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AP2322GN-HF-3TR
Power MOSFET, N Channel, 20 V, 2.5 A, 0.09 ohm, SOT-23, Surface Mount
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- Manufacturer: ADVANCED POWER ELECTRONICS CORP
- Product type: Single MOSFETs
- No. of Pins: 3Pins
- Channel Type: N Channel
- Power Dissipation: 833mW
- Transistor Mounting: Surface Mount
- Transistor Polarity: N Channel
- Power Dissipation Pd: 833mW
- Rds(on) Test Voltage: 4.5V
- On Resistance Rds(on): 0.09ohm
- Transistor Case Style: SOT-23
- Drain Source Voltage Vds: 20V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 2.5A
- Drain Source On State Resistance: 0.09ohm
- Gate Source Threshold Voltage Max: 250mV
| Delivery and price | |
|---|---|
| Units per pack | 30000 |
| Price | 0.073 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**Advanced Power Electronics Cor . p**
**AP2322GN-HF-3**
## **N-channel Enhancement-mode Power MOSFET**
## **Simple Drive Requirement**
**Supports 1.8V Gate Drive**
**Surface Mount Device RoHS-compliant, halogen-free**
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D<br>BV 20VDSS<br>R 90mΩ<br>DS(ON)<br>G<br>I 2.5AD<br>S<br>**----- End of picture text -----**<br>
## **Description**
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.
The AP2322GN-HF-3 is in the popular SOT-23 small surface-mount package which is widely used in commercial and industrial applications where a small board footprint is required.
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D<br>S<br>SOT-23 G<br>**----- End of picture text -----**<br>
This device is well suited for use in medium current applications such as voltage conversion or switch applications.
## **Absolute Maximum Ratings**
|Symbol|Parameter|Rating|Units|
|---|---|---|---|
|VDS|Drain-Source Voltage 20 V|e 20 V|e 20 V|
|VGS|Gate-Source Voltage|±<br>8|V|
|D A<br>I<br>at T =25°C|Continuous Drain Current3<br>at T =25°C|at T =25°C 2.5A|A|
|ID<br>A<br>at T = 70°C 2.0 A|Continuous Drain Current3<br>at T = 70°C 2.0 A|at T = 70°C 2.0 A|at T = 70°C 2.0 A|
|IDM|Pulsed Drain Current1|10 A|10 A|
|D at TA=25°C<br>P|Total Power Dissipation 0.833 W|ation 0.833 W|ation 0.833 W|
|TSTG|Storage Temperature Range|-55 to 150 °C|-55 to 150 °C|
|J<br>T|Operating Junction Temperature Range|-55 to 150 °C|-55 to 150 °C|
## **Thermal Data**
|Symbol|Parameter|Value|Unit|
|---|---|---|---|
|Rthj-a|Maximum Thermal Resistance,Junction-ambient|150 °C/W|150 °C/W|
## **Ordering Information**
**AP2322GN-HF-3TR : in RoHS-compliant halogen-free SOT-23, shipped on tape and reel, 3000pcs/ reel**
**201009173-3 1/5**
**©2011 Advanced Power Electronics Corp. USA**
**www.a-powerusa.com**
**Advanced Power Electronics Cor . p**
**AP2322GN-HF-3**
## **Electrical Specifications at Tj=25°C (unless otherwise specified)**
|Symbol|Parameter|Test Conditions|Min.|Typ.|Max.|Units|
|---|---|---|---|---|---|---|
|BVDSS|Drain-Source Breakdown Voltage|VGS=0V, ID=250uA|20|-|-|V|
|RDS(ON)|Static Drain-Source On-Resistance2|VGS=4.5V, ID=1.6A|-|-|90 m|90 mΩ|
|||VGS=2.5V, ID=1A|-|-|120 m|120 mΩ|
|||VGS=1.8V, ID=0.3A|-|-|150 m|150 mΩ|
|VGS(th)|Gate Threshold Voltage|VDS=VGS, ID=1mA|0.25|-|1|V|
|gfs|Forward Transconductance|VDS=5V, ID=2A|-|2|-|S|
|IDSS<br>~~=~~|Drain-Source Leakage Current<br>~~=~~|VDS=20V, VGS=0V<br>~~=~~|-<br>~~=~~|-<br>~~=~~|1<br>~~=~~|uA<br>~~=~~|
|IGSS<br>~~=~~|Gate-Source Leakage<br>~~=~~|VGS=±8V, VDS=0V<br>~~=~~|-<br>~~=~~|-<br>~~=~~|±100<br>~~=~~|nA<br>~~=~~|
|Qg<br>~~=~~|Total Gate Charge2<br>~~=~~|ID=2.2A<br>VDS=16V<br>VGS=4.5V<br>~~=~~<br>~~===~~|-<br>~~=~~|7<br>~~=~~|11<br>~~=~~|nC<br>~~=~~|
