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AP2316GN-HF-3TR
Power MOSFET, N Channel, 30 V, 4.7 A, 0.042 ohm, SOT-23, Surface Mount
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- Manufacturer: ADVANCED POWER ELECTRONICS CORP
- Product type: Single MOSFETs
- No. of Pins: 3Pins
- Channel Type: N Channel
- Power Dissipation: 1.38W
- Transistor Mounting: Surface Mount
- Transistor Polarity: N Channel
- Power Dissipation Pd: 1.38W
- Rds(on) Test Voltage: 10V
- On Resistance Rds(on): 0.042ohm
- Transistor Case Style: SOT-23
- Drain Source Voltage Vds: 30V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 4.7A
- Drain Source On State Resistance: 0.042ohm
- Gate Source Threshold Voltage Max: 1V
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.069 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**Advanced Power Electronics Cor . p**
## **AP2316GN-HF-3**
## **N-channel Enhancement-mode Power MOSFET**
## **Simple Drive Requirement**
## **Low Gate Charge**
**Surface Mount Device RoHS-compliant, halogen-free**
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D<br>BV 30VDSS<br>R 42mΩ<br>DS(ON)<br>G<br>I 4.7AD<br>@ S |<br>**----- End of picture text -----**<br>
## **Description**
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.
The AP2316GN-HF-3 is in the popular SOT-23 small surface-mount package which is widely used in commercial and industrial applications where a small board footprint is required.
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**----- Start of picture text -----**<br>
D<br>S<br>SOT-23 G<br>**----- End of picture text -----**<br>
This device is well suited for use in medium current applications such as load switches.
## **Absolute Maximum Ratings**
|Symbol|Parameter|Rating|Units|
|---|---|---|---|
|VDS|Drain-Source Voltage 30 V|e 30 V|e 30 V|
|VGS|Gate-Source Voltage|~~+~~<br>20 V|20 V|
|D A<br>I<br>at T =25°C 4.7 A|Continuous Drain Current3<br>at T =25°C 4.7 A|at T =25°C 4.7 A|at T =25°C 4.7 A|
|ID<br>A<br>at T = 70°C 3.7 A|Continuous Drain Current3<br>at T = 70°C 3.7 A|at T = 70°C 3.7 A|at T = 70°C 3.7 A|
|IDM|Pulsed Drain Current1|10 A|10 A|
|D at TA=25°C<br>P|Total Power Dissipation 1.38 W|ation 1.38 W|ation 1.38 W|
|TSTG|Storage Temperature Range|-55 to 150 °C|-55 to 150 °C|
|J<br>T|Operating Junction Temperature Range|-55 to 150 °C|-55 to 150 °C|
## **Thermal Data**
|Symbol|Parameter|Value|Unit|
|---|---|---|---|
|Rthj-a|Maximum Thermal Resistance,Junction-ambient|90 °C/W|90 °C/W|
