br>BV 80V<br>**Fast Switching Performance**<br>R 13mΩ<br>**Simple Drive Requirement**<br>**Low On-resistance**<br>**RoHS-compliant, halogen-free**<br>I 75A<br>**G D S**<br>**TO-263 (S)**<br>~~a~~|DSS<br>DS(ON)<br>D<br>**Description**<br>Advanced Power MOSFETs from APEC provide the designer with the best<br>combination of fast switching, low on-resistance and cost-effectiveness.<br>G<br>D<br>S<br>BV 80V<br>**Fast Switching Performance**<br>R 13mΩ<br>**Simple Drive Requirement**<br>**Low On-resistance**<br>**RoHS-compliant, halogen-free**<br>I 75A<br>**G D S**<br>**TO-263 (S)**<br>~~a~~|**TO-263 (S)**<br>**D (tab)**|**TO-263 (S)**<br>**D (tab)**|
|---|---|---|---|---|---|---|---|---|---|
|The AP85T08GS-HF-3 is in the TO-263 package, which is widely used||||||||||
|for commercial and industrial surface-mount applications, and is well<br>suited for low voltage applications such as DC/DC converters.<br>The AP85T08GP-HF-3 is in the TO-220 through-hole package which is<br>used where a small PCB footprint or an attached heatsink is required.|||SS||||||**D (tab)**|
|**Absolute Maximum Ratings**||**G D S**|||**TO-220 (P)**|**TO-220 (P)**|||**TO-220 (P)**|
|Symbol<br>Parameter||Rating|||Units|||||
|VDS<br>Drain-Source Voltage 80 V|e 80 V|e 80 V|e 80 V|e 80 V|e 80 V|||||
|VGS<br>Gate-Source Voltage||±<br>20|||V|||||
|ID<br>C<br>Continuous Drain Current3<br>at T =25°C 75 A|at T =25°C 75 A|at T =25°C 75 A|at T =25°C 75 A|at T =25°C 75 A|at T =25°C 75 A|||||
|ID<br>C<br>Continuous Drain Current3<br>at T =100°C 48 A|at T =100°C 48 A|at T =100°C 48 A|at T =100°C 48 A|at T =100°C 48 A|at T =100°C 48 A|||||
|IDM<br>Pulsed Drain Current1||260 A|260 A|260 A|260 A|||||
|E Single Pulse Avalanche Energy3 450 mJ<br>AS|450 mJ|450 mJ|450 mJ|450 mJ|450 mJ|||||
|I<br>Avalanche Current 30 A<br>AR|Avalanche Current 30 A|Avalanche Current 30 A|Avalanche Current 30 A|Avalanche Current 30 A|Avalanche Current 30 A|||||
|D<br>at TC=25°C<br>P<br>Total Power Dissipation 138 W|ation 138 W|ation 138 W|ation 138 W|ation 138 W|ation 138 W|||||
|Linear DeratingFactor||1.11|||W/°C|||||
|TSTG<br>Storage Temperature Range||-55 to 150 °C|-55 to 150 °C|-55 to 150 °C|-55 to 150 °C|||||
|TJ<br>OperatingJunction Temperature Range||-55 to 150 °C|-55 to 150 °C|-55 to 150 °C|-55 to 150 °C|||||
|**Thermal Data**||||||||||
|Symbol<br>Parameter||Value|||Units|||||
|Rthj-c<br>Maximum Thermal Resistance,Junction-case||0.9 °C/W|0.9 °C/W|0.9 °C/W|0.9 °C/W|||||
|Rthj-a<br>Maximum Thermal Resistance,Junction-ambient(PCB mount)4||40 °C/W|40 °C/W|40 °C/W|40 °C/W|||||
|Rthj-a<br>Maximum Thermal Resistance,Junction-ambient||62 °C/W|62 °C/W|62 °C/W|62 °C/W|||||