|Qgs<br>~~=~~|Gate-Source Charge<br>~~=~~||-<br>~~=~~|0.7<br>~~=~~|-<br>~~=~~|nC<br>~~=~~|
|Qgd<br>~~=~~<br>~~—————~~|Gate-Drain("Miller")Charge<br>~~=~~<br>~~—————~~||-<br>~~=~~<br>~~===~~|2.5<br>~~=~~<br>~~===~~|-<br>~~=~~<br>~~===~~|nC<br>~~=~~<br>~~===~~|
|td(on)<br>~~—————~~|Turn-on DelayTime2<br>~~—————~~|VDS=10V<br>ID=1A<br>RG=3.3Ω<br>VGS=5V<br>~~===~~|-<br>~~===~~|6<br>~~===~~|-<br>~~===~~|ns<br>~~===~~|
|tr<br>~~—————~~|Rise Time<br>~~—————~~||-<br>~~===~~|12<br>~~===~~|-<br>~~===~~|ns<br>~~===~~|
|td(off)<br>~~—————~~|Turn-off DelayTime<br>~~—————~~||-<br>~~===~~|16<br>~~===~~|-<br>~~===~~|ns<br>~~===~~|
|tf<br>~~—————~~|Fall Time<br>~~—————~~||-<br>~~===~~|4<br>~~===~~|-<br>~~===~~|ns<br>~~===~~|
|Ciss<br>~~—————~~<br>~~=~~|Input Capacitance<br>~~—————~~|VGS=0V<br>VDS=20V<br>f=1.0MHz<br>~~===~~<br>~~SS~~|-<br>~~===~~<br>~~SS~~|350<br>~~===~~<br>~~SS~~|560<br>~~===~~<br>~~SS~~|pF<br>~~===~~<br>~~SS~~|
|Coss<br>~~=~~|Output Capacitance||-<br>~~SS~~|55<br>~~SS~~|-<br>~~SS~~|pF<br>~~SS~~|
|Crss<br>~~=~~|Reverse Transfer Capacitance||-<br>~~SS~~|48<br>~~SS~~|-<br>~~SS~~|pF<br>~~SS~~|
|Rg<br>~~=~~|Gate Resistance|f=1.0MHz<br>~~SS~~|-<br>~~SS~~|3.2<br>~~SS~~|4.8<br>~~SS~~|Ω<br>~~SS~~|
## **Source-Drain Diode**
|Symbol<br>~~—————~~|Parameter<br>~~—————~~|Test Conditions<br>~~==~~|Min.<br>~~==~~|Typ.<br>~~==~~|Max.<br>~~==~~|Units<br>~~==~~|
|---|---|---|---|---|---|---|
|VSD<br>~~—————~~|Forward On Voltage2<br>~~—————~~|IS=0.7A, VGS=0V<br>~~==~~|-<br>~~==~~|-<br>~~==~~|1.2<br>~~==~~|V<br>~~==~~|
|trr<br>~~—————~~|Reverse RecoveryTime2<br>~~—————~~|IS=2A, VGS=0V,<br>dI/dt=100A/µs<br>~~==~~|-<br>~~==~~|20<br>~~==~~|-<br>~~==~~|ns<br>~~==~~|
|Qrr<br>~~—————~~|Reverse RecoveryCharge<br>~~—————~~||-<br>~~==~~|13<br>~~==~~|-<br>~~==~~|nC<br>~~==~~|
## **Notes:**
1. Pulse width limited by maximum junction temperature.
2. Pulse test - pulse width ~~<~~ 300µs , duty cycle ~~<~~ 2%
3. Surface mounted on 1in2 copper pad of FR4 board, t ~~<1~~ 0sec; 360°C/W when mounted on minimum copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN.
**2/5**
**©2011 Advanced Power Electronics Corp. USA www.a-powerusa.com**
**Advanced Power Electronics Corp. AP2322GN-HF-3** ~~Oo~~ **Typical Electrical Characteristics**
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10 10<br>T A =25 [o] C 5.0V T A = 150 [o] C 5.0V<br>4.0V 4. 0 V<br>8 3.0V 8 3.0 V<br>2.5V 2.5V<br>V G = 2.0 V V G = 2.0 V<br>6 6<br>4 4<br>2 2<br>0 f 0 |v<br>0 0.5 1 1.5 2 0 1 2 3 4<br>V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V)<br> Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics<br>120 1.6<br>I D =0.3A I D = 1.6 A<br>T A =25 [o] C V G =4.5V<br>1.4<br>100<br>1.2<br>80<br>1.0<br>60<br>0.8<br>40 SEPT 0.6 [abe<br>0 2 4 6 8 10 -50 0 50 100 150<br>V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( [o] C)<br> Fig 3. Normalized BVDSS vs. DSS vs. vs. Fig 4. Normalized On-Resistance<br>Gate Voltage vs. Junction Temperature<br>5 0.8<br>4<br>T j =150 [o] C T j =25 [o] C 0.6<br>3<br>0.4<br>2<br>pf 0.2 TSS<br>1<br>0 EE 0.0<br>0 0.2 0.4 0.6 0.8 1 1.2 1.4 -50 0 50 100 150<br>V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( [o] C)<br> Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage vs.<br> Reverse Diode Junction Temperature<br> , Drain Current (A)<br> , Drain Current (A)ID ID<br>)<br>Ω DS(ON)<br> (m<br>DS(ON)<br>R<br>Normalized R<br>(V)<br>GS(th)<br>(A)IS<br>Normalized V<br>**----- End of picture text -----**<br>
Fig 1. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Fig 3. Normalized BVDSS vs. DSS vs. vs.
