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AP4232BGM-HF-3TR
Dual MOSFET, N Channel, 30 V, 7.6 A, 0.022 ohm, SOIC, Surface Mount
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- Manufacturer: ADVANCED POWER ELECTRONICS CORP
- Product type: Dual MOSFETs
- No. of Pins: 8Pins
- Channel Type: N Channel
- Transistor Mounting: Surface Mount
- Transistor Polarity: N Channel
- Power Dissipation Pd: 2W
- Rds(on) Test Voltage: 10V
- On Resistance Rds(on): 0.022ohm
- Transistor Case Style: SOIC
- Drain Source Voltage Vds: 30V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 7.6A
- Power Dissipation N Channel: 2W
- Power Dissipation P Channel: 2W
- Gate Source Threshold Voltage Max: 1V
- Drain Source Voltage Vds N Channel: 30V
- Drain Source Voltage Vds P Channel: 30V
- Continuous Drain Current Id N Channel: 7.6A
- Continuous Drain Current Id P Channel: 7.6A
- Drain Source On State Resistance N Channel: 0.022ohm
- Drain Source On State Resistance P Channel: 0.022ohm
| Delivery and price | |
|---|---|
| Units per pack | 1 |
| Price | 0.144 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## **Advanced Power Electronics Corp. AP4232BGM-HF-3 Dual N-channel Enhancement-mode Power MOSFETs Simple Drive Requirement** BV DSS 30V **Low Gate-charge** R DS(ON) 22mΩ **Fast Switching Performance** I D 7.6A ~~——~~ **RoHS-compliant halogen-free SO-8 package** D1 D2 G1 G G2 G G2 **Description**
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D1 D2<br>G1 G G2 G G2<br>S1 S2<br>**----- End of picture text -----**<br>
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
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D2<br>D2<br>D1<br>D1<br>G2<br>S2<br>G1<br>SO-8 S1<br>**----- End of picture text -----**<br>
The AP4232BGM-HF-3 is in the popular SO-8 surface-mount package and is well-suited for use in low-voltage DC/DC conversion and general load-switching applications.
## **Absolute Maximum Ratings**
|Symbol|Parameter|Rating|Units|
|---|---|---|---|
|VDS|Drain-Source Voltage|e30V|V|
|VGS|Gate-Source Voltage|±20 V|0 V|
|ID atTA=25°C|Continuous Drain Current3<br>|7.6 A|7.6 A|
|ID atTA=70°C|Continuous Drain Current3|6 A|6 A|
|IDM|Pulsed Drain Current1|30A|A|
|PD atTA=25°C|Total Power Dissipation|2|2W|
||Linear DeratingFactor|0.016|W/°C|
|TSTG|Storage Temperature Range|-55 to 150°C|°C|
|TJ|OperatingJunction Temperature Range|-55 to 150°C|°C|
## **Thermal Data**
|**Thermal Data**||||
|---|---|---|---|
|Symbol|Parameter|Value|Unit|
|Rthj-a|Maximum Thermal Resistance,Junction-ambient3|62.5|°C/W|
## **Ordering Information**
**AP4232BGM-HF-3TR RoHS-compliant halogen-free SO-8, shipped on tape and reel, 3000pcs/reel**
**200908031-3 1/5**
**©2010 Advanced Power Electronics Corp. USA www.a-powerusa.com**
**Advanced Power Electronics Cor . p**
**AP4232BGM-HF-3**
## **Electrical Characteristics at Tj = 25°C (unless otherwise specified)**
|Symbol|Parameter|Test Conditions|Min.|Typ.|Max.|Units|
|---|---|---|---|---|---|---|
|BVDSS|Drain-Source Breakdown Voltage|VGS=0V, ID=250uA|30|-|-|V|
|RDS(ON)|Static Drain-Source On-Resistance2|VGS=10V, ID=7A|-|-|22|mΩ|
|||VGS=4.5V, ID=5A|-|-|32|mΩ|