## **Ordering Information**
**AP2316GN-HF-3TR RoHS-compliant halogen-free SOT-23, shipped on tape and reel, 3000pcs/ reel**
**201008182-3 1/5**
**©2010 Advanced Power Electronics Corp. USA**
**www.a-powerusa.com**
**Advanced Power Electronics Cor . p**
**AP2316GN-HF-3**
## **Electrical Specifications at Tj=25°C (unless otherwise specified)**
|**Electrical Specifications**|**Electrical Specifications at Tj=25°Cj=25°C=25°C°CC (unless otherwise specified)**|**(unless otherwise specified)**|||||
|---|---|---|---|---|---|---|
|Symbol|Parameter|Test Conditions|Min.|Typ.|Max. Units|Max. Units|
|BVDSS|Drain-Source Breakdown Voltage|VGS=0V, ID=250uA|30|-|-|V|
|∆BVDSS/∆Tj|jBreakdown Voltage Temperature Coefficient|Reference to 25°C, ID=1mA -|=1mA -|0.02|-|V/°C|
|RDS(ON)|Static Drain-Source On-Resistance|VGS=10V, ID=4A|-|-|42|mΩ|
|||VGS=4.5V, ID=2A|-|-|72|mΩ|
|VGS(th)|Gate Threshold Voltage|VDS=VGS, ID=250uA|1|-|3|V|
|gfs|Forward Transconductance|VDS=10V, ID=4A|-|5|-|S|
|IDSS|Drain-Source Leakage Current|VDS=30V, VGS=0V|-|-|1|uA|
|||VDS=24V,VGS=0V, TJ=70°C -|=70°C -|-|10|uA|
|IGSS|Gate-Source Leakage|VGS=±20V|-|-|±100|nA|
|Qg|Total Gate Charge2|ID=4A<br>VDS=24V<br>VGS=4.5V<br>~~anne~~|-|5|8|nC|
|Qgs|Gate-Source Charge||-|1|-|nC|
|Qgd<br>~~ee~~|Gate-Drain("Miller")Charge<br>~~ee~~||-<br>~~anne~~|3<br>~~anne~~|-<br>~~anne~~|nC<br>~~anne~~|
|td(on)<br>~~ee~~|Turn-on DelayTime2<br>~~ee~~|VDS=15V<br>ID=1A<br>RG=3.3Ω,VGS=10V<br>RD=15Ω<br>~~anne~~|-<br>~~anne~~|7<br>~~anne~~|-<br>~~anne~~|ns<br>~~anne~~|
|tr<br>~~ee~~|Rise Time<br>~~ee~~||-<br>~~anne~~|8<br>~~anne~~|-<br>~~anne~~|ns<br>~~anne~~|
|td(off)<br>~~ee~~|Turn-off DelayTime<br>~~ee~~||-<br>~~anne~~|12<br>~~anne~~|-<br>~~anne~~|ns<br>~~anne~~|
|tf<br>~~ee~~|Fall Time<br>~~ee~~||-<br>~~anne~~|3<br>~~anne~~|-<br>~~anne~~|ns<br>~~anne~~|
|Ciss<br>~~ee~~<br>~~—————~~|Input Capacitance<br>~~ee~~<br>~~—————~~|VGS=0V<br>VDS=25V<br>f=1.0MHz<br>~~anne~~<br>~~—————~~|-<br>~~anne~~<br>~~—————~~|270<br>~~anne~~<br>~~—————~~|430<br>~~anne~~<br>~~—————~~|pF<br>~~anne~~<br>~~—————~~|
|Coss<br>~~ee~~<br>~~—————~~|Output Capacitance<br>~~ee~~<br>~~—————~~||-<br>~~anne~~<br>~~—————~~|70<br>~~anne~~<br>~~—————~~|-<br>~~anne~~<br>~~—————~~|pF<br>~~anne~~<br>~~—————~~|
|Crss<br>~~—————~~|Reverse Transfer Capacitance<br>~~—————~~||-<br>~~—————~~|60<br>~~—————~~|-<br>~~—————~~|pF<br>~~—————~~|
|Rg<br>~~—————~~|Gate Resistance<br>~~—————~~|f=1.0MHz<br>~~—————~~|-<br>~~—————~~|1.4<br>~~—————~~|2.1<br>~~—————~~|Ω<br>~~—————~~|
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN.