## **Low On-resistance**
**Fast Switching Performance RoHS-compliant, halogen-free**
## **Ordering Information**
**AP85T08GS-HF-3TR : RoHS-compliant halogen-free TO-263, shipped on tape and reel (800 pcs/reel)**
**AP85T08GP-HF-3TB : RoHS-compliant halogen-free TO-220, shipped in tubes (50pcs/tube)**
**201204033-3 1/6**
**©2012 Advanced Power Electronics Corp. USA www.a-powerusa.com**
**Advanced Power Electronics Cor . p**
**AP85T08GP/S-HF-3**
## **Electrical Specifications at Tj=25°C (unless otherwise specified)**
|Symbol|Parameter|Test Conditions|Min.|Typ.|Max.|Units|
|---|---|---|---|---|---|---|
|BVDSS|Drain-Source Breakdown Voltage|VGS=0V, ID= 1mA|80|-|-|V|
|RDS(ON)|Static Drain-Source On-Resistance2|VGS=10V, ID=45A -|=45A -|-|13|mΩ|
|VGS(th)|Gate Threshold Voltage|VDS=VGS, ID=250uA 1 - 3 V|=250uA 1 - 3 V|=250uA 1 - 3 V|=250uA 1 - 3 V|=250uA 1 - 3 V|
|gfs|Forward Transconductance|VDS=10V, ID=45A - 70|=45A - 70|=45A - 70|-|S|
|IDSS|Drain-Source Leakage Current|VDS= 80V, VGS=0V -|=0V -|-|10 uA|10 uA|
||Drain-Source Leakage Current (Tj=150oC)|C)VDS= 64V ,VGS=0V -|=0V -|-|100 uA|100 uA|
|IGSS|Gate-Source Leakage|VGS=±20V|-|-|±100|nA|
|Qg|Total Gate Charge2|ID=45A - 63 100<br>VDS=64V<br>VGS=4.5V|=45A - 63 100|=45A - 63 100|=45A - 63 100|nC|
|Qgs|Gate-Source Charge||-|23|-|nC|
|Qgd|Gate-Drain("Miller")Charge||- 38 - nC|- 38 - nC|- 38 - nC|- 38 - nC|
|td(on)|Turn-on DelayTime2|VDS=40V<br>ID=45A - 100 - ns<br>RG=10Ω, VGS= 10V - 144 - ns<br>RD=0.89Ω- 173 -|- 30 - ns|- 30 - ns|- 30 - ns|- 30 - ns|
|tr|Rise Time||=45A - 100 - ns|=45A - 100 - ns|=45A - 100 - ns|=45A - 100 - ns|
|td(off)|Turn-off DelayTime||= 10V - 144 - ns|= 10V - 144 - ns|= 10V - 144 - ns|= 10V - 144 - ns|
|tf|Fall Time||- 173 -|- 173 -|- 173 -|ns|
|Ciss<br>~~—————~~|Input Capacitance<br>~~—————~~|VGS=0V<br>VDS=25V<br>f=1.0MHz<br>~~—————~~|- 6300 10080<br>~~—————~~|- 6300 10080<br>~~—————~~|- 6300 10080<br>~~—————~~|- 6300 10080pF<br>~~—————~~|
|Coss<br>~~—————~~|Output Capacitance<br>~~—————~~||- 670 -<br>~~—————~~|- 670 -<br>~~—————~~|- 670 -<br>~~—————~~|pF<br>~~—————~~|
|Crss<br>~~—————~~|Reverse Transfer Capacitance<br>~~—————~~||- 350<br>~~—————~~|- 350<br>~~—————~~|-<br>~~—————~~|pF<br>~~—————~~|
|Rg<br>~~—————~~|Gate Resistance<br>~~—————~~|f=1.0MHz<br>~~—————~~|- 1.1 1.7<br>~~—————~~|- 1.1 1.7<br>~~—————~~|- 1.1 1.7<br>~~—————~~|- 1.1 1.7Ω<br>~~—————~~|
## **Source-Drain Diode**
Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage[2 ] IS= 45A, VGS=0V - - 1.3 V trr Reverse Recovery Time[2 ] IS=20A, VGS=0V - 47 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 86 - nC ~~—————— ===~~
## **Notes:**
1.Pulse width limited by maximum junction temperature.
- 2.Pulse test - pulse width ~~<~~ 300µs , duty cycle ~~<~~ 2%
3.Starting T j = 25°C, VDD=30V, L=1mH, RG=25Ω, IAS=30A.
- 4.Surface mounted on 1 in2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN.