**3/5**
**©2011 Advanced Power Electronics Corp. USA**
**www.a-powerusa.com**
**Advanced Power Electronics Cor . p**
**AP2322GN-HF-3**
## **Typical Electrical Characteristics (cont.)**
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12<br>I D =2.2A<br>V DS =8V<br>10<br> V DS =12V<br> V DS =16V<br>8<br>6<br>4 Of<br>2<br>0 ao<br> , Gate to Source Voltage (V)<br>GS<br>V<br>**----- End of picture text -----**<br>
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0 4 8 12 16<br>Q G , Total Gate Charge (nC)<br>**----- End of picture text -----**<br>
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f=1.0MHz<br>1000<br>C iss<br>100<br>C oss<br>C rss<br>10<br>1 5 9 13 17 21 25<br>V DS , Drain-to-Source Voltage (V)<br>C (pF)<br>**----- End of picture text -----**<br>
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
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100<br>10 ane | a<br>= FEM 1ms<br>ZN = = TSQretoeS Frain<br>1<br>NOK NSNSN ON<br>10ms<br>ee ee<br>0.1 | | | \ | 100ms fbr<br>SEEEEE e EEEETE<br>T A =25 [o] C 1s<br>Single Pulse DC<br>0.01<br>0.1 anit 1 10 EE 100<br>V DS , Drain-to-Source Voltage (V)<br>(A)<br>ID<br>**----- End of picture text -----**<br>
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1<br>Duty factor=0.5<br>0.2<br>rt i dima at a<br>0.1 0.1<br>0.05<br>Sears si cat? dmeatat cemetinimmeeinieei<br>PDM<br>Wal/ HU t<br>0.01 T<br>0.01 Single Pulse Duty factor = t/T aa<br>Peak T j = P DM x R thja + T a<br>Rthja = 360°C/W<br>/ ad i<br>Jos |<br>0.001<br>0.0001 PAVIA 0.001 AY 0.01 UT 0.1 CITC 1 10 CT 100 1000<br>t , Pulse Width (s)<br>)thja<br>Normalized Thermal Response (R<br>**----- End of picture text -----**<br>
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
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10<br>V DS =5V<br>8<br>T j =25 [o] C T j =150 [o] C<br>6<br>4<br>2<br>0 fo<br>0 1 2 3<br>V GS , Gate-to-Source Voltage (V)<br> , Drain Current (A)<br>ID<br>**----- End of picture text -----**<br>
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VG<br>QG<br>4.5V<br>QGS QGD<br>Charge Q<br>**----- End of picture text -----**<br>
Fig 11. Transfer Characteristics Fig 12. Gate Charge Circuit
**4/5**
**©2011 Advanced Power Electronics Corp. USA www.a-powerusa.com**
**AP2322GN-HF-3**
## **Advanced Power Electronics Cor . p** ~~@o~~ **Package Dimensions: SOT-23**
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D<br>oe SYMBOLS Millimeters<br>D1<br>MIN NOM MAX<br>A 0.88 -- 1.30<br>ge ee ee<br>ee A1 0.00 ee ee -- eee 0.10<br>| E1 ee A2 0.08 ee ee -- eee 0.25<br>E<br>ee D1 0.30 ee 0.40 ee eee 0.50<br>e 1.70 2.00 2.30<br>ee D 2.70 2.90 3.10<br>E 2.20 2.60 3.00<br>E1 1.20 1.50 1.80<br>e<br>oS ee M 0° -- 10°<br>L 0.30 -- 0.60<br>A A2 M<br>A1 M<br>| o t -<br>L<br>**----- End of picture text -----**<br>
1. All dimensions are in millimeters.
2. Dimensions do not include mold protrusions.
## **Marking Information:**
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NOXX<br>Date/lot code<br>oe<br>**----- End of picture text -----**<br>
Product: NO = AP2322GN-HF-3
For details of how to convert this to standard YYWW date code format, please contact us directly.
**5/5**
**©2011 Advanced Power Electronics Corp. USA www.a-powerusa.com**
Updated at February 9, 2023
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