|VGS(th)|Gate Threshold Voltage|VDS=VGS, ID=250uA|1|-|3|V|
|gfs|Forward Transconductance|VDS=10V, ID=7A|-|15|-|S|
|IDSS|Drain-Source Leakage Current|VDS=30V, VGS=0V|-|-|1|uA|
|IGSS|Gate-Source Leakage|VGS=±20V, VDS=0V|-|-|±100|nA|
|Qg|Total Gate Charge2|ID=7A<br>VDS=15V<br>VGS=4.5V|-|6|9.6|nC|
|Qgs|Gate-Source Charge||-|1.3|-|nC|
|Qgd|Gate-Drain("Miller")Charge||-|3.4|-|nC|
|td(on)|Turn-on DelayTime2|VDS=15V<br>ID=1A<br>RG=3.3Ω,VGS=10V <br>RD=15Ω|-|6|-|ns|
|tr|Rise Time||-|7.5|-|ns|
|td(off)|Turn-off DelayTime||-|16|-|ns|
|tf|Fall Time||-|4|-|ns|
|Ciss<br>~~=~~|Input Capacitance|VGS=0V<br>VDS=25V<br>f=1.0MHz<br>~~ESSE~~|-<br>~~ESSE~~|370<br>~~ESSE~~|600<br>~~ESSE~~|pF<br>~~ESSE~~|
|Coss<br>~~=~~|Output Capacitance||-<br>~~ESSE~~|90<br>~~ESSE~~|-<br>~~ESSE~~|pF<br>~~ESSE~~|
|Crss<br>~~=~~|Reverse Transfer Capacitance||-<br>~~ESSE~~|75<br>~~ESSE~~|-<br>~~ESSE~~|pF<br>~~ESSE~~|
|Rg<br>~~=~~|Gate Resistance|f=1.0MHz<br>~~ESSE~~|-<br>~~ESSE~~|1.6<br>~~ESSE~~|3.2<br>~~ESSE~~|Ω<br>~~ESSE~~|
## **Source-Drain Diode**
|Symbol|Parameter|Test Conditions|Min.|Typ.|Max.|Units|
|---|---|---|---|---|---|---|
|VSD|Forward On Voltage2|IS=1.7A, VGS=0V|-|-|1.2|V|
|trr|Reverse Recovery Time2|IS=7A,VGS=0V,<br>dI/dt=100A/µs|-|17.5|-|ns|
|Qrr|Reverse RecoveryCharge||-|10|-|nC|
## **Notes:**
- 1.Pulse width limited by maximum junction temperature.
- 2.Pulse width ~~<~~ 300us, duty cycle ~~<~~ 2%
3.Surface-mounted on 1 in[2] copper pad of FR4 board; 135 °C/W when mounted on minimum copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN.
**2/5**
**©2010 Advanced Power Electronics Corp. USA www.a-powerusa.com**
**Advanced Power Electronics Cor . p**
**AP4232BGM-HF-3**
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40 40<br>T A = 25 [o] C 10V T A = 150 [o] C 10V<br>7.0V 7.0V<br>6.0V 6.0V<br>30 Woo] 5.0V 30 Ie 5.0V<br>V G = 4.0V V G = 4.0 V<br>20 20<br>pee ee<br>100 VoPoreiE) 100 PEE<br>0 1 2 3 4 0 1 2 3 4 5<br>V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V)<br> Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics<br>30 2.0<br>I D = 5 A I D = 7 A<br>T A =25°C V G =10V<br>26<br>1.6<br>22 =<br>1.2<br>18 po<br>0.8<br>1410 SaeNeuaePs 0.4<br>2 4 6 8 10 -50 0 50 100 150<br>V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( [o] C)<br> Fig 3. On-Resistance vs. Gate Voltage Fig 4. Normalized On-Resistance<br> vs. Junction Temperature<br>8 1.4<br>1.2<br>6<br>1.0<br>4<br>= T j =150 [o] C T j =25 [o] C 0.8<br>2<br>Cee 0.6<br>0 po 0.4<br>0 0.2 0.4 0.6 0.8 1 1.2 -50 0 50 100 150<br>V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( [o] C)<br> , Drain Current (A)ID , Drain Current (A)ID<br>) DS(ON)<br>Ω<br> (m<br>DS(ON)<br>R Normalized R<br> (V)<br>GS(th)<br>(A)IS<br>Normalized V<br>**----- End of picture text -----**<br>
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance vs. Gate Voltage
Fig 5. Forward Characteristic of Reverse Diode
Fig 6. Gate Threshold Voltage vs. Junction Temperature