**2/6**
**©2012 Advanced Power Electronics Corp. USA www.a-powerusa.com**
**Advanced Power Electronics Corp. AP85T08GP/S-HF-3** ~~Oo.~~
## **Typical Electrical Characteristics**
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**----- Start of picture text -----**<br>
250 120<br>T C = 25 [o] C 7.0 V10V T C = 150 [o] C 7.0 V10V<br>200 n/a 5.0V<br>90<br>4 5V<br>150<br>60<br>5.0V<br>100<br>4.5V<br>30<br>50 -——| fo V G =3.0V<br>V G =3.0V<br>0 po 0<br>0 3 6 9 12 0 3 6 9 12<br>V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V)<br> Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics<br>14 2.0<br>I D =20A I D =45A<br>T C =25 [o] C V G =10V<br>13 1.6<br>12 A 1.2 fe<br>11 0.8<br>10 SuePETA 0.4 aEGE<br>2 4 6 8 10 -50 0 50 100 150<br>V GS Gate-to-Source Voltage (V) T j , Junction Temperature ( [o] C)<br> Fig 3. On-Resistance vs. Gate Voltage Fig 4. Normalized On-Resistance<br> vs. Junction Temperature<br>50 2.0<br>40<br>1.5<br>30<br>1.0<br>20 T j =150 [o] C T j =25 [o] C<br>a 0.5 ae<br>10<br>0 eo 0.0<br>0 0 2 0.4 0.6 0 8 1 1.2 1.4 -50 0 0 100 150<br>V SD , Source-to-Drain Voltage (V) [[o]]<br> , Drain Current (A)ID , Drain Current (A)ID<br>)<br>Ω<br> (m DS(ON)<br>DS(ON)<br>R<br>Normalized R<br> (V)<br>GS(th)<br>(A)IS<br>Normalized V<br>**----- End of picture text -----**<br>
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance vs. Gate Voltage
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**----- Start of picture text -----**<br>
T j , Junction Temperature ( [[o]] C)<br>**----- End of picture text -----**<br>
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Fig 5. Forward Characteristic of<br> Reverse Diode<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
Fig 6. Gate Threshold Voltage vs.<br> Junction Temperature<br>**----- End of picture text -----**<br>
**3/6**
**©2012 Advanced Power Electronics Corp. USA**
**www.a-powerusa.com**
**Advanced Power Electronics Cor . p**
**AP85T08GP/S-HF-3**
## **Typical Electrical Characteristics (cont.)**
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**----- Start of picture text -----**<br>
12<br>I D = 45 A<br>10<br>V DS = 4 0 V<br>8 V DS = 50 V<br>V DS = 64 V<br>6<br>4<br>2<br>0<br>0 20 40 60 80 100<br>Q G , Total Gate Charge (nC)<br> , Gate to Source Voltage (V)<br>GS<br>V<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
f=1.0MHz<br>10000<br>C iss<br>1000<br>C oss<br>C rss<br>100<br>1 5 9 13 17 21 25 29<br>V DS ,Drain-to-Source Voltage (V)<br>C (pF)<br>**----- End of picture text -----**<br>
## Fig 7. Gate Charge Characteristics
## Fig 8. Typical Capacitance Characteristics
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**----- Start of picture text -----**<br>
1000 San— 8ee| 1 eeeeal<br>TETSLITOOPTTSTPr erate ep ree Teepe eeee<br>Season lL rato e paacage aaa PE Duty factor=0.5<br>wee lesen S45 coh So po eA|<br>aul aa liud a ao gud i — iia =”a<br>100 ET nnn ree TAT Saat rit nnn AERL” 0.2 an<br>tl Lae EN ON gl | eet eo || ll LTH<br>Tratgympsr~T TYTN 7 TT SMESOWT EQ TANTINTcia 100us =7 37aa ti TT 0 1 i 0 1 “4A po Yo<br>-7 54am -taNonk- a4 TT > Tiatit [OC 0.05 A<br>-L4iuur 2440 asc 1ms an Le i<br>10 Yui rill Ne Noi biti | —— 0.02 AA | PDM t i<br>Pri poml paso 0.01 T<br>- Nayaasst LanesATH THI Ps) Hl<br>Seat[ratampoo T Single Pulse Soe enn c uubi =25 [o] rr C raatEI atamp ann INGENtat iN NeedNeyAG 10ms100ms SStaa ssn een tit aw V Single Pulse y Duty factor t/TPeak T KS) j PDM x Rthjc TC<br>1 nnn I i I i) DC I i 0 01 s ai |<br>0.1 1 10 100 1000 0.00001 0.0001 0.001 0.01 0.1 1<br>V DS , Drain-to-Source Voltage (V) t , Pulse Width (s)<br>)thjc<br>(A)<br>ID<br>Normalized Thermal Response (R<br>**----- End of picture text -----**<br>
