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AP2318GEN-HF-3TR
Power MOSFET, N Channel, 30 V, 500 mA, 1.5 ohm, SOT-23, Surface Mount
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: ADVANCED POWER ELECTRONICS CORP
- Product type: Single MOSFETs
- No. of Pins: 3Pins
- Channel Type: N Channel
- Power Dissipation: 700mW
- Transistor Mounting: Surface Mount
- Transistor Polarity: N Channel
- Power Dissipation Pd: 700mW
- Rds(on) Test Voltage: 4V
- On Resistance Rds(on): 1.5ohm
- Transistor Case Style: SOT-23
- Drain Source Voltage Vds: 30V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 500mA
- Drain Source On State Resistance: 1.5ohm
- Gate Source Threshold Voltage Max: 400mV
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.069 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**Advanced Power Electronics Cor . p**
## **AP2318GEN-HF-3**
## **N-channel Enhancement-mode Power MOSFET**
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**----- Start of picture text -----**<br>
Capable of 2.5V Gate Drive D<br>Small Package Outline BV 30VDSS<br>Surface Mount Device R 1.5Ω<br>DS(ON)<br>G<br>RoHS-compliant, halogen-free I 500mAD<br>S<br>cr<br>Description D<br>Advanced Power MOSFETs from APEC provide the designer with the best<br>combination of fast switching, low on-resistance and cost-effectiveness.<br>S<br>The AP2318GEN-HF-3 is in the popular SOT-23 small surface-mount package<br>SOT-23 G<br>**----- End of picture text -----**<br>
## **Small Package Outline**
The AP2318GEN-HF-3 is in the popular SOT-23 small surface-mount package which is widely used in commercial and industrial applications where a small board footprint is required.
This device is well suited for use in applications such as load switches.
## **Absolute Maximum Ratings**
|Symbol|Parameter|Rating|Units|
|---|---|---|---|
|VDS|Drain-Source Voltage 30 V|e 30 V|e 30 V|
|VGS|Gate-Source Voltage|~~+~~<br>16 V|16 V|
|D A<br>I<br>at T =25°C|Continuous Drain Current3<br>at T =25°C|at T =25°C 0.5 A|0.5 A|
|ID<br>A<br>at T = 70°C 0.4 A|Continuous Drain Current3<br>at T = 70°C 0.4 A|at T = 70°C 0.4 A|at T = 70°C 0.4 A|
|IDM|Pulsed Drain Current1|2 A|2 A|
|D at TA=25°C<br>P|Total Power Dissipation 0.7 W|ation 0.7 W|ation 0.7 W|
|TSTG|Storage Temperature Range|-55 to 150 °C|-55 to 150 °C|
|J<br>T|Operating Junction Temperature Range|-55 to 150 °C|-55 to 150 °C|
## **Thermal Data**
|Symbol|Parameter|Value|Unit|
|---|---|---|---|
|Rthj-a|Maximum Thermal Resistance,Junction-ambient3|180 °C/W|180 °C/W|
## **Ordering Information**
**AP2318GEN-HF-3TR RoHS-compliant halogen-free SOT-23, shipped on tape and reel, 3000pcs/ reel**
**200901154-3 1/5**
**©2010 Advanced Power Electronics Corp. USA**
**www.a-powerusa.com**
**Advanced Power Electronics Cor . p**
**AP2318GEN-HF-3**
**Electrical Specifications at Tj=25°C (unless otherwise specified)**
|Symbol<br>~~ee~~|Parameter<br>~~ee~~|Test Conditions<br>~~ee~~|Min.<br>~~ee~~|Typ.<br>~~ee~~|Max. Units<br>~~ee~~|Max. Units<br>~~ee~~|
|---|---|---|---|---|---|---|
|BVDSS<br>~~ee~~<br>~~ee~~<br>~~pf~~|Drain-Source Breakdown Voltage<br>~~ee~~<br>~~nr~~<br>~~pf~~|VGS=0V, ID=250uA<br>~~ee~~<br>~~Pn~~<br>|30<br>~~ee~~<br>~~Pn~~<br>~~GI~~<br>|-<br>~~ee~~<br>~~Pn~~<br>~~I I~~<br>|-<br>~~ee~~<br>~~Pn~~<br>~~I I~~<br>|V<br>~~ee~~<br>~~Pn~~<br>|
|∆BVDSS/∆Tj<br>~~ee~~<br>~~pf~~|jBreakdown Voltage Temperature Coefficient <br>~~nr~~<br>~~pf~~|Reference to 25°C, ID=1mA -<br>~~Pn~~<br>|=1mA -<br>~~Pn~~<br>~~GI~~<br>|0.04<br>~~Pn~~<br>~~I I~~<br>|-<br>~~Pn~~<br>~~I I~~<br>|V/°C<br>~~Pn~~<br>|
|RDS(ON)<br>~~ee~~<br>~~pf~~|Static Drain-Source On-Resistance2<br>~~nr~~<br>~~pfEE~~|VGS=4V, ID=500mA<br>VGS=2.5V, ID=200mA<br>~~Pn~~<br>~~EE~~|-<br>-<br>~~Pn~~<br>~~GI~~<br>~~EE~~|-<br>-<br>~~Pn~~<br>~~I I~~<br>~~EE~~|1.5<br>2.5<br>~~Pn~~<br>~~I I~~<br>~~EE~~|Ω<br>Ω<br>~~Pn~~<br>~~EE~~|