**2/5**
**©2010 Advanced Power Electronics Corp. USA www.a-powerusa.com**
**Advanced Power Electronics Cor . p**
**AP2316GN-HF-3**
## **Typical Electrical Characteristics**
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12 12<br> 10V 10 V<br>T A =25 [o] C 7.0V T A = 150 [o] C 7.0 V<br>5.0V 5.0 V<br>4.5V 4.5 V<br>8 es 8 a<br>V G = 3.0 V<br>4 V G = 3.0 V 4<br>P| pe<br>0 yo 0<br>0 1 2 3 4 0 1 2 3 4<br>V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V)<br> Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics<br>65 1.8<br>I D = 2 A I D = 4 A<br>T A =25 [o] C V G =10V<br>55 1.5<br>45 1.2<br>BEL CD mm<br>3525 CoNSET 0.90.6 LEA<br>2 4 6 8 10 -50 0 50 100 150<br>V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( [o] C)<br> Fig 3. On-Resistance vs. Fig 4. Normalized On-Resistance<br>Gate Voltage vs. Junction Temperature<br>4.03.0 To] 1.81.4 =eE<br>T j =150 [o] C T j =25 [o] C<br>2.0 1.0<br>1.0 0.6<br>0.0 ee 0.2 =<br>0 0.2 0.4 0.6 0.8 1 1.2 -50 0 50 100 150<br>V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( [o] C)<br> Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage vs.<br> Reverse Diode Junction Temperature<br> , Drain Current (A) , Drain Current (A)<br>ID ID<br>) DS(ON)<br>Ω<br> (m<br>DS(ON)<br>R Normalized R<br>(V)<br>GS(th)<br>(A)IS<br>Normalized V<br>**----- End of picture text -----**<br>
Fig 1. Typical Output Characteristics
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Fig 3. On-Resistance vs.<br>**----- End of picture text -----**<br>
**3/5**
**©2010 Advanced Power Electronics Corp. USA**
**www.a-powerusa.com**
**Advanced Power Electronics Cor . p**
**AP2316GN-HF-3**
## **Typical Electrical Characteristics (cont.)**
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f=1.0MHz<br>10 1000<br>I D =4A<br>8<br>V DS =15V C iss<br> V DS =20V<br>6 V DS =24V<br>100<br>C oss<br>4<br>C rss<br>2<br>0 10<br>0 2 4 6 8 1 5 9 13 17 21 25 29<br>Q G , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V)<br>C (pF)<br> , Gate to Source Voltage (V)<br>GS<br>V<br>**----- End of picture text -----**<br>
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
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100 1<br>Duty factor=0.5<br>10 0.2<br>cee ai 100us 0.1 Hin 0.1 eee<br>0.05<br>1 i} i} ‘ i} Id 1ms i} WY PDM<br>NSS 10ms 0.01 >t t T<br>0.01 Single Pulse Duty factor = t/T<br>0.1 renner { { ae{ { NUe SeinXN { RATT 100ms fod { i ii iemneall RPeak Tthja = 270 j = P°C/W DM x R thja + T a 4<br>T A =25 [o] C 1s<br>Single Pulse DC<br>0.01 0.001<br>0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 100 1000<br>V DS , Drain-to-Source Voltage (V) t , Pulse Width (s)<br> Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance<br>12<br>V DS =5V DS =5V =5V VG<br>9 QG<br>T j =25 j =25 =25 [[o]] C T j =150 j =150 =150 [[o]] C 4.5V<br>6 QGS QGD<br>3<br>Charge Q<br>)thja<br>(A)<br>ID<br>Normalized Thermal Response (R<br> , Drain Current (A)<br>IDD<br>**----- End of picture text -----**<br>
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
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12<br>V DS =5V DS =5V =5V<br>9<br>T j =25 j =25 =25 [[o]] C T j =150 j =150 =150 [[o]] C<br>6<br>3<br>0<br>0 2 4 6<br>V GS , Gate-to-Source Voltage (V)<br> , Drain Current (A)<br>IDD<br>**----- End of picture text -----**<br>
Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform
**4/5**
**©2010 Advanced Power Electronics Corp. USA www.a-powerusa.com**
**Advanced Power Electronics Cor . p**
**AP2316GN-HF-3**
## **Package Dimensions: SOT-23**
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D<br>D1<br>o><br>| E1<br>E<br>LP e<br>—<br>A A2 M<br>A1 M<br>L<br>**----- End of picture text -----**<br>
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Millimeters<br>SYMBOLS<br>MIN NOM MAX<br>CE A 0.88 -- 1.30<br>ee A1 0.00 ee ee -- 0.10<br>A2 0.08 -- 0.25<br>a ee ee<br>D1 0.30 0.40 0.50<br>e 1.70 2.00 2.30<br>—-ee D 2.70 2.90 3.10<br>E 2.20 2.60 3.00<br>Fo E1 1.20 1.50 1.80<br>M 0° -- 10°<br>FE L 0.30 -- 0.60<br>**----- End of picture text -----**<br>
1. All dimensions are in millimeters.
2. Dimensions do not include mold protrusions.
## **Marking Information: SOT-23**
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NIXX<br>i<br>**----- End of picture text -----**<br>
Product: NI = AP2316GN-HF-3
## Date/lot code
For details of how to convert this to standard YYWW date code format, please contact us directly.
**5/5**
**©2010 Advanced Power Electronics Corp. USA www.a-powerusa.com**
Updated at February 9, 2023
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