## Fig 9. Maximum Safe Operating Area
## Fig 10. Effective Transient Thermal Impedance
**==> picture [182 x 168] intentionally omitted <==**
**----- Start of picture text -----**<br>
120<br>V DS =5V<br>T j =25 [o] C T j =150 [o] C<br>80<br>40<br>0<br>0 2 4 6 8<br>V GS , Gate-to-Source Voltage (V)<br> , Drain Current (A)<br>ID<br>**----- End of picture text -----**<br>
**==> picture [149 x 134] intentionally omitted <==**
**----- Start of picture text -----**<br>
VG<br>QG<br>4.5V<br>QGS QGD<br>Charge Q<br>**----- End of picture text -----**<br>
Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform
**4/6**
**©2012 Advanced Power Electronics Corp. USA www.a-powerusa.com**
**Advanced Power Electronics Cor . p**
**AP85T08GP/S-HF-3**
## **Package Dimensions: TO-220**
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**----- Start of picture text -----**<br>
E<br>E1 A<br>Millimeters<br>SYMBOLS<br>φ MIN NOM MAX<br>L1 L5 A 4.40 4.60 4.80<br>b 0.76 0.88 1.00<br>i r a e 7 =_—=<br>c1<br>D 8.60 8.80 9.00<br>c 0.36 0.43 0.50<br>E 9.80 10.10 10.40<br>D1<br>L4 14.70 15.00 15.30<br>D L5 6.20 6.40 6.60<br>L4 D1 5.10 REF.<br>c1 1.25 1.35 1.45<br>b1 1.17 1.32 1.47<br>L 13.25 13.75 14.25<br>b1<br>e 2.54 REF.<br>L1 2.60 2.75 2.89<br>φ 3.71 3.84 3.96<br>L<br>E1 7.4 REF,<br>c<br>b 1. All dimensions are in millimeters.<br>2. Dimensions do not include mold protrusions.<br>e<br>**----- End of picture text -----**<br>
## **Marking Information: TO-220**
**==> picture [376 x 127] intentionally omitted <==**
**----- Start of picture text -----**<br>
Product: AP85T08<br>Package code<br>GP = RoHS-compliant halogen-free TO-220<br>85T08GP<br>YWWSSS Date/lot code (YWWSSS)<br> Y: Last digit of the year<br> WW: Work week<br> SSS: Lot code sequence<br>**----- End of picture text -----**<br>
**5/6**
**©2012 Advanced Power Electronics Corp. USA www.a-powerusa.com**
**Advanced Power Electronics Corp. AP85T08GP/S-HF-3** ~~Oo.~~ **Package Dimensions: TO-263**
**==> picture [219 x 379] intentionally omitted <==**
**----- Start of picture text -----**<br>
E<br>=<br>D<br>L2 b1<br>L3<br>b<br>a<br>e L4<br>A<br>a c1 f Pu , c θ<br>A1<br>**----- End of picture text -----**<br>
|SYMBOLS<br>~~Ebr~~|Millimeters<br>~~Ebr~~|Millimeters<br>~~Ebr~~|Millimeters<br>~~Ebr~~|
|---|---|---|---|
||MIN<br>~~Ebr~~|NOM<br>~~Ebr~~|MAX<br>~~Ebr~~|
|A<br>~~Ebr~~|4.25<br>~~Ebr~~|4.75<br>~~Ebr~~|5.20<br>~~Ebr~~|
|A1<br>~~Ebr~~|0.00<br>~~Ebr~~|0.15<br>~~Ebr~~|0.30<br>~~Ebr~~|
|A2<br>~~Ebr~~|2.20<br>~~Ebr~~|2.45<br>~~Ebr~~|2.70<br>~~Ebr~~|
|b|0.70|0.90|1.10|
|b1|1.07|1.27|1.47|
|c|0.30|0.45|0.60|
|c1|1.15|1.30|1.45|
|D|8.30|8.90|9.40|
|E<br>~~---~~|9.70<br>~~---~~|10.10<br>~~---~~|10.50<br>~~---~~|
|e<br>~~---~~|2.04<br>~~---~~|2.54<br>~~---~~|3.04<br>~~---~~|
|L2<br>~~---~~|-----<br>~~---~~|1.50<br>~~---~~|-----<br>~~---~~|
|L3<br>~~---~~|4.50<br>~~---~~|4.90<br>~~---~~|5.30<br>~~---~~|
|L4<br>~~---~~|-----<br>~~---~~|1.50<br>~~---~~|----<br>~~---~~|
1. All dimensions are in millimeters.
2. Dimensions do not include mold protrusions.
## **Marking Information: TO-263**
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**----- Start of picture text -----**<br>
85T08GS<br>YWWSSS<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
Product: AP85T08<br>Package code:<br>GS = RoHS-compliant halogen-free TO-263<br>**----- End of picture text -----**<br>
Date Code (YWWSSS) Y : Last digit of the year WW : Work week SSS : Lot code sequence
**6/6**
**©2012 Advanced Power Electronics Corp. USA www.a-powerusa.com**
Updated at February 9, 2023
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