**3/5**
**©2010 Advanced Power Electronics Corp. USA**
**www.a-powerusa.com**
**Advanced Power Electronics Cor . p**
**AP4232BGM-HF-3**
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600 f=1.0MHz<br>10<br>500<br>8<br>I D = 7 A<br>400<br>V DS =15V<br>6 C iss<br>300 op a<br>4<br>200<br>2<br>100 C oss<br>C rss<br>0 0<br>0 2 4 6 8 10 12 1 5 9 13 17 21 25 29<br>Q G , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V)<br> Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics<br>100 crate a a 1 Po eeee<br>aTTT TTT eeETT TTT TTTedTT raa ee 20 ||<br>aoe a a a a a ee PE Duty factor=0.5 Tnmr er<br>10 Operation in this area limited b NESTSE y a bee met ene Font cuTeoEEA<br>RDS(ON) BSE<br>onPSs IN TIS NfOS ENP EISLt OTT 0.2 eepie AAtTHTTT II<br>~T TTIW SIND EGET yioNe ASEY 100us FenTait ene?SA MN<br>1ms 0.1<br>1 0.1 PDM<br>PEIESHESeattleSPiraeboeFata SEcesr+ SPAHRtraeeltttt S EERIEE++ ENHEEINEFIFItIAASNe— EFES Fp 100ms10ms EISIEPeseisinett Poee 0.05 ae>=TAAL<sea77 Alle q]lelkK t | >| T | | nuliani||ITTWl]<br>Duty factor = t/T<br>0.1 eT rere —ae 1s ay 0.02 L/ R Peak Tthja = 135°C/W j = PDM x Rthja + Ta<br>TtTETTAGe Single Pulse | T A ttAae =25 | tl [o] C Trt I | CTraaetithe ti tetTota | eltitiP til TN DC Pititoa Ll | | —, 0.01Single Pulse / /<br>TP Tramp or Tn or rn oe Prin<br>0.01 i i inal i imei i (me im i 0.01 d<br>0.01 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 100 1000<br>V DS , Drain-to-Source Voltage (V) t , Pulse Width (s)<br>C (pF)<br> , Gate to Source Voltage (V)<br>GS<br>V<br>)thja<br>(A)<br>ID<br>Normalized Thermal Response (R<br>**----- End of picture text -----**<br>
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
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VDS<br>90%<br>10%<br>VGS<br>td(on) [t] r td(off)tf<br>**----- End of picture text -----**<br>
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VG<br>QG<br>4.5V<br>QGS QGD<br>p e /<br>Charge Q<br>**----- End of picture text -----**<br>
Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform
**4/5**
**©2010 Advanced Power Electronics Corp. USA www.a-powerusa.com**
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Advanced Power<br>Electronics Corp. AP4232BGM-HF-3<br>Oo.<br>Package Dimensions: SO-8<br>D<br>Millimeters<br>_ es<br>SYMBOLS MIN NOM MAX<br>A 1.35 1.55 1.75<br>8 7 6 5 A1 0.10 0.18 0.25<br>| eeee ee ee<br>| ee B 0.33 ee 0.41 ee 0.51 ee<br>E1 E C 0.19 0.22 0.25<br>D 4.80 4.90 5.00<br>| ee<br>1 E1 3.80 3.90 4.00<br>2 3 4<br>aa| e E e 5.80 ee 6.15 ee 6.50 ee<br>L 0.38 0.71 1.27<br>| | | T ] — —o<br>e Toe θ 0 ee 4.00 ee 8.00 ee<br>e 1.27 TYP<br>— | fe B es<br>A<br>fee<br>A1<br>**----- End of picture text -----**<br>
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DETAIL A L θ<br>**----- End of picture text -----**<br>
1. All dimensions are in millimeters.
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c<br>.——<br>DETAIL A<br>Marking Information: SO-8<br>oo ae<br>( —t<br>4232BGM<br>YWWSSS<br>kz<br>**----- End of picture text -----**<br>
2. Dimensions do not include mold protrusions.
## **Marking Information: SO-8**
Product: AP4232B Package: GM = RoHS-compliant halogen-free SO-8 Date/lot code (YWWSSS) Y: Last digit of the year WW: Work week SSS: Lot code sequence
**5/5**
**©2010 Advanced Power Electronics Corp. USA www.a-powerusa.com**
Updated at February 9, 2023
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