|VGS(th)<br>~~pf~~|Gate Threshold Voltage<br>~~pfEE~~|VDS=VGS, ID=250uA<br>~~EE~~|0.4<br>~~GI~~<br>~~EE~~|-<br>~~I I~~<br>~~EE~~|1.3<br>~~I I~~<br>~~EE~~|V<br>~~EE~~|
|gfs<br>~~pf~~<br>~~eee~~|Forward Transconductance<br>~~pf~~<br>~~eee~~|VDS=4V, ID=500mA<br><br>~~eee~~|-<br>~~GI ~~<br><br>~~eee~~|725<br> ~~I I~~<br><br>~~eee~~|-<br>~~I I~~<br><br>~~eee~~|mS<br><br>~~eee~~|
|IDSS<br>~~eee~~|Drain-Source Leakage Current<br>~~eee~~|VDS=30V, VGS=0V<br>~~eee~~|-<br>~~eee~~|-<br>~~eee~~|1<br>~~eee~~|uA<br>~~eee~~|
||Drain-Source Leakage Current(Tj=70oC) <br>~~eee~~|VDS=24V ,VGS=0V<br>~~eee~~|-<br>~~eee~~|-<br>~~eee~~|25<br>~~eee~~|uA<br>~~eee~~|
|IGSS|Gate-Source Leakage|VGS=±16V, VDS=0V|-|-|±60|uA|
|Qg|Total Gate Charge2|ID=1A<br>VDS=25V<br>VGS=4.5V|-|1.1|1.8|nC|
|Qgs|Gate-Source Charge||-|0.4|-|nC|
|Qgd|Gate-Drain("Miller")Charge||-|0.4|-|nC|
|td(on)|Turn-on DelayTime2|VDS=15V<br>ID=1A<br>RG=3.3Ω,VGS=5V<br>RD=15Ω|-|17|-|ns|
|tr|Rise Time||-|44|-|ns|
|td(off)|Turn-off DelayTime||-|45|-|ns|
|tf|Fall Time||-|55|-|ns|
|Ciss<br>~~—————~~|Input Capacitance<br>~~—————~~|VGS=0V<br>VDS=25V<br>f=1.0MHz<br>~~—————~~|-<br>~~—————~~|30<br>~~—————~~|48<br>~~—————~~|pF<br>~~—————~~|
|Coss<br>~~—————~~|Output Capacitance<br>~~—————~~||-<br>~~—————~~|12<br>~~—————~~|-<br>~~—————~~|pF<br>~~—————~~|
|Crss<br>~~—————~~|Reverse Transfer Capacitance<br>~~—————~~||-<br>~~—————~~|11<br>~~—————~~|-<br>~~—————~~|pF<br>~~—————~~|
**Source-Drain Diode**
|Symbol<br>~~I~~|Parameter<br>~~I~~|Test Conditions<br>~~I~~|Min.<br>~~I~~|Typ.<br>~~I~~|Max.<br>~~I~~|Units<br>~~I~~|
|---|---|---|---|---|---|---|
|VSD<br>~~I~~|Forward On Voltage2<br>~~I~~|IS=0.5A, VGS=0V<br>~~I~~|-<br>~~I~~|-<br>~~I~~|1.3<br>~~I~~|V<br>~~I~~|
## **Notes:**
1. Pulse width limited by maximum junction temperature.
2. Pulse test - pulse width ~~<~~ 300µs , duty cycle ~~<~~ 2%
3. Surface mounted on 1in2 copper pad of FR4 board, t ~~<1~~ 0sec; 400°C/W when mounted on minimum copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN.
**2/5**
**©2010 Advanced Power Electronics Corp. USA www.a-powerusa.com**
**Advanced Power Electronics Cor . p**
**AP2318GEN-HF-3**
## **Typical Electrical Characteristics**
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2.5<br>5.0V<br>4.5V<br>2.0 T A = 25 [o] C 4.0 V<br>1.5<br>1.0<br>2.5V<br>0.5<br>V G = 1 .5V<br>0.0<br>0.0 2.0 4.0 6.0<br>V DS , Drain-to-Source Voltage (V)<br> , Drain Current (A)<br>ID<br>**----- End of picture text -----**<br>
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2.5<br>T A = 1 5 0 [o] C 5.0V<br>2.0 4.5V<br>4.0 V<br>1.5<br>1.0<br>2.5V<br>0.5<br>V G = 1 .5V<br>0.0<br>0.0 2.0 4.0 6.0<br>V DS , Drain-to-Source Voltage (V)<br> , Drain Current (A)<br>ID<br>**----- End of picture text -----**<br>
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
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3300 2.0<br>I D =200mA I D =500mA<br>T A =25 [o] C V G =4V<br>1.6<br>2300<br>1.2<br>1300<br>0.8<br>300 0.4<br>1 2 3 4 5 -50 0 50 100 150<br>V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( [o] C)<br> Fig 3. On-Resistance vs. Fig 4. Normalized On-Resistance<br>Gate Voltage vs. Junction Temperature<br>1.0 2.0<br>0.8<br>1.5<br>0.6<br>T j =150 [o] C T j =25 [o] C 1.0<br>0.4<br>0.5<br>0.2<br>0.0 0.0<br>0 0.2 0.4 0.6 0.8 1 1.2 -50 0 50 100 150<br>V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( [o] C)<br> Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage vs.<br> Reverse Diode<br>) DS(ON)<br>Ω<br> (m<br>DS(ON)<br>R Normalized R<br> (V)<br>GS(th)<br>(A)IS<br>Normalized V<br>**----- End of picture text -----**<br>
## Fig 3. On-Resistance vs.
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**----- Start of picture text -----**<br>
Fig 6. Gate Threshold Voltage vs.<br> Junction Temperature<br>**----- End of picture text -----**<br>
**3/5**
**©2010 Advanced Power Electronics Corp. USA**
**www.a-powerusa.com**
**Advanced Power Electronics Cor . p**
**AP2318GEN-HF-3**
## **Typical Electrical Characteristics (cont.)**
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12<br>I D =1A<br>9 V DS =15V<br>V DS =20V<br>V DS =25V<br>6<br>3<br>0<br>0.0 0.5 1.0 1.5 2.0 2.5<br>Q G , Total Gate Charge (nC)<br> , Gate to Source Voltage (V)<br>GS<br>V<br>**----- End of picture text -----**<br>
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f=1.0MHz<br>100<br>C iss<br>C oss<br>ee<br>C rss<br>10<br>1 5 9 13 17 21 25 29<br>V DS , Drain-to-Source Voltage (V)<br>C (pF)<br>**----- End of picture text -----**<br>
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
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10 Pea stee soa See gE ote baa sia<br>ede alee ef eee eat ed else] eee eS er<br>Treacy Teeeta ti<br>1<br>NT<br>ore Cena 1ms<br>aay eee nn<br>0.1 aanT PONE \S sf ee 10ms<br>100ms<br>T A =25 a7 [o] C AEN jae 1s<br>Single Pulse<br>DC<br>0.01<br>0.1 “SS 1 10 100<br>V DS , Drain-to-Source Voltage (V)<br>(A)<br>ID<br>**----- End of picture text -----**<br>
Fig 9. Maximum Safe Operating Area
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1 eeean<br>Duty factor=0.5<br>ean flim nal<br>z a HH<br>0.2<br>i aeeea ey<br>0.1<br>0.1 PDM<br>LG 0.05 anne t<br>T<br>Sa Hil Ve i<br>0.02 Duty factor = t/T<br>Peak T j = P DM x R thja + T a<br>0.01 Rthja = 400°C/W<br>WA<br>Single Pulse<br>0.01<br>0.0001 sve 0.001 NNN 0.01 0.1 1 WA 10 100<br>t , Pulse Width (s)<br>)thja<br>Normalized Thermal Response (R<br>**----- End of picture text -----**<br>
Fig 10. Effective Transient Thermal Impedance
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2.0<br>V DS =5V<br>1.5<br>T j =25 [o] C T j =150 [o] C<br>1.0<br>0.5<br>0.0<br>0 2 4 6<br>V GS , Gate-to-Source Voltage (V)<br> , Drain Current (A)<br>ID<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
VG<br>QG<br>4.5V<br>QGS QGD<br>Charge Q<br>**----- End of picture text -----**<br>
Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform
**4/5**
**©2010 Advanced Power Electronics Corp. USA www.a-powerusa.com**
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**----- Start of picture text -----**<br>
Advanced Power<br>Electronics Corp. AP2318GEN-HF-3<br>Oo<br>Package Dimensions: SOT-23<br>D<br>Millimeters<br>D1 SYMBOLS<br>MIN NOM MAX<br>3 A 1.00 1.15 1.30<br>A1 0.00 -- 0.10<br>A2 0.10 0.15 0.25<br>E1<br>E<br>D1 0.30 0.40 0.50<br>e 1.70 2.00 2.30<br>1 2 D 2.70 2.90 3.10<br>E 2.40 2.65 3.00<br>E1 1.40 1.50 1.60<br>__fi e T F a<br>1. All dimensions are in millimeters.<br>A<br>2. Dimensions do not include mold protrusions.<br>A2<br>on<br>A1<br>**----- End of picture text -----**<br>
## **Marking Information: SOT-23**
Product: NM = AP2318GEN-HF-3
Date/lot code
**==> picture [45 x 10] intentionally omitted <==**
**----- Start of picture text -----**<br>
NMXX<br>**----- End of picture text -----**<br>
For details of how to convert this to standard YYWW date code format, please contact us directly.
**5/5**
**©2010 Advanced Power Electronics Corp. USA www.a-powerusa.com**
Updated at February 9, 